EP3350845A1 - Source lumineuse led a micro- ou nano-fils comprenant des moyens de mesure de la temperature - Google Patents
Source lumineuse led a micro- ou nano-fils comprenant des moyens de mesure de la temperatureInfo
- Publication number
- EP3350845A1 EP3350845A1 EP16763837.8A EP16763837A EP3350845A1 EP 3350845 A1 EP3350845 A1 EP 3350845A1 EP 16763837 A EP16763837 A EP 16763837A EP 3350845 A1 EP3350845 A1 EP 3350845A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- light source
- substrate
- temperature
- rods
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000009529 body temperature measurement Methods 0.000 title description 3
- 239000002070 nanowire Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
Definitions
- the invention relates to the field of lighting and light signaling, in particular for a motor vehicle.
- LEDs In the field of lighting and light signaling for motor vehicles, it is becoming more and more common to use light sources with electroluminescent semiconductor components, for example light-emitting diodes, LEDs.
- An LED component emits light rays when a voltage of a value at least equal to a threshold value called forward voltage is applied to these terminals.
- one or more LEDs of a light module for a motor vehicle are powered through power control means, which include converter circuits.
- the power control means are configured to convert an electric current of a first intensity, for example provided by a current source of the motor vehicle, such as a battery, into a charging current having a second intensity, different from the first.
- an LED depends on the temperature of its pn junction. Beyond a threshold temperature, there is a risk of permanent damage to the LED component.
- the color of the light emitted by an LED and its intensity also depend on the junction temperature. In general, the junction temperature depends on the intensity of the electric current flowing through it and on the ambient temperature of the light module. In order to be able to manage the desired light emission, and to be able to guarantee the longevity of LED components, it is known to use temperature measuring means that give an indication of the temperature of one or more LEDs. This information is then used by a power control circuit of the LED.
- PCB printed circuit board
- SMD surface mounted device
- thermistors whose resistance depends of their temperature.
- the measured temperature is an approximation of the junction temperature of the LED in question.
- the actual temperature of the junction is not measurable by this method.
- thermistors even if a plurality of LEDs is present on a PCB, for lack of space. Obviously the quality of the temperature approximation of the individual LEDs suffers.
- the object of the invention is to propose a solution that overcomes the aforementioned problem. More particularly, the object of the invention is to propose a micro or nano-son LED light source having integrated temperature measurement means.
- the subject of the invention is an electroluminescent light source comprising a first substrate and a plurality of submillimetric electroluminescent rods projecting from the substrate.
- the light source is remarkable in that it comprises means for measuring the temperature of the electroluminescent rods.
- the rods can be arranged in a matrix.
- the matrix may preferably be regular, so that there is a constant spacing between two successive rods of a given alignment, or so that the rods are arranged in staggered rows.
- the height of a stick may preferably be between 1 and 10 micrometers.
- the largest dimension of the end face may preferably be less than 2 micrometers.
- the minimum distance between two immediately adjacent rods may be 10 microns.
- the area of the illuminating surface of the light source may preferably be at most 8 mm 2 .
- the luminance obtained by the plurality of electroluminescent rods may for example be at least 60Cd / mm 2 .
- the means for measuring the temperature may preferably be means for directly measuring the temperature of the electroluminescent rods.
- the first substrate may comprise silicon.
- the first substrate is silicon.
- the temperature measuring means can preferably be arranged on a second substrate, the second substrate being attached to the first substrate on the face opposite the face of which the rods project.
- the first and second substrates, the electroluminescent rods and the measuring means may be encapsulated in the same housing, in particular so as to form a single component.
- the second substrate comprises silicon.
- the second substrate is made of silicon.
- the two substrates can preferably be attached using an or-tin weld.
- the temperature measuring means can be integrated with the first substrate.
- the means for measuring the temperature may preferably be arranged among the rods.
- the electroluminescent rods may preferentially be divided into several groups, the rods of each group being able to emit a specific light, and in that the source comprises means for measuring temperature for each of the groups.
- the light source may comprise control means able to drive each group independently of the other groups and according to the temperature measurement of this group.
- each of the groups may be able to emit light of a specific intensity.
- Each of the groups may be able to emit light of a specific color.
- the means for measuring the temperature may preferably comprise a bipolar diode.
- the temperature measuring means may comprise an electronic circuit which bases its operation on the measurement of a variation of the direct voltage of a bipolar diode under the influence of a specific electric current, comprising a transistor arrangement. and / or a current generator.
- this electronic circuit can be implanted directly in the substrate of the light source.
- the circuit may preferably be fed with the source in common, so no additional connection to a dedicated power source is required.
- the temperature measuring means may comprise a group of electroluminescent rods of the source.
