EP3159746B1 - Spiral en silicium fortement dopé pour pièce d'horlogerie - Google Patents

Spiral en silicium fortement dopé pour pièce d'horlogerie Download PDF

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Publication number
EP3159746B1
EP3159746B1 EP15190441.4A EP15190441A EP3159746B1 EP 3159746 B1 EP3159746 B1 EP 3159746B1 EP 15190441 A EP15190441 A EP 15190441A EP 3159746 B1 EP3159746 B1 EP 3159746B1
Authority
EP
European Patent Office
Prior art keywords
balance spring
oscillator
timepiece
coil
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP15190441.4A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3159746A1 (fr
Inventor
Richard Bossart
Olivier HUNZIKER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rolex SA
Original Assignee
Rolex SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rolex SA filed Critical Rolex SA
Priority to EP15190441.4A priority Critical patent/EP3159746B1/fr
Priority to US15/295,449 priority patent/US10539926B2/en
Priority to JP2016204033A priority patent/JP6869689B2/ja
Priority to CN201611078699.9A priority patent/CN106597828B/zh
Publication of EP3159746A1 publication Critical patent/EP3159746A1/fr
Application granted granted Critical
Publication of EP3159746B1 publication Critical patent/EP3159746B1/fr
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    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/20—Compensation of mechanisms for stabilising frequency
    • G04B17/22—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature
    • G04B17/227—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature composition and manufacture of the material used
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/063—Balance construction
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/066—Manufacture of the spiral spring
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/20—Compensation of mechanisms for stabilising frequency
    • G04B17/22—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature

Definitions

  • the invention relates to a spiral spring for an oscillator of a timepiece, as well as an oscillator, a timepiece movement and a timepiece as such which comprise such a spiral spring. Finally, it also relates to a method of manufacturing such a spiral spring.
  • the regulation of mechanical watches relies on at least one mechanical oscillator, which generally comprises a flywheel, called a pendulum, and a spiral wound spring, called spiral spring or more simply spiral.
  • the hairspring can be fixed at one end to the axis of the balance and at the other end to a fixed part of the timepiece, such as a bridge, called a rooster, on which the axis of the balance pivots.
  • the spiral spring equipping the mechanical watch movements of the state of the art is in the form of an elastic metal blade or a silicon blade of rectangular section, the majority of which is wound on itself in a spiral Archimedes.
  • the sprung balance oscillates around its equilibrium position (or dead point). When the pendulum leaves this position, it arms the hairspring.
  • the accuracy of mechanical watches depends on the stability of the natural frequency of the oscillator formed by the balance and the spiral.
  • the thermal expansions of the balance and the balance as well as the variation of the Young's modulus of the balance spring, modify the natural frequency of this oscillating assembly, thus disturbing the accuracy of the watch.
  • E is the Young's modulus of the oscillator hairspring
  • (1 / F) dF / dT is the thermal coefficient of the oscillator, also simply called by the acronym CT
  • (1 / E) dE / dT is the thermal coefficient of the Young's modulus of the spiral of the oscillator, also called by the acronym CTE
  • ⁇ s and ⁇ b are respectively the coefficients of thermal expansion of the spiral and the pendulum of the oscillator.
  • CTE In the description to follow, by “CTE”, we mean in particular “CTE equivalent or apparent”.
  • the document EP1258786 proposes using a spiral formed in a particular paramagnetic alloy Nb-Hf comprising an advantageous rate of Hf.
  • the alloy chosen is relatively complex to manufacture.
  • the document EP1422436 discloses another solution based on a silicon balance spring comprising an oxide layer. This solution requires a thick oxide layer. Its manufacture requires treating the hairspring for a long time at very high temperature, which is a drawback.
  • the document CH 699 780 discloses a silicon spiral or the "CTE" is compensated by a coating comprising a metal or an alloy or by internally doped layers.
  • the object of the invention is to provide another spiral spring solution that allows the thermo-compensation of the oscillator, to obtain an oscillator whose frequency is independent or quasi-independent of the temperature, which does not have any or some of the disadvantages of the state of the art.
  • the invention relates to a hairspring for an oscillator of a timepiece, characterized in that it comprises a part, in particular at least one turn or a turn portion, provided with highly doped doping silicon. greater than or equal to 10 18 at / cm 3 to allow thermo-compensation of the oscillator.
  • Said part, in particular said turn or said turn portion, has a locally varying section along its length, in particular along the length of said turn or of said turn portion.
  • This variation is a variation of thickness and / or height.
  • said part may comprise an oxidized outer layer, in particular made of silicon dioxide SiO 2 .
  • an oscillator for a timepiece comprises a balance-sprung assembly, the spiral being in the form of an elastic blade of rectangular section, wound on itself in an Archimedean spiral .
  • the balance is made of a copper-berrylium alloy, in a known manner. Alternatively, other materials may be used for the balance.
  • the spiral could have another basic geometry, such as a non-rectangular section.
  • the objective of the invention is to propose a solution approaching at most a value of the thermal coefficient (CT) of zero for the balance-spring, whose Oscillations thus become independent or quasi-independent of the temperature. For this, it is necessary to couple the spiral material with that of the balance to obtain a good result.
  • CT thermal coefficient
  • the hairspring must have a Young's modulus (CTE) thermal coefficient of the order of 26 ppm / ° C to heat compensate the oscillator.
  • the spiral of the embodiments is made of silicon and comprises at least one coil or turn portion of highly doped silicon.
  • the silicon has a doping of an ionic density greater than or equal to 10 18 at / cm 3 , or even greater than or equal to 10 19 at / cm 3 , or even greater than or equal to 10 20 at / cm 3 .
  • This doping of the silicon is obtained by means of elements providing an additional electron (doping of p-type or "p-doped silicon”) or one less electron (doping of n-type or "n-doped silicon").
  • this single highly doped silicon may be sufficient to obtain a thermo-compensation of the oscillator.
  • the n-type doping is for example obtained by using at least one of: antimony Sb, arsenic As, or phosphorus P.
  • the p-type doping is obtained for example using boron B.
  • the heavily doped silicon portion advantageously occupies the entire length of the hairspring.
  • all the silicon turns of a spiral can advantageously be heavily doped.
  • the turn or the turn portion is strongly doped over its entire section.
  • the heavily doped silicon part occupies the entire section of a turn or a portion of turn, that is to say that the doping is massive.
  • the heavily doped silicon portion occupies only a surface layer of the section of a turn or of a turn portion, in particular a wall of a turn or a turn portion.
  • the doping is advantageously uniform on all the turns of the spiral, or on the entire spiral and / or over a section of the spiral. As a variant, it may be non-uniform, variable depending on the turns or the portions of the turns and / or on the section of the turns or portions of the turns of the spiral.
  • the geometry of the spiral spring has sectional variations along its length to take into account this anisotropy.
  • the hairspring exhibits a variation in section as a function of the crystallographic orientation of the highly doped silicon.
  • a first embodiment is thus based on a modulation of the spiral spiral thickness, that is to say a variation of the dimension of the side of the turns located in a plane parallel to the plane of the spiral, more particularly a variation of the dimension. turns which is locally perpendicular to the neutral fiber of the hairspring in a plane parallel to the plane of the hairspring.
  • This modulation of the thickness is chosen to promote the bending of the first zones of the spiral. These first zones of the spiral have a local CTE higher than the local CTE of second spiral zones.
  • the modulation of the thickness of the turns, more particularly the thinning of the thickness of the turns in these first zones of the spiral thus makes it possible to optimize the thermo-compensation of the oscillator.
  • this modulation of the thickness impacts the regularity of the rigidity of the blade, and therefore the mechanical behavior at constant temperature.
  • this effect is considered limited compared to the effect of changes in spiral CTE with temperature.
  • the figure 1 represents a spiral 1 with a constant pitch at equilibrium or at rest according to one embodiment of the invention, consisting of nine turns, and comprising an evolution of the thickness of the turns presented by the curve of the figure 2 .
  • This figure 2 shows the evolution of the relative thickness (e / e0) of the turns as a function of the angle ( ⁇ ), in a coordinate system in polar coordinates and centered on the center of the spiral. It appears that each turn has thinning 2 on areas extending a given angular range, this angular range varying according to the doping of the spiral silicon and a possible oxidation of the highly doped spiral. This angular range can be between 2 and 80 degrees, especially between 5 and 40 degrees, especially between 5 and 20 degrees.
