EP2558838B1 - Vorrichtung und verfahren zur herstellung von ionenstrahlproben - Google Patents

Vorrichtung und verfahren zur herstellung von ionenstrahlproben Download PDF

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Publication number
EP2558838B1
EP2558838B1 EP11769334.1A EP11769334A EP2558838B1 EP 2558838 B1 EP2558838 B1 EP 2558838B1 EP 11769334 A EP11769334 A EP 11769334A EP 2558838 B1 EP2558838 B1 EP 2558838B1
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EP
European Patent Office
Prior art keywords
shield
retention stage
sample
retention
ion beam
Prior art date
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Active
Application number
EP11769334.1A
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English (en)
French (fr)
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EP2558838A2 (de
EP2558838A4 (de
Inventor
John Andrew Hunt
Steven Thomas Coyle
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Gatan Inc
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Gatan Inc
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Publication of EP2558838A2 publication Critical patent/EP2558838A2/de
Publication of EP2558838A4 publication Critical patent/EP2558838A4/de
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3118—Drilling

Definitions

  • the present disclosure relates to the use of one or more ion beams to prepare materials for microscopic observation or spectroscopic analysis.
  • Microscopic observational techniques include, but are not limited to, optical microscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), reflection electron microscopy (REM).
  • Spectroscopic analysis techniques include, but are not limited to, x-ray micro-analysis, reflection electron energy-loss spectroscopy (REELS), electron back-scattered diffraction (EBSD), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). Materials to be viewed under any microscopic technique may require processing to produce a sample suitable for microscopic examination.
  • Ion beam milling of a material can produce samples that are well suited for microscopic examination.
  • An ion beam irradiating device may generate, accelerate, and direct a beam of ions toward a sample.
  • the impact of ions on the sample sputters material away from the area of ion impact.
  • the sample surface may be polished by the ion beam to a substantially smooth condition further enhancing observational properties of the sample. Regions of interest in the sample may be exposed and polished by the use of ion beams thus making a suitable observational sample from the material under investigation.
  • Broad Ion Beam Slope-Cutting also known as cross section cutting using broad ion beam sources or cross section polishing using broad ion beam sources, is a rapid method for removing sample material to expose a smooth and substantially artifact-free cross-sectional surface for ultimate analysis by various microscopies and spectroscopies.
  • a notable advantage of the BIBSC technique is high rates of surface preparation that can exceed tens or hundreds or thousands of square microns per hour, often over sample milling times of tens or hundreds of minutes.
  • Important considerations to users of the BIBSC technique include: reducing or minimizing the effort and time that the user is occupied in processing the sample; reducing or minimizing the number of steps where delicate samples are directly handled and at risk for damage, such as during mounting to sample holders for processing or analysis; reducing or minimizing the time and effort the user is occupied transferring the sample into the ultimate analysis equipment (imaging or spectroscopy), and aligning the coordinates of the prepared sample region to the ultimate analysis equipment prior to analysis; ensuring high quality and high probability of success in processing and imaging the sample; reducing or minimizing the time that the BIBSC ion milling equipment and sample mounting equipment are occupied for each sample; and ensuring high-quality microscopy observation of the sample during sample mounting and ultimate analysis by reducing the working distance required between the sample and the objective or probe-forming lens used for observation.
  • Ion beam milling takes place in a suitably evacuated environment. While a sample may be loaded and unloaded by the user at atmospheric pressure, ion beam processing must take place under vacuum like conditions. A near-vacuum environment that is suitable for ion beam milling of samples takes time to establish. The time required to obtain a suitably evacuated environment is proportional to the volume that must be evacuated prior to the commencement of ion beam milling. Embodiments of the present disclosure teach apparatus and methods of sample loading and processing that reduce the evacuated volume during sample loading and unloading, thereby enabling greater efficiencies in the processing of samples.
  • Embodiments of the present disclosure teach apparatus, and methods of using that apparatus, to manage the thermal environment of a sample. Embodiments of improved thermal control over the sample may be beneficially combined with embodiments offering improved sample loading and processing to achieve even greater efficiencies in the processing of samples.
  • US patent number 6,914,244 is prior art in this technical field.
  • an ion beam milling system and method for electron microscopy specimen preparation is provided and is useful for the preparation for analysis by either TEM or SEM of semiconductors, metals, alloys, ceramics, and other inorganic materials.
  • a system and process are provided for the preparation of specimens for analysis by transmission electron microscopy including a specimen processing chamber, at least two ion beam generators, and a specimen support or holder.
  • An ion beam masking member is secured to a surface of the specimen and the specimen is milled.
  • the system also includes the ability to view the progress of the milling operation and may include an imaging device such as a light microscope which permits monitoring of the area of interest on a specimen as the specimen is milled.
  • Patent application EP1684327 A2 discloses a sampler holder for an ion-beam processing system. The sample is stuck to the holder with adhesive. A belt-like shielding material masks the sample from the ion-beam.
  • Patent application EP 1195795 A2 discloses a vacuum chamber with a small load lock chamber with a raising mechanism for handling circuit wafers, such as by evaporation, vapour deposition, sputtering , plasma etching and the like.
  • the wafer support and a cover form the load-lock chamber between them.
  • the present disclosure is directed to ion beam sample preparation apparatus and methods for using the disclosed apparatus to prepare samples for later observation.
  • the apparatus has features to quickly and repeatably retain and release both unprepared samples and prepared samples, thereby facilitating preparation of samples in the ion beam apparatus and also facilitating the observation of the prepared samples in an observation apparatus.
  • Features of the disclosure enable accurate and repeatable positioning of the sample both within the ion beam sample preparation apparatus and within observation apparatus later used for observing prepared samples.
  • Sample loading and processing features of the present disclosure work to reduce the volume requiring evacuation after sample loading.
  • Sample loading and processing features also work to maintain a vacuum-like environment in a substantial portion of the vacuum chamber, even while the sample is being loaded at atmospheric pressure.
  • Thermal management features of the present disclosure work to manage the thermal environment of the sample being prepared. The temperature of the sample undergoing ion beam sample preparation may thereby be influenced by the thermal environment created by the apparatus.
