EP2375459A1 - Lichtemittierende Vorrichtung, Gehäuse für lichtemittierende Vorrichtung und Beleuchtungssystem - Google Patents
Lichtemittierende Vorrichtung, Gehäuse für lichtemittierende Vorrichtung und Beleuchtungssystem Download PDFInfo
- Publication number
- EP2375459A1 EP2375459A1 EP11157951A EP11157951A EP2375459A1 EP 2375459 A1 EP2375459 A1 EP 2375459A1 EP 11157951 A EP11157951 A EP 11157951A EP 11157951 A EP11157951 A EP 11157951A EP 2375459 A1 EP2375459 A1 EP 2375459A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- electrode
- light emitting
- conductive type
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100031333A KR101014102B1 (ko) | 2010-04-06 | 2010-04-06 | 반도체 발광소자 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP2375459A1 true EP2375459A1 (de) | 2011-10-12 |
| EP2375459B1 EP2375459B1 (de) | 2016-03-09 |
Family
ID=43777329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP11157951.2A Active EP2375459B1 (de) | 2010-04-06 | 2011-03-11 | Lichtemittierende Vorrichtung, Gehäuse für lichtemittierende Vorrichtung und Beleuchtungssystem |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8884328B2 (de) |
| EP (1) | EP2375459B1 (de) |
| KR (1) | KR101014102B1 (de) |
| CN (1) | CN102214757B (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2816619A1 (de) * | 2013-06-19 | 2014-12-24 | LG Innotek Co., Ltd. | Lichtemittierende Vorrichtung und Beleuchtungsvorrichtung damit |
| KR20180112317A (ko) * | 2017-04-03 | 2018-10-12 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8536595B2 (en) * | 2010-08-31 | 2013-09-17 | Micron Technology, Inc. | Solid state lighting devices with low contact resistance and methods of manufacturing |
| KR101206523B1 (ko) | 2011-01-04 | 2012-11-30 | 갤럭시아포토닉스 주식회사 | 상부 핑거 및 하부 핑거를 갖는 발광 다이오드 및 발광 다이오드 패키지 |
| JP5652234B2 (ja) * | 2011-02-07 | 2015-01-14 | 日亜化学工業株式会社 | 半導体発光素子 |
| US8872217B2 (en) | 2011-04-15 | 2014-10-28 | Luminus Devices, Inc. | Electronic device contact structures |
| JP2012252078A (ja) * | 2011-06-01 | 2012-12-20 | Stanley Electric Co Ltd | 半導体発光素子およびストロボ装置 |
| JP5961377B2 (ja) * | 2011-12-21 | 2016-08-02 | スタンレー電気株式会社 | 半導体発光素子 |
| KR101883842B1 (ko) * | 2011-12-26 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 조명시스템 |
| JP5720601B2 (ja) * | 2012-02-14 | 2015-05-20 | 豊田合成株式会社 | 半導体発光素子 |
| KR101977278B1 (ko) * | 2012-10-29 | 2019-09-10 | 엘지이노텍 주식회사 | 발광 소자 |
| WO2014093410A1 (en) * | 2012-12-11 | 2014-06-19 | Sensor Electronic Technology, Inc. | Thermal management structure with integrated heat sink |
| JP6102677B2 (ja) * | 2012-12-28 | 2017-03-29 | 日亜化学工業株式会社 | 発光素子 |
| KR20140098564A (ko) * | 2013-01-31 | 2014-08-08 | 삼성전자주식회사 | 반도체 발광소자 |
| TWI604632B (zh) * | 2013-04-25 | 2017-11-01 | 晶元光電股份有限公司 | 發光二極體裝置 |
| TWI626395B (zh) * | 2013-06-11 | 2018-06-11 | 晶元光電股份有限公司 | 發光裝置 |
| JP2015012244A (ja) * | 2013-07-01 | 2015-01-19 | 株式会社東芝 | 半導体発光素子 |
| KR101435511B1 (ko) | 2013-07-23 | 2014-09-11 | 인하대학교 산학협력단 | 미로 모양 구조를 갖는 발광다이오드 |
| KR102478524B1 (ko) * | 2014-12-31 | 2022-12-19 | 서울바이오시스 주식회사 | 고효율 발광 다이오드 |
| CN104425538B (zh) * | 2013-09-03 | 2019-05-03 | 晶元光电股份有限公司 | 具有多个发光结构的发光元件 |
| US10304998B2 (en) * | 2013-09-27 | 2019-05-28 | Seoul Viosys Co., Ltd. | Light emitting diode chip and light emitting device having the same |
| KR102100937B1 (ko) * | 2013-09-30 | 2020-04-16 | 서울바이오시스 주식회사 | 함몰 돌기 패턴을 구비하는 발광다이오드 칩 |
| US9666779B2 (en) * | 2013-11-25 | 2017-05-30 | Yangzhou Zhongke Semiconductor Lighting Co., Ltd. | Semiconductor light emitting diode chip with current extension layer and graphical current extension layers |
