Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
  • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
  • H01L25/042—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F the devices being arranged next to each other
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
  • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
  • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
  • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/137—Batch treatment of the devices
  • H10F71/1375—Apparatus for automatic interconnection of photovoltaic cells in a module
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• the present invention relates to a method for metallizing and electrically connecting a plurality of solar cells.
• the invention further relates to a suitably designed photovoltaic module.
• Substrates for solar cells often have to be metallized on their surface, for example in order to enable electrical contact with the solar cell, and in particular in order to electrically connect different solar cells with each other.
• a metallization of solar cells on the one hand mechanically resistant and thus, for. over a typical lifetime of
• Metal tapes is usually done by infrared soldering or conventional soldering.
• thermal stresses in the composite layer of the solar cell or in the metallization for interconnecting a plurality of solar cells can lead to damage or destruction.
• This can be particularly critical in wafer-based solar cells whose thickness in the course of cost reductions from currently about 200 ⁇ to sink in future under 50 ⁇ with constant efficiency.
• increased breakage rates can occur due to the sensitivity of the wafers during soldering, which results in the development of alternative solar cells
• Metallization process may be necessary.
• a method for metallizing and electrically connecting a plurality of solar cells comprises the following method steps: providing a plurality of solar cell substrates; Providing a carrier substrate, which at a
• Carrier substrate Introducing energy into the metal layer by local irradiation with laser radiation such that the laser radiation is transmitted through at least one of the solar cell substrates and / or the carrier substrate in a direction toward the metal layer, and that the first metal layer due to Heating by absorbed laser radiation is irreversibly connected to the adjacent solar cell substrate.
• This aspect of the invention may, inter alia, be considered to be based on the following idea: It has been recognized that solar cells can be metallized thereby and thus electrically contacted, that a surface of a
• Solar cell substrate is applied to a metal layer and mechanically brought into contact, and the metal layer is then irradiated by means of a laser so that it heats up locally strong.
• the thus heated metal layer can bond together with the surface of the solar cell substrate, that is, enter into a mechanically adhesive and electrically conductive irreversible connection with this.
• the fact that the connection is irreversible can be expressed by the fact that the connection can not be released without at least one of the components involved in the connection being damaged. As will be described in more detail below, such bonding or bonding may result in a temporary liquefaction of metal from the metal layer, which may correspond to laser welding.
• Laser welding may be an embodiment of a fusion welding process in which at least one, preferably both components to be connected via your
• Ver spassistorstemperatur be heated and may be integrally connected to each other after the subsequent solidification of the melt. While the components to be connected are held in abutment with each other and possibly a pressure of one is built on the other component, the necessary energy for heating the components is not introduced as for example in friction welding via mechanical pressure, but can by means of
• Laser radiation can be made available.
• the laser radiation for the bonding process be set so that it comes to a sintering together of the metal layer and the surface of the solar cell substrate or to form a liquid eutectic phase between the metal layer and the surface of the solar cell substrate.
• the laser radiation can be irradiated in such a way that it radiates through the solar cell substrate and / or through the carrier substrate, wherein the properties of the laser radiation used should be selected such that the material of the respective substrate is largely transparent to the laser radiation and thus only at the Metal layer to a substantial absorption of the laser radiation comes.
• the proposed metallization process enables reliable, cost-effective, quick and easy metallization and electrical contacting of solar cell substrates.
• the provided solar cell substrate may be made of any semiconductor material.
• the metallization process is particularly suitable for the metallization of thin silicon wafers having a thickness of, for example, less than 200 ⁇ m, preferably less than 100 ⁇ m, since high mechanical stresses on the solar cell substrate are avoided.
• a solar cell substrate may be a partially processed semiconductor substrate in which inter alia a pn junction, dielectric layers and possibly also already parts of the metallization are formed.
• a Solar cell should be understood as finished processed and can be integrated as such in a photovoltaic module.
• the provided carrier substrate may consist of different materials.
• an electrically non-conductive that is to say insulating material.
• glass, flexible polymers or other non-conductive layers may be used for the support substrate.
