CN106558466A - A kind of preparation method of monocrystalline lanthanum hexaboride field emitter arrays - Google Patents
A kind of preparation method of monocrystalline lanthanum hexaboride field emitter arrays Download PDFInfo
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- CN106558466A CN106558466A CN201611114913.1A CN201611114913A CN106558466A CN 106558466 A CN106558466 A CN 106558466A CN 201611114913 A CN201611114913 A CN 201611114913A CN 106558466 A CN106558466 A CN 106558466A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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Abstract
The invention discloses a kind of preparation method of monocrystalline lanthanum hexaboride field emitter arrays, belongs to cathodic field lift-off technology field.The present invention etches to form monocrystalline lanthanum hexaboride field emitter arrays using nanosecond pulse electrochemical corrosive process, by adjusting processing pulse current parameter and etch period, so that the polarization overpotential in monocrystalline lanthanum hexaboride substrate processing district and non-processing area produces marked difference, the dispersion corrosion in pointed cone array etching process is carried out so as to effectively overcome electrochemical corrosive process, improve the uniformity of pointed cone array cathode, and then improve negative electrode field emission performance, so that monocrystalline lanthanum hexaboride field emitter array negative electrode as electron source in travelling-wave tube, the field such as the microwave devices such as klystron and large-scale dynamic vacuum equipment has the prospect of wide application.
Description
Technical field
The invention belongs to cathodic field lift-off technology field, and in particular to a kind of monocrystalline lanthanum hexaboride field emitter arrays
Preparation method.
Background technology
As field emission arrays (Field emissionarrays) are with instantaneous starting, working and room temperature, transmitting
The series of advantages such as electric current density is big, has preferable application prospect in many fields.A variety of applied environments, cause to send out to field
Penetrating negative electrode has each special requirement in itself, but is even directed to various totally different application scenarios, and the transmitting of negative electrode is stable
Property is that a device itself can normally run indispensable basic guarantee all the time.
Root is it was found that pointed cone field-emissive cathode Current Main Problems Existing is：Emission is low with current emission not
It is stable.According to experiment and analysis draw array cathode overall current density the reason for not high be not all of negative electrode pointed cone all
Participate in transmitting.Trace it to its cause as follows：In negative electrode manufacturing process, the grid hole array caused due to Micrometer-Nanometer Processing Technology reason compared with
Little inhomogeneities can cause more significantly to launch the difference between pointed cone individuality, and from the point of view of the principle that pointed cone is formed, it
The difference of shape can also be inevitable.The difference of transmitting pointed cone geometry can cause the difference of their surface fields, and root
According to the principle of field emission：
(F-N formula during T=0K)
The change of emission J that transmitting electric field intensity E difference causes is fairly obvious.In cathode test process
In, in array partial shape preferably, the less pointed cone of tip curvature radius can reach electric field threshold value prior to other pointed cones, produce field
Cause transmitting, and step up grid voltage expect all pointed cones all launch and during obtaining larger emission current, this
A little pointed cones often can be burnt as local current densities height causes overheated again.The heat waste of this local is ruined and is caused
The fusing of part of grid pole, What is more can cause interelectrode electric discharge, cause the failure of whole array cathode.So, solve electricity
The problem of sub- emission uniformity has become the key that field emission array moves towards practical.So, how to improve pointed cone array equal
Even property, and then the emission level of negative electrode is improved, become technical problem to be solved in research.
Tests prove that, monocrystalline lanthanum hexaboride (LaB6) with high-melting-point, high conductivity and good heat stability, chemistry
Stability, low work function and active cathode surface, therefore, monocrystalline lanthanum hexaboride (LaB6) it is a kind of ideal Flied emission
Cathode material.Single crystal La B6The preparation technology of pointed cone field emitter arrays mainly includes following step：Protective layer it is heavy
Product, the patterning of protective layer and LaB6Pointed cone array is etched.Wherein, LaB6Pointed cone array etching is to be most difficult in whole technique, most close
The step of key.Single crystal La B6The lithographic method of pointed cone array includes：Wet etching, oxygen plasma oxidation and argon plasma soma
The techniques such as method etching oxidation layer combines, oxygen plasma oxidation is combined with hydrochloric acid wet etching oxide layer, electrochemical corrosion.
