CN104743499B - The process of glass substrate - Google Patents
The process of glass substrate Download PDFInfo
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- CN104743499B CN104743499B CN201310742931.4A CN201310742931A CN104743499B CN 104743499 B CN104743499 B CN 104743499B CN 201310742931 A CN201310742931 A CN 201310742931A CN 104743499 B CN104743499 B CN 104743499B
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Abstract
The process of glass substrate that the present invention provides, it comprises the following steps: photoresist deposition step, deposits negative photoresist on glass substrate surface；Photoresist step of exposure, is exposed negative photoresist and develops, to form mask pattern；Mask deposition step, layer deposited isolating and metal level on the glass substrate surface successively and not covered by negative photoresist on negative photoresist surface；Wherein, sealing coat uses anti-anodised material to make；Metal level uses bivalence or trivalent metal material to make；Photoresist removal step, removes negative photoresist and sealing coat thereon and metal level；Mask oxidation step, carries out anodic oxidation to metal level, to form metal oxide layer.The process of the glass substrate that the present invention provides, it can improve the glass substrate etching selection ratio relative to mask.
Description
Technical field
The present invention relates to microelectronics technology, particularly to the process of a kind of glass substrate.
Background technology
At present, in the manufacture process of MEMS, begin to use glass (silicon dioxide) as backing material, this be because of
Compared to silicon substrate, there is higher insulating properties for glass substrate, so that MEMS can be applied at high voltage, high power
Deng insulating properties is required higher field.In each processing procedure manufacturing MEMS, etching technics is as important processing procedure
One of, its main working process is: deposition mask on a glass substrate, and etches figure on mask；Etching glass substrate
The region not hidden by mask on surface, thus on glass substrate surface, etch the figure of needs.
In actual applications, the etching technics of glass substrate usually requires that bigger etching depth, in order to obtain
Preferably etch topography, can have again higher process efficiency, this just to glass substrate relative to the etching selection ratio of mask
And etch rate proposes higher requirement.
The etching technics of existing a kind of glass substrate uses single step lithographic method to perform etching glass substrate, i.e. one
Secondary property completes the etching depth needed for technique.Before performing etching technique, it is necessary first to measure mask thicknesses and pattern, then
Corresponding etching gas and etch process parameters is selected according to mask material.Such as, as shown in table 1, it is photoetching when mask material
During glue, C can be used4F8As main etching gas.
Table 1
By above-mentioned table 1 it can be seen that although above-mentioned single step lithographic method has a higher etch rate, but etching selection
Ratio relatively low (maximum etching selection ratio about about the 30:1 that can reach), thus the work higher to etching depth requirement cannot be met
Skill.
Summary of the invention
It is contemplated that at least solve one of technical problem present in prior art, it is proposed that the work of a kind of glass substrate
Process, it can improve the glass substrate etching selection ratio relative to mask.
The process of a kind of glass substrate is provided for realizing the purpose of the present invention, comprises the following steps:
Photoresist deposition step, deposits negative photoresist on glass substrate surface；
Photoresist step of exposure, is exposed described negative photoresist and develops, to form mask pattern；
Mask deposition step, the glass successively and not covered by described negative photoresist on described negative photoresist surface
Layer deposited isolating and metal level on glass substrate surface；Wherein, described sealing coat uses anti-anodised material to make；Described gold
Belonging to layer uses bivalence or trivalent metal material to make；
Photoresist removal step, removes described negative photoresist and sealing coat thereon and metal level；
Mask oxidation step, carries out anodic oxidation to described metal level, to form metal oxide layer.
Preferably, described bivalence or trivalent metal material include aluminum or magnesium.
Preferably, described anti-anodised material includes chromium or nickel.
Preferably, in described mask deposition step, the span of the thickness of described sealing coat is 10～200nm.
Preferably, in described mask deposition step, the span of the thickness of described metal level is in 1～4 μm.
Preferably, in described mask oxidation step, the span of the thickness of described metal oxide layer is in 4～10 μm.
