Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
  • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B44/00—Circuit arrangements for operating electroluminescent light sources
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
  • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
  • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
  • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
  • F21S41/141—Light emitting diodes [LED]
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
  • F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
  • F21S43/10—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source
  • F21S43/13—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source characterised by the type of light source
  • F21S43/14—Light emitting diodes [LED]
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
  • F21S45/00—Arrangements within vehicle lighting devices specially adapted for vehicle exteriors, for purposes other than emission or distribution of light
  • F21S45/10—Protection of lighting devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/005—Processes
  • H01L33/0093—Wafer bonding; Removal of the growth substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/26—Materials of the light emitting region
  • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
  • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
  • H05B47/10—Controlling the light source
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
  • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
  • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Definitions

• the invention relates to the field of lighting and light signaling, in particular for a motor vehicle.
• LEDs In the field of lighting and light signaling for motor vehicles, it is becoming more and more common to use light sources with electroluminescent semiconductor components, for example light-emitting diodes, LEDs.
• An LED component emits light rays when a voltage of a value at least equal to a threshold value called forward voltage is applied to these terminals.
• one or more LEDs of a light module for a motor vehicle are powered through power control means, which include converter circuits.
• the power control means are configured to convert an electric current of a first intensity, for example provided by a current source of the motor vehicle, such as a battery, into a charging current having a second intensity, different from the first.
• the control means are made by surface-mounted components SMD ("surface mounted device") on a printed circuit board, PCB ("printed circuit board”) dedicated and remote with respect to the location of the PCB which includes the LEDs.
• SMD surface mounted device
• PCB printed circuit board
• the electrical connection of the control means to the LEDs is achieved by appropriate wiring.
• the known configurations therefore imply a plurality of printed circuits which generate a space and weight difficult to manage when designing light modules for motor vehicles. Indeed, the space available to house the various electronic components of such a module is limited, and weight reduction is currently considered as a global goal in the field of automotive design.
• the object of the invention is to propose a solution that overcomes the aforementioned problem. More particularly, the object of the invention is to propose a LED light source which incorporates an electronic circuit implementing a function necessary for controlling the light source.
• the subject of the invention is a semiconductor light source comprising a first silicon substrate and at least one light-emitting diode disposed on the substrate.
• the light source is remarkable in that the source comprises an electronic circuit for performing a function necessary for driving the diode or diodes.
• the electronic circuit can be implanted on the first substrate of the source.
• the source may preferably comprise a second silicon substrate, attached to the first substrate, the electronic circuit being implanted on the second substrate.
• the source may include a plurality of second silicon substrates attached to the first substrate.
• the second substrate may be attached to the first substrate on the face opposite to the face on which the diode or diodes are disposed.
• the substrates may preferably be attached to one another by welding, in particular by gold-tin welding.
• the two substrates may preferably comprise vias for the electrical interconnection of the two substrates.
• the source may comprise a plurality of light emitting diodes.
• the light-emitting diodes may preferably be in the form of electroluminescent rods of submillimetric dimensions projecting from the substrate.
• the rods can be arranged in a matrix.
• the matrix can preferably be regular, so that there is a constant spacing between two successive rods of a given alignment, or so that the rods are staggered.
• the height of a stick may preferably be between 1 and 10 micrometers.
• the largest dimension of the end face may preferably be less than 2 micrometers.
• the minimum distance between two immediately adjacent rods may be 10 microns.
• the area of the illuminating surface of the light source may preferably be at most 8 mm 2 .
