CN102992638B - Method for removing micro mask to improve quartz corrosion surface smoothness - Google Patents
Method for removing micro mask to improve quartz corrosion surface smoothness Download PDFInfo
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- CN102992638B CN102992638B CN201210512895.8A CN201210512895A CN102992638B CN 102992638 B CN102992638 B CN 102992638B CN 201210512895 A CN201210512895 A CN 201210512895A CN 102992638 B CN102992638 B CN 102992638B
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Abstract
The invention relates to a method for removing a micro mask to improve quartz corrosion surface smoothness. A laser processing etching mask plate is utilized as a mask layer to carry out plasma etching on the residual metal and photoresist on a quartz surface, an etching process consists of four steps of cleaning, registering, residual photoresist etching and residual metal etching, a registering process is similar to a picture aligning process of contact photoetching, and a stainless steel plate and an element wafer are aligned to each other through alignment marks which are processed in advance. The method can be used to overcome structural graphic distortion which is caused by over exposing, over developing and over etching for removing the mask, the high etching precision is kept, physical bombardment and chemical function are integrated together, and the method has high etching directivity, high rate and selection ratio and an obvious micro mask removing effect, is simple to operate, is low in cost and is significant to improve the wet etching surface smoothness of a piezoelectric quartz element.
Description
Technical field
The present invention relates to quartz corrosion, specifically relating to a kind of micro-mask minimizing technology for improving quartzy corrosion surface smooth finish.
Background technology
Quartz crystal, has been widely used in manufacturing electroacoustics transducer, resonator, wave filter and sensor element with high quality factor and good thermostability as a kind of typical piezoelectric for many years.
The metallic film that the processing of piezo-quartz element adopts physical vapor deposition to prepare usually, as masking film, utilizes ultraviolet photolithographic technology that it is graphical, then obtains final structure by the corrosion of fluorine-based wet corrosive fluid.For some elements, there is a part of structure to need to be prepared by single-sided corrosion, namely the one side of these structures is that corrosion obtains, and the mean roughness in this face and peak of profile peak value often exist critical impact for the yield rate of device and the frequency-temperature characteristic of structure.
The roughness on quartz wet etching surface is relevant with several factors with peak of profile peak value, the parameter (relating to concentration, proportioning, temperature) of such as corrosive fluid itself, alr mode and the minute mask (also known as micro-mask) with certain sticking power be made up of metal and photoresist material remnants etc.Great many of experiments shows, this mask blocks contact of quartzy wet etching liquid and wafer surface slightly, makes quartzy erosional surface occur the hillock of triangular pyramidal, finally causes corrosion surface roughness and peak of profile peak value to increase.
Microscopic examination shows, the source of micro-mask mainly contains two kinds, be the splatter point introduced in metal shadowing film preparation process, these areas adjacent film thicknesses that splash are much larger than other regions, and in masking film patterning process, these points that splash are difficult to remove totally; Another kind is the unstable coming from ultraviolet photolithographic process itself, and after development terminates, the photoresist material region that should remove is residual counterdie sometimes, and these counterdies have impact on the graphical of metal shadowing film simultaneously, finally introduces metal and photoresist material remnants.
In metal shadowing film photoetching process, the generation of micro-mask obviously can be reduced by increasing exposure, development and metal wet etching time, but overexposure, excessively development and excessive erosion all can affect the precision of metal shadowing figure, the serious distortion that even can cause masking graphics, cannot meet the requirement of quartz element structure erosion.
Summary of the invention
The object of the invention is to the above-mentioned deficiency overcoming prior art, be provided for the micro-mask minimizing technology improving quartzy corrosion surface smooth finish, the method maintains the high precision of photoetching, and merged physical bombardment and chemical action, etching good directionality, speed and Selection radio is high, remove micro-masking effect obvious, and simple to operate, cost is low.