  • An embodiment according to the present disclosure of an apparatus for ion beam sample preparation comprises: an ion beam irradiating means disposed in a vacuum chamber and directing an ion beam toward a shield retention stage; the shield retention stage being disposed in the vacuum chamber; said shield retention stage comprising: a first datum feature; a second datum feature; a shield retention means having at least a shield releasing position and a shield retaining position; a retention stage lifting means coupled to said shield retention stage and configured to move said shield retention stage between a retention stage loading position and a retention stage processing position, characterized in that when the retention stage lifting means is in said retention stage loading position, a substantially vacuum-tight loading chamber is created between the shield retention stage and a portion of the vacuum chamber, and further characterized in that when the retention stage lifting means is in said retention stage loading position, a substantially vacuum-tight seal is created between the loading chamber and the portion of the vacuum chamber in which the ion beam irradiating means is disposed; a lift drive coupled to said retention stage lifting means
  • the shield retention stage further comprises a fifth datum feature
  • the shield further comprises a sixth datum feature formed integrally with the shield, wherein the shield retention means in said shield retaining position urges said sixth datum feature to abut said fifth datum feature.
  • the first shielding surface meets said proximal sample surface at an angle of less than about 90 degrees and more than about 80 degrees.
  • the first shielding surface meets said proximal sample surface at an angle of less than about 87 degrees and more than about 83 degrees.
  • the first shielding surface is made of non-magnetic material having low sputtering-yield.
  • At least a portion of the first shielding surface is made of tantalum or titanium.
  • the third datum feature is a datum surface and at least a portion of said datum surface is coextensive with at least a portion of said proximal sample surface.
  • the proximal sample surface has at least one recessed portion configured for the flowing of adhesive between the shield and the sample.
  • the shield further comprises a sample clamping means coupled to the shield and configured to hold the sample against said proximal sample surface.
  • the shield further comprises: a second shielding surface having a portion disposed in the path of a portion of the ion beam; a shield edge formed where the first shielding surface meets the proximal sample surface; and a visible alignment mark on the second shielding surface, configured such that the location of said alignment mark is in a predetermined relationship to the region where the ion beam impinges on said shield edge when said shield is held in the shield retaining position of the shield retention means.
  • the shield is made of a cladding material joined to a core material such that a portion of the cladding material forms at least a portion of the first shielding surface, and a portion of the core material forms the third and fourth datum features of the shield.
  • the cladding material is a non-magnetic material having low sputtering-yield.
  • Another embodiment of the present disclosure is directed to an apparatus for ion beam sample preparation which comprises: an ion beam irradiating means disposed in a vacuum chamber and directing an ion beam toward a shield retention stage; the shield retention stage being disposed in the vacuum chamber; said shield retention stage comprising: a first datum feature; a second datum feature; a shield retention means having at least a shield releasing position and a shield retaining position; a retention stage lifting means coupled to said shield retention stage and configured to move said shield retention stage between a retention stage loading position and a retention stage processing position, characterized in that when the retention stage lifting means is in said retention stage loading position, a substantially vacuum-tight loading chamber is created between the shield retention stage and a portion of the vacuum chamber, and further characterized in that when the retention stage lifting means is in said retention stage loading position a substantially vacuum-tight seal is created between the loading chamber and the portion of the vacuum chamber in which the ion beam irradiating means is disposed; a lift drive coupled to said retention stage lifting
  • the heat sink means is configured to use nitrogen to conduct heat away from the first thermal transfer member.
  • the shield is made of a cladding material joined to a core material such that a portion of the cladding material forms at least a portion of the first shielding surface, and a portion of the core material forms the third and fourth datum features of the shield.
  • the core material has high thermal conductivity.
  • the core material comprises copper.
  • Another embodiment of the present disclosure is directed to an apparatus for ion beam sample preparation which comprises: an ion beam irradiating means disposed in a vacuum chamber and directing an ion beam toward a shield retention stage; the shield retention stage being disposed in the vacuum chamber; said shield retention stage comprising: a first datum feature; a second datum feature; a shield retention means having at least a shield releasing position and a shield retaining position; a retention stage lifting means coupled to said shield retention stage and configured to move said shield retention stage between a retention stage loading position and a retention stage processing position, characterized in that when the retention stage lifting means is in said retention stage loading position, a substantially vacuum-tight loading chamber is created between the shield retention stage and a portion of the vacuum chamber, further characterized in that when the retention stage lifting means is in said retention stage loading position, a substantially vacuum-tight seal is created between the loading chamber and the portion of the vacuum chamber in which the ion beam irradiating means is disposed, and further characterized in that when the retention stage
  • the Broad Ion Beam Slope-Cutting (BIBSC) sample preparation procedure can be described as a series of process steps, p1-p5:
  • Embodiments of the present disclosure uniquely permit certain efficiencies and capabilities in the processing and subsequent observation and analysis of BIBSC produced samples.
  • Beneficial features, functions, and aspects of the present disclosure include, but are not limited to:
  • FIG 1A illustrated is a schematic cross-sectional view of an embodiment of an ion beam sample preparation apparatus 2.
  • the embodiment of FIG 1A is shown comprising: a vacuum chamber 10 in which a sample may be prepared by an ion beam irradiating means 20; a removable and replaceable chamber cover 18, which, when removed from chamber 10, allows access for sample and shield loading; a first pumping manifold 92a and a vacuum pump means 90, which together bring vacuum chamber 10 to vacuum levels appropriate for ion beam milling; a shield retention stage 40 and a shield retention means 42, the shield retention means 42 being shown in FIG 1A in a shield releasing position 48; a retention stage lifting means 100, which is coupled to said shield retention stage 40; a lift drive 102 operably coupled to said retention stage lifting means 100 wherein the shield retention stage may be lifted into a retention stage loading position 104, and vacuum seal 56 which allows the retention stage lifting means to move up and down while maintaining vacuum seal between vacuum chamber 10 and the outside atmosphere.
  • shield retention stage 40 When shield retention stage 40 is raised to retention stage loading position 104, a loading chamber 16 is created. When in the retention stage loading position 104, vacuum sealing features of the shield retention stage 40 engage with vacuum sealing features of the vacuum chamber 10, and function to isolate said vacuum chamber from the outside atmosphere.
  • FIG 1B shows the same embodiment as FIG 1A , additionally showing a shield 60 with a sample 8 durably adhered to the shield has been placed in the shield retention stage 40 and is held in the stage by shield retention means 42 in a shield retaining position.
