Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
  • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
  • H05K1/0203—Cooling of mounted components
  • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
  • H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/0213—Electrical arrangements not otherwise provided for
  • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
  • H05K1/0257—Overvoltage protection
  • H05K1/0259—Electrostatic discharge [ESD] protection
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/18—Printed circuits structurally associated with non-printed electric components
  • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/18—Printed circuits structurally associated with non-printed electric components
  • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
  • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
  • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
  • H05K2201/10007—Types of components
  • H05K2201/10106—Light emitting diode [LED]
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
  • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
  • H05K2201/10007—Types of components
  • H05K2201/10151—Sensor
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
  • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
  • H05K2201/10007—Types of components
  • H05K2201/10174—Diode
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the present invention relates to a multi-LED system, which is designed, for example, to generate a flashlight.
• Such multi-LED systems are needed in particular for mobile applications such as smart phones or digital cameras.
• multi-LED systems comprising a hybrid construction of a substrate and a passive assembly
• LEDs Light emitting diodes
• the publication DE 10 2014 101 092 AI shows a chip with varistor function, on which an LED can be mounted. It is an object of the present invention to provide a multi-LED system with improved properties.
• the multi-LED system according to the invention has a carrier on which a plurality of light-emitting diodes are arranged.
• the carrier has a base body in which a plurality of electrical
• Flash module designed in mobile applications.
• the multi-LED system has exactly four
• it can be a quadruple LED flash module.
• the LEDs are arranged, for example, at the vertices of a rectangle, for example a square.
• the module size can be significantly reduced or more LEDs in the same module size can be integrated, whereby the flash output can be significantly increased.
• the integration of the components also prevents that in the lateral emission by reflection on the
• the embedded electrical components are, for example, one or more sensors and / or protective components.
• the components may comprise a ceramic material.
• at least one ESD protection component for protection against electrostatic discharges (ESD) is present. It may be a varistor, in particular a multilayer varistor, or a TVS diode. Alternatively or additionally, a
• the main body has, for example, a resin material and / or a polymer material.
• Polymer material may have fillers.
• the fillers for example, the hardness, the
• Conductivity of the body can be influenced.
• the parent body is one
• the resin or polymer material may comprise, for example, ceramic fillers.
• the main body can be multi-layered. All
• Layers of the main body can be the resin or
• the components can be found in the
• the components may be embedded in the middle layer.
• the components may be arranged only in the middle layer and be covered by the upper and lower layers.
• the carrier may have a plurality of upper and lower metallizations, respectively, on the top and the bottom of the
• first upper metallizations for contacting the LEDs can be applied to the upper side of the main body.
• the LEDs are disposed on the first upper metallizations and fixed to the first upper metallizations by soldering.
• each LED is connected to two first upper metallizations, wherein one of the metallizations is designed for contacting two LEDs.
• two LEDs each share a first upper metallization.
• One or more embedded devices may also be connected to the first top metallizations.
• the embedded components are for example by means of
• Connected metallizations are one or more ESD protection components.
• Metallizations in particular no component is arranged.
• the embedded components are connected, for example, by means of plated-through holes with the metallizations.
• the second upper metallizations are for example as
• the second upper metallizations are arranged, for example, between first upper metallizations.
• the multi-LED system includes a temperature sensor that is connected to the second upper
• Temperature sensor is arranged for example in the supervision in a central region of the multi-LED system. Furthermore, lower metallizations for the electrical connection of the multi-LED system, in particular the LEDs and / or the embedded components may be arranged on the underside of the base body.
• each LED is connected to two first lower metallizations, one of which
• Metalizations for contacting all LEDs can be formed.
• the first lower metallizations are, for example, via first vias with the first upper ones
• thermal vias which is characterized by a high thermal conductivity.
• the first via contacts extend, for example, without interruption from the first upper metallization to the first lower metallization.
• the second lower metallizations are arranged only in lateral edge regions on the underside of the carrier.