- Said group among the rods may preferably be fed periodically by said specific current for a duration less than the period and during the rest of the period by a current determined for the group to participate in a lighting function.
- the means for measuring the temperature may preferably comprise an electronic measuring circuit.
- the measuring circuit may advantageously be integrated with the first substrate of the source.
- the invention also relates to a light module comprising at least one light source capable of emitting light rays, and an optical device adapted to receive the light rays and to produce a light beam.
- the module is remarkable in that the light source or sources are in accordance with the invention.
- the measurements of the invention are interesting in that they make it possible to obtain a measurement representative of the temperature of a light source with electroluminescent nano- or micro-wires, also described as electroluminescent rods. Since the temperature means are directly implanted on or attached to the substrate of the light source, the measured temperature gives a good indication of the effective temperature of the semiconductor junctions of the rods. According to a preferred embodiment, a plurality of temperature measuring means can be implanted at specific positions on the substrate of the light source, which allows a robust management of the source and / or different groups of rods of the source.
- FIG. 1 is a representation of a light source as it occurs in a preferred embodiment of the present invention
- FIG. 2 is a schematic representation of a view from above of a light source according to a preferred embodiment of the invention
- FIG. 3 is a schematic representation of a view from above of a light source according to a preferred embodiment of the invention.
- FIG. 4 is a schematic representation of a side section of a light source according to a preferred embodiment of the invention
- FIG. 5 is a schematic representation of a side section of a light source according to a preferred embodiment of the invention.
- FIG. 1 illustrates an electroluminescent light source 001 according to a first embodiment of the invention.
- Figure 1 illustrates the basic principle of the light source.
- the light source 001 comprises a substrate 010 on which are disposed a series of electroluminescence diodes in the form of wires or rods 020 protruding from the substrate.
- the core 022 of each rod 020 is made of n-type semiconductor material, that is to say doped with electrons
- the envelope 024 is made of a p-type semiconductor material, that is to say doped. in holes.
- a recombination zone 026 is provided between n-type and p-type semiconductor materials. However, it is possible to invert the semiconductor materials depending in particular on the chosen technology.
- the substrate is preferably silicon and the rods have a diameter of less than one micron.
- the substrate comprises a layer of semiconductor material doped with holes and the wires have a diameter of between 100 and 500 nm.
- the semiconductor material doped with electrons and holes forming the diodes may advantageously be gallium nitride (GaN) or gallium-indium nitride (InGaN).
- the height of a stick is typically between 1 and 10 micrometers, while the largest dimension of the end face is less than 2 micrometers.
- the rods are arranged in a matrix in a regular arrangement. The distance between two rods is constant and equal to at least 10 micrometers.
- the sticks can be arranged in staggered rows.
- the substrate 010 comprises a main layer 030, advantageously made of silicon, a first electrode or cathode 040 disposed on the face of the layer which is opposed to the rods 020, and a second electrode or anode 050 disposed on the face comprising the diodes 020.
- the anode 050 is in contact with the p-type semiconductor material forming the envelopes 024 of the diodes 020 and s' extending on the corresponding face of the substrate 010 so as to form a conductive layer between said envelopes 024 and the anode 050.
- the cores or cores 022 of the rods are in turn in contact with the semiconductor main layer 030 and thus in contact Electric with cathode 040.
- the light source 001 comprises several groups of electroluminescent rods connected to different anodes. Each group can thus be powered electrically independently of the other or others.
- the diodes or rods of each group are advantageously all of the same type, that is to say, emitting in the same spectrum and emit at a common intensity.
- the groups are advantageously identical and represent a common forward voltage. Preferably, each group therefore comprises substantially the same number of semiconductor wires.
- means for measuring the temperature are integrated in the source 001.
- FIG. 2 shows a light source 101 at electroluminescence comprising a substrate 1 10 and a plurality of wire-shaped electroluminescent rods 120 projecting from the substrate.
- the source further comprises means for measuring the temperature of the rods 130.
- the substrate 1 10 is advantageously made of silicon, which makes it possible to integrate the means for measuring the temperature 130 directly into the substrate 1 10.
- Direct implantation measuring means 130 in the middle of the diodes 120 makes it possible to obtain a measurement point that is physically very close to the semiconductor junctions whose temperature is to be measured.
- This integration into the light source makes it possible to limit the space required for the disposition of the temperature measuring means, compared to known solutions.
- the measuring means may preferably comprise a bipolar diode.
- a bipolar diode which bases its operation on the measurement of a variation of the forward voltage of a bipolar diode under the influence of a specific electric current, comprising an arrangement of transistors and / or a current generator, can be implanted directly into the substrate 1 10 of the light source.