Wherein, in wet etching, corrosive liquid easily causes to damage to mask, causes pointed cone pattern to change；Oxygen plasma is aoxidized and argon
Corrosion can be produced to mask material in the method that plasma dry etch oxide layer combines, cause mask material to take off in advance
Fall；The process cycle that oxygen plasma oxidation is combined with hydrochloric acid wet etching oxide layer is long, easily causes pointed cone Array Uniformity
Reduce.Electrochemical corrosive process is widely used LaB6Pointed cone array etching technics, traditional handicraft are rotten using direct current electrochemistry
Erosion, to LaB6Substrate is performed etching, process is simple and pointed cone pattern is more intact, but due to the dispersion corrosion of electrochemical reaction
Phenomenon, causes the locality of its processing poor.Therefore, in the etching process that pointed cone array is carried out using electrochemical corrosive process
Uniformity to improve pointed cone array is accomplished by the localization sex chromosome mosaicism for solving pointed cone array etching.
The content of the invention
The technical problem to be solved is to overcome above-mentioned technical problem, there is provided a kind of monocrystalline lanthanum hexaboride field
The preparation method of emission array cathode, specifically includes monocrystalline lanthanum hexaboride substrate pretreatment, the deposition of protective layer, the figure of protective layer
Case and monocrystalline lanthanum hexaboride pointed cone array etching, the preparation method can effectively reduce dispersion corrosion, improve the localization of etching
Property, the monocrystalline lanthanum hexaboride field emitter arrays good so as to obtain pointed cone Array Uniformity.
For achieving the above object, the present invention is employed the following technical solutions：
A kind of preparation method of monocrystalline lanthanum hexaboride field emission cathode array, it is characterised in that comprise the following steps：
Step A：Clean up after monocrystalline hexaboride substrate is ground polishing；
Step B：In deposition on substrate protective layer obtained by Jing processing of step A, and the protection is caused by photoetching and etching
Required figure is formed on layer；
Step C：Monocrystalline lanthanum hexaboride substrate obtained in step B and graphite rod are immersed in electrolyte, then by the list
Brilliant lanthanum hexaboride is connected with positive source, and graphite rod is connected with power cathode, performs etching to be formed using applying pulse electric current
Monocrystalline lanthanum hexaboride pointed cone array；Remaining protective layer on the monocrystalline lanthanum hexaboride pointed cone array is removed, it is final that list is obtained
Brilliant lanthanum hexaboride field emission cathode array.
According to embodiments of the present invention, step A of the present invention is specially carries out RCA is adopted after rubbing down by monocrystalline lanthanum hexaboride substrate
Cleaning, the RCA cleanings are will be substrate successively deionized water, dehydrated alcohol, acetone, dehydrated alcohol, SC-1 clear
Lotion and SC-2 abluents are cleaned by ultrasonic, and are cleaned up using deionized water after every kind of reagent cleaning；
Specifically, the chemical composition of the SC-1 abluents is NH4OH、H2O2And H2O, its volume proportion are NH4OH∶H2O2
∶H2O=1: 1: 5；The chemical composition of the SC-2 abluents is HCl, H2O2And H2O, its volume proportion are HCl: H2O2∶H2O=1
∶1∶6。
Preferably, in step B of the present invention, protective layer material is SiNx。
Specifically, so that the concrete operations that protective layer forms required figure are in step B of the present invention：
B1：Spin coating；Under the conditions of lucifuge, one layer of photoresist is uniformly coated on above-mentioned monocrystalline hexaboride substrate；
B2：Exposure；Substrate is carried out into soft baking process, then mask plate is covered in six boronation of monocrystalline for being coated with photoresist
On lanthanio piece, monocrystalline lanthanum hexaboride substrate is fully irradiated using ultraviolet light and is exposed process；
B3：Development；Monocrystalline lanthanum hexaboride substrate after exposure is developed with developer solution, then by the list of abundant development
Brilliant lanthanum hexaboride substrate carries out firmly treatment；
B4：Etching；Removal redundant protection layer is performed etching using reactive ion etching method, surface is obtained and be there is required figure
Monocrystalline lanthanum hexaboride substrate；
B5：Remove photoresist；The monocrystalline lanthanum hexaboride substrate of protection pattern layers is put in reagent and is cleaned, remove skim-coat
Photoresist.
