EP3088969B1 - Thermocompensierte spiralfeder und verfahren zu deren herstellung - Google Patents

Thermocompensierte spiralfeder und verfahren zu deren herstellung Download PDF

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Publication number
EP3088969B1
EP3088969B1 EP16161007.6A EP16161007A EP3088969B1 EP 3088969 B1 EP3088969 B1 EP 3088969B1 EP 16161007 A EP16161007 A EP 16161007A EP 3088969 B1 EP3088969 B1 EP 3088969B1
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EP
European Patent Office
Prior art keywords
elastically flexible
flexible strand
silicon oxide
spiral spring
separation layer
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English (en)
French (fr)
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EP3088969A1 (de
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Marc-André Glassey
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Sigatec SA
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Sigatec SA
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    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/20—Compensation of mechanisms for stabilising frequency
    • G04B17/22—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature
    • G04B17/227—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature composition and manufacture of the material used
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/066—Manufacture of the spiral spring

Definitions

  • the present invention relates to the field of watchmaking. More specifically, it relates to a thermocompensated spiral spring and its manufacturing process.
  • An oscillator is present in any watch movement. This is commonly known as the regulating organ of the watch movement.
  • the function of this oscillator is to divide the time into equal units and thus provide the rate on which the measurement of time is based.
  • a mechanical oscillator conventionally used in watchmaking results from the coupling of a spiral spring and a rocker acting as a flywheel.
  • the spiral spring is a spiral spring that produces a return torque on the balance as soon as it is out of a specific position called neutral position.
  • the rocker performs a repetitive reciprocating motion in which it is alternately recalled to the neutral position and then carried beyond it because of its momentum. This back and forth movement is regular and is used to divide time into equal units.
  • the accuracy of the running of a mechanical watch depends on the stability of the frequency of the mechanical oscillator.
  • the stability of this frequency depends in turn largely on the stability of the elastic characteristics of the spiral spring of the mechanical oscillator.
  • These elastic characteristics can in particular vary with temperature. In this respect, it is known that a change in temperature may result in an acceleration or a slowing of the running of a watch.
  • the "Young's modulus thermal coefficient" describes the variation of the modulus of elasticity of a material as a function of temperature.
  • the thermal coefficient of the Young's modulus of Spiral spring is a relevant quantity for the questions of accuracy of time measurement.
  • spiral springs used in mechanical watches are made of metal. Historically, they were first made of steel, then special alloys developed specifically to obtain spiral springs virtually insensitive to temperature changes. However, in recent years spiral springs made of silicon or other non-metallic materials have emerged, for which there are problems of variation of the Young's modulus as a function of temperature.
  • Solutions to reduce the sensitivity of silicon spiral springs to temperature changes have been devised. They use the principle of a thermal compensation performed by a layer of silicon oxide.
  • This layer of silicon oxide may be an outer layer, as proposed by patents or patent applications EP 1 422 436 , WO 2009/068091 and EP 2 284 629 .
  • the Swiss patent application CH 699 780 proposes a solution by which a spiral spring is provided with a layer of non-surface silicon oxide.
  • a spiral spring according to the preamble of the appended claim 1 is a thermocompensated spiral spring for mechanical oscillator of timepiece.
  • a spring according to the preamble of appended claim 1 comprises an elastically flexible strand which extends along a spiral line and which comprises at least a portion of a first material, namely monocrystalline silicon, and at least one layer separating into a second material, namely silicon oxide.
  • the monocrystalline silicon portion is mechanically bonded to the silicon oxide separating layer.
  • a first object of the invention is to propose an alternative to the known solution of the Swiss patent application. CH 699 780 mentioned above and by virtue of which a spiral spring is provided with a layer of non-surface silicon oxide.
  • a second object of the invention is to propose a spiral spring which, while being according to the preamble of appended claim 1, is such that there is a method for carrying it out and providing a greater choice as to the orientation. and the shape of the separation layer.
  • spiral spring according to claim 1 attached.