Above-mentioned purpose of the present invention is mainly achieved by following technical solution:
For improving micro-mask minimizing technology of quartzy corrosion surface smooth finish, comprise the steps:
Step (one), on etching mask plate, process hollow out figure, and etching mask plate and liner plate, trip bolt, element wafer, pressing plate are assembled, obtain plasma etching fixture, concrete assembly method is as follows:
(a), by etching mask plate and pressing plate vacuum engagement;
(b), element wafer is positioned over below etching mask plate, keep certain interval with etching mask plate;
(c), by the pattern alignment needing to carry out micro-mask removal by obtaining after metal shadowing film pattern on the hollow out figure on etching mask plate and element wafer;
(d), element wafer contacted with etching mask plate and vacuum engagement;
(e), liner plate is contacted with element wafer, each layer is locked through pressing plate and liner plate by trip bolt;
Step (two), plasma etching fixture is loaded microwave oxygen gas plasma stripping machine carry out residual photoresist etching to element wafer needing the figure carrying out micro-mask removal, again plasma etching fixture is loaded Ar ion bean etcher afterwards and carry out residual metal etching to element wafer needing the figure carrying out micro-mask removal.
Above-mentioned for improving in micro-mask minimizing technology of quartzy corrosion surface smooth finish, etching mask plate is stainless steel plate, quartz wafer or silicon wafer, processes hollow out figure by laser or lithographic technique.
Above-mentioned for improving in micro-mask minimizing technology of quartzy corrosion surface smooth finish, the thickness of etching mask plate is 100 ~ 200 μm.
Above-mentioned for improving in micro-mask minimizing technology of quartzy corrosion surface smooth finish, pressing plate is stainless steel, and thickness is 2 ~ 5mm, and roughness is lower than 0.1 μm;
Above-mentioned for improving in micro-mask minimizing technology of quartzy corrosion surface smooth finish, liner plate is copper coin, and thickness is 3 ~ 5mm, and roughness is lower than 0.1 μm.
Above-mentioned for improving in micro-mask minimizing technology of quartzy corrosion surface smooth finish, in step (b), element wafer and etching mask plate keep 20 ~ 30 μm of gaps.
Above-mentioned for improving in micro-mask minimizing technology of quartzy corrosion surface smooth finish, in step (two), plasma etching fixture is loaded microwave oxygen gas plasma stripping machine to when element wafer needing the figure carrying out micro-mask removal carry out residual photoresist etching, etching power is 50 ~ 300W, and etching time is 0.5 ~ 2 minute.
Above-mentioned for improving in micro-mask minimizing technology of quartzy corrosion surface smooth finish, in step (two), plasma etching fixture is loaded Ar ion bean etcher to when element wafer needing the figure carrying out micro-mask removal carry out residual metal etching, ion beam current is 30 ~ 50mA, plate voltage is 200 ~ 500V, and etching time is 0.5 ~ 1.5 hour.
Above-mentioned for improving in micro-mask minimizing technology of quartzy corrosion surface smooth finish, etching mask plate and element wafer all have alignment windows, microscopic examination is passed through in step (c), utilize the displacement adjusting device of lithography machine, alignment windows on etching mask plate is aimed at the alignment windows on element wafer, thus the hollow out figure realized on etching mask plate and element wafer need the pattern alignment carrying out micro-mask removal.
The present invention compared with prior art beneficial effect is:
(1) the present invention is by innovative design plasma etching fixture, quartz treated the residual metal of corrosion surface and photoresist material etc. are removed clean by plasma etching, avoid and utilize overexposure, excessively development and excessive erosion to remove the aliasing that micro-mask brings, the residual metal and photoresist material that stop quartz corrosion can be removed after metal shadowing film normal photolithography graphically completes, make metal shadowing film pattern still maintain the high precision of photoetching;
(2) the present invention uses plasma etching technology to remove micro-mask, and the method has merged physical bombardment and chemical action, and etching good directionality, speed and Selection radio is high, removes micro-masking effect obvious;
(3) the etching mask plate that the present invention uses can be stainless steel plate, quartz wafer or silicon wafer etc., hollow out figure on etching mask plate can utilize laser or lithographic technique to process, preparation method is ripe, tolerance plasma etching ability is strong, easy to clean, can repeatedly reuse, cost is lower;
(4) the present invention determines the optimum process condition adopting microwave oxygen gas plasma stripping machine and Ar ion bean etcher to carry out residual photoresist etching and residual metal etching by lot of experiments, and the material of each assembly and size are optimized design in plasma etching fixture, further increase and remove micro-masking effect;
(5) instant invention overcomes by exposure, cross development and the structure graph distortion that micro-mask causes is removed in excessive erosion, can while holding structure pattern precision, realize the removal of micro-mask, operational process of craft is simple, significant for raising piezo-quartz element wet etching surface smoothness;
(6) the present invention uses lithography machine to complete the accurate aligning of mask plate and element wafer surfacial pattern, easy and simple to handle.
Accompanying drawing explanation
Fig. 1 is piezo-quartz component structure schematic diagram of the present invention;
Fig. 2 is element wafer schematic diagram before wet etching of the present invention;
Fig. 3 is etching mask plate schematic diagram of the present invention;
Figure 4 shows that etching mask plate of the present invention aims at schematic diagram with element wafer;
Fig. 5 is plasma etching Fixture assembly schematic diagram of the present invention;
Fig. 6 is the micro-mask etching schema of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
Be described in detail for piezo-quartz element, be illustrated in figure 1 the structural representation of piezo-quartz element of the present invention, piezo-quartz element is made up of thin beam 2 and Bao Liang 2 two ends clamped piece 1 as seen from the figure, and the thickness of Bao Liang 2 is much smaller than the thickness of other positions.The general preparation method of thin beam 2 is, first at quartz wafer surface both sides thereof metal shadowing film; Then pass through dual surface lithography technology by metal shadowing film pattern, thus obtain the structure graph of thin beam; Thin beam 2 structure is obtained finally by fluorine-based wet corrosive fluid etch quartz wafer.After the micro-mask removing step of the present invention should be positioned at metal shadowing film pattern, before wet etching quartz wafer, quartz treated the residual metal of corrosion surface (i.e. thin Liang2Chu before corrosion) and photoresist material etc. are removed clean by plasma etching, ensure the good contact of fluorine-based wet corrosive fluid and wafer surface, final acquisition surfaceness is low, the thin beam 2 that peak of profile peak value is little.Piezo-quartz element shown in Fig. 1 is the component structure after wet etching.
Be illustrated in figure 2 element wafer schematic diagram before wet etching of the present invention, now the metal shadowing film on element wafer 3 surface is graphical, two ends (clamped piece of 1 figure) all exist at wafer 3 front, the back side, middle (Bao Liang 2 figure) exists only in wafer 3 back side, therefore the corrosion being positioned at the thin beam 2 in the middle part of each figure is single-sided corrosion, and other positions of structure are the corrosion of two-sided penetration.The symmetrical cross figure 4 in wafer 3 front is alignment mark, for realizing aiming at of wafer 3 and etching mask plate 5 alignment windows 7.
Be illustrated in figure 3 the schematic diagram of etching mask plate of the present invention, its thickness is about 100 ~ 200 μm, and surface through electrochemical polishing treatment, thus is avoided scratching wafer 3 front.Square structure in figure is through hole, is formed by laser processing, and working accuracy is 0.01mm.9 square holes of middle portion are micro-mask etching window 6 that element wafer treats corrosion surface, i.e. hollow out figure, all the other 4 square holes are alignment windows 7, convenient realization is aimed at the surperficial cross figure 4 of wafer 3, etching mask plate 5 can select stainless steel plate, quartz wafer or silicon wafer, process hollow out figure by laser or lithographic technique, in the present embodiment, adopt stainless steel plate to be etching mask plate 5.
Be illustrated in figure 4 etching mask plate of the present invention and aim at schematic diagram with element wafer, in micro-mask-removal process, the wafer surface being positioned at micro-mask etching window 6 inside can be subject to the bombardment of plasma body, and window-external is blocked and partly can not be subject to the effect of plasma body.
Be illustrated in figure 5 the assembling schematic diagram of plasma etching fixture.As seen from the figure, plasma etching fixture is assembled by pressing plate 8, liner plate 9 and trip bolt 10, and element wafer 3 and stainless steel mask plate 5 are clipped in the middle of pressing plate 8 and liner plate 9 by order in figure, and each Rotating fields is locked eventually through trip bolt 10.Pressing plate 8 is processed by stainless material, and have good anti-etching ability, thickness is about 2 ~ 5mm, has good intensity, the surface finish contacted with stainless steel plate 5, and roughness, lower than 0.1 μm, is avoided stainless steel plate 5 to scratch.In pressing plate 8, the position local hollow out corresponding with the square hole 6 of stainless steel plate 5, ensures that plasma etch process is not blocked.Liner plate 9 is fine copper material, there is good conduction and the capacity of heat transmission, can ensure that the electric charge that accumulates in etching process and heat are led away in time, thickness is about 3 ~ 5mm, there is good intensity, the surface contacted with element wafer 3 can obtain the surfaceness lower than 0.1 μm by polishing, avoids the scuffing to element wafer 3 back side.Trip bolt 10 is TMFC, and the through hole provided with pressing plate 8 and liner plate 9 coordinates, and realizes the locking of each Rotating fields.
The assembling process of plasma etching fixture be similar to contact photolithography to version operation, specific as follows:
Step one, first by stainless steel mask plate 5 and pressing plate 8 vacuum engagement, element wafer 3 to be positioned on the downside of stainless steel plate 5, and fully close with stainless steel plate 5, only keep the gap of 20 ~ 30 μm.
Step 2, then, utilizing the displacement adjusting device of lithography machine the alignment windows of 4 in stainless steel plate 57 to be aimed at the cross figure 4 on element wafer 3 under the microscope, realizing the pattern alignment needing to carry out micro-mask removal by obtaining after metal shadowing film pattern on hollow out figure on stainless steel plate 56 and element wafer 3.
After step 3, aligning, element wafer 3 is contacted with stainless steel plate 5 and adhesive; Finally by liner plate 9 and element wafer 3 rear-face contact, each layer, through pressing plate 8 and liner plate 9, is locked thus completes whole assembling process by trip bolt 10.
Be illustrated in figure 6 the micro-mask of the present invention and remove schema, as shown in the figure, pressing plate 8, stainless steel plate 5, element wafer 3, liner plate 9 and the trip bolt 10 used in the course of processing should be cleaned by the organic solvent such as acetone, alcohol is ultrasonic before etching, should deionized water ultrasonic cleaning be passed through for surface with the element wafer 3 of photoresist material, any organic solvent must not be contacted; Then complete the assembling of plasma etching fixture, detailed process as previously mentioned; Then carry out micro-mask etching, detailed process is as follows:
Step one, plasma etching fixture is loaded 2.45GHz microwave oxygen gas plasma stripping machine, etching power is 50 ~ 300W, etching time 0.5 ~ 2 minute;
Step 2, machine after plasma etching fixture taken out and loads Ar ion bean etcher and realize residual metal etching, ion beam current 30 ~ 50mA, plate voltage 200 ~ 500V, etching time 0.5 ~ 1.5 hour;
Split by plasma etching fixture after step 3, etching terminate and taken out by element wafer 3, wafer 3 can enter wet etching operation.
The present invention utilizes the stainless steel plate of laser processing to remove micro-mask on quartz wafer surface as mask layer.By process on stainless steel plate and element wafer corresponding alignment mark realize both aim at, alignment procedures and common contact-type photoetching similar to version operation.Adopt stainless steel platen, fine copper liner plate and trip bolt to form plasma etching fixture, by stainless steel plate and wafer compacting, avoid pattern dislocation occurring therebetween.Using plasma lithographic technique removed by micro-mask, and whole micro-mask etching process is divided into cleaning, removes four steps to version, residual photoresist removal, residual metal.
The inventive method utilizes plasma etching technology to remove micro-mask after metal shadowing film normal photolithography completes, and metal shadowing film pattern still maintains the high precision of photoetching; Plasma etching has the ability removing the multiple material such as metal, organism, and directivity, etch rate and Selection radio are desirable; Utilize the stainless steel plate of laser processing to have good resistance to corrosion as the mask layer of plasma etching, meanwhile, stainless steel plate can repeatedly reuse, and relative cost is lower; Utilize lithography machine conveniently can realize aiming at of stainless steel mask plate and figure on wafer, alignment precision is high.
The above; be only the embodiment of the best of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.
The content be not described in detail in specification sheets of the present invention belongs to the known technology of professional and technical personnel in the field.
Claims (7)
1., for improving micro-mask minimizing technology of quartzy corrosion surface smooth finish, it is characterized in that comprising the steps:
Step (one), on etching mask plate (5), process hollow out figure, and etching mask plate (5) and liner plate (9), trip bolt (10), element wafer (3), pressing plate (8) are assembled, obtain plasma etching fixture, concrete assembly method is as follows:
(a), by etching mask plate (5) and pressing plate (8) vacuum engagement;
(b), element wafer (3) is positioned over etching mask plate (5) below, keep certain interval with etching mask plate (5);
(c), by the pattern alignment needing to carry out micro-mask removal by obtaining after metal shadowing film pattern on the hollow out figure on etching mask plate (5) and element wafer (3);
(d), element wafer (3) contacted with etching mask plate (5) and vacuum engagement;
(e), liner plate (9) is contacted with element wafer (3), each layer is locked through pressing plate (8) and liner plate (9) by trip bolt (10);
Step (two), plasma etching fixture is loaded microwave oxygen gas plasma stripping machine carry out residual photoresist etching to element wafer (3) needing the figure carrying out micro-mask removal, etching power is 50 ~ 300W, and etching time is 0.5 ~ 2 minute; Again plasma etching fixture is loaded Ar ion bean etcher afterwards and carry out residual metal etching to element wafer (3) needing the figure carrying out micro-mask removal, ion beam current is 30 ~ 50mA, plate voltage is 200 ~ 500V, and etching time is 0.5 ~ 1.5 hour.
2. the micro-mask minimizing technology for improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: described etching mask plate (5) is stainless steel plate, quartz wafer or silicon wafer, processes hollow out figure by laser or lithographic technique.
3. the micro-mask minimizing technology for improving quartzy corrosion surface smooth finish according to claim 1 and 2, is characterized in that: the thickness of described etching mask plate (5) is 100 ~ 200 μm.
4. the micro-mask minimizing technology for improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: described pressing plate (8) is stainless steel, thickness is 2 ~ 5mm, and roughness is lower than 0.1 μm.
5. the micro-mask minimizing technology for improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: described liner plate (9) is copper coin, thickness is 3 ~ 5mm, and roughness is lower than 0.1 μm.
6. the micro-mask minimizing technology for improving quartzy corrosion surface smooth finish according to claim 1, is characterized in that: in described step (b), element wafer (3) and etching mask plate (5) keep 20 ~ 30 μm of gaps.
7. the micro-mask minimizing technology for improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: described etching mask plate (5) and element wafer (3) all have alignment windows, microscopic examination is passed through in step (c), utilize the displacement adjusting device of lithography machine, alignment windows on etching mask plate (5) is aimed at the alignment windows on element wafer (3), thus the hollow out figure realized on etching mask plate (5) and element wafer (3) need the pattern alignment carrying out micro-mask removal.
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| CN109686649A (en) * | 2017-10-19 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | Alignment mark cleaning method and semiconductor making method |
| CN115857287B (en) * | 2023-02-20 | 2023-05-26 | 中北大学 | Preparation method of graphene microstructure |
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| EP2320281A2 (en) * | 2009-11-10 | 2011-05-11 | Cartier Création Studio S.A. | Method for manufacturing micromechanical parts |
| CN103043600A (en) * | 2012-12-13 | 2013-04-17 | 中国科学院物理研究所 | Preparation method of three-dimensional self-supporting micro-nano functional structure based on thin film material |
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