Preferably, in step B, the technological parameter of reactive ion etching method is as follows：Etching gas are
SF6, gas flow is 30sccm, and etching power is 40～60W, and etch period is 5～10 minutes.
Further, remaining mask is removed using hydrofluoric acid solution specifically in step C of the present invention.
Further, in step C of the present invention, the chemical composition of electrolyte is H3PO4、C2H5OH and H2O, it is preferable that wherein each
The volume ratio of composition is H3PO4∶C2H5OH∶H2O=1: 8～12: 8～12, wherein when the volume ratio of each composition is H3PO4∶C2H5OH
∶H2Be optimal at O=1: 10: 10.
Further, the pulsewidth of pulse current described in step C of the present invention is preferably 5ns～100ns, and dutycycle is preferably
1: 9～12, pulse voltage is preferably 3.5V～4V.
The present invention combines Micrometer-Nanometer Processing Technology on original the anodic etching method Process ba- sis, using nanosecond pulse electrification
Learn etching process to etch to form monocrystalline lanthanum hexaboride field emitter arrays.The substrate and emitter of field emitter arrays is adopted
With monocrystalline lanthanum hexaboride (LaB6) material, the use of the material effectively reduces the cut-in voltage needed for field emitter arrays,
Compare now cathode emission current density and launch stability are substantially increased with material；What is more important, takes nanosecond pulse
Electrochemical corrosive process is performed etching to lanthanum hexaboride substrate, by adjusting processing pulse current parameter and etch period so that
, higher than decomposition electric potential, electric current density is big, this area for monocrystalline lanthanum hexaboride substrate region not covered by the protective layer (processing district) overpotential
The electrochemistry ablation amount of domain monocrystalline lanthanum hexaboride material is big；The region of the protective mulch of monocrystalline lanthanum hexaboride material is (non-processing
Area), less than decomposition electric potential, electric current density is little, and this zone monocrystalline lanthanum hexaboride material hardly occurs electrochemical reaction for overpotential,
So as to significantly increase localization ablation ability, reducing affects the dispersion corrosion of machining accuracy, realizes micron-sized Electrolyzed Processing.
Compared to existing technology, the present invention has the advantages that：
The present invention is by causing monocrystalline lanthanum hexaboride substrate processing district and non-processing area using nanosecond pulse electrochemical corrosion
Polarization overpotential produce marked difference, so as to effectively reduce the dispersion corrosion in pointed cone array etching process, improve
The uniformity of pointed cone array cathode, the negative electrode field emission performance produced are improved and improve so that monocrystalline lanthanum hexaboride
Field emitter array negative electrode is as electron source in the field such as the microwave devices such as travelling-wave tube, klystron and large-scale dynamic vacuum equipment
Prospect with wide application.
Description of the drawings
Fig. 1 is the embodiment of the present invention in monocrystalline lanthanum hexaboride (LaB6) substrate surface deposited silicon nitride SiNxProtective layer shows
It is intended to；
Fig. 2 is the embodiment of the present invention in silicon nitride (SiNx) protective layer coat photoresist schematic diagram；
Fig. 3 is the embodiment of the present invention to coating the silicon nitride (SiN of photoresistx) protective layer ultraviolet photoetching schematic diagram；
Fig. 4 is the embodiment of the present invention to silicon nitride (SiNx) protective layer development after schematic diagram；
Fig. 5 is the embodiment of the present invention to silicon nitride (SiNx) protective layer etched and gone using reactive ion etching method (RIE)
Except the schematic diagram after photoresist；
Fig. 6 is the embodiment of the present invention using the schematic diagram after nanosecond pulse electrochemical etching；
Fig. 7 is that the embodiment of the present invention will etch the schematic diagram at the top of the cone-shaped emitter of gained after remaining mask removal；
Fig. 8 is monocrystalline lanthanum hexaboride (LaB obtained by the embodiment of the present invention6) field emission body geometry schematic diagram；
Fig. 9 is monocrystalline lanthanum hexaboride (LaB obtained by the embodiment of the present invention6) field emitter arrays structural representation.
