Classifications

• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B3/00—Ohmic-resistance heating
  • H05B3/0033—Heating devices using lamps
  • H05B3/0038—Heating devices using lamps for industrial applications
  • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

• the present invention relates to a device for irradiating a substrate, comprising a housing, and within the housing a receptacle for the substrate to be irradiated with a circular, a first semicircular part surface and a second semicircular part surface comprising the irradiation surface, a first A spotlight for generating optical radiation with a first radiator tube arranged in a plane of curvature extending parallel to the irradiation surface, having a radiator tube end through which a power supply is routed, wherein the receiver and the first radiator are movable relative to one another.
• the present invention relates to a use of the device according to the invention for irradiating a substrate.
• the present invention relates to a radiator for the generation of optical radiation, comprising a curved in a plane of curvature radiator tube with a radiator tube end through which a power supply is guided, wherein the radiator tube comprises a plurality of curved curved sections each having a radius of curvature.
• Such devices or emitters are used, for example, for drying paints and varnishes, for curing coatings, for heating food products or for processing semiconductor wafers.
• State of the art are used, for example, for drying paints and varnishes, for curing coatings, for heating food products or for processing semiconductor wafers.
• Known devices for irradiation and / or thermal treatment of a substrate consist of a process chamber, within which a receptacle for the substrate to be irradiated and at least one optical emitter, for example an infrared emitter, are arranged.
• a uniform irradiation of the substrate surface or a homogeneous temperature distribution within the substrate of importance are arranged. Uniform irradiation of the substrate surface is therefore fundamentally desirable if a homogeneous temperature distribution can already be achieved in this way.
• the homogeneous temperature distribution within the substrate can, however, also be achieved by radially inhomogeneous irradiation of the substrate.
• the disclosed therein rapid heating system for semiconductor wafer has a rotatably mounted receptacle for a substrate with a circular irradiation surface and a plurality of infrared radiator with a linear, cylindrical-elongated radiator tube made of quartz glass.
• a plurality of optical radiators are arranged parallel to one another in the rapid heating system; they form a surface radiator in their entirety.
• the infrared radiators are arranged in two irradiation planes, namely above and below the irradiation surface. Due to the planar juxtaposition of the infrared radiator, a plurality of infrared radiators are provided relative to the surface to be irradiated in the irradiation device.
• the irradiation device furthermore has a high radiation power per unit area.
• the heat output of the infrared radiators must be matched to each other. This applies in particular to the edge regions of the irradiation surface.
• An irradiation device with a planar juxtaposition of linearly stretched infrared radiators is therefore both constructive and control technology consuming.
• radiators with a circularly curved radiator tube are known in addition to radiators with a linear, cylindrical-elongated radiator tube from the prior art.
• DE 88 02 042 U1 teaches an infrared radiation Source with multiple curved in a plane radiator tube with a circular Grundformt.
• the round radiator is suitable, for example, for heating cooktops, or for heating pipe surfaces.
• JP 63-222 430 A discloses an apparatus for irradiating wafers, in which a plurality of radiators having a semicircular radiator tube are arranged in pairs parallel to an irradiation plane such that they run around a center of the irradiation plane in concentric circles.
• the invention is therefore based on the object of specifying a device for irradiating a substrate, which enables a rotationally symmetrical-homogeneous temperature distribution of the substrate with the least possible constructive and control-technical effort. Furthermore, the invention has for its object to provide a suitable use of the device according to the invention.
• the invention has for its object to provide a radiator for the generation of optical radiation, which allows based on a semi-circular irradiation surface, a substantially constant irradiation intensity or temperature distribution and which is also easy and inexpensive to manufacture.
• this object is achieved on the basis of a device for irradiating a substrate of the type mentioned in the introduction, in that the first radiator tube has a curved illumination longitudinal section which, in the plane of curvature, has mirror symmetry. risch-oval basic shape, wherein the first illumination length portion is assigned to one of the semi-circular partial surfaces.
• a first radiator for the generation of optical radiation is provided within the housing in addition to a receptacle for the substrate to be irradiated. Because the receptacle and the radiator are movable relative to one another, a circular irradiation surface is irradiated by the first radiator.
• the receptacle and / or the first radiator are rotatable about an axis of rotation for this purpose.
• Optical emitters in the sense of the invention are, for example, infrared emitters, UV emitters or emitters for the emission of visible light.