Preferably, after completing described mask oxidation step, further comprising the steps of:
Glass substrate etch step, is passed through etching gas in reaction chamber, and opens excitation power supply and grid bias power supply, with
The glass substrate not covered by described metal oxide layer is performed etching.
Preferably, described etching gas includes fluorine class or carbon fluorine type gas；Or described etching gas includes main etching gas
Body and auxiliary gas, wherein, described main etching gas includes fluorine class or carbon fluorine type gas；Described auxiliary gas includes argon or hydrogen
Gas.
Preferably, the span of the flow of described etching gas is 10～2000sccm.
Preferably, the span of the flow of described etching gas is 50～500sccm.
Preferably, the span of the exciting power of described excitation power supply output is 100～5000W.
Preferably, the span of the exciting power of described excitation power supply output is 1500～3000W.
Preferably, the span of the substrate bias power of described grid bias power supply output is 50～1000W.
Preferably, the span of the substrate bias power of described grid bias power supply output is 200～700W.
As another kind of technical scheme, the present invention also provides for the process of a kind of glass substrate, and it comprises the following steps:
Mask deposition step, successively layer deposited isolating and metal level on glass substrate surface；Wherein, described sealing coat is adopted
Make of anti-anodised material；Described metal level uses bivalence or trivalent metal material to make；
Photoresist deposition step, positive photo glue on described layer on surface of metal；
Photoresist step of exposure, is exposed described positive photoresist and develops, to form mask pattern；
Mask etching step, etches described sealing coat and metal level using described positive photoresist as mask plate, with by institute
State mask pattern to copy on described sealing coat and metal level；
Photoresist removal step, removes the positive photoresist on described metal level；
Mask oxidation step, carries out anodic oxidation to described metal level, to form metal oxide layer.
The method have the advantages that
The process of the glass substrate that the present invention provides, it is by carrying out sun to the metal level arranged on a glass substrate
Pole aoxidizes, it is possible to obtain scleroid bivalence or the oxide layer of trivalent metal, this oxide layer is covered as etching glass substrate
Film, can improve the etching selection ratio of mask and glass substrate, has bigger etching such that it is able to obtain on a glass substrate
The hole of the degree of depth or groove structure.
Accompanying drawing explanation
The FB(flow block) of the process of a kind of glass substrate that Fig. 1 provides for the present invention；
The etching process schematic diagram of the process of a kind of glass substrate that Fig. 2 provides for the present invention；
The FB(flow block) of the process of the another kind of glass substrate that Fig. 3 provides for the present invention；And
The etching process schematic diagram of the process of the another kind of glass substrate that Fig. 4 provides for the present invention.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, come the present invention below in conjunction with the accompanying drawings
The process of the glass substrate provided is described in detail.
The FB(flow block) of the process of a kind of glass substrate that Fig. 1 provides for the present invention.Fig. 2 provide for the present invention one
Plant the etching process schematic diagram of the process of glass substrate.Seeing also Fig. 1 and Fig. 2, the method comprises the following steps:
Photoresist deposition step, uses the techniques such as magnetron sputtering, evaporation coating or chemical gaseous phase deposition at glass substrate table
Negative photoresist is deposited on face.
Photoresist step of exposure, is exposed negative photoresist and develops, to form mask pattern, i.e. utilize negativity
Photoresist defines figure to be etched on glass substrate surface.
Mask deposition step, the glass substrate table successively and not covered by negative photoresist on negative photoresist surface
Layer deposited isolating and metal level on face.This depositing operation can use the deposition of magnetron sputtering, evaporation or chemical gaseous phase deposition etc.
Method.Wherein, sealing coat uses anti-anodised material to make, such as chromium or nickel, in actual applications, it would however also be possible to employ oxygen
Can generate after change and be prone to by the above-mentioned anti-anodised material of the metal material instead of plasma etching.Metal level uses two
Valency or trivalent metal material make, it is preferred that aluminum or magnesium can be used as metal level.
Photoresist removal step, uses the modes such as stripping to remove negative photoresist and sealing coat thereon and metal level.By
This, it is possible to achieve mask pattern is copied on sealing coat and metal level.
