EP2612342A4 - Navigation und probenbearbeitung unter verwendung einer ionenquelle mit sowohl massearmen als auch massereichen spezies - Google Patents

Navigation und probenbearbeitung unter verwendung einer ionenquelle mit sowohl massearmen als auch massereichen spezies

Info

Publication number
EP2612342A4
EP2612342A4 EP11822623.2A EP11822623A EP2612342A4 EP 2612342 A4 EP2612342 A4 EP 2612342A4 EP 11822623 A EP11822623 A EP 11822623A EP 2612342 A4 EP2612342 A4 EP 2612342A4
Authority
EP
European Patent Office
Prior art keywords
mass
navigation
low
ion source
sample processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11822623.2A
Other languages
English (en)
French (fr)
Other versions
EP2612342B1 (de
EP2612342A2 (de
Inventor
Chad Rue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of EP2612342A2 publication Critical patent/EP2612342A2/de
Publication of EP2612342A4 publication Critical patent/EP2612342A4/de
Application granted granted Critical
Publication of EP2612342B1 publication Critical patent/EP2612342B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0805—Liquid metal sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources
    • H01J2237/0825—Multiple sources for producing different ions simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Electron Sources, Ion Sources (AREA)
EP11822623.2A 2010-08-31 2011-08-31 Navigation und probenbearbeitung unter verwendung einer ionenquelle mit sowohl massearmen als auch massereichen spezies Active EP2612342B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37864310P 2010-08-31 2010-08-31
PCT/US2011/050103 WO2012031049A2 (en) 2010-08-31 2011-08-31 Navigation and sample processing using an ion source containing both low-mass and high-mass species

Publications (3)

Publication Number Publication Date
EP2612342A2 EP2612342A2 (de) 2013-07-10
EP2612342A4 true EP2612342A4 (de) 2014-04-16
EP2612342B1 EP2612342B1 (de) 2018-08-22

Family

ID=45769990

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11822623.2A Active EP2612342B1 (de) 2010-08-31 2011-08-31 Navigation und probenbearbeitung unter verwendung einer ionenquelle mit sowohl massearmen als auch massereichen spezies

Country Status (5)

Country Link
US (1) US8455822B2 (de)
EP (1) EP2612342B1 (de)
JP (1) JP5922125B2 (de)
CN (1) CN103081054B (de)
WO (1) WO2012031049A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008094297A2 (en) * 2006-07-14 2008-08-07 Fei Company A multi-source plasma focused ion beam system
US8350237B2 (en) 2010-03-31 2013-01-08 Fei Company Automated slice milling for viewing a feature
US8633452B2 (en) 2011-07-13 2014-01-21 Fei Company Methods and structures for rapid switching between different process gases in an inductively-coupled plasma (ICP) ion source
US8822913B2 (en) * 2011-12-06 2014-09-02 Fei Company Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions
US9105438B2 (en) 2012-05-31 2015-08-11 Fei Company Imaging and processing for plasma ion source
EP2867915B1 (de) 2012-06-29 2016-07-13 FEI Company Multispezies-ionenquelle
EP2943769B1 (de) * 2013-01-11 2017-11-22 FEI Company Verfahren zur herstellung einer mikroskopischen struktur mittels eines fokussierten ionenstrahls
JP5464535B1 (ja) * 2013-07-23 2014-04-09 株式会社日立ハイテクノロジーズ Ｅｂｓｄ検出器で所望箇所を容易に分析できる荷電粒子線装置およびその制御方法
JP6753678B2 (ja) * 2016-03-25 2020-09-09 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置及びプラズマ点火方法
US9899181B1 (en) 2017-01-12 2018-02-20 Fei Company Collision ionization ion source
US9941094B1 (en) 2017-02-01 2018-04-10 Fei Company Innovative source assembly for ion beam production
DE102022102340B4 (de) * 2022-02-01 2023-11-23 Helmholtz-Zentrum Dresden - Rossendorf E. V. Ionen-implantationsverfahren, ionenfeinstrahlanlage, bauelement und herstellungsverfahren