  • FIG 1C shows the same embodiment as FIG 1B , additionally showing that chamber cover 18 has been placed on vacuum chamber 10 to seal loading chamber 16 from the outside atmosphere.
  • the volume of loading chamber 16 is substantially smaller than the volume of vacuum chamber 10.
  • second pumping manifold 92b and pumping means 90 may be used to evacuate loading chamber 16 in preparation for lowering the shield retention stage into the retention stage processing position.
  • the retention stage lifting means may be activated to lower the shield retention stage in preparation for ion beam milling of the sample.
  • FIG 2 shows the same embodiment as FIG 1C .
  • retention stage lifting means 100 and lift drive 102 have operated to lower the shield retention stage 40 into a retention stage processing position 106.
  • the embodiment of FIG 2 is shown comprising ion beam irradiating means 20, which directs an ion beam having a central ion beam axis 22 toward sample 8, and a shield 60, which shields at least a portion of sample 8 from at least a portion of the ion beam.
  • the sequence of steps illustrated in figures FIG 1A, FIG 1B , FIG 1C, and FIG 2 may be reversed to raise the sample to the retention stage loading position, remove chamber cover 18, and remove the shield and sample combination for observation in a microscope.
  • the ion beam preferably comprises noble gas ions.
  • Elements used for the ion beam may include, but are not limited to: Argon, Xenon, and Krypton.
  • the ion beam may also comprise a mixture of ions and neutrals.
  • a material with good thermal conductivity may be used to improve thermal transfer between shield and the shield retention stage, said material including, but not limited to, a substantially non-magnetic metal.
  • a material with good thermal conductivity can be used as a core material 66 to improve thermal transfer between shield and the shield retention stage, and a substantially non-magnetic material with low sputtering-yield may be used as a cladding material 67 over the core material, whereby the cladding material forms at least part of the shielding surface 61 of shield 60.
  • FIG 13A and FIG 13B illustrate two different embodiments of shield 60, wherein each embodiment is shown comprising a combination of core material 66 and cladding material 67.
  • FIG 3A shows a perspective view of shield retention stage 40 on which sample 8 has been durably adhered to shield 60 prior to placing the shield and sample combination in a shield retaining position in shield retention stage 40.
  • Shield 60 has a shielding surface 61, which is positioned in relation to sample 8 to shield at least a portion of said sample 8 from at least a portion of the ion beam.
  • Also shown in FIG 3A is a section line indicating the section view shown in FIG 3B .
  • FIG 3B shows a section view illustrating the position and function of the shield retention means, which is part of shield retention stage 40.
  • FIG 3B shows an embodiment of the shield retention means in shield retaining position 46, the shield retention means comprising a shield retention means first member 42a and a shield retention means second member 42b.
  • Shield retention means first member 42a urges shield retention means second member 42b against shield 60.
  • the action of shield retention means first member also urges shield 60 against shield retention stage 40, and thereby maintains the position of shield 60 within shield retention stage 40 while the sample is prepared by ion beam.
  • An embodiment of the shield retention means may comprise a spring for shield retention means first member 42a and a solid member as shield retention means second member 42b configured to slide within a cavity in shield retention stage 40.
  • FIG 4 shows a view from the same sectional plane as in FIG 3B .
  • the shield and sample have been removed to show a shield releasing position 48 of shield retention means.
  • shield retention means namely shield retaining position 46 as shown in FIG 3A and FIG 3B
  • shield releasing position 48 as shown in FIG 4
  • a shield may be removably and replaceably secured in shield retention stage 40.
  • a sample that has been durably adhered to shield 60 may be processed, removed, and then reprocessed by simply placing it in the shield retaining position and preparing the sample again in the ion beam.
  • FIG 5A shows a perspective view of shield retention stage 40, on which shield 60 is retained, wherein said shield has a shielding surface 61.
  • FIG 5A also shows a sectional plane used for FIG 5B .
  • FIG 5B shows a sectional perspective view illustrating physical features of both shield 60 and shield retention stage 40, which facilitate accurate and repeatable positioning of the shield with respect to the shield retention stage.
  • the positioning of shield 60 assures that shielding surface 61 and shield edge 63 are accurately positioned and accurately oriented with respect to the shield retention stage and are positioned with respect to central ion beam axis 22 to intercept at least a portion of the ion beam directed toward the sample.
  • FIG 6 shows a sectional perspective view as in FIG 5B in which preferred embodiments of both shield 60 and shield retention stage 40 have a plurality of datum features 70a, 70b, 70c, 70d, 70e, and 70f.
  • shield 60 has been removed from shield retention stage 40 and the shield is turned to expose a proximal sample surface 62 upon which a sample may be durably adhered prior to sample preparation by the ion beam.
  • the plurality of datum features 70a, 70b, 70c, 70d, 70e, and 70f is provided on both shield 60 and shield retention stage 40 and the datum features enable accurate and repeatable positioning of the shield 60 with respect to the shield retention stage 40.
  • Datum features 70b, 70d, and 70f on the shield are shaped and positioned such that when they are caused to abut complementary datum features 70a, 70c, and 70e on the shield retention stage the shield may be held in a predetermined position and a predetermined orientation with respect to the central ion beam axis 22.
  • Shield retention means 42 assures that datum features 70b, 70d, and 70f of shield 60 abut the corresponding datum features 70a, 70c, and 70e of the shield retention stage 40 when the shield is held in the shield retaining position.
  • Shield edge 63 also visible in FIG 6 , is also caused to be in a predetermined position and predetermined orientation when the shield is held in the shield retaining position.
  • Datum features are arranged in pairs such that a datum feature on the shield has a corresponding datum feature on the shield retention stage.
  • one such pair of datum features is datum feature 70a on the shield retention stage and datum feature 70b on the shield.
  • Another pair of datum features shown in FIG 6 is datum feature 70c on the shield retention stage and datum feature 70d on the shield.
  • Another pair of datum features shown in FIG 6 is datum feature 70e on the shield retention stage and datum feature 70f on the shield.
  • the shield retention means acts to urge the pairs of datum features to abut, thereby constraining the position of the shield with respect to the position of the shield retention stage.
  • Datum features may be datum surfaces, as is shown in the preferred embodiment of FIG 6 , or they may be datum edges, datum vertices, or combinations of datum surfaces, datum edges, and datum vertices.
  • FIG 7A, FIG 7B, FIG 8A, FIG 8B, FIG 9, and FIG 10 shown are various features and embodiments of shield 60 according to the present disclosure.
