CN102992638A - Method for removing micro mask to improve quartz corrosion surface smoothness - Google Patents
Method for removing micro mask to improve quartz corrosion surface smoothness Download PDFInfo
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- CN102992638A CN102992638A CN2012105128958A CN201210512895A CN102992638A CN 102992638 A CN102992638 A CN 102992638A CN 2012105128958 A CN2012105128958 A CN 2012105128958A CN 201210512895 A CN201210512895 A CN 201210512895A CN 102992638 A CN102992638 A CN 102992638A
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Abstract
The invention relates to a method for removing a micro mask to improve quartz corrosion surface smoothness. A laser processing etching mask plate is utilized as a mask layer to carry out plasma etching on the residual metal and photoresist on a quartz surface, an etching process consists of four steps of cleaning, registering, residual photoresist etching and residual metal etching, a registering process is similar to a picture aligning process of contact photoetching, and a stainless steel plate and an element wafer are aligned to each other through alignment marks which are processed in advance. The method can be used to overcome structural graphic distortion which is caused by over exposing, over developing and over etching for removing the mask, the high etching precision is kept, physical bombardment and chemical function are integrated together, and the method has high etching directivity, high rate and selection ratio and an obvious micro mask removing effect, is simple to operate, is low in cost and is significant to improve the wet etching surface smoothness of a piezoelectric quartz element.
Description
Technical field
The present invention relates to quartzy corrosion, specifically relate to a kind of little mask removal method be used to improving quartzy corrosion surface smooth finish.
Background technology
Quartz crystal with high quality factor and good thermostability, has been widely used in making electroacoustics transducer, resonator, wave filter and sensor element as a kind of typical piezoelectric for many years.
The processing of piezo-quartz element adopts the metallic film of physical vapor deposition preparation as masking film usually, utilizes the ultraviolet photolithographic technology that it is graphical, obtains final structure by fluorine-based wet etching corrosion again.For some elements, exist a part of structure to prepare by single-sided corrosion, the one side that is these structures is that corrosion obtains, and often there are critical impact in the mean roughness of this face and peak of profile peak value for the yield rate of device and the frequency-temperature characteristic of structure.
The roughness on quartzy wet etching surface is relevant with several factors with the peak of profile peak value, such as parameter (relating to concentration, proportioning, temperature), the alr mode of corrosive fluid itself and the small mask with certain sticking power (claiming again little mask) that is made of metal and photoresist material remnants etc.Great many of experiments shows, this slightly mask blocks contacting of quartzy wet etching liquid and wafer surface so that the hillock of triangular pyramidal appears in quartzy erosional surface, finally cause corrosion surface roughness and peak of profile peak value to increase.
Microscopic examination shows, the source of little mask mainly contains two kinds, a kind of is that the metal of introducing in the metal shadowing film preparation process splashes a little, and film thickness is much larger than other zones near these zones of splashing, and these splash and a little are difficult to remove totally in the graphical process of masking film; Another kind is the unstable that comes from ultraviolet photolithographic process itself, develops after the end, and the photoresist material zone that should remove is residual counterdie sometimes, and these counterdies have affected the graphical of metal shadowing film simultaneously, and it is remaining finally to have introduced metal and photoresist material.
In metal shadowing film photoetching process, can obviously reduce the generation of little mask by increasing exposure, development and metal wet etching time, but overexposure, mistake development and excessive erosion all can affect the precision of metal shadowing figure, serious even can cause masking graphics distortion can't be satisfied the requirement of quartz element structure erosion.
Summary of the invention
The object of the invention is to overcome the above-mentioned deficiency of prior art, be provided for improving little mask removal method of quartzy corrosion surface smooth finish, the method has kept the high precision of photoetching, and physical bombardment and chemical action have been merged, etching good directionality, speed and selection are than high, it is obvious to remove little masking effect, and simple to operate, and cost is low.