Mask oxidation step, carries out anodic oxidation to metal level, to form scleroid bivalence or trivalent metal oxidation
Layer.Such as, if metal level uses metallic aluminium to make, then Al can be obtained2O3The oxide layer of material.This metal oxide layer is as quarter
The mask of erosion glass substrate, can improve the etching selection ratio of mask and glass substrate, such that it is able to obtain on a glass substrate
There is hole or the groove structure of bigger etching depth.Additionally, by sealing coat, be possible not only to avoid anodic oxidation to glass lined
The impact at the end, and the metal material being also prevented from metal level diffuses to glass substrate.It addition, the thickness of metal oxide layer should be protected
Card before completing the etching depth needed for technique to glass substrate, and metal oxide layer is not totally consumed, it is preferred that metal
The span of the thickness of oxide layer is in 4～10 μm.On the premise of the thickness ensureing this metal oxide layer of acquisition, it is preferably isolated
The span of the thickness of layer is 10～200nm.The span of the thickness of metal level is in 1～4 μm.
Glass substrate etch step, is passed through etching gas in reaction chamber, and opens excitation power supply and grid bias power supply, with
The glass substrate not covered by metal oxide layer is performed etching, thus obtains the glass substrate with required figure.
In glass substrate etch step, etching gas can include fluorine class or carbon fluorine type gas.Or, it is also possible to include
Main etching gas and auxiliary gas, and the accounting that main etching gas is in total gas content compare auxiliary gas bigger.Wherein, main
Etching gas includes fluorine class or carbon fluorine type gas；Auxiliary gas includes argon or hydrogen.
The technological parameter of above-mentioned glass substrate etch step can be: the span of the flow of etching gas 10～
2000sccm；Preferably, it is 50～500sccm.The span of the exciting power of excitation power supply output is 100～5000W；Excellent
Choosing, 1500～3000W.The span of the substrate bias power of grid bias power supply output is 50～1000W；Preferably, 200～
700W。
After completing glass substrate etch step, in addition it is also necessary to remove remain in sealing coat on glass substrate surface (if
Remain metal oxide layer on sealing coat to remove the most in the lump).Minimizing technology can use dry etching or wet etching etc..
It should be noted that in actual applications, the method for etching experiment can be used to be obtained ahead of time and to carve in glass substrate
The time point that in erosion step, metal oxide layer is totally consumed.Specifically, after completing mask oxidation step, it is measured this
The thickness of the metal oxide layer formed after step；(etch period may utilize experience and sets in advance to carry out glass substrate etch step
Fixed), and measure the etch rate of metal oxide layer；Etch period according to this etch rate He this etch step calculates metal
The thickness that oxide layer consumes in this etch step；Calculate the difference of this consumption thickness and original thickness, and judge this difference
Whether beyond predetermined threshold value, the most then may determine that metal oxide layer is totally consumed, and carve as single using this etch period
The etch period of erosion step；If it is not, then increase suitable etch period to continue etching, until this difference is in predetermined threshold value.
Also, it should be noted in actual applications, in mask oxidation step, anodised technological parameter is permissible
For: if metal level uses metallic aluminum material, then can use sulfuric acid oxidation aluminum metal layer.Preferably, the value of the concentration of sulphuric acid
Scope is 165～240g/l；The span of the temperature of sulphuric acid is at 15～25 DEG C.It addition, aluminum ions content can control
Within 27g/l, it is preferred that control in the range of 5～15g/l.
As another technical scheme, present invention also offers the process of another kind of glass substrate.Fig. 3 is the present invention
The FB(flow block) of the process of the another kind of glass substrate provided.The work of the another kind of glass substrate that Fig. 4 provides for the present invention
The etching process schematic diagram of process.See also the work of Fig. 3 and Fig. 4, this process and the first glass substrate above-mentioned
Process is compared, and carries out anodic oxidation again by the metal level arranged on a glass substrate, scleroid to obtain
Bivalence or the oxide layer of trivalent metal, and be only, at definition mask figure, sequentially there is difference.
