EP2320281B1 - Method for manufacturing micromechanical parts - Google Patents

Method for manufacturing micromechanical parts Download PDF

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EP2320281B1
EP2320281B1 EP10189691.8A EP10189691A EP2320281B1 EP 2320281 B1 EP2320281 B1 EP 2320281B1 EP 10189691 A EP10189691 A EP 10189691A EP 2320281 B1 EP2320281 B1 EP 2320281B1
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Prior art keywords
wafer
comprised
glass
wafers
sccm
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German (de)
French (fr)
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EP2320281A2 (en
EP2320281A3 (en
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Marc-Alexandre Dubois
Jacek Baborowski
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Cartier Creation Studio SA
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Cartier Creation Studio SA
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    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/066—Manufacture of the spiral spring
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/063—Balance construction
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B29/00—Frameworks
    • G04B29/02—Plates; Bridges; Cocks
    • G04B29/027—Materials and manufacturing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Micromachines (AREA)

Description

Domaine techniqueTechnical area

La présente invention se rapporte le domaine de la micromécanique et plus particulièrement celui de l'horlogerie. Elle concerne un procédé de réalisation de pièces micromécaniques, réalisées en verre, notamment en verre céramique.The present invention relates to the field of micromechanics and more particularly that of watchmaking. It relates to a method for producing micromechanical parts, made of glass, in particular ceramic glass.

Etat de la techniqueState of the art

Parmi les verres, on appelle verre céramique (également appelée vitrocéramique) une famille de verres obtenus par cristallisation contrôlée. Des verres appropriés sont soumis à des traitements thermiques provoquant la nucléation puis la croissance de phases cristallines de diamètre typiquement compris entre 20nm et 1µm. Ces matériaux possèdent une porosité très faible, voire nulle. Après cristallisation, ils deviennent opaques ou translucides, suivant la taille des zones cristallines. Les principales vitrocéramiques sont constituées de SiO2, Al2O3, MgO, LiO2 ou Na2O. La résistance mécanique des vitrocéramiques est très supérieure à celle des verres, car les zones cristallines ralentissent ou arrêtent la propagation des fissures, avec une contrainte de rupture typiquement comprise entre 150 et 600MPa. Une autre propriété très intéressante des verres céramiques est leur potentiel à avoir un matériau de structure isotropique avec un coefficient thermique de dilatation très faible (c'est-à-dire inférieur à 5 x 10-6K-1) voire nul. En d'autres termes, une pièce réalisée en verre céramique peut présenter des dimensions parfaitement stables, quelles que soient les fluctuations de température, ce qui est notamment avantageux dans le cadre de ressorts spiraux et balanciers utilisés dans les organes réglants des mouvements mécaniques horlogers.Among the glasses, ceramic glass (also called glass-ceramic) is a family of glasses obtained by controlled crystallization. Appropriate glasses are subjected to heat treatments causing the nucleation then the growth of crystalline phases of diameter typically between 20 nm and 1 μm. These materials have a very low or even no porosity. After crystallization, they become opaque or translucent, depending on the size of the crystalline zones. The main vitroceramics consist of SiO 2 , Al 2 O 3 , MgO, LiO 2 or Na 2 O. The mechanical strength of vitroceramics is much higher than that of glasses, because the crystalline zones slow down or stop the propagation of cracks, with breaking stress typically between 150 and 600 MPa. Another very interesting property of ceramic glasses is their potential to have a material of isotropic structure with a very low thermal expansion coefficient (that is to say less than 5 × 10 -6 K -1 ) or even zero. In other words, a piece made of ceramic glass may have perfectly stable dimensions, whatever the temperature fluctuations, which is particularly advantageous in the context of spiral springs and balances used in the regulating organs of mechanical mechanical movements.