  • FIG 7A is a perspective view of a shield showing a first shielding surface 61a, a second shielding surface 61b, and shield edge 63. Ions from the ion beam irradiating means that are blocked by the shield, and, in particular, the ions that are blocked by first shielding surface 61a are prevented from milling the sample. Ions not blocked by the shield may be used to prepare the sample for observation and analysis. When the ion beam is operating, ions may or may not impact second shielding surface 61b.
  • second shielding surface 61b depends on a number a factors including, but not limited to: the size of the ion beam; the angle at which the ion beam is directed; and the position at which the ion beam is directed. It is a preferred embodiment of the shield that second shielding surface 61b be made of the same material as first shielding surface 61a.
  • shield 60 is a generally planar rigid member, having one or more shielding surfaces that are smooth and may be polished, having a datum surface and at least an additional datum feature for facilitating accurate placement within the shield retention stage.
  • Preferred materials for the shield are non-magnetic metals with low sputter yield including, but not limited to, tantalum or titanium.
  • Lower cost embodiments of shield 60 may comprise core material 66 for the majority of the shield and cladding material 67 used for the shielding surfaces.
  • Preferred core materials include, but are not limited to, copper.
  • Preferred cladding materials include, but are not limited to, tantalum or titanium.
  • FIG 13A and FIG 13B illustrate two different embodiments of a shield 60, wherein each embodiment is shown comprising a combination of core material 66 and cladding material 67.
  • FIG 7B shows the same shield as shown in FIG 7A , but from a different angle, thereby illustrating the position and nature of a plurality of datum features 70d and 70f.
  • FIG 8A shows the same shield as shown in FIG 7A and FIG 7B.
  • FIG 8A shows a perspective view of shield 60 from the side of the shield closest to the sample during ion beam sample preparation.
  • Proximal sample surface 62 may be used to adhere the sample material to be prepared in the apparatus.
  • Datum surface 72 is a datum feature that is a surface. In a preferred embodiment, at least a portion of proximal sample surface 62 may be coextensive with at least a portion of datum surface 72.
  • Shield edge 63 is formed by the intersection of first shielding surface 61a and proximal sample surface 62. The angle between first shielding surface 61a and proximal sample surface 62 has an impact on the quality of milling performed on the sample by the ion beam.
  • a preferred embodiment is achieved when said first shielding surface 61a meets said proximal sample surface 62 at an angle of less than about 90 degrees and more than about 80 degrees. An even more preferred embodiment is achieved when said first shielding surface 61a meets said proximal sample surface 62 at an angle of less than about 87 degrees and more than about 83 degrees.
  • FIG 8B shows the same shield as shown in FIG 8A , but from a different angle, thereby illustrating the position and nature of a plurality of datum features 70d and 70f, and datum surface 72, present on shield 60.
  • FIG 9 shows a perspective view of shield 60 having first shielding surface 61a, second shielding surface 61b, shield edge 63, and additionally comprising a visible alignment mark 65.
  • the visible alignment mark is positioned so that it indicates the approximate location where a portion of the ion beam will pass over shield edge 63 and impact the sample when the shield edge is substantially perpendicular to the central ion beam axis.
  • FIG 10 shows a perspective view of shield 60 from the side of the shield closest to the sample during ion beam sample preparation.
  • Proximal sample surface 62 may be used to adhere the sample material to the shield prior to ion beam sample preparation in the apparatus.
  • Recessed portion 64 provides a recessed portion of proximal sample surface 62 useful for flowing adhesive under the sample, thereby facilitating the durable adhering of sample to shield.
  • Preferred materials used to adhere the sample to the shield include, but are not limited to: UV cured glue, light cured glue, superglue, silver paint, and wax.
  • FIG 11A shown is a perspective view of shield 60, shielding surface 61, sample 8 durably adhered to the shield, and visible alignment mark 65.
  • FIG 11A depicts the sample prior to ion beam preparation.
  • FIG 11B is a perspective view of the same objects depicted in FIG 11A . However, FIG 11B represents the sample after ion beam sample preparation.
  • Shielding surface 61 intercepts a portion of the ion beam, which travels along central ion beam axis 22.
  • a portion of sample 8 is sputtered away by the ion beam during sample preparation, thereby exposing a portion of the sample lying in the plane defined by shield edge 63 and central ion beam axis 22.
  • a sample prepared in this way will be suitable for observation or analysis with a variety of microscopic or spectroscopic techniques, particularly those requiring a highly polished planar surface.
  • FIG 12A and FIG 12B illustrate another embodiment of shield 60, in which a sample clamping means 68 is formed integrally with the shield on the proximal sample surface 62.
  • FIG 12A depicts this shield prior to clamping a sample
  • FIG 12B depicts this shield after sample 8 has been secured to the shield by means of sample clamping means 68.
  • sample clamping means 68 may be formed separately and then coupled to the shield prior to clamping the sample. Adhesive may be applied between the sample clamping means and the sample to further ensure the sample does not move with respect to the shield.
  • a sample may be durably adhered to a shield.
  • the shield retention stage may be moved to the retention stage loading position, thereby creating a loading chamber that is vacuum-tight with respect to the portion of the vacuum chamber in which the ion beam irradiating means is disposed.
  • the loading chamber may be pressurized to atmospheric pressure by operation of the vacuum pump means through the second pumping manifold.
  • the chamber cover may then be removed. With the chamber cover removed, the shield and sample combination may be secured in the shield retaining position of the shield retention stage. The chamber cover may then be replaced.
  • the vacuum pump means may be operated to evacuate the loading chamber through the second pumping manifold thereby obtaining vacuum levels substantially below atmospheric pressure.
  • the retention stage lifting means and lift drive may then be operated to move the shield retention stage to the retention stage processing position.
  • the vacuum pump means may operate throughout the loading process through the first pumping manifold to maintain vacuum levels in the vacuum chamber.
  • the ion beam irradiating means may then be operated to prepare the sample. When the sample has been prepared to the extent desired by the user of the apparatus, the ion beam irradiating means may be turned off. Then the retention stage lifting means and lift drive may operate to move the shield retention stage back to the retention stage loading position.
  • the loading chamber may be pressurized to atmospheric pressure without disturbing the vacuum in the remainder of the vacuum chamber.
