EP2959492B1 - Procédé pour faire fonctionner un changeur de prises en charge avec des éléments de commutation à semi-conducteurs - Google Patents
Procédé pour faire fonctionner un changeur de prises en charge avec des éléments de commutation à semi-conducteurs Download PDFInfo
- Publication number
- EP2959492B1 EP2959492B1 EP14701315.5A EP14701315A EP2959492B1 EP 2959492 B1 EP2959492 B1 EP 2959492B1 EP 14701315 A EP14701315 A EP 14701315A EP 2959492 B1 EP2959492 B1 EP 2959492B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor switching
- winding
- switching element
- sub
- conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
- G05F1/14—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using tap transformers or tap changing inductors as final control devices
- G05F1/16—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using tap transformers or tap changing inductors as final control devices combined with discharge tubes or semiconductor devices
- G05F1/20—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using tap transformers or tap changing inductors as final control devices combined with discharge tubes or semiconductor devices semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
- H01H9/0005—Tap change devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F29/00—Variable transformers or inductances not covered by group H01F21/00
- H01F29/02—Variable transformers or inductances not covered by group H01F21/00 with tappings on coil or winding; with provision for rearrangement or interconnection of windings
- H01F29/04—Variable transformers or inductances not covered by group H01F21/00 with tappings on coil or winding; with provision for rearrangement or interconnection of windings having provision for tap-changing without interrupting the load current
Definitions
- the invention relates to a method for operating an on-load tap changer for voltage regulation with semiconductor switching elements on a control transformer with a control winding.
- a tap changer for voltage regulation with semiconductor switching units known.
- the tap changer has two parallel load branches, wherein in both load branches semiconductor switching units are connected in series. In each case, a semiconductor switching unit of the first load branch and the second load branch are in pairs opposite. In each case alternately between these paired semiconductor switching units, a partial winding and a bridge are connected in parallel between the two load branches.
- the partial windings have different numbers of turns.
- the semiconductor switching units may be formed as thyristor or IGBT pairs. By skillfully interconnecting the semiconductor switching units, the windings can be switched on or off.
- the transmission ratio of the transformer can be adjusted and the secondary-side voltage can thus be regulated.
- IGBT's it is also possible with the help of a pulse width modulation to realize an alternating switching on or off of a partial winding and thereby to implement a fine-level voltage regulation. Constant switching on and off of the semiconductor switching units causes switching losses, and the semiconductor switching units heat up, which places a high demand on the cooling device.
- the object of the invention is to provide an on-load tap changer for voltage regulation with semiconductor switching elements, which has lower switching losses, requires a smaller cooling device and is thus inexpensive and safe.
- the general inventive idea is to use two anti-serially connected IGBTs with inverse diodes as semiconductor switching elements and to take into account the direction of the current and orientation of the voltage at the partial winding in the pulse width modulation, thereby not switching a part of a load branch and thus switching losses avoid.
- the on-load tap changer for voltage regulation has semiconductor switching elements and is arranged on a regulating transformer with regulating windings. This is arranged between a fixed, unregulated part of the control winding and a load derivation. Furthermore, the on-load tap changer has a first load branch and a second load branch arranged parallel thereto, wherein a partial winding is arranged between the load branches.
- the first load branch has a first semiconductor switching element before the partial winding and a second semiconductor switching element after the partial winding.
- the second load branch also has a first semiconductor switching element before the partial winding and a second semiconductor switching element after the partial winding.
- the on-load tap-changer comprises at least one switching module, which comprises the first load branch and the second load branch.
- each semiconductor switching element consists in each case of a first IGBT and a second IGBT which are interconnected antiserially to one another.
- the IGBTs are each provided with an inverse diode such that an anode of an inverse diode having an emitter terminal and a cathode of the inverse diode are connected to a collector terminal of the first IGBT and the second IGBT.
- the semiconductor switching elements of the first load branch and the second load branch are selectively switched off.
- the on-load tap changer comprises a first switching module, a second switching module and a third switching module. They own the Partial windings of each switching module with each other a different turns ratio, for example, 9: 3: 1.
