Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

• the invention further relates to a method for thermally treating a substrate within a process chamber of a reactor forming a first and a second wall, in particular for depositing a layer in a CVD reactor, wherein the substrate rests on a susceptor forming the first wall of the process chamber, wherein at least one wall is heated by a heater spaced from the wall to a process temperature and wherein the at least one heated wall associated therewith a spaced cooling device which is arranged so that from the heater via the distance space between the heater and heated process chamber wall heat to the process chamber wall and heat is transferred to the cooling device from the heated process chamber wall via the clearance space between the heated process chamber wall and the cooling device.
• a generic reactor is described by DE 100 43 601 AI.
• the reactor described there has an outer wall, with which the interior of the reactor housing is sealed gas-tight from the outside world.
• a process chamber bounded downwardly by a susceptor and upwardly by a process chamber ceiling.
• Susceptor and process chamber ceiling are made of graphite and will heated via a high-frequency alternating field.
• the relevant RF heaters are located below the susceptor or above the process chamber ceiling and each have the shape of a helical coil.
• the bobbin consists of a hollow body. The hollow body is formed into a spiral. Through the hollow body, a cooling medium flows, so that the heater is simultaneously a cooling device.
• the alternating fields generated by the RF coils generate eddy currents in the susceptor or in the process chamber ceiling, so that the susceptor or the process chamber ceiling heat up.
• the 10 2005 055 252 AI also describes a genus in modern device, in which below a arranged in a process chamber susceptor, which consists of graphite, and which is also heated by a flow-through with coolant RF coil, provided a support plate made of quartz. On this quartz plate, the susceptor driven in rotation about a central axis slides on a gas cushion. Via channels running in the parting line between the susceptor underside and the quartz plate top side, a drive mechanism is supplied with drive gas to spin-drive substrate holders in the top of the susceptor. Again, the flowed through by a coolant RF coil is spaced from a distance space from the susceptor.
• No. 5,516,283 A describes a treatment device for a multiplicity of disk-shaped substrates, heat transfer bodies being provided between the substrates, which are stacked at a distance from one another.
• DE 198 80 398 B4 shows a temperature measuring device for a substrate, wherein the temperature on the underside of the substrate is measured by a temperature sensor which is inserted in a wrapping part.
• US Pat. No. 6,228,173 B1 describes a heat treatment device for heat treatment of a semiconductor substrate. Below a worktop is an annular heat compensation part for reflecting heat radiation.
• US 2005/0178335 AI relates to a temperature control, for which purpose a heat-conducting gas is introduced into a gap between a heated susceptor and a cooler.
• control bodies may be introduced into the space between the heated wall and the cooling or heating device can be brought.
• the control bodies may be displaced during the treatment process or between two consecutive treatment processes, thereby causing a local temperature change on the surface of the susceptor.
• the invention is based on the finding that, in a CVD reactor, as described, for example, in DE 10 2005 055 252 A1, about 10 to 30% of the power transmitted by the RF heater to the susceptor or to a heated process chamber ceiling as heat conduction or heat radiation in the cooling device, so flow back through the flow of a coolant heating coil. With the rule bodies is to be intervened in this heat recovery path.
• the processes taking place in the process chamber arranged in the reactor housing are carried out at total pressures which are greater than 1 millibar. Accordingly, there is a gas in the space between the susceptor and heating / cooling device with a total pressure of at least 1 millibar. As a rule, this is an inert gas, for example a noble gas, hydrogen or nitrogen. At process temperatures below 1000 ° C., an appreciable power is transferred via this gas from the side of the heated wall facing away from the process chamber, for example from the susceptor to the coolant-flowed spiral windings, via heat conduction. At higher temperatures, a significant amount of heat radiation is transmitted to these heatsinks.
• an inert gas for example a noble gas, hydrogen or nitrogen.
• control body consists of an electrically insulating material, then the energy supply, which takes place via the RF coupling into the susceptor or into the process chamber ceiling, is not affected.
• control body has a reflecting surface at least on its side facing the susceptor or the process chamber ceiling. The surface is reflective for the heat radiation emitted by the susceptor or the ceiling of the process chamber, so that the heat return from the susceptor or at the process chamber ceiling surface to the RF spiral is reduced.
• the control body preferably has a very low thermal conductivity. It is then lower than that of the gas. As a result, a local temperature increase at the susceptor surface is possible.
• a ring-shaped regulating body which consists for example of a plurality of segments. If this is removed, this leads locally to an increase in the surface temperature on the susceptor or the process chamber ceiling. As a result, for example, the edges of a substrate resting on the susceptor can be heated to a greater extent than the central region of the susceptor. This counteracts a "boiler" of the substrate, ie a bending up of the edges.
• FIG. 5 shows a second embodiment of the invention with a trained by a shower head process chamber ceiling
• Fig. 6 shows a third embodiment of the invention, in which the susceptor 2 opposite the process chamber ceiling 3 is heated.
• the control body 6 consists of quartz, sapphire, glass or a similar electrically non-conductive material. On its cross-section of the control body 6 thus forms a beideleittier, which has a higher thermal conductivity than the same route without control body.
• the displacement of the control body 6 from the non-action position shown in phantom in FIG. 1 into the active position shown in solid lines thus results in an increased return of heat from the susceptor 2 to the heating coil 4 within the zone of the susceptor 2 covered by the control body 6. This results in a local cooling of the surface of the susceptor 2.
• the control bodies 6 that form a ring in accordance with FIG. 2 lie in a radially outer zone below the susceptor 2 and below an edge of the substrate holder 7.
• the control bodies 6 can be moved back and forth between the two positions shown in FIGS. 2 and 3 during a coating process with mechanical drives (not shown) that can be operated by a motor.
• the same reference numerals designate the same elements of a process chamber.
• the process chamber ceiling 3 is not made of a one-piece or multi-part solid graphite plate.
• the process chamber cover 3 has a multiplicity of sieve-like arranged outlet openings 16.
• the process chamber ceiling 3 is formed here by a "shower head" 15. Through the outlet openings 16, the process gas is introduced into the process chamber.
• a variable position control body 6 with a high thermal conductivity, but which is electrically insulating.
• the process chamber ceiling 3 is made of graphite or other electrically conductive material.
• an RF heater 17 which is formed by a bent pipe to a spiral.
• the tube forms a cooling channel 18, through which a cooling medium flows.
• a control body 19 made of quartz, glass, sapphire or other suitable material having a high specific thermal conductivity, but which is electrically insulating. It can also be provided here a plurality of control bodies 19, which complement each other in the operative position shown in Figure 6 to a closed circle.

Applications Claiming Priority (2)

Publications (1)

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Family Cites Families (14)

• 2009
  • 2009-09-08 DE DE102009043960A patent/DE102009043960A1/de not_active Withdrawn
• 2010
  • 2010-08-16 TW TW099127289A patent/TW201118197A/zh unknown
  • 2010-08-30 CN CN201080039892.6A patent/CN102612571A/zh active Pending
  • 2010-08-30 WO PCT/EP2010/062631 patent/WO2011029739A1/de active Application Filing
  • 2010-08-30 US US13/394,040 patent/US20120156396A1/en not_active Abandoned
  • 2010-08-30 JP JP2012528310A patent/JP2013503976A/ja not_active Withdrawn
  • 2010-08-30 EP EP10751613A patent/EP2475804A1/de not_active Withdrawn
  • 2010-08-30 KR KR1020127008983A patent/KR20120073273A/ko not_active Application Discontinuation

Non-Patent Citations (1)

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