• the luminance obtained by the plurality of electroluminescent rods may for example be at least 60Cd / mm 2 .
• the light-emitting diodes may be in the form of a thin layer.
• the diodes can be divided into several groups, the diodes of each group being able to emit a specific light.
• the groups may have different shapes, sizes, and / or diodes from each other.
• Each group may preferably be powered independently of the other groups.
• Each of the groups may preferably be able to emit light of specific intensity and / or color.
• the first substrate may comprise connection pads for electrically connecting it to a current source by bridging.
• the electronic circuit may preferably be to perform at least one of the following functions:
• circuit for switching between at least two light functions circuit for selecting a specific electrical connection of several groups of light-emitting diodes;
• the circuit may in particular preferably switch between a series connection and a parallel connection of several groups of diodes of the light source.
• the electronic circuit may preferably be integrated directly into the source substrate, for example by etching.
• the subject of the invention is also a light module comprising:
• At least one light source capable of emitting light rays
• an optical device adapted to receive the light rays and to produce a light beam
• the module is remarkable in that the light source or sources are in accordance with the invention.
• the measurements of the invention are interesting in that they make it possible to obtain an electronic component which groups together a first main function of a light source, that is to say the emission of light rays, with at least one second function for the electrical control of the light source.
• a first main function of a light source that is to say the emission of light rays
• at least one second function for the electrical control of the light source Compared to known components, the volume gain is obvious since the invention makes it possible to dispense with printed circuits dedicated to driving a source. light.
• the invention involves a weight reduction of the source assembly / control means.
• FIG. 1 is a representation of a light source as it occurs in a preferred embodiment of the present invention
• FIG. 2 is a schematic representation of a side section of a light source according to a preferred embodiment of the invention.
• FIG. 3 is a schematic representation of a side section of a light source according to a preferred embodiment of the invention.
• FIG. 1 illustrates an electroluminescent light source 001 according to a first embodiment of the invention.
• Figure 1 illustrates the basic principle of the light source.
• the light source 001 comprises a silicon substrate 010 on which are arranged a series of electroluminescence diodes or rods in the form of wires 020 projecting from the substrate.
• the core 022 of each rod 020 is made of n-type semiconductor material, that is to say doped with electrons
• the envelope 024 is made of a p-type semiconductor material, that is to say doped. in holes.
• a recombination zone 026 is provided between n-type and p-type semiconductor materials. However, it is possible to invert the semiconductor materials depending in particular on the chosen technology.
• the substrate is preferably silicon and the rods have a diameter of less than one micron.
• the substrate comprises a layer of semiconductor material doped with holes and the wires have a diameter of between 100 and 500 nm.
• the semiconductor material doped with electrons and holes forming the diodes may advantageously be gallium nitride (GaN) or gallium-indium nitride (InGaN).
• the height of a stick is typically between 1 and 10 micrometers, while the largest dimension of the end face is less than 2 micrometers.
• the rods are arranged in a matrix in a regular arrangement. The distance between two rods is constant and equal to at least 10 micrometers.
• the sticks can be arranged in staggered rows.
• the substrate 010 comprises a main layer 030, advantageously made of silicon, a first electrode or cathode 040 disposed on the face of the main layer which is opposite to the rods 020, and a second electrode or anode 050 disposed on the face comprising the rods 020.
• the anode 050 is in contact with the p-type semiconductor material forming the envelopes 024 of the rods 020 and extending on the corresponding face of the substrate 010 so as to form a conductive layer between said 024 envelopes and 050 anode.
• the cores or cores 022 of the rods are in turn in contact with the semiconducting main layer 030 and thus in electrical contact with the cathode 040.
• the light source 001 comprises several groups of electroluminescent rods connected to different anodes.
• Each group can be powered electrically independently of the other (s).
• the rods of each group are advantageously all of the same type, that is to say, emitting in the same spectrum and emit at a common intensity.
• the groups are advantageously identical and represent a common forward voltage.
• each group therefore comprises substantially the same number of electroluminescent rods.
• each group can represent a different geometry and the groups can have different sizes.