- Another step according to the method of the invention relates to the definition of an active and a passive side of the switching module.
- the semiconductor switching elements are actuated, while on the opposite side they are set in a predetermined switching state.
- the switching states of the semiconductor switching elements of the switching module are determined.
- the IGBTs of the first semiconductor switching elements or second semiconductor switching elements connected to the alternating current-carrying inverse diodes of the respective active side are always blocking.
- the two alternating current-carrying IGBT's of the active side one is always conducting, namely that IGBT whose collector terminal is connected to a negative pole and emitter terminal to a positive pole of the partial winding.
- FIG. 1 is an on-load tap changer 1 for voltage regulation in a control transformer 2 and a control winding 3 shown.
- the on-load tap-changer 1 is arranged between the fixed, unregulated part of the control winding 3 and a load discharge line 4.
- the on-load tap-changer 1 consists of at least one switching module 5.
- the switching module 5 has a first load branch 6 and a second load branch 7 arranged parallel thereto.
- the first and the second load branch 6, 7 of the switching module 5 is conductively connected to one another via a partial winding 8.
- the first load branch 6 has a first semiconductor switching element 61 between the control winding 3 and the partial winding 8 and a second semiconductor switching element 62 after the partial winding 8, ie towards the discharge line 4, on.
- the second load branch 7 likewise has a first semiconductor switching element 71 in front of the partial winding 8 and a second semiconductor switching element 72 after the partial winding 8.
- each of the semiconductor switching elements 61, 62, 71 and 72 consists of a first insulated gate bipolar transistor (IGBT) 11 and a second IGBT 12, which are connected in antiseries.
- the first IGBT 11 and the second IGBT 12 are each provided with an inverse diode 14.
- Each IGBT 11 and 12 has a collector terminal C, an emitter terminal E and a gate G.
- Each of the inverse diodes 14 has its anode connected to the emitter terminal E and the cathode connected to the collector terminal C of FIG IGBT 11 or 12 connected.
- pulse-width modulation is used to clock between two of the three explained positions. If switching between the nominal position 22 and the offset position 20 or additional position 21, a passive and an active side of the switching module 5 must be set; this is the rule. Each one side always includes the semiconductor switching elements 61 and 71 or 62 and 72, which lie on the same side before or after the partial winding 8. Thus, it must be determined whether the first semiconductor switching element 61 of the first load branch 6 and the first semiconductor switching element 71 of the second load branch 7 are active and the second semiconductor switching element 62 of the first load branch 6 and the second semiconductor switching element 72 of the second load branch 7 are passive or vice versa.
- the IGBTs 11 and 12 of the semiconductor switching elements 61, 62, 71, and 72 need to be switched differently.
- the semiconductor switching elements on the fixed, passive side are always held during the process as conductive or blocking, wherein a semiconductor switching element is conductive and the other is not conductive.
- the semiconductor switching elements on the active side are actively switched due to the pulse width modulation carried out, ie they assume different states.
- both sides are active.
- FIG. 5 In the example of FIG. 5 is the active side of the illustrated switching module 5 of the first semiconductor switching element 61 of the first load branch 6 and the first semiconductor switching element 71 of the second load branch 7. Consequently, the passive side in FIG. 5 from the second semiconductor switching element 62 of the first load branch 6 and the second semiconductor switching element 72 of the second load branch 7.
- the second semiconductor switching element 72 of the second load branch 7 is always conductive.
- the second semiconductor switching element 62 of the first load branch 6 is always nonconductive.
- the current I thus flows either through the first IGBT 11 and the inverse diode 14 which is connected to the second IGBT 12 in the reverse direction by the second IGBT 12 and the inverse diode 14, which is connected to the first IGBT 11.
- the first and second IGBTs 11 and 12 of the second semiconductor switching element 62 in the first load branch 6 are always blocking, so that no current I flows here.