Ces propriétés rendent les verres céramiques particulièrement attractifs pour réaliser des pièces de précision, comme des pièces de mécanismes horlogers. Cependant, malgré leur résistance mécanique supérieure à celle des verres, les verres céramiques restent fragiles et, aux épaisseurs requises pour une utilisation dans le domaine de l'horlogerie, typiquement de l'ordre de 150µm, les techniques courantes de micro-usinage ne peuvent être utilisées, sans risque élevé que le verre ne casse.These properties make ceramic glasses particularly attractive for producing precision parts, such as parts of watch mechanisms. However, despite their higher mechanical strength than glasses, ceramic glasses remain fragile and, at thicknesses required for use in the field of watchmaking, typically of the order of 150 .mu.m, current micromachining techniques can not be used, without high risk that the glass breaks.

D'autres verres ont déjà utilises dans l'horlogerie. Par exemple, le document DE102008029429 mentionne la possibilité d'utiliser des verres de type borosilicate ou alumino-borosilicate pour réaliser certaines pièces de mécanismes horlogers, notamment des ancres ou des balanciers. Mais les techniques d'usinage proposées ne permettent pas de mettre en oeuvre ces matériaux pour réaliser des spiraux, dont les dimensions sont plus réduites que celles d'un balancier ou d'une ancre. Le document EP1791039 décrit un procédé de réalisation d'un spiral en verre qui nécessite un substrat en céramique résistant aux attaques acides. Le document DE19651321 décrit un balancier en verre céramique.Other glasses have already been used in watchmaking. For example, the document DE102008029429 mentions the possibility of using borosilicate or alumino-borosilicate type glasses to make certain parts of watchmaking mechanisms, in particular anchors or pendulums. But the proposed machining techniques do not allow to implement these materials to make spirals, whose dimensions are smaller than those of a pendulum or an anchor. The document EP1791039 discloses a method of producing a glass hairspring which requires a ceramic substrate resistant to acid attacks. The document DE19651321 describes a ceramic glass pendulum.

La présente invention a pour but de proposer un procédé permettant de travailler des pièces de verre, notamment en verre céramique, de très petites dimensions, de manière extrêmement précise, avec des risques de casse réduits.The object of the present invention is to propose a process for working glass pieces, in particular made of ceramic glass, of very small dimensions, in an extremely precise manner, with reduced risks of breakage.

Divulgation de l'inventionDisclosure of the invention

Plus particulièrement, l'invention porte sur un procédé de réalisation d'au moins une pièce micromécanique en verre, comprenant les étapes suivantes :

  • se doter d'un premier wafer de verre présentant un coefficient de dilatation thermique inférieur à 5 x 10-6K-1,
  • soudure d'un deuxième wafer de verre présentant un coefficient de dilatation thermique inférieur à 5 x 10-6K-1, au premier wafer, par l'intermédiaire d'une couche d'accroche, la pièce étant destinée à être réalisée dans le deuxième wafer,
  • croissance d'un masque métallique sur le deuxième wafer,
  • gravure traversante du deuxième wafer à travers le masque métallique, et
  • libération de la pièce en éliminant la couche d'accroche.
More particularly, the invention relates to a method for producing at least one micromechanical glass part, comprising the following steps:
  • have a first glass wafer with a coefficient of thermal expansion of less than 5 x 10 -6 K -1 ,
  • welding a second glass wafer having a coefficient of thermal expansion of less than 5 x 10 -6 K -1 , to the first wafer, via a tie layer, the piece being intended to be made in the second wafer,
  • growth of a metal mask on the second wafer,
  • through etching of the second wafer through the metal mask, and
  • release of the piece by eliminating the bonding layer.

D'autres caractéristiques du procédé sont définies dans les revendications de la présente demande.Other features of the process are defined in the claims of the present application.

Brève description des dessinsBrief description of the drawings

D'autres caractéristiques de la présente invention apparaîtront plus clairement à la lecture de la description qui va suivre, faite en référence aux figures 1 à 6 annexées, reprenant de manière schématique différentes étapes du procédé. On notera que les épaisseurs des différentes couches ne sont pas représentatives.Other features of the present invention will appear more clearly on reading the description which follows, made with reference to Figures 1 to 6 annexed, showing schematically different steps of the process. It will be noted that the thicknesses of the different layers are not representative.

