EP2652766B1 - Elektron-zyklotron-resonanzionenquelle - Google Patents

Elektron-zyklotron-resonanzionenquelle Download PDF

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Publication number
EP2652766B1
EP2652766B1 EP11811099.8A EP11811099A EP2652766B1 EP 2652766 B1 EP2652766 B1 EP 2652766B1 EP 11811099 A EP11811099 A EP 11811099A EP 2652766 B1 EP2652766 B1 EP 2652766B1
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EP
European Patent Office
Prior art keywords
magnetic field
plasma chamber
potential
insulating structure
plasma
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EP11811099.8A
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English (en)
French (fr)
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EP2652766A1 (de
Inventor
Olivier Delferriere
Olivier Tuske
Francis HARRAULT
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/08—Arrangements for injecting particles into orbits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/08—Arrangements for injecting particles into orbits
    • H05H2007/081—Sources
    • H05H2007/082—Ion sources, e.g. ECR, duoplasmatron, PIG, laser sources

Definitions

  • the present invention relates to an ion generator device with electronic cyclotron resonance, and more precisely a source of single-charged ions of the ECR or "Electron Cyclotron Resonance" type, for electronic cyclotron resonance.
  • ECR sources electronic cyclotron resonance devices, also called ECR sources, are used to produce mono-charged or multi-charged ions (that is to say atoms from which one or more electrons have been torn off).
  • upstream and downstream are used with reference to the direction of propagation of the ion beam at the outlet of the chamber.
  • Chamber 1 is supplied with atoms which can come from a gas or a metal and the means of propagation of a high-frequency wave and the means of generation of a magnetic field make it possible to couple, inside the chamber a high-frequency wave with a magnetic field B, so as to obtain the conditions under which, an electronic cyclotron resonance is likely to appear and to ionize the atoms present, thus generating a plasma.
  • the chamber is at high voltage, that is to say voltages of up to 100,000 V.
  • the elements which are connected to the chamber are therefore also high voltage.
  • the means for generating a magnetic field, at least part of the means for propagating a high-frequency wave are at high voltage.
  • the high-voltage elements are supported by an insulating platform 9 and by a support flange 8.
  • the ion cyclotron electronic resonance generating device also comprises an accelerator tube 7 which makes it possible to achieve electrical insulation between the high-voltage and the low-voltage and which makes it possible to extract ions in the chamber with a series of electrodes 11 making it possible to form an ion beam which is then directed towards a transport line 10 at low voltage to be used or studied.
  • the downstream side of the accelerator tube 7 is connected to the transmission line 10 which is at low voltage.
  • the downstream side of the accelerator tube is at low voltage.
  • the accelerator tube 7 is disposed downstream of the support flange 8, which itself is disposed downstream of the plasma chamber 1.
  • the upstream side of the accelerator tube 7 is at high voltage.
  • the accelerator tube 7 therefore comprises an insulating structure 12 which is arranged downstream of the support flange 8.
  • the insulating structure 12 has an upstream end 15 which is at the potential of the support flange 8 and of the chamber 1, and a downstream end 16 which is at the potential of the transport line 10.
  • the insulating structure 12 is generally a cylindrical insulating structure composed of ceramics 13 and rings metals 14 of potential distribution arranged between the upstream end 15 and the downstream end 16.
  • the accelerator tube 7 also comprises an extraction system which comprises several electrodes 11a to 11e which make it possible to form an ion beam at the outlet of the plasma chamber 1.
  • the accelerator tube 7 is connected to a sleeve of pumping 17, downstream of the electrodes 11a to 11e, which makes it possible to avoid a breakdown between the electrodes.
  • the extraction system comprises a first electrode 11a which is arranged at the outlet from the chamber 1.
  • This first pierced electrode 11a produces the outlet orifice of the plasma chamber.
  • This first electrode 11a is at high voltage and it is connected to the support flange 8.
  • the extraction system also comprises a second electrode 11b which is connected to one of the metal rings 14 of potential distribution.
  • This second electrode 11b has a variable potential as a function of the species which it is desired to extract outside the chamber.
  • the potential of the second electrode 11b has an independent polarization.
  • the extraction system then comprises two electrodes 11c and 11d which are connected to the downstream end 16 of the accelerator tube 7 and which are at the same potential as the downstream end of the accelerator tube 7, that is to say at the potential of transmission line 10.
  • the extraction system then comprises a fifth electrode 11e disposed between the electrodes 11c and 11d which is at a negative potential with respect to the potential of the transport line 10 in order to prevent the electrons from returning to the plasma chamber 1.
  • the electrodes 11a to 11e make it possible to accelerate and guide the ion beam leaving the chamber 1.
  • the contour of each electrode is optimized in order to avoid on the one hand any electrical breakdown and on the other hand any geometric aberration in focusing the beam.
  • the region of the space for which the profile of the electrodes conditions the extraction of the beam is included inside the zone represented on the figure 5a , in which the inter-electrode distances, thicknesses, angles, and leaves of each of the electrodes completely characterize the extracted beam.
  • the electrode 11b is connected to one of the metal potential distribution rings 14 so as to be able to polarize it independently.
  • the electrodes 11c and 11d are connected to the downstream flange 16 of the accelerator tube 7 in order to bring them to the potential of the line of transport 10.
  • the electrode 11e is fixed to the electrode 11c by means of insulating spacers and is brought to a negative potential with respect to the transport line 10.
  • the insulating structure 12 of the accelerator tube surrounds the electrodes of the extraction system and therefore has a large diameter and a long length so that the device figures 1 and 2 is very bulky.
  • the means for generating a magnetic field 4 which most often include coils, are at high voltage so that an isolation transformer must be used to supply the coils with energy, which complicates the design of the device.
