EP2462786A1 - Guide d'ondes, en particulier pour un accélérateur à parois diélectriques - Google Patents

Guide d'ondes, en particulier pour un accélérateur à parois diélectriques

Info

Publication number
EP2462786A1
EP2462786A1 EP10732972A EP10732972A EP2462786A1 EP 2462786 A1 EP2462786 A1 EP 2462786A1 EP 10732972 A EP10732972 A EP 10732972A EP 10732972 A EP10732972 A EP 10732972A EP 2462786 A1 EP2462786 A1 EP 2462786A1
Authority
EP
European Patent Office
Prior art keywords
layer
conductor structure
electronic components
dielectric
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10732972A
Other languages
German (de)
English (en)
Inventor
Norbert Seliger
Karl Weidner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP2462786A1 publication Critical patent/EP2462786A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/22—Details of linear accelerators, e.g. drift tubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H9/00—Linear accelerators

Definitions

  • Waveguide in particular in the case of the dielectric wall accelerator
  • the present invention relates to waveguides, in particular waveguides in a dielectric wall accelerator, and a method for their preparation.
  • Novel waveguides, particularly in a dielectric wall accelerator are no longer planar, but have complex shaped out-of-plane shaped surfaces.
  • new production methods and materials are required.
  • electronic assemblies for example half-bridge circuits or multichip circuits, are to be integrated into the waveguide structures which are waveguides.
  • US 5,821,705 discloses the construction of a conventional dielectric wall accelerator having a high-rise, high-rise time switch, the switch having a pair of electrodes between the alternating ones
  • waveguide structures in particular in complex, formed out of a plane metallic waveguide structures, with dielectric layers to improve insulation stability or stabilize and exclude insulation-reducing effects. It should provide electrical isolation up to 100kV / mm at low dielectric constants. It is to be integrated into the waveguide structures a variety of electronic components. In particular, a multiplicity of electronic components are intended for driving an accelerator cell of a dielectric wall accelerator into the accelerator cell to get integrated. It is intended to provide a compact, cost-effective construction and connection technology for electronic components. It is intended to provide minimal parasitic effects and efficient high frequency connection of a plurality of electronic components to the waveguide structures.
  • a method of fabricating a waveguide comprising a dielectric or vacuum between first and second conductive patterns having a plurality of electronic components in which a plurality of upper and lower pads to be contacted are present.
  • the method comprises the steps of: mounting the electronic components on a substrate, contacting lower contact surfaces on underlying electrical conductors on the substrate, and generating electrical vias extending from the conductors through the substrate; Laminating a film of electrically insulating plastic material on surfaces of the substrate and the devices disposed thereon under vacuum so that the film covers and closely fits the surfaces including each electronic device and each upper contact surface
  • a device having a waveguide comprising a dielectric or a vacuum between a first and a second conductor structure, having a plurality of electronic components, in which a plurality of upper and lower contact surfaces to be contacted are provided, wherein the electronic components fixed to a substrate and electrically contacting lower pads on underlying electrical conductors on the substrate and generating electrical vias from the conductors through the substrate; a film of electrically insulating plastic material is laminated to surfaces of the substrate and the devices disposed thereon under vacuum so that the film closely covers the surfaces including each electronic device and each upper contact surface and adheres to these surfaces including each electronic device ; each upper to be contacted
  • each exposed upper contact surface was in each case contacted flat with a first layer of electrically conductive material; the substrate containing the electronic components is fastened on the first conductor structure and upper contact surfaces are formed by means of the first layer of electrically conductive material and the plated-through holes and tere contact surfaces were electrically contacted by means of the plated-through holes to the first conductor structure;
  • a second layer of electrically insulating plastic material has been applied to surfaces of the foil, the first layer of electrically conductive material and the first conductor structure; the second conductor structure has been fixed on the second layer, wherein the second layer completely forms the dielectric between the first and second conductor structure or, if a vacuum is generated between the first and second conductor structure, the second layer only in the area of the electronic components between the first and second conductor structure is formed and wherein the second layer has openings, are electrically contacted by the upper and lower contact surfaces by means of further plated-through holes to the second conductor structure.
  • a method for producing a plurality of assemblies which includes the following essential
  • Steps include: Vacuum laminating, Molding, Inkjet processes for bonding the dielectric layer to the waveguide structures, and integrating the electronic devices, which may be power modules in planar contact.
  • a highly insulating covering of initially open end faces of waveguide structures is provided.
  • a compact, flat, lightweight design is possible, with short, exact lengths of cable and line widths.
  • Waveguide provided. This leads to minimal parasitic effects and to an effective high-frequency connection.