- the circuit is fed in common with the source 101, so no additional connection to a dedicated power source is required.
- a group among the rods 120 of the light source 1 10 can be used to obtain a measurement of the temperature.
- the group in question is powered by said specific electric current.
- said group among the rods 120 is fed periodically by said specific current for a period less than the period and during the rest of the period by a current determined for the group to participate in a lighting function.
- the embodiment of Figure 3 incorporates the features of Figure 2.
- the electroluminescent light source 201 includes a substrate 210 and a plurality of light emitting rods 220 protruding from the substrate.
- the rods 220 are divided into three distinct groups 222, 224, 226.
- groups are represented as bands, their geometry may be arbitrary.
- Each group comprises electroluminescent rods 220 having similar characteristics and can be independently powered, from so that each group emits light having a specific intensity and / or color.
- the source further comprises means for measuring the temperature of the diodes 230 for each of the groups 222, 224, 226.
- the substrate 210 is advantageously made of silicon, which makes it possible to integrate the means for measuring the temperature 230 directly into the substrate 210.
- the electroluminescent light source 301 comprises a first substrate 310 and a plurality of light emitting rods 320 projecting from the substrate.
- means for measuring the temperature of the rods are implanted on a second substrate 340 attached to the first substrate 310, so as to ensure good thermal bonding between the two substrates.
- the two substrates are attached to each other using, for example, a gold-tin weld.
- the second substrate 340 is attached to the first substrate 310 on the face of the latter which is opposite to the face on which the diodes 320 protrude.
- the location of the temperature measuring means 330 is chosen so as to obtain a measurement representative of the temperature of the sticks 320.
- the component resulting from this assembly is of the "multi chip package" type, the second substrate integrating an additional function, c. that is to say, the measurement of temperature, with respect to the primary function of the source, which is the emission of light rays.
- the embodiment of FIG. 5 incorporates the features of FIG. 3.
- the electroluminescent light source 401 comprises a substrate 410 and a plurality of light emitting rods 420 projecting from the substrate.
- the rods 420 are divided into three distinct groups 422, 424, 426.
- a larger plurality of groups may be provided for a given light source and according to the intended application, without departing from the scope of FIG. the present invention.
- groups are represented as bands, their geometry may be arbitrary.
- Each group comprises rods 420 having similar characteristics and can be independently powered so that each group emits light having a specific intensity and / or color.
- the source further comprises means for measuring the temperature of the sticks 430 for each of the groups 422, 424, 426.
- the measuring means 430 may be implanted on a second substrate 440 common to all measuring means. Alternatively, a dedicated medium substrate 430 may be provided. The substrate or substrates 430 are attached to the first substrate in a manner similar to the embodiment of FIG. 4 described above. The location of the means 430 is chosen to be able to measure, for each of the groups of rods 422, 424, 426, a temperature representative of the rods in question.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1558537A FR3041202B1 (fr) | 2015-09-14 | 2015-09-14 | Source lumineuse led a micro- ou nano-fils comprenant des moyens de mesure de la temperature |
PCT/EP2016/071497 WO2017046048A1 (fr) | 2015-09-14 | 2016-09-13 | Source lumineuse led a micro- ou nano-fils comprenant des moyens de mesure de la temperature |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3350845A1 true EP3350845A1 (fr) | 2018-07-25 |
Family
ID=55072819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16763837.8A Withdrawn EP3350845A1 (fr) | 2015-09-14 | 2016-09-13 | Source lumineuse led a micro- ou nano-fils comprenant des moyens de mesure de la temperature |
Country Status (7)
Country | Link |
---|---|
US (1) | US20180254265A1 (fr) |
EP (1) | EP3350845A1 (fr) |
JP (1) | JP2018530153A (fr) |
KR (1) | KR20180054607A (fr) |
CN (1) | CN108140696A (fr) |
FR (1) | FR3041202B1 (fr) |
WO (1) | WO2017046048A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3087246B1 (fr) * | 2018-10-15 | 2022-12-16 | Valeo Vision | Source lumineuse matricielle a architecture ajustable |