Mode(s) de réalisation de l'inventionMode (s) of realization of the invention

Pour des applications micromécaniques, notamment dans le domaine de l'horlogerie, particulièrement des mouvements d'horlogerie, l'épaisseur des pièces fabriquées en verre, notamment en verre céramique, est de l'ordre de 150µm, plus généralement comprise entre 100 et 200µm. Dans le cadre d'un ressort spiral, les spires de ce dernier peuvent également avoir une largeur du même ordre. Ces valeurs ne sont pas limitatives, mais définissent sensiblement un domaine d'épaisseur où ces pièces présentent une tenue mécanique qui leur permet d'être utilisées dans un mécanisme d'horlogerie, mais qui ne leur permet pas d'être usinées par des techniques habituelles. Le verre utilisé est fourni sous forme de wafers, c'est-à-dire de feuilles dans lesquelles les pièces seront formées selon le procédé qui va être décrit ci-après. Les verres utilisés peuvent être des verres fournis dans le commerce. Pour ce qui concerne les verres céramiques, on peut utiliser le verre commercialisé sous le nom de ZERODUR™ par Schott. A titre d'exemple non limitatif, le procédé décrit ci-dessous se rapporte à la réalisation de pièces en verre céramique. L'homme du métier saura facilement l'adapter à d'autres verres présentant un coefficient de dilatation thermique sensiblement nul.For micromechanical applications, especially in the field of watchmaking, particularly watch movements, the thickness of parts made of glass, especially ceramic glass, is of the order of 150 .mu.m, more generally between 100 and 200 .mu.m. . In the context of a spiral spring, the turns of the latter can also have a width of the same order. These values are not limiting, but substantially define a range of thickness where these parts have a mechanical strength that allows them to be used in a clockwork mechanism, but which does not allow them to be machined by usual techniques . The glass used is supplied in the form of wafers, that is to say sheets in which the pieces will be formed according to the method which will be described below. The glasses used may be commercially available glasses. As for the ceramic glasses, it is possible to use the glass marketed under the name of ZERODUR ™ by Schott. By way of non-limiting example, the method described below relates to the production of ceramic glass parts. The skilled person will easily adapt to other glasses having a coefficient of thermal expansion substantially zero.

Ainsi, une première étape du procédé selon l'invention, consiste à se doter d'un premier wafer 10 de verre céramique. Comme on le comprendra par la suite, ce wafer n'est pas destiné à être utilisé pour la réalisation des pièces, mais est destiné à jouer une fonction de support ou de renfort mécanique.Thus, a first step of the method according to the invention consists in providing a first wafer 10 of ceramic glass. As will be understood later, this wafer is not intended to be used for the production of parts, but is intended to play a support function or mechanical reinforcement.

Une couche d'accroche 12, de préférence de silicium amorphe, est ensuite déposée sur le premier wafer. On relèvera que d'autres matériaux permettant de réaliser une soudure momentanée peuvent être utilisés comme couche d'accroche, notamment du germanium, de préférence amorphe.A tie layer 12, preferably of amorphous silicon, is then deposited on the first wafer. It will be noted that other materials allowing to make a momentary weld can be used as a bonding layer, especially germanium, preferably amorphous.

Un deuxième wafer 14 en verre céramique est ensuite soudé, de préférence par soudure anodique, au premier, par l'intermédiaire de la couche d'accroche (figure 1). L'homme du métier maitrise parfaitement les techniques de soudure anodique, sans qu'il soit besoin de les détailler davantage ici. Il pourrait être envisageable d'utiliser d'autres techniques de soudure mettant également en jeu des températures modérées, permettant de ne pas dégrader les propriétés du verre formant les wafer, ni l'état de surface des wafers. Bien entendu, la couche d'accroche 12 peut être alternativement déposée sur le deuxième wafer 14 avant l'étape de soudure. On notera que les pièces sont destinées à être réalisées dans ce deuxième wafer. De préférence, les deux wafers sont identiques (c'est-à-dire qu'ils sont fabriqués dans le même type de verre céramique et qu'ils ont la même épaisseur et les mêmes dimensions de surface), et le deuxième wafer est entièrement superposé au premier. Au moins toute la zone du deuxième wafer dans laquelle des pièces seront formées est disposée sur le premier wafer.A second ceramic glass wafer 14 is then welded, preferably by anodic welding, to the first, via the bonding layer ( figure 1 ). The skilled person perfectly masters the techniques of anodic welding, without the need to detail them further here. It could be possible to use other welding techniques also involving moderate temperatures, not to degrade the properties of the glass forming the wafer, or the surface condition of the wafers. Of course, the attachment layer 12 may be alternately deposited on the second wafer 14 before the soldering step. It should be noted that the parts are intended to be made in this second wafer. Preferably, the two wafers are identical (i.e. they are made of the same type of ceramic glass and have the same thickness and surface dimensions), and the second wafer is entirely superimposed on the first. At least the entire area of the second wafer in which pieces will be formed is disposed on the first wafer.