• a first lower metallization is arranged between the second lower metallizations.
• the second lower metallizations are connected, for example, to the second upper metallizations by fourth through-contacts.
• the fourth vias lead from the second upper metallizations to the second lower metallizations.
• the fourth vias may be uninterrupted from the second upper metallizations to the second lower ones
• the second lower metallizations are designed for the electrical connection of a temperature sensor.
• the embedded device may be connected to two upper metallizations by a via, respectively, and the two upper metallizations may be connected to two lower ones
• Metallizations be connected by one via each.
• the embedded component is in particular only above the upper metallizations with lower
• one or more metallic structures for reducing the thermal resistance are embedded in the main body.
• it is about Metal blocks or metal strips.
• the metallic structures have, for example, copper.
• the vias may be interrupted by the metallic structures or pass through the metallic structures.
• an LED system is provided. Unlike the above
• the LED system can have even a single LED. There may also be only a single embedded component. Alternatively, the LED system has a plurality of light-emitting diodes and / or a plurality of embedded components. All the features described above in relation to the multi-LED system
• the carrier may have at least one upper
• Metallization for connecting the embedded device, wherein the embedded device is connected to the upper metallization through a via and wherein the upper metallization with the lower
• the embedded device may be connected to two upper metallizations by two vias and the two upper metallizations by two
• Vias be connected to two lower metallizations.
• a support for a multi-LED system is provided.
• the carrier may be formed as described above.
• the carrier has a base body in which a plurality of electrical
• the carrier is designed to arrange a plurality of LEDs.
• a plurality of ESD protection components and at least one temperature sensor are embedded in the base body.
• the main body has, for example, a resin or polymer material.
• FIG. 1A shows an embodiment of a multi-LED system in a plan view
• FIG. 1B shows the embodiment of the multi-LED system from FIG. 1B
• FIG. 1D shows the embodiment of the multi-LED system from FIG. 1A in horizontal section in a perspective view
• Figure 2A shows another embodiment of a multi-LED
• FIG. 2B shows the embodiment of the multi-LED system from FIG.
• FIG. 1A shows a multi-LED system 1 in a plan view.
• FIG. 1B shows the multi-LED system 1 in a perspective view.
• the multi-LED system 1 has a carrier 2, on which a plurality of light-emitting diodes 3, 3 ', 3' 'are arranged.
• the lower right quarter of the system 1 is not shown. This quarter is formed, for example, axis mirrored to the lower left quarter.
• the light-emitting diodes 3, 3 ', 3' ' are indicated by dashed lines
• the light emitting diodes 3, 3 ', 3 " may be covered by optical structures, for example lenses and / or light conversion layers, and / or protective structures.
• the multi-LED system 1 has, for example, exactly four LEDs.
• the multi-LED system 1 is used, for example, to generate a flash.
• the LED system 1, apart from the LEDs 3, 3 ', 3 ", has no further discrete components on the carrier 2. This allows a particularly good miniaturization of the LED system 1.
• the light output and the homogeneity of the emitted light can be improved.
• the carrier 2 has a main body 4 (FIG. 1B), which in the present case is made transparent for reasons of representability.
• the main body 4 may be multi-layered, z. B. be constructed in three layers.
• the main body 4 has
• a resin material in particular a glass fiber resin material.
• the resin material may include ceramic fillers
• the main body 4 may also comprise a polymer material, in particular a filled polymer material.
• the base body 4 may comprise at least one material from a group consisting of resin, in particular bismaleimide-triazine resin, polymers, glass, in particular
• the main body 4 in addition to a base material, such. As resin or a polymer, further fillers.
• FR4 denotes a class of composites consisting of epoxy resin and glass fiber fabric. Resin-glass fiber laminates are characterized by a high dielectric strength and a high mechanical strength.
• the material of the base body 4 may be selected such that soldering processes are enabled at higher temperatures. For example, the LEDs 3, 3 ', 3''are soldered to the carrier 2.
• the material of the base body 4 is particularly suitable for soldering processes at 320 ° C, for example, occur during reflow soldering with a gold-tin solder paste.
• the gold-tin solder paste has 80% gold and 20% tin.
• a SnAgCu solder paste can be used which is soldered at temperatures around 260 ° C.
• the lower metallizations 7, 7 x are as
• FIGS. 1A and 1B the local thermal resistance in K / W determined by thermal simulation is plotted in a range from 1 K / W to 12 K / W. It turns out that the thermal resistance in the vicinity of a gap 9 between the first upper metallizations 5, 5 'is greatest.
• Figure IC shows the multi-LED system 1 of Figures 1A and 1B in a horizontal section in a plan view.
• Figure 1D shows the multi-LED system 1 in horizontal section in a perspective view.