  • the waveguide part of an accelerator cell of a dielectric Wall accelerator and the conductor structures may have molded out of a plane surfaces. Between an upper and a middle conductor structure and between this and a lower conductor structure, the dielectric or the vacuum can be arranged in each case.
  • a waveguide made according to a method of the main claim may thus be integrated into an accelerator cell of a dielectric wall accelerator. It is thus a stack of waveguides to produce. It can result in a multi-layered construction, whereby different dielectrics or vacuum layers can be used.
  • the lower and the upper conductor structure may be grounded.
  • the second layer of electrically insulating plastic material may be a polymer film.
  • the dielectric is particularly advantageous if it has been provided as a high-frequency-capable, highly insulating, high-temperature-suitable polymer film.
  • the second layer of electrically insulating plastic material may be produced in the region next to the electronic components of a plurality of layers of electrically insulating base material.
  • a suitable thickness can be generated by layered construction of the second layer. This can be done by using multiple layers. In this way, insulation-reducing effects are excluded, for example by defects in the dielectric.
  • a multilayer dielectric layer structure provides redundancy in terms of insulation resistance.
  • the second layer of electrically insulating plastic material can be produced bent out of a plane by means of a vacuum laminator.
  • a vacuum lamination process in an autoclave with suitable dielectric layers allows a geometrically complex three-dimensional shaping of waveguide structures. Air inclusions to improve and stabilize the insulation strength are avoided with particular advantage.
  • a Vakuumlaminierhabilit is suitable for a complex shaping and thus for larger moldings.
  • At least one electrical external contact connection can be generated by the openings through the second layer of electrically insulating material and / or through a conductor structure, starting from the electronic components.
  • electronic components may have connecting elements to the waveguide structures.
  • the waveguide structures can be connected by a direct external connection very low inductively with the electronic components.
  • an external contact connection can be a contacting to a conductor structure.
  • an external contact connection can be generated by means of a spring contact.
  • an external contact connection can be generated by means of laser-welded contacts.
  • the waveguide structures can by a direct external connection, in particular by laser welded
  • Contacts very low inductively connected to the electronic components. This can be done for example by means of a copper leadframe. External contacts, for example by means of laser-welded copper leadframes, can be provided directly on the waveguides.
  • the electronic components having the substrate with the Components facing away from side be fixed by means of an adhesive film on the first conductor structure.
  • the electronic components may be a power module.
  • electronic assemblies such as half-bridge circuits or multi-chip circuits can be integrated into the waveguide.
  • a material of the dielectric or the second layer of electrically insulating material may be mechanically elastic. A flexible material can absorb mechanical stresses, which can be caused for example by thermal expansion of the waveguide, inductive deformation or electrostatic deformation.
  • the waveguide can be coated with a functional metallization, namely to improve electrical properties.
  • a functional metallization namely to improve electrical properties.
  • This can also be combined with a multilayer construction.
  • Particularly advantageous may be a material of the conductor structures steel with a copper metallization.
  • Fig. 2 shows a single accelerator cell of a conventional dielectric wall accelerator
  • FIG. 3 shows a left half of a conventional accelerator cell in a cross section with conventional An
  • FIG. 5 shows a second embodiment of a device according to the present invention
  • Fig. 6 shows a third embodiment of a device according to the present invention
  • Fig. 7 shows another conventional embodiment of
  • Fig. 8 shows an embodiment of an inventive
  • FIG 1 shows a multi-stage system 40 of a linear accelerator of a conventional dielectric wall accelerator for use in a vacuum chamber.
  • Five accelerator cells 10 are shown, all of which share a common stack having a dielectric sleeve 28.
  • Each accelerator cell 10 has conductor patterns 14, 16 and 18.
  • a laminated dielectric 20 separates the conductor patterns 14 and 16.
  • a laminated dielectric 22 separates the conductor patterns 14 and 18.
  • a switch 12 is connected to allow the middle conductor pattern 14 to be charged by a high voltage source.
  • a particle beam e ⁇ is accelerated in an axial channel.
  • Figure 2 shows a single conventional accelerator cell 10 having a pair of upper and lower conductive patterns 16 and 18 and a middle conductive pattern 14.
  • a laminated dielectric 20 is formed between the conductive patterns 14 and 16. Furthermore, a laminated dielectric 22 is created between the conductor patterns 14 and 18.
  • Reference numeral 28 denotes a dielectric sleeve. Within this dielectric sleeve 28, a channel is provided, in which a Particle beam e is accelerated.
  • the individual accelerator cell 10 is controlled by means of a switch 12.
  • FIG. 3 shows a left half of a conventional accelerator cell 10 in a cross section.
  • the elements correspond to the elements of the preceding figures.
  • FIG. 3 shows conventional connections of a switch 12 to the conductor structures 14, 16 and 18. In this case, a welded connection 30, a screw connection 32 and a solder connection 34 are shown. In this way, a switch 12 is electrically contacted with the conductor patterns 14, 16 and 18.
  • Figure 4 shows an apparatus according to the present invention.
  • An arrangement according to FIG. 4 may be an accelerator cell 10 of a dielectric wall accelerator.
  • the device according to FIG. 4 shows a dielectric 20 between a first and a second conductor structure 14 and 16.