• an electronic circuit for performing a function necessary for controlling the rods is integrated with such a light source.
• a light-emitting diode light source on a silicon substrate is described in EP 2223348 A1.
• the active layer for example made of Galium nitride, GaN, is deposited on a Sapphire substrate, and the active layer is then transferred onto a silicon substrate or wafer, the assembly being made for example by a gold-type weld. tin.
• the resulting diodes are generally referred to as light-emitting diodes in thin film ("thin film").
• a light source may comprise several groups of light emitting diodes of this type, each group being able to be powered independently of the other groups.
• the diodes of each group are advantageously all of the same type, that is to say, emitting in the same spectrum and emit at a common intensity.
• an electronic circuit for performing a function necessary for driving the diodes is integrated in such a light source.
• FIG. 2 shows an electroluminescent light source 101 comprising a silicon substrate 1 and at least one thin-film light emitting diode 120 disposed on the substrate.
• the light-emitting diodes may be in the form of micro- or nanowires as described with reference to FIG.
• the source further comprises an electronic circuit 130 for performing a function necessary for controlling the diode (s) 120.
• the substrate 1 10 is made of silicon, which makes it possible to integrate the circuit 130 directly into the substrate 1 10, for example by engraving. Direct implantation of an electronic circuit 130 makes it possible to dispense with external interconnection means between the circuit 130 and the diode 120.
• connection pads 150 are connected to circuit 130, which is connected to diode 120.
• the connection to a power source of the motor vehicle is carried out by bridging 152 via a wire (“wire bonding"), or via a ribbon bonding.
• the configuration according to the invention makes it possible to group a plurality of functions on the substrate 1 10.
• the electronic circuit 130 can perform one of the following functions, the implementation of which is within the abilities of those skilled in the art:
• control of the power supply of the light-emitting diodes 120 circuit for switching between at least two light functions
• the circuit for selecting a specific electrical connection of several groups of light-emitting diodes.
• the circuit can in particular switch between a series connection and a parallel connection of several groups of diodes of the light source,
• the embodiment of FIG. 3 comprises a light emitting light source 201 comprising a first silicon substrate 210 and electroluminescent rods of sub-millimetric dimensions 220 protruding from the substrate.
• a light emitting light source 201 comprising a first silicon substrate 210 and electroluminescent rods of sub-millimetric dimensions 220 protruding from the substrate.
• light-emitting diodes in a thin layer may be disposed on the substrate.
• the light source further comprises a second silicon substrate 240 which houses an electronic circuit 230 for performing a function necessary for controlling the diode (s) 220.
• the second substrate 240 is attached to the first substrate 210.
• the two substrates are attached to each other using, for example, a gold-tin solder.
• the second substrate 240 is attached to the first substrate 210 on the face thereof which is opposed to the face on which the diodes 220 are disposed.
• the component resulting from this assembly is of the "multi chip package" type, the second substrate integrating an additional function, that is to say a function related to the control of the light source, with respect to the primary function of the source, which is emission of light rays.
• connection pads 250 (“bonding pad") are connected to the circuit 230, which is connected to the diode 120.
• the connection to a current source of the motor vehicle is performed by bypass 252 ("wire bonding").
• the electrical connection between the substrates 210 and 230 is made for example by vias 242.
• the TVS (Through Silicone Vias) technology makes it possible, for example, to make holes by laser drilling of the substrates. The resulting holes are metallized, typically by electrochemical deposition of copper.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Optics & Photonics (AREA)
• Led Device Packages (AREA)
• Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
• Non-Portable Lighting Devices Or Systems Thereof (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=55025168

Family Applications (1)

Country Status (7)

Families Citing this family (1)

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• 2015
  • 2015-09-14 FR FR1558543A patent/FR3041148A1/fr active Pending
• 2016
  • 2016-09-13 EP EP16763862.6A patent/EP3350834A1/fr not_active Ceased
  • 2016-09-13 JP JP2018513422A patent/JP2018530152A/ja active Pending
  • 2016-09-13 CN CN201680053364.3A patent/CN108028250B/zh active Active
  • 2016-09-13 US US15/759,434 patent/US10290617B2/en active Active
  • 2016-09-13 WO PCT/EP2016/071598 patent/WO2017046107A1/fr active Application Filing
  • 2016-09-13 KR KR1020187007358A patent/KR20180054610A/ko not_active Application Discontinuation

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