EP2502470B1 - Cavité hf et accélérateur pourvu d'une telle cavité - Google Patents

Cavité hf et accélérateur pourvu d'une telle cavité Download PDF

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Publication number
EP2502470B1
EP2502470B1 EP10784723.8A EP10784723A EP2502470B1 EP 2502470 B1 EP2502470 B1 EP 2502470B1 EP 10784723 A EP10784723 A EP 10784723A EP 2502470 B1 EP2502470 B1 EP 2502470B1
Authority
EP
European Patent Office
Prior art keywords
cavity
wall
conductive wall
conductive
currents
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP10784723.8A
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German (de)
English (en)
Other versions
EP2502470A1 (fr
Inventor
Arnd Baurichter
Oliver Heid
Timothy Hughes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
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Siemens AG
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Filing date
Publication date
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Publication of EP2502470A1 publication Critical patent/EP2502470A1/fr
Application granted granted Critical
Publication of EP2502470B1 publication Critical patent/EP2502470B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/14—Vacuum chambers
    • H05H7/18—Cavities; Resonators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/02—Circuits or systems for supplying or feeding radio-frequency energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/22—Details of linear accelerators, e.g. drift tubes

Definitions

  • the invention relates to an RF cavity in which RF power for generating an electromagnetic field in the interior of the RF cavity can be coupled. Furthermore, the invention relates to an accelerator with such an RF cavity. Such accelerators or RF cavities are usually used for accelerating charged particles.
  • RF cavities are known that can be excited to RF resonance by coupling RF power into the RF cavity.
  • the RF power in turn, is generated remotely from the RF cavity, for example, using a klystron, and transported to the RF cavity by means of a waveguide.
  • the US 5,497,050 discloses another structure for coupling RF power into an RF cavity. This is done via a plurality of solid-state power transistors, which are integrated in a conductive wall of the RF cavity.
  • the RF cavity comprises a chamber, a suffering wall surrounding the chamber, which has an inner side and an outer side, and a switching arrangement having a plurality of solid-state switches arranged along a circumference of the wall around the chamber, wherein the solid state switches are in communication with the conductive wall such that upon activation of the switching device, RF currents are induced in the conductive wall, thereby coupling RF power into the chamber of the RF cavity, along the outside of the conductive wall Scope of the RF cavity, a shielding device is provided which increases the impedance of a propagation path of RF currents along the outside of the wall, so that the RF currents coupled into the wall are suppressed on the outside of the wall.
  • the invention is based on the finding that an accelerator structure, as shown in the US 5,497,050 is advantageous to couple high RF power into an RF cavity.
  • the area over which the RF power can be injected is larger in comparison to structures with a coupling only in one place, since the transistors extend over the entire circumference.
  • the generation of the RF power to be injected takes place in the immediate vicinity of the RF cavity, whereby losses are avoided.
  • the RF currents that would otherwise propagate along a propagation path on the outer wall are significantly reduced and, at best, even completely suppressed.
  • the impedance increase on the outside of the conductive wall causes the RF currents, which are introduced via the direct connection of the solid-state switch with the conductive wall, to spread predominantly or entirely to the inside of the conductive wall.
  • the outside of the conductive wall can now be set at ground potential so that the RF cavity can be more easily connected or coupled with other devices and used together.
  • An outside of the conductive wall at ground potential increases safety during operation.
  • the conductive wall includes a first portion and a second portion isolated from the first portion.
  • the shielding device comprises a first part and a second part, wherein the first part is associated with the first portion of the conductive wall and the second part with the second part of the conductive wall.
  • the solid state transistor switching circuitry provides the RF power through a slot between the first portion and the second portion of the conductive wall. The insulation between the first portion and the second portion of the conductive wall can simultaneously perform the function of a vacuum seal.
  • the shielding device can realize the impedance increase in various ways.
  • the shielding device may comprise a ribbed conductive structure, a ferrite ring and / or ⁇ / 4 stub.
  • the conductive wall on the outside has a recess into which the shielding device is at least partially recessed.
  • a ⁇ / 4 stub can be formed by the recess in the conductive wall. In this way, no additional material is necessary to achieve the impedance increase. Filling the recess with a dielectric allows the stub to be matched to the frequency of the RF currents.
  • the stub can be arranged in a space-saving manner, when the stub is folded in, for example in the manner of a spiral.
  • the solid state switches may additionally be surrounded by a conductive protective cage which communicates with the outside of the conductive wall. This makes it possible to shield the solid-state switch from electromagnetic radiation.
  • the location where the guard cage communicates with the conductive wall may be selected such that the shielding device is between that location and the location where the RF currents are coupled from the solid state switches to the conductive wall. In this way, the part of the conductive wall, where RF currents can flow on the outside, is inside the protective cage.
  • the shielding device does not necessarily have to be arranged in a recess of the conductive wall. It can also be wholly or partially applied to the outside of the conductive wall.
  • the shielding device can also be formed by the conductive protective cage surrounding the solid state switches and which communicates with the conductive wall.
  • the protective cage communicates with both the first and second portions of the conductive wall. Without ribs for impedance increase on the inside of the protective cage, the protective cage would constitute a short circuit between the first section and the second section of the conductive wall without further measures, such as a further shielding device from the protective cage.