  • Dielectric 20 and the conductor structures 14 and 16 generate a waveguide.
  • a vacuum may be generated.
  • a plurality of electronic components 50 is integrated according to FIG.
  • On the electronic components 50 a plurality of upper and lower contact surfaces 52 to be contacted are present.
  • the electronic components 50 may be mounted on a substrate 54.
  • a film 56 of electrically insulating plastic material is vacuum-laminated to surfaces of the substrate 54 and the devices 50 disposed thereon so that the film 56 closely covers the surfaces including each electronic device 50 and each top contact surface 52 and on these surfaces including each electronic device 50 sticks.
  • Each upper contact surface 52 to be contacted on the surfaces of the electronic components 50 has been exposed by opening respective windows in the film 56.
  • Each exposed upper contact surface 52 was each contacted flat with a first layer 58 of electrically conductive material.
  • the substrate 54 with the electronic components 50 mounted thereon has been mounted on the components side facing away fixed on the first conductor structure 14.
  • the electronic components 50 fastened on the substrate 54 have been integrated into the waveguide at the end of the waveguide in such a way that an acceleration channel can be arranged in the opposite direction. That is, the electronic components 50 have been integrated into the waveguide at the radially outer end of the waveguide of the accelerator cell 10. In this way, a highly insulating cover of open end faces of waveguide structures.
  • the waveguide described above can be part of an accelerator cell 10 of a dielectric wall accelerator, in which the conductor structures 14, 16, 18 have surfaces bent out of a plane. Between an upper and a middle conductor structure 14 and 16 and between this and a lower conductor structure 14 and 18, the respective dielectric 20 and 22 or a vacuum is arranged.
  • a dielectric wall accelerator For the operation of a dielectric wall accelerator, reference is made to US Pat. No. 5,821,705, the content of which completely belongs to the disclosure of the present application.
  • FIG. 5 shows a further exemplary embodiment of a waveguide and an accelerator cell 10 of a dielectric wall accelerator.
  • the electronic components on the left side of the accelerator cell 10 have the same features as in FIG. The only difference is that the electronic components 50 have been integrated in a lower waveguide.
  • the electronic components 50 have been integrated in a lower waveguide.
  • FIG. 4 shows in FIG. 5, starting from the electronic components 50, electrical external contact connections 62 that are generated by the electronic components 50 through the second Layer 60 of electrically insulated plastic material and through the conductor pattern 18 extend therethrough.
  • the electrical external contact connections are identified by the reference numeral 62.
  • an external contact connection 62 to the conductor structure 14 is produced by means of a spring contact 64.
  • FIG. 6 another embodiment of a device according to the invention is shown.
  • the second layer 60 of electrically insulating plastic material is produced in regions adjacent to the electronic components 50 from a plurality of layers 60a, 60b, 60c of electrically insulating plastic material.
  • a gap between the first conductor structure 14 and the second conductor structure 16 is advantageously filled.
  • the space adjacent to the devices 50 is filled by additional layers 60b and 60c.
  • To fill a gap between devices 50 and second conductor structure 16 only layer 60a is required. The distance between the conductor patterns 14 and 14 is thus provided uniformly.
  • FIG. 7 illustrates a compact way of replacing the fixed disks of the conductor patterns 14, 16 and 18, providing one or more spiral conductors connected between conductor rings on the inner and outer diameters.
  • Reference numeral 16 denotes an upper conductor pattern 16 and reference numeral 20 denotes a dielectric.
  • Reference numeral 28 denotes a dielectric sleeve.
  • FIG. 7 shows a plan view of an accelerator cell 10.
  • Step S1 Attaching the electronic components 50 to a substrate 54, contacting lower pads 52 on underlying electrical conductors on the substrate 54, and creating electrical vias extending from the conductors through the substrate 54.
  • Step S2 laminating a foil 56 of electrically insulating plastic material on surfaces of the substrate 54 and the devices 50 thereon under vacuum such that the foil 56 closely covers and covers the surfaces including each electronic component 50 and each top contact surface 52 each electronic component 50 adheres.
  • Step S3 Expose each upper contact surface 52 to be contacted on the surfaces of the electronic components 50 by opening respective windows in the film 56.
  • Step S4 Contact each exposed upper contact surface 52 flat with a first layer 58 of electrically conductive material.
  • Step S5 Attaching the electronic components 50 having the substrate 54 on the first conductor pattern 14 and electrically contacting upper pads 52 by means of the first layer 58 of electrically conductive material and the vias and lower pads 52 by means of the vias to the first conductor pattern 14.
  • Step S6 Applying a second layer 60 of electrically insulating plastic material on surfaces of the film 56, on the first layer 58 of electrically conductive material and on the first conductor structure 14, wherein 60 openings are produced in the second layer.
  • Step S7 Attaching the second conductor pattern 16 on the second layer 60, the second layer 60 forming the dielectric 20 completely between the first and second conductor structures 14, 16 or, if a vacuum is generated between the first and second conductor structures 14, 16, the second Layer 60 as optional dielectric only in
  • each contact surface 52 can be assigned its own through-connection, if required.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Waveguides (AREA)