Ainsi, le premier et le deuxième wafers sont réalisés en verre céramique, ce qui permet de ne pas avoir d'effet négatif lié à une dilatation différentielle entre les deux wafers qui pourrait conduire, lors du refroidissement après la soudure anodique, à une déformation des wafers. De préférence, avec deux wafers identiques, parfaitement superposés l'un à l'autre, on obtient un système symétrique, dans lequel les contraintes subies lors de l'étape de gravure sont équilibrées.Thus, the first and second wafers are made of ceramic glass, which makes it possible to have no negative effect due to differential expansion between the two wafers which could lead, during cooling after the anodic welding, to deformation of the wafers. wafers. Preferably, with two identical wafers, perfectly superimposed on one another, a symmetrical system is obtained in which the stresses undergone during the etching step are balanced.

Ensuite, un masque métallique 16 est réalisé par croissance sur la face libre du deuxième wafer. De préférence, ce masque métallique est obtenu par une technique de type LIGA, mettant en oeuvre un moule de résine photosensible 18. Plus particulièrement, on dépose sur la face libre du deuxième wafer, une couche métallique conductrice 20, permettant d'effectuer ultérieurement une croissance galvanique. On dépose ensuite un masque de photoresist épais, de type SU8, ayant la forme et les dimensions des pièces à réaliser (figure 2). Par croissance galvanique, de Nickel par exemple, on réalise le masque métallique 16 dans les espaces laissés libres par le moule de résine photosensible 18 (figure 3). Le moule est ensuite dissous, ainsi que la couche métallique conductrice 20 rendue apparente par la dissolution du moule 18 (figure 4). Ces étapes sont connues de l'homme du métier et ne sont donc pas décrites davantage. On libère ainsi un masque métallique aux formes des pièces à réaliser.Then, a metal mask 16 is made by growth on the free face of the second wafer. Preferably, this metallic mask is obtained by a technique of LIGA type, implementing a photosensitive resin mold 18. More particularly, a conductive metal layer 20 is deposited on the free face of the second wafer, making it possible subsequently to perform a galvanic growth. A thick photoresist mask, type SU8, is then deposited, having the shape and dimensions of the parts to be produced ( figure 2 ). By galvanic growth, nickel for example, the mask is made 16 in the spaces left free by the photosensitive resin mold 18 ( figure 3 ). The mold is then dissolved, as is the conductive metal layer 20 made visible by the dissolution of the mold 18 ( figure 4 ). These steps are known to those skilled in the art and are therefore not described further. A metal mask is thus freed from the shapes of the parts to be produced.

Puis, on réalise une gravure traversante du deuxième wafer 14 à travers le masque métallique 16 (figure 5). Cette gravure peut, selon un mode de réalisation avantageux, être effectuée par une attaque plasma anisotrope en milieu fluoré, réalisée dans un réacteur de type ICP (Inductively Coupled Plasma), dont les paramètres sont les suivants :