Above-mentioned purpose of the present invention mainly is achieved by following technical solution:
Be used for improving little mask removal method of quartzy corrosion surface smooth finish, comprise the steps:
Step (one), process the hollow out figure at the etching mask plate, and etching mask plate and liner plate, trip bolt, element wafer, pressing plate are assembled, obtain the plasma etching anchor clamps, concrete assembly method is as follows:
(a), with etching mask plate and pressing plate vacuum engagement;
(b), element wafer is positioned over etching mask plate below, with etching mask plate maintenance certain interval;
(c), will carry out the pattern alignment that little mask is removed by the needs that obtain behind the metal shadowing film pattern on the hollow out figure on the etching mask plate and the element wafer;
(d), element wafer is contacted also vacuum engagement with the etching mask plate;
(e), liner plate is contacted with element wafer, trip bolt passes pressing plate and liner plate with each layer locking;
Step (two), the plasma etching anchor clamps microwave oxygen gas plasma stripping machine of packing into is carried out the residual photoresist etching to the figure that needs to carry out little mask on the element wafer and remove, the Ar ion bean etcher of again the plasma etching anchor clamps being packed into afterwards carries out the residual metal etching to the figure that needs to carry out little mask on the element wafer and remove.
In above-mentioned little mask removal method for improving quartzy corrosion surface smooth finish, the etching mask plate is stainless steel plate, quartz wafer or silicon wafer, processes the hollow out figure by laser or lithographic technique.
In above-mentioned little mask removal method for improving quartzy corrosion surface smooth finish, the thickness of etching mask plate is 100～200 μ m.
In above-mentioned little mask removal method for improving quartzy corrosion surface smooth finish, pressing plate is stainless steel, and thickness is 2～5mm, and roughness is lower than 0.1 μ m;
In above-mentioned little mask removal method for improving quartzy corrosion surface smooth finish, liner plate is copper coin, and thickness is 3～5mm, and roughness is lower than 0.1 μ m.
In above-mentioned little mask removal method for improving quartzy corrosion surface smooth finish, element wafer and etching mask plate keep 20～30 μ m gaps in the step (b).
In above-mentioned little mask removal method for improving quartzy corrosion surface smooth finish, when the microwave oxygen gas plasma stripping machine of in the step (two) the plasma etching anchor clamps being packed into carries out the residual photoresist etching to the figure that needs to carry out little mask on the element wafer and remove, etching power is 50～300W, and etching time is 0.5～2 minute.
In above-mentioned little mask removal method for improving quartzy corrosion surface smooth finish, when the Ar ion bean etcher of in the step (two) the plasma etching anchor clamps being packed into carries out the residual metal etching to the figure that needs to carry out little mask on the element wafer and remove, ion beam current is 30～50mA, plate voltage is 200～500V, and etching time is 0.5～1.5 hour.
In above-mentioned little mask removal method for improving quartzy corrosion surface smooth finish, all have alignment windows on etching mask plate and the element wafer, in the step (c) by microscopic examination, utilize the displacement adjusting device of lithography machine, alignment windows on the etching mask plate is aimed at the alignment windows on the element wafer, thereby need to carry out the pattern alignment that little mask is removed on the hollow out figure on the realization etching mask plate and the element wafer.
