EP3191614A1 - Procédé de réduction de l'adhérence de la saleté à un substrat - Google Patents

Procédé de réduction de l'adhérence de la saleté à un substrat

Info

Publication number
EP3191614A1
EP3191614A1 EP15763294.4A EP15763294A EP3191614A1 EP 3191614 A1 EP3191614 A1 EP 3191614A1 EP 15763294 A EP15763294 A EP 15763294A EP 3191614 A1 EP3191614 A1 EP 3191614A1
Authority
EP
European Patent Office
Prior art keywords
substrate
deposited
thin
layer
closed layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15763294.4A
Other languages
German (de)
English (en)
Inventor
Steffen Günther
Cindy STEINER
Jörg KUBUSCH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP3191614A1 publication Critical patent/EP3191614A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes

Definitions

  • the invention relates to a method for reducing the adhesion of dirt to a substrate and in particular to substrates having a plastic surface.
  • EP 1 238 71 7 A2 Another method of applying a filler material followed by embossing a structure is known from EP 1 238 71 7 A2.
  • shapes are formed on the basis of a mathematical function as a structure, which requires complex process control requires.
  • WO 2006/021 507 A1 a structured surface is built up by means of an electrochemical deposition method.
  • the invention is therefore based on the technical problem of providing a method by means of which the disadvantages of the prior art are overcome.
  • a structure on the surface of a substrate is therefore based on the technical problem of providing a method by means of which the disadvantages of the prior art are overcome.
  • Substrate is first deposited in a first process step, a thin, not completely closed layer of a material by means of a vacuum coating process on at least one surface region of the substrate.
  • the term thin, incompletely closed layer is to be understood in the sense of the invention that the layer thickness is less than 1 00 nanometers and that the surface area after the coating process has both a plurality of subregions on which layer material is deposited, as well as a plurality of Subareas on which no layer material is deposited.
  • An incompletely closed layer can be produced, for example, by placing a mask over the substrate, whereby only a few partial areas on the substrate are covered with a layer material during a coating process. According to the invention, however, an incompletely closed layer is preferably deposited without a mask by using a mask
  • Coating process such a low coating rate is chosen when no more the entire surface of the substrate is coated with layer material, but only individual portions of the substrate surface are covered with laminated islands. Setting a required low coating rate depends on the particular coating process used and can be determined by laboratory experiments. By depositing the thin, incompletely closed layer, the surface on the substrate already acquires a first roughness that is conducive to the lotus effect, thereby reducing soil adhesion to the substrate.
  • vacuum deposition processes with a low deposition rate are suitable for depositing such a thin, not completely closed layer on a substrate.
  • the vacuum coating process can also be operated reactively.
  • the substrate is coated with a moving substrate by means of a dynamic deposition process
  • vacuum coating processes with a deposition rate of up to 30 nm m / min are suitable.
  • the thin, not completely closed layer is deposited by means of magnetron sputtering. With magnetron sputtering, the deposition rate downwards can be chosen almost arbitrarily small.
  • the deposition rate can also be set so low that on the surface area a surface coverage of deposited material is achieved, which is not even sufficient for the formation of a single fully closed atomic layer or molecular layer of the deposited material. In any case, this procedure ensures that a thin, incompletely closed layer is formed on the surface area of the substrate. Since in the novel deposition of the thin, non-closed layer only the surface roughness achieved thereby is in the foreground, the material of the deposited layer plays only a minor role. If the thin, non-closed layer is deposited by means of magnetron sputtering, it is therefore also possible to use all materials that can be deposited on the substrate by means of magnetron sputtering.
  • not completely closed layers were deposited by means of magnetron sputtering, which contained at least one of the elements from the group silicon, zinc, titanium, tin or aluminum and which were all suitable for the inventive method.
  • the aforementioned chemical elements are deposited as oxide in a reactive process in the presence of an oxygen-containing gas.
  • the formation of an incompletely closed layer can be more easily adjusted than in a metallic deposition process, because the present Oxygen leads to the formation of oxides on the target surface, which reduces the deposition rate.
  • atomic layer deposition processes and layer materials known from atomic layer deposition
  • deposition processes are also known by the term atomic layer deposition or shortened ALD. If the feed rate of the substrate is set sufficiently high during dynamic coating of a substrate by means of ALD, a thin, not completely closed layer can also be formed by means of ALD. Again, it can be easily determined in laboratory tests, which feed rate is required for the formation of a not completely closed layer.
  • the thin, incompletely closed layer is deposited on the surface region of the substrate, at least this surface region is subjected to accelerated ions in a second process step and thus an ion etching process is carried out, whereby the surface region is finally given a roughness effecting the lotus effect.
  • the ions of a plasma generated by means of a sputtering magnetron can be used for this method step. This is particularly advantageous if the thin, not completely closed layer is already deposited by means of magnetron sputtering, because then the same system technology and at least similar pressures in the process chamber can be used for both method steps.