  • the chamber cover may be removed, and the prepared sample may be removed from the apparatus along with the shield to which it was previously adhered.
  • a microscope may be fitted with a shield retention stage so that the prepared sample and shield may be retained and thereby the prepared region of the sample may be observed in the microscope. After observation, the user may decide that additional sample preparation is needed. Since the sample is still durably adhered to the shield, it is a simple matter to return the sample and shield to the vacuum chamber for additional processing.
  • the datum features on both the shield and the shield retention stage ensure that the shield may be retained in substantially the same position and orientation each time the sample is processed in the apparatus.
  • a kit comprising a shield retention stage 40 with a plurality of datum features 70a, 70c, and 70e, shield retention means 42, and at least one shield 60 with a plurality of datum features 70b, 70d, and 70f may be supplied for fitting to a microscope. Such a kit facilitates the microscopic observation of samples prepared in the ion beam sample preparation apparatus 2.
  • FIG 14A illustrated is a schematic cross-sectional view of an embodiment of an ion beam sample preparation apparatus 2 adapted to control the temperature of shield retention stage 40.
  • the embodiment of FIG 14A is shown comprising: a vacuum chamber 10 in which a sample may be prepared by an ion beam irradiating means 20; a removable and replaceable chamber cover 18, which, when removed from chamber 10, allows access for sample and shield loading; a first pumping manifold 92a and a pumping means 90, which together bring vacuum chamber 10 to vacuum levels appropriate for ion beam milling; a shield retention stage 40 and a shield retention means 42, the shield retention means 42 being shown in FIG 14A in a shield retaining position; a retention stage lifting means 100 which is coupled to said shield retention stage 40; a lift drive 102 operably coupled to said retention stage lifting means 100, wherein the shield retention stage may be moved between a retention stage loading position 104 as shown in FIG 14A and a retention stage processing position 106 as shown in FIG 14B , and vacuum seal 56
  • the apparatus of FIG 14A is shown further comprising: a thermal transfer member 80, which is in thermally conductive contact with shield retention stage 40, and heat sink means 84, which facilitates heat exchange between thermal transfer member 80 and a heat exchange fluid or gas.
  • shield retention means 42 When shield retention means 42 is in the shield retaining position, it urges thermally conductive contact between shield 60 and shield retention stage 40, thereby facilitating heat exchange between shield and shield retention stage.
  • shield retention stage 40 is raised to retention stage loading position 104 a loading chamber 16 is created.
  • vacuum sealing features of the shield retention stage 40 engage with vacuum sealing features of the vacuum chamber 10 and function to isolate said vacuum chamber from the outside atmosphere.
  • Second pumping manifold 92b and pumping means 90 may be used to evacuate loading chamber 16 in preparation for lowering the shield retention stage into the retention stage processing position.
  • the volume of loading chamber 16 is substantially smaller than the volume of vacuum chamber 10.
  • the ion beam preferably comprises noble gas ions.
  • Elements used for the ion beam may include but are not limited to: Argon, Xenon, and Krypton.
  • the ion beam may also comprise a mixture of ions and neutrals.
  • Heat sink means 84 may use gaseous nitrogen, liquid nitrogen, other gases, or other liquids as a heat absorbing medium. Heat sink means 84 may additionally comprise temperature control means capable of substantially maintaining thermal transfer member 80 at a predetermined temperature.
  • Shield retention stage 40 of FIG 14A and FIG 14B has the same features and functions possessed by shield retention stage 40 shown in FIG 1A, FIG 1B , FIG 1C, FIG 2 , FIG 3A, FIG 3B, FIG 4 , FIG 5A, FIG 5B, and FIG 6 .
  • shield 60 of FIG 14A and FIG 14B has the same features, functions, and aspects possessed by shield 60 shown in figures FIG 3A, FIG 3B , FIG 5A, FIG 5B , FIG 6 , FIG 7A, FIG 7B, FIG 8A, and FIG 8B .
  • a material with good thermal conductivity can be used to improve thermal transfer between shield and the shield retention stage, said material including, but not limited to, a substantially non-magnetic metal.
  • FIG 13A and FIG 13B show other preferred embodiments of shield 60 in which a material with good thermal conductivity can be used as a core material to improve thermal transfer between shield and the shield retention stage, and a substantially non-magnetic material with low sputtering-yield may be used as a cladding material over the core material, whereby the cladding material forms at least part of the shielding surface 61 of shield 60.
  • FIG 14B shows the same apparatus as FIG 14A .
  • the retention stage lifting means 104 and lift drive 102 have operated to move shield retention stage 40 into retention stage processing position 106.
  • shield retention stage 40 is disposed in vacuum chamber 10 in a predetermined position and orientation with respect to central ion beam axis 22.
  • the shield retention stage 40 datum features allow the interchangeable use of shield 60 previously described.
  • a shield may be removable and replaceably secured in shield retention stage 40.
  • a sample that has been durably adhered to shield 60 may be processed, removed, and then reprocessed by simply placing it in the shield retaining position and preparing the sample again in the ion beam.
  • the datum features on both shield and shield retention stage assure that the shield may be positioned in a substantially identical position and orientation multiple times.
  • the thermal transfer member and heat sink means shown in the embodiment of FIG 14A and FIG 14B give the user additional capabilities.
  • the thermal control works particularly well in concert with the retention stage lifting means, lift drive, and isolated loading chamber that is created when in the retention stage loading position. It may be the case that a sample is prepared in the ion beam while the sample is held at low temperature. Such a temperature may be below the dew point of the local atmosphere immediately outside of the apparatus.
  • the heat sink means may be beneficially used to bring the temperature of the shield retention stage above the local dew point before the user takes the chamber cover off to access the shield retention stage.
  • the retention stage lifting means creates another benefit in that the creation of the loading chamber significantly reduces the volume of the apparatus that must be exposed to the ambient atmosphere during sample loading and unloading. This is a tremendous time saver whenever the temperature of the shield retention stage must be raised or lowered to match the ambient atmospheric temperature.
  • FIG 15A and FIG 15B illustrated is a schematic cross-sectional view of another embodiment of an ion beam sample preparation apparatus 2.
  • the apparatus of FIG 15A and FIG 15B is adapted to control the temperature of shield retention stage 40 by means of a different configuration than the embodiment of FIG 14A and 14B .