  • Température du substrat : compris entre -5 et -20°C, particulièrement -10°C;
  • Débit de C4F8 : compris entre 10 et 20sccm, particulièrement 17sccm;
  • Débit d'Ar : compris entre 20 et 80sccm, particulièrement 50sccm;
  • Pression de travail : comprise entre 2 et 20.10-3mbar, particulièrement 8.10-3mbar;
  • Puissance RF de plasma: compris entre 2000 et 3500W, particulièrement 2800W ;
  • Puissance RF de porte substrat: compris entre 100 et 500W, particulièrement 200W.
Then, a through etching of the second wafer 14 is carried out through the metal mask 16 ( figure 5 ). This etching may, according to an advantageous embodiment, be carried out by an anisotropic plasma etching in a fluorinated medium, carried out in an ICP (Inductively Coupled Plasma) type reactor, the parameters of which are as follows:
  • Substrate temperature: -5 to -20 ° C, especially -10 ° C;
  • Flow rate of C 4 F 8 : between 10 and 20 sccm, especially 17 sccm;
  • Flow rate of Ar: between 20 and 80 sccm, especially 50 sccm;
  • Working pressure: between 2 and 20.10 -3 mbar, especially 8.10 -3 mbar;
  • Plasma RF power: between 2000 and 3500W, especially 2800W;
  • Substrate RF carrier power: between 100 and 500W, especially 200W.

Afin de libérer les pièces, on procède tout d'abord à l'élimination du masque métallique 16 et de la couche métallique conductrice 20 située sous lui, par gravure chimique (figure 6). Puis, dans une étape non illustrée, la couche d'accroche 12 est dissoute, de préférence par gravure isotrope, typiquement, mettant en oeuvre les paramètres suivants :

  • Température du substrat : compris entre 0 et 50°C, particulièrement 20°C;
  • Débit de SF6: compris entre 100 et 500sccm, particulièrement 300sccm;
  • Puissance RF plasma : compris entre 1000 et 2000W, particulièrement 1500W;
  • Aucune puissance sur le porte substrat.
In order to release the pieces, the metal mask 16 and the conductive metal layer 20 beneath it are first removed by chemical etching ( figure 6 ). Then, in a step not illustrated, the attachment layer 12 is dissolved, preferably by isotropic etching, typically implementing the following parameters:
  • Substrate temperature: between 0 and 50 ° C, particularly 20 ° C;
  • SF6 flow: between 100 and 500 sccm, especially 300 sccm;
  • Plasma RF power: between 1000 and 2000W, especially 1500W;
  • No power on the substrate holder.

En alternative, la libération peut également être effectuée par attaque chimique isotrope par voie humide, utilisant un bain de KOH ou de TMAH. On obtient ainsi les pièces désirées, libérées du premier wafer support 10. De manière à faciliter leur manipulation, le design des pièces peut être avantageusement prévu de manière à ce qu'elles soient encore tenues entre elles par les parties inutiles du wafer, par exemple par un point de liaison qui peut être facilement cassé par la suite.Alternatively, the release can also be carried out by wet isotropic etching using a KOH or TMAH bath. The desired parts, freed from the first support wafer 10, are thus obtained. In order to facilitate their handling, the design of the parts can advantageously be provided so that they are still held together by the useless parts of the wafer, for example by a connection point that can be easily broken afterwards.

Ainsi, le fait de souder le wafer à graver 14 sur un autre wafer support 10 permet de renforcer sa tenue mécanique et ainsi, de pouvoir réaliser des pièces dans ce matériau, malgré les difficultés liées à sa fragilité. En outre, les pièces sont maintenues en place jusqu'à la dissolution de la couche d'accroche, puisqu'elles restent attachées au wafer support par cette couche d'accroche.Thus, the fact of welding the wafer to engrave 14 on another wafer support 10 can strengthen its mechanical strength and thus to be able to make parts in this material, despite the difficulties associated with its fragility. In addition, the parts are held in place until the dissolution of the tie layer, since they remain attached to the support wafer by this tie layer.