  • all other processes known for ion etching are also suitable for the second process step.
  • the carrying out of the ion etching by means of a magnetron plasma is particularly suitable for reducing the dirt adhesion to plastic substrates or to substrates which have at least one covering layer made of plastic. It is believed that the energy of the accelerated ions from a magnetron plasma correlates in particular with the binding energy of molecules of a plastic, that is, the energy of the accelerated and directed to the substrate ions is so large to knock out particles with a size from the surface leads to a roughness that is conducive to the lotus effect.
  • the inventive method is characterized by a number of advantages.
  • the method according to the invention is very economical, because only a very thin and not completely closed layer is deposited, whereby only a small amount of layer material is required.
  • the method according to the invention also works without a complicated masking step in order to work out a surface structure required for the lotus effect from a cover layer.
  • Such a masking step is already inherent in the method of the invention.
  • ions stick to these islands of material.
  • the larger a material island the larger the number of adhering ions and the greater the repelling effect that such a material island exerts on the direction of the substrate surface due to the adhering ions in the further course of the etching process.
  • individual subregions on the surface of the substrate are influenced to a different extent by the ion etching, which in turn has a positive effect on the achievable surface roughness.
  • the method according to the invention thus also excels in ion etching by a type of self-organizing masking, for which no additional effort has to be made. The present invention will be explained in more detail with reference to an embodiment.
  • a belt-shaped substrate formed as a fluoropolymer ETFE was treated in a dynamic process according to the invention for producing a dirt-repellent surface.
  • the ETFE substrate was wrapped at a belt speed of 1.3 m / min.
  • the ETFE substrate was passed past two process stations positioned one behind the other. These process stations each comprised a double magnetron system, which is typically used for layer deposition by means of cathode sputtering. Both process stations were operated with a polar pulsed voltage, the pulse frequency was 50 kHz.
  • the fed-in power of the process stations was 4 kW for the first station and 8 kW for the second station.
  • the double magnetron was equipped with targets, which consisted of a zinc-tin alloy.
  • the second station had magnesium targets.
  • both process stations were operated in reactive mode.
  • the first station was responsible for the first process step, to produce a very thin and not completely closed layer on the plastic substrate. In this case, it was exploited that the supplied reactive oxygen gas causes oxidation of the magnetron targets and thereby the deposition rate on the ETFE substrate compared to a
  • the magnesium target material of the second station has no appreciable coating rate in fully reactive mode.
  • it is the oxygen ions generated in the magnetron plasma that attack and degrade the polymer material. In particular, this naturally occurs at the surface subregions of the plastic substrate where the material applied to the first station is absent.
  • the role of the ETFE substrate has not been fully addressed by the method of the invention.
  • One end of the tape-shaped ETFE substrate remained untreated.
  • a first sample was cut out of the area treated according to the invention and a second sample was cut out of the untreated area. Both excised samples were then exposed to free-weather weathering for several months. At regular intervals, the contamination of the samples was examined. For this purpose, the determination of the optical transmission in the samples was resorted to. If the surfaces foul, the transmission of the samples should be lower. A comparison of the respective transmission changes to the associated initial value therefore makes it possible to make a qualitative statement regarding the contamination of a sample.
  • FIG. 1 shows graphically the difference between the optical transmission of the sample treated according to the invention and the optical transmission of the untreated sample. It can be seen from FIG. 1 that the difference between the two samples with respect to the optical transmission increases continuously over time. The lower transmission loss of the sample treated according to the invention compared to the untreated sample leads to the conclusion that the sample treated according to the invention is less polluted during the observation period than the untreated sample.
  • the method according to the invention can thus be used particularly advantageously for components having an optical function or for decorative components and there causes the reduction of the regular cleaning effort and, accordingly, the increase in cost-effectiveness.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de réduction de l'adhérence de la saleté à un substrat; une couche mince, non complètement fermée, d'une matière est déposée au moins sur une zone de la surface du substrat par un procédé de revêtement sous vide et la zone de la surface est ensuite soumise à des ions accélérés.
EP15763294.4A 2014-09-11 2015-09-10 Procédé de réduction de l'adhérence de la saleté à un substrat Withdrawn EP3191614A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014113097.9A DE102014113097A1 (de) 2014-09-11 2014-09-11 Verfahren zum Reduzieren der Schmutzhaftung an einem Substrat
PCT/EP2015/070695 WO2016038132A1 (fr) 2014-09-11 2015-09-10 Procédé de réduction de l'adhérence de la saleté à un substrat