  • the pumping through the transport line 10 may be insufficient to avoid a breakdown between the electrodes.
  • the device of the figure 1 comprises solenoids 30 arranged along the transport line 10 which make it possible to refocus the ion beam along the transport line 10. From the electrode 11d to the exit of the accelerator tube 7 the beam diverges by electrostatic repulsion of the beam charges between them, causing a large beam size and a significant divergence of the beam at the outlet of the accelerator tube 7.
  • the first solenoid 30 can only be positioned downstream of the accelerator tube 7. The focusing of the beam only intervenes at the outlet of the accelerator tube 7 leading to a degradation of the brightness of the beam produced.
  • the weight of the assembly formed by the chamber 1, the extraction system 11, the magnetic system 4 and the insulating structure 12 makes it difficult to support it by the single support flange 8.
  • the support flange 8 which is at the high voltage supports the magnetic system as well as the plasma chamber. She must therefore rest on a platform 9 isolated from the transport line which allows mechanical forces to be taken up, ensuring the centering of the assembly as well as the vacuum tightness.
  • the presence of the platform makes the device bulky and heavy.
  • the document JP H06-19961 B2 describes an ion generator device comprising a plasma chamber, means for generating a magnetic field in the plasma chamber, the plasma chamber being at a first potential, the means for generating a magnetic field being at a second potential, and means for propagating a high-frequency wave inside the plasma chamber.
  • the invention aims to remedy the drawbacks of the prior art by proposing an ion generator device with electronic cyclotron resonance which is less bulky than those of the prior art.
  • Another object of the invention is to provide an ion generator device with electronic cyclotron resonance which is lighter than those of the prior art.
  • Another object of the invention is to propose an ion generator device with electronic cyclotron resonance of simpler design than those of the prior art.
  • the invention also aims to propose an ion generator device with electronic cyclotron resonance which makes it possible to have a better focused ion beam.
  • downstream and upstream are used with reference to an element of the system and with respect to the direction of propagation of the ion beam at the outlet of the plasma chamber.
  • the means for generating a magnetic field which generally comprise at least one coil, are no longer arranged upstream of the insulating structure but downstream. Indeed, instead of having the means for generating a magnetic field around the place where one wants to create the magnetic field, the invention proposes to shift these generation means downstream from the place where the we want to create the magnetic field and use the leakage field from these means for generating a magnetic field instead of using the maximum magnetic field produced by the means for generating a magnetic field.
  • the means for generating a magnetic field therefore make it possible to produce both the magnetic field which allows electronic cyclotronic resonance in the plasma chamber and the magnetic field which makes it possible to focus the ion beam in the extraction system.
  • the first potential is preferably different from the second potential.
  • the plasma chamber and the means for generating a magnetic field are at the same potential, which corresponds to the high voltage, which leads to the need to use a platform. form of insulation to support them.
  • an isolation transformer must be used to supply the means for generating a magnetic field with energy, which complicates the composition of the device.
  • the means for generating a magnetic field are no longer at the same potential as the plasma chamber, so that no isolation platform is no longer necessary.
  • the supply of the means for generating a magnetic field is simplified.
  • the upstream end of the insulating structure is connected to the parts of the device which are at the first potential, while the parts of the device which are at the second potential are connected to the downstream end of the insulating structure.
  • the insulating structure therefore makes it possible to electrically isolate the parts of the device which are at the first potential from those which are at the second potential.
  • the device according to the invention may also include one or more of the characteristics described below taken individually or according to all technically possible combinations.
  • the device is preferably a source of mono-charged ions of the ECR type.
  • This source of mono-charged ions is intended mainly for the injection of beams of ions of high brightness in particle accelerators. Direct extraction in the magnetic field makes it possible to limit the radial extension of the beam as soon as it is formed in the plasma electrode, and therefore the loss of particles on the walls of the vacuum chamber of the transport line.
  • the means for generating a magnetic field are entirely located downstream of the plasma chamber.
  • the device further comprises an extraction system capable of forming an ion beam at the outlet of the plasma chamber.
  • the extraction system is located downstream from the plasma chamber.
  • the extraction system comprises several electrodes.
  • the chamber has a downstream side pierced by an outlet orifice.
  • the extraction system comprises a first electrode, disposed along the downstream side of the chamber.
  • the means for generating a magnetic field are preferably arranged downstream of the first electrode of the extraction system, so that they make it possible to focus the beam extracted from the plasma chamber by the first electrode.
  • the device thus makes it possible to produce a beam of high gloss.
  • At least part of the means for propagating a high-frequency wave is also at the first potential.
  • the parts of the device which are at the first potential are at a high voltage.
  • high voltage is called, a direct voltage greater than 1000 volts and which can go to several tens of thousands of volts.
  • the ion generation device also preferably includes an accelerator tube.
  • the insulating structure is located upstream of the plasma chamber, which makes it possible to reduce the total length of the device.
  • the length of the extraction system can be reduced to a distance of the order of 50 mm whatever the energy of the extracted beam, by positioning the insulating structure upstream of the plasma chamber.