  • the ribs however, an impedance increase in the RF range is achieved, which prevents this.
  • a suppression of the RF currents on the outside of the wall is achieved by the conductive protective cage, since a preparation of the RF currents is prevented on the outside of the conductive wall through the contact points of the protective cage with the conductive wall.
  • the RF cavity can be an RF resonator, which can be used in particular to accelerate particles.
  • a plurality of such RF resonators can be connected in series and, in particular, controlled independently of one another.
  • HF cavities Because no HF currents flow on the outside of the HF cavity, several of these HF cavities can be connected one behind the other to form an accelerator unit.
  • the RF cavities are then decoupled from each other in the high frequency range despite coupling.
  • the coupling refers only to a direct current component (DC component). Due to the RF decoupling, it is then possible to control the individual RF cavities independently of each other, whereby the accelerator can be operated more flexibly and can be adapted more flexibly to the respective desired acceleration to be achieved.
  • the adaptation is more flexible than with an accelerator, in which the RF cavities are coupled together in the RF range, so that the control of one RF cavity simultaneously influences the RF fields in the adjacent RF cavity.
  • the structure according to the invention for coupling RF power and shielding with respect to the outside world can also be used with other RF cavities, for example, the RF cavity can be designed as a coaxial electrical line or arranged in a re-entrant resonator structure.
  • Fig. 1 shows a side view of an RF cavity 11.
  • a coupling device 13 arranged for coupling RF power, the RF cavity 11.
  • Fig. 2 shows a front view of in Fig. 1 shown RF cavity 11.
  • the coupling device 13 is based on the longitudinal section in Fig. 3 and the cross section in Fig. 4 through the in Fig. 1 and Fig. 2 shown RF cavity 11 shown in more detail.
  • Fig. 3 shows a longitudinal section through the RF cavity 11. Shown is only one wall side of the RF cavity 11 in the area in which the coupling device 13 is located. Shown is a conductive wall 15 having a first portion 21 and a second portion 23 which are isolated from each other. The annular insulation 27 simultaneously forms a vacuum seal.
  • the conductive wall 15 has an inner side 19, which is directed into the cavity of the RF cavity 11, and an outwardly directed outer side 17.
  • the coupling device 13 for RF power On the outside 17 is the coupling device 13 for RF power. This includes a plurality of solid-state transistors 29, which are in direct contact with a slot-like flange 25, which is formed by the first portion 21 and the second portion 23 of the conductive wall 15.
  • the solid-state transistors 29 are connected via leads 31 to a DC power source, not shown here.
  • the solid-state transistors 29 in the conductive wall 15 induce RF currents propagating along the conductive wall 15.
  • Wanted is a propagation along the inside 19 of the conductive wall.
  • a shielding device is provided, which is incorporated in the case shown here in a recess of the conductive wall 15.
  • the recesses are filled in the embodiment shown here with a ferrite ring 33.
  • the shielding device or the ferrite ring 33 is located both in the first portion 21 of the conductive wall 15 and in the second portion 23.
  • the ferrite ring 33 increases the impedance on the outer side 17 of the electrically conductive wall 15, whereby a spread of HF currents along the outside 17 is prevented and is directed to the inside 19.
  • the solid state transistors 29 and the coupling point on the flange 25 are protected by a metallic protective cage 35, for example made of copper, from external electromagnetic radiation.
  • the protective cage 35 contacts the electrically conductive wall 15 at a location on the outer side 17, which is already protected by the shielding device from propagating RF currents.
  • Fig. 4 shows a cross section along the line IV - IV in Fig. 3 , To see are the outer protective cage 35, some solid-state transistors 29 and the contact point with the flange 25 forming part of the conductive wall 15th
  • the shielding device is shown as a ferrite ring 33 that extends along the perimeter of the RF cavity.
  • the shielding device is shown as a ferrite ring 33 that extends along the perimeter of the RF cavity.
  • Other embodiments will be apparent from the following Fig. 5 to Fig. 9 shown.
  • Fig. 5 shows a longitudinal section of the conductive wall 15, at a location which in Fig. 3 corresponds to the point at which the ferrite ring 33 is located.
  • a recess 37 is incorporated, which is shaped so that it forms a ⁇ / 4 stub.
  • the ⁇ / 4 stub is tuned to the operating frequency of the RF cavity 11 such that propagation of RF currents along the outer side 17 of the wall 15 is prevented by the ⁇ / 4 stub.
  • the recess can according to Fig. 6 be filled with a dielectric 39, or according to Fig. 7 to be folded in itself (convolution 41). By both measures, the ⁇ / 4-stub can be accommodated space-saving.
  • Fig..8 shows a further embodiment of the shielding device.
  • the shielding device is realized in that the protective cage 35, the conductive Contacted wall 15 and the solid state transistors 29 surrounds, is formed in a special way.
  • the protective cage 35 has on its inside a plurality of ribs 43. On the basis of these ribs 43, the impedance of the path, which leads from the outside 17 of the conductive wall 15 along the inside of the protective cage 29, and thereby prevents HF currents along the outside 17 of the wall 15 from the injection site on the protective cage 29th would spread out.
  • Fig. 9 shows an RF cavity, which is designed as a coaxial conductive connection 47.
  • RF power can be fed into the coaxial connection via the coupling device 13 arranged on the outer conductor.
  • Fig. 10 shows an accelerator unit, along which a plurality of RF cavities 11 ... 11 ''', as for example in Fig. 1 in Fig. 2 are shown are arranged one behind the other. Since RF currents propagate only on the inside of the HF cavities 11... 11 ''', the HF cavities 11... 11''' are decoupled from one another in the high-frequency range and can therefore be controlled individually by a control device 45 , whereby a flexible tuning of the RF cavities 11... 11 '''to a desired acceleration can be achieved.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Claims (16)