• a plurality of electrical components 11, 11 ', 11' ', 12 are embedded in the main body 4, in particular in a middle layer of the base body 4, a plurality of electrical components 11, 11 ', 11' ', 12 are embedded.
• the components 11, 11 ', 11' ', 12 are completely embedded in the carrier 2.
• the components 11, 11 ', 11 ", 12 are completely embedded in the middle layer of the main body 4 and arranged between the upper and lower layers of the main body 4.
• the electrical components 11, 11 ', 11' ', 12 are
• the height can be, for example, less than or equal to 0.33 mm.
• a plurality of ESD protection components 11, 11 ', 11 "and a temperature sensor 12 are embedded in the carrier 2.
• the ESD protection components 11, 11 ', 11 "have, for example, a ceramic.
• the ceramics are
• varistor ceramic for example
• the temperature sensor 12 is designed as an NTC component.
• the temperature sensor 12 comprises a ceramic.
• the temperature sensor 12 is arranged in the top view in the center of the multi-LED system 1.
• the LEDs 3, 3 ', 3'' are arranged on the first upper Metalli ⁇ sticianen 5, 5' and electrically with these
• the first upper metallizations 5, 5 ' are connected to the first lower metallizations 7, 7' by first plated-through holes 13, 13 '. In this case, four first plated-through holes 13, 13 'are present for each LED 3, 3', 3 ".
• the first vias 13, 13 ' extend without interruption from the first upper metallizations 5, 5' to the first lower metallizations 7, 7 '.
• two of the LEDs 3, 3 ', 3' ' share a first upper metallization 5'.
• the first plated-through holes 13, 13 ' have, for example, diameters between 100 and 200 ⁇ m, preferably between 130 and 170 ⁇ m. In particular, the diameters can be at 150 ym.
• the first plated-through holes 13, 13 ' are formed for example as thermal vias, which reduce the thermal resistance of the carrier 2.
• Through holes 13, 13 ' have, for example, copper.
• the plated-through holes 13, 13 ' are in particular completely filled thermal copper vias.
• the varistors 11, 11 ', 11'' are connected to the first upper and second through-contacts 14, 14' (FIG first lower metallizations 5, 5 '7, 7' connected.
• the temperature sensor 12 is connected to the second upper metallizations 6, 6 'by third plated-through holes 15, 15'.
• the third vias 15, 15 ' are connected to the second upper metallizations 6, 6 'by third plated-through holes 15, 15'.
• the second upper metallizations 6, 6 ' are through fourth plated-through holes 16, 16' with the second lower
• the fourth plated-through holes 16, 16 ' are arranged in the plan view in an edge region of the carrier 2.
• the second upper metallizations 6, 6 ' run as a gap interrupted by a strip of the strip
• the second lower metallizations 8, 8 ' are each arranged only in an edge region of the carrier 2. Between the second lower metallizations 8, 8 ', a first lower metallization 7' is arranged.
• the second, third and fourth vias 14, 14 '15, 15' 16, 16 ' may have a smaller one Diameter than the first vias 13, 13 ', for example, diameter between 40 and 100 ym, in particular between 40 and 70 ym.
• the LED system 1 has, for example, dimensions of 2.6 ⁇ 2, 6 mm 2 .
• the thickness of the LED system 1 without LEDs is for example 300 ym.
• the varistors 11, 11 ', 11''and the temperature sensor 12 each have, for example, a thickness of 100 .mu.m.
• FIGS. 1A and 2B show a further embodiment of a multi-LED system 1 in perspective view and in horizontal section in a perspective view.
• metallic structures 17, 17 ', 17 are embedded in the carrier 2 for reducing the thermal resistance.
• the metallic structures 17, 17 '17' ' are in the form of
• the metallic structures 17, 17 ', 17 " are, for example, embedded in a middle layer of the main body 4.
• the metallic structures 17, 17 '17 do not extend through the upper and lower layers of the
• the metallic structures 17, 17 ', 17'' are connected to the first upper and first lower metallizations 5, 5', 7 'by first plated-through holes 18, 18'.
• the plated-through holes 18, 18 ' may pass through the metallic structures 17, 17', 17 '' or be interrupted by the metallic structures 17, 17 ', 17''.
• the plated-through holes 18, 18 ' can with the metallic structures 17, 17 '17''also in one piece
• the first vias 18, 18 ' are formed corresponding to the first vias 13, 13' of the embodiment of FIGS. 1A to 1D. In contrast, however, only two plated-through holes 18, 18 'lead away from the first upper metallizations 5, 5' for each LED 3, 3 ', 3 ". Each via 18, 18 'is with a
• the LED system may have only a single LED.
• the contacting of the LED and the contacting of one or more embedded components according to the embodiments of FIGS. 1A to 2B may be formed.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Led Device Packages (AREA)
• Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Applications Claiming Priority (2)

Publications (1)

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Cited By (2)

Families Citing this family (7)

Family Cites Families (25)

• 2016
  • 2016-05-06 DE DE102016108427.1A patent/DE102016108427A1/de active Pending
• 2017
  • 2017-03-30 WO PCT/EP2017/057600 patent/WO2017190895A1/de unknown
  • 2017-03-30 CN CN201780028109.8A patent/CN109479370B/zh active Active
  • 2017-03-30 JP JP2018558159A patent/JP6874022B2/ja active Active
  • 2017-03-30 EP EP17718834.9A patent/EP3453234A1/de active Pending
  • 2017-03-30 US US16/099,126 patent/US10714458B2/en active Active
  • 2017-04-13 TW TW106112352A patent/TWI726087B/zh active

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