CN109887856B (zh) * | 2019-01-21 | 2021-10-22 | 珠海市协宇电子有限公司 | 一种可检测led温度的cob生产工艺 |
CN110207844B (zh) * | 2019-06-21 | 2021-10-01 | 京东方科技集团股份有限公司 | 一种温度传感器、温度监测方法及装置 |
CN111463336B (zh) * | 2020-05-11 | 2021-06-22 | 福建省信达光电科技有限公司 | 一种led灯具的制备方法 |
US11536899B2 (en) | 2020-06-30 | 2022-12-27 | Openlight Photonics, Inc. | Integrated bandgap temperature sensor |
US20220333982A1 (en) * | 2021-04-19 | 2022-10-20 | The Johns Hopkins University | High power laser profiler |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7335908B2 (en) * | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
JPWO2005104249A1 (ja) * | 2004-04-21 | 2007-08-30 | 松下電器産業株式会社 | 発光素子駆動用半導体チップ、発光装置、及び照明装置 |
CA2641782A1 (fr) * | 2006-02-10 | 2007-08-16 | Tir Technology Lp | Systeme et procede de commande de l'intensite d'une source lumineuse |
US8093788B2 (en) * | 2009-03-02 | 2012-01-10 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Light emitting device package for temeperature detection |
US9548286B2 (en) * | 2010-08-09 | 2017-01-17 | Micron Technology, Inc. | Solid state lights with thermal control elements |
KR20120052651A (ko) * | 2010-11-16 | 2012-05-24 | 삼성엘이디 주식회사 | 나노로드 발광소자 |
US9081555B2 (en) * | 2012-07-13 | 2015-07-14 | Qualcomm Incorporated | Method and apparatus for current derating with integrated temperature sensing |
FR3011381B1 (fr) * | 2013-09-30 | 2017-12-08 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
KR20150092674A (ko) * | 2014-02-05 | 2015-08-13 | 삼성전자주식회사 | 발광 소자 및 발광 소자 패키지 |
-
2015
- 2015-09-14 FR FR1558537A patent/FR3041202B1/fr active Active
-
2016
- 2016-09-13 KR KR1020187007303A patent/KR20180054607A/ko unknown
- 2016-09-13 EP EP16763837.8A patent/EP3350845A1/fr not_active Withdrawn
- 2016-09-13 CN CN201680053377.0A patent/CN108140696A/zh active Pending
- 2016-09-13 US US15/759,391 patent/US20180254265A1/en not_active Abandoned
- 2016-09-13 WO PCT/EP2016/071497 patent/WO2017046048A1/fr active Application Filing
- 2016-09-13 JP JP2018513424A patent/JP2018530153A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR3041202B1 (fr) | 2017-09-15 |
FR3041202A1 (fr) | 2017-03-17 |
KR20180054607A (ko) | 2018-05-24 |
WO2017046048A1 (fr) | 2017-03-23 |
JP2018530153A (ja) | 2018-10-11 |
CN108140696A (zh) | 2018-06-08 |
US20180254265A1 (en) | 2018-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2017046048A1 (fr) | Source lumineuse led a micro- ou nano-fils comprenant des moyens de mesure de la temperature | |
FR3012677A1 (fr) | Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore | |
EP3592113A1 (fr) | Système de pilotage de l'alimentation électrique d'une source lumineuse pixellisée | |
FR3056071A1 (fr) | Procede calibrage de l'intensite d'un courant electrique d'alimentation de sources lumineuses electroluminescentes pour obtenir une lumiere uniforme | |
EP3351057B1 (fr) | Gestion de puissance d'une source lumineuse led a micro- ou nano-fils | |
WO2017042513A1 (fr) | Dispositif electroluminescent a capteur de lumiere integre | |
EP3513120A1 (fr) | Câblage d'une source lumineuse de haute résolution | |
EP3616471B1 (fr) | Procédé et système de pilotage du courant électrique au sein d'une source lumineuse a semi-conducteur définissant au moins deux zones d'émission lumineuse distinctes | |
WO2017046107A1 (fr) | Source lumineuse led comprenant un circuit electronique | |
EP3253620B1 (fr) | Dispositif de connexion d'une source lumineuse à un dispositif d'alimentation électrique | |
WO2017046083A1 (fr) | Gestion de la tension directe d'une source lumineuse led a micro- ou nano-fils | |
US8692329B2 (en) | Electric resistance element suitable for light-emitting diode, laser diodes, or photodetectors | |
WO2020064824A1 (fr) | Source lumineuse matricielle pilotee en tension a circuit diagnostic pour un vehicule automobile | |
FR3090867A1 (fr) | Gestion d’informations dans un module lumineux pour véhicule automobile comprenant des sources lumineuses à élément semi-conducteur | |
FR3086723A1 (fr) | Source lumineuse matricielle a gradation de l’intensite lumineuse | |
EP3502549A1 (fr) | Module lumineux à éléments électroluminescents à coupure progressive | |
WO2017046106A1 (fr) | Source lumineuse led comprenant un circuit electronique | |
EP3857618A1 (fr) | Source lumineuse matricielle pour un vehicule automobile | |
Yan | Thermal management and characterization of Light-Emitting Diodes | |
WO2020064627A1 (fr) | Source lumineuse matricielle a circuit diagnostic pour un vehicule automobile |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20180306 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20190318 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20200818 |