Specifically, this process comprises the following steps:
Mask deposition step, successively layer deposited isolating and metal level on glass substrate surface；Wherein, sealing coat uses anti-
Anodised material makes；Metal level uses bivalence or trivalent metal material to make.
Photoresist deposition step, positive photo glue on layer on surface of metal.
Photoresist step of exposure, is exposed positive photoresist and develops, to form mask pattern.Easy to understand, should
The mask pattern contrast that mask pattern is formed with the negative photoresist in the process of the first glass substrate above-mentioned.
Mask etching step, using positive photoresist as mask plate etching sealing coat and metal level, so that mask pattern is multiple
Make on sealing coat and metal level.Lithographic method can use dry etching or wet etching etc..
Photoresist removal step, uses the modes such as stripping to remove the positive photoresist on metal level；
Mask oxidation step, carries out anodic oxidation to metal level, to form metal oxide layer.
Glass substrate etch step, is passed through etching gas in reaction chamber, and opens excitation power supply and grid bias power supply, with
The glass substrate not covered by metal oxide layer is performed etching, thus obtains the glass substrate with required figure.
After completing glass substrate etch step, in addition it is also necessary to remove remain in sealing coat on glass substrate surface (if
Remain metal oxide layer on sealing coat to remove the most in the lump).Minimizing technology can use dry etching or wet etching etc..
Owing to above-mentioned mask oxidation step and glass substrate etch step are in the process of the first glass substrate above-mentioned
In there has been detailed description, do not repeat them here.
In sum, the process of the glass substrate that the present invention provides, it is by the gold arranged on a glass substrate
Belonging to layer and carry out anodic oxidation, it is possible to obtain scleroid bivalence or the oxide layer of trivalent metal, this oxide layer is as etching glass
The mask of glass substrate, can improve the etching selection ratio of mask and glass substrate, has such that it is able to obtain on a glass substrate
The hole of bigger etching depth or groove structure.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and the exemplary enforcement that uses
Mode, but the invention is not limited in this.For those skilled in the art, in the essence without departing from the present invention
In the case of god and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (14)
1. the process of a glass substrate, it is characterised in that comprise the following steps:
Photoresist deposition step, deposits negative photoresist on glass substrate surface；
Photoresist step of exposure, is exposed described negative photoresist and develops, to form mask pattern；
Mask deposition step, the glass lined successively and not covered by described negative photoresist on described negative photoresist surface
Layer deposited isolating and metal level on basal surface；Wherein, described sealing coat uses anti-anodised material to make；Described metal level
Using bivalence or trivalent metal material to make, described bivalence or trivalent metal material include aluminum or magnesium；
Photoresist removal step, removes described negative photoresist and sealing coat thereon and metal level；
Mask oxidation step, carries out anodic oxidation to described metal level, to form metal oxide layer.
2. the process of glass substrate as claimed in claim 1, it is characterised in that described anti-anodised material includes
Chromium or nickel.
3. the process of glass substrate as claimed in claim 1, it is characterised in that in described mask deposition step, institute
State the span of thickness of sealing coat 10～200nm.
4. the process of glass substrate as claimed in claim 1, it is characterised in that in described mask deposition step, institute
State the span of thickness of metal level in 1～4 μm.
5. the process of glass substrate as claimed in claim 1, it is characterised in that in described mask oxidation step, institute
State the span of thickness of metal oxide layer in 4～10 μm.
6. the process of glass substrate as claimed in claim 1, it is characterised in that complete described mask oxidation step it
After, further comprising the steps of:
Glass substrate etch step, is passed through etching gas in reaction chamber, and opens excitation power supply and grid bias power supply, with to not
The glass substrate covered by described metal oxide layer performs etching.
7. the process of glass substrate as claimed in claim 6, it is characterised in that described etching gas includes fluorine class or carbon
Fluorine type gas；Or
Described etching gas includes main etching gas and auxiliary gas, and wherein, described main etching gas includes fluorine class or carbon fluorine class
Gas；Described auxiliary gas includes argon or hydrogen.