• the carrier substrate may consist of a thin film and thus be mechanically flexible, or be provided for example in the form of a glass plate and thus be mechanically stiff.
• materials for the carrier substrate such as
• films of ethylene vinyl acetate (EVA) or silicone can be used for the carrier substrate.
• the carrier substrate may have a planar design and a larger area than solar cell substrates applied thereto, so that a plurality of solar cell substrates can be metallized with a single carrier substrate and these can be electrically connected to one another.
• a metal layer is provided, which is referred to hereinafter as the first metal layer. This first
• Metal layer may be applied to the carrier substrate before it is brought into contact with the solar cell substrate.
• the first metal layer can directly adjoin the non-metallic carrier substrate, ie without intermediate storage of other, in particular metallic, layers.
• the first metal layer can be deposited on the carrier substrate or applied to it in such a way that it is firmly connected to the carrier substrate, ie not free of damage from the carrier substrate Carrier substrate can be solved.
• the first metal layer may be adhesively deposited on or applied to the carrier substrate such that it does not adhere to the metal layer on the surface of the substrate
• Solar cell substrate is larger than on the carrier substrate, so that the carrier substrate can be detached from the metal layer.
• the carrier substrate can be coated over the whole area with the first metal layer.
• a metal layer can be deposited over a large area onto the surface of the carrier substrate, and then the areas forming a pattern of the first metal layer, as they are attached to the substrate
• Solar cell substrate to be bonded for example, be separated by a laser from surrounding areas. The surrounding areas may then be prior to the bonding of the areas to be attached to the solar cell substrate
• the surrounding regions may also remain on the surface of the solar cell substrate, the carrier substrate, after the bonding of the regions of the solar cell substrate to be attached to the solar cell substrate
• Metal layer can be peeled off again together with the non-bonded surrounding areas, wherein the bonded areas of the metal layer from the carrier substrate to dissolve and remain on the solar cell substrate.
• the pattern of the first metal layer may be adapted to not only, for example, different solar cell substrates with the aid of the first metal layer metallize, but also electrically connect them via the first metal layer.
• the first metal layer may in this case have a layer thickness in the range from 30 nm to 300 ⁇ m, preferably in the range from 100 nm to 100 ⁇ m.
• the layer thickness of the first metal layer used can be selected depending on an electrical resistance to be achieved via the metal layer.
• any metal can be used for the first metal layer.
• Liquidus temperature however, below a temperature of, for example, 1600 ° C and thus can be relatively easily melted by irradiation of laser light. Furthermore, the metal should be easy, for example, with
• the metal should have a sufficiently high electrical conductivity for the interconnection of a plurality of solar cell substrates.
• the metal for the first metal layer does not need to be solderable. Aluminum has proved to be advantageous for the first metal layer. Although aluminum is not solderable, but can be provided and processed inexpensively and has in particular in the contacting of
• Solar cell fabrication Preferred metals that can be used for the first metal layer include silver (Ag), copper (Cu), titanium (Ti), nickel (Ni), gold (Au), and palladium (Pd).
• the carrier substrate provided with the first metal layer and the solar cell substrate to be metallized are attached to one another in the course of the metallization process such that the surface to be metallized of the
• Solar cell substrate adjacent to the first metal layer of the carrier substrate, that is, with this in mechanical contact, or is arranged closely adjacent thereto.
• a laser beam is directed onto the solar cell substrate or onto the carrier substrate in such a way that laser radiation forms the interface between the laser beam
• Metal layer or a second metal layer described below is so strongly absorbed that the first metal layer is irreversibly connected directly to the adjacent solar cell substrate due to the caused by the absorption of the laser radiation heating, i. the first metal layer forms a connection with the semiconductor material of the solar cell substrate or with the metal of a second metal layer provided thereon, wherein the connection is not
• properties of the laser radiation e.g. their wavelength, their power density and possibly their pulse duration be chosen such that it in the material of the solar cell substrate or the carrier substrate, through which the
• Laser radiation should first be transmitted, not to a significant, i.
• the material significantly heated, absorption of the laser radiation comes.