  1. Cavité HF comprenant
    une chambre ( 11 )
    une paroi ( 15 ) conductrice qui entoure la chambre et qui a une face ( 19 ) intérieure et une face ( 17 ) extérieure, et un montage ayant une pluralité de commutateurs ( 29 ) à semiconducteur, qui sont disposés autour de la chambre le long d'un pourtour de la paroi ( 15 ),
    dans laquelle les commutateurs ( 29 ) à semiconducteur sont en liaison avec la paroi ( 15 ) conductrice de manière à, lors de l'activation du montage, induire des courants HF dans la paroi ( 15 ) conductrice en sorte que de la puissance HF est injectée dans la chambre de la cavité ( 11 ) HF,
    caractérisée en ce que
    sur la face ( 17 ) extérieure de la paroi ( 15 ) conductrice, il y a le long d'un pourtour de la cavité ( 11 ) HF un dispositif de blindage, qui augmente l'impédance d'un trajet de propagation de courant HF le long de la face ( 17 ) extérieure de la paroi ( 15 ) de manière à supprimer, sur la face ( 17 ) extérieure de la paroi ( 15 ), des courants HF injectés dans la paroi ( 15 ),
    dans laquelle au moins une partie du dispositif ( 33, 37, 39, 41 ) de blindage est noyée dans un évidemment de la face ( 17 ) extérieure de la paroi ( 15 ) conductrice.
  2. Cavité HF suivant la revendication 1, dans laquelle la paroi ( 15 ) conductrice comprend une première section ( 21 ) et une deuxième section ( 23 ) isolée de la première section ( 21 ) et dans laquelle, le dispositif ( 33, 37, 39, 41 ) de blindage comprend une première partie et une deuxième partie, la première partie étant disposée sur la première section ( 21 ) de la paroi ( 15 ) conductrice et la deuxième partie sur la deuxième section ( 23 ) de la paroi ( 15 ) conductrice.
  3. Cavité HF suivant la revendication 2, dans laquelle l'isolant ( 27 ) entre la première section ( 21 ) et la deuxième section ( 23 ) de la paroi ( 15 ) conductrice est une étanchéité au vide.
  4. Cavité HF suivant l'une des revendications 1 à 3, dans laquelle le dispositif de blindage comprend une structure ( 43 ) conductrice nervurée.
  5. Cavité HF suivant l'une des revendications 1 à 4, dans laquelle le dispositif de blindage comprend un noyau ( 23 ) de ferrite.
  6. Cavité HF suivant l'une des revendications 1 à 5, dans laquelle une ligne d'adaptation λ/4 ( 37, 39, 41 ) est formée dans la paroi ( 15 ) conductrice par l'évidemment.
  7. Cavité HF suivant la revendication 6, dans laquelle l'évidemment est rempli d'un diélectrique ( 39 ).
  8. Cavité HF suivant la revendication 6 ou 7, dans laquelle la ligne d'adaptation λ/4 est pliée.
  9. Cavité HF suivant l'une des revendications 1 à 8, dans laquelle les commutateurs ( 29 ) à semiconducteur sont entourés ( 35 ) d'une cage de protection, qui est en liaison en un point avec la face ( 17 ) extérieure de la paroi ( 15 ) conductrice de sorte que le dispositif ( 33, 37, 39, 41, 43 ) de protection se trouve entre le point et l'endroit où à lieu l'injection des courants HF par les commutateurs ( 29 ) à semiconducteur dans la paroi ( 15 ).
  10. Cavité HF suivant l'une des revendications 1 à 9, dans laquelle la cavité HF est constituée sous la forme d'une ligne ( 47 ) électrique coaxiale.
  11. Cavité HF suivant l'une des revendications 1 à 9, dans laquelle la cavité HF est constituée sous la forme d'un résonateur ( 11 ) HF, notamment pour l'accélération de particules.