  • the spiral plane substantially coincides with a ⁇ 001 ⁇ plane of the silicon single crystal.
  • the first zones of the spiral, in particular the thinning 2 coincide substantially with the places where the tangent to the neutral fiber is aligned with a ⁇ 100> direction of the silicon single crystal.
  • the thinning 2 are periodically arranged along the spiral turns in a period of 90 °.
  • the thinning may be periodically disposed along the coils of the spiral at a period of 180 degrees. Apart from thinnings, the thickness may remain substantially constant or not.
  • the thinning namely the local variations in the size of the turns, may be equal or not.
  • the geometries of the thinning may differ or not.
  • thinning is periodically arranged according to a given period even if the local variations in the size of the turns or the geometries of the aminicismes differ.
  • the spiral can have any thickness and not all, while maintaining a good thermal behavior, which allows to determine these parameters according to the criteria set by the search for the best chronometric performance of the oscillator.
  • the figure 3 alternatively represents a periodic change in the relative thickness (e / e0) of the turns which have a linear profile over 45 degrees.
  • each turn has a minimum thickness 2 for the angles 45, 135, 225 and 315 degrees, and maximum thicknesses 3 for the angles 0, 90, 180, and 270 degrees.
  • the 0 degree angle corresponds to the inner end of the hairspring.
  • the spiral has a thickness varying linearly with the angle.
  • the evolution of the thickness is therefore periodic and similar on each turn.
  • the reduction in thickness can range from 5 to 90% relative to the maximum thickness, especially from 10 to 40% relative to the maximum thickness.
  • the variation of the section of the coils spiral can be achieved by a change in the height of turns, that is to say, the dimension perpendicular to the plane of the spiral.
  • This modification can for example be obtained by gray photolithography, for the same purpose of promoting in this way the bending of the first zones of the spiral.
  • this variation of the spiral section as a function of the angle, in a coordinate system in polar coordinates is periodic. In particular, this period can be 90 or 180 degrees.
  • this section variation in order to optimize the thermal behavior of the hairspring can be combined with a complementary section variation, generally non-periodic, suitable for optimizing the chronometric behavior of the hairspring.
  • the zones of the spiral to be favored can be determined by a theoretical calculation and / or empirically.
  • thermo-compensation brings a reinforced effect of thermo-compensation. It may also be possible to provide stronger doping in certain areas of the spiral, including the favorable areas mentioned above. It is also possible, alternatively or complement, to provide stronger doping in the areas closer to the surface of the spiral.
  • This variation of the doping can be made a posteriori by diffusion or ion implantation, to obtain a "fine" adjustment of the CTE of the spiral after its manufacture.
  • the different variations described in the previous embodiments can be combined.
  • the figure 4 illustrates this effect.
  • the four straight lines 11, 12, 13, 14 respectively represent four spirals each having a different sectional variation, obtained by the periodic modulation of the section of the spiral, whose ratio R between the minimum thickness and the maximum thickness of the turns is equal to respectively 1, 0.55, 0.33, 0.10.
  • These four spirals are associated with the same pendulum CuBe2 to form oscillators.
  • the oxide thickness (c) necessary to reach a zero thermal coefficient is represented as a function of the logarithm of the ion density (Log di). It is found in all cases that an ion density doping up to 10 18 at.cm -3 requires an oxide layer tending towards 3 microns.
  • the invention also relates to a spiral comprising a heavily doped silicon part and comprising an outer oxidation layer.
  • embodiments are obtained by adding an oxide layer to the previously described embodiments.
  • the oxide layer has a small thickness, its maximum thickness being less than or equal to 5 microns, or even less than or equal to 3 microns, even less than or equal to 2.5 microns, even less than or equal to 2 microns, or even less than or equal to 1.5 microns.
  • the invention also relates to a method of manufacturing a spiral as described above.
  • This process comprises in particular a spiral cutting step in a wafer of heavily doped silicon, for example by the method of deep reactive ion etching (DRIE), this cutting being such that it allows to form a variable section of spiral turns. More precisely, according to one embodiment, this cutting makes it possible to form turns of variable thickness by the choice of the shape on the mask.
  • Another embodiment consists in forming turns of variable height, for example using a gray photolithography, multiple etching using different masks, or other methods known to those skilled in the art.
  • the wafer can be manufactured from a highly doped silicon ingot itself obtained by a step of high silicon doping during its growth.
  • the manufacturing method comprises a step of cutting the spiral in a silicon wafer, and then a step of doping the silicon after the cutting, in particular by diffusion or ion implantation, to obtain a spiral comprising highly doped silicon.
  • an (additional) doping step is therefore added after cutting.
  • the silicon wafer may initially be heavily doped or not. This embodiment makes it possible to more strongly dope the areas close to the surface and more stressed during oscillation deformations. Note that the fact of performing a posterior doping has the advantage of allowing to obtain a higher doping rate and thus avoid the need for oxidation of silicon or reduce the necessary oxide layer.
  • This manufacturing method also has the advantage of taking advantage of the flexibility of the cutting in a silicon wafer, which makes it possible to achieve very diverse geometries, and in particular to vary with very little limitation the thickness of the blade forming a twist of the spiral.
  • the wafer may preferably be made of silicon monocrystal oriented in the ⁇ 100> direction.
  • the manufacturing method comprises a complementary oxidation step.
  • the oxidation layer used has a small thickness, in all embodiments, which has the advantage of allowing its realization at a low oxidation temperature, and thus prevent premature wear of the oven used.
  • this small thickness of the oxidation layer also allows its implementation using oxygen as a precursor, instead of the water vapor used for thicker oxidation layers, thus forming a layer of oxidation of a high quality while minimizing its growth time.
  • the invention also relates to a timepiece oscillator, a timepiece movement and a timepiece, such as a watch, for example a wristwatch, comprising a hairspring as described above.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Springs (AREA)
EP15190441.4A 2015-10-19 2015-10-19 Spiral en silicium fortement dopé pour pièce d'horlogerie Active EP3159746B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP15190441.4A EP3159746B1 (fr) 2015-10-19 2015-10-19 Spiral en silicium fortement dopé pour pièce d'horlogerie
US15/295,449 US10539926B2 (en) 2015-10-19 2016-10-17 Balance spring made of heavily doped silicon for a timepiece
JP2016204033A JP6869689B2 (ja) 2015-10-19 2016-10-18 高濃度にドープされたシリコンからなる時計用のヒゲゼンマイ
CN201611078699.9A CN106597828B (zh) 2015-10-19 2016-10-19 用于计时器的由重掺杂硅制成的游丝