• the device may comprise one or more radiators.
• a homogeneous irradiation of the irradiation surface is achieved if, per unit of time, a uniformly uniform irradiation intensity strikes every surface unit of the irradiation surface. Due to the fact that the receptacle and the first radiator are movable relative to one another, the rotational movement basically achieves a homogeneous irradiation of the points of the substrate lying on a common circular path.
• a first radiator is provided with a first radiator tube, which has a curved illumination length section.
• the bending of the illumination length section results in a larger effective radiator length section in a circular path which is farther away from the pivot point, so that a higher irradiation intensity can also be provided for the radially-spaced radiating surface .
• the illumination length section is understood to be the area of the radiation tube within which usable radiation is generated.
• the illumination length section corresponds to or is smaller than the radiator tube length. He has according to the invention has a mirror-symmetrical-oval basic shape.
• a mirror-symmetrical-oval basic shape is understood a roundish convex shape with at least two different curvature sections. It comprises a curved, first region with a first radius of curvature and an elongated, second region with a second radius of curvature, wherein the second radius of curvature is greater than the first radius of curvature. Due to the different radii of curvature, the illumination length section has a compressed and stretched shape.
• the basic shape may be closed, but preferably it is open.
• the mirror symmetry of the basic form contributes to a uniform irradiation of the irradiation surface. Due to the mirror-symmetrical oval shape, a homogeneous irradiation of the irradiation surface can be achieved by using the elongated region of the radiator tube to irradiate a portion of the irradiation surface at a large radial distance from the rotation axis, preferably an edge region of the irradiation surface. As a result, an irradiation intensity adapted to the radial distance is made possible. By varying this basic form, a homogeneous temperature distribution can also be ensured for those cases in which an uneven irradiation intensity is required.
• the basic form is suitable for increasing the irradiance with increasing radial distance from the center of the irradiation surface.
• the illumination longitudinal section is assigned to one of the semicircular partial surfaces of the irradiation surface. Such an assignment makes it possible to achieve sufficient irradiation of the irradiation surface in the edge area and in the area of the axis of rotation, for example by making the elongate area of the illumination length of an outer zone of the irradiation area and the remaining area of the irradiation area curved region is assigned to an inner, rotational axis-proximal portion of the irradiation surface.
• the device comprises a second radiator for the generation of optical radiation with a arranged in the plane of curvature, the second radiator tube with a radiator tube end through which a power supply is performed, summarized, the second Emitter tube has a curved illumination length portion which extends in the plane of curvature with mirror-symmetrical-oval basic shape, and that the illumination length sections of the first and the second optical emitter are point symmetrical to each other.
• a second emitter for the generation of optical radiation with a curved illumination length section with a mirror-symmetrical-oval basic shape contributes to a uniform, rotationally symmetric-homogeneous irradiation of the irradiation surface or of the substrate.
• the fact that both the first and the second radiator are arranged in the same curvature plane, their distance from the irradiation surface is the same.
• a particularly homogeneous irradiation or temperature distribution is therefore obtained when the radiation power and distribution of the second radiator corresponds to that of the first radiator.
• the second optical emitter therefore preferably corresponds to the first optical emitter.
• the illumination length sections of the first and the second radiator have a mirror-symmetrical shape
• a central axis is defined for each radiator.
• the two radiators are arranged such that the illumination lengths of the first and the second optical radiators are point-symmetrical to one another.
• the center axes of both radiators are offset or collinear with each other.
• Both radiators are essentially associated with a semicircular partial surface or with both semicircular partial surfaces.
• the illumination length section of the first Radiator comprises a plurality of curved curved portions each having a radius of curvature, wherein the illumination length from the Strahlerrohr- end successively seen a first curvature section with left curvature and a first radius of curvature, a second curvature section with right curvature and a second radius of curvature, a third curved section with right curvature and a third radius of curvature, a fourth curvature section with right curvature and the second radius of curvature and a fifth curvature section with left curvature and the first radius of curvature, wherein the third radius of curvature is at least a factor of three greater than the first and the second radius of curvature.
• the first radiator has a plurality of curved curved sections whose course is defined by a central axis of the radiator tube.
• a curvature section is understood to mean a section of the radiator tube whose profile can be approximately described by a circle. In each case a radius of curvature is determined for each curvature section. The radius of curvature is the distance between the center of this circle and the radiator center axis.
• the curvature portions may be directly adjacent to each other or spaced apart.
• Each curvature section also has a curvature direction which extends in a plan view on the curvature plane to the right or to the left.
• the length of illumination of the radiator tube which is directly or indirectly consecutive, has the following curvature sections: a first curvature section with left curvature and a first curvature radius, a second curvature section with right curvature and a second curvature radius, a third curvature section with right curvature and a third radius of curvature, a fourth curvature section with right curvature and the second radius of curvature and a fifth curvature section with left curvature and the first radius of curvature.
• the third radius of curvature is at least a factor of three greater than the first and the second radius of curvature, a comparatively flat and elongated third curved section is obtained, which is available for irradiation of, for example, the edge area, compared to the other curved sections.
• a comparatively large illumination length section is assigned to the edge region.
• the length of the third curvature portion constitutes 25% to 50% of the length of the illumination length. If the length of the third curvature section is less than 25% of the illumination length, the radiator has only a small longitudinal extent. If the length of the third curvature section is more than 50%, an unnecessarily long stretched curvature section is obtained.
• first and the second curved portion and the fourth and the fifth curved portion are spaced from each other by a linear radiator tube section.
• the distance between the radiator tube ends can be adjusted.
• the length of the linear radiator tube sections influences the later position of the radiator tube ends.
• the linear sections also make it easier to maintain a certain distance between the power supplies and thus their electrical contact.
• linear sections viewed from the point of intersection of the axis of rotation with the plane of curvature, run at least partially in the radial direction, so that the course and the length of the linear sections also adjust the irradiation intensity per unit area with respect to the part of the irradiation area assigned to the linear sections can.
• the first radiator tube has a radiator tube length, and that the illumination length section of the first radiator is at least 75%, preferably at least 90%, of the radiator tube length.
• the emitter tube Due to the fact that the illumination length section makes up at least 75% of the emitter tube length, the emitter tube has a small proportion of unlit areas. Such a radiator tube ensures a compact design of the radiator and thus the irradiation device. This is especially true when the illumination length portion is at least 90% of the radiator tube length.
• the circular irradiation surface comprises an inner irradiation zone in the form of a circular area and an annular, outer irradiation zone surrounding the inner irradiation area, wherein the circular, inner irradiation zone and the annular outer irradiation zone have the same surface area, and 40 % to 70% of the length of the illumination length of the first radiator associated with the outer annular irradiation zone.
• the irradiation surface has a circular, inner irradiation zone and a surface-identical annular, outer irradiation zone.
• the center of the outer and inner irradiation zones is formed by the rotation axis of the irradiation device. Because the receptacle and the first radiator are movable relative to one another, homogeneous irradiation is only achieved if a larger radiation power is provided with increasing radial distance from the axis of rotation.
• the radiation power incident on the outer irradiation zone depends, for example, on the length of the illumination length section (illumination length) associated with the outer annular irradiation zone.
• the illumination length is associated with or goes beyond the circular, inner irradiation zone and the annular, outer irradiation zone.
• the illumination length section of the first radiator is arranged exclusively over one of the semicircular partial surfaces.
• a radiator arranged exclusively over one of the semicircular partial surfaces basically results in that at any time only a portion of the substrate to be irradiated is always heated. However, any heating differences that occur are dependent on the relative speed of rotation. At a high rotational speed, the effect of different heating is lost.
• An illumination longitudinal section of the first radiator arranged exclusively over the first semicircular partial surface permits a particularly compact design of the irradiation device, wherein the space above the second semicircular partial surface basically also for another use, for example for a metering device for applying a liquid to the substrate to be irradiated remains.
• the first radiator tube has a first radiator tube diameter, and that the first and the second radii of curvature of the first radiator tube are at least 1.0 times, preferably at least 1.5 times. times the first radiator tube diameter is.
• a radius of curvature of at least 1.5 times the radiator tube diameter is easy and inexpensive to manufacture.
• a reflector for reflection of the optical radiation is provided within the housing.
• a reflector enables energy-efficient operation of the device.
• a reflector also leads to a faster heating of the substrate, so that the process times can be shortened.
• the reflector can be diffuse or specularly reflective. It is applied, for example, on the radiator 5 or on the housing or the housing itself acts as a reflector.
• the device according to the invention with a first radiator in the form of an infrared radiator is particularly suitable for the processing of semiconductor wafers.
• the device according to the invention for irradiating a substrate with a first radiator in the form of a gas discharge radiator with inert gas filling can be used advantageously for curing coatings on optical storage media or semiconductor wafers.
• argon, krypton or xenon can be used as the filling gas.
• window wherein the window of quartz glass, aluminum silicate glass, Vycor or sapphire is made and more than 75%, preferably more than 85% of the incident on the window, the optical radiation generated by the radiator passes.
• window serves to protect the radiator from contamination.
• Vycor is the brand name of a glass made by Corning.
• the device comprises a cooling element that allows cooling of the substrate by means of gas flow.
• gases are, for example, noble gases and nitrogen.
• the housing has a thermal shock resistance of more than 30 10 K s "1 , more preferably of more than 100 K s ' and a thermal mass (defined as the density * specific heat at 20 ° C) of less than 2.5 J cm "2 K” ⁇ more preferably less than 1, 8 J cm “2 K” -1.
• the abovementioned technical object is achieved on the basis of a radiator with the features mentioned above according to the invention in that the radiator tube has a curved illumination longitudinal section which runs in the plane of curvature with a mirror-symmetrical oval basic shape, the illumination longitudinal section radiating from the radiator tube.
• Optical emitters in the sense of the invention are, for example, infrared emitters, UV emitters or emitters for the emission of visible light.
• the radiator according to the invention is particularly suitable for the uniform irradiation of a semicircular irradiation zone.
• the semicircular irradiation zone comprises an outer zone assigned to the circular edge area of the irradiation zone and an inner zone surrounding the center of the corresponding full circle in a semicircle.
• the radiator according to the invention has a plurality of curved curvature sections whose course is defined by a central axis of the radiator tube.
• a curvature section is understood to mean a section of the radiator tube whose profile can be approximately described by a circle.
• the curvature portions may be directly adjacent to each other or spaced apart from each other.
• Each curvature section also has a curvature direction which extends in a plan view on the curvature plane to the right or to the left.
• the third radius of curvature is at least a factor of three greater than the first and the second radius of curvature, a comparatively flat and elongated third curved section is obtained in comparison with the other curved sections, which is subsequently irradiated for irradiation, for example, to the outer zone of the irradiation zone Available.
• a comparatively large illumination length section is assigned to the edge region of the irradiation zone.
• the length of the third curvature section makes up 25% to 50% of the illumination length section.
• the illumination length section has a mirror-symmetrical oval basic shape.
• the basic shape is either closed or open.
• the basic shape is open.
• the mirror symmetry of the basic shape contributes to a uniform irradiation of the base surface.
• the radiator tube has a radiator tube length, and that the illumination length section constitutes at least 75%, preferably at least 90%, of the respective radiator tube length.
• the emitter tube has a small proportion of unlit areas, as a result of which a compact emitter is obtained. This is especially true if the illumination length section makes up at least 90% of the radiator tube length. It has proven useful if the radiator tube has a radiator tube diameter, and that the first and second radii of curvature of the radiator tube is at least 1.0 times, preferably at least 1.5 times, of the first radiator tube diameter.
• the radius of curvature which is at least 0 times, preferably at least 1.5 times, of the radiator tube diameter contributes to a compact design of the radiator and, moreover, is simple and inexpensive to manufacture.
• Figure 1 shows a first embodiment of the inventive device for
• FIG. 2 a spatial representation of a second embodiment of the device according to the invention with an irradiation space lying between the irradiation surface and the plane of curvature, in which the irradiation field is irradiated with an optical emitter having a mirror-symmetrical-oval illumination length section.
• the irradiation field is irradiated with an optical emitter having a mirror-symmetrical-oval illumination length section.
• FIG. 3 shows a first embodiment of a radiator for the production of optical
• FIG. 4 shows a second embodiment of a radiator for the generation of optical radiation according to the invention for use in a device according to the invention for irradiating a substrate.
• FIG. 1 schematically shows a plan view of a first embodiment of the inventive irradiation apparatus for the processing of semiconductor wafers, to which the reference numeral 100 is assigned overall.
• the device 100 comprises a housing 101, as well as within the housing 101 a around a rotation axis (not shown) rotatable receptacle 102 for a substrate 103 to be irradiated, a thermal infrared radiator 105 with a radiator tube 106 15 and a passage 120 for a metering device (not shown ).