  • This spiral spring is different from that described in the Swiss patent application CH 699 780 mentioned above in that it comprises at least one portion of a third material different from the monocrystalline silicon and the silicon oxide, in that the separation layer made of silicon oxide separates the monocrystalline silicon portion from the portion into the third material, and in that the portion of the third material is mechanically bonded to the silicon oxide separating layer.
  • the spiral spring according to the invention has been imagined in conjunction with a manufacturing method for producing it. This manufacturing process is explained later and constitutes another aspect of the invention. In other words, the spiral spring according to the invention is such that there is a method for achieving it, in accordance with the second purpose mentioned above.
  • the separating layer of the spiral spring according to the invention can extend along a line that is simply spiral. It may also have another shape and, in many cases where it is so, the spiral spring according to the invention can be further manufactured, for example by means of the manufacturing method according to the invention.
  • the separating layer of the spiral spring according to the invention may be parallel to the average fiber of the elastically flexible strand. Locally or everywhere, it may also have another orientation and, in many cases where it is so, the spiral spring according to the invention can still be manufactured, for example by means of the manufacturing method according to the invention.
  • the spiral spring according to the invention can be manufactured, for example by means of the manufacturing method according to the invention, including in certain cases where its separation layer or layers do not extend according to a line simply spiral, but have another shape, and / or in some cases where its or separation layers are not parallel to the average fiber elastically flexible strand, but have another orientation, locally or everywhere.
  • the invention provides a greater choice as to the orientation and shape of the separation layer, according to the above-mentioned second purpose.
  • separation layer or several separation layers are used to modify once or more times the bending stiffness of the elastically flexible strand, along it, in addition to producing thermocompensation.
  • the spiral spring according to the invention has the advantage of allowing its manufacture in such a way that it can be obtained a very high precision on the thickness of its separating layer or layers. In particular, this very high precision can be obtained with the manufacturing method according to the invention.
  • spiral spring defined above may incorporate one or more other advantageous characteristics, alone or in combination, in particular among those defined below.
  • the third material is polycrystalline silicon.
  • the silicon oxide separating layer or several silicon oxide separation layers each separating a monocrystalline silicon portion and a portion of the third material from each other by being mechanically bonded to these portions comprise several segments. not parallel to the spiral line, these segments being offset with each other along the elastically flexible strand.
  • the number of said segments per millimeter of elastically flexible strand is modified at least once along the elastically flexible strand.
  • the elastically flexible strand has a bending stiffness that the silicon oxide separation layer or several silicon oxide separation layers each separating a portion of monocrystalline silicon and a portion of the third material from each other by being mechanically bonded to these portions change at least once along the elastically flexible strand.
  • the elastically flexible strand has a flexural stiffness and a cross-section which is modified at least once along the elastically flexible strand so as to modify at least once the bending stiffness along the elastically flexible strand.
  • the elastically flexible strand comprises a repetition of a sequence which succeeds itself along the elastically flexible strand, this sequence being a succession in an order which, along the elastically flexible strand, is: monocrystalline silicon portion , then separation layer of silicon oxide, then portion of the third material, and then separation layer of silicon oxide.
  • the sequence extends a distance along the elastically flexible strand, this distance being modified at least once along the elastically flexible strand.
  • the silicon oxide separating layer extends along a surface which is fluted over at least a portion of the length of the elastically flexible strand.
  • the silicon oxide separating layer extends along a guide line and parallel to a generatrix which intersects a plane in which the elastically flexible strand extends.
  • the manufacturing method defined above may incorporate one or more other advantageous characteristics, alone or in combination, in particular among those specified hereinafter.
  • the third material is polycrystalline silicon in step c).
  • the manufacturing method comprises a step which takes place after step c) and in which the wafer provided with the separating layer and the third material or the spiral spring is subjected to conditions which are identical to conditions used for perform a thermal oxidation of silicon.
  • the wafer is part of a wafer in which the wafer comprises a first main face connected to a support and a second main face opposite to the first main face, the manufacturing method. comprising a step which takes place after step c) and in which the second main face of the wafer is polished.
  • steps a) and d) is carried out by etching.
  • the separation layer of silicon oxide is created by thermal oxidation in step b).
  • the wafer is part of a wafer in which a main face of the wafer is joined to a support, the manufacturing method comprising a step which takes place after step c ) and in which the spiral spring is removed from the support.
  • the manufacturing method comprises at least one post-treatment which takes place after step d) and which is chosen from a post-treatment increasing the impact resistance of the spiral spring, a post-treatment increasing the conductivity of the spiral spring. and a post-treatment changing stiffness in bending of the elastically flexible strand.
  • the figure 1 represents a thermocompensated spiral spring that can be part of a watch movement of a mechanical watch.
  • This spiral spring is according to a first embodiment of the invention. It comprises a mounting hub 1 designed to be threaded and fixed on a support shaft of a rocker arm.
  • the spiral spring of the figure 1 further comprises an elastically flexible strand 2 which extends in a spiral line l (see figure 2 ), in a plane P, around the mounting hub 1, and which has the shape of a blade in the example shown.
  • One of the two ends of the elastically flexible strand 2 is integral with the mounting hub 1.
  • the other end of the elastically flexible strand 2 is a free end, intended to be fixed to a bridge generally called cock.
  • the figure 2 represents a portion of the elastically flexible strand 2 which, over all or part of its length, consists of a succession of slices of different materials. More precisely, these slices are either portions 3 made of monocrystalline silicon A, or separation layers 4 made of silicon oxide B, or portions 5 of polycrystalline silicon C.
  • the silicon oxide B constituting the separation layers 4 is more precisely amorphous silicon oxide (SiO 2 ).
  • each portion 5 of polycrystalline silicon C is between two separation layers 4, each of which separates it from a portion 3 of monocrystalline silicon A.
  • the thermal coefficient of Young's modulus of monocrystalline silicon A and that of polycrystalline silicon C are both negative, whereas the thermal coefficient of the Young's modulus of silicon oxide is positive.
  • the presence of silicon oxide within the silicon produces a thermal compensation for the bending stiffness of the elastically flexible strand. This thermal compensation can be adjusted so that the bending stiffness of the elastically flexible strand is very little dependent or independent of temperature variations.
  • This sequence S is a succession in an order which, along the elastically flexible strand 2 is: portion 3 made of monocrystalline silicon, then separation layer 4 of silicon oxide, then portion 5 of polycrystalline silicon, and then separation layer 4 of silicon oxide.
  • the pitch between the separation layers 4, that is to say the spacing of two consecutive separation layers 4 is the same over the entire length elastically flexible strand 2.
  • the area of the straight section E of the elastically flexible strand 2 intervenes on the bending stiffness of this elastically flexible strand 2, but not on the thermocompensation. It is therefore possible locally to modify the area of the straight section E of the elastically flexible strand 2 in order to locally modify the bending stiffness of this elastically flexible strand 2 without this having any influence on the local thermocompensation applying to this flexural stiffness. , which is advantageous.
  • the figure 3 represents a section of an elastically flexible strand 102 forming part of a thermocompensated spiral spring which is according to a second embodiment of the invention and which may have the general shape of the spiral spring shown in FIG. figure 1 .
  • This elastically flexible strand 102 comprises a portion 3 made of monocrystalline silicon A and a portion 5 of polycrystalline silicon C, between which there is a separation layer 4 made of silicon oxide B.
  • the separating layer 4 extends over substantially the entire length of the elastically flexible strand 2, but could also extend over only a portion of this length. It extends along a fluted surface and its longitudinal section consists of a succession of crenellations. In this, the separation layer 4 forms a periodic pattern which is repeated along the elastically flexible strand 102. This pattern can be repeated while remaining identical to itself wherever the separation layer 4 is present. in the elastically flexible strand 102.
  • the pattern formed by the separating layer 4 may also be modified one or more times along the elastically flexible strand 102, so as to modify the flexural stiffness of the elastically flexible strand 102 one or more times. along this one. In particular, this pattern may be expanded longitudinally at a portion of the elastically flexible strand 102 relative to another portion of this elastically flexible strand.
  • the separation layer 4 visible at the figure 3 comprises a plurality of segments 7 not parallel to the spiral line l along which the elastically flexible strand 102 extends.
  • the number of segments 7 per millimeter of elastically flexible strand may be modified one or more times along the elastically flexible strand 102 to modify one or more times the bending stiffness of this elastically flexible strand 102 therealong.
  • the straight section E of the elastically flexible strand 102 also intervenes on the bending stiffness of this elastically flexible strand 102, as well as on the thermocompensation applied to this flexural stiffness. It is therefore possible to play both on the straight section E of the elastically flexible strand 102 and on the number of segments 7 per millimeter of elastically flexible strand in order to locally modify the bending stiffness of the elastically flexible strand 102 by not modifying or weakly local thermocompensation applying to this stiffness, which is advantageous.
  • the separating layer 4 made of silicon oxide B modifies the stiffness in flexion of the elastically flexible strand 102 and the thermocompensation applying to this stiffness and that, without being locally, the strand elastically flexible 102 is thermally compensated globally at the desired level, taking into account the accumulation of local thermocompensations.
  • the silicon oxide B separating layer 4 of the elastically flexible strand 102 extends along a direct line d and parallel to a generator cutting the plane P in which the elastically flexible strand 102 extends.
  • the terms "guideline” and “Generator” have the meaning given to them in mathematics, especially to describe cylindrical surfaces.
  • the generator so is a right.
  • it is perpendicular or substantially perpendicular to the plane P.
  • each separation layer 4 made of silicon oxide B of the other embodiments of the invention proposed in the present description also applies to the or each separation layer 4 made of silicon oxide B of the other embodiments of the invention proposed in the present description.
  • each separating layer 4 made of silicon oxide B of the elastically flexible strand 2 also extends along a guide line and parallel to a generatrix intersecting the plane P.
  • spiral springs according to the embodiments of the invention proposed in the present description can be made by implementing a manufacturing method according to the invention. An embodiment of this manufacturing method will now be described in the case where it is used to manufacture the spiral spring whose elastically flexible strand 102 is partially represented in FIG. figure 3 .
  • the spiral spring whose elastically flexible strand 102 is partially represented at the figure 3 is made from a wafer 10 made of monocrystalline silicon A.
  • this wafer 10 is part of a wafer 11 silicon-oxide-silicon type, the acronym "SOI" also being commonly used to designate type of wafer.
  • an etching mask 12 is formed by depositing a layer of photoresist, then solubilizing and then removing portions of this photoresist layer.
  • the state which results from the deposition of the etching mask 12 is that represented in FIG. Figure 4A .
  • the wafer 10 is etched with the aid of the etching mask 12 so as to form a hole 13 in this wafer 10 throughout its entire thickness.
  • the deep reactive ion etching also called engraving DRIE (acronym for the English name " Deep reactive ion etching ").
  • the contours of the hole 13 are those of the portion 5 in the finished part, at least on the side of what is intended to form the portion 4.
  • the separation layer 4 of silicon oxide B is created at the uncovered portion of the surface of the wafer 10 and, in particular, at the wall of the hole 13.
  • the separation layer 4 may in particular be made by thermal oxidation, in an oven where silicon oxide is formed from silicon.
  • the thermal oxidation can be a wet oxidation obtained in the presence of water vapor in the oven or a dry oxidation obtained in the presence of oxygen in the furnace.
  • the separation layer 4 can also be deposited, for example by means of a physical vapor deposition.
  • the hole 13 is filled with polycrystalline silicon C.
  • a directional deposit which may be a physical vapor deposition also called PVD deposition (acronym for the English name " Physical Vapor Deposition "). or a chemical vapor deposition also called CVD deposit (acronym for the English name “ Chemical Vapor Deposition ").
  • a treatment is carried out which, according to the current results, reinforces the mechanical bond between the silicon oxide B of the separation layer 4 and the polycrystalline silicon C of the portion 5.
  • This treatment consists in subjecting the together, i.e. wafer 10 with silicon oxide B and with polycrystalline silicon C in hole 13, at conditions that could be used to produce thermal oxidation of silicon. These conditions may be identical to conditions used to effect wet thermal oxidation or they may be identical to conditions used to effect dry thermal oxidation.
  • polishing can be a chemical mechanical planarization also called CMP process (acronym for the English name " Chemical Mechanical Planarization ”) .
  • CMP process an English name " Chemical Mechanical Planarization ”
  • This polishing removes the excess of polycrystalline silicon C, as well as the silicon oxide B at one of the main faces of the wafer 10.
  • the trimming consists of cutting the spiral spring and is made by means of a not shown etching mask and a DRIE etching.
  • the spiral spring is completely cut away except at a possible attachment which unites it to what remains of the wafer 10. This attachment will be broken at the very end of the manufacturing process.
  • the residual portion 4 'of the silicon oxide layer B is preferably removed by wet etching.
  • the filling material of the hole 13 is a material that can not be etched by means of a DRIE etching.
  • the shaping of the spiral spring can be done in a contour passing through this polycrystalline silicon C, by DRIE etching and without wet chemical etching.
  • the spiral spring is released. This consists in locally removing or totally removing, for example by etching, the part 15 of the wafer 11, that is to say the part which forms a support for the wafer 10.
  • the one or one of the post-treatments applied to the spiral spring may be a thermal oxidation producing a surface layer of silicon oxide B.
  • this surface layer of silicon oxide B is preferably taken into account. in the calculation of the overall thermal compensation applying to the bending stiffness of the elastically flexible strand.
  • the method described above can be applied to realize simultaneously several spiral springs from a single wafer 11. Moreover, it may comprise one or more other steps in addition to those which have been explained above.
  • a very great precision on the thickness of the separation layer 4 in silicon oxide B can be obtained when the spiral spring is made by implementing the manufacturing method which has just been described with reference to the Figures 4A to 4F .
  • the possibility of obtaining such a precision on the thickness of the separation layer 4 in silicon oxide constitutes an advantage all the more notable that this thickness has a direct influence on the accuracy of the thermal compensation obtained and on the accuracy of the stiffness in bending of the elastically flexible strand.
  • the polycrystalline silicon portion 5 is firmly bonded to the separation layer 4 in silicon oxide, which is a result contrary to a technical prejudice very widely or even unanimously shared in the field of spiral springs. in silicon.
  • the Figures 5 and 6 each represent one of two sections of the same elastically flexible strand 202 forming part of a spiral spring according to a third embodiment of the invention.
  • the separating layers 4 of the elastically flexible strand 202 are non-parallel to the spiral line l along which this elastically flexible strand 202 extends. As a result, the number of separating layers 4 per millimeter of elastically flexible strand can be modified .
  • the bending stiffness of the elastically flexible strand 202 may be modified one or more times along this elastically flexible strand 202.
  • the number of separating layers 4 per millimeter of elastically flexible strand is modified at least once along the elastically flexible strand 202. In this alone, the elastically flexible strand 202 is distinguished from the elastically flexible strand 2.
  • the section represented at figure 5 is shifted from the section shown at figure 6 along the elastically flexible strand 202. From a comparison of Figures 5 and 6 , it appears that the number of separation layers 4 per millimeter of elastically flexible strand is modified between the section shown in FIG. figure 5 and the one represented at figure 6 . As a result, the bending stiffness of the elastically flexible strand 202 is varied between the section shown in FIG. figure 5 and the section shown in figure 6 .
  • the elastically flexible strand 202 is heat-compensated to the desired level. To obtain this result, consider the entire length of the elastically flexible strand 202 and make sure that insufficient local thermocompensations and those in excess compensate themselves over this length.
  • the elastically flexible strand of a thermocompensated spiral spring according to the invention may be at least partially covered by at least one silicon oxide coating layer.
  • An advantage of the invention is that a spiral spring according to the invention can be thermocompensated to the desired level without being covered with a layer of matte silicon oxide, dark and therefore unsightly, or that this spiral spring can be thermocompensated to the desired level and be covered with a layer of silicon oxide sufficiently thin so as not to substantially affect the aesthetics of the spiral spring.
  • the two coating layers 320 of silicon oxide B may or may not be sufficiently thin to substantially affect the aesthetics of the spiral spring.
  • the figure 8 represents a portion of the elastically flexible strand 102 described above.
  • each of the Figures 9 to 12 represents a section of an elastically flexible strand 402, 502 or 602 forming part of a thermocompensated spiral spring according to the invention.
  • the silicon oxide B separating layer 4 extends along a grooved surface, forms a periodic pattern and comprises segments 7 whose linear density can be modified one or more times over the along the elastically flexible strand.
  • the elastically flexible strand 402 partially shown in FIG. figure 9 is distinguished from the elastically flexible strand 102 in that its separating layer 4 extends along a sinuous guideline with curved elbows between the segments 7.
  • the elastically flexible strand 502 partially shown in FIG. figure 10 is distinguished from the elastically flexible strand 102 in that its separating layer 4 extends along a sawtooth guideline.
  • the elastically flexible strand 102 has a cross-section which is modified at least once. On the figure 11 it is more precisely the area of this cross section that is modified due to a widening of the elastically flexible strand 502.
  • the elastically flexible strand 602 partially shown in FIG. figure 11 is distinguished from the elastically flexible strand 102 in that the successive slots formed by its separation layer 4 each have the form of a dovetail contour, which has the advantage of strengthening the subjection of the portion 3, the layer 4 and the portion 5 to each other, by the presence of undercut areas, and thus increase the strength of the elastically flexible strand 602.
  • the periodic pattern of the separating layer 4 is longitudinally expanded at a portion of the elastically flexible strand 102, relative to another portion of this strand elastically. flexible.
  • the period of the periodic pattern and thus the number of segments 7 per millimeter of elastically flexible strand are modified at least once along the elastically flexible strand 102, which is the case at the figure 13 .
  • the bending stiffness thereof is changed at least once.
  • the separation layer or the separation layers 4 may have other forms than those previously proposed.
  • a separation layer 4 of silicon oxide B may, over part of its length, form a certain periodic pattern, for example by being as shown in FIG. figure 8 , and, on another part of its length, to form another periodic pattern, for example by being as represented on one of the Figures 9, 10 and 12 .
  • the material of which the or each portion 5 is made may not be polycrystalline silicon.
  • the or each portion 5 may be made of any suitable material, in particular any suitable material which can be deposited in thick layer, especially by PVD or by CVD.
  • the or each portion 5 may be made of SiC, Al, Al 2 O 3 , Ti, TiO 2 , Ti 2 O 3 , Au, W, WO 2 , WO 3 , silumin (aluminum-silicon alloy, for example at 1% or 2% or 4% silicon), Si 3 N 4 , AlN, BeO, ZrO 2 , NB, MgO.

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Claims (17)

  1. Thermokompensierte Spiralfeder für einen mechanischen Uhrenoszillator, umfassend einen elastisch flexiblen Strang (2; 102; 202; 302; 402; 502; 602), welcher sich in einer spiralförmigen Linie (ℓ) erstreckt, wobei der elastisch flexible Strang (2; 102; 202; 302; 402; 502; 602) umfasst:
    - mindestens einen Abschnitt (3) in einem ersten Material, nämlich monokristallines Silizium (A), und
    - mindestens eine Trennschicht (4) in einem zweiten Material, nämlich Siliziumoxid (B),
    wobei der Abschnitt (3) in monokristallinem Silizium (A) mechanisch an der Trennschicht (4) in Siliziumoxid (B) gebunden ist,
    dadurch gekennzeichnet, dass mindestens ein Abschnitt (5) in einem dritten Material (C) umfasst ist, welches sich von monokristallinem Silizium (A) und Siliziumoxid (B) unterscheidet, und dadurch dass die Trennschicht (4) in Siliziumoxid (B) den Abschnitt (3) in monokristallinem Silizium (A) von dem Abschnitt (5) in dem dritten Material (C) trennt, wobei dieser Abschnitt in dem dritten Material (C) mechanisch an der Trennschicht (4) in Siliziumoxid (B) gebunden ist.
  2. Spiralfeder gemäss Anspruch 1, dadurch gekennzeichnet, dass das dritte Material aus polykristallinem Silizium (C) ist.
  3. Spiralfeder gemäss einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Trennschicht (4) in Siliziumoxid (B) oder eine Vielzahl von Trennschichten (4) in Siliziumoxid (B), welche jede einen Abschnitt (3) in monokristallinem Silizium (A) und einen Abschnitt (5) in dem dritten Material (C) voneinander trennt, und welche mechanisch an diese Abschnitte (3, 5) gebunden ist, eine Vielzahl von Segmenten (4; 7) umfasst, welche nicht parallel zu der spiralförmigen Linie (ℓ) sind, wobei die Segmente (4; 7) entlang des elastisch flexiblen Strangs (2; 102; 202; 302; 402; 502; 602) zueinander versetzt sind.
  4. Spiralfeder gemäss Anspruch 3, dadurch gekennzeichnet, dass die Anzahl der Segmente (4; 7) pro Millimeter des elastisch flexiblen Strangs zumindest einmal entlang des elastisch flexiblen Strangs (2; 102; 202; 302; 402; 502; 602) wechselt.
  5. Spiralfeder gemäss einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der elastisch flexible Strang (2; 102; 202; 302; 402; 502; 602) eine Biegesteifheit hat und die Trennschicht (4) in Siliziumoxid (B) oder eine Vielzahl von Trennschichten (4) in Siliziumoxid (B), welche jede einen Abschnitt (3) in monokristallinem Silizium (A) und einen Abschnitt (5) in dem dritten Material (C) voneinander trennt, und welche mechanisch an die Abschnitte (3; 5) gebunden ist, mindestens einmal entlang des elastisch flexiblen Strangs (2; 102; 202; 303; 402; 502; 602) wechselt.
  6. Spiralfeder gemäss einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der elastisch flexible Strang (2; 102; 202; 302; 402; 502; 602) eine Biegesteifheit aufweist und einen geraden Abschnitt (E), welcher mindestens einmal entlang des elastisch flexiblen Strangs (2; 102; 202; 302; 402; 502; 602) in einer Weise wechselt, dass mindestens einmal die Biegesteifheit entlang des elastisch flexiblen Strangs (2; 102; 202; 302; 402; 502; 602) wechselt.
  7. Spiralfeder gemäss einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der elastisch flexible Strang (2; 202) eine Wiederholung einer Sequenz (S) aufweist, welche sich selbst entlang des elastisch flexiblen Strangs (2; 202) wiederholt, wobei die Sequenz (S) eine Abfolge gemäss einer Reihenfolge, welche entlang des elastisch flexiblen Strangs (2; 202) ist: Abschnitt (3) in monokristallinem Silizium (A), dann Trennschicht (4) in Siliziumoxid (B), dann Abschnitt (5) in dem dritten Material (C), dann Trennschicht (4) in Siliziumoxid (B).
  8. Spiralfeder gemäss Anspruch 7, dadurch gekennzeichnet, dass die Sequenz (S) sich über eine Distanz entlang des elastisch flexiblen Strangs (2; 202) erstreckt, wobei die Distanz mindestens einmal entlang des elastisch flexiblen Strangs (2; 202) wechselt.
  9. Spiralfeder gemäss einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass sich die Trennschicht (4) in Siliziumoxid (B) entlang einer Oberfläche erstreckt, welche mindestens an einem Teil der Länge des elastisch flexiblen Strangs (102; 302; 402; 502; 602) profiliert ist.
  10. Spiralfeder gemäss einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass sich die Trennschicht (4) in Siliziumoxid (B) entlang einer Leitlinie (d) erstreckt und parallel zu einer Generatix (
    Figure imgb0004
    ), welche eine Ebene (P) schneidet, in welcher sich der elastisch flexible Strang (2; 102; 202; 302; 402; 502; 602) erstreckt.