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP15190441.4A EP3159746B1 (fr) 2015-10-19 2015-10-19 Spiral en silicium fortement dopé pour pièce d'horlogerie

Publications (2)

Publication Number Publication Date
EP3159746A1 EP3159746A1 (fr) 2017-04-26
EP3159746B1 true EP3159746B1 (fr) 2018-06-06

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EP15190441.4A Active EP3159746B1 (fr) 2015-10-19 2015-10-19 Spiral en silicium fortement dopé pour pièce d'horlogerie

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US (1) US10539926B2 (zh)
EP (1) EP3159746B1 (zh)
JP (1) JP6869689B2 (zh)
CN (1) CN106597828B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI774925B (zh) * 2018-03-01 2022-08-21 瑞士商Ｃｓｅｍ瑞士電子及微技術研發公司 製造螺旋彈簧的方法
EP3534222A1 (fr) * 2018-03-01 2019-09-04 Rolex Sa Procédé de réalisation d'un oscillateur thermo-compensé
TWI796444B (zh) 2018-03-20 2023-03-21 瑞士商百達翡麗日內瓦股份有限公司 用於製造精確剛度之時計熱補償游絲的方法
WO2021170473A1 (fr) 2020-02-25 2021-09-02 Rolex Sa Composant horloger en silicium pour pièce d'horlogerie
EP4212965A1 (fr) * 2022-01-14 2023-07-19 Richemont International S.A. Procede de limitation de la deformation d'une piece d'horlogerie en silicium

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JPH11201820A (ja) * 1998-01-14 1999-07-30 Yokogawa Electric Corp 赤外放射温度計とその製造方法
EP1258786B1 (fr) 2001-05-18 2008-02-20 Rolex Sa Spiral auto-compensateur pour oscillateur mécanique balancier-spiral
DE60206939T2 (de) 2002-11-25 2006-07-27 Csem Centre Suisse D'electronique Et De Microtechnique S.A. Spiraluhrwerkfeder und Verfahren zu deren Herstellung
EP1605182B8 (fr) * 2004-06-08 2010-07-14 CSEM Centre Suisse d'Electronique et de Microtechnique S.A. - Recherche et Développement Oscillateur balancier-spiral compensé en température
EP1857891A1 (fr) * 2006-05-17 2007-11-21 Patek Philippe Sa Ensemble spiral-virole pour mouvement d'horlogerie
EP2151722B8 (fr) * 2008-07-29 2021-03-31 Rolex Sa Spiral pour résonateur balancier-spiral
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Also Published As

Publication number Publication date
JP2017083434A (ja) 2017-05-18
US20170108831A1 (en) 2017-04-20
EP3159746A1 (fr) 2017-04-26
CN106597828B (zh) 2021-02-12
JP6869689B2 (ja) 2021-05-12
US10539926B2 (en) 2020-01-21
CN106597828A (zh) 2017-04-26

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