8. the process of glass substrate as claimed in claim 6, it is characterised in that the value of the flow of described etching gas
Scope is 10～2000sccm.
9. the process of glass substrate as claimed in claim 8, it is characterised in that the value of the flow of described etching gas
Scope is 50～500sccm.
10. the process of glass substrate as claimed in claim 6, it is characterised in that the excitation of described excitation power supply output
The span of power is 100～5000W.
The process of 11. glass substrate as claimed in claim 10, it is characterised in that the excitation of described excitation power supply output
The span of power is 1500～3000W.
The process of 12. glass substrate as claimed in claim 6, it is characterised in that the bias of described grid bias power supply output
The span of power is 50～1000W.
The process of 13. glass substrate as claimed in claim 12, it is characterised in that the bias of described grid bias power supply output
The span of power is 200～700W.
The process of 14. 1 kinds of glass substrate, it is characterised in that comprise the following steps:
Mask deposition step, successively layer deposited isolating and metal level on glass substrate surface；Wherein, described sealing coat uses anti-
Anodised material makes；Described metal level uses bivalence or trivalent metal material to make, described bivalence or trivalent metal material
Material includes aluminum or magnesium；
Photoresist deposition step, positive photo glue on described layer on surface of metal；
Photoresist step of exposure, is exposed described positive photoresist and develops, to form mask pattern；
Mask etching step, etches described sealing coat and metal level using described positive photoresist as mask plate, to cover described
Film pattern copies on described sealing coat and metal level；
Photoresist removal step, removes the positive photoresist on described metal level；
Mask oxidation step, carries out anodic oxidation to described metal level, to form metal oxide layer.
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| CN106754247A (en) * | 2016-12-12 | 2017-05-31 | 中国科学院微电子研究所 | A kind of pallet and its processing technology |
| CN107144898A (en) * | 2017-06-29 | 2017-09-08 | 中国建筑材料科学研究总院 | Optics regulation and control electromagnetic shielding glass and preparation method thereof |
| CN111968910A (en) * | 2020-08-26 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Processing method of substrate in chip fan-out packaging structure |
| CN112289924B (en) * | 2020-11-05 | 2022-07-22 | 歌尔微电子有限公司 | Method for manufacturing magnetic sensor |
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|---|---|---|---|---|
| CN101675504A (en) * | 2007-09-21 | 2010-03-17 | Lg化学株式会社 | Method for etching glass or metal substrates using negative photoresist and method for fabricating cliche using the same |
| EP2320281A2 (en) * | 2009-11-10 | 2011-05-11 | Cartier Création Studio S.A. | Method for manufacturing micromechanical parts |
| CN102323716A (en) * | 2011-07-07 | 2012-01-18 | 西北工业大学 | Method for transferring and manufacturing pattern with nanometer structure |
| CN103265179A (en) * | 2013-05-27 | 2013-08-28 | 苏州扬清芯片科技有限公司 | Manufacture method of glass micro-channel |
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| JP2003229048A (en) * | 2002-02-01 | 2003-08-15 | Nishiyama Stainless Chem Kk | Manufacturing method for pdp glass substrate and pdp |
| JP5189666B2 (en) * | 2011-04-01 | 2013-04-24 | 株式会社アルバック | Etching method of glass substrate |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101675504A (en) * | 2007-09-21 | 2010-03-17 | Lg化学株式会社 | Method for etching glass or metal substrates using negative photoresist and method for fabricating cliche using the same |
| EP2320281A2 (en) * | 2009-11-10 | 2011-05-11 | Cartier Création Studio S.A. | Method for manufacturing micromechanical parts |
| CN102323716A (en) * | 2011-07-07 | 2012-01-18 | 西北工业大学 | Method for transferring and manufacturing pattern with nanometer structure |
| CN103265179A (en) * | 2013-05-27 | 2013-08-28 | 苏州扬清芯片科技有限公司 | Manufacture method of glass micro-channel |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |