EP2873307B1 - Surface-wave applicator and method for plasma production - Google Patents
Surface-wave applicator and method for plasma production Download PDFInfo
- Publication number
- EP2873307B1 EP2873307B1 EP13735272.0A EP13735272A EP2873307B1 EP 2873307 B1 EP2873307 B1 EP 2873307B1 EP 13735272 A EP13735272 A EP 13735272A EP 2873307 B1 EP2873307 B1 EP 2873307B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- tube
- applicator
- dielectric
- plasma
- coaxial assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title description 7
- 239000004020 conductor Substances 0.000 claims description 48
- 230000005684 electric field Effects 0.000 claims description 20
- 230000005415 magnetization Effects 0.000 claims description 18
- 230000001902 propagating effect Effects 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000012809 cooling fluid Substances 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 210000002381 plasma Anatomy 0.000 description 117
- 239000007789 gas Substances 0.000 description 48
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002964 rayon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/4615—Microwave discharges using surface waves
Definitions
- the present invention relates to a surface wave applicator for plasma production, and to a device and method for producing surface wave plasma.
- Surface wave plasmas are a type of high frequency plasma (HF), that is, at a frequency of 1 MHz or less to more than 10 GHz [1] in which the plasma is maintained by a electromagnetic wave (in particular radiofrequency or microwave) propagating along a dielectric tube in contact with the plasma.
- HF high frequency plasma
- the plasma can be generated outside the dielectric tube or inside thereof, or both inside and outside the tube.
- the plasma and the dielectric tube constitute the propagation medium of the microwaves that generate the plasma along the propagation zone.
- the microwave electromagnetic field is called surface because the intensity of the electric field is maximum at the interface between the dielectric tube and the plasma.
- surface wave plasmas are produced in the absence of a static magnetic field, except at low pressure where an axial magnetic field (i.e. in the tube direction) can be applied to improve the radial confinement of the plasma and / or produce plasma excitation at the electron cyclotron resonance.
- the surface wave plasmas are produced in a dielectric tube by a surface electromagnetic wave generated from a gap gap field applicator (or "gap" according to the English terminology), as schematized on the figure 1 .
- the figure 1 illustrates a sectional view of half of a dielectric tube 3 containing a plasma 4.
- the X axis is the axis of revolution of the tube 3.
- electrically conductive elements 2a, 2b which have, in this configuration, main surfaces respectively parallel and perpendicular to the dielectric tube 3.
- the elements 2a and 2b are spaced apart from a gap G, whose width is typically of the order of a few mm.
- An electromagnetic surface wave W is generated from the gap G.
- the electric field has only a radial component, that is to say in the case illustrated in FIG. figure 1 perpendicular to the surface of the conductive element 2a and the thickness of the conductive element 2b.
- the electromagnetic wave W thus propagates in a direction perpendicular to the gap, and substantially symmetrically (waves W1 and W2) on either side of the axis of the gap G (which is perpendicular to the X axis dielectric tube 1).
- the dielectric tube passes through a box (the applicator is then called “surfatron”) or a waveguide (the applicator is then called “surfaguide”) which allows to apply to the tube, over a short length , the microwave electric field that will produce the plasma along which it can propagate.
- a box the applicator is then called “surfatron”
- a waveguide the applicator is then called “surfaguide”
- the Figure 2A illustrates an example of a surfatron; the Figure 2B illustrates an example of a surfaguide. These two figures are extracted from [3].
- the surfatron of the Figure 2A is a cylindrical box closed by a conductive partition 2b.
- the dielectric tube 3 which is perpendicular to the partition 2b, has an axial conductive strip 2a along its entire length.
- the tube 3 is arranged inside the cylindrical box, a gap G being formed between the end of the tube 3 and the conductive partition 2a.
- the surfaguide of the Figure 2B comprises a waveguide GO, which is traversed perpendicularly by the dielectric tube 3, the launch gap G being formed between the wall of the waveguide and the tube.
- the surface wave is symmetrical with respect to the gap.
- the figure 3 illustrates the evolution of the radial and axial components of the electric field of the plasma 4 towards the outside of the dielectric tube 3 (medium A consisting for example of air or of a dielectric), as a function of the distance r in the radial direction to from the Z axis of the tube 3.
- the ordinate axis indicates the intensity of the electrical component of the electromagnetic wave expressed in relative units.
- the impedance matching systems of these devices are also expensive and bulky.
- the plasma is produced on either side of the wave launch gap (by the upstream wave and the downstream wave).
- the range of frequencies accessible to surface wave plasmas is much wider since it starts at less than 1 MHz (the beginning of the radio frequency domain (RF)) and covers the microwave domain up to more than 10 GHz.
- RF radio frequency domain
- An object of the invention is to provide a surface wave applicator that overcomes the aforementioned drawbacks.
- the document WO03 / 103003 discloses a microwave energy applicator in an enclosure whose end is disposed in the wall of the enclosure.
- the ends of the central core and the outer conductor of the coaxial assembly are coplanar.
- the outer conductor at least partially surrounds the dielectric tube beyond the plane of the end of the central core.
- the central core occupies at least partially the interior volume of the dielectric tube beyond the plane of the end of the outer conductor.
- the coaxial assembly further comprises an impedance matching device.
- the length of the dielectric tube inserted in the coaxial assembly is chosen to ensure impedance matching between the impedance of the plasma and the characteristic impedance of the coaxial assembly.
- the coaxial assembly may comprise a circulation circuit of a cooling fluid arranged in the central core and / or in the outer conductor.
- the dielectric tube may comprise a circulation circuit of a cooling dielectric fluid arranged in the interior volume and / or in the thickness of said tube.
- the applicator further comprises a cylindrical permanent magnet whose direction of magnetization is parallel to the axis of the applicator, arranged at the end of the central core.
- the magnetization of said magnets being chosen so as to form a magnetic field capable of providing, in a zone distant from the end of the applicator, an electron cyclotron resonance coupling with the microwave electric field generated by said applicator,
- the outer radius and the magnetization of the annular magnet being further selected so that the magnetic field lines generated by said magnets pass through the electron cyclotron resonance coupling zone in a direction substantially parallel to the axis of the applicator .
- the applicator comprises a confinement tube made of a dielectric material extending concentrically around the dielectric tube, said confinement tube being embedded in the external electrical conductor of the coaxial assembly.
- Another object relates to a device for producing surface wave plasma, comprising an enclosure containing a plasmagenic gas and at least one applicator as described above, in which a part of the inner wall and / or the outer wall of the tube dielectric extending beyond the exit plane of the applicator is in contact with the plasma gas.
- the dielectric tube is sealed and constitutes said chamber containing the plasma gas.
- the dielectric tube is located inside the enclosure.
- the enclosure comprises a confinement tube made of a dielectric material extending concentrically around the dielectric tube, said confinement tube being embedded in the external electrical conductor of the coaxial assembly of the applicator.
- the dielectric tube may be open at its end opposite the coaxial assembly, the plasmagenic gas being in contact with the inner wall and the outer wall of the tube.
- the dielectric tube may be closed at its end opposite the coaxial assembly, the plasmagenic gas being in contact only with the outer wall of the tube.
- the dielectric tube may be closed at its end opposite the coaxial assembly, the inside of said tube being evacuated or filled with a material (solid or fluid) dielectric.
- the chamber may comprise a device for introducing the plasma gas into the chamber and a device for pumping the plasma gas from inside to outside the chamber.
- the central core comprises a conduit for introducing the plasma gas into the chamber.
- the plasma gas pressure inside the chamber is preferably less than 133 Pa when a suitable magnetic field providing electronic cyclotron resonance is applied.
- the electromagnetic wave is a microwave wave.
- the plasma gas pressure is less than 133 Pa and the plasma is produced by electron cyclotron resonance.
- the electromagnetic wave is a radiofrequency wave.
- the coaxial assembly is cooled by a circulation of a cooling fluid inside said assembly.
- the dielectric tube is cooled by circulating a dielectric cooling fluid inside said dielectric tube.
- the figure 4 is a block diagram of a surface wave applicator 1 for plasma production according to the invention.
- Said applicator comprises a coaxial assembly 2 electrically conductive, formed of a central core 20 and an outer tubular conductor 21 surrounding the central core 20 and separated therefrom by an annular volume 22 for propagating an electromagnetic wave W .
- Such a coaxial assembly 2 is known in itself and its design is within the reach of the skilled person.
- a dielectric tube 3 is inserted at the end of the coaxial assembly 2 in the annular volume 22 of propagation of the electromagnetic wave while extending beyond the exit plane of the applicator.
- the applicator output plane is the interface between the coaxial assembly 2 and a volume containing a plasma gas, said output plane constituting a boundary between the applicator and the plasma generated by the electromagnetic wave from said gas plasma.
- the dielectric tube thus comprises a first portion inserted into the annular volume 22 and a second portion protruding from the exit plane of the applicator, whose inner wall and / or the outer wall is likely to be in contact with a plasma gas.
- a plasmagene gas is brought into contact with the tube 3, the plasmagenic gas being able to be located inside and / or outside said tube or on either side of the tube, according to the applications, some examples of which will be described in detail below.
- the tube 3 may be of any dielectric material, which is a medium adapted to the propagation of an electromagnetic wave without significant losses.
- the tube 3 may be silica (SiO 2 ), alumina (Al 2 O 3 ) or aluminum nitride (AlN), without the invention being limited to these materials.
- the tube 3 generally has a circular section and extends in a longitudinal direction X.
- the radius of the tube 3 is typically of the order of one centimeter, that is to say between a few millimeters and a few centimeters depending on the application and the operating conditions.
- the dielectric tube 3 may have a gradual change in its diameter as is the case with some devices using surface wave plasmas.
- the thickness of the tube 3 is generally of the order of one millimeter.
- the thickness of the portion of the tube 3 inserted in the coaxial assembly is chosen so that the tube 3 occupies substantially the entire width of the annular volume 22.
- sealing of the junction between the tube and the annular volume vis-à-vis the plasma gas by any suitable means.
- the length of the tube depends on the intended application.
- the length of the tube 3 is large in front of the diameter of the coaxial applicator (which is of the order of 1 cm) and may, depending on the application, have a length that may range from about 5 cm to 1 cm. meter order.
- the length of the portion of the tube 3 extending beyond the exit plane of the applicator advantageously corresponds to the length on which it is desired to generate the plasma.
- the length of the portion of the extension extending beyond the outlet plane of the applicator greater than or equal to twice the outside diameter of the tube 3 is chosen, so as to produce the plasma essentially along said portion of the tube. tube.
- the tube extends beyond the outlet plane of the applicator over a short length, that is to say typically smaller than the outside diameter of the tube, the plasma is generated directly at the outlet the applicator without creating a surface wave, which corresponds to a situation not covered by the present invention, wherein a plasma sheet is formed in the exit plane of the applicator.
- the tube 3 can be open at its end 33 opposite to the coaxial assembly 2; alternatively, the tube 3 can be closed at this end 33.
- An electromagnetic wave W propagating in the annular volume 22 of the coaxial assembly 2 is introduced into the section of the dielectric tube 3 in the longitudinal direction X of said tube and propagates longitudinally in the thickness of said tube.
- the electromagnetic wave propagates in an electromagnetic transverse mode (TEM), that is to say a mode where the electric field is purely radial.
- TEM electromagnetic transverse mode
- the normal to the metal surface of the central core and the external conductor changes direction, passing from a radial direction to the axial direction, parallel to the X axis.
- the exit plane may consist of the plane defining the end of the central core 20 and / or of the outer conductor 21, the central core and / or the outer conductor 21 being in contact with the plasma gas.
- the ends of the central core 20 and the outer conductor 21 are not necessarily coplanar.
- the exit plane of the applicator is defined as the plane defining the end of the portion of the coaxial assembly which is in contact with the plasma gas, depending on whether the plasma gas is located inside and / or outside the dielectric tube 3.
- the plasma gas is confined inside the dielectric tube 3 and the outer conductor 21 protrudes from the central core 20.
- outlet plane Y of the applicator corresponds to the plane of the end of the central core 20, whatever the position of the end of the outer conductor 21.
- the plasma gas is confined in an enclosure outside the dielectric tube 3, the outer conductor flush with the wall of said enclosure and the central core 20 protruding from the outer conductor 21.
- the output plane Y of the applicator corresponds to the plane of the end of the outer conductor 21 and the wall of the enclosure, whatever the position of the end of the central core 20.
- the invention proposes to launch an electromagnetic wave in the longitudinal direction of said tube from an electromagnetic wave introduced in the section. dielectric tube.
- the efficiency of the system is thus substantially improved since, assuming a perfect impedance matching, all the incident electromagnetic power is introduced and then propagates in the dielectric tube.
- the impedance matching device - which is in itself a device known to those skilled in the art - in the coaxial assembly, as close as possible to the plasma.
- the dielectric tube 3 must be introduced into the coaxial assembly over a length corresponding to a quarter wavelength ( ⁇ / 4) in the dielectric.
- those skilled in the art are able to determine the impedance matching means between a given coaxial structure and a given load impedance.
- an electromagnetic wave in a frequency range covering the radiofrequency (RF) and microwave domains.
- ISM frequencies (acronym for "industrial, scientific and medical) such as 13.56 MHz, 27.12 MHz or 40.68 MHz for the RF domain, and 433 MHz, 2.45 GHz or 5.80 GHz for the microwave field.
- the power applied may be between 1 or a few watts (for example lighting) and a few hundred watts, or more (eg treatment of gaseous effluents).
- said plasmagenic gas may be located inside and / or outside the dielectric tube 3.
- the plasma gas may be any gas whose components make it possible to generate a plasma under the effect of the electromagnetic wave propagating in the dielectric tube 3.
- the plasma gas may thus be conventionally constituted by one or more rare gases (in particular argon) and mercury.
- gases such as nitrogen, oxygen, halogenated gases, or any other gas having physicochemical properties of interest for targeted application can also be envisaged.
- the plasmagenic gas is confined inside the dielectric tube 3, which is sealed at its end 33 opposite to the coaxial assembly 2.
- the figure 5 illustrates an example of such an embodiment.
- the plasma gas 4 is enclosed in the dielectric tube 3 which is sealed at one of its ends around the central core 20 and at its other end 33 by a sealed wall.
- the outer conductor 21 may at least partially surround the dielectric tube 3, beyond the exit plane of the applicator which, in this embodiment, corresponds to the end of the central core 20.
- This configuration makes it possible, for example, to form a shield at the level of the exit plane of the applicator and thus to prevent the transmission of the electromagnetic radiation to the outside.
- the plasma gas 4 is confined in an enclosure (not shown) and the dielectric tube 3 is itself inserted into said enclosure.
- This embodiment is particularly advantageous insofar as the plasma generated outside the dielectric tube, the plasma absorbs the electromagnetic radiation.
- a particular example is that of lighting, where the bulb constitutes said enclosure containing the plasma gas, the dielectric tube being arranged inside the bulb.
- the tube 3 is open at its end 33 and thus communicates with the volume of the chamber, plasma can also be formed inside said tube 3.
- the central core 20 can occupy at least partly the inside of the dielectric tube 3, beyond the exit plane of the applicator which, in this embodiment, corresponds to the end of the outer conductor 21.
- This embodiment is particularly advantageous for cooling the central core 20 by means of an internal circulation of water or any heat transfer fluid in the case of a heat pipe)
- the sealing of the plasma volume can be achieved by known techniques.
- the sealing of the plasma volume vis-à-vis the applicator can be ensured by the establishment of O-rings between the dielectric tube and the central core and the outer conductor of the coaxial assembly.
- the dielectric tube may be brazed to the central core and the outer conductor of the coaxial assembly.
- the dielectric tube may be sealed, near its end inserted into the annular volume of the coaxial assembly, by a plug of dielectric material.
- the dielectric tube 3 can be inserted inside a sealed enclosure, the outer conductor of the coaxial assembly preferably flush with the inner wall of the said enclosure (as shown in figure 8 for example).
- the applicator operates in static mode, that is to say without plasma gas flow.
- the applicator can be implemented in dynamic mode, that is to say in an enclosure containing a device for pumping plasma gas from outside to inside the chamber.
- FIG 8 This particular embodiment is illustrated in figure 8 , where a pumping device 5 has been schematized in the enclosure.
- the core may comprise a conduit 23 for introducing plasma gas into the chamber.
- This embodiment of the invention is advantageous when a chemical reaction is carried out in the plasma (for example for the treatment of effluents), since a renewal of the plasma gas and the evacuation of the products of the reaction are then necessary.
- This cooling can be effected by circulating a suitable fluid (for example, water) inside the central core and / or the outer conductor of the coaxial assembly.
- a suitable fluid for example, water
- surface wave plasmas are produced in the absence of a static magnetic field, except at low pressure where an axial magnetic field (in the tube direction) can be applied to improve the radial confinement of the plasma (decrease in plasma losses on the walls of the tube) and / or produce a plasma excitation at the electron cyclotron resonance.
- a first simplified embodiment, illustrated at figure 9 can be obtained by inserting at the end of the central core 20 of the coaxial structure a cylindrical magnet 200 of axial magnetization.
- Another embodiment makes it possible to benefit from the electronic cyclotron resonance (ECR) mode.
- ECR electronic cyclotron resonance
- ECR electron cyclotron resonance
- said annular magnet has an inner radius substantially equal to that of the outer conductor 21, which corresponds to the outer radius of the annular volume 22 of propagation of microwaves, noted R.
- the annular magnet may have an inner radius slightly greater than that of the outer conductor and outer radius less than that of the outer conductor and be housed in an annular housing provided at the end of the outer conductor.
- the magnets can be made integral with the coaxial assembly by any appropriate means.
- the magnetization of the cylindrical magnet 200 and the annular magnet 201 is chosen so as to form a magnetic field suitable for providing, in a zone distant from the plane Y output of the applicator, an electron cyclotron resonance coupling with the microwave electric field generated by the applicator.
- the cylindrical magnet 200 and the annular magnet 201 make it possible to generate magnetic field lines that pass through the electron cyclotron resonance coupling zone in a direction substantially parallel to the X axis of the applicator.
- This effect can be obtained by a judicious choice of the outer radius and the magnetization of the annular magnet 201.
- the electron cyclotron resonance zone is delimited, in the radial direction, by the zone in which the microwave electric field is the strongest, the use of an annular magnet whose outside radius is much greater than the radius of this zone makes it possible to obtain a zone of ECR substantially parallel to the output plane Y of the applicator.
- This zone of strong electric field is considered to extend over a radius of the order of twice the radius of the applicator.
- the annular magnet 201 has an outer radius greater than the radius of the strong electric field area, the ECR region is substantially parallel to the exit plane of the applicator over its entire radius 2R range.
- the field lines that start from the pole located at the exit plane of the applicator to reach the opposite pole remain substantially parallel to the axis X of the applicator during their crossing of the zone Z RCE of radius 2R, including the periphery of this zone.
- the annular magnet has the effect of "straightening" the field lines at the periphery of the ECR area.
- the electromagnetic field which is maximum at the interface between the plasma and the dielectric tube along which said plasma is generated, can thus be absorbed by the annular volume of gas extending around said tube.
- This embodiment is illustrated on the figure 11A .
- the dielectric tube for confining the plasma is designated by the reference 6.
- the end of the tube 6 opposite to the coaxial assembly is closed, so that the tube 6 constitutes an enclosure capable of enclosing plasma gas.
- the dielectric confinement tube may constitute the envelope of a light bulb.
- the dielectric tube 3 along which the plasma is generated can be open or closed at its opposite end to the coaxial assembly.
- the tube 3 is open so that the inside of the tube 3 communicates with the outside of said tube, which makes it possible to generate plasma both inside and outside the tube 3, said plasma being confined externally by the tube 6.
- the tube 3 is closed and evacuated or filled with a dielectric material, for example in liquid form, the plasmagenic gas being contained in the confinement tube 6, outside the tube 3. thus plasma in an annular volume between the tubes 3 and 6.
- a dielectric material for example in liquid form
- the tube 3 is closed and contains the plasma gas, the tube 6 not containing plasma gas.
- plasma is formed in the tube 3 only.
- the dielectric confinement tube 6 is advantageously embedded in the outer tubular conductor 21 of the coaxial assembly, to a depth p.
- This embedding has the effect of promoting the formation of the two axial and radial components of the electric field HF in the exit plane of said confinement tube, as occurs for the dielectric tube 3 along which the plasma is generated.
- the depth p is advantageously substantially equal to (2k + 1) ⁇ / 4, where k is an integer and ⁇ is the wavelength of the electromagnetic wave propagating within the dielectric tube 3 inserted into the coaxial set.
- k 0 is chosen, ie a embedment depth of the confinement tube of the order of ⁇ / 4.
- the external electrical conductor may have a shoulder 21a protruding from the outlet plane Y of the applicator.
- This shoulder makes it possible to prevent the electromagnetic wave from propagating radially outside the dielectric confinement tube 6 in the exit plane.
- the figure 11 B presents for comparison a situation in which the confinement tube 6 is simply in contact with the exit surface of the external electrical conductor 21.
- Applicators according to the various embodiments of the invention can be advantageously used, unitarily or in combination to form extended sources, in multiple applications.
- the invention makes it possible to remedy the disadvantages of the existing devices described above.
- the applicator has a design and manufacture substantially simpler than existing devices, and adapted to a wide range of frequencies (RF and microwave).
- the radial size of the applicator is determined by the overall size of the coaxial assembly (typically the external diameter of the outer tubular conductor), which is generally substantially smaller than that of tangential wave launch devices. such as surfatron and surfaguide illustrated in Figures 2A and 2B .
- the diameter of a coaxial applicator is of the order of 1 to 2 cm while the dimensions of a surfaguide are of the order of the wavelength of the electromagnetic wave.
- the applicator works with conventional impedance matching devices, depending on the frequency of the electromagnetic wave employed, and therefore does not require the implementation of bulky and expensive devices.
- the surface wave being launched in a single direction (that is, the direction of the end 33 of the dielectric tube 3 opposite the coaxial assembly 2), there is no loss of energy.
- the energy efficiency of the applicator is therefore optimal.
- the applicator can be readily adapted to cyclotron electron resonance (ECR) coupling to form and maintain the plasma at low pressure.
- ECR cyclotron electron resonance
Description
La présente invention concerne un applicateur d'onde de surface pour la production de plasma, ainsi qu'un dispositif et un procédé de production de plasma d'onde de surface.The present invention relates to a surface wave applicator for plasma production, and to a device and method for producing surface wave plasma.
Les plasmas d'onde de surface sont un type de plasma à haute fréquence (HF, c'est-à-dire à une fréquence comprise entre 1 MHz ou moins à plus de 10 GHz [1] dans lequel le plasma est entretenu par une onde électromagnétique (notamment, radiofréquence ou micro-onde) se propageant le long d'un tube diélectrique en contact avec le plasma.Surface wave plasmas are a type of high frequency plasma (HF), that is, at a frequency of 1 MHz or less to more than 10 GHz [1] in which the plasma is maintained by a electromagnetic wave (in particular radiofrequency or microwave) propagating along a dielectric tube in contact with the plasma.
L'article de M. Moisan et al [2] fournit une revue approfondie de la bibliographie dans ce domaine.The article by M. Moisan et al [2] provides a thorough review of the bibliography in this area.
Selon les cas, le plasma peut être généré à l'extérieur du tube diélectrique ou à l'intérieur de celui-ci, ou encore à la fois à l'intérieur et à l'extérieur du tube.Depending on the case, the plasma can be generated outside the dielectric tube or inside thereof, or both inside and outside the tube.
Dans cette technologie, le plasma et le tube diélectrique constituent le support de propagation des micro-ondes qui génèrent le plasma le long de la zone de propagation.In this technology, the plasma and the dielectric tube constitute the propagation medium of the microwaves that generate the plasma along the propagation zone.
Le champ électromagnétique micro-onde est dit de surface car l'intensité du champ électrique est maximale à l'interface entre le tube diélectrique et le plasma.The microwave electromagnetic field is called surface because the intensity of the electric field is maximum at the interface between the dielectric tube and the plasma.
De manière générale, les plasmas à onde de surface sont produits en l'absence de champ magnétique statique, sauf à basse pression où un champ magnétique axial (c'est-à-dire dans la direction du tube) peut être appliqué pour améliorer le confinement radial du plasma et/ou produire une excitation du plasma à la résonance cyclotronique électronique.In general, surface wave plasmas are produced in the absence of a static magnetic field, except at low pressure where an axial magnetic field (i.e. in the tube direction) can be applied to improve the radial confinement of the plasma and / or produce plasma excitation at the electron cyclotron resonance.
Généralement, les plasmas à onde de surface sont produits dans un tube diélectrique par une onde électromagnétique de surface générée à partir d'un applicateur de champ à interstice de lancement (ou « gap » selon la terminologie anglo-saxonne), tel que schématisé sur la
La
L'axe X est l'axe de révolution du tube 3.The X axis is the axis of revolution of the
Autour du tube sont agencés des éléments électriquement conducteurs 2a, 2b qui présentent, dans cette configuration, des surfaces principales respectivement parallèle et perpendiculaire au tube diélectrique 3.Around the tube are arranged electrically
Par ailleurs, les éléments 2a et 2b sont distants d'un interstice G, dont la largeur est typiquement de l'ordre de quelques mm.Moreover, the
Une onde électromagnétique de surface W est générée à partir de l'interstice G.An electromagnetic surface wave W is generated from the gap G.
A la surface des éléments conducteurs 2a et 2b, le champ électrique présente exclusivement une composante radiale, c'est-à-dire dans le cas illustré à la
L'onde électromagnétique W se propage donc dans une direction perpendiculaire à l'interstice, et sensiblement symétriquement (ondes W1 et W2) de part et d'autre de l'axe de l'interstice G (qui est perpendiculaire à l'axe X du tube diélectrique 1).The electromagnetic wave W thus propagates in a direction perpendicular to the gap, and substantially symmetrically (waves W1 and W2) on either side of the axis of the gap G (which is perpendicular to the X axis dielectric tube 1).
Différents dispositifs, ou applicateurs, permettant de lancer une onde électromagnétique de surface dans le tube diélectrique ont déjà été proposés.Different devices, or applicators, for launching a surface electromagnetic wave in the dielectric tube have already been proposed.
Dans ces dispositifs, le tube diélectrique traverse une boîte (l'applicateur est alors dénommé « surfatron ») ou un guide d'onde (l'applicateur est alors dénommé « surfaguide ») qui permet d'appliquer au tube, sur une courte longueur, le champ électrique micro-onde qui produira le plasma le long duquel il pourra se propager.In these devices, the dielectric tube passes through a box (the applicator is then called "surfatron") or a waveguide (the applicator is then called "surfaguide") which allows to apply to the tube, over a short length , the microwave electric field that will produce the plasma along which it can propagate.
La
Le surfatron de la
Le tube diélectrique 3, qui est perpendiculaire à la cloison 2b, présente une bande conductrice axiale 2a sur toute sa longueur.The
Le tube 3 est agencé à l'intérieur de la boîte cylindrique, un interstice G étant ménagé entre l'extrémité du tube 3 et la cloison conductrice 2a.The
L'introduction de la puissance électromagnétique est schématisée par le repère P.The introduction of electromagnetic power is shown schematically by the reference P.
Le surfaguide de la
La plupart de ces dispositifs, qui permettent de lancer une onde de surface à symétrie azimutale (mode m = 0), possèdent soit des moyens d'adaptation d'impédance qui leur sont propres (comme dans le cas du surfatron), soit des moyens indépendants (cas du surfaguide).Most of these devices, which make it possible to launch a surface wave with azimuth symmetry (mode m = 0), have either impedance matching means of their own (as in the case of surfatron), or means independent (case of surfaguide).
Le plus souvent, comme illustré à la
La
L'axe des ordonnées indique l'intensité de la composante électrique de l'onde électromagnétique exprimée en unités relatives.The ordinate axis indicates the intensity of the electrical component of the electromagnetic wave expressed in relative units.
On observe sur la
Les dispositifs actuels présentent cependant un certain nombre d'inconvénients.Current devices, however, have a number of disadvantages.
En premier lieu, la plupart des applicateurs (également appelés lanceurs) d'onde de surface (ou « surface wave launcher » selon la terminologie anglo-saxonne) présentent une grande complexité de conception et de fabrication, d'où un coût relativement élevé.First, most applicators (also called launchers) surface wave (or "surface wave launcher" in the English terminology) have a high complexity of design and manufacturing, resulting in a relatively high cost.
D'autre part, comme on peut le voir aux
Cet encombrement est très préjudiciable en particulier dans les cas où une pluralité de décharges est envisagée.This size is very detrimental especially in cases where a plurality of discharges is envisaged.
Les systèmes d'adaptation d'impédance de ces dispositifs sont également coûteux et encombrants.The impedance matching systems of these devices are also expensive and bulky.
Par ailleurs, dans la plupart des applicateurs, en l'absence de dispositif annexe, tel qu'un réflecteur, le plasma est produit de part et d'autre de l'interstice de lancement de l'onde (par l'onde amont et l'onde aval).Moreover, in most applicators, in the absence of an auxiliary device, such as a reflector, the plasma is produced on either side of the wave launch gap (by the upstream wave and the downstream wave).
Or, en général, on ne souhaite produire du plasma que dans l'une de ces directions, d'où une puissance perdue (jusqu'à un facteur 2) dans de nombreux cas et donc un bilan énergétique peu favorable.However, in general, it is desired to produce plasma in one of these directions, resulting in lost power (up to a factor of 2) in many cases and therefore an unfavorable energy balance.
Enfin, certains dispositifs sont adaptés à une fréquence donnée (comme dans le cas du surfaguide) et d'autres ne peuvent couvrir, avec la même configuration, qu'une gamme limitée de fréquences.Finally, some devices are adapted to a given frequency (as in the case of surfaguide) and others can cover, with the same configuration, a limited range of frequencies.
Or, la gamme des fréquences accessibles aux plasmas à onde de surface est beaucoup plus vaste puisqu'elle débute à moins de 1 MHz (début du domaine radiofréquence (RF)) et couvre le domaine micro-onde jusqu'à plus de 10 GHz.However, the range of frequencies accessible to surface wave plasmas is much wider since it starts at less than 1 MHz (the beginning of the radio frequency domain (RF)) and covers the microwave domain up to more than 10 GHz.
Un but de l'invention est de proposer un applicateur d'onde de surface qui permette de remédier aux inconvénients susmentionnés.An object of the invention is to provide a surface wave applicator that overcomes the aforementioned drawbacks.
Le document
Conformément à l'invention, il est proposé un applicateur d'onde de surface pour la production de plasma, comprenant :
- un ensemble coaxial électriquement conducteur, formé d'une âme centrale et d'un conducteur tubulaire externe entourant l'âme centrale et séparé de celle-ci par un volume annulaire de propagation d'une onde électromagnétique, et
- un tube diélectrique inséré, à l'extrémité dudit ensemble coaxial, dans ledit volume annulaire de propagation de l'onde électromagnétique et s'étendant au-delà du plan de sortie de l'applicateur sur une longueur au moins égale au double du diamètre extérieur dudit tube, de sorte qu'une onde électromagnétique se propageant dans l'ensemble coaxial est introduite dans la section dudit tube diélectrique selon la direction longitudinale dudit tube afin de produire un plasma à onde de surface le long de la partie du tube diélectrique dont la paroi interne et/ou la paroi externe est en contact avec un gaz plasmagène.
- an electrically conductive coaxial assembly formed of a central core and an outer tubular conductor surrounding the central core and separated therefrom by an annular volume of propagation of an electromagnetic wave, and
- a dielectric tube inserted at the end of said coaxial assembly into said annular volume of propagation of the electromagnetic wave and extending beyond the plane of leaving the applicator over a length at least equal to twice the outside diameter of said tube, so that an electromagnetic wave propagating in the coaxial assembly is introduced into the section of said dielectric tube in the longitudinal direction of said tube in order to produce a surface wave plasma along the portion of the dielectric tube whose inner wall and / or the outer wall is in contact with a plasma gas.
Selon un mode de réalisation, les extrémités de l'âme centrale et du conducteur externe de l'ensemble coaxial sont coplanaires.According to one embodiment, the ends of the central core and the outer conductor of the coaxial assembly are coplanar.
Selon un autre mode de réalisation, le conducteur externe entoure au moins partiellement le tube diélectrique au-delà du plan de l'extrémité de l'âme centrale.According to another embodiment, the outer conductor at least partially surrounds the dielectric tube beyond the plane of the end of the central core.
Selon un autre mode de réalisation, l'âme centrale occupe au moins partiellement le volume intérieur du tube diélectrique au-delà du plan de l'extrémité du conducteur externe.According to another embodiment, the central core occupies at least partially the interior volume of the dielectric tube beyond the plane of the end of the outer conductor.
De manière particulièrement avantageuse, l'ensemble coaxial comporte en outre un dispositif d'adaptation d'impédance.Particularly advantageously, the coaxial assembly further comprises an impedance matching device.
Selon une forme d'exécution avantageuse de l'invention, la longueur du tube diélectrique insérée dans l'ensemble coaxial est choisie pour assurer l'adaptation d'impédance entre l'impédance du plasma et l'impédance caractéristique de l'ensemble coaxial.According to an advantageous embodiment of the invention, the length of the dielectric tube inserted in the coaxial assembly is chosen to ensure impedance matching between the impedance of the plasma and the characteristic impedance of the coaxial assembly.
Par ailleurs, l'ensemble coaxial peut comprendre un circuit de circulation d'un fluide de refroidissement agencé dans l'âme centrale et/ou dans le conducteur externe.Furthermore, the coaxial assembly may comprise a circulation circuit of a cooling fluid arranged in the central core and / or in the outer conductor.
D'autre part, le tube diélectrique peut comprendre un circuit de circulation d'un fluide diélectrique de refroidissement agencé dans le volume intérieur et/ou dans l'épaisseur dudit tube.On the other hand, the dielectric tube may comprise a circulation circuit of a cooling dielectric fluid arranged in the interior volume and / or in the thickness of said tube.
Selon un mode de réalisation, l'applicateur comprend en outre un aimant permanent cylindrique dont la direction d'aimantation est parallèle à l'axe de l'applicateur, agencé à l'extrémité de l'âme centrale.According to one embodiment, the applicator further comprises a cylindrical permanent magnet whose direction of magnetization is parallel to the axis of the applicator, arranged at the end of the central core.
Selon un autre mode de réalisation, l'applicateur comprend en outre :
- un aimant permanent cylindrique dont la direction d'aimantation est parallèle à l'axe de l'applicateur, agencé à l'extrémité de l'âme centrale et,
- au moins un aimant permanent annulaire dont la direction d'aimantation est parallèle à l'axe de l'applicateur et de même sens que l'aimantation de l'aimant cylindrique central, agencé autour de l'extrémité du conducteur externe,
- a cylindrical permanent magnet whose direction of magnetization is parallel to the axis of the applicator, arranged at the end of the central core and,
- at least one annular permanent magnet whose direction of magnetization is parallel to the axis of the applicator and in the same direction as the magnetization of the central cylindrical magnet, arranged around the end of the outer conductor,
l'aimantation desdits aimants étant choisie de sorte à former un champ magnétique propre à procurer, dans une zone distante de l'extrémité de l'applicateur, un couplage de résonance cyclotronique électronique avec le champ électrique micro-onde généré par ledit applicateur,the magnetization of said magnets being chosen so as to form a magnetic field capable of providing, in a zone distant from the end of the applicator, an electron cyclotron resonance coupling with the microwave electric field generated by said applicator,
le rayon extérieur et l'aimantation de l'aimant annulaire étant en outre choisis de sorte que les lignes de champ magnétique générées par lesdits aimants traversent la zone de couplage de résonance cyclotronique électronique selon une direction sensiblement parallèle à l'axe de l'applicateur.the outer radius and the magnetization of the annular magnet being further selected so that the magnetic field lines generated by said magnets pass through the electron cyclotron resonance coupling zone in a direction substantially parallel to the axis of the applicator .
Selon un mode de réalisation, l'applicateur comprend un tube de confinement en un matériau diélectrique s'étendant de manière concentrique autour du tube diélectrique, ledit tube de confinement étant encastré dans le conducteur électrique externe de l'ensemble coaxial.According to one embodiment, the applicator comprises a confinement tube made of a dielectric material extending concentrically around the dielectric tube, said confinement tube being embedded in the external electrical conductor of the coaxial assembly.
Un autre objet concerne un dispositif de production de plasma à onde de surface, comprenant une enceinte contenant un gaz plasmagène et au moins un applicateur tel que décrit plus haut, dans lequel une partie de la paroi interne et/ou de la paroi externe du tube diélectrique s'étendant au-delà du plan de sortie de l'applicateur est en contact avec le gaz plasmagène.Another object relates to a device for producing surface wave plasma, comprising an enclosure containing a plasmagenic gas and at least one applicator as described above, in which a part of the inner wall and / or the outer wall of the tube dielectric extending beyond the exit plane of the applicator is in contact with the plasma gas.
Selon une forme d'exécution, le tube diélectrique est étanche et constitue ladite enceinte contenant le gaz plasmagène.According to one embodiment, the dielectric tube is sealed and constitutes said chamber containing the plasma gas.
Selon une variante, le tube diélectrique est situé à l'intérieur de l'enceinte.According to one variant, the dielectric tube is located inside the enclosure.
Selon une forme d'exécution de l'invention, l'enceinte comprend un tube de confinement en un matériau diélectrique s'étendant de manière concentrique autour du tube diélectrique, ledit tube de confinement étant encastré dans le conducteur électrique externe de l'ensemble coaxial de l'applicateur.According to one embodiment of the invention, the enclosure comprises a confinement tube made of a dielectric material extending concentrically around the dielectric tube, said confinement tube being embedded in the external electrical conductor of the coaxial assembly of the applicator.
De manière particulièrement avantageuse, la profondeur d'encastrement dudit tube diélectrique de confinement est égale à (2k + 1) λ/4, où k est un nombre entier, λ est la longueur d'onde de l'onde électromagnétique se propageant au sein du tube diélectrique inséré dans l'ensemble coaxial, ladite longueur d'onde λ étant donnée par la formule λ = λ0 / ε1/2, où λ0 est la longueur d'onde de l'onde électromagnétique se propageant dans le vide ou dans l'air et ε est la permittivité relative du matériau diélectrique du tube de confinement par rapport à la permittivité du videIn a particularly advantageous manner, the embedment depth of said dielectric confinement tube is equal to (2k + 1) λ / 4, where k is an integer, λ is the wavelength of the electromagnetic wave propagating within a dielectric tube inserted in the coaxial assembly, said wavelength λ being given by the formula λ = λ 0 / ε 1/2 , where λ 0 is the wavelength of the electromagnetic wave propagating in the vacuum or in the air and ε is the relative permittivity of the dielectric material of the confinement tube with respect to the permittivity of the vacuum
Le tube diélectrique peut être ouvert à son extrémité opposée à l'ensemble coaxial, le gaz plasmagène étant en contact avec la paroi interne et la paroi externe du tube.The dielectric tube may be open at its end opposite the coaxial assembly, the plasmagenic gas being in contact with the inner wall and the outer wall of the tube.
De manière alternative, le tube diélectrique peut être fermé à son extrémité opposée à l'ensemble coaxial, le gaz plasmagène étant en contact uniquement avec la paroi externe du tube.Alternatively, the dielectric tube may be closed at its end opposite the coaxial assembly, the plasmagenic gas being in contact only with the outer wall of the tube.
Selon une autre variante, le tube diélectrique peut être fermé à son extrémité opposée à l'ensemble coaxial, l'intérieur dudit tube étant mis sous vide ou rempli d'un matériau (solide ou fluide) diélectrique.According to another variant, the dielectric tube may be closed at its end opposite the coaxial assembly, the inside of said tube being evacuated or filled with a material (solid or fluid) dielectric.
Par ailleurs, l'enceinte peut comprendre un dispositif d'introduction du gaz plasmagène dans l'enceinte et d'un dispositif de pompage du gaz plasmagène de l'intérieur vers l'extérieur de l'enceinte.Furthermore, the chamber may comprise a device for introducing the plasma gas into the chamber and a device for pumping the plasma gas from inside to outside the chamber.
Selon une forme particulière d'exécution, l'âme centrale comprend un conduit d'introduction du gaz plasmagène dans l'enceinte.According to a particular embodiment, the central core comprises a conduit for introducing the plasma gas into the chamber.
La pression du gaz plasmagène à l'intérieur de l'enceinte est de préférence inférieure à 133 Pa lorsqu'un champ magnétique adapté procurant une résonance cyclotronique électronique est appliqué.The plasma gas pressure inside the chamber is preferably less than 133 Pa when a suitable magnetic field providing electronic cyclotron resonance is applied.
Enfin, un autre objet se rapporte à un procédé de production de plasma d'onde de surface le long d'un tube diélectrique dont la paroi interne et/ou la paroi externe est en contact avec un gaz plasmagène, caractérisé en ce qu'il comprend :
- la propagation d'une onde électromagnétique dans un ensemble coaxial électriquement conducteur, formé d'une âme centrale et d'un conducteur externe entourant l'âme centrale et séparé de celle-ci par un volume annulaire de propagation de l'onde électromagnétique, et
- l'introduction de ladite onde électromagnétique dans la section dudit tube diélectrique selon la direction longitudinale dudit tube, ledit tube diélectrique étant inséré, à l'extrémité dudit ensemble coaxial, dans le volume annulaire de propagation de l'onde électromagnétique et s'étendant au-delà du plan de sortie de l'ensemble coaxial sur une longueur au moins égale au double du diamètre extérieur dudit tube.
- propagating an electromagnetic wave in an electrically conductive coaxial assembly formed of a central core and an outer conductor surrounding the central core and separated therefrom by an annular volume of propagation of the electromagnetic wave, and
- introducing said electromagnetic wave into the section of said dielectric tube in the longitudinal direction of said tube, said dielectric tube being inserted at the end of said coaxial assembly into the annular volume of propagation of the electromagnetic wave and extending to the output plane of the coaxial assembly over a length at least equal to twice the outside diameter of said tube.
Selon une forme de mise en oeuvre du procédé, l'onde électromagnétique est une onde micro-onde.According to one form of implementation of the method, the electromagnetic wave is a microwave wave.
De manière optionnelle, la pression du gaz plasmagène est inférieure à 133 Pa et l'on produit le plasma par résonance cyclotronique électronique.Optionally, the plasma gas pressure is less than 133 Pa and the plasma is produced by electron cyclotron resonance.
Selon une autre forme d'exécution du procédé, l'onde électromagnétique est une onde radiofréquence.According to another embodiment of the method, the electromagnetic wave is a radiofrequency wave.
De manière avantageuse, on refroidit l'ensemble coaxial par une circulation d'un fluide de refroidissement à l'intérieur dudit ensemble.Advantageously, the coaxial assembly is cooled by a circulation of a cooling fluid inside said assembly.
Eventuellement, on refroidit le tube diélectrique par une circulation d'un fluide diélectrique de refroidissement à l'intérieur dudit tube diélectrique.Optionally, the dielectric tube is cooled by circulating a dielectric cooling fluid inside said dielectric tube.
D'autres caractéristiques et avantages de l'invention ressortiront de la description détaillée qui va suivre, en référence aux dessins annexés sur lesquels :
- la
figure 1 est un schéma de principe d'un applicateur d'onde de surface conventionnel, - les
figures 2A et 2B présentent respectivement des illustrations d'un surfatron et d'un surfaguide appartenant à l'état de la technique, - la
figure 3 est un graphe illustrant l'évolution des composantes radiale et axiale du champ électrique du plasma vers l'extérieur du tube diélectrique, - la
figure 4 est un schéma de principe d'un applicateur d'onde de surface selon un premier mode de réalisation de l'invention, - la
figure 5 est un schéma de principe d'un applicateur d'onde de surface selon un deuxième mode de réalisation de l'invention (production de plasma à l'intérieur du tube diélectrique), - la
figure 6 est un schéma de principe d'un applicateur d'onde de surface selon un troisième mode de réalisation de l'invention (production de plasma à l'extérieur du tube diélectrique), - la
figure 7 présente un exemple de mode de réalisation permettant d'obtenir une adaptation d'impédance entre l'impédance du plasma et l'impédance caractéristique de la ligne coaxiale, - la
figure 8 est un schéma de principe d'un dispositif de production de plasma selon une forme d'exécution particulière de l'invention, correspondant à la production de plasma en régime dynamique, impliquant une introduction de gaz et un pompage, - la
figure 9 est un schéma de principe d'une variante d'un applicateur d'onde de surface selon l'invention, dans laquelle on applique en outre un champ magnétique au moyen d'un aimant permanent agencé à l'extrémité de l'âme centrale, - la
figure 10 est un schéma de principe d'une variante d'un applicateur d'onde de surface selon l'invention, dans laquelle on applique en outre un champ magnétique au moyen d'un premier aimant permanent agencé à l'extrémité de l'âme centrale et d'un second aimant permanent annulaire agencé à l'extrémité du conducteur externe, - la
figure 11A est un schéma de principe d'un applicateur d'onde de surface selon un autre mode de réalisation de l'invention (confinement du plasma produit à l'extérieur du tube diélectrique) ; lafigure 11B est un schéma de principe d'une variante moins avantageuse de lafigure 11 A .
- the
figure 1 is a block diagram of a conventional surface wave applicator, - the
Figures 2A and 2B respectively present illustrations of a surfatron and a surfaguide belonging to the state of the art, - the
figure 3 is a graph illustrating the evolution of the radial and axial components of the electric field of the plasma towards the outside of the dielectric tube, - the
figure 4 is a block diagram of a surface wave applicator according to a first embodiment of the invention, - the
figure 5 is a block diagram of a surface wave applicator according to a second embodiment of the invention (production of plasma inside the dielectric tube), - the
figure 6 is a block diagram of a surface wave applicator according to a third embodiment of the invention (production of plasma outside the dielectric tube), - the
figure 7 presents an exemplary embodiment for obtaining an impedance matching between the impedance of the plasma and the characteristic impedance of the coaxial line, - the
figure 8 is a block diagram of a plasma generating device according to a particular embodiment of the invention, corresponding to the plasma production in dynamic regime, involving a gas introduction and a pumping, - the
figure 9 is a block diagram of a variant of a surface wave applicator according to the invention, in which a magnetic field is also applied by means of a permanent magnet arranged at the end of the central core, - the
figure 10 is a block diagram of a variant of a surface wave applicator according to the invention, in which a magnetic field is also applied by means of a first permanent magnet arranged at the end of the central core and a second annular permanent magnet arranged at the end of the outer conductor, - the
figure 11A is a block diagram of a surface wave applicator according to another embodiment of the invention (confining the plasma produced outside the dielectric tube); theFigure 11B is a schematic diagram of a less advantageous variant of thefigure 11 A .
La
Ledit applicateur comprend un ensemble coaxial 2 électriquement conducteur, formé d'une âme centrale 20 et d'un conducteur tubulaire externe 21 entourant l'âme centrale 20 et séparé de celle-ci par un volume annulaire 22 de propagation d'une onde électromagnétique W.Said applicator comprises a
Un tel ensemble coaxial 2 est connu en lui-même et sa conception est à la portée de l'homme du métier.Such a
Par ailleurs, un tube diélectrique 3 est inséré, à l'extrémité de l'ensemble coaxial 2, dans le volume annulaire 22 de propagation de l'onde électromagnétique tout en s'étendant au-delà du plan de sortie de l'applicateur.Furthermore, a
On appelle plan de sortie de l'applicateur l'interface entre l'ensemble coaxial 2 et un volume contenant un gaz plasmagène, ledit plan de sortie constituant une frontière entre l'applicateur et le plasma généré par l'onde électromagnétique à partir dudit gaz plasmagène.The applicator output plane is the interface between the
Le tube diélectrique comprend donc une première portion insérée dans le volume annulaire 22 et une seconde portion dépassant du plan de sortie de l'applicateur, dont la paroi interne et/ou la paroi externe est susceptible d'être en contact avec un gaz plasmagène.The dielectric tube thus comprises a first portion inserted into the
Pour la génération de plasma, un gaz plasmagène est mis en contact avec le tube 3, le gaz plasmagène pouvant se situer à l'intérieur et/ou à l'extérieur dudit tube ou encore de part et d'autre du tube, selon les applications, dont quelques exemples seront décrits en détail plus bas.For plasma generation, a plasmagene gas is brought into contact with the
Le tube 3 peut être en tout matériau diélectrique, qui est un milieu adapté à la propagation d'une onde électromagnétique sans pertes significatives.The
De préférence, le tube 3 peut être en silice (SiO2), en alumine (Al2O3) ou en nitrure d'aluminium (AIN), sans que l'invention soit limitée à ces matériaux.Preferably, the
Le tube 3 présente généralement une section circulaire et s'étend selon une direction longitudinale X.The
Le rayon du tube 3 est typiquement de l'ordre du centimètre, c'est-à-dire compris entre quelques millimètres et quelques centimètres selon l'application et les conditions opératoires.The radius of the
Au-delà du plan de sortie de l'applicateur, le tube diélectrique 3 peut présenter une modification progressive de son diamètre comme c'est le cas de certains dispositifs utilisant des plasmas à onde de surface.Beyond the exit plane of the applicator, the
L'épaisseur du tube 3 est généralement de l'ordre du millimètre.The thickness of the
L'épaisseur de la partie du tube 3 insérée dans l'ensemble coaxial est choisie de sorte que le tube 3 occupe sensiblement toute la largeur du volume annulaire 22.The thickness of the portion of the
Avantageusement, on assure l'étanchéité de la jonction entre le tube et le volume annulaire vis-à-vis du gaz plasmagène par tout moyen approprié.Advantageously, sealing of the junction between the tube and the annular volume vis-à-vis the plasma gas by any suitable means.
La longueur du tube est fonction de l'application visée.The length of the tube depends on the intended application.
Typiquement, la longueur du tube 3 est grande devant le diamètre de l'applicateur coaxial (qui est de l'ordre du cm) et peut, suivant l'application, présenter une longueur pouvant aller de l'ordre de 5 cm à de l'ordre du mètre.Typically, the length of the
La longueur de la portion du tube 3 s'étendant au-delà du plan de sortie de l'applicateur correspond avantageusement à la longueur sur laquelle on souhaite générer le plasma.The length of the portion of the
De préférence, on choisit la longueur de la portion du s'étendant au-delà du plan de sortie de l'applicateur supérieure ou égale au double du diamètre extérieur du tube 3, de sorte à produire le plasma essentiellement le long de ladite portion du tube.Preferably, the length of the portion of the extension extending beyond the outlet plane of the applicator greater than or equal to twice the outside diameter of the
Dans le cas contraire, si le tube s'étend au-delà du plan de sortie de l'applicateur sur une faible longueur, c'est-à-dire typiquement inférieure au diamètre extérieur du tube, le plasma est généré directement à la sortie de l'applicateur sans création d'une onde de surface, ce qui correspond à une situation non visée par la présente invention, dans laquelle on forme une nappe de plasma dans le plan de sortie de l'applicateur.In the opposite case, if the tube extends beyond the outlet plane of the applicator over a short length, that is to say typically smaller than the outside diameter of the tube, the plasma is generated directly at the outlet the applicator without creating a surface wave, which corresponds to a situation not covered by the present invention, wherein a plasma sheet is formed in the exit plane of the applicator.
Comme on le verra plus bas, le tube 3 peut être ouvert à son extrémité 33 opposée à l'ensemble coaxial 2 ; de manière alternative, le tube 3 peut être fermé à cette extrémité 33.As will be seen below, the
Une onde électromagnétique W se propageant dans le volume annulaire 22 de l'ensemble coaxial 2 est introduite dans la section du tube diélectrique 3 selon la direction longitudinale X dudit tube et se propage longitudinalement dans l'épaisseur dudit tube.An electromagnetic wave W propagating in the
Dans la partie coaxiale du dispositif, l'onde électromagnétique se propage selon un mode transversal électromagnétique (TEM), c'est-à-dire un mode où le champ électrique est purement radial.In the coaxial part of the device, the electromagnetic wave propagates in an electromagnetic transverse mode (TEM), that is to say a mode where the electric field is purely radial.
Dans le plan Y de sortie de l'applicateur 1, la normale à la surface métallique de l'âme centrale et du conducteur externe change de direction, en passant d'une direction radiale à la direction axiale, parallèle à l'axe X.In the output Y plane of the
Il apparaît donc une composante de champ électrique axiale (en plus de la composante radiale), ce qui constitue une situation très favorable au lancement d'une onde de surface (qui comporte à la fois une composante axiale et une composante radiale (cf.
Selon les configurations de l'applicateur et du gaz plasmagène, le plan de sortie peut consister en le plan définissant l'extrémité de l'âme centrale 20 et/ou du conducteur externe 21, l'âme centrale et/ou le conducteur externe 21 étant en contact avec le gaz plasmagène.Depending on the configurations of the applicator and the plasma gas, the exit plane may consist of the plane defining the end of the
Dans le mode de réalisation illustré à la
Cependant, comme on le verra plus bas, les extrémités de l'âme centrale 20 et du conducteur externe 21 ne sont pas nécessairement coplanaires.However, as will be seen below, the ends of the
Dans ce cas, le plan de sortie de l'applicateur est défini comme étant le plan définissant l'extrémité de la partie de l'ensemble coaxial qui est au contact du gaz plasmagène, selon que le gaz plasmagène est situé à l'intérieur et/ou à l'extérieur du tube diélectrique 3.In this case, the exit plane of the applicator is defined as the plane defining the end of the portion of the coaxial assembly which is in contact with the plasma gas, depending on whether the plasma gas is located inside and / or outside the
Ainsi, dans le mode de réalisation illustré à la
Dans ce cas, le plan de sortie Y de l'applicateur correspond au plan de l'extrémité de l'âme centrale 20, quelle que soit la position de l'extrémité du conducteur externe 21.In this case, the outlet plane Y of the applicator corresponds to the plane of the end of the
Inversement, dans le mode de réalisation illustré à la
Dans ce cas, le plan de sortie Y de l'applicateur correspond au plan de l'extrémité du conducteur externe 21 et de la paroi de l'enceinte, quelle que soit la position de l'extrémité de l'âme centrale 20.In this case, the output plane Y of the applicator corresponds to the plane of the end of the
En raison du changement de direction de la normale à la surface métallique dans le plan de sortie Y de l'applicateur, une composante de champ électrique axial apparaît, ce qui constitue une situation très favorable au lancement d'une onde de surface (qui comporte à la fois une composante axiale et une composante radiale) dans la section du tube diélectrique 3 au-delà du plan de sortie Y de l'applicateur.Due to the change of direction from the normal to the metal surface in the Y output plane of the applicator, an axial electric field component appears, which is a very favorable situation for launching a surface wave (which comprises both an axial component and a radial component) in the section of the
Ainsi, contrairement aux techniques existantes, dans lesquelles une onde électromagnétique est lancée dans le tube diélectrique tangentiellement à celui-ci, l'invention propose de lancer une onde électromagnétique selon la direction longitudinale dudit tube à partir d'une onde électromagnétique introduite dans la section du tube diélectrique.Thus, unlike existing techniques, in which an electromagnetic wave is launched into the dielectric tube tangentially to it, the invention proposes to launch an electromagnetic wave in the longitudinal direction of said tube from an electromagnetic wave introduced in the section. dielectric tube.
L'efficacité du système est ainsi sensiblement améliorée puisque, dans l'hypothèse d'une adaptation d'impédance parfaite, toute la puissance électromagnétique incidente est introduite puis se propage dans le tube diélectrique.The efficiency of the system is thus substantially improved since, assuming a perfect impedance matching, all the incident electromagnetic power is introduced and then propagates in the dielectric tube.
Pour obtenir une adaptation d'impédance optimale, il est souhaitable de placer le dispositif d'adaptation d'impédance - qui est en lui-même un dispositif connu de l'homme du métier- dans l'ensemble coaxial, le plus près possible du plasma.To achieve optimum impedance matching, it is desirable to place the impedance matching device - which is in itself a device known to those skilled in the art - in the coaxial assembly, as close as possible to the plasma.
A titre d'exemple, la
Dans ce cas, le tube diélectrique 3 doit être introduit dans l'ensemble coaxial sur une longueur correspondant à un quart de longueur d'onde (λ/4) dans le diélectrique.In this case, the
De manière plus générale, l'homme du métier est à même de déterminer les moyens d'adaptation d'impédance entre une structure coaxiale donnée et une impédance de charge donnée.More generally, those skilled in the art are able to determine the impedance matching means between a given coaxial structure and a given load impedance.
Pour la mise en oeuvre de l'invention, on peut employer une onde électromagnétique dans une gamme de fréquences couvrant les domaines radiofréquence (RF) et micro-onde.For the implementation of the invention, it is possible to use an electromagnetic wave in a frequency range covering the radiofrequency (RF) and microwave domains.
Au sein de cette gamme, qui est très étendue, on peut notamment utiliser les fréquences ISM (acronyme de « industrielles, scientifiques et médicales) telles que 13,56 MHz, 27,12 MHz ou 40,68 MHz pour le domaine RF, et 433 MHz, 2,45 GHz ou 5,80 GHz pour le domaine micro-onde.Within this range, which is very extensive, it is possible to use the ISM frequencies (acronym for "industrial, scientific and medical) such as 13.56 MHz, 27.12 MHz or 40.68 MHz for the RF domain, and 433 MHz, 2.45 GHz or 5.80 GHz for the microwave field.
Naturellement, cette liste n'est pas limitative et l'homme du métier pourra choisir toute autre fréquence dans le domaine RF (c'est-à-dire entre 1 et 100 MHz) ou dans le domaine micro-onde (c'est-à-dire entre 100 MHz et 10 GHz) sans pour autant sortir du cadre de la présente invention.Naturally, this list is not limiting and the person skilled in the art can choose any other frequency in the RF range (that is to say between 1 and 100 MHz) or in the microwave domain (that is, ie between 100 MHz and 10 GHz) without departing from the scope of the present invention.
Selon les applications, la puissance appliquée peut être comprise entre 1 ou quelques watts (cas de l'éclairage par exemple) et quelques centaines de watts, voire davantage (cas du traitement des effluents gazeux par exemple).Depending on the application, the power applied may be between 1 or a few watts (for example lighting) and a few hundred watts, or more (eg treatment of gaseous effluents).
L'homme du métier est à même de déterminer la puissance adéquate en fonction de l'application envisagée.The skilled person is able to determine the appropriate power depending on the intended application.
Sous l'effet de l'onde électromagnétique se propageant dans le tube diélectrique 3, du plasma est généré dans le gaz plasmagène qui est au contact du tube 3.Under the effect of the electromagnetic wave propagating in the
Comme mentionné précédemment, ledit gaz plasmagène peut être situé à l'intérieur et/ou à l'extérieur du tube diélectrique 3.As mentioned above, said plasmagenic gas may be located inside and / or outside the
Le gaz plasmagène peut être n'importe quel gaz dont les composants permettent de générer un plasma sous l'effet de l'onde électromagnétique se propageant dans le tube diélectrique 3.The plasma gas may be any gas whose components make it possible to generate a plasma under the effect of the electromagnetic wave propagating in the
Dans les applications relatives à l'éclairage, le gaz plasmagène peut ainsi être constitué, de manière conventionnelle, d'un ou plusieurs gaz rares (notamment, de l'argon) et de mercure.In applications relating to lighting, the plasma gas may thus be conventionally constituted by one or more rare gases (in particular argon) and mercury.
A titre d'exemples non limitatifs, des gaz comme l'azote, l'oxygène, les gaz halogénés, ou tout autre gaz présentant des propriétés physico-chimiques intéressantes en vue d'une application ciblée peuvent aussi être envisagés.As non-limiting examples, gases such as nitrogen, oxygen, halogenated gases, or any other gas having physicochemical properties of interest for targeted application can also be envisaged.
Selon une forme d'exécution de l'invention, le gaz plasmagène est confiné à l'intérieur du tube diélectrique 3, lequel est scellé à son extrémité 33 opposée à l'ensemble coaxial 2.According to one embodiment of the invention, the plasmagenic gas is confined inside the
Le tube diélectrique 3, une fois inséré dans l'ensemble coaxial 2, forme donc une enceinte étanche pour la génération de plasma.The
La
Sur celle-ci, le gaz plasmagène 4 est enfermé dans le tube diélectrique 3 qui est scellé, à l'une de ses extrémités, autour de l'âme centrale 20 et, à son autre extrémité 33, par une paroi étanche.On it, the
Comme on peut le voir sur cette figure, le conducteur externe 21 peut entourer au moins en partie le tube diélectrique 3, au-delà du plan de sortie de l'applicateur qui, dans ce mode de réalisation, correspond à l'extrémité de l'âme centrale 20.As can be seen in this figure, the
Cette configuration permet par exemple de constituer un blindage au niveau du plan de sortie de l'applicateur et d'éviter ainsi la transmission du rayonnement électromagnétique vers l'extérieur.This configuration makes it possible, for example, to form a shield at the level of the exit plane of the applicator and thus to prevent the transmission of the electromagnetic radiation to the outside.
Selon une autre forme d'exécution de l'invention, illustrée sur la
On peut ainsi former du plasma à l'extérieur du tube diélectrique 3.It is thus possible to form plasma outside the
Cette forme d'exécution est particulièrement avantageuse dans la mesure où le plasma généré à l'extérieur du tube diélectrique, le plasma absorbe le rayonnement électromagnétique.This embodiment is particularly advantageous insofar as the plasma generated outside the dielectric tube, the plasma absorbs the electromagnetic radiation.
Un exemple particulier est celui de l'éclairage, où l'ampoule constitue ladite enceinte contenant le gaz plasmagène, le tube diélectrique étant agencé à l'intérieur de l'ampoule.A particular example is that of lighting, where the bulb constitutes said enclosure containing the plasma gas, the dielectric tube being arranged inside the bulb.
Si le tube 3 est ouvert à son extrémité 33 et communique ainsi avec le volume de l'enceinte, il peut se former du plasma également à l'intérieur dudit tube 3.If the
De manière optionnelle, comme on peut le voir sur la
Ce mode de réalisation est particulièrement avantageux pour refroidir l'âme centrale 20 au moyen d'une circulation intérieure d'eau ou d'un fluide caloporteur quelconque dans le cas d'un caloduc)This embodiment is particularly advantageous for cooling the
Concrètement, l'étanchéité du volume de plasma peut être réalisée par des techniques connues.Concretely, the sealing of the plasma volume can be achieved by known techniques.
Ainsi, l'étanchéité du volume de plasma vis-à-vis de l'applicateur peut être assurée par la mise en place de joints toriques entre le tube diélectrique et l'âme centrale et le conducteur externe de l'ensemble coaxial.Thus, the sealing of the plasma volume vis-à-vis the applicator can be ensured by the establishment of O-rings between the dielectric tube and the central core and the outer conductor of the coaxial assembly.
De manière alternative ou complémentaire, le tube diélectrique peut être brasé sur l'âme centrale et le conducteur externe de l'ensemble coaxial.Alternatively or additionally, the dielectric tube may be brazed to the central core and the outer conductor of the coaxial assembly.
De manière optionnelle, le tube diélectrique peut être scellé, au voisinage de son extrémité insérée dans le volume annulaire de l'ensemble coaxial, par un bouchon en matériau diélectrique.Optionally, the dielectric tube may be sealed, near its end inserted into the annular volume of the coaxial assembly, by a plug of dielectric material.
Par ailleurs, lorsque le plasma doit être généré à l'extérieur du tube diélectrique, le tube diélectrique 3 peut être inséré à l'intérieur d'une enceinte étanche, le conducteur externe de l'ensemble coaxial affleurant de préférence avec la paroi intérieure de ladite enceinte (comme illustré à la
L'étanchéité entre l'ensemble coaxial et la paroi de l'enceinte qu'il traverse est assurée par tout moyen approprié, tel que des joints toriques, un brasage, etc.The seal between the coaxial assembly and the wall of the enclosure through which it passes is ensured by any appropriate means, such as O-rings, brazing, etc.
Dans le cas d'application à l'éclairage, l'applicateur fonctionne en régime statique, c'est-à-dire sans flux de gaz plasmagène.In the case of application to lighting, the applicator operates in static mode, that is to say without plasma gas flow.
De manière alternative, l'applicateur peut être mis en oeuvre en régime dynamique, c'est-à-dire dans une enceinte contenant un dispositif de pompage de gaz plasmagène de l'extérieur vers l'intérieur de l'enceinte.Alternatively, the applicator can be implemented in dynamic mode, that is to say in an enclosure containing a device for pumping plasma gas from outside to inside the chamber.
Ce mode de réalisation particulier est illustré à la
De manière optionnelle (illustrée également à la
Cette forme d'exécution de l'invention est avantageuse lorsque l'on met en oeuvre une réaction chimique dans le plasma (par exemple pour le traitement d'effluents), puisqu'un renouvellement du gaz plasmagène et l'évacuation des produits de la réaction sont alors nécessaires.This embodiment of the invention is advantageous when a chemical reaction is carried out in the plasma (for example for the treatment of effluents), since a renewal of the plasma gas and the evacuation of the products of the reaction are then necessary.
Grâce au dispositif de pompage 5 et, le cas échéant, au conduit 23, on peut ainsi contrôler la pression de travail ou le débit de gaz en régime dynamique.Thanks to the
Dans le cas de l'utilisation de puissances électromagnétiques élevées, il peut être nécessaire de refroidir l'applicateur.In the case of using high electromagnetic power, it may be necessary to cool the applicator.
Ce refroidissement peut être effectué par circulation d'un fluide adéquat (par exemple, de l'eau) à l'intérieur de l'âme centrale et/ou du conducteur externe de l'ensemble coaxial.This cooling can be effected by circulating a suitable fluid (for example, water) inside the central core and / or the outer conductor of the coaxial assembly.
Il est également possible de faire circuler un fluide de refroidissement diélectrique dans l'espace 22 de propagation des micro-ondes.It is also possible to circulate a dielectric cooling fluid in the
La définition et la réalisation des canaux permettant cette circulation est connue en elle-même et à la portée de l'homme du métier selon les contraintes techniques rencontrées.The definition and the realization of the channels allowing this circulation is known in itself and within the reach of the person skilled in the art according to the technical constraints encountered.
Lorsque l'on travaille à de très fortes puissances, il peut être nécessaire de refroidir également le tube diélectrique.When working at very high power, it may be necessary to cool the dielectric tube as well.
Ceci peut être réalisé en faisant circuler un fluide diélectrique dans l'épaisseur dudit tube, et/ou à l'intérieur du tube diélectrique (dans le cas où le plasma est produit à l'extérieur du tube)This can be achieved by circulating a dielectric fluid in the thickness of said tube, and / or inside the dielectric tube (in the case where the plasma is produced outside the tube)
De manière générale, les plasmas à onde de surface sont produits en l'absence de champ magnétique statique, sauf à basse pression où un champ magnétique axial (dans la direction du tube) peut être appliqué pour améliorer le confinement radial du plasma (diminution des pertes de plasma sur les parois du tube) et/ou produire une excitation du plasma à la résonance cyclotronique électronique.In general, surface wave plasmas are produced in the absence of a static magnetic field, except at low pressure where an axial magnetic field (in the tube direction) can be applied to improve the radial confinement of the plasma (decrease in plasma losses on the walls of the tube) and / or produce a plasma excitation at the electron cyclotron resonance.
Un premier mode de réalisation simplifié, illustré à la
Un autre mode de réalisation, encore plus avantageux, permet de bénéficier du mode de résonance cyclotronique électronique (RCE).Another embodiment, even more advantageous, makes it possible to benefit from the electronic cyclotron resonance (ECR) mode.
A la résonance cyclotronique électronique, les électrons sont accélérés très efficacement par le champ électrique micro-onde si l'intensité du champ magnétique (qui peut être produit par des bobines ou des aimants permanents) est telle que la fréquence de giration des électrons dans le champ magnétique est égale à la fréquence f0 du champ électrique micro-onde, soit :
En l'absence de collisions, la trajectoire des électrons dits rapides, ainsi accélérés à la résonance cyclotronique électronique dans le champ magnétique, s'enroule alors suivant un mouvement hélicoïdal autour d'une ligne de champ magnétique.In the absence of collisions, the trajectory of so-called fast electrons, thus accelerated to electron cyclotron resonance in the magnetic field, then winds in a helical motion around a magnetic field line.
Pour mettre en oeuvre ce mode de résonance, l'applicateur comprend, comme illustré à la
- un aimant
permanent cylindrique 200, agencé à l'extrémité de l'âme centrale 20 et dont la direction d'aimantation (schématisée par une flèche) est parallèle à l'axe X ; ledit aimant présente un rayon sensiblement identique à celui de l'âme centrale 20 (concrètement, l'aimant cylindrique peut présenter un rayon légèrement inférieur à celui de l'âme centrale et être logé dans un logement cylindrique ménagé à l'extrémité de l'âme centrale) ; un aimant annulaire 201, agencé à l'extrémité du conducteur externe 21 de l'ensemble coaxial et dont la direction d'aimantation (schématisée par une flèche) est parallèle à l'axe X et de même sens que celle de l'aimant cylindrique 200.
- a cylindrical
permanent magnet 200, arranged at the end of thecentral core 20 and whose magnetization direction (represented by an arrow) is parallel to the axis X; said magnet has a radius substantially identical to that of the central core 20 (concretely, the cylindrical magnet may have a radius slightly less than that of the central core and be housed in a cylindrical housing provided at the end of the central soul); - an
annular magnet 201, arranged at the end of theouter conductor 21 of the coaxial assembly and whose magnetization direction (represented by an arrow) is parallel to the axis X and in the same direction as that of thecylindrical magnet 200.
De préférence, ledit aimant annulaire présente un rayon intérieur sensiblement égal à celui du conducteur externe 21, qui correspond au rayon extérieur du volume annulaire 22 de propagation des micro-ondes, noté R. Concrètement, l'aimant annulaire peut présenter un rayon intérieur légèrement supérieur à celui du conducteur externe et un rayon extérieur inférieur à celui du conducteur externe et être logé dans un logement annulaire ménagé à l'extrémité du conducteur externe.Preferably, said annular magnet has an inner radius substantially equal to that of the
Les aimants peuvent être rendus solidaires de l'ensemble coaxial par tout moyen approprié.The magnets can be made integral with the coaxial assembly by any appropriate means.
L'aimantation de l'aimant cylindrique 200 et de l'aimant annulaire 201 est choisie de sorte à former un champ magnétique propre à procurer, dans une zone distante du plan de sortie Y de l'applicateur, un couplage de résonance cyclotronique électronique avec le champ électrique micro-onde généré par l'applicateur.The magnetization of the
Ceci suppose que l'aimantation desdits aimants 200 et 201 soit suffisante pour générer, à distance du plan de sortie Y de l'applicateur, un champ magnétique présentant l'intensité B0 permettant la résonance cyclotronique électronique en fonction de la fréquence micro-onde prévue, selon la formule (1) ci-dessus.This assumes that the magnetization of said
Pour une excitation du plasma à la résonance cyclotronique électronique par des micro-ondes à 2,45 GHz, la condition de résonance (B0 = 875 gauss) peut être obtenue par des aimants permanents conventionnels, par exemple en samarium-cobalt.For excitation of the electron cyclotron resonance plasma by microwaves at 2.45 GHz, the resonance condition (B 0 = 875 gauss) can be obtained by conventional permanent magnets, for example samarium-cobalt.
D'autre part, l'aimant cylindrique 200 et l'aimant annulaire 201 permettent de générer des lignes de champ magnétique qui traversent la zone de couplage de résonance cyclotronique électronique selon une direction sensiblement parallèle à l'axe X de l'applicateur.On the other hand, the
Cet effet peut être obtenu par un choix judicieux du rayon extérieur et de l'aimantation de l'aimant annulaire 201.This effect can be obtained by a judicious choice of the outer radius and the magnetization of the
En effet, plus l'aimant annulaire 201 présente un rayon extérieur important, plus les lignes d'iso-intensité du champ magnétique généré à distance de l'applicateur restent parallèles au plan de sortie Y de l'applicateur sur un rayon important.In fact, the larger the outside radius of the
La zone de résonance cyclotronique électronique étant délimitée, dans la direction radiale, par la zone dans laquelle le champ électrique micro-onde est le plus fort, l'utilisation d'un aimant annulaire dont le rayon extérieur est bien supérieur au rayon de cette zone permet l'obtention d'une zone de RCE sensiblement parallèle au plan de sortie Y de l'applicateur.Since the electron cyclotron resonance zone is delimited, in the radial direction, by the zone in which the microwave electric field is the strongest, the use of an annular magnet whose outside radius is much greater than the radius of this zone makes it possible to obtain a zone of ECR substantially parallel to the output plane Y of the applicator.
On considère que cette zone de champ électrique fort s'étend sur un rayon de l'ordre du double du rayon de l'applicateur.This zone of strong electric field is considered to extend over a radius of the order of twice the radius of the applicator.
Par conséquent, si l'aimant annulaire 201 présente un rayon extérieur supérieur au rayon de la zone de champ électrique fort, la zone de RCE est sensiblement parallèle au plan de sortie de l'applicateur sur toute son étendue de rayon 2R.Therefore, if the
D'autre part, du fait de la présence de l'aimant annulaire 201 ayant un rayon extérieur supérieur à 2R, les lignes de champ qui partent du pôle situé au niveau du plan de sortie de l'applicateur pour rejoindre le pôle opposé, restent sensiblement parallèles à l'axe X de l'applicateur pendant leur traversée de la zone ZRCE de rayon 2R, y compris à la périphérie de cette zone.On the other hand, because of the presence of the
En d'autres termes, l'aimant annulaire a pour effet de « redresser » les lignes de champ à la périphérie de la zone de RCE.In other words, the annular magnet has the effect of "straightening" the field lines at the periphery of the ECR area.
Selon un autre mode de réalisation de l'invention, dans le cas où l'on souhaite produire un plasma d'onde de surface annulaire le long de la paroi extérieure du tube diélectrique, il peut être avantageux de confiner ledit plasma au moyen d'un tube diélectrique de confinement présentant un diamètre supérieur à celui du tube le long duquel on produit le plasma, et disposé de manière concentrique à celui-ci.According to another embodiment of the invention, in the case where it is desired to produce an annular surface wave plasma along the outer wall of the dielectric tube, it may be advantageous to confine said plasma by means of a tube dielectric confinement having a diameter greater than that of the tube along which the plasma is produced, and arranged concentrically therewith.
Le champ électromagnétique, qui est maximal à l'interface entre le plasma et le tube diélectrique le long duquel on génère ledit plasma, peut ainsi être absorbé par le volume annulaire de gaz s'étendant autour dudit tube.The electromagnetic field, which is maximum at the interface between the plasma and the dielectric tube along which said plasma is generated, can thus be absorbed by the annular volume of gas extending around said tube.
Ceci permet de limiter le rayonnement électromagnétique vers l'extérieur.This limits the electromagnetic radiation to the outside.
Ce mode de réalisation est illustré sur la
Le tube diélectrique de confinement du plasma est désigné par le repère 6.The dielectric tube for confining the plasma is designated by the
L'extrémité du tube 6 opposée à l'ensemble coaxial est fermée, de sorte que le tube 6 constitue une enceinte susceptible de renfermer du gaz plasmagène.The end of the
Ainsi, selon un exemple particulier de réalisation, le tube diélectrique de confinement peut constituer l'enveloppe d'une ampoule d'éclairage.Thus, according to a particular embodiment, the dielectric confinement tube may constitute the envelope of a light bulb.
Le tube diélectrique 3 le long duquel on génère le plasma peut être ouvert ou fermé à son extrémité opposée à l'ensemble coaxial.The
On peut ainsi obtenir trois configurations de génération du plasma.It is thus possible to obtain three plasma generation configurations.
Dans un premier cas, le tube 3 est ouvert de sorte que l'intérieur du tube 3 communique avec l'extérieur dudit tube, ce qui permet de générer du plasma à la fois à l'intérieur et à l'extérieur du tube 3, ledit plasma étant confiné extérieurement par le tube 6.In a first case, the
Dans un second cas, le tube 3 est fermé et mis sous vide ou rempli d'un matériau diélectrique, par exemple sous forme liquide, le gaz plasmagène étant contenu dans le tube de confinement 6, à l'extérieur du tube 3. On forme ainsi du plasma dans un volume annulaire compris entre les tubes 3 et 6.In a second case, the
Enfin, dans un troisième cas, le tube 3 est fermé et contient le gaz plasmagène, le tube 6 ne contenant pas de gaz plasmagène. On forme ainsi du plasma dans le tube 3 uniquement.Finally, in a third case, the
Le tube diélectrique de confinement 6 est avantageusement encastré dans le conducteur tubulaire externe 21 de l'ensemble coaxial, sur une profondeur p.The
Cet encastrement a pour effet de favoriser la formation des deux composantes axiale et radiale du champ électrique HF dans le plan de sortie dudit tube de confinement, comme cela se produit pour le tube diélectrique 3 le long duquel on génère le plasma.This embedding has the effect of promoting the formation of the two axial and radial components of the electric field HF in the exit plane of said confinement tube, as occurs for the
La profondeur p est de manière avantageuse sensiblement égale à (2k+1) λ/4, où k est un nombre entier et λ est la longueur d'onde de l'onde électromagnétique se propageant au sein du tube diélectrique 3 inséré dans l'ensemble coaxial.The depth p is advantageously substantially equal to (2k + 1) λ / 4, where k is an integer and λ is the wavelength of the electromagnetic wave propagating within the
On obtient ainsi un ventre (maximum) de champ électrique dans le plan de sortie de l'applicateur.This gives a belly (maximum) electric field in the output plane of the applicator.
Ladite longueur d'onde λ est donnée par la formule :
De préférence, pour favoriser la compacité du dispositif, on choisit k = 0, soit une profondeur d'encastrement du tube de confinement de l'ordre de λ/4.Preferably, to favor the compactness of the device, k = 0 is chosen, ie a embedment depth of the confinement tube of the order of λ / 4.
Comme on peut le voir sur la
Cet épaulement permet d'éviter que l'onde électromagnétique ne se propage radialement à l'extérieur du tube diélectrique de confinement 6 dans le plan de sortie.This shoulder makes it possible to prevent the electromagnetic wave from propagating radially outside the
La
Dans ce cas, seule la composante axiale du champ électrique HF, normale à la surface du conducteur électrique externe 21, est présente, ce qui est peu favorable au lancement d'une onde de surface ; au contraire, cette configuration favorise la propagation radiale de l'onde, à la surface du conducteur externe 21.In this case, only the axial component of the electric field HF, normal to the surface of the external
Les applicateurs conformes aux différents modes de réalisation de l'invention peuvent être avantageusement utilisés, unitairement ou associés pour former des sources étendues, dans de multiples applications.Applicators according to the various embodiments of the invention can be advantageously used, unitarily or in combination to form extended sources, in multiple applications.
Parmi celles-ci, on peut citer de manière non limitative l'éclairage, la formation de sources de plasma étendues pour effectuer des traitements de surface (par association de plusieurs applicateurs dans une même enceinte), la gravure pour la microélectronique et les nanotechnologies, le traitement des effluents gazeux, la stérilisation plasma, les sources d'espèces neutres, les sources de photons, ou encore la propulsion ionique.Among these, there may be mentioned in a nonlimiting manner lighting, the formation of plasma sources extended to perform surface treatments (by combining several applicators in the same enclosure), etching for microelectronics and nanotechnologies, the treatment of gaseous effluents, plasma sterilization, sources of neutral species, photon sources, or ion propulsion.
L'invention permet en effet de remédier aux inconvénients des dispositifs existants décrits plus haut.The invention makes it possible to remedy the disadvantages of the existing devices described above.
En particulier, l'applicateur présente une conception et une fabrication sensiblement plus simples que les dispositifs existants, et adaptées à une vaste gamme de fréquences (RF et micro-ondes).In particular, the applicator has a design and manufacture substantially simpler than existing devices, and adapted to a wide range of frequencies (RF and microwave).
Par ailleurs, l'encombrement radial de l'applicateur est déterminé par l'encombrement de l'ensemble coaxial (typiquement, le diamètre extérieur du conducteur tubulaire externe), qui est généralement sensiblement plus faible que celui des dispositifs à lancement d'onde tangentiel tels que le surfatron et le surfaguide illustrés aux
A titre d'exemple, le diamètre d'un applicateur coaxial est de l'ordre de 1 à 2 cm alors que les dimensions d'un surfaguide sont de l'ordre de la longueur d'onde de l'onde électromagnétique.For example, the diameter of a coaxial applicator is of the order of 1 to 2 cm while the dimensions of a surfaguide are of the order of the wavelength of the electromagnetic wave.
D'autre part, l'applicateur fonctionne avec les dispositifs d'adaptation d'impédance conventionnels, en fonction de la fréquence de l'onde électromagnétique employée, et ne nécessite donc pas la mise en oeuvre de dispositifs encombrants et coûteux.On the other hand, the applicator works with conventional impedance matching devices, depending on the frequency of the electromagnetic wave employed, and therefore does not require the implementation of bulky and expensive devices.
L'onde de surface étant lancée dans une seule direction (à savoir, la direction de l'extrémité 33 du tube diélectrique 3 opposée à l'ensemble coaxial 2), il n'y a pas de déperdition d'énergie.The surface wave being launched in a single direction (that is, the direction of the
L'efficacité énergétique de l'applicateur est donc optimale.The energy efficiency of the applicator is therefore optimal.
Enfin, comme mentionné plus haut, l'applicateur peut être aisément adapté à un couplage par résonance électronique cyclotronique (RCE) pour former et maintenir le plasma à basse pression.Finally, as mentioned above, the applicator can be readily adapted to cyclotron electron resonance (ECR) coupling to form and maintain the plasma at low pressure.
Les modifications structurelles à apporter à l'applicateur sont en effet minimes, puisqu'il suffit, comme on l'a vu plus haut, de disposer des aimants permanents à l'extrémité de l'âme centrale et du conducteur externe de l'ensemble coaxial.The structural modifications to be made to the applicator are indeed minimal, since it suffices, as we saw above, to have permanent magnets at the end of the central core and the outer conductor of the assembly. coaxial.
-
[1]
M. Moisan, J. Pelletier, Physique des plasmas collisionnels, EDP Sciences, Les Ulis, France (2006), pp 405-408 M. Moisan, J. Pelletier, Collisional Plasma Physics, EDP Sciences, Les Ulis, France (2006), pp 405-408 -
[2]
M. Moisan, A. Shivarova, A.W. Trivelpiece, « Experimental investigations of the propagation of surface waves along a plasma column », Plasma Physics, Vol. 24, No. 11, pp. 1331-14000, 1982 M. Moisan, A. Shivarova, AW Trivelpiece, "Experimental investigations of the propagation of surface waves along a plasma column," Plasma Physics, Vol. 24, No. 11, pp. 1331-14000, 1982 -
[3]
M. Moisan, Z. Zakrzewski, Surface wave plasma sources, dans "Microwave Excited Plasmas", édité par M. Moisan et J. Pelletier, Elsevier, Amsterdam (novembre 1992) Chapitre 5, pp 123-180, Fig. 5.13 M. Moisan, Z. Zakrzewski, Surface wave plasma sources, in "Microwave Excited Plasmas", edited by M. Moisan and J. Pelletier, Elsevier, Amsterdam (November 1992) Chapter 5, pp 123-180, Fig. 5.13 -
[4]
M. Moisan, J. Margot, Z. Zakrzewski, Surface wave plasma sources, dans "High Density Plasma Sources", édité par Oleg A. Popov, Noyes Publication, Park Ridge, New Jersey (1995), Chap 5, pp 191-250 M. Moisan, J. Margot, Z. Zakrzewski, Surface Wave Plasma Sources, in "High Density Plasma Sources", edited by Oleg A. Popov, Noyes Publication, Park Ridge, New Jersey (1995), Chap 5, pp. 191- 250
Claims (19)
- A surface wave applicator (1) for plasma production, including:- an electrically conductive coaxial assembly (2), consisting of a central core (20) and of an outer tubular conductor (21) surrounding the central core (20) and separated therefrom by an annular volume (22) for propagation of an electromagnetic wave (W), and- a dielectric tube (3) inserted, at the end of said coaxial assembly (2), into said annular volume (22) for propagation of the electromagnetic wave,said applicator being characterized in that the dielectric tube extends beyond the exit plane (Y) of the applicator for a length at least equal to twice the outer diameter of said tube (3), so that the electromagnetic wave (W) propagating in the coaxial assembly (2) is introduced into the section of said dielectric tube (3) in the longitudinal direction (X) of said tube (3) so as to produce a surface wave plasma along the portion of the dielectric tube the inner wall (30) and/or the outer wall (31) whereof is in contact with a plasma gas (4).
- The applicator according to Claim 1, characterized in that the ends of the central core (20) and of the outer conductor (21) of the coaxial assembly (2) are coplanar.
- The applicator according to Claim 1, characterized in that the outer conductor (21) surrounds at least partially the dielectric tube (3) beyond the plane of the end of the central core (20).
- The applicator according to Claim 1, characterized in that the central core (20) occupies at least partially the interior volume of the dielectric tube (3) beyond the plane of the end of the outer conductor (21).
- The applicator according to one of Claims 1 to 4, characterized in that the coaxial assembly comprises an impedance-matching device, the length of the dielectric tube (3) inserted into the coaxial assembly (2) is chosen so as to provide impedance matching between the impedance of the plasma (Zp) and the characteristic impedance (Zc) of the coaxial assembly (2).
- The applicator according to one of Claims 1 to 5, characterized in that the coaxial assembly (2) includes a circuit for circulating a cooling fluid provided in the central core (20) and/or in the outer conductor (21) and/or the dielectric tube (3) includes a circuit for circulating a dielectric cooling fluid provided inside or inside the thickness of said tube.
- The applicator according to one of Claims 1 to 6, characterized in that it further includes a cylindrical permanent magnet with its magnetization direction parallel to the axis of the applicator, positioned at the end of the central core.
- The applicator according to one of Claims 1 to 6, characterized in that it further includes:- a cylindrical permanent magnet with its magnetization direction parallel to the axis of the applicator, positioned at the end of the central core, and- at least one annular permanent magnet with its magnetization direction parallel to the axis of the applicator and concurrent with the magnetization of the central cylindrical magnet, positioned around the end of the outer conductor,the magnetization of said magnets being chosen so as to form a magnetic field suitable for obtaining, in a region remote from the end of the applicator, electron cyclotron resonance coupling with the microwave electric field generated by said applicator,
the outer radius and the magnetization of the annular magnet also being selected so that the magnetic field lines generated by said magnets pass through the electron cyclotron resonance coupling region in a direction substantially parallel to the axis of the applicator. - The applicator according to one of Claims 1 to 8, characterized in that it includes a confinement tube (6) made of a dielectric material extending concentrically about the dielectric tube (3), said confinement tube (6) being embedded in the outer electrical conductor (21) of the coaxial assembly.
- A surface wave plasma production device, including an enclosure containing a plasma gas (4) and at least one applicator (1) according to one of Claims 1 to 9, wherein a portion of the inner wall (30) and/or of the outer wall (31) of the dielectric tube (3) extending beyond the exit plane of the applicator is in contact with the plasma gas (4).
- The device according to Claim 10, characterized in that the dielectric tube (3) is located inside the enclosure.
- The device according to Claim 11, characterized in that the enclosure includes a confinement tube (6) made of a dielectric material extending concentrically about the dielectric tube (3), said confinement tube being embedded into the outer electrical conductor (21) of the coaxial assembly of the applicator.
- The device according to Claim 12, characterized in that the depth (p) of embedment of said dielectric confinement tube (6) is equal to (2k + 1) λ/4, where k is an integer, λ is the wavelength of the electromagnetic wave propagating within the dielectric tube (6) inserted into the coaxial assembly, said wavelength (λ) being given by the formula λ = λ0 / ε1/2, where λ0 is the wavelength of the electromagnetic wave propagating in a vacuum or in air and ε is the relative permittivity of the dielectric material of the confinement tube (6) relative to the permittivity of a vacuum.
- The device according to one of Claims 11 to 13, characterized in that the dielectric tube (3) is open at its end (33) opposite to the coaxial assembly (2), the plasma gas (4) being in contact with the inner wall (30) and the outer wall (31) of the tube (3).
- The device according to one of Claims 11 to 13, characterized in that the dielectric tube (3) is closed at its end (33) opposite to the coaxial assembly (2), the plasma gas (4) being in contact only with the outer wall (31) of the tube (3).
- The device according to one of Claims 11 to 13, characterized in that the dielectric tube (3) is closed at its end (33) opposite to the coaxial assembly (2), said tube (3) being placed under vacuum or filled with a dielectric material.
- The device according to one of Claims 11 to 16, characterized in that the enclosure includes a device for introducing plasma gas into the enclosure and a device (5) for pumping plasma gas (4) from the interior to the exterior of the enclosure.
- The device according to one of Claims 14 to 17, characterized in that the central core (20) includes a duct (23) for introducing plasma gas into the enclosure.
- A method for producing a surface wave plasma along a dielectric tube (3), the inner wall (30) and/or the outer wall (31) whereof is in contact with a plasma gas (4), characterized in that it includes:- propagation of an electromagnetic wave (W) in an electrically conductive coaxial assembly (2), consisting of a central core (20) and of an outer conductor (21) surrounding the central core (20) and separated therefrom by an annular volume (22) for propagation of the electromagnetic wave and- introduction of said electromagnetic wave (W) into the section of said dielectric tube (3) in the longitudinal direction (X) of said tube (3), said dielectric tube (3) being inserted, at the end of said coaxial assembly (2), into the annular volume (22) for propagation of the electromagnetic wave and extending beyond the exit plane of the coaxial assembly over a length at least equal to twice the outer diameter of said tube (3).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1256673A FR2993428B1 (en) | 2012-07-11 | 2012-07-11 | SURFACE WAVE APPLICATOR FOR PLASMA PRODUCTION |
PCT/EP2013/064578 WO2014009412A1 (en) | 2012-07-11 | 2013-07-10 | Surface-wave applicator for plasma production |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2873307A1 EP2873307A1 (en) | 2015-05-20 |
EP2873307B1 true EP2873307B1 (en) | 2016-07-06 |
Family
ID=46963891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13735272.0A Active EP2873307B1 (en) | 2012-07-11 | 2013-07-10 | Surface-wave applicator and method for plasma production |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2873307B1 (en) |
JP (1) | JP6263175B2 (en) |
CN (1) | CN104782235B (en) |
FR (1) | FR2993428B1 (en) |
WO (1) | WO2014009412A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3042092B1 (en) * | 2015-10-05 | 2019-07-26 | Sairem Societe Pour L'application Industrielle De La Recherche En Electronique Et Micro Ondes | ELEMENTARY DEVICE FOR PRODUCING PLASMA WITH COAXIAL APPLICATOR |
FR3052326B1 (en) * | 2016-06-07 | 2018-06-29 | Thales | PLASMA GENERATOR |
KR101820242B1 (en) * | 2016-08-02 | 2018-01-18 | 한국기초과학지원연구원 | Water-cooled type surface wave plasma generating apparatus |
KR101830007B1 (en) * | 2016-11-11 | 2018-02-19 | 한국기초과학지원연구원 | COAXIAL CABLE COUPLED and WATER-COOLED TYPE SURFACE WAVE PLASMA GENERATING APPARATUS |
US11564292B2 (en) * | 2019-09-27 | 2023-01-24 | Applied Materials, Inc. | Monolithic modular microwave source with integrated temperature control |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS579868A (en) * | 1980-06-18 | 1982-01-19 | Toshiba Corp | Surface treating apparatus with microwave plasma |
FR2583250B1 (en) * | 1985-06-07 | 1989-06-30 | France Etat | METHOD AND DEVICE FOR EXCITTING A MICROWAVE PLASMA WITH ELECTRONIC CYCLOTRONIC RESONANCE |
JPH0594899A (en) * | 1991-10-02 | 1993-04-16 | Nippon Steel Corp | Plasma processor |
JPH0685525A (en) * | 1992-08-31 | 1994-03-25 | Kyocera Corp | 1/2 wavelength antenna |
JPH05347508A (en) * | 1992-10-30 | 1993-12-27 | Harada Ind Co Ltd | Wide band microwave antenna |
JPH0729889A (en) * | 1993-07-08 | 1995-01-31 | Anelva Corp | Microwave plasma treatment processing equipment |
JPH0821476B2 (en) * | 1993-09-20 | 1996-03-04 | ニチメン電子工研株式会社 | ECR plasma generator |
JPH07161491A (en) * | 1993-12-02 | 1995-06-23 | Daido Steel Co Ltd | Microwave plasma processing device |
JPH0935651A (en) * | 1995-07-20 | 1997-02-07 | Nissin Electric Co Ltd | Ion source |
JPH09245997A (en) * | 1996-03-05 | 1997-09-19 | Nissin Electric Co Ltd | Plasma chamber having cover-enclosed inner wall and antenna |
JPH1083895A (en) * | 1996-09-06 | 1998-03-31 | Hitachi Ltd | Plasma processing device |
JPH11102799A (en) * | 1997-09-26 | 1999-04-13 | Mitsubishi Electric Corp | Plasma generator |
JP4089022B2 (en) * | 1998-07-22 | 2008-05-21 | 日新イオン機器株式会社 | Self-electron emission type ECR ion plasma source |
JP2000277295A (en) * | 1999-03-25 | 2000-10-06 | Toshiba Corp | Plasma treatment apparatus |
JP2002093597A (en) * | 2000-09-14 | 2002-03-29 | Miura Gakuen | Plasma-generating antenna, plasma treatment apparatus, plasma treatment method, production method of object to be treated and production method of semiconductor device |
FR2840451B1 (en) * | 2002-06-04 | 2004-08-13 | Centre Nat Rech Scient | DEVICE FOR PRODUCING A PLASMA TABLECLOTH |
JP5312411B2 (en) * | 2003-02-14 | 2013-10-09 | 東京エレクトロン株式会社 | Plasma generator and remote plasma processing apparatus |
JP2005116362A (en) * | 2003-10-08 | 2005-04-28 | Toshiba Corp | Plasma treatment device and plasma treatment method by microwave excitation |
JP2005353364A (en) * | 2004-06-09 | 2005-12-22 | Shibaura Mechatronics Corp | Plasma generator, plasma treatment device and plasma treatment method |
JP4761244B2 (en) * | 2005-10-20 | 2011-08-31 | 株式会社小糸製作所 | Discharge lamp and light source device |
JP4967107B2 (en) * | 2006-02-20 | 2012-07-04 | 国立大学法人名古屋大学 | Microwave introducer, plasma generator, and plasma processing apparatus |
FR2904177B1 (en) * | 2006-07-21 | 2008-11-07 | Centre Nat Rech Scient | DEVICE AND METHOD FOR PRODUCING AND CONTAINING PLASMA. |
DE102006037144B4 (en) * | 2006-08-09 | 2010-05-20 | Roth & Rau Ag | ECR plasma source |
FR2938150B1 (en) * | 2008-10-30 | 2010-12-17 | Centre Nat Rech Scient | DEVICE AND METHOD FOR PRODUCTION AND / OR CONTAINMENT OF PLASMA |
TW201105183A (en) * | 2009-07-21 | 2011-02-01 | Delta Electronics Inc | Plasma generating apparatus |
FR2955451A1 (en) * | 2010-05-25 | 2011-07-22 | Centre Nat Rech Scient | Device for producing i.e. gas plasma, to carry out e.g. surface treatment such as cleaning, has microwave energy propagation medium arranged between central core and external conductor and constituted of two longitudinal sections |
-
2012
- 2012-07-11 FR FR1256673A patent/FR2993428B1/en not_active Expired - Fee Related
-
2013
- 2013-07-10 CN CN201380036340.3A patent/CN104782235B/en active Active
- 2013-07-10 EP EP13735272.0A patent/EP2873307B1/en active Active
- 2013-07-10 WO PCT/EP2013/064578 patent/WO2014009412A1/en active Application Filing
- 2013-07-10 JP JP2015520974A patent/JP6263175B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR2993428A1 (en) | 2014-01-17 |
JP6263175B2 (en) | 2018-01-17 |
EP2873307A1 (en) | 2015-05-20 |
FR2993428B1 (en) | 2014-08-08 |
JP2015530694A (en) | 2015-10-15 |
CN104782235A (en) | 2015-07-15 |
CN104782235B (en) | 2017-03-08 |
WO2014009412A1 (en) | 2014-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2873307B1 (en) | Surface-wave applicator and method for plasma production | |
EP0043740B1 (en) | Plasma generator | |
EP0711100B1 (en) | Plasma production device, allowing a dissociation between microwave propagation and absorption zones | |
FR2762748A1 (en) | SURFACE WAVE PLASMA GAS EXCITATION DEVICE | |
EP2353347B1 (en) | Device and method for producing and/or confining a plasma | |
EP0613329A1 (en) | Device for the ECR plasma heating by means of a wire applicatior of a microwave field and a static magnetic field | |
EP1518256B1 (en) | Device for production of a plasma sheet | |
EP2873306B1 (en) | Coaxial microwave applicator for plasma production | |
EP2338318B1 (en) | Low-power gaseous plasma source | |
FR2955451A1 (en) | Device for producing i.e. gas plasma, to carry out e.g. surface treatment such as cleaning, has microwave energy propagation medium arranged between central core and external conductor and constituted of two longitudinal sections | |
EP3360396B1 (en) | Elementary device for producing a plasma having a coaxial applicator and plasma installation with this device | |
EP2873090B1 (en) | Glow-discharge lamp | |
EP0499514B1 (en) | Mode converter and power-dividing device for a microwave tube, and microwave tube with such a device | |
EP0468886A2 (en) | Plasma production device | |
EP4111831A1 (en) | High-frequency wave applicator, associated coupler and device for producing a plasma | |
FR2702328A1 (en) | Device for producing a plasma | |
WO2014184357A1 (en) | Extended plasma generator comprising integrated elementary generators | |
FR2933532A1 (en) | ELECTRONIC CYCLOTRON RESONANCE ION GENERATING DEVICE | |
FR2688342A1 (en) | Microwave electron tube | |
EP0402282A2 (en) | Microwave energy coupling and distribution device in an exciter for plasma production | |
FR3114476A1 (en) | Excitation device for transforming a gas into plasma in a dielectric capillary tube and laser-plasma accelerator. | |
FR3052326A1 (en) | PLASMA GENERATOR | |
EP2743962A2 (en) | Microwave generator and related method for generating waves | |
EP0462863A1 (en) | Travelling-wave tube with a coupling arrangement between its slow-wave circuit and an external microwave circuit | |
FR2943172A1 (en) | INTERACTION NOZZLE FOR RF POWER CAVITY |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20150127 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAX | Request for extension of the european patent (deleted) | ||
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
INTG | Intention to grant announced |
Effective date: 20151120 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: PELLETIER, JACQUES Owner name: UNIVERSITE GRENOBLE ALPES |
|
INTG | Intention to grant announced |
Effective date: 20160502 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 811494 Country of ref document: AT Kind code of ref document: T Effective date: 20160715 Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 4 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D Free format text: LANGUAGE OF EP DOCUMENT: FRENCH |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602013009170 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20160706 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 811494 Country of ref document: AT Kind code of ref document: T Effective date: 20160706 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160731 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161106 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161006 Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161007 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161107 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602013009170 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160731 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160731 Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MM4A |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161006 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 |
|
26N | No opposition filed |
Effective date: 20170407 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 5 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160710 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160710 Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20130710 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 6 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160706 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: 732E Free format text: REGISTERED BETWEEN 20221110 AND 20221116 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R081 Ref document number: 602013009170 Country of ref document: DE Owner name: UNIVERSITE GRENOBLE ALPES, FR Free format text: FORMER OWNERS: PELLETIER, JACQUES, SAINT-MARTIN-D'HERES, FR; UNIVERSITE GRENOBLE ALPES, SAINT-MARTIN-D'HERES, FR Ref country code: DE Ref legal event code: R081 Ref document number: 602013009170 Country of ref document: DE Owner name: PELLETIER, JACQUES, FR Free format text: FORMER OWNERS: PELLETIER, JACQUES, SAINT-MARTIN-D'HERES, FR; UNIVERSITE GRENOBLE ALPES, SAINT-MARTIN-D'HERES, FR Ref country code: DE Ref legal event code: R082 Ref document number: 602013009170 Country of ref document: DE Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20230725 Year of fee payment: 11 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20230706 Year of fee payment: 11 Ref country code: DE Payment date: 20230712 Year of fee payment: 11 |