La combinaison d'un masque métallique 16, obtenu par des procédés lithographiques, et de la technique de gravure exposée ci-dessus, permet de particulièrement bien définir les arêtes des pièces gravées. Ceci est important, étant donné que, à cause de leur fragilité, les pièces obtenues ne peuvent être retouchées. L'état de surface, notamment pour les arêtes, des pièces obtenues est également bien adapté aux applications micromécaniques et notamment horlogères. On notera également que, la gravure du verre céramique étant difficile, cette étape est très exothermique. De plus, le verre céramique conduit mal la chaleur et des procédés de masquage conventionnels ne peuvent donc pas être utilisés, car les masques en photoresist ne supporteraient pas la chaleur dégagée lors de la gravure. Avantageusement, une couche d'accroche de silicium participe à l'évacuation d'une partie de la chaleur produite. De même, le masque métallique doit être suffisamment résistant aux conditions de gravure, de manière à ne pas être totalement consommé lors de cette étape, tout en permettant de longues périodes de gravure. Le Nickel est ainsi bien adapté à cette application. On pourrait aussi envisager d'utiliser du Chrome, voire du Fer ou du Cuivre.The combination of a metal mask 16, obtained by lithographic processes, and the etching technique described above makes it possible to define the edges of the etched parts particularly well. This is important because, because of their fragility, the pieces obtained can not be retouched. The surface state, especially for the edges, of the parts obtained is also well suited to micromechanical and particularly watchmaking applications. Note also that, the etching of the ceramic glass being difficult, this step is very exothermic. In addition, ceramic glass poorly conducts heat and conventional masking methods can not be used, because photoresist masks would not withstand the heat generated during the etching. Advantageously, a silicon bonding layer participates in the evacuation of part of the heat produced. Similarly, the metal mask must be sufficiently resistant to the etching conditions, so as not to be completely consumed during this step, while allowing long periods of etching. Nickel is well adapted to this application. We could also consider using Chrome or even Iron or Copper.

Ainsi est proposé un procédé permettant de réaliser, de manière précise et contrôlée, des pièces micromécaniques en verre, en limitant grandement le risque de casse. La précision obtenue est parfaitement compatible avec une utilisation dans le domaine de l'horlogerie, notamment pour réaliser des éléments du mouvement, tant du bâti que des pièces mobiles.Thus is proposed a method for achieving, in a precise and controlled manner, micromechanical glass parts, greatly limiting the risk of breakage. The precision obtained is perfectly compatible with use in the field of watchmaking, in particular for making movement elements, both of the frame and moving parts.

En utilisant un verre céramique tel que le ZERODUR™ ayant un coefficient thermique de dilatation qui est sensiblement nul (c'est-a-dire inférieur à 5 x 10-6K-1, de préférence inférieur à 3 x 10-6K-1, de préférence inférieur à 2 x 10-6K-1), un lot de ressorts spiraux, chacun ayant par exemple des spires de dimensions en section de l'ordre de 100-200µm, peut être micro-usiné sans risque de casse élevé. Les spiraux résultants sont avantageusement dans un matériau de structure isotropique avec une résistance mécanique importante tout en présentant une élasticité qui est généralement indépendante de la température. De plus, un tel spiral peut aussi être combiné avec un balancier réalisé selon le procédé de la présente invention afin d'obtenir un système balancier spiral d'un isochronisme exceptionnel.By using a ceramic glass such as ZERODUR ™ having a thermal coefficient of expansion which is substantially zero (ie less than 5 x 10 -6 K -1 , preferably less than 3 x 10 -6 K - 1 , preferably less than 2 × 10 -6 K -1 ), a batch of spiral springs, each having, for example, coils with cross-sectional dimensions of the order of 100-200 μm, can be micromachined without risk of breakage. Student. The resulting spirals are advantageously in a material of isotropic structure with a high mechanical strength while having an elasticity which is generally independent of the temperature. In addition, such a hairspring can also be combined with a rocker made according to the method of the present invention to obtain a spiral balance system of exceptional isochronism.

Claims (15)