• the properties of the laser radiation used can be selected such that it does not become any when the metal layer is irradiated
• Laser radiation should be chosen so that in the metal layer enough
• Laser radiation is absorbed to this at least temporarily over the
• the metal layer then liquefies locally for a short time and can undergo a mechanically and electrically reliable bonding contact with the adjacent surface of the solar cell substrate or a second metal layer previously deposited thereon during subsequent solidification.
• properties of the laser radiation can be chosen so that the metal layer by absorption, although not to the melting or
• Liquidus temperature is heated, but a eutectic temperature at which the metal layer with the semiconductor material of the adjacent solar cell substrate forms a liquid eutectic phase, is exceeded.
• a eutectic temperature at which the metal layer with the semiconductor material of the adjacent solar cell substrate forms a liquid eutectic phase is exceeded.
• the melting temperature of aluminum is 660 ° C
• the eutectic temperature at which aluminum forms a liquid phase with silicon is already reached at 577 ° C, so that lower laser radiation absorption or laser beam intensity can suffice for this particular material combination.
• Metal layer is bonded to the solar cell substrate and thus produces an electrical contact, it can be provided that the first metal layer comes into direct contact with the surface of the adjacent solar cell substrate and with the material enters into an irreversible connection.
• a second metal layer may alternatively be formed on a surface of the solar cell substrate.
• This second metal layer can cover the surface of the solar cell substrate over the entire surface or locally with a pattern.
• solar cells e.g. provided that locally metallized areas are provided at contact areas to the base or emitter areas of the solar cell substrate.
• metal is usually vapor-deposited locally or printed on this. For the bonding process then the laser radiation through the
• Solar cell substrate or the carrier substrate are directed through such that it comes to the absorption in the first metal layer and / or in the second metal layer and at least one of these two metal layers is heated sufficiently for irreversible bonding.
• Material such as a solder material can be provided.
• a solder material can be provided.
• All of the materials involved in the electrical connection between the solar cell substrate and the first metal layer which may inter alia serve to interconnect a plurality of solar cell substrates, may thus be refractory, i. the liquefaction temperatures of all materials involved can be e.g. above 500 ° C, preferably above 570 ° C.
• both metal layers may consist of the same metal.
• both metal layers may consist of aluminum. It can be used that
• metal is intended to be broadly understood herein and includes both pure metals and metal mixtures, metal alloys, and stacks of different metal layers.
• Photo voltaikmodul proposed from several metallized and electrically connected solar cells.
• the photovoltaic module has a plurality of solar cells and a single carrier substrate. On a surface of the
• Carrier substrate is provided with this firmly connected first metal layer.
• Each of the solar cells is provided with a surface on the metal layer of the
• Such a photovoltaic module can advantageously be produced by the metallization method described above.
• the metal layer provided on the carrier substrate which preferably directly adjoins the non-metallic carrier substrate, directly with a surface of a
• Semiconductor substrate of the solar cell or a previously attached to such a surface metal contact layer is materially connected, i. without
• the method allows several solar cells to be quasi simultaneously, i. in a single process step, to metallize, electrically contact and interconnect. Instead of metallizing each solar cell individually, as was the case with conventional metal strips to be soldered for interconnecting a plurality of solar cells, a large-area carrier substrate having a first metal layer previously deposited thereon in a suitable pattern can be prepared to form a plurality of solar cells within a common solar cell
• processing such as, for example, interconnecting a plurality of solar cells to form a photovoltaic module, can be simplified and made more cost-efficient.
• a whole-area metallization or at least a large-scale metallization can be provided, whereby better
• the use of the laser bonding technology enables metallization and interconnection of solar cells with the aid of the metallized carrier substrate, without having to subject the solar cells to excessive thermal stresses. Furthermore, the laser bonding technology allows a direct connection of a variety of metals, among other things, non-solderable metals can be electrically and mechanically interconnected in this way. Thus, it is not possible to use classically non-solderable aluminum for the metallization and interconnection of solar cells.
• a direct connection of the first metal layer provided on the carrier substrate with the solar cell substrate or a second metal layer previously deposited on the surface of this solar cell substrate is possible without additional adhesives or solder pastes, whereby both process steps and processing material can be saved.