- the first or second IGBTs 11 or 12 of the first semiconductor switching elements 61 and 71 are turned off. Of the remaining two IGBTs 11 or 12 of the first semiconductor switching elements 61 and 71 one is always conducting, namely the one whose collector terminal C is connected to a negative pole " "and the emitter terminal E is connected to a positive pole" + "of the partial winding 8, possibly via other IGBT's or inverse diodes. Finally, the fourth IGBT of the active side is clocked with a duty cycle corresponding to the intermediate stage to be achieved. The collector terminal C of this IGBT thus lies at the positive pole "+" and at the emitter terminal E at the negative pole "-".
- the orientation of the voltage U such that on the upper side of the partial winding 8, the positive pole "+” and on the lower side of the negative pole "-” abut. Since the current I flows from left to right, the first IGBTs 11 of the first semiconductor switching elements 61 and 71 and the inverse diodes 14 connected in parallel to the second IGBT 12 of the first semiconductor switching elements 61 and 71 are used for this purpose. Considering the first IGBTs 11 of the first semiconductor switching elements 61 and 71, the positive terminal "+" of the partial winding 8 and the emitter terminal is located at the collector terminal C of the first IGBT 11 of the first semiconductor switching element 71 in the second load branch 7 E the negative pole "-" of the partial winding 8 at.
- the first IGBT 11 of the first semiconductor switching element 61 in the first load branch 6 is permanently conductive.
- the second IGBT 12 of the first semiconductor switching element 71 in the second load branch 7 is turned on shortly before the current zero crossing, ie before the change of direction of the current I.
- FIG. 6 is the switching module 5 off FIG. 5 displayed.
- the left side of the switching module 5 with the semiconductor switching elements 61 and 71 is still active as previously determined and the right side of the switching module 5 with the semiconductor switching elements 62 and 72 is passive.
- the direction of the current I has changed, so that it flows from the right side to the left side of the switching module 5.
- the orientation of the voltage U at the partial winding 8 has also been reversed.
- At the upper end of the partial winding 8 are now the negative pole "-" and at the lower end of the partial winding 8 of the positive pole "+" on.
- the second semiconductor switching element 62 in the first load branch is always non-conductive.
- the current I can only via the inverse diodes 14, which are connected in parallel to the first IGBTs 11 of the first and second semiconductor switching elements 61 and 71, and the second IGBTs 12 of the first and second semiconductor switching element 61 and 71 flow.
- the positive pole "+" is present in the second load branch 7; thus this is clocked. Since the second IGBT 12 of the first semiconductor switching element 71 is clocked in the second load branch 7, the second IGBT 12 of the first semiconductor switching element 61 in the first load branch 6 is thus switched permanently conducting.
- FIG. 7 is an on-load tap-changer 1 shown, in which a first switching module 51, a second switching module 52 and a third switching module 53 are connected in series.
- the partial windings 8 of these switching modules 51, 52 and 53 have different Windungssch. Particularly advantageous is the distribution of Windungstechnik 9: 3: 1.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Control Of Electrical Variables (AREA)
- Supply And Distribution Of Alternating Current (AREA)
- Inverter Devices (AREA)
Claims (8)
- Procédé de gestion d'un changeur de prises en charge (1) pour permettre une régulation de tension comprenant des éléments de commutation à semi-conducteurs (61, 62, 71, 72) sur un transformateur de régulation (2) équipé d'enroulements de régulation (3), selon lequel,- le changeur de prises en charge (1) est monté entre une ligne d'alimentation (4') qui est reliée à une partie fixe non régulée de l'enroulement de régulation (3) et une dérivation de charge (4),- le changeur de prises en charge (1) est constitué d'au moins un module de commutation (5) qui comporte une première branche de charge (6) une seconde branche de charge (7) montée en parallèle sur celle-ci, ainsi qu'entre ces branches un enroulement partiel (8),- la première branche de charge (6) comporte un premier élément de commutation à semi-conducteurs (61) entre la ligne d'alimentation (4') et l'enroulement partiel (8) et un second élément de commutation à semi-conducteurs (62) entre l'enroulement partiel (8) et la dérivation