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3705361A1 (de) * 1987-02-17 1988-08-25 Fraunhofer Ges Forschung Einrichtung zur zerstoerungsfreien bilderzeugung und ortsselektiven oberflaechenbearbeitung in fokussierten ionenstrahlsystemen
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3326176A (en) 1964-10-27 1967-06-20 Nat Res Corp Work-registration device including ionic beam probe
US4393311A (en) 1980-06-13 1983-07-12 Bell Telephone Laboratories, Incorporated Method and apparatus for surface characterization and process control utilizing radiation from desorbed particles
US4451738A (en) 1980-07-28 1984-05-29 National Research Development Corporation Microcircuit fabrication
US4367429A (en) 1980-11-03 1983-01-04 Hughes Aircraft Company Alloys for liquid metal ion sources
JPH0616391B2 (ja) 1984-07-13 1994-03-02 株式会社日立製作所 イオンビーム照射装置
EP0199585B1 (de) 1985-04-23 1990-07-04 Seiko Instruments Inc. Vorrichtung zur Abscheidung eines elektrisch leitenden und/oder nichtleitenden Materials auf einem Gegenstand
US4859908A (en) 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
JPH01132033A (ja) 1987-11-17 1989-05-24 Hitachi Ltd イオン源及び薄膜形成装置
EP0339554A3 (de) 1988-04-26 1989-12-20 Hauzer Holding B.V. Hochfrequenz-Ionenstrahlquelle
JPH0262039A (ja) 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
US4874459A (en) 1988-10-17 1989-10-17 The Regents Of The University Of California Low damage-producing, anisotropic, chemically enhanced etching method and apparatus
US5054097A (en) 1988-11-23 1991-10-01 Schlumberger Technologies, Inc. Methods and apparatus for alignment of images
DE4018954A1 (de) 1989-06-15 1991-01-03 Mitsubishi Electric Corp Trockenaetzgeraet
JPH07111336B2 (ja) 1990-02-07 1995-11-29 株式会社東芝 パターン寸法測定方法及び装置
JPH03272549A (ja) 1990-03-20 1991-12-04 Shimadzu Corp 高周波イオン源
US5149974A (en) 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
US5683547A (en) 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5188705A (en) 1991-04-15 1993-02-23 Fei Company Method of semiconductor device manufacture
WO1994013010A1 (en) 1991-04-15 1994-06-09 Fei Company Process of shaping features of semiconductor devices
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
JP3287858B2 (ja) 1991-05-15 2002-06-04 株式会社日立製作所 電子顕微鏡装置及び電子顕微方法
JPH04343040A (ja) 1991-05-21 1992-11-30 Hitachi Sci Syst:Kk 仕上げ用イオンガン付イオンミリング装置
JPH06176725A (ja) 1992-12-04 1994-06-24 Nissin Electric Co Ltd イオン源
JPH06342638A (ja) * 1993-06-02 1994-12-13 Hitachi Ltd 検査方法およびその装置
US5401972A (en) 1993-09-02 1995-03-28 Schlumberger Technologies, Inc. Layout overlay for FIB operations
JPH07312201A (ja) 1994-05-17 1995-11-28 Nissin Electric Co Ltd イオンド−ピング装置におけるイオンビ−ム運転方法
JPH07335163A (ja) 1994-06-13 1995-12-22 Nissin Electric Co Ltd イオンビーム発生方法およびその装置
JP3310136B2 (ja) 1994-09-17 2002-07-29 株式会社東芝 荷電ビーム装置
US5700526A (en) 1995-05-04 1997-12-23 Schlumberger Technologies Inc. Insulator deposition using focused ion beam
US6017221A (en) 1995-12-04 2000-01-25 Flamm; Daniel L. Process depending on plasma discharges sustained by inductive coupling
US5686796A (en) 1995-12-20 1997-11-11 International Business Machines Corporation Ion implantation helicon plasma source with magnetic dipoles
US7118996B1 (en) * 1996-05-15 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for doping
US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology
TW403959B (en) 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
GB9714142D0 (en) 1997-07-05 1997-09-10 Surface Tech Sys Ltd An arrangement for the feeding of RF power to one or more antennae
US5945677A (en) 1998-04-10 1999-08-31 The Regents Of The University Of California Focused ion beam system
US6451389B1 (en) 1999-04-17 2002-09-17 Advanced Energy Industries, Inc. Method for deposition of diamond like carbon