  • FIG 15A The embodiment of FIG 15A is shown comprising: a vacuum chamber 10, in which a sample may be prepared by an ion beam irradiating means 20; a removable and replaceable chamber cover 18, which, when removed from chamber 10, allows access for sample and shield loading; a first pumping manifold 92a and a pumping means 90, which together bring vacuum chamber 10 to vacuum levels appropriate for ion beam milling; a shield retention stage 40 and a shield retention means 42, the shield retention means 42 being shown in FIG 15A in a shield retaining position; a retention stage lifting means 100, which is coupled to said shield retention stage 40; a lift drive 102, operably coupled to said retention stage lifting means 100, wherein the shield retention stage may be moved between a retention stage loading position 104, as shown in FIG 15A , and a retention stage processing position 106, as shown in FIG 15B , and vacuum seal 56, which allows the retention stage lifting means to move up and down while maintaining vacuum seal between vacuum chamber 10 and the outside atmosphere.
  • a vacuum chamber 10 in
  • FIG 15A and FIG 15B are shown further comprising a thermal transfer member 80 and a heat sink means 84, which together facilitate heat exchange between thermal transfer member 80 and heat sink means 84.
  • FIG 15A and FIG 15B The apparatus of both FIG 15A and FIG 15B are shown with a sample 8 durably adhered to a shield 60.
  • the sample and shield combination are shown held in a shield retaining position of the shield retention means 42.
  • Shield retention stage 40 and shield 60 work in the same way and have the same features and aspects as the shield retention stage and shield shown in FIG 1A, FIG 1B , FIG 1C, FIG 2 , FIG 3A, FIG 3B, FIG 4 , FIG 5A, FIG 5B, FIG 6 , FIG 7A, FIG 7B, FIG 8A, FIG 8B , all previously described in the present disclosure.
  • the shield retention stage of FIG 15A and FIG 15B has additional features that allow it to engage, in thermally conductive contact, with thermal transfer member 80 when the retention stage lifting means is in retention stage processing position 106. Also, the shield retention stage of FIG 15A and FIG 15B has features that allow it to disengage from thermally conductive contact with thermal transfer member 80 when the retention stage lifting means 100 is in retention stage loading position 104.
  • shield retention means 42 when shield retention means 42 is in the shield retaining position, it urges thermally conductive contact between shield 60 and shield retention stage 40, thereby facilitating heat exchange between shield and shield retention stage.
  • retention stage lifting means When retention stage lifting means is in the retention stage loading position 104 there is no thermally conductive contact between shield retention stage 40 and thermal transfer member 80.
  • the shield retention stage when in retention stage loading position 104, the shield retention stage may be in thermally conductive contact with a portion of vacuum chamber 10. Thermally conductive contact may allow the shield retention stage to exchange heat with the contacting portion of the vacuum chamber and thereby the sample, shield, and shield retention stage may approach the same temperature as exists in the contacting portion of the vacuum chamber.
  • Second pumping manifold 92b and pumping means 90 may be used to evacuate loading chamber 16 in preparation for lowering the shield retention stage into the retention stage processing position.
  • the volume of loading chamber 16 is substantially smaller than the volume of vacuum chamber 10.
  • FIG 15B shows the apparatus of FIG 15A after the retention stage lifting means 100 and lift drive 102 have operated to move to the retention stage processing position 106.
  • thermal transfer member 80 is in thermally conductive contact with shield retention stage 40.
  • Heat sink means 84 may operate in this position to exchange heat through thermal transfer member 80, and thereby affect the temperature of shield retention stage 40.
  • the thermally conductive contact established between shield 60 and shield retention stage 40 when the shield is held in the shield retaining position completes the thermal circuit and allows for the exchange of heat between heat sink means 84 and shield 60.
  • heat sink means 84 may use gaseous or liquid nitrogen as a heat exchange medium.
  • FIG 15A and FIG 15B Use of the apparatus of FIG 15A and FIG 15B may proceed according to all of the steps disclosed for the use of the apparatus of FIG 1A, FIG 1B , FIG 1C, and FIG 2 .
  • the thermal transfer member and heat sink means shown in the embodiment of FIG 15A and FIG 15B give the user additional capabilities.
  • the thermal control works particularly well in concert with the retention stage lifting means, lift drive, and isolated loading chamber that is created when in the retention stage loading position. It may be the case that a sample is prepared in the ion beam while the sample is held at low temperature. Such a temperature may be below the dew point of the local atmosphere immediately outside of the apparatus.
  • the shield retention stage is at a temperature below the local dew point, then exposing it to the atmosphere during loading and unloading may result in water condensation in the loading chamber. Such water condensation would spoil the vacuum conditions maintained in the vacuum chamber if the wet retention stage were moved into the vacuum chamber. In addition, condensation, if allowed to form on the sample, may ruin the sample.
  • the sample After the sample has been processed in the ion beam, it may be moved by the retention stage lifting means and lift drive into the retention stage loading position. In this position the shield retention stage is in thermally conductive contact with a portion of the vacuum chamber. Since the thermal transfer member is no longer in contact with the shield retention stage, the temperature of the shield retention stage is free to rise to the temperature of that portion of the vacuum chamber.
  • the shield retention stage, shield, and sample will approach the temperature of the local atmosphere.
  • the thermally conductive contact between the vacuum chamber and the shield retention stage when in the retention stage loading position provides an efficient way to warm up a sample that has been previously cooled while in the retention stage processing position.
  • the loading chamber may be re-pressurized to ambient conditions, the chamber cover may be removed, and the shield and sample combination may be removed from the apparatus for microscopic observation elsewhere.
  • the present invention has been described in considerable detail with reference to certain preferred versions thereof, other versions are possible. For example, it may be desirable to combine features shown in various embodiments into a single embodiment. Also, it may be that certain preferred versions have alternatives that may be suitably substituted and achieve similar performance in various embodiments.
  • the chamber cover used to access the loading chamber of the apparatus may satisfy the needed functionality equally well whether it be tethered to the apparatus, attached to the apparatus via hinge, or capable of being entirely removed from the apparatus.