de charge (4),- la seconde branche de charge (7) comporte un premier élément de commutation à semi-conducteurs (71) entre la ligne d'alimentation (4') et l'enroulement partiel (8) et un second élément de commutation à semi-conducteurs (72) entre l'enroulement partiel (8) et la dérivation de charge (4),ce procédé comprenant les étapes suivantes, consistant à :- déterminer la prise intermédiaire souhaitée de l'enroulement partiel (8),- soustraire les enroulements de l'enroulement partiel (8) de la partie non régulée de l'enroulement de régulation (3) dans une première position du module de commutation (5), la position de retrait,- ajouter les enroulements de l'enroulement partiel (8) à la partie non régulée de l'enroulement de régulation dans une seconde position du module de commutation (5), la position d'addition,- évacuer totalement l'enroulement partiel dans une troisième position du module de commutation (5), la position nominale,- obtenir la prise intermédiaire en effectuant une commutation entre la troisième position et la première ou la seconde position,caractérisé en ce qu'il comporte des étapes consistant à :- déterminer un côté actif et un côté passif du module de commutation respectif (5) pour la prise intermédiaire souhaitée, le côté actif comprenant les premiers éléments de commutation à semi-conducteurs (61, 71) et le côté passif comprenant les seconds éléments de commutation à semi-conducteurs (62, 72) ou inversement,- déterminer les états de commutation des éléments de commutation à semi-conducteurs (61, 62, 71, 72) du module de commutation (5) de la façon suivante :- pour effectuer une commutation entre la première position et la seconde position, sur le côté actif du module de commutation respectif (5), l'élément de commutation à semi-conducteurs (61) de la première branche de charge (6) est conducteur, et l'élément de commutation (71) de la seconde branche de charge (7) est synchronisé par modulation largeur d'impulsion, et sur le côté passif du module de commutation respectif (5), l'élément de commutation à semi-conducteurs (62) de la première branche de charge (6) n'est pas conducteur et l'élément de commutation à semi-conducteurs (72) de la seconde branche de charge (7) est conducteur,- pour effectuer une commutation entre la troisième position et la première position, sur le côté actif du module de commutation (5) respectif l'élément de commutation à semi-conducteurs (61) de la première branche de charge (6) est synchronisé par modulation de la largeur d'impulsion et l'élément de commutation (71) de la seconde branche de charge (7) est conducteur et sur le côté positif du module de commutation (5) respectif l'élément de commutation à semi-conducteurs (62) de la première branche de charge (6) est conducteur et l'élément de commutation à semi-conducteurs (72) de la seconde branche de charge (7) n'est pas conducteur.
- Procédé conforme à la revendication 1, selon lequel :- chaque élément de commutation à semi-conducteurs (61, 62, 71, 72) est respectivement constitué d'un premier transistor bipolaire à grille isolée (IGBT) (11) et d'un second IGBT (12) qui sont branchés en anti-série,- le premier IGBT (11) et le second IGBT (12) sont chacun équipés d'une diode inverse (14) de sorte qu'une anode d'une diode inverse (14) soit reliée à une borne d'émetteur (E) et qu'une cathode de la diode inverse (14) soit reliée à une borne de collecteur (C) du premier IGBT (11) du second IGBT (12),- les éléments de commutation à semi-conducteurs (61, 62, 71, 72) de la première branche de charge (6) et de la seconde branche de charge (7) sont sélectivement coupés.
- Procédé conforme à la revendication 2, selon lequel :- les IGBT (11, 12) connectés aux diodes inverses (14) alternativement conductrices du côté actif respectif des premiers éléments de commutation à semi-conducteurs (61, 71) ou des seconds éléments de commutation à semi-conducteurs (62, 72) sont constamment bloquants,- parmi les deux IGBT (11, 12) alternativement conducteurs du côté actif, l'un est constamment conducteur, à savoir l'IGBT (11, 12) dont la borne de collecteur (C) et reliée à un pôle négatif (-) et dont la borne d'émetteur (E) est reliée à un pôle positif (+) de l'enroulement partiel (8),- parmi les deux IGBT (11, 12) alternativement conducteurs du côté actif, l'un est synchronisé, à savoir celui dont la borne de collecteur (C) est reliée au pôle positif (+) et dont la borne d'émetteur (E) au pôle négatif (-) de l'enroulement partiel (8),- sur le côté passif un élément de commutation à semi-conducteurs (61, 62, 71, 72) et constamment bloqué et l'autre élément de commutation à semi-conducteurs (61, 62, 71, 72) est constamment conducteur.
