EP2579104B1 - Herstellungsverfahren eines Verbunduhrwerks - Google Patents
Herstellungsverfahren eines Verbunduhrwerks Download PDFInfo
- Publication number
- EP2579104B1 EP2579104B1 EP11191327.3A EP11191327A EP2579104B1 EP 2579104 B1 EP2579104 B1 EP 2579104B1 EP 11191327 A EP11191327 A EP 11191327A EP 2579104 B1 EP2579104 B1 EP 2579104B1
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- European Patent Office
- Prior art keywords
- layer
- metal
- silicon
- steps
- substrate
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 30
- 239000002131 composite material Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 50
- 239000010703 silicon Substances 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 23
- 230000000873 masking effect Effects 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 2
- 239000001995 intermetallic alloy Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 238000003801 milling Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002905 metal composite material Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B13/00—Gearwork
- G04B13/02—Wheels; Pinions; Spindles; Pivots
- G04B13/021—Wheels; Pinions; Spindles; Pivots elastic fitting with a spindle, axis or shaft
- G04B13/022—Wheels; Pinions; Spindles; Pivots elastic fitting with a spindle, axis or shaft with parts made of hard material, e.g. silicon, diamond, sapphire, quartz and the like
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B15/00—Escapements
- G04B15/14—Component parts or constructional details, e.g. construction of the lever or the escape wheel
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/04—Oscillators acting by spring tension
- G04B17/06—Oscillators with hairsprings, e.g. balance
- G04B17/063—Balance construction
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/20—Compensation of mechanisms for stabilising frequency
- G04B17/22—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature
- G04B17/227—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature composition and manufacture of the material used
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B29/00—Frameworks
- G04B29/02—Plates; Bridges; Cocks
- G04B29/027—Materials and manufacturing
Definitions
- the present invention relates to the field of mechanical watchmaking. It relates, more particularly, to a method of producing a composite timepiece comprising at least a first metal layer and a second silicon-based layer.
- silicon-metal composite parts In some applications, it is sought to produce silicon-metal composite parts. This may be useful for giving sufficient weight to a rocker made of silicon, or to overcome the mechanical weaknesses of a silicon-based part, related to the lack of plastic domain of this type of material, in particular to ensure fixing a silicon-based part to another element.
- techniques such as galvanic growth or vapor phase metallization are used.
- the achievable thicknesses are limited and the reproducibility of these techniques is not suitable for industrial production of very precise parts.
- the deep etching techniques DRIE on the one hand and LIGA on the other hand are both complex to implement and have a relatively large number of steps, so that combining these two techniques is relatively complicated.
- Examples of silicon-metal composite parts are disclosed in the documents EP 2 154 582 and EP 2 104 005 : the document EP 2 154 582 discloses an assembly formed of a metal pinion and a silicon gear comprising an impression of the pinion toothing in the surface of the toothed wheel, while the document EP 2 104 005 discloses a composite silicon-metal balance.
- the object of the present invention is to provide a method for producing a silicon-metal composite part in an industrializable manner.
- the invention relates to a method for producing a composite part, as defined in the claims.
- the present invention relates to a method of producing a composite timepiece comprising a first metal layer and a second silicon-based layer.
- a first part defining at least a portion of the first metal layer is produced.
- One or more conductive layers 2 are then deposited by evaporation or spraying.
- the metals or alloys used can be typically titanium, chromium, tantalum, gold, copper, nickel, platinum, silver, a gold-tin alloy ...
- this metal growth 4 defining all or part of the first metal layer.
- a layer of 5 to 1000 ⁇ m of photoresist 3 is formed on the conductive layer 2 by photolithography in order to obtain cavities in the resin, the cavities making the conductive layer 2 apparent.
- Photolithographic techniques including the steps of masking, insolation and dissolution being well known to those skilled in the art, they will not be described in more detail.
- the free surface of the metal growth 4 is then laid flat, typically by surface abrasion, such as polishing, lapping or grinding.
