EP2468693A3 - Thermoelectric Conversion Material - Google Patents

Thermoelectric Conversion Material Download PDF

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Publication number
EP2468693A3
EP2468693A3 EP11194975A EP11194975A EP2468693A3 EP 2468693 A3 EP2468693 A3 EP 2468693A3 EP 11194975 A EP11194975 A EP 11194975A EP 11194975 A EP11194975 A EP 11194975A EP 2468693 A3 EP2468693 A3 EP 2468693A3
Authority
EP
European Patent Office
Prior art keywords
glass
thermoelectric conversion
conversion material
selectively precipitated
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11194975A
Other languages
German (de)
French (fr)
Other versions
EP2468693A2 (en
Inventor
Tadashi Fujieda
Takashi Naito
Takuya Aoyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of EP2468693A2 publication Critical patent/EP2468693A2/en
Publication of EP2468693A3 publication Critical patent/EP2468693A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
    • C03B32/02—Thermal crystallisation, e.g. for crystallising glass bodies into glass-ceramic articles
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C03C3/21—Silica-free oxide glass compositions containing phosphorus containing titanium, zirconium, vanadium, tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/14—Compositions for glass with special properties for electro-conductive glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93—Thermoelectric, e.g. peltier effect cooling

Abstract

A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An MxV2O5 crystal is selectively precipitated in vanadium-based glass, wherein M is one metal element selected from the group consisting of iron, arsenic, antimony, bismuth, tungsten, molybdenum, manganese, nickel, copper, silver, an alkali metal and an alkaline earth metal, and 0<x<1.
The glass may comprise in mol% 10 Cu2O, 70 V2O5, 10 Fe2O3, 10 P2O5. The glass is converted to a glass-ceramic using microwave heating.
EP11194975A 2010-12-24 2011-12-21 Thermoelectric Conversion Material Withdrawn EP2468693A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010286922A JP5537402B2 (en) 2010-12-24 2010-12-24 Thermoelectric conversion material

Publications (2)

Publication Number Publication Date
EP2468693A2 EP2468693A2 (en) 2012-06-27
EP2468693A3 true EP2468693A3 (en) 2012-08-22

Family

ID=45445828

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11194975A Withdrawn EP2468693A3 (en) 2010-12-24 2011-12-21 Thermoelectric Conversion Material

Country Status (6)

Country Link
US (1) US8802963B2 (en)
EP (1) EP2468693A3 (en)
JP (1) JP5537402B2 (en)
KR (1) KR101357401B1 (en)
CN (1) CN102557448B (en)
TW (1) TWI477473B (en)

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JP5651184B2 (en) * 2010-09-24 2015-01-07 株式会社日立製作所 Manufacturing method of semiconductor junction element
JP5822766B2 (en) 2012-03-21 2015-11-24 株式会社日立製作所 Metal matrix composite and manufacturing method thereof
CN102775069B (en) * 2012-07-20 2015-02-18 同济大学 Preparation method of barium strontium titanate based glass ceramic energy storage material
US20150221845A1 (en) * 2012-08-31 2015-08-06 Chisaki Takubo Thermoelectric conversion device
WO2014073095A1 (en) * 2012-11-09 2014-05-15 株式会社日立製作所 Thermoelectric conversion module and method for manufacturing same
WO2014147966A1 (en) * 2013-03-18 2014-09-25 パナソニック株式会社 Terahertz electromagnetic wave generation device, terahertz spectroscopic device, and method for generating terahertz electromagnetic wave
WO2014155643A1 (en) * 2013-03-29 2014-10-02 株式会社日立製作所 Thermoelectric conversion device
US9540279B2 (en) * 2013-05-24 2017-01-10 Corning Incorporated Method of producing glass-ceramic
DE102013215662B3 (en) * 2013-08-08 2014-12-31 Schott Ag Glass-ceramic, thermoelectric component comprising the glass-ceramic and use of the glass-ceramic
KR101624310B1 (en) * 2013-10-17 2016-05-25 주식회사 엘지화학 Thermoelectric materials and their manufacturing method
JP6791544B2 (en) * 2015-06-24 2020-11-25 リンテック株式会社 Thermoelectric semiconductor composition, thermoelectric conversion material and its manufacturing method
WO2017095972A1 (en) * 2015-11-30 2017-06-08 The Board Of Regents For Oklahoma State University Microwave processing of thermoelectric materials and use of glass inclusions for improving the mechanical and thermoelectric properties
JP6809852B2 (en) * 2016-09-13 2021-01-06 古河電気工業株式会社 Thermoelectric conversion element and thermoelectric conversion module
JP2018157018A (en) * 2017-03-16 2018-10-04 国立大学法人 筑波大学 Thermoelectric conversion material
CN108793769A (en) * 2018-09-05 2018-11-13 中建材蚌埠玻璃工业设计研究院有限公司 A kind of thermoelectricity glass
CN110459670B (en) * 2019-08-06 2021-08-10 武汉理工大学 Method for preparing magnetic nano composite thermoelectric material based on amorphous material in situ

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KR100198244B1 (en) * 1991-05-30 1999-06-15 윤종용 A semiconductor glass composition
JP2009193888A (en) * 2008-02-15 2009-08-27 Ohara Inc Methods of manufacturing solid electrolyte and lithium battery
WO2011096012A1 (en) * 2010-02-03 2011-08-11 株式会社日立製作所 Infrared ray sensor
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JP2011241133A (en) * 2010-05-21 2011-12-01 Hitachi Ltd Crystallized glass and method for producing the same
WO2012039265A1 (en) * 2010-09-24 2012-03-29 株式会社日立製作所 Semiconductor junction element, semiconductor device using same, and method for manufacturing semiconductor junction element

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JP2009193888A (en) * 2008-02-15 2009-08-27 Ohara Inc Methods of manufacturing solid electrolyte and lithium battery
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WO2011125834A1 (en) * 2010-03-31 2011-10-13 日立化成工業株式会社 Positive electrode active material
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Also Published As

Publication number Publication date
JP5537402B2 (en) 2014-07-02
CN102557448A (en) 2012-07-11
KR101357401B1 (en) 2014-02-03
TW201245085A (en) 2012-11-16
US20120161273A1 (en) 2012-06-28
CN102557448B (en) 2015-08-05
KR20120073115A (en) 2012-07-04
US8802963B2 (en) 2014-08-12
EP2468693A2 (en) 2012-06-27
TWI477473B (en) 2015-03-21
JP2012134409A (en) 2012-07-12

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