Publications (1)

Publication Number Publication Date
EP3191614A1 true EP3191614A1 (fr) 2017-07-19

Family

ID=54106352

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15763294.4A Withdrawn EP3191614A1 (fr) 2014-09-11 2015-09-10 Procédé de réduction de l'adhérence de la saleté à un substrat

Country Status (5)

Country Link
US (1) US10557196B2 (fr)
EP (1) EP3191614A1 (fr)
JP (1) JP6649948B2 (fr)
DE (1) DE102014113097A1 (fr)
WO (1) WO2016038132A1 (fr)

Citations (1)

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Publication number Priority date Publication date Assignee Title
DE102005049280A1 (de) * 2005-10-14 2007-06-14 Friedrich-Schiller-Universität Jena Verfahren zur Erzeugung einer Nanostruktur und optisches Element mit einer Nanostruktur

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JPS58118293A (ja) * 1982-01-08 1983-07-14 Dainippon Ink & Chem Inc 光記録媒体
JPS63270452A (ja) * 1987-04-27 1988-11-08 Oki Electric Ind Co Ltd 薄膜の被着方法
US6555430B1 (en) 2000-11-28 2003-04-29 International Business Machines Corporation Process flow for capacitance enhancement in a DRAM trench
DE10110589A1 (de) 2001-03-06 2002-09-12 Creavis Tech & Innovation Gmbh Geometrische Formgebung von Oberflächen mit Lotus-Effekt
DE10134362A1 (de) 2001-07-14 2003-01-30 Creavis Tech & Innovation Gmbh Strukturierte Oberflächen mit Lotus-Effekt
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US20060006302A1 (en) * 2004-07-07 2006-01-12 Gragg Kenneth A Apparatus to support at least one compressed gas cylinder for assisting with safely assembling SCUBA Gear
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US20070184257A1 (en) * 2006-02-09 2007-08-09 Isoflux, Inc. Formation of nanoscale surfaces for the atttachment of biological materials
DE102006056578A1 (de) * 2006-11-30 2008-06-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Nanostruktur an einer Kunststoffoberfläche
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JP2009128543A (ja) * 2007-11-21 2009-06-11 Panasonic Corp 反射防止構造体の製造方法
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JP5598080B2 (ja) * 2010-05-17 2014-10-01 大日本印刷株式会社 ガスバリア性シートの製造方法
KR101283665B1 (ko) 2010-09-30 2013-07-08 바코스 주식회사 고투광성, 초발수성 표면 구현을 위한 나노구조물 형성 방법
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Also Published As

Publication number Publication date
JP6649948B2 (ja) 2020-02-19
US10557196B2 (en) 2020-02-11
JP2017528600A (ja) 2017-09-28
DE102014113097A1 (de) 2016-03-17
WO2016038132A1 (fr) 2016-03-17
US20170218504A1 (en) 2017-08-03

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