  1. A method for making at least one micromechanical glass part, comprising the following steps:
    - providing a first glass wafer (10) having a thermal expansion coefficient of less than 5 x 10-6K-1,
    - welding a second glass wafer (14) having a thermal expansion coefficient of less than 5 x 10-6K-1, to the first wafer, via an adhesion layer (12), said part being intended to be made in said second wafer,
    - growing a metal mask (16) on the second wafer,
    - through-etching the second wafer through the metal mask, and
    - releasing the part by removing the adhesion layer.
  2. The method according to claim 1, characterized in that said first and said second wafers are selected from glasses having a thermal expansion coefficient of less than 3 x 10-6K-1, preferably less than 2 x 10-6K-1.
  3. The method according to one of claims 1 and 2, characterized in that one and/or the other of the first and second wafers are made in ceramic glass.
  4. The method according to one of claims 1 to 3, characterized in that it further comprises a step for removing the metal mask (16) before removing the adhesion layer.
  5. The method according to one of the preceding claims, characterized in that growth of the metal mask (16) is obtained:
    - by application of a mold of photosensitive resin (18) having the shape and the dimensions of the part to be made, and then
    - by galvanic growth of metal in the spaces left free by the mold of photosensitive resin,
    - by dissolution of the mold of photosensitive resin so as to release the metal mask.
  6. The method according to one of the preceding claims, characterized in that the etching step is carried out by anisotropic plasma etching in a fluorinated medium, produced in a reactor of the ICP (Inductively Coupled Plasma) type.
  7. The method according to claim 6, characterized in that the anisotropic plasma etching is carried out with the following parameters:
    - a temperature of the substrate: comprised between -5 and -20°C, particularly -10°C;
    - C4F8 flow rate: comprised between 10 and 20 sccm, particularly 17 sccm;
    - Ar flow rate: comprised between 20 and 80 sccm, particularly 50 sccm;
    - working pressure: comprised between 2 and 20.10-3 mbars, particularly 8.10-3 mbars;
    - plasma RF power: comprised between 2,000 and 3,500W, particularly 2,800W;
    - substrate holder RF power: comprised between 100 and 500W, particularly 200W.
  8. The method according to one of the preceding claims, characterized in that the release step is carried out by isotropic etching.
  9. The method according to claim 8, characterized in that said isotropic etching is carried out with the following parameters:
    - temperature of the substrate: comprised between 0 and 50°C, particularly 20°C;
    - SF6 flow rate: comprised between 100 and 500 sccm, particularly 300 sccm;
    - plasma RF power: comprised between 1,000 and 2,000W, particularly 1,500W;
    - no power on the substrate holder.
  10. The method according to one of the preceding claims, characterized in that the adhesion layer (12) is made in amorphous silicon.
  11. The method according to one of the preceding claims, characterized in that the first and second wafers have a thickness comprised between 100 and 200 µm, typically 150 µm.
  12. The method according to one of the preceding claims, characterized in that the first and second wafers are identical in terms of glass type, of thickness and surface dimensions, and in that the first and second wafers are entirely superposed on each other during the welding step.
  13. The method according to one of the preceding claims, characterized in that the adhesion layer is deposited on the first wafer before the welding step.
  14. The method according to one of the preceding claims, characterized in that the welding of the first and second wafers is carried out by anodic welding.
  15. A coil spring characterized in that it is made in a ceramic glass which has an isotropic structure and has a thermal expansion coefficient of less than 5 x 10-6K-1.
EP10189691.8A 2009-11-10 2010-11-02 Method for manufacturing micromechanical parts Active EP2320281B1 (en)

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CH01729/09A CH702151A1 (en) 2009-11-10 2009-11-10 Pieces of method for producing micromechanical including glass ceramic.

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EP2320281A3 EP2320281A3 (en) 2012-09-26
EP2320281B1 true EP2320281B1 (en) 2015-07-15

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CN102992638B (en) * 2012-11-30 2015-05-27 北京遥测技术研究所 Method for removing micro mask to improve quartz corrosion surface smoothness
CN104743499B (en) * 2013-12-30 2016-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 The process of glass substrate
FR3039292B1 (en) * 2015-07-24 2019-05-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives SPIRAL SPRING AND METHOD OF MAKING THE SPIRAL SPRING
EP3495894B1 (en) * 2017-12-05 2023-01-04 Rolex Sa Method for manufacturing a clock component
TWI774925B (en) * 2018-03-01 2022-08-21 瑞士商Ｃｓｅｍ瑞士電子及微技術研發公司 Method for manufacturing a spiral spring
CN111968910A (en) * 2020-08-26 2020-11-20 北京北方华创微电子装备有限公司 Processing method of substrate in chip fan-out packaging structure
CN115647757B (en) * 2022-12-26 2023-04-04 西安航天精密机电研究所 Manufacturing method of two-floating-gyro conductive hairspring

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