- Procédé conforme à l'une des revendications précédentes selon lequel :- en cas de modification de la direction de passage du courant (1) et de l'orientation du pôle positif (+) et du pôle négatif (-) on détermine sur l'enroulement partiel (8) quels IGBT (11, 12) des éléments de commutation à semi-conducteurs (61, 62, 71, 72) sont synchronisés ou branchés de façon à être conducteurs sur le côté actif.
- Procédé conforme à la revendication 4, selon lequel :- en cas de modification de la direction de passage de courant (I) et de l'orientation du pôle positif (+) et du pôle négatif (-) on détermine sur l'enroulement partiel (8) quels IGBT (11, 12) des éléments de commutation à semi-conducteurs (61, 62 ,71 ,72) sont branchés de façon à être conducteurs ou non conducteurs sur le côté passif.
- Procédé conforme à la revendication 5, selon lequel :- en cas de modification de la direction de passage du courant (I) et de l'orientation du pôle positif (+) et du pôle négatif (-) sur l'enroulement partiel (8) les côtés actifs et passifs sont déterminés.
- Procédé conforme à l'une des revendications précédentes selon lequel :- le changeur de prises en charge (1) est constitué d'un premier module de commutation (51 ) d'un second module de commutation (52) et d'un troisième module de commutation (53),- les enroulements partiels (8) d'un module de commutation respectif (51, 52, 53) ont des rapports d'enroulement différents.
- Procédé conforme à la revendication 7, selon lequel le rapport d'enroulement des enroulements partiels (8) est de 9 :3 :1.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013101652.9A DE102013101652A1 (de) | 2013-02-20 | 2013-02-20 | Laststufenschalter mit Halbleiter-Schaltelementen und Verfahren zum Betrieb eines Laststufenschalters |
PCT/EP2014/050697 WO2014127932A2 (fr) | 2013-02-20 | 2014-01-15 | Changeur de prises en charge à éléments de commutation à semi-conducteurs et procédé pour faire fonctionner un changeur de prises en charge |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2959492A2 EP2959492A2 (fr) | 2015-12-30 |
EP2959492B1 true EP2959492B1 (fr) | 2017-12-27 |
Family
ID=50002696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP14701315.5A Not-in-force EP2959492B1 (fr) | 2013-02-20 | 2014-01-15 | Procédé pour faire fonctionner un changeur de prises en charge avec des éléments de commutation à semi-conducteurs |
Country Status (10)
Country | Link |
---|---|
US (1) | US9588527B2 (fr) |
EP (1) | EP2959492B1 (fr) |
JP (1) | JP2016507907A (fr) |
KR (1) | KR20150119877A (fr) |
CN (1) | CN105009241B (fr) |
BR (1) | BR112015019248A2 (fr) |
DE (1) | DE102013101652A1 (fr) |
HK (1) | HK1214678A1 (fr) |
RU (1) | RU2015135326A (fr) |
WO (1) | WO2014127932A2 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106252040A (zh) * | 2016-08-18 | 2016-12-21 | 中国电力科学研究院 | 一种无弧有载自动调压配电变压器装置及其调压方法 |
EP3327911B1 (fr) * | 2016-11-23 | 2020-10-21 | Maschinenfabrik Reinhausen GmbH | Procédé de commande d'un module de commutation faisant appel à des éléments de commutation de thyristor |