| USD752527S1 (en) * | 2014-04-30 | 2016-03-29 | Epistar Corporation | Light-emitting diode device |
| TWD169527S (zh) | 2014-08-20 | 2015-08-01 | 晶元光電股份有限公司 | 發光二極體元件之部分 |
| US9905729B2 (en) * | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
| KR102458090B1 (ko) * | 2015-04-03 | 2022-10-24 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
| DE102015107577A1 (de) | 2015-05-13 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| JP6416800B2 (ja) * | 2016-01-26 | 2018-10-31 | 株式会社東芝 | 半導体装置 |
| CN105633242A (zh) * | 2016-03-28 | 2016-06-01 | 佛山市国星半导体技术有限公司 | 一种具有通孔电极的led芯片及其制作方法 |
| DE102017129783A1 (de) | 2017-12-13 | 2019-06-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| KR102513082B1 (ko) * | 2017-12-19 | 2023-03-23 | 삼성전자주식회사 | 반도체 발광소자 |
| DE102018124341A1 (de) * | 2018-10-02 | 2020-04-02 | Osram Opto Semiconductors Gmbh | Bauelement mit vergrößerter aktiver Zone und Verfahren zur Herstellung |
| WO2022203099A1 (ko) * | 2021-03-25 | 2022-09-29 | 엘지전자 주식회사 | 발광 소자 패키지 및 디스플레이 장치 |
| CN113270531B (zh) * | 2021-04-30 | 2022-07-22 | 广东德力光电有限公司 | 一种散热效果好的led芯片的制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040012030A1 (en) * | 2002-07-22 | 2004-01-22 | United Epitaxy Company, Ltd. | Structure of a light emitting diode and method of making the same |
| EP1553640A1 (de) * | 2002-08-01 | 2005-07-13 | Nichia Corporation | Halbleiter-lichtemissionsbauelement, verfahren zu seiner herstellung und lichtemissionsvorrichtung damit |
| EP1729349A1 (de) * | 2004-03-15 | 2006-12-06 | Zakrytoe Aksionernoe Obschestvo "Innovatsionnaya Firma "Tetis" | Hochleistungs-leuchtdiode |
| US20090039359A1 (en) * | 2007-08-10 | 2009-02-12 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved current spreading performance |
| WO2009075551A2 (en) * | 2007-12-13 | 2009-06-18 | Lg Innotek Co., Ltd | Semiconductor light emitting device and method of fabricating the same |
| EP2207211A1 (de) * | 2008-12-24 | 2010-07-14 | LG Innotek Co., Ltd. | Elektrodenstruktur für eine Leuchtdiode |
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| KR100708934B1 (ko) | 2005-11-15 | 2007-04-17 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
| KR101272705B1 (ko) * | 2006-11-09 | 2013-06-10 | 서울옵토디바이스주식회사 | 균일한 전류밀도 특성을 갖는 발광 다이오드 |
| KR100833311B1 (ko) * | 2007-01-03 | 2008-05-28 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
| US7732231B1 (en) * | 2009-06-03 | 2010-06-08 | Philips Lumileds Lighting Company, Llc | Method of forming a dielectric layer on a semiconductor light emitting device |
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| EP2816619A1 (de) * | 2013-06-19 | 2014-12-24 | LG Innotek Co., Ltd. | Lichtemittierende Vorrichtung und Beleuchtungsvorrichtung damit |
| US9209363B2 (en) | 2013-06-19 | 2015-12-08 | Lg Innotek Co., Ltd. | Light emitting device with improved current spreading performance and lighting apparatus including the same |
| US9318662B2 (en) | 2013-06-19 | 2016-04-19 | Lg Innotek Co., Ltd. | Light emitting device with improved current spreading performance and lighting apparatus including the same |
| KR20180112317A (ko) * | 2017-04-03 | 2018-10-12 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9406844B2 (en) | 2016-08-02 |
| EP2375459B1 (de) | 2016-03-09 |
| US8884328B2 (en) | 2014-11-11 |
| KR101014102B1 (ko) | 2011-02-10 |
| US20150034999A1 (en) | 2015-02-05 |
| US20110210345A1 (en) | 2011-09-01 |
| CN102214757A (zh) | 2011-10-12 |
| CN102214757B (zh) | 2016-01-20 |
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