JP3597761B2 (ja) * 2000-07-18 2004-12-08 株式会社日立製作所 イオンビーム装置及び試料加工方法
US6838380B2 (en) 2001-01-26 2005-01-04 Fei Company Fabrication of high resistivity structures using focused ion beams
KR100444189B1 (ko) 2001-03-19 2004-08-18 주성엔지니어링(주) 유도결합 플라즈마 소스의 임피던스 정합 회로
JP2003016988A (ja) 2001-06-27 2003-01-17 Fujitsu Ltd フォーカストイオンビーム装置及びそれを利用したフォーカストイオンビーム加工方法
US20030000921A1 (en) 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
US7084407B2 (en) 2002-02-13 2006-08-01 The Regents Of The University Of California Ion beam extractor with counterbore
US6975072B2 (en) 2002-05-22 2005-12-13 The Regents Of The University Of California Ion source with external RF antenna
US7176469B2 (en) 2002-05-22 2007-02-13 The Regents Of The University Of California Negative ion source with external RF antenna
KR100707817B1 (ko) 2003-02-03 2007-04-13 가부시키가이샤 섬코 검사 방법, 해석편의 제작 방법, 해석 방법, 해석 장치,ｓｏｉ 웨이퍼의 제조 방법, 및 ｓｏｉ 웨이퍼
US7241361B2 (en) 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
US7002513B2 (en) 2004-03-26 2006-02-21 Topcon Gps, Llc Estimation and resolution of carrier wave ambiguities in a position navigation system
JP4224708B2 (ja) 2004-05-17 2009-02-18 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、周波数フィルタ、発振器、電子回路、薄膜圧電共振器、および電子機器
JP4224709B2 (ja) 2004-05-17 2009-02-18 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、周波数フィルタ、発振器、電子回路、薄膜圧電共振器、および電子機器
US7776156B2 (en) 2005-02-10 2010-08-17 Applied Materials, Inc. Side RF coil and side heater for plasma processing apparatus
US7388218B2 (en) 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
US7351966B1 (en) 2006-05-23 2008-04-01 International Business Machines Corporation High-resolution optical channel for non-destructive navigation and processing of integrated circuits
WO2008094297A2 (en) 2006-07-14 2008-08-07 Fei Company A multi-source plasma focused ion beam system
US7442916B2 (en) 2006-08-25 2008-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Lift detection adapted for navigation on a transparent structure
EP1936653B1 (de) * 2006-12-18 2014-01-15 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Gasfeldionenquelle für mehrere Anwendungen
EP1956634A1 (de) 2007-02-06 2008-08-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Verfahren und Vorrichtung zur Probenaufbereitung vor Ort
US7494937B2 (en) 2007-03-30 2009-02-24 Tokyo Electron Limited Strained metal silicon nitride films and method of forming
US7531452B2 (en) 2007-03-30 2009-05-12 Tokyo Electron Limited Strained metal silicon nitride films and method of forming
JP5055011B2 (ja) * 2007-04-23 2012-10-24 株式会社日立ハイテクノロジーズ イオン源
EP2056333B1 (de) * 2007-10-29 2016-08-24 ION-TOF Technologies GmbH Flüssigmetallionenquelle, Sekundärionenmassenspektrometer, sekundärionenmassenspektrometisches Analyseverfahren sowie deren Verwendungen
EP2088613B1 (de) * 2008-02-08 2015-10-14 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Verwendung einer Doppelmodus-Gasfeldionenquelle
US7732759B2 (en) 2008-05-23 2010-06-08 Tokyo Electron Limited Multi-plasma neutral beam source and method of operating
EP2332162A4 (de) 2008-10-12 2013-03-20 Fei Co Hochpräzise balkenplatzierung zur navigation in lokalen bereichen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3705361A1 (de) * 1987-02-17 1988-08-25 Fraunhofer Ges Forschung Einrichtung zur zerstoerungsfreien bilderzeugung und ortsselektiven oberflaechenbearbeitung in fokussierten ionenstrahlsystemen
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MIYAUCHI E: "Maskless all-UHV process for III-V compound semiconductors", CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES USA, vol. 17, no. 2, 1991, pages 107 - 131, XP009176596, ISSN: 1040-8436 *

