EP2665848A4 - Dispositif pour faire croître un lingot de monocristal de saphir chauffé avec une résistance, procédé de fabrication d'un lingot de monocristal de saphir chauffé avec une résistance, lingot de monocristal de saphir et tranche de saphir - Google Patents

Dispositif pour faire croître un lingot de monocristal de saphir chauffé avec une résistance, procédé de fabrication d'un lingot de monocristal de saphir chauffé avec une résistance, lingot de monocristal de saphir et tranche de saphir

Info

Publication number
EP2665848A4
EP2665848A4 EP11856568.8A EP11856568A EP2665848A4 EP 2665848 A4 EP2665848 A4 EP 2665848A4 EP 11856568 A EP11856568 A EP 11856568A EP 2665848 A4 EP2665848 A4 EP 2665848A4
Authority
EP
European Patent Office
Prior art keywords
sapphire
crystal ingot
sngle
resistance heated
grower
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11856568.8A
Other languages
German (de)
English (en)
Other versions
EP2665848A2 (fr
EP2665848B1 (fr
Inventor
Do-Won Song
Young-Hee Mun
Sang-Hoon Lee
Seong-Oh Jeong
Chang-Youn Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Siltron Co Ltd
Original Assignee
LG Siltron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Siltron Inc filed Critical LG Siltron Inc
Publication of EP2665848A2 publication Critical patent/EP2665848A2/fr
Publication of EP2665848A4 publication Critical patent/EP2665848A4/fr
Application granted granted Critical
Publication of EP2665848B1 publication Critical patent/EP2665848B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2973—Particular cross section
    • Y10T428/2978—Surface characteristic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/298—Physical dimension

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP11856568.8A 2011-01-19 2011-12-21 Procédé de fabrication d'un lingot de monocristal de saphir chauffé avec une résistance Active EP2665848B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110005339A KR101285935B1 (ko) 2011-01-19 2011-01-19 저항 가열 사파이어 단결정 잉곳 성장장치, 저항 가열 사파이어 단결정 잉곳 제조방법, 사파이어 단결정 잉곳 및 사파이어 웨이퍼
PCT/KR2011/009962 WO2012099343A2 (fr) 2011-01-19 2011-12-21 Dispositif pour faire croître un lingot de monocristal de saphir chauffé avec une résistance, procédé de fabrication d'un lingot de monocristal de saphir chauffé avec une résistance, lingot de monocristal de saphir et tranche de saphir

Publications (3)

Publication Number Publication Date
EP2665848A2 EP2665848A2 (fr) 2013-11-27
EP2665848A4 true EP2665848A4 (fr) 2014-07-30
EP2665848B1 EP2665848B1 (fr) 2018-04-25

Family

ID=46516195

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11856568.8A Active EP2665848B1 (fr) 2011-01-19 2011-12-21 Procédé de fabrication d'un lingot de monocristal de saphir chauffé avec une résistance

Country Status (7)

Country Link
US (1) US8597756B2 (fr)
EP (1) EP2665848B1 (fr)
JP (1) JP5789676B2 (fr)
KR (1) KR101285935B1 (fr)
CN (1) CN103328695B (fr)
TW (1) TWI484074B (fr)
WO (1) WO2012099343A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5838726B2 (ja) * 2011-10-28 2016-01-06 株式会社Sumco サファイア単結晶の製造装置及び製造方法
CN102851745B (zh) * 2012-09-26 2015-08-19 南京晶升能源设备有限公司 蓝宝石单晶炉分段式钨丝网加热器
JP2014162673A (ja) * 2013-02-25 2014-09-08 Tokuyama Corp サファイア単結晶コアおよびその製造方法
KR101472351B1 (ko) * 2013-03-20 2014-12-12 주식회사 엘지실트론 사파이어 단결정 성장의 해석 방법 및 사파이어 단결정의 성장 방법
US9063914B2 (en) 2013-10-21 2015-06-23 Seven Bridges Genomics Inc. Systems and methods for transcriptome analysis
CN105401211B (zh) * 2014-08-08 2017-12-26 上海超硅半导体有限公司 拉制c轴蓝宝石单晶长晶炉及方法
CN105239154A (zh) * 2015-09-10 2016-01-13 上海超硅半导体有限公司 提拉法单晶硅生长流场控制技术
JP5961824B1 (ja) * 2015-09-14 2016-08-02 並木精密宝石株式会社 Ｅｆｇ法用育成炉の断熱構造

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7255740B2 (en) * 2003-02-18 2007-08-14 Schott Ag Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements
US20090320743A1 (en) * 2008-06-30 2009-12-31 Memc Electronic Materials, Inc. Controlling a Melt-Solid Interface Shape of a Growing Silicon Crystal Using an Unbalanced Magnetic Field and Iso-Rotation
JP2011006314A (ja) * 2009-06-29 2011-01-13 Showa Denko Kk 単結晶引き上げ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100573525B1 (ko) 2003-12-11 2006-04-26 주식회사 모노세라피아 단결정 성장장치
JP2005213097A (ja) * 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
JP2007223830A (ja) * 2006-02-22 2007-09-06 Sumitomo Metal Mining Co Ltd 酸化物単結晶の育成方法
JP4810346B2 (ja) * 2006-07-31 2011-11-09 株式会社信光社 サファイア単結晶の製造方法
JP2010040696A (ja) * 2008-08-04 2010-02-18 Hitachi Cable Ltd エピタキシャル成長用基板
JP4983776B2 (ja) 2008-11-21 2012-07-25 住友金属鉱山株式会社 サファイア単結晶育成装置
JP2010150052A (ja) 2008-12-24 2010-07-08 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置
CN101580963B (zh) * 2009-06-26 2011-04-13 哈尔滨工大奥瑞德光电技术有限公司 300mm以上蓝宝石单晶的冷心放肩微量提拉制备法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7255740B2 (en) * 2003-02-18 2007-08-14 Schott Ag Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements
US20090320743A1 (en) * 2008-06-30 2009-12-31 Memc Electronic Materials, Inc. Controlling a Melt-Solid Interface Shape of a Growing Silicon Crystal Using an Unbalanced Magnetic Field and Iso-Rotation
JP2011006314A (ja) * 2009-06-29 2011-01-13 Showa Denko Kk 単結晶引き上げ装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012099343A2 *

Also Published As

Publication number Publication date
TWI484074B (zh) 2015-05-11
KR20120084046A (ko) 2012-07-27
JP5789676B2 (ja) 2015-10-07
JP2014502952A (ja) 2014-02-06
EP2665848A2 (fr) 2013-11-27
WO2012099343A3 (fr) 2012-11-22
US20120282426A1 (en) 2012-11-08
KR101285935B1 (ko) 2013-07-12
TW201243114A (en) 2012-11-01
WO2012099343A2 (fr) 2012-07-26
CN103328695A (zh) 2013-09-25
CN103328695B (zh) 2017-12-26
US8597756B2 (en) 2013-12-03
EP2665848B1 (fr) 2018-04-25

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