• the solderable silver metallizations on the solar cell substrate which are conventionally used for the metallization of solar cell substrates or other similar metallizations can be dispensed with, since their solderability is
• Metal layer is used for metallization of the solar cell substrate and the metal layer is distributed over a large area bonded to the solar cell substrate, local stresses on the solar cell substrate can be kept low. This is especially for very thin and thus mechanically sensitive
• the holes generated in the first metal layer upon irradiation with the laser can contribute to improved adhesion of the lamination material by penetration of lamination material into these holes.
• a layer of polymeric material such as e.g. a film of ethylene vinyl acetate (EVA) or silicone, be stored.
• This layer can serve any one of the following properties: e.g. a film of ethylene vinyl acetate (EVA) or silicone.
• EVA ethylene vinyl acetate
• the layer may be deformed during encapsulation of the finished solar cells and / or contacted with similar layers of encapsulating material. In this way it can be largely avoided that e.g. Moisture penetrates into an encapsulated solar cell module, accumulates in cavities and leads to corrosion.
• the first metal layer with the surface of the solar cell substrate or a second provided there may be deformed during encapsulation of the finished solar cells and / or contacted with similar layers of encapsulating material.
• Metal layer is to be bonded together, for example, the polymeric layer may be interrupted locally or removed locally during the laser.
• the photovoltaic module can be adapted to a variety of shapes or surfaces.
• solar cells based on thin wafers may be mechanically assisted by the carrier substrate which can reduce breakage rates in the manufacture of photovoltaic modules.
• Fig. 1 shows an arrangement of solar cells during a metallization according to an embodiment of the present invention.
• Fig. 2 shows an alternative arrangement of solar cells during a
• FIG. 3 shows a further alternative arrangement of solar cells during a metallization according to an embodiment of the present invention.
• Fig. 6 shows a plan view of solar cell substrates, which by means of a
• Carrier substrates are metallized and electrically connected together according to an embodiment of the present invention.
• FIG. 1 shows an arrangement of a plurality of metallized and electrically interconnected solar cells 20 designed as a photovoltaic module 100.
• the solar cells 20 are wafer-based silicon solar cells in which both types of contact on a backside of a solar cell substrate 1 are arranged.
• emitter regions of the solar cell are coated with an aluminum-metal layer 2 a forming a first contact type
• base regions are coated with an aluminum-metal layer 2 b forming a second contact type.
• Fig. 5 is a plan view of the solar cell substrate 1 with the
• a carrier substrate 4 is coated with a metal layer 3, which also consists of aluminum.
• the metal layer 3 does not cover the carrier substrate 4 over the whole area, but is formed as a special pattern with busbars 3 a collecting and longitudinally connecting fingers 3 b.
• the carrier substrate 4 may be a thin flexible film, for example of EVA, as is conventional for
• the carrier substrate 4 may be a rigid glass sheet.
• the metal layer 3 can be applied for example by means of vapor deposition technologies using suitable masks or by printing technologies.
• the solar cell substrates 1 In order to metallize the solar cell substrates 1 and in addition to interconnect the solar cells 20 with one another, they are brought into contact with the carrier substrate 4. In this case, the solar cell substrates 1 are positioned on the carrier substrate 4 such that the metal layers 2a forming the different types of contact, 2b adjoin the suitably formed pattern of the deposited on the carrier substrate 4 metal layer 3 at predetermined positions.
• Solar cell substrate 1 adjacent, irradiated.
• a pulsed Nd-Y AG laser which emits, for example, in a wavelength range of 1064 nm, 532 nm or 355 nm, can be used.
• Laser pulse durations in the range of a few nanoseconds up to several microseconds were recognized as suitable.
• power densities in the range of 0.1 J / cm 2 to 10 kJ / cm 2 preferably 0.5 J / cm 2 to 5 kJ / cm 2
• Characteristics of the laser beams used are chosen so adapted to the material of the carrier substrate 4, that the laser radiation. 6
• the metal layer 3 a part of the radiated laser radiation power is absorbed and thus leads to a thermal heating.