WO2019233585A1 (fr) | 2018-06-07 | 2019-12-12 | Siemens Aktiengesellschaft | Dispositif pour convertir une tension continue électrique en une tension alternative |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL278413A (fr) * | 1961-05-15 | |||
JPS62184514A (ja) * | 1986-02-10 | 1987-08-12 | Toshiba Corp | サイリスタ制御式電圧位相調整器 |
JPH0645320U (ja) * | 1992-11-24 | 1994-06-14 | 株式会社明電舎 | 変圧器内蔵式電圧調整装置 |
WO1995027931A1 (fr) * | 1994-04-06 | 1995-10-19 | Utility Systems Technologies, Inc. | Commutateurs en charge |
NL1000914C2 (nl) * | 1995-08-01 | 1997-02-04 | Geb Zuid Holland West Nv | Werkwijze en inrichting voor continue instelling en regeling van een transformatoroverzetverhouding, alsmede transformator voorzien van een dergelijke inrichting. |
US6087738A (en) * | 1998-08-20 | 2000-07-11 | Robicon Corporation | Variable output three-phase transformer |
JP2000125473A (ja) * | 1998-10-19 | 2000-04-28 | Toshiba Corp | 電力調整装置及びその装置の制御方法 |
JP2000287447A (ja) * | 1999-03-31 | 2000-10-13 | Hitachi Ltd | 電圧制御機能付き常時商用無停電電源装置 |
US6867570B2 (en) * | 2000-08-18 | 2005-03-15 | John J. Vithayathil | Circuit arrangement for the static generation of a variable electric output |
JP3816487B2 (ja) * | 2003-12-25 | 2006-08-30 | 株式会社エヌ・ティ・ティ・データ・イー・エックス・テクノ | 無停電電力供給機能を付加した交流電圧制御装置 |
US8203319B2 (en) * | 2009-07-09 | 2012-06-19 | General Electric Company | Transformer on-load tap changer using MEMS technology |
GB0916190D0 (en) * | 2009-09-15 | 2009-10-28 | Imp Innovations Ltd | Method and apparatus for performing on-load mechanical switching operations |
DE102009060132B3 (de) * | 2009-12-23 | 2011-05-12 | Maschinenfabrik Reinhausen Gmbh | Stufenschalter mit Polungsschalter an einem Regeltransformator |
UA112302C2 (uk) | 2010-12-17 | 2016-08-25 | Машіненфабрік Райнхаузен Гмбх | Ступеневий перемикач |
DE102011012080A1 (de) * | 2011-02-23 | 2012-08-23 | Maschinenfabrik Reinhausen Gmbh | Stufenschalter |
-
2013
- 2013-02-20 DE DE102013101652.9A patent/DE102013101652A1/de not_active Withdrawn
-
2014
- 2014-01-15 EP EP14701315.5A patent/EP2959492B1/fr not_active Not-in-force
- 2014-01-15 BR BR112015019248A patent/BR112015019248A2/pt not_active IP Right Cessation
- 2014-01-15 CN CN201480009559.9A patent/CN105009241B/zh not_active Expired - Fee Related
- 2014-01-15 JP JP2015558379A patent/JP2016507907A/ja active Pending
- 2014-01-15 WO PCT/EP2014/050697 patent/WO2014127932A2/fr active Application Filing
- 2014-01-15 US US14/761,372 patent/US9588527B2/en not_active Expired - Fee Related
- 2014-01-15 KR KR1020157023328A patent/KR20150119877A/ko not_active Application Discontinuation
- 2014-01-15 RU RU2015135326A patent/RU2015135326A/ru not_active Application Discontinuation
-
2016
- 2016-03-07 HK HK16102587.7A patent/HK1214678A1/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
BR112015019248A2 (pt) | 2017-08-22 |
US20150338861A1 (en) | 2015-11-26 |
CN105009241B (zh) | 2017-09-08 |
KR20150119877A (ko) | 2015-10-26 |
WO2014127932A2 (fr) | 2014-08-28 |
EP2959492A2 (fr) | 2015-12-30 |
RU2015135326A (ru) | 2017-03-27 |
JP2016507907A (ja) | 2016-03-10 |
DE102013101652A1 (de) | 2014-08-21 |
HK1214678A1 (zh) | 2016-07-29 |
US9588527B2 (en) | 2017-03-07 |
CN105009241A (zh) | 2015-10-28 |
WO2014127932A3 (fr) | 2015-06-18 |
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