Specific embodiment
Below in conjunction with Figure of description and specific embodiment, the present invention is described in detail：
The present invention provides a kind of preparation method of monocrystalline lanthanum hexaboride field emission cathode array, specifically includes six boronation of monocrystalline
Lanthanio piece pretreatment, the deposition of protective layer, the patterning of protective layer and monocrystalline lanthanum hexaboride pointed cone array etching, due to by electricity
Chemical etching technology etches electrochemical parameter during forming monocrystalline lanthanum hexaboride pointed cone array and directly decides etching pointed cone
Pattern, and then the field emission performance of array cathode is determined, therefore the present invention adjusts processing from suitable processing pulse parameter
The polarization overpotential in area and non-processing area makes both produce marked difference, so as to reach control monocrystalline lanthanum hexaboride material in difference
The dissolving ablation amount in region, and then reduce the dispersion corrosion for affecting machining accuracy.
Embodiment：
A kind of preparation method of monocrystalline lanthanum hexaboride field emission cathode array, comprises the following steps：
Step A：Monocrystalline hexaboride substrate pretreatment；
The micropowders such as the carborundum for adopting suitable particle size of the invention, magnesium oxide, silicon dioxide, aluminium oxide are to monocrystalline lanthanum hexaboride
Substrate carries out abrasive disc to remove surface mechanical damage layer, then is processed by shot blasting symbol is obtained using aluminium oxide or hydrogen peroxide
That closes requirement of experiment does flatness, best bright finish substrate surface；Monocrystalline lanthanum hexaboride substrate after rubbing down is processed is cleaned
To remove molecule-type, ion-type and atomic impurity；The RCA cleanings that the present embodiment is commonly used using semiconductor fabrication process,
It is specific as follows：Deionized water, dehydrated alcohol, acetone, dehydrated alcohol, No. 1 standard cleaning liquid (SC-1 cleanout fluid) and No. 2 successively
Standard cleaning liquid (SC-2 cleanout fluid) is cleaned by ultrasonic, and is cleaned up using deionized water after every kind of reagent cleaning.Wherein, SC-1
The chemical composition of cleanout fluid is NH4OH、H2O2And H2O, the volume ratio of this three is NH4OH∶H2O2∶H2O=1: 1: 5～1: 2: 7；
The chemical composition of SC-2 cleanout fluid is HCl, H2O2And H2O, its volume proportion are HCl: H2O2∶H2O=1: 1: 6～1: 2: 8；This reality
Apply example stoicheiometry is adopted for NH4OH∶H2O2∶H2O=1: 1: 5 SC-1 cleanout fluid and stoicheiometry are HCl: H2O2∶H2O=1:
1: 6 SC-2 cleanout fluid；The concrete cleaning method that this enforcement is adopted for：Monocrystalline lanthanum hexaboride substrate is put in deionized water and is surpassed
Sound is cleaned 10 minutes, is repeated 5 times, is cleaned up using deionization；It is cleaned by ultrasonic 10 minutes in being put into dehydrated alcohol liquid, uses
Deionization is cleaned up；It is cleaned by ultrasonic 20 minutes in being put into acetone liquid, is cleaned up using deionization, be put into anhydrous alcohol solution
It is cleaned by ultrasonic 10 minutes in body, is put into after being cleaned up using deionization in SC-1 cleanout fluid, is heated to 80 DEG C and is cleaned by ultrasonic 15
Minute, be put into after being cleaned up using deionization in SC-2 cleanout fluid, after being heated to 80 DEG C ultrasound 15 minutes, be finally putting into from
It is cleaned by ultrasonic 15 minutes in sub- water, is repeated 5 times；
Step B：Deposition protective layer and protection pattern layers；
As shown in figure 1, the present embodiment adopt radio-frequency magnetron sputter method substrate surface deposit a layer thickness for 500nm nitrogen
SiClx (SiNx) thin film is used as monocrystalline lanthanum hexaboride (LaB6) the required protective layer of emitter etching；
The present embodiment has silicon nitride (SiN in deposition using ordinary photolithographic process and etching technicsx) thin film six boron of monocrystalline
Change lanthanum (LaB6) substrate carries out protective layer patterned process, concrete steps are followed successively by：
B1：Spin coating；Under the conditions of lucifuge, the uniform coating one on above-mentioned monocrystalline hexaboride substrate using spin coating method
Layer photoresist, the wherein rotating speed of glue evenning table are 3000rpm, and spin coating time is 30 seconds, structural representation such as Fig. 2 institutes of gained sample
Show；
B2：Exposure；Substrate is carried out into soft baking process, then mask plate is covered in six boronation of monocrystalline for being coated with photoresist