- surface abrasion such as polishing, lapping or grinding.
- the resin is polished simultaneously. This step is important for the rest of the process. Indeed, a surface resulting from a galvanic growth is, a priori, not perfectly flat and is therefore not a good basis for a connection with another room.
- the surface abrasion allows a grinding of the surface of the metallic growth 4.
- the photoresist 3 is removed dry, plasma type, or wet, by reaction in a suitable chemical solution. These steps are also well known to those skilled in the art and are therefore not described further. It will be noted that the surface abrasion step can also be carried out after the removal of the photoresist 3.
- the metal growth 4 thus defines one or more metal parts disposed on and secured to the first substrate 1, this or these metal parts forming what will be all or part of the metal layer of the composite part.
- the steps of the LIGA process for structuring photoresist 3 and galvanic growth can be repeated so as to obtain a metal growth 4 at several levels. If necessary, an intermediate metal layer of attachment is deposited on the surface of a previous level, before depositing and structuring the resin. Each level is thus built on the previous one.
- a second part defining the second silicon-based layer is produced by performing the following steps, illustrated with reference to the Figures 2a to 2c .
- a second substrate 10 based on silicon is provided. It may be a silicon wafer or an SOI type substrate. The surface of the second substrate can be treated or not. The treatments that can be applied to a silicon surface are, for example, heat treatments, oxidations or nitriding.
- photolithographic masking 12 is carried out on at least one face of this second substrate 10.
- This photolithographic masking 12 is produced by depositing a layer of photosensitive resin of 1 to 100 ⁇ m on the relevant face of the second substrate. A mask is then deposited on said layer of photoresist and the resin is insulated through the mask by exposure to UV rays. Finally, the insolated resin is removed chemically, in order to obtain cavities in the resin layer and thus define the photolithographic masking 12.
- These masking, insolation and dissolution steps are well known to those skilled in the art they will not be described in more detail. If necessary, an intermediate mask of silicon oxide may be used.
- photolithographic masking by plasma or wet dry type is removed by reaction in a suitable chemical solution.
- Etching thus makes it possible to obtain a silicon-based part etched in the second substrate 10, this silicon-based part forming what will be the silicon-based layer of the composite part.
- the etching can be performed on both sides of the second substrate. Moreover, by performing several photolithographic masking, it is also possible to perform multilevel etchings.
- the first and second parts are respectively positioned so as to bring into contact, on the one hand, the metal part (s) integral with the first substrate (1) and intended to form the metal layer of the composite part and, on the other hand, the the silicon-based parts integral with the second substrate 10 and intended to form the silicon-based layer of the composite part ( figure 3a ).
- indexing elements may be provided on each of the parts, so that they are perfectly positioned one with reference to the other, depending on the composite part that is desired.
- the metal interface layer 16 is made of the same metal as the galvanic growth 4. figure 3b illustrates this situation.
- the assembly operation is then between two metal layers, by means of a thermo-compression welding, applying a temperature between 100 and 600 ° C and a pressure between 0.5 and 10 bar.
- the metal interface layer 16 deposited on the second substrate will then form, with the metal growth 4 of the first part, the assembly of said first metal layer of the composite part.
- the composite part is released by selectively removing the first substrate 1 ( figure 3c ).
- the metal growth 4 deposited on it remains welded to the second piece. This elimination is also carried out by dry etching plasma type, or wet by reaction in a suitable chemical solution or by mechanical means.
- the figure 3d represents the same step in the case where a metal interface layer 16 has been used. It will be noted that the distinctive hatches used in the figure are only there to clarify the diagrams but have no physical significance. Indeed, after thermo-compression welding, there is no discontinuity between the interface metal layer 16 and the galvanic growth 4.
- the method which has just been described makes it possible to produce in an industrially manner, that is to say accurate and reproducible, composite parts, comprising a metal layer and a silicon-based layer, both of which may present complex three-dimensional shapes.
- This method can advantageously be used to produce parts watchmaking, in particular parts where the silicon is advantageous, but should preferably be combined with metal parts to compensate for its fragility or its low density.
- FIG. 4a, 4b and 4c An example of application relates to a timepiece 20 intended to be mounted on an axis ( Figures 4a, 4b and 4c ). Typically, it may be a wheel or a pinion. It is known that fixing such a mobile silicon on an axis is problematic, since the silicon does not withstand the stresses applied during a traditional hunting. Thus, the second layer 22 made of silicon has a hole sized to allow the free passage of the axis. It therefore does not undergo mechanical stress during assembly on the axis.
- the first metal layer 24 comprises, it, a hole sized to cooperate rigidly with the axis.
- the figure 4b shows a variant of the timepiece 20, in which the hub of the silicon-based part comprises a multilevel etching, defining, on the one hand, a housing for the metal layer 24 and, on the other hand, a structure elastic at the hub allowing centering on the axis.
- the elastic structure can be deformed and allows to center the composite part on the axis. Fixing is performed on the metal layer 24.
- the figure 4c proposes a further variant of the timepiece 20, in which the second layer 22 made of silicon comprises, on either side of its hub, a metal layer 24.
- the hole of the hub of the second layer 22 is dimensioned so that the latter does not undergo stress.
- each of the metal layers 24 has a hole sized to cooperate rigidly with the axis. The axis is thus guided on each side of the silicon-based part.
- the holes of the first and second layers are arranged coaxially.
- the metal layer 24 or the metal layers 24 which undergo / undergo the constraints related to the fixing which can be carried out by driving, riveting, shrinking, brazing, welding or other processes.
- known assembly The method allows great accuracy and remarkable efficiency in the arrangement of the metal layer at the hub of the silicon-based layer.
- a similar construction may more generally be used for different cases in which a silicon-based part is to be assembled to another part. It is possible to mention the assembly of a silicon bridge on a platinum, the driving of a stone in a silicon bridge, the fixing of a metal dart on a silicon anchor, the assembly of a ferrule or of a stud on a silicon-based hairspring, the assembly of a return spring or a pawl on a silicon wheel.
- a second application of the method according to the invention consists in producing metal inertial masses 34 on a rocker 32 made of silicon.
- the invention can be applied to any other component requiring the addition of point masses or unbalance.
- a third application 40 of the method according to the invention consists in producing metal decorations on a silicon-based part 42.
- the production of the first metal layer 44 by LIGA technology makes it possible to obtain particularly complex shapes that can provide decorations. .
- the method according to the invention thus offers the possibility of producing a composite part, having, for both its metal part and its silicon-based part, complex shapes, but nevertheless extremely precise. Thanks to the fact that the pieces are made independently of each other, the realization of each of them can be done without altering the other and without being embarrassed by it.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Claims (11)