  11. Herstellungsverfahren für eine thermokompensierte Spiralfeder gemäss einem der vorhergehenden Ansprüche, umfassend die Schritte, in welchen:
    a) eine Öffnung (13) in einem Plättchen (10) erzeugt wird, gefertigt aus monokristallinem Silizium (A),
    b) die Trennschicht (4) in Siliziumoxid (B) mindestens an der Wandung der Öffnung (13) erzeugt wird, derart dass das monokristalline Silizium (A) mechanisch an der Trennschicht (4) in Siliziumoxid (B) gebunden ist,
    c) die Öffnung (13) mit dem dritten Material (C) gefüllt wird, derart dass das dritte Material (C) mechanisch an der Trennschicht (4) in Siliziumoxid (B) gebunden ist und derart dass die Trennschicht (4) in Siliziumoxid (B) das monokristalline Silizium (A) von dem dritten Material (C) trennt,
    d) in dem gemäss den Schritten a) bis c) geänderten Plättchen (10) die Spiralfeder geschnitten wird, umfassend seinen elastisch flexiblen Strang (2; 102; 202; 302; 402; 502; 602), derart dass sich der elastisch flexible Strang (2; 102; 202; 302; 402; 502; 602) entlang der spiralförmigen Linie (ℓ) erstreckt und mindestens den Abschnitt (3) in monokristallinem Silizium (A), mindestens die Trennschicht (4) in Siliziumoxid (B) und mindestens den Abschnitt (5) in dem dritten Material (C) umfasst.
  12. Herstellungsverfahren nach Anspruch 11, umfassend einen Schritt, welcher nach Schritt c) erfolgt und in dem das Plättchen (10) mit einer Trennschicht (4) und dem dritten Material (C) versehen wird oder die Spiralfeder Bedingungen unterworfen wird, welche die gleichen Bedingungen sind, die eingesetzt werden, um eine thermische Oxidation des Siliziums zu erreichen.
  13. Herstellungsverfahren gemäss einem der Ansprüche 11 und 12, wobei mindestens während Schritten a) bis c) das Plättchen (10) einen Teil eines Wafers (11) bildet, wobei das Plättchen (10) eine erste Hauptfläche, die mit einem Träger (15) vereint ist und eine zweiten Hauptfläche umfasst, der ersten Hauptfläche gegenüberliegend, wobei das Herstellungsverfahren einen Schritt umfasst, welcher nach Schritt c) erfolgt und in dem die zweite Hauptfläche des Plättchens (10) poliert wird.
  14. Herstellungsverfahren nach einem der Ansprüche 11 bis 13, wobei mindestens einer der Schritte a) und d) durch Ätzen erreicht wird.
  15. Herstellungsverfahren nach einem der Ansprüche 11 bis 14, wobei in Schritt b) die Trennschicht (4) in Siliziumoxid (B) durch thermische Oxidation erzeugt wird.
  16. Herstellungsverfahren nach einem der Ansprüche 11 bis 15, wobei mindestens während Schritten a) bis c) das Plättchen (10) Teil eines Wafers (11) bildet, bei welchem eine Hauptfläche des Plättchens (10) mit einem Träger (15) vereint ist, wobei das Herstellungsverfahren einen Schritt umfasst, welcher nach Schritt c) erfolgt und in dem die Spiralfeder von dem Träger (15) befreit wird.
  17. Herstellungsverfahren nach einem der Ansprüche 11 bis 16, umfassend mindestens eine Nachbehandlung, welche nach Schritt d) erfolgt und welche ausgewählt ist aus einer Nachbehandlung, um die Schockresistenz der Spiralfeder zu erhöhen, einer Nachbehandlung, um die Leitfähigkeit der Spiralfeder zu erhöhen und einer Nachbehandlung, um eine Biegesteifigkeit des elastisch flexiblen Strangs zu ändern.
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EP3285124B1 (de) * 2016-08-17 2020-12-16 Tronic's Microsystems S.A Mechanischer resonator für uhrwerk, sowie herstellungsverfahren eines solchen resonators
CH713151B1 (fr) * 2016-11-23 2020-09-30 Swatch Group Res & Dev Ltd Lame flexible pour l'horlogerie, et procédé de fabrication.
EP3534222A1 (de) * 2018-03-01 2019-09-04 Rolex Sa Herstellungsverfahren eines thermokompensierten oszillators
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