On lanthanio piece, monocrystalline lanthanum hexaboride substrate is fully irradiated using ultraviolet light and is exposed process, the present embodiment time of exposure is 90
Second, the structural representation of gained sample is as shown in Figure 3；
B3：Development；Monocrystalline lanthanum hexaboride substrate after exposure is developed with 4% tetramethyl oxyammonia solution,
The situation of change of substrate surface photoresist is examined, the photoresist of exposure area is basic when this enforcement developing time is 30 seconds
It is removed, then the monocrystalline lanthanum hexaboride substrate deionized water of abundant development is rinsed repeatedly, is put into after being dried up using nitrogen
10 minutes are toasted in 100 DEG C of baking ovens to realize firmly treatment, the structural representation of gained sample is as shown in Figure 4；
B4：Etching；Removal redundant protection layer is performed etching using reactive ion etching method, because SF6To six boronation of monocrystalline
Lanthanum does not have obvious corrasion, therefore the present embodiment adopts SF6Used as etching gas, and adjusting gas flow is 30sccm,
Etching power is 50W, and etch period is 8 minutes, and according to testing, etching effect under this technological parameter is good；
B5：Remove photoresist；The monocrystalline lanthanum hexaboride substrate of protection pattern layers is put in acetone soln and is cleaned by ultrasonic 3
Minute, skim-coat photoresist is removed, the structural representation of gained sample is as shown in Figure 5；
Step C：Monocrystalline lanthanum hexaboride pointed cone array is etched；
Monocrystalline lanthanum hexaboride substrate obtained in step B is cleaned, nanosecond pulse electrochemical etching dress is then placed into
Process is performed etching in putting, wherein, above-mentioned monocrystalline lanthanum hexaboride substrate is connected with positive source as anode, graphite rod connection electricity
Source negative pole does negative electrode, and in nanosecond pulse electro chemical etching apparatus, electrolyte is H3PO4Aqueous solution, and ethanol is added as buffer agent
To slow down reaction rate, each component volume ratio is preferably 1: 1: 10；Open the nanometer pulse power, regulations pulse voltage be 4V, arteries and veins
It is 40ns to rush width, and dutycycle is 1: 10, and etching formed the truncated cone-shaped monocrystalline lanthanum hexaboride transmitting that height is 2.5 μm after 3 hours
Body, the structural representation of gained sample as shown in fig. 6, remaining protective layer on the monocrystalline lanthanum hexaboride emitter is removed,
Monocrystalline lanthanum hexaboride field emission cathode array is obtained finally, the structural representation of gained sample is as shown in Figure 7.
The geometry schematic diagram that the embodiment of the present invention is obtained monocrystalline lanthanum hexaboride field emission body is illustrated in figure 8, its category
Spindt type structures, its geometry generally can represent with a cone that top is approximately a ball tangent with cone, ball
Body radius of curvature very little, mostly nanometer scale；It is illustrated in figure 9 monocrystalline lanthanum hexaboride (LaB obtained by the embodiment of the present invention6) field
Penetrate the structural representation of array cathode.
Embodiment described above only expresses embodiments of the present invention, and its description is more concrete and detailed, but can not
Therefore it is interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art,
Without departing from the inventive concept of the premise, some deformations and improvement can also be made, these belong to the protection model of the present invention
Enclose.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (9)
1. a kind of preparation method of monocrystalline lanthanum hexaboride field emission cathode array, it is characterised in that comprise the following steps：
Step A：Clean up after monocrystalline hexaboride substrate is ground polishing；
Step B：In monocrystalline hexaboride deposition on substrate protective layer obtained by Jing processing of step A, and caused by photoetching and etching
Required figure is formed on the protective layer；
Step C：The monocrystalline lanthanum hexaboride substrate of surface protection pattern layers and graphite rod are immersed in electrolyte, then by monocrystalline
Lanthanum hexaboride substrate is connected with positive source, and graphite rod is connected with power cathode, performs etching shape using applying pulse electric current
Into monocrystalline lanthanum hexaboride pointed cone array, remaining protective layer on the monocrystalline lanthanum hexaboride pointed cone array is removed, it is final to be obtained
Monocrystalline lanthanum hexaboride field emission cathode array.