- Verfahren zur Herstellung eines Verbunduhrwerks, das eine erste Metallschicht und eine zweite Schicht auf Siliziumbasis umfasst, das die folgenden Schritte umfasst:A. Herstellen eines ersten Teils, das mindestens einen Abschnitt der ersten Metallschicht definiert, durch Absolvieren der folgenden Schritte:a. Bereitstellen eines ersten Substrats (1) auf der Basis von Silizium, Glas oder aus Metall,b. Durchführen eines Metallwachstums (4) durch LIGA-Technologie auf diesem ersten Substrat, wobei das Wachstum den mindestens einen Abschnitt der ersten Schicht definiert,B. Herstellen eines zweiten Teils, das die zweite Schicht auf Siliziumbasis definiert, durch Absolvieren der folgenden Schritte:a. Bereitstellen eines zweiten Substrats (10) auf Siliziumbasis,b. Durchführen einer photolithographische Maskierung (12) auf mindestens einer Seite dieses zweiten Substrats, undc. Durchführen einer DRIE-Gravur auf Ebene der durch die photolithographische Maskierung frei gelassenen Flächen, danachd. Entfernen der photolithographischen Maskierung,C. Montage des Verbundteils durch Durchführung der folgenden Schritte:a. Positionieren jeweils des ersten und zweiten Teils derart, dass der mindestens eine Abschnitt der ersten Metallschicht und die zweite Schicht auf Siliziumbasis in Kontakt kommen,b. Verschweißen des ersten und zweiten Teils durch Anwenden eines Drucks und/oder einer Temperatur, die ein Schweißen durch thermische Kompression oder die Bildung einer metallübergreifenden Legierung und die Ausbildung einer Verbindung zwischen dem ersten und zweiten Teil erlaubt,c. Freisetzen des Verbundteils durch Entfernen des ersten Substrats.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass der Schritt B ferner den folgenden Vorgang aufweist, der nach dem Entfernen der Maskierung durchgeführt wird:e. Aufbringen einer Schnittstellen-Metallschicht (16) auf Abschnitte, die mit dem Abschnitt der ersten Metallschicht zur Bildung der gemeinsamen ersten Schicht bestimmt sind.
- Verfahren nach Anspruch 2, dadurch gekennzeichnet, dass das Aufbringen der Schnittstellen-Metallschicht (16) durch Aufbringen einer oder mehrerer Schichten durch Verdampfen oder Zerstäuben durchgeführt wird.
- Verfahren nach Anspruch 3, dadurch gekennzeichnet, dass die Schnittstellen-Metallschicht (16) auf der Basis von Titan, Chrom, Tantal, Gold, Kupfer, Nickel, Platin, Silber oder einer Gold-Zinn-Legierung hergestellt ist.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass der Schritt B ferner einen Herstellungsvorgang einer Schnittstellenmaske aus Siliziumoxid aufweist.
- Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass der Schritt A.b. durchgeführt wird durch:- A.b.1 Strukturieren einer Schicht von 5 bis 1000 µm eines photosensiblen Harzes (3) durch Photolithographie, um Hohlräume in dem Harz zu erhalten,- A.b.2 Durchführen eines galvanischen Metallwachstums in den Hohlräumen, und- A.b.3 Entfernen des Harzes,wobei der Schritt A.b. ferner einen Abflachungsschritt der erhaltenen Fläche aufweist, der entweder vor oder nach dem Schritt A.b.3 durchgeführt wird.
- Verfahren nach Anspruch 6, dadurch gekennzeichnet, dass das Abflachen der erhaltenen Fläche durch Polieren, Läppen oder Schleifen durchgeführt wird.
- Verfahren nach einem der Ansprüche 6 und 7, dadurch gekennzeichnet, dass die Schritte A.b.1 bis A.b.2 derart wiederholt werden, dass man eine Metallschicht mit mehreren Ebenen erhält.
- Verfahren nach Anspruch 8, dadurch gekennzeichnet, dass zwischen zwei Schrittzyklen A.b.1 bis A.b.2 eine Schnittstellen-Haftungs-Metallschicht aufgebracht wird.
- Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass der Schritt B.c. der DRIE-Gravur auf verschiedenen Ebenen durchgeführt wird.
- Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Schritte B.b., B.c. und B.d. auf zwei gegenüberliegenden Seiten des zweiten Teils durchgeführt werden.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH16482011 | 2011-10-07 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2579104A2 EP2579104A2 (de) | 2013-04-10 |
EP2579104A3 EP2579104A3 (de) | 2013-08-21 |
EP2579104B1 true EP2579104B1 (de) | 2014-06-25 |
Family
ID=45093506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11191327.3A Active EP2579104B1 (de) | 2011-10-07 | 2011-11-30 | Herstellungsverfahren eines Verbunduhrwerks |
Country Status (1)
Country | Link |
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EP (1) | EP2579104B1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CH709729A2 (fr) * | 2014-06-03 | 2015-12-15 | Swatch Group Res & Dev Ltd | Pièce d'habillage à base de verre photostructurable. |
EP2952977A1 (de) * | 2014-06-03 | 2015-12-09 | Nivarox-FAR S.A. | Uhrkomponente aus geschweißten Materialien |
EP2952976A1 (de) * | 2014-06-03 | 2015-12-09 | The Swatch Group Research and Development Ltd. | Verkleidungselement einer Uhr aus geschweißten Metallen |
EP3457221B1 (de) | 2014-09-16 | 2022-08-10 | Patek Philippe SA Genève | Oszillator einer uhr mit flexiblem zapfen |
EP3078436A1 (de) | 2015-04-10 | 2016-10-12 | Cartier International AG | Verfahren zur herstellung einer uhrkomponente |
EP3106930A1 (de) | 2015-06-16 | 2016-12-21 | Nivarox-FAR S.A. | Herstellungsverfahren, das einen modifizierten maschinenverarbeitungsschritt umfasst |
EP3106928A1 (de) * | 2015-06-16 | 2016-12-21 | Nivarox-FAR S.A. | Herstellungsverfahren, das einen modifizierten automatendreh-schritt umfasst |
EP3141522B1 (de) * | 2015-09-08 | 2018-05-02 | Nivarox-FAR S.A. | Mikromechanisches uhrenbauteil, das eine geschmierte oberfläche umfasst, und herstellungsverfahren eines solchen mikromechanischen uhrenbauteils |
EP3176650B1 (de) * | 2015-12-02 | 2019-02-06 | Nivarox-FAR S.A. | Schutz einer uhrkomponente aus mikro-bearbeitbarem material |
EP3721298A1 (de) * | 2017-12-06 | 2020-10-14 | Patek Philippe SA Genève | Mikromechanische uhrwerkskomponente |
JP7052625B2 (ja) * | 2018-08-02 | 2022-04-12 | セイコーエプソン株式会社 | 時計用部品、ムーブメント、時計および時計用部品の製造方法 |
CH715238A1 (fr) | 2018-08-08 | 2020-02-14 | Csem Centre Suisse Delectronique Et De Microtechnique Sa – Rech Et Developpement | Procédé de formation d’un châton de sertissage sur un substrat non-ductile et objet obtenu selon ce procédé. |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH714952B1 (fr) * | 2007-05-08 | 2019-10-31 | Patek Philippe Sa Geneve | Composant horloger, son procédé de fabrication et application de ce procédé. |
EP2060534A1 (de) * | 2007-11-16 | 2009-05-20 | Nivarox-FAR S.A. | Mikromechanisches Bauteil aus Silizium-Metall-Verbundmaterial und Verfahren zu dessen Herstellung |
ATE474250T1 (de) * | 2008-03-20 | 2010-07-15 | Nivarox Sa | Monoblock-doppelspirale und ihr herstellungsverfahren |
EP2104005A1 (de) * | 2008-03-20 | 2009-09-23 | Nivarox-FAR S.A. | Composite-Unruh und Herstellungsverfahren dafür |
EP2104007A1 (de) * | 2008-03-20 | 2009-09-23 | Nivarox-FAR S.A. | Monoblockspirale aus Material auf Siliziumbasis und ihr Herstellungsverfahren |
EP2105807B1 (de) * | 2008-03-28 | 2015-12-02 | Montres Breguet SA | Monoblockspirale zur Erhöhung der Kurve und ihr Herstellungsverfahren |
EP2154582A1 (de) * | 2008-08-15 | 2010-02-17 | Nivarox-FAR S.A. | Verzahnungverfahren für Uhrwerk |
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2011
- 2011-11-30 EP EP11191327.3A patent/EP2579104B1/de active Active
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EP2579104A3 (de) | 2013-08-21 |
EP2579104A2 (de) | 2013-04-10 |
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