The present invention compared with prior art beneficial effect is:
(1) the present invention is by innovative design plasma etching anchor clamps, by plasma etching quartz is treated that the residual metal of corrosion surface and photoresist material etc. remove clean, avoided utilizing overexposure, mistake development and excessive erosion to remove the aliasing that little mask brings, can after graphically finishing, remove metal shadowing film normal photolithography the residual metal and the photoresist material that stop quartzy corrosion, so that the metal shadowing film pattern has still kept the high precision of photoetching;
(2) the present invention uses plasma etching technology to remove little mask, and the method has merged physical bombardment and chemical action, and etching good directionality, speed and selection are than high, and it is obvious to remove little masking effect;
(3) the etching mask plate that uses of the present invention can be stainless steel plate, quartz wafer or silicon wafer etc., hollow out figure on the etching mask plate can utilize laser or lithographic technique to process, the preparation method is ripe, tolerance plasma etching ability is strong, easy to clean, can repeatedly reuse, cost is lower;
(4) the present invention has determined to adopt microwave oxygen gas plasma stripping machine and Ar ion bean etcher to carry out the optimum process condition of residual photoresist etching and residual metal etching by lot of experiments, and material and the size of each assembly is optimized design in the plasma etching anchor clamps, further improved and removed little masking effect;
(5) the present invention has overcome by exposure, cross to have developed and the structure graph distortion that little mask causes is removed in excessive erosion, can be when keeping the structure graph precision, realize the removal of little mask, operational process of craft is simple, and piezo-quartz element wet etching surface smoothness is significant for improving;
(6) the present invention uses lithography machine to finish the accurate aligning of mask plate and element wafer surfacial pattern, and is easy and simple to handle.
Description of drawings
Fig. 1 is piezo-quartz component structure synoptic diagram of the present invention;
Fig. 2 is element wafer synoptic diagram before the wet etching of the present invention;
Fig. 3 is etching mask plate synoptic diagram of the present invention;
Figure 4 shows that etching mask plate of the present invention aims at synoptic diagram with element wafer;
Fig. 5 is plasma etching Fixture assembly synoptic diagram of the present invention;
Fig. 6 is the little mask etching schema of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Be described in detail as an example of the piezo-quartz element example, be illustrated in figure 1 as the structural representation of piezo-quartz element of the present invention, the piezo-quartz element is comprised of the piece 1 that admittedly props up at thin beam 2 and Bao Liang 2 two ends as seen from the figure, and the thickness of Bao Liang 2 is much smaller than the thickness of other positions.The general preparation method of thin beam 2 is, at first at the two-sided metal lining masking film in quartz wafer surface; Then pass through the dual surface lithography technology with the metal shadowing film pattern, thereby obtain the structure graph of thin beam; Obtain thin beam 2 structures by fluorine-based wet etching corrosion quartz wafer at last.The little mask removing step of the present invention should be positioned at after the metal shadowing film pattern, before the wet etching quartz wafer, by plasma etching quartz is treated that the residual metal of corrosion surface (i.e. corrosion before thin Liang2Chu) and photoresist material etc. remove clean, guarantee the good contact of fluorine-based wet etching liquid and wafer surface, final acquisition surfaceness is low, the thin beam 2 that the peak of profile peak value is little.Piezo-quartz element shown in Figure 1 is the component structure after the wet etching.
Be illustrated in figure 2 as the front element wafer synoptic diagram of wet etching of the present invention, this moment, the metal shadowing film on element wafer 3 surfaces was graphical, two ends (admittedly propping up piece 1 figure) all exist at wafer 3 fronts, the back side, middle (Bao Liang 2 figures) exist only in wafer 3 back sides, therefore the corrosion that is positioned at the thin beam 2 at each figure middle part is single-sided corrosion, and other positions of structure are two-sided penetration corrosion.The positive symmetrical cross figures 4 of wafer 3 be alignment mark, are used for aiming at of realization wafer 3 and etching mask plate 5 alignment windows 7.
Be illustrated in figure 3 as the synoptic diagram of etching mask plate of the present invention, its thickness is about 100～200 μ m, and is surperficial through electrochemical polishing treatment, thereby avoid scratching wafer 3 fronts.Square structure among the figure is through hole, is formed by laser processing, and working accuracy is 0.01mm.9 square holes of middle portion are little mask etching window 6 that element wafer is treated corrosion surface, it is the hollow out figure, all the other 4 square holes are alignment windows 7, convenient realization is aimed at wafer 3 surperficial cross figures 4, etching mask plate 5 can be selected stainless steel plate, quartz wafer or silicon wafer, process the hollow out figure by laser or lithographic technique, adopting stainless steel plate in the present embodiment is etching mask plate 5.
Be illustrated in figure 4 as etching mask plate of the present invention and aim at synoptic diagram with element wafer, in little mask-removal process, the wafer surface that is positioned at little mask etching window 6 inside can be subject to the bombardment of plasma body, and the window outside is blocked partly can not be subject to the effect of plasma body.
Be illustrated in figure 5 as the assembling synoptic diagram of plasma etching anchor clamps.As seen from the figure, the plasma etching anchor clamps are assembled by pressing plate 8, liner plate 9 and trip bolt 10, and element wafer 3 and stainless steel mask plate 5 are clipped in by order among the figure in the middle of pressing plate 8 and the liner plate 9, and each layer structure is finally by trip bolt 10 lockings.Pressing plate 8 is processed by stainless material, has good anti-etching ability, and thickness is about 2～5mm, has good intensity, and with the surface finish that stainless steel plate 5 contacts, roughness is lower than 0.1 μ m, avoids stainless steel plate 5 is scratched.In pressing plate 8, the local hollow out in the position corresponding with the square hole 6 of stainless steel plate 5 guarantees that plasma etch process is not blocked.Liner plate 9 is the fine copper material, has good conduction and the capacity of heat transmission, can guarantee that the electric charge and the heat that accumulate in the etching process in time lead away, thickness is about 3～5mm, has good intensity, the scuffing to element wafer 3 back sides is avoided by polishing the surfaceness that can obtain to be lower than 0.1 μ m in the surface that contacts with element wafer 3.Trip bolt 10 is TMFC, and the through hole that provides with pressing plate 8 and liner plate 9 cooperates, and realizes the locking of each layer structure.
The assembling process of plasma etching anchor clamps be similar to contact photolithography to the version operation, specific as follows:
Behind step 3, the aligning element wafer 3 is contacted with stainless steel plate 5 and adhesive; At last liner plate 9 is contacted with element wafer 3 back sides, trip bolt 10 passes pressing plate 8 and liner plate 9, thereby whole assembling process is finished in each layer locking.
Be illustrated in figure 6 as the little mask of the present invention and remove schema, as shown in the figure, pressing plate 8, stainless steel plate 5, element wafer 3, liner plate 9 and the trip bolt 10 used in the course of processing should be cleaned by the organic solvents such as acetone, alcohol are ultrasonic before the etching, the deionized water ultrasonic cleaning should be passed through for the surface with the element wafer 3 of photoresist material, any organic solvent must not be contacted; Then finish the assembling of plasma etching anchor clamps, detailed process as previously mentioned; Then carry out little mask etching, detailed process is as follows:
After step 3, etching finish the plasma etching anchor clamps are split and element wafer 3 is taken out, wafer 3 can enter the wet etching operation.
The present invention utilizes the stainless steel plate of laser processing to remove little mask on quartz wafer surface as mask layer.By realizing the two aligning at stainless steel plate and the corresponding alignment mark of element wafer processing, alignment procedures and common contact-type photoetching are similar to the version operation.Adopt stainless steel platen, fine copper liner plate and trip bolt to consist of the plasma etching anchor clamps, with stainless steel plate and wafer compacting, avoid occuring between the two the figure dislocation.Little mask is removed the using plasma lithographic technique, and whole little mask etching process is divided into cleaning, version, residual photoresist removal, residual metal were removed for four steps.
The inventive method is to utilize plasma etching technology to remove little mask after metal shadowing film normal photolithography is finished, and the metal shadowing film pattern has still kept the high precision of photoetching; Plasma etching has the ability of multiple materials such as removing metal, organism, and directivity, etch rate and selection are than desirable; The stainless steel plate that utilizes laser processing has good resistance to corrosion as the mask layer of plasma etching, and simultaneously, stainless steel plate can repeatedly reuse, and relative cost is lower; Utilize lithography machine can conveniently realize aiming at of figure on stainless steel mask plate and the wafer, alignment precision is high.
The above; only be the embodiment of the best of the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
The content that is not described in detail in the specification sheets of the present invention belongs to this area professional and technical personnel's known technology.
Claims (9)
1. be used for improving little mask removal method of quartzy corrosion surface smooth finish, it is characterized in that comprising the steps:
Step (one), process the hollow out figure at etching mask plate (5), and etching mask plate (5) and liner plate (9), trip bolt (10), element wafer (3), pressing plate (8) assembled, obtain the plasma etching anchor clamps, concrete assembly method is as follows:
(a), with etching mask plate (5) and pressing plate (8) vacuum engagement;
(b), element wafer (3) is positioned over etching mask plate (5) below, with etching mask plate (5) maintenance certain interval;
(c), with the hollow out figure on the etching mask plate (5) and the upper pattern alignment that carries out little mask removal by the needs that obtain behind the metal shadowing film pattern of element wafer (3);
(d), element wafer (3) is contacted also vacuum engagement with etching mask plate (5);
(e), liner plate (9) is contacted with element wafer (3), trip bolt (10) passes pressing plate (8) and liner plate (9) is locked each layer;
Step (two), the plasma etching anchor clamps microwave oxygen gas plasma stripping machine of packing into is carried out the residual photoresist etching to the figure that needs to carry out little mask on the element wafer (3) and remove, the Ar ion bean etcher of again the plasma etching anchor clamps being packed into afterwards carries out the residual metal etching to the figure that needs to carry out little mask on the element wafer (3) and remove.
2. the little mask removal method be used to improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: described etching mask plate (5) is stainless steel plate, quartz wafer or silicon wafer, processes the hollow out figure by laser or lithographic technique.
3. the little mask removal method be used to improving quartzy corrosion surface smooth finish according to claim 1 and 2, it is characterized in that: the thickness of described etching mask plate (5) is 100～200 μ m.
4. the little mask removal method be used to improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: described pressing plate (8) is stainless steel, and thickness is 2～5mm, and roughness is lower than 0.1 μ m.
5. the little mask removal method be used to improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: described liner plate (9) is copper coin, and thickness is 3～5mm, and roughness is lower than 0.1 μ m.
6. the little mask removal method be used to improving quartzy corrosion surface smooth finish according to claim 1 is characterized in that: element wafer (3) and etching mask plate (5) maintenance 20～30 μ m gaps in the described step (b).
7. the little mask removal method be used to improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: when the microwave oxygen gas plasma stripping machine of in the described step (two) the plasma etching anchor clamps being packed into carries out the residual photoresist etching to the figure that needs to carry out little mask on the element wafer (3) and remove, etching power is 50～300W, and etching time is 0.5～2 minute.
8. the little mask removal method be used to improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: when the Ar ion bean etcher of in the described step (two) the plasma etching anchor clamps being packed into carries out the residual metal etching to the figure that needs to carry out little mask on the element wafer (3) and remove, ion beam current is 30～50mA, plate voltage is 200～500V, and etching time is 0.5～1.5 hour.
9. the little mask removal method be used to improving quartzy corrosion surface smooth finish according to claim 1, it is characterized in that: all have alignment windows on described etching mask plate (5) and the element wafer (3), in the step (c) by microscopic examination, utilize the displacement adjusting device of lithography machine, alignment windows on the etching mask plate (5) is aimed at the alignment windows on the element wafer (3), thereby need to carry out the pattern alignment that little mask is removed on the hollow out figure on the realization etching mask plate (5) and the element wafer (3).
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Cited By (2)
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| CN109686649A (en) * | 2017-10-19 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | Alignment mark cleaning method and semiconductor making method |
| CN115857287A (en) * | 2023-02-20 | 2023-03-28 | 中北大学 | Preparation method of graphene microstructure |
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Cited By (2)
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| CN109686649A (en) * | 2017-10-19 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | Alignment mark cleaning method and semiconductor making method |
| CN115857287A (en) * | 2023-02-20 | 2023-03-28 | 中北大学 | Preparation method of graphene microstructure |
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