  • the insulating structure is preferably arranged around at least part of the means for propagating a high frequency wave so as to make the device less bulky.
  • the insulating structure comprises ceramic insulating tubes.
  • the insulating structure also comprises metal potential distribution rings.
  • the upstream end of the insulating structure is provided with a first metal flange.
  • downstream end of the insulating structure is provided with a second metal flange.
  • the device further comprises a support flange which supports the insulating structure.
  • the support flange also supports the means for generating a magnetic field.
  • the support flange also supports the extraction system.
  • the plasma chamber is connected to the support flange via the insulating structure.
  • the support flange is electrically isolated from the plasma chamber.
  • the plasma chamber is preferably arranged between the insulating structure and the support flange.
  • the support flange has the same potential as the means for generating a magnetic field.
  • the support flange is preferably arranged upstream of the means for generating a magnetic field.
  • the means for generating a magnetic field comprise a solenoid, which makes it possible to create a magnetic field large enough for the electronic cyclotron resonance to take place in the plasma chamber.
  • the device further comprises a pumping sleeve disposed between the means for generating a magnetic field and the insulating structure, in order to optimize the operating conditions while lowering the pressure in the extraction system.
  • the pumping sleeve is located as close as possible to the extraction system.
  • the means for generating a magnetic field are arranged around the extraction system, reinforcing the focusing of the extracted beam.
  • the figures 6 to 8 represent an ion generator device with electronic cyclotron resonance according to an embodiment of the invention.
  • the ion cyclotron electronic resonance generating device comprises a plasma chamber 1 capable of containing a plasma.
  • the plasma chamber 1 has an upstream side 2 on which is located an inlet orifice 1a of the chamber into which a high-frequency wave can be injected, and a downstream side 3 in which is located an outlet orifice 1b through which a ion beam can come out.
  • the device also includes means for propagating a high-frequency wave 5 inside the chamber.
  • These means for propagating a high-frequency wave 5 preferably comprise a system for generating a high-frequency wave (not shown) and means 6 for guiding the high-frequency wave to the orifice d input 1a of the plasma chamber 1.
  • the means of propagation of the high-frequency wave 5 are arranged upstream of the plasma chamber 1.
  • the plasma chamber 1 and at least part of the means for propagating a high-frequency wave 5 have a first potential.
  • the plasma chamber 1 and at least part of the means for propagating a high-frequency wave 5 are at high voltage, in the present case at a direct voltage of the order of 100,000 V.
  • the device also includes a pumping sleeve 17 which is arranged around the plasma chamber 1.
  • This pumping sleeve 17 makes it possible in particular to ensure a sufficient vacuum at the electrodes 11a to 11e of the extraction system to prevent breakdowns, and maintain a vacuum of the order of 10 -3 mbar in the plasma chamber 1 allowing the formation of the plasma.
  • the device also comprises a support flange 8 which forms the frame of the device and which makes it possible to support the entire device.
  • the support flange 8 has a second potential.
  • the second potential is generally lower than the first potential.
  • the device also includes means for generating a magnetic field 4.
  • These means for generating a magnetic field 4 preferably comprise a coil 18, however these means for generating a magnetic field 4 could also include one or more magnets .
  • the means for generating a magnetic field 4 are at the second potential.
  • the means for generating a magnetic field 4 are downstream of the plasma chamber 1 and downstream of the support flange 8.
  • the device also includes an accelerator tube which has an insulating structure 12.
  • the insulating structure 12 has an upstream end 15 which is at the first potential and a downstream end 16 which is at the second potential.
  • the upstream end 15 is connected to a first metal flange 19 at the first potential.
  • the downstream end 16 is connected to the upstream flange 23 of the pumping sleeve 17 at the second potential.
  • the insulating structure 12 consists of ceramic insulating tubes 13 which make it possible to isolate the elements connected at the upstream end 15 of the insulating structure from those connected at its downstream end 16.
  • the insulating structure 12 also includes metal rings 14 arranged between the upstream end 15 and the downstream end 16.
  • the metal tubes 14 have different potentials between the potential of the upstream end 15 and that of the downstream end 16.
  • the insulating structure 12 is arranged upstream of the plasma chamber 1.
  • the insulating structure 12 is preferably arranged around at least part of the means for propagating a high-frequency wave 5, and more precisely around the waveguide 6 of the means for propagating a high-frequency wave 5 .
  • the accelerator tube also includes an extraction system 11 which makes it possible to form an ion beam at the outlet of the plasma chamber 1.
  • the extraction system 11 is preferably located downstream of the plasma chamber 1.
  • the extraction system 11 preferably comprises several electrodes.
  • the device according to the invention makes it possible to reduce the space occupied downstream of the device.
  • the figure 10 represents the magnetic field as a function of the longitudinal position in each of the devices of the figure 9 . More precisely, the curve A 20 represents the evolution of the magnetic field as a function of the longitudinal position in the device 20.
  • the curve A 21 represents the evolution of the magnetic field as a function of the longitudinal position in the device 21.
  • the curve A 22 represents the evolution of the magnetic field as a function of the longitudinal position in the device 22.
  • the magnetic field created downstream of the device 20 is more important than the magnetic fields created downstream of the devices 21 and 22 due to the arrangement of the means for generating a magnetic field downstream from the device 20 according to the invention and from the fact that the coil 18 used in the device according to the invention has larger dimensions than the devices of the prior art. This larger magnetic field downstream of the device makes it possible to focus the ion beam at the outlet of the plasma chamber.