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Claims (19)

  1. Ionenstrahl-Probenvorbereitungsvorrichtung (2), die Folgendes umfasst:
    a) ein Ionenstrahl-Bestrahlungsmittel (20), das in einer Unterdruckkammer (10) angeordnet ist und einen Ionenstrahl in Richtung einer Abschirmungshaltestufe (40) lenkt;
    b) wobei die Abschirmungshaltestufe (40) in der Unterdruckkammer (10) angeordnet ist; wobei die Abschirmungshaltestufe (40) umfasst:
    i) ein erstes Bezugsmerkmal (70a);
    ii) ein zweites Bezugsmerkmal (70c);
    iii) ein Abschirmungshaltemittel (42), das mindestens eine Abschirmungsfreigabeposition (48) und eine Abschirmungshalteposition (46) aufweist;
    c) ein Haltestufen-Hebemittel (100), das mit der Abschirmungshaltestufe (40) gekoppelt ist und dazu ausgelegt ist, die Abschirmungshaltestufe (40) zwischen einer Haltestufen-Ladeposition (104) und einer Haltestufen-Verarbeitungsposition (106) zu bewegen, wobei dann, wenn das Haltestufen-Hebemittel (100) in der Haltestufen-Ladeposition (104) ist, eine im Wesentlichen unterdruckdichte Ladekammer (16) zwischen der Abschirmungshaltestufe (40) und einem Abschnitt der Unterdruckkammer (10) erzeugt wird und wobei dann, wenn das Haltestufen-Hebemittel (100) in der Haltestufen-Ladeposition (104) ist, eine im Wesentlichen unterdruckdichte Abdichtung zwischen der Ladekammer (16) und dem Abschnitt der Unterdruckkammer (10), in dem das Ionenstrahl-Bestrahlungsmittel (20) angeordnet ist, erzeugt wird;
    d) einen Hubantrieb (102), der mit dem Haltestufen-Hebemittel (100) gekoppelt ist und betätigbar ist, um das Haltestufen-Hebemittel (100) zwischen der Haltestufen-Ladeposition (104) und der Haltestufen-Verarbeitungsposition (106) zu bewegen;
    e) eine abnehmbare und austauschbare Kammerabdeckung (18), die so angeordnet ist, dass sie einen Zugang zu der Ladekammer (16) ermöglicht, wenn das Haltestufen-Hebemittel (100) in der Haltestufen-Ladeposition (104) gehalten wird, wobei die Kammerabdeckung (18) eine im Wesentlichen unterdruckdichte Abdichtung bereitstellt, wenn sie auf der Unterdruckkammer (10) angeordnet ist;
    f) eine Abschirmung (60), die mindestens einen starren ebenen Abschnitt aufweist, der abnehmbar und austauschbar in der Abschirmungshaltestufe (40) gehalten wird, wobei die Abschirmung (60) ferner umfasst:
    i) eine proximale Probenoberfläche (62), die dazu ausgelegt ist, die Probe (8) dauerhaft an der Abschirmung (60) zu befestigen;
    ii) eine erste Abschirmfläche (61a), die in dem Weg des Ionenstrahls angeordnet ist und so positioniert ist, dass sie einen Teil des Ionenstrahls, der auf die Probe (8) gerichtet ist, abschirmt, wenn die Abschirmung (60) in der Abschirmungshalteposition (46) des Abschirmungshaltemittels (42) gehalten wird und das Haltestufen-Hebemittel (100) in der Haltestufen-Verarbeitungsposition (106) gehalten wird;
    iii) ein drittes Bezugsmerkmal (70b), das mit der Abschirmung (60) einteilig ausgebildet ist, wobei das Abschirmungshaltemittel (42) in der Abschirmungshalteposition (46) das dritte Bezugsmerkmal (70b) drängt, damit es an dem ersten Bezugsmerkmal (70a) anliegt; und
    iv) ein viertes Bezugsmerkmal (70d), das mit der Abschirmung (60) einteilig ausgebildet ist, wobei das Abschirmungshaltemittel (42) in der Abschirmungshalteposition (46) das vierte Bezugsmerkmal (70d) drängt, an dem zweiten Bezugsmerkmal (70c) anzuliegen;
    g) ein Unterdruckpumpeneinrichtung (90), das betriebstechnisch mit einem ersten Pumpverteiler (92a) und einem zweiten Pumpverteiler (92b) verbunden ist, wobei der erste Pumpverteiler (92a) dazu ausgelegt ist, den Abschnitt der Unterdruckkammer (10) zu evakuieren, in dem das Ionenstrahl-Bestrahlungsmittel (20) angeordnet ist, und
    wobei der zweite Pumpverteiler (92b) dazu ausgelegt ist, den Abschnitt der Unterdruckkammer, der die Ladekammer (16) bildet, zu evakuieren, wenn sich das Haltestufen-Hebemittel (100) in der Haltestufen-Ladeposition (104) befindet.
  2. Ionenstrahl-Probenvorbereitungsvorrichtung nach Anspruch 1, die ferner Folgendes umfasst:
    h) ein Wärmeübertragungselement (80) in wärmeleitendem Kontakt mit der Abschirmungshaltestufe (40); und
    i) ein Wärmesenkenmittel (84), das dazu ausgelegt ist, Wärme von dem Wärmeübertragungselement (80) wegzuleiten.
  3. Ionenstrahl-Probenvorbereitungsvorrichtung nach Anspruch 1, die ferner Folgendes umfasst:
    h) ein Wärmeübertragungselement (80), das so angeordnet ist, dass es in wärmeleitendem Kontakt mit der Abschirmungshaltestufe (40) ist, wenn das Haltestufen-Hebemittel (100) in der Haltestufen-Verarbeitungsposition (106) gehalten wird, und ferner so angeordnet ist, dass das Wärmeübertragungselement (80) nicht in wärmeleitendem Kontakt mit der Abschirmungshaltestufe (40) ist, wenn das Haltestufen-Hebemittel (100) in der Haltestufen-Ladeposition (104) gehalten wird;
    i) ein Wärmesenkenmittel (84), das dazu ausgelegt ist, Wärme von dem Wärmeübertragungselement (80) wegzuleiten.
  4. Vorrichtung nach Anspruch 1, 2 oder 3, wobei die Abschirmungshaltestufe (40) ferner ein fünftes Bezugsmerkmal (70e) umfasst und die Abschirmung (60) ferner ein sechstes Bezugsmerkmal (70f) umfasst, das einteilig mit der Abschirmung (60) ausgebildet ist, wobei das Abschirmungshaltemittel (42) in der Abschirmungshalteposition (46) das sechste Bezugsmerkmal (70f) drängt, an dem fünften Bezugsmerkmal (70e) anzuliegen.