Abstract

La présente invention concerne des guides d'onde, en particulier des guides d'onde pour un accélérateur à parois diélectriques et un procédé pour sa fabrication. Selon la présente invention, des composants électroniques (50) mis en contact de manière planaire sont intégrés dans un guide d'ondes, en particulier un guide d'ondes d'une cellule accélératrice (10) d'un accélérateur à parois diélectriques.
EP10732972A 2009-08-06 2010-07-15 Guide d'ondes, en particulier pour un accélérateur à parois diélectriques Withdrawn EP2462786A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009036418A DE102009036418B4 (de) 2009-08-06 2009-08-06 Wellenleiter, insbesondere beim Dielektrikum-Wand-Beschleuniger
PCT/EP2010/060226 WO2011015438A1 (fr) 2009-08-06 2010-07-15 Guide d'ondes, en particulier pour un accélérateur à parois diélectriques

Publications (1)

Publication Number Publication Date
EP2462786A1 true EP2462786A1 (fr) 2012-06-13

Family

ID=43086844

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10732972A Withdrawn EP2462786A1 (fr) 2009-08-06 2010-07-15 Guide d'ondes, en particulier pour un accélérateur à parois diélectriques

Country Status (5)

Country Link
US (1) US20120133306A1 (fr)
EP (1) EP2462786A1 (fr)
JP (1) JP2013501328A (fr)
DE (1) DE102009036418B4 (fr)
WO (1) WO2011015438A1 (fr)

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DE102011075219A1 (de) 2011-05-04 2012-11-08 Siemens Ag HF-Generator
DE102011082580A1 (de) 2011-09-13 2013-03-14 Siemens Aktiengesellschaft HF-Resonator und Teilchenbeschleuniger mit HF-Resonator
DE102011083668A1 (de) 2011-09-29 2013-04-04 Siemens Aktiengesellschaft HF-Resonator und Teilchenbeschleuniger mit HF-Resonator
US8519644B1 (en) 2012-08-15 2013-08-27 Transmute, Inc. Accelerator having acceleration channels formed between covalently bonded chips
DE102014217932A1 (de) * 2014-09-08 2016-03-10 Siemens Aktiengesellschaft Anordnung und Verfahren zur galvanisch getrennten Energieübertragung
TWI587641B (zh) * 2015-11-17 2017-06-11 財團法人金屬工業研究發展中心 射頻訊號傳輸結構

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JPH01128399A (ja) * 1987-11-11 1989-05-22 Ishikawajima Harima Heavy Ind Co Ltd 粒子加速管の製造装置
US6331194B1 (en) * 1996-06-25 2001-12-18 The United States Of America As Represented By The United States Department Of Energy Process for manufacturing hollow fused-silica insulator cylinder
US5821705A (en) * 1996-06-25 1998-10-13 The United States Of America As Represented By The United States Department Of Energy Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators
KR100896906B1 (ko) * 2001-09-28 2009-05-12 지멘스 악티엔게젤샤프트 기판의 전기적 콘택트면들과 콘택트하기 위한 방법 및전기적 콘택트면들을 갖는 기판을 포함하는 디바이스
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Also Published As

Publication number Publication date
US20120133306A1 (en) 2012-05-31
DE102009036418B4 (de) 2011-06-22
WO2011015438A1 (fr) 2011-02-10
JP2013501328A (ja) 2013-01-10
DE102009036418A1 (de) 2011-02-10

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