• the receptacle 102 has a circular irradiation surface 104, which is subdivided into a first semicircular part surface 104a and a second semicircular part surface 104b.
• the irradiation surface has an inner irradiation zone 116 in the form of a circular area and an annular outer irradiation zone 117 of the same area.
• the thermal infrared radiator 105 is arranged inside the housing 101 in a plane of curvature parallel to the irradiation surface 104.
• a gas-tight seal 108a, 108b of the radiator tube 106 is provided, through which a power supply 109a, 25 109b is guided.
• a acting as a reflector layer of S1O 2 is applied.
• the emitter tube 106 also has a plurality of curved curvature sections 110, 111, 112, 113, 114.
• the curvature portion 110 From the center 115 of the device 100, the curvature portion 110 has a left curvature with a radius of curvature of 25 mm, the curvature portion 111 a right curvature with a curvature radius of 25 mm, the curvature portion 112 a right curvature and a curvature radius of 180 mm, the curvature portion 113 a right curvature with a radius of curvature of 25 mm and the curvature portion 114 a left curvature with a radius of curvature of 25 mm.
• the bent curved sections 110, 111, 112, 113, 114 form the lighting length section of the infrared radiator 105.
• the lighting longitudinal section runs in the plane of curvature with a mirror-symmetrical-oval shape; it is arranged exclusively over the semi-circular partial surface 104b and accounts for 90% of the radiator tube length.
• 65% of the length of the radiator tube 106 is associated with the outer annular irradiation zone 117.
• a window 107 made of quartz glass is arranged between the plane of curvature and the irradiation surface 104.
• the device 100 comprises a second infrared radiator (not shown), which is also arranged in the plane of curvature.
• the second infrared radiator is designed like the infrared radiation 105; in the curvature plane, it is arranged offset relative to the infrared radiator 105 in such a way that the illumination longitudinal sections of the infrared radiator 105 and of the second infrared radiator are point-symmetrical to each other.
• FIG. 2 schematically shows in a spatial representation a second embodiment of the device according to the invention for irradiating a substrate 200.
• the device 200 has a receptacle for the substrate to be irradiated with an irradiation surface 202 and a curvature plane 201.
• the curvature plane 201 of the device 200 is shown in FIG. 2 as a circular area with the center point 207.
• the radiation tube of a curved infrared radiator extends with a lighting Length section which extends in the plane of curvature with mirror-symmetrical-oval shape (not shown).
• the irradiation surface 202 is arranged parallel to the curvature plane 201; It is also shown as a circular area.
• the center 208 of the circular surface of the irradiation surface 202 and the center 207 define an axis of rotation 209 about which the infrared radiator and the receptacle for the substrate to be irradiated are movable relative to each other.
• the irradiation surface 202 comprises a first semicircular part surface 203 and a second semicircular part surface 204.
• the irradiation surface 202 has an inner irradiation zone 205 in the form of a circular surface with the radius ⁇ .
• the inner irradiation zone 205 is surrounded by an outer, annular irradiation zone 206 whose radius is denoted by r a .
• the substrate to be irradiated is also shown in FIG. 2 as a hatched circular area 210 with the radius r.
• FIG. 3 shows a first embodiment of the thermal infrared radiator 300 according to the invention in plan view (A), side view (B) and in spatial representation (C).
• the thermal infrared radiator 300 is suitable for use in the device 100, 200 according to the invention as shown in FIG. 1 or FIG. 2.
• the infrared radiator 300 has a radiator tube 301 which is bent in a plane of curvature and has a plurality of curvature sections 310, 311, 312, 313, 314.
• the curvature of the radiator tube 301 is shown by the dashed line 320.
• a tungsten filament (not shown) is arranged as a thermal radiator.
• a gas-tight seal 302a, 302b is provided at both ends of the radiator tube 301, through each of which a power supply is performed.
• the gas-tight seals 302a, 302b have a distance a of 70 mm.
• the length b, c of the power supply lines 305a, 305b is 200 mm.
• the radiator dimensions d, e and f are 71 mm, 116 mm and 4 mm, respectively.
• the radiator tube 301 has a radiator tube outer diameter of 10 mm; it is filled with argon.
• the filling pressure is 800 mbar at room temperature.
• the radiator 300 has a rated voltage of 360 V and a rated power of 2,790 W.
• the length of the tungsten filament is 465 mm. Consequently, the specific power of the radiator 300 with respect to the length of the helix at rated voltage is 60 W / cm. Below rated voltage, the filament temperature is 1,600 ° C.
• a reflector layer of opaque diffusely scattering quartz glass is applied (QRC ® from Heraeus Noblelight).
• FIG. 4 shows a second embodiment of the radiator according to the invention in the form of the thermal infrared radiator 400 in plan view (A), side view (B) and in spatial representation (C).
• the thermal infrared radiator 400 is suitable for use in the device 100, 200 according to FIG. 1 or FIG. 2 according to the invention.
• the infrared radiator 400 has a radiator tube 401 bent in a plane of curvature and having a plurality of curvature sections 410, 411, 412, 413, 414.
• the curvature of the radiator tube 401 is shown by the dashed line 420.
• a tungsten filament (not shown) is arranged as a thermal radiator.
• a gas-tight seal 402a, 402b is provided at both ends of the radiator tube 401, through which a respective power supply is routed.
• the gas-tight seals 402a, 402b have a distance a of 70 mm.
• the length b, c of the power supply lines 405a, 405b is 200 mm.
• the radiator dimensions d, e, h and g are 75 mm, 112 mm, 43 mm and 32 mm, respectively.
• the radiator tube 401 has a radiator tube outer diameter of 10 mm; it is filled with argon.
• the filling pressure is 800 mbar at room temperature.
• the radiator 400 has a rated voltage of 360 V and a rated power of 4,300 W.
• the length of the tungsten filament is 430 mm. Accordingly, the specific power of the radiator 400 relative to the length of the helix at rated voltage is 100 W / cm. Below rated voltage, the coil temperature is 2,600 ° C.
• a reflector layer of opaque diffusely scattering quartz glass is applied (QRC ® from Heraeus Noblelight).
• the medium to be cured (a paint, an epoxy resin, or the like) is given as a fluid centered on the rapidly rotating disk, so that it is distributed homogeneously on the surface of the disk due to the rotation of the disk.
• the fluid when the surface is completely wetted and the layer is nearly homogeneous, is exposed to intense radiation which allows the crosslinking of monomers of the fluid.
• an emitter according to the invention in the form of a discharge lamp which in normal operation has a high proportion of the emitted radiation intensity in the region of the effective wavelength of the crosslinking.
• the optical radiator is arranged in a plane parallel to the surface of the data carrier at a distance of 20 mm. This distance is defined on the one hand by the center of the discharge in the radiator tube and on the other hand by the surface of the data carrier.
• the electrodes of the optical radiator are so orders that the attachment points of the arc in the new condition of the radiator are located on a plane that also includes the axis of rotation.
• the radiator tube of the optical radiator is made of a quartz glass tube of 1 * 6 mm, wherein the first number (“1") of the wall thickness in mm and the second numerical value ("6") corresponds to the outer diameter in mm.
• the radii of the radiator tube are at least 10 mm.
• the irradiation device has an opening for the metering addition of the fluid in the region of the axis of rotation of the data carrier.
• the device for receiving and rotating the data carrier is located below, the irradiation device above the plane which is defined by the data carrier.
• the housing of the irradiation device consists of a body made of aluminum, the radiator side has high-quality, the optical radiation reflecting surfaces.
• the housing completely encloses the optical emitter.
• the electrical leads are arranged in the housing.
• additions and discharges for a cooling gas in the aluminum body are introduced into the housing in addition to the feeders for the electrical connections and the passage for the metering device, so that the housing with up to 10 l / min of nitrogen can be actively cooled.
• a window of quartz glass with 2.0 mm thickness is inserted between the optical radiator and the data carrier. The quartz glass window is fixed without additional seal on the aluminum body, the gap widths are consistently less than 0.1 mm.
• the quartz glass has a thermal shock resistance of 1000 K s "1 , aluminum of better 10 K s " 1 , the thermal mass (defined as density * specific heat at 20 ° C) of aluminum is 2.42 J cm “2 K '1 , of quartz glass better than 1, 8 J cm “2 K ⁇ 1 .
• the embodiment 1 corresponds to the embodiment 1a with the following differences:
• the device according to Example 1b differs from the device of Example 1a in that the housing does not completely surround the optical emitter.
• the radiator ends of the optical radiator are led out of the radiation space. They are watertight sealed in the area in which they are led out of the radiation room.
• the electrical leads are arranged outside the housing. Furthermore, inlets and outlets are introduced for a cooling fluid in the aluminum body, so that the housing can be actively cooled with up to 6 l / min of deionized water.
• the quartz glass window is attached to the aluminum body of the housing with an additional Viton seal.
• Example 2 relates to the application of the device according to the invention according to FIG. 1 in a process for curing protective lacquer on data carrier blanks (CD, DVD, Blue Ray, etc.) by means of spin coating.
• data carrier blanks CD, DVD, Blue Ray, etc.
• Embodiment 2 corresponds to embodiment a with the following differences:
• the housing of the irradiation device is a body made of quartz glass, the IR source is coated with a layer of opaque, diffusely reflective quartz glass (QRC ® from Heraeus Noblelight).
• inlets and outlets for a cooling gas are introduced into the housing so that the housing can be cooled actively with up to 2 l / min of nitrogen.
• a cleaning solution comprising a solvent (for example water, methanol, isopropanol, acetone) which may also contain active substances (for example sulfuric acid, phosphoric acid, ammonia, aqua regia, hydrofluoric acid) is applied to the wafer from the top side.
• the cleaning solution is already placed at a temperature close to the evaporation point of the liquid on the wafer for a particularly intensive or fast process control.
• the wafer is irradiated with infrared radiation.
• Infrared radiation in the range ⁇ 1100 nm is preferably used when the wafer itself is to be heated, infrared radiation> 1500 nm is preferably used when the cleaning solution itself is to be heated.
• the following arrangement is chosen: Above the rapidly rotating wafer (> 100 min -1 ) is a device which applies the cleaning solution to the wafer, otherwise the wafer is flowed around with a gas stream of low turbulence from above.
• a device for receiving the wafer by means of pins this device also puts the wafer in rotation.
• Zwi see rotating device and wafer is also the irradiation device, but resting.
• the housing of the irradiation device consists of an opaque glass ceramic (eg MACOR TM from Corning) and is made in one piece. There are provided feeds for the electrical connections of the radiator and channels for the supply of cooling gas.
• a disc of quartz glass eg GE 200 or comparable quality
• the window is placed with a gap width of 0.15 mm, this gap being defined by means of some suitable support points projecting from the housing, so that a cooling gas rate of 1.3 l / min is achieved.
• Nitrogen provided as a cooling gas Nitrogen provided.
• the thermal mass of MACOR is 2.0 J cm '2 K " of quartz glass is less than 1.8 J cm “ 2 K "1 .
• Example 3b describes an alternative embodiment of a device according to the invention and its use for cleaning silicon wafers with a diameter of 12 inches or 300 mm.
• the embodiment 3b corresponds to the embodiment 3a with the following differences:
• the housing is made of quartz glass (e.g., 7940 from Corning) in one piece. There are provided feeds for the electrical connections of the radiator and channels for the supply and discharge of cooling gas. As an optical window, a disk of quartz glass is provided with a thickness of 1, 5 mm, which is placed without a defined gap.
• quartz glass e.g., 7940 from Corning
• cooling gas nitrogen As the cooling gas nitrogen is provided. It is achieved a cooling gas rate of 1, 0 l / min.
• the optical emitter used corresponds to the emitter of FIG. 3.

Landscapes

• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Toxicology (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Health & Medical Sciences (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Non-Portable Lighting Devices Or Systems Thereof (AREA)
• Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
• Physical Or Chemical Processes And Apparatus (AREA)
• Resistance Heating (AREA)
• Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=48742592

Family Applications (1)

Country Status (6)

Families Citing this family (4)

Citations (3)

Family Cites Families (24)

• 2012
  • 2012-07-23 DE DE102012106667A patent/DE102012106667B3/de not_active Expired - Fee Related
• 2013
  • 2013-07-17 WO PCT/EP2013/065082 patent/WO2014016178A1/de active Application Filing
  • 2013-07-17 US US14/416,958 patent/US9832817B2/en not_active Expired - Fee Related
  • 2013-07-17 CN CN201380038694.1A patent/CN104620367B/zh not_active Expired - Fee Related
  • 2013-07-17 KR KR1020157001464A patent/KR101714940B1/ko active IP Right Grant
  • 2013-07-17 EP EP13753110.9A patent/EP2875523A1/de not_active Withdrawn

Patent Citations (3)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events