  5. Vorrichtung nach Anspruch 1, 2 oder 3, wobei die erste Abschirmfläche (61a) unter einem Winkel von weniger als etwa 90 Grad und mehr als etwa 80 Grad auf die proximale Probenoberfläche (62) trifft.
  6. Vorrichtung nach Anspruch 1, 2 oder 3, wobei die erste Abschirmfläche (61a) unter einem Winkel von weniger als etwa 87 Grad und mehr als etwa 83 Grad auf die proximale Probenoberfläche (62) trifft.
  7. Vorrichtung nach Anspruch 1, 2 oder 3, wobei die erste Abschirmfläche (61a) aus nicht magnetischem Material mit geringer Sputter-Ausbeute hergestellt ist.
  8. Vorrichtung nach Anspruch 1, 2 oder 3, wobei mindestens ein Abschnitt der ersten Abschirmfläche (61a) aus Tantal oder Titan hergestellt ist.
  9. Vorrichtung nach Anspruch 1, 2 oder 3, wobei das dritte Bezugsmerkmal (70b) eine Bezugsfläche (72) ist und mindestens ein Abschnitt der Bezugsfläche (72) mit mindestens einem Abschnitt der proximalen Probenoberfläche (62) flächengleich ist.
  10. Vorrichtung nach Anspruch 1, 2 oder 3, wobei die proximale Probenoberfläche (62) mindestens einen vertieften Abschnitt (64) aufweist, der für das Fließen von Haftmittel zwischen der Abschirmung (60) und der Probe (8) ausgelegt ist.
  11. Vorrichtung nach Anspruch 1, 2 oder 3, wobei die Abschirmung (60) ferner eine Probenklemmeinrichtung (68) umfasst, die mit der Abschirmung (60) gekoppelt ist und dazu ausgelegt ist, die Probe (8) gegen die proximale Probenoberfläche (62) zu halten.
  12. Vorrichtung nach Anspruch 1, wobei die Abschirmung ferner Folgendes umfasst:
    a) eine zweite Abschirmfläche (61b) mit einem Abschnitt, der in dem Weg eines Teils des Ionenstrahls angeordnet ist;
    b) einen Abschirmungsrand (63), der dort ausgebildet ist, wo die erste Abschirmfläche (61a) auf die proximale Probenoberfläche (62) trifft; und
    c) eine sichtbare Ausrichtungsmarkierung (65) auf der zweiten Abschirmfläche (61b), die so ausgelegt ist, dass die Position der sichtbaren Ausrichtungsmarkierung (65) in einer vorbestimmten Beziehung zu dem Bereich steht, in dem der Ionenstrahl auf den Abschirmungsrand (63) trifft, wenn die Abschirmung (60) in der Abschirmungshalteposition (46) des Abschirmungshaltemittels (42) gehalten wird.
  13. Vorrichtung nach Anspruch 1, 2 oder 3, wobei die Abschirmung (60) aus einem Mantelmaterial (67) hergestellt ist, das mit einem Kernmaterial (66) so zusammengefügt ist, dass ein Abschnitt des Mantelmaterials (67) zumindest einen Abschnitt der ersten Abschirmfläche (61a) bildet und ein Abschnitt des Kernmaterials (66) das dritte Bezugsmerkmal (70b) der Abschirmung (60) und das vierte Bezugsmerkmal (70d) der Abschirmung (60) bildet.
  14. Vorrichtung nach Anspruch 13, wobei das Mantelmaterial (67) aus nicht magnetischem Material mit geringer Sputter-Ausbeute hergestellt ist.
  15. Vorrichtung nach Anspruch 14, wobei mindestens ein Abschnitt des Mantelmaterials (67) Tantal oder Titan ist.
  16. Vorrichtung nach Anspruch 2 oder 3, wobei die Abschirmung (60) ferner Folgendes umfasst:
    a) eine zweite Abschirmfläche (61b) mit einem Abschnitt, der in dem Weg eines Teils des Ionenstrahls angeordnet ist; und
    b) eine sichtbare Ausrichtungsmarkierung (65) auf der zweiten Abschirmfläche (61b), die so ausgelegt ist, dass die Position der sichtbaren Ausrichtungsmarkierung (65) in einer vorbestimmten Beziehung zu dem Bereich steht, in dem der Ionenstrahl auf den Abschirmrand (63) trifft, wenn die Abschirmung (60) in der Abschirmungshalteposition (46) des Abschirmungshaltemittels (42) gehalten wird.
  17. Vorrichtung nach Anspruch 2 oder 3, wobei die Wärmesenkemittel (84) dazu ausgelegt ist, Stickstoff zu verwenden, um Wärme von dem Wärmeübertragungselement (80) wegzuleiten.
  18. Vorrichtung nach Anspruch 2 oder 3, wobei die Abschirmung (60) aus einem Material mit hoher Wärmeleitfähigkeit hergestellt ist.
  19. Vorrichtung nach Anspruch 13, wobei das Kernmaterial (66) Kupfer enthält.
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JP2007333682A (ja) 2006-06-19 2007-12-27 Jeol Ltd イオンビームを用いた断面試料作製装置
JP2008091221A (ja) * 2006-10-02 2008-04-17 Hitachi High-Tech Science Systems Corp イオンビーム加工装置及び方法
JP2009025243A (ja) * 2007-07-23 2009-02-05 Jeol Ltd 試料作製装置
JP5020794B2 (ja) * 2007-12-11 2012-09-05 日本電子株式会社 試料断面作製装置の試料遮蔽機構
JP5020836B2 (ja) 2008-01-23 2012-09-05 日本電子株式会社 試料断面作製装置の遮蔽材保持機構
US8445874B2 (en) * 2010-04-11 2013-05-21 Gatan Inc. Ion beam sample preparation apparatus and methods

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US20120085938A1 (en) 2012-04-12
US8729510B2 (en) 2014-05-20
JP5738980B2 (ja) 2015-06-24
US20130228708A1 (en) 2013-09-05
EP2558838A2 (de) 2013-02-20
HUE035965T2 (en) 2018-05-28
JP2013524244A (ja) 2013-06-17
US8445874B2 (en) 2013-05-21
WO2011130099A2 (en) 2011-10-20
EP2558838A4 (de) 2014-06-11
WO2011130099A3 (en) 2012-02-09

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