  12. Accélérateur ayant plusieurs cavités ( 11 ... 11'" ) HF suivant la revendication 11, qui peuvent être commandées indépendamment les unes des autres.
  13. Cavité HF comprenant
    une chambre ( 11 )
    une paroi ( 15 ) conductrice qui entoure la chambre et qui a une face ( 19 ) intérieure et une face ( 17 ) extérieure, et un montage ayant une pluralité de commutateurs ( 29 ) à semiconducteur, qui sont disposés autour de la chambre le long d'un pourtour de la paroi ( 15 ),
    dans laquelle les commutateurs ( 29 ) à semiconducteur sont en liaison avec la paroi ( 15 ) conductrice de manière à, lors de l'activation du montage, induire des courants HF dans la paroi ( 15 ) conductrice en sorte que de la puissance HF est injectée dans la chambre de la cavité ( 11 ) HF,
    caractérisée en ce que
    sur la face ( 17 ) extérieure de la paroi ( 15 ) conductrice, il y a le long d'un pourtour de la cavité ( 11 ) HF un dispositif de blindage qui augmente l'impédance d'un trajet de propagation de courant HF le long de la face ( 17 ) extérieure de la paroi ( 15 ) de manière à supprimer, sur la face ( 17 ) extérieure de la paroi ( 15 ), des courants HF injectés dans la paroi ( 15 ),
    dans laquelle le dispositif de protection est formé d'une cage ( 35 ) de protection conductrice, qui entoure les commutateurs ( 29 ) à semiconducteur et dont la face ( 43 ) intérieure est nervurée.
  14. Cavité HF suivant la revendication 13, dans laquelle la cavité HF est constituée sous la forme d'une ligne ( 47 ) électrique coaxiale.
  15. Cavité HF suivant la revendication 13, dans laquelle la cavité HF est constituée sous la forme d'un résonateur ( 11 ) HF, notamment pour l'accélération de particules.
  16. Accélérateur ayant plusieurs cavités HF ( 11 ... 11"' ) suivant la revendication 13 qui peuvent être commandées indépendamment les unes des autres.
EP10784723.8A 2009-11-17 2010-10-18 Cavité hf et accélérateur pourvu d'une telle cavité Not-in-force EP2502470B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009053624A DE102009053624A1 (de) 2009-11-17 2009-11-17 HF-Kavität sowie Beschleuniger mit einer derartigen HF-Kavität
PCT/EP2010/065595 WO2011061026A1 (fr) 2009-11-17 2010-10-18 Cavité hf et accélérateur pourvu d'une telle cavité

Publications (2)

Publication Number Publication Date
EP2502470A1 EP2502470A1 (fr) 2012-09-26
EP2502470B1 true EP2502470B1 (fr) 2014-09-17

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EP10784723.8A Not-in-force EP2502470B1 (fr) 2009-11-17 2010-10-18 Cavité hf et accélérateur pourvu d'une telle cavité

Country Status (7)

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US (1) US8779697B2 (fr)
EP (1) EP2502470B1 (fr)
JP (1) JP5567143B2 (fr)
CN (1) CN102612865B (fr)
DE (1) DE102009053624A1 (fr)
RU (1) RU2559031C2 (fr)
WO (1) WO2011061026A1 (fr)

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Publication number Publication date
US8779697B2 (en) 2014-07-15
RU2012103491A (ru) 2013-12-27
RU2559031C2 (ru) 2015-08-10
CN102612865A (zh) 2012-07-25
US20120229054A1 (en) 2012-09-13
WO2011061026A1 (fr) 2011-05-26
EP2502470A1 (fr) 2012-09-26
JP2013511133A (ja) 2013-03-28
DE102009053624A1 (de) 2011-05-19
CN102612865B (zh) 2015-06-24
JP5567143B2 (ja) 2014-08-06

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