Claims (11)

  1. Ionengenerator-Vorrichtung mit elektronischer Zyklotronresonanz, umfassend:
    - eine Plasmakammer (1), die dazu bestimmt ist, ein Plasma zu enthalten;
    - Mittel zum Erzeugen eines Magnetfeldes (4), die die elektrische Zyklotronresonanz in der Plasmakammer zulassen, wobei die Plasmakammer (1) an einem ersten Potenzial ist, wobei die Erzeugungsmittel eines Magnetfeldes (4) an einem zweiten Potenzial sind,
    - Verbreitungsmittel einer Hochfrequenzelle (5) im Innern der Plasmakammer,
    - eine isolierende Struktur (12), wobei die isolierende Struktur (12) ein vorgeschaltetes Ende (15), das am ersten Potenzial ist, und ein nachgeschaltetes Ende (16), das am zweiten Potenzial ist, aufweist,
    wobei das nachgeschaltete Ende der genannten isolierenden Struktur der Plasmakammer (1) vorgeschaltet ist und die Erzeugungsmittel eines Magnetfeldes (4) dem nachgeschalteten Ende der isolierenden Struktur (12) nachgeschaltet angeordnet sind.
  2. Vorrichtung gemäß dem voranstehenden Anspruch, dadurch gekennzeichnet, dass die isolierende Struktur (12) um wenigstens einen Teil der Verbreitungsmittel einer Hochfrequenzwelle (5) angeordnet sind.
  3. Vorrichtung gemäß irgendeinem der voranstehenden Ansprüche, dadurch gekennzeichnet, dass sie darüber hinaus einen Pumpstutzen (17) umfasst, der zwischen den Mitteln zum Erzeugen eines Magnetfeldes (4) und der isolierenden Struktur (12) angeordnet sind.
  4. Vorrichtung gemäß irgendeinem der voranstehenden Ansprüche, dadurch gekennzeichnet, dass sie darüber hinaus ein Extraktionssystem (11) umfasst, das geeignet ist, einen Ionenstrahl am Ausgang der Plasmakammer (1) zu bilden.
  5. Vorrichtung gemäß dem voranstehenden Anspruch, dadurch gekennzeichnet, dass das Extraktionssystem (11) der Plasmakammer (1) nachgeschaltet angeordnet ist.
  6. Vorrichtung gemäß irgendeinem der voranstehenden Ansprüche, dadurch gekennzeichnet, dass die Plasmakammer (1) eine nachgeschaltete Seite aufweist, die von einer Ausgangsöffnung (1b) durchbrochen ist, wobei das Extraktionssystem (11) eine erste Elektrode (11a) umfasst, die entlang der der Plasmakammer (1) nachgeschalteten Seite angeordnet ist.
  7. Vorrichtung gemäß irgendeinem der voranstehenden Ansprüche, dadurch gekennzeichnet, dass wenigstens ein Teil der Verbreitungsmittel einer Hochfrequenzwelle (5) ebenfalls am ersten Potenzial ist.
  8. Vorrichtung gemäß irgendeinem der voranstehenden Ansprüche, dadurch gekennzeichnet, dass sie darüber hinaus einen Trägerflansch (8), der die isolierende Struktur (12) trägt, sowie Mittel zum Erzeugen eines Magnetfeldes (4) umfasst.
  9. Vorrichtung gemäß dem voranstehenden Anspruch, dadurch gekennzeichnet, dass die Plasmakammer (1) zwischen der isolierenden Struktur (12) und dem Trägerflansch (8) angeordnet ist.
  10. Vorrichtung gemäß irgendeinem der Ansprüche 8 oder 9, dadurch gekennzeichnet, dass der Trägerflansch (8) an demselben Potenzial ist wie die Mittel zum Erzeugen eines Magnetfeldes (4).
  11. Vorrichtung gemäß irgendeinem der Ansprüche 8 bis 10, dadurch gekennzeichnet, dass der Trägerflansch (8) den Mitteln zum Erzeugen eines Magnetfeldes (4) vorgeschaltet angeordnet ist.
EP11811099.8A 2010-12-15 2011-12-13 Elektron-zyklotron-resonanzionenquelle Active EP2652766B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1060578A FR2969371B1 (fr) 2010-12-15 2010-12-15 Dispositif generateur d?ions a resonance cyclotronique electronique
PCT/FR2011/052961 WO2012080650A1 (fr) 2010-12-15 2011-12-13 Dispositif generateur d'ions a resonance cyclotronique electronique