2. the preparation method of a kind of monocrystalline lanthanum hexaboride field emission cathode array according to claim 1, it is characterised in that
Step A is specially carries out monocrystalline lanthanum hexaboride substrate using RCA cleanings after rubbing down, and the RCA cleanings are by base
Deionized water, dehydrated alcohol, acetone, dehydrated alcohol, SC-1 abluents and SC-2 abluents are cleaned by ultrasonic piece successively, often
Cleaned up using deionized water after planting reagent cleaning.
3. the preparation method of a kind of monocrystalline lanthanum hexaboride field emission cathode array according to claim 2, it is characterised in that
The chemical composition of the SC-1 abluents is NH4OH、H2O2And H2O, its volume proportion are NH4OH∶H2O2∶H2O=1: 1: 5；It is described
The chemical composition of SC-2 abluents is HCl, H2O2And H2O, its volume proportion are HCl: H2O2∶H2O=1: 1: 6.
4. the preparation method of a kind of monocrystalline lanthanum hexaboride field emission cathode array according to claim 1, it is characterised in that
In step B, protective layer material is SiNx。
5. the preparation method of a kind of monocrystalline lanthanum hexaboride field emission cathode array according to claim 4, it is characterised in that
So that the concrete operations that protective layer forms required figure are in step B：
B1：Spin coating；Under the conditions of lucifuge, one layer of photoresist is uniformly coated on above-mentioned monocrystalline hexaboride substrate；
B2：Exposure；Substrate is carried out into soft baking process, then mask plate is covered in the monocrystalline lanthanum hexaboride base for being coated with photoresist
On piece, monocrystalline lanthanum hexaboride substrate is fully irradiated using ultraviolet light and is exposed process；
B3：Development；Monocrystalline lanthanum hexaboride substrate after exposure is developed with developer solution, then by the monocrystalline six of abundant development
Lanthanum boride substrate carries out firmly treatment；
B4：Etching；Removal redundant protection layer is performed etching using reactive ion etching method, the list that surface has required figure is obtained
Brilliant lanthanum hexaboride substrate；
B5：Remove photoresist；The monocrystalline lanthanum hexaboride substrate of protection pattern layers is put in reagent and is cleaned, go skim-coat photoetching
Glue.
6. the preparation method of a kind of monocrystalline lanthanum hexaboride field emission cathode array according to claim 5, it is characterised in that
The technological parameter of reactive ion etching method is as follows：Etching gas are SF6, gas flow is 30sccm, etching power be 40～
60W, etch period are 5～10 minutes.
7. the preparation method of a kind of monocrystalline lanthanum hexaboride field emission cathode array according to claim 1, it is characterised in that
Step C specifically removes remaining mask using hydrofluoric acid solution.
8. the preparation method of a kind of monocrystalline lanthanum hexaboride field emission cathode array according to any one of claim 1 to 7, its
It is characterised by, in step C, the chemical composition of electrolyte is H3PO4、C2H5OH and H2O, wherein the volume ratio of each composition is H3PO4∶
C2H5OH∶H2O=1: 8～12: 8～12.
9. the preparation method of a kind of monocrystalline lanthanum hexaboride field emission cathode array according to claim 8, it is characterised in that
The pulsewidth of the pulse current is 5ns～100ns, and dutycycle is 1: 9～12, and pulse voltage is 3.5V～4V.
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| CN110808198A (en) * | 2019-11-19 | 2020-02-18 | 中国航空制造技术研究院 | Processing method of rare earth hexaboride field emission pointed cone array |
| CN112103155A (en) * | 2020-09-22 | 2020-12-18 | 成都创元电子有限公司 | Electron bombardment type lanthanum hexaboride cathode |
| CN112103155B (en) * | 2020-09-22 | 2023-11-21 | 成都创元电子有限公司 | Electron bombardment type lanthanum hexaboride cathode |
| CN112447467A (en) * | 2020-10-28 | 2021-03-05 | 湖南稀土金属材料研究院 | LaB6Preparation method and application of field emission array film cathode |
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