• the metal of the layer 3 is briefly heated to such an extent that it enters into an irreversible bond with the metal layers 2a, 2b on the solar cell substrate 1.
• the metal of the first metal layer 3 can be heated beyond its melting point, for example, so that it can connect in its liquid phase in one piece and with the adjacent second metal layer 2a, 2b on the solar cell substrate 1.
• the irradiated laser radiation 6 acts as in laser welding.
• the properties of the irradiated laser radiation 6 can be chosen so that the first metal layer 3 is heated less, resulting in a Bonding may occur by some kind of sintering together of the first metal layer 3 with an adjacent metal layer 2a, 2b on the solar cell substrate 1.
• Laser radiation 6 are supplemented by a transmitted for example in the opposite direction through the solar cell substrate 1 laser radiation 5 or replaced by this. Since the solar cell substrate 1 usually has other absorption properties than the carrier substrate 4, the properties of the laser radiation 5 used here must be adapted accordingly to ensure that the laser radiation 5 is largely transmitted through the solar cell substrate 1 and then in the deposited metal layer 2a, 2b is absorbed.
• FIG. 6 schematically shows a plan view of the arrangement of a plurality of solar cells 20 shown in FIG. 1.
• Solar cells 20 in which, as shown in FIG. 5, metallizations 2 a, 2 b for the different types of contact are formed, are arranged on a carrier substrate 4.
• the solar cells 20 are in this case positioned such that the metal layer regions 2 a, 2 b are arranged over corresponding metallized regions 3 b of the carrier substrate 4, as shown in FIG. 4.
• Both metal layers 2, 3 consist here of aluminum.
• At a plurality of connecting portions 7 are described by the above
• Laser bonding method formed connecting points, by which each of the solar cells 20 is integrally connected to the provided on the support substrate 4 metal layer 3.
• External connections 8 serve to make the electrical power provided by the solar cells available to consumers.
• FIGS. 2 and 3 illustrate alternative embodiments of photovoltaic modules 100, such as may be fabricated using the described metallization process using laser bonding.
• a suitably metallized carrier substrate 4 is arranged on both sides of a solar cell substrate 1.
• solar cells 20, in which the different types of contact are formed on opposite surfaces, between two carrier substrates 4 are stored.
• Metal layers 2 on the front and back sides of the solar cell substrate 1 can then be mechanically and electrically connected by means of laser radiation 6 to metal layers 3 on the carrier substrates 4 by a laser bonding process.
• internal metal connections 9 between the metal layers 3, which contact adjacent solar cells may be provided.
• Fig. 3 shows another embodiment of a photovoltaic module 100. Similar to the embodiment of Fig. 2, solar cells 20 are on both sides of
• Carrier substrate 4 contacted.
• a dielectric layer 10 is provided in addition to the metal layers 2. This can serve, for example, for passivation of the surface of the solar cell substrate 1.
• a layer of polymeric material may be intermediately stored which may fill or seal any voids in the finished solar cell to prevent corrosion damage.
• Solar cell substrate 1 may be provided. These dielectric layers 10 can be used to passivate the surface of the solar cell substrate 1 or as
• metal layers 2 are already provided on the solar cell substrate 1, with which the metal layers 3 provided on the carrier substrate 4 can form a one-piece connection during the metallization process.
• the laser bonding method used makes it possible to use aluminum for the metal layers 2 on the solar cell substrate 1, this may be an embodiment which is preferred for industrial use.
• Metal layers 2 may be provided. In (not shown graphically)
• Embodiments may be provided on the support substrate 4
• Solar cell substrate 1 received.
• aluminum when aluminum is used for the metal layer 3, it can be used particularly advantageously that aluminum can already form a liquid eutectic phase with silicon of a solar cell substrate 1 below its melting temperature, ie above a eutectic temperature, thus making it into a one-piece electrical device even at lower temperatures Connection of the provided on the support substrate 4 metal layer 3 may come with the solar cell substrate 1.

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• 2011
  • 2011-06-14 DE DE102011104159A patent/DE102011104159A1/de not_active Withdrawn
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