Publications (2)

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EP2652766A1 EP2652766A1 (de) 2013-10-23
EP2652766B1 true EP2652766B1 (de) 2020-01-08

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US (1) US8835871B2 (de)
EP (1) EP2652766B1 (de)
FR (1) FR2969371B1 (de)
WO (1) WO2012080650A1 (de)

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Publication number Priority date Publication date Assignee Title
FR2969372B1 (fr) * 2010-12-21 2015-04-17 Commissariat Energie Atomique Dispositif d’ionisation a la resonance cyclotron electronique
US9591740B2 (en) 2013-03-08 2017-03-07 Tri Alpha Energy, Inc. Negative ion-based neutral beam injector
FR3039316B1 (fr) * 2015-07-21 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif generateur d'ions a resonance cyclotronique electronique
CN113982874B (zh) * 2021-11-24 2023-06-23 北京航空航天大学 一种微型离子推力器隔离电极电离室与离子光学引出结构

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Publication number Priority date Publication date Assignee Title
JPH0619961B2 (ja) * 1983-12-21 1994-03-16 株式会社日立製作所 マイクロ波イオン源
JP3058511B2 (ja) 1992-07-01 2000-07-04 松下電器産業株式会社 中国語文解析方法および中国語文解析装置
JPH0955170A (ja) * 1995-08-10 1997-02-25 Nissin Electric Co Ltd イオン源

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Publication number Publication date
WO2012080650A1 (fr) 2012-06-21
FR2969371B1 (fr) 2013-01-04
US20130327954A1 (en) 2013-12-12
FR2969371A1 (fr) 2012-06-22
EP2652766A1 (de) 2013-10-23
US8835871B2 (en) 2014-09-16

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