Also Published As

Publication number Publication date
EP2612342B1 (de) 2018-08-22
JP5922125B2 (ja) 2016-05-24
CN103081054A (zh) 2013-05-01
WO2012031049A2 (en) 2012-03-08
JP2013536982A (ja) 2013-09-26
US20120056088A1 (en) 2012-03-08
CN103081054B (zh) 2016-04-13
EP2612342A2 (de) 2013-07-10
WO2012031049A4 (en) 2012-08-30
WO2012031049A3 (en) 2012-07-12
US8455822B2 (en) 2013-06-04

Similar Documents

Publication Publication Date Title
EP2612342A4 (de) Navigation und probenbearbeitung unter verwendung einer ionenquelle mit sowohl massearmen als auch massereichen spezies
EP2715772A4 (de) Ionenquelle für direkte probenanalyse
GB2486584B (en) Apparatus and methods for ion mobility spectrometry
GB2492664B (en) MALDI imaging and ion source
GB2477596B (en) System and method for replacing an ion source in a mass spectrometer
EP2656059A4 (de) Verfahren und vorrichtung für den nachweis von analytionen
GB2499587B (en) Apparatus and methods for ion mobility spectrometry
EP2927930B8 (de) Hybride ionenquelle, massenspektrometer und ionenmobilitätsvorrichtung
HK1198134A1 (en) Method and device for sample processing
EP2492677A4 (de) Probeneinführungsvorrichtung für ein ionenmobilitätsspektrometer, verfahren zu ihrer verwendung und ionenmobilitätsspektrometer
GB2518085B (en) Ion beam processing method and ion beam processing apparatus
PL2768377T3 (pl) Urządzenie do przygotowania przyrządów do ponownego użycia oraz sposoby przygotowania przyrządów do ponownego użycia
EP2608872A4 (de) Verfahren und vorrichtung für neutrale strahlenverarbeitung auf basis einer cluster-ionenstrahl-technologie
EP2560186A4 (de) Ionenstrahlvorrichtung und ionenstrahlverarbeitungsverfahren
EP2558838A4 (de) Vorrichtung und verfahren zur herstellung von ionenstrahlproben
EP2561540A4 (de) Verbesserte ionenquelle
EP2558839A4 (de) Vorrichtung und verfahren zur herstellung von ionenstrahlproben
HK1213987A1 (zh) 標本處理系統和用於保持載片的方法
EP3087194A4 (de) Vorrichtungen und verfahren zur verarbeitung einer biologischen probe
GB2530966B (en) Hybrid ion source and mass spectrometric device
EP2967424A4 (de) System und verfahren zur verarbeitung einer biopsieprobe
EP2867915A4 (de) Multispezies-ionenquelle
PL2789007T3 (pl) Układy, urządzenia i sposoby do analizy próbki z wykorzystaniem spektrometrii mas
EP2558836A4 (de) Vorrichtung und verfahren zur herstellung von ionenstrahlproben
GB201104665D0 (en) Ion analysis apparatus and methods

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20130227

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20140318

RIC1 Information provided on ipc code assigned before grant

Ipc: H01J 37/304 20060101ALI20140312BHEP

Ipc: H01J 37/305 20060101ALI20140312BHEP

Ipc: H01J 37/20 20060101AFI20140312BHEP

Ipc: H01J 37/08 20060101ALI20140312BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20180223

GRAJ Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR1

INTC Intention to grant announced (deleted)
GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20180508

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1033425

Country of ref document: AT

Kind code of ref document: T

Effective date: 20180915

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602011051374

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20180822

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181222

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181123

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181122

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181122

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1033425

Country of ref document: AT

Kind code of ref document: T

Effective date: 20180822

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180831

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180831

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180831

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20180831

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602011051374

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20181122

26N No opposition filed

Effective date: 20190523

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20181022

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180831

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20181122

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180831

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20110831

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180831

Ref country code: MK

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180822

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180822

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230814

Year of fee payment: 13