EP2302667A4 - INSULATING FILM FOR SEMICONDUCTOR DEVICE, METHOD AND APPARATUS FOR MANUFACTURING INSULATING FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Google Patents

INSULATING FILM FOR SEMICONDUCTOR DEVICE, METHOD AND APPARATUS FOR MANUFACTURING INSULATING FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Info

Publication number
EP2302667A4
EP2302667A4 EP09773393.5A EP09773393A EP2302667A4 EP 2302667 A4 EP2302667 A4 EP 2302667A4 EP 09773393 A EP09773393 A EP 09773393A EP 2302667 A4 EP2302667 A4 EP 2302667A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
insulating film
producing
semiconductor
producing insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09773393.5A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2302667A1 (en
Inventor
Hidetaka Kafuku
Toshihito Fujiwara
Toshihiko Nishimori
Tadashi Shimazu
Naoki Yasuda
Hideharu Nobutoki
Teruhiko Kumada
Takuya Kamiyama
Tetsuya Yamamoto
Shinya Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Electric Corp
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Electric Corp
Publication of EP2302667A1 publication Critical patent/EP2302667A1/en
Publication of EP2302667A4 publication Critical patent/EP2302667A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
EP09773393.5A 2008-06-30 2009-06-25 INSULATING FILM FOR SEMICONDUCTOR DEVICE, METHOD AND APPARATUS FOR MANUFACTURING INSULATING FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Withdrawn EP2302667A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008169847A JP5330747B2 (ja) 2008-06-30 2008-06-30 半導体装置用絶縁膜、半導体装置用絶縁膜の製造方法及び製造装置、半導体装置及びその製造方法
PCT/JP2009/061659 WO2010001815A1 (ja) 2008-06-30 2009-06-25 半導体装置用絶縁膜、半導体装置用絶縁膜の製造方法及び製造装置、半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
EP2302667A1 EP2302667A1 (en) 2011-03-30
EP2302667A4 true EP2302667A4 (en) 2014-06-25

Family

ID=41465912

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09773393.5A Withdrawn EP2302667A4 (en) 2008-06-30 2009-06-25 INSULATING FILM FOR SEMICONDUCTOR DEVICE, METHOD AND APPARATUS FOR MANUFACTURING INSULATING FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Country Status (6)

Country Link
US (1) US8288294B2 (ko)
EP (1) EP2302667A4 (ko)
JP (1) JP5330747B2 (ko)
KR (1) KR101181691B1 (ko)
TW (1) TWI398924B (ko)
WO (1) WO2010001815A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5260586B2 (ja) * 2010-03-12 2013-08-14 三菱重工業株式会社 半導体装置用絶縁膜の製造方法、半導体装置の製造方法
US8476743B2 (en) * 2011-09-09 2013-07-02 International Business Machines Corporation C-rich carbon boron nitride dielectric films for use in electronic devices
US20140000810A1 (en) * 2011-12-29 2014-01-02 Mark A. Franklin Plasma Activation System
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2015103729A (ja) * 2013-11-27 2015-06-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
KR102638422B1 (ko) * 2017-04-26 2024-02-19 도쿄엘렉트론가부시키가이샤 유황 및/또는 탄소계 화학물을 사용하는 유기막의 주기적 플라즈마 에칭 방법
US10541146B2 (en) * 2017-04-26 2020-01-21 Tokyo Electron Limited Method of cyclic plasma etching of organic film using sulfur-based chemistry
US10535531B2 (en) * 2017-04-26 2020-01-14 Tokyo Electron Limited Method of cyclic plasma etching of organic film using carbon-based chemistry

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007116644A1 (ja) * 2006-03-29 2007-10-18 Mitsubishi Electric Corporation プラズマｃｖｄ装置および薄膜形成方法並びに半導体装置
WO2008156029A1 (ja) * 2007-06-18 2008-12-24 Mitsubishi Heavy Industries, Ltd. 半導体装置の製造方法、半導体装置用絶縁膜及びその製造装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3508629B2 (ja) 1999-06-28 2004-03-22 三菱電機株式会社 耐熱低誘電率薄膜の形成方法、その耐熱低誘電率薄膜からなる半導体層間絶縁膜及びこの半導体層間絶縁膜を用いた半導体装置
JP3778045B2 (ja) 2001-10-09 2006-05-24 三菱電機株式会社 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置
JP3820188B2 (ja) * 2002-06-19 2006-09-13 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
JP3778164B2 (ja) 2002-12-06 2006-05-24 三菱電機株式会社 低誘電率膜の形成方法
JP2005167114A (ja) * 2003-12-05 2005-06-23 Mitsubishi Heavy Ind Ltd 窒化ホウ素膜の成膜方法及び成膜装置
JP2006032745A (ja) * 2004-07-20 2006-02-02 Kyoto Univ ボラジン系ポリマー及びボラジン含有ケイ素系ポリマーの製造方法
JP4415921B2 (ja) 2005-09-15 2010-02-17 三菱電機株式会社 半導体装置
JP2007324536A (ja) * 2006-06-05 2007-12-13 Renesas Technology Corp 層間絶縁膜およびその製造方法、ならびに半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007116644A1 (ja) * 2006-03-29 2007-10-18 Mitsubishi Electric Corporation プラズマｃｖｄ装置および薄膜形成方法並びに半導体装置
EP2001045A1 (en) * 2006-03-29 2008-12-10 Mitsubishi Electric Corporation Plasma cvd apparatus, method for forming thin film and semiconductor device
WO2008156029A1 (ja) * 2007-06-18 2008-12-24 Mitsubishi Heavy Industries, Ltd. 半導体装置の製造方法、半導体装置用絶縁膜及びその製造装置
EP2159832A1 (en) * 2007-06-18 2010-03-03 Mitsubishi Heavy Industries, Ltd. Process for producing semiconductor device, insulating film for semiconductor device, and apparatus for producing the insulating film

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H. AHN ET AL: "BCN coatings at low temperature using PACVD: capacitive vs. inductive plasma coupling", SURFACE AND COATINGS TECHNOLOGY, vol. 169-170, 1 June 2003 (2003-06-01), pages 251 - 253, XP055117681, ISSN: 0257-8972, DOI: 10.1016/S0257-8972(03)00177-4 *
KIM KYOUNG-BO ET AL: "Adhesion improvement of cubic BN:C film synthesized by a helicon wave plasma chemical vapor deposition process", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY., US, vol. 18, no. 3, 1 May 2000 (2000-05-01), pages 900 - 906, XP012005068, ISSN: 0734-2101, DOI: 10.1116/1.582273 *

Also Published As

Publication number Publication date
KR101181691B1 (ko) 2012-09-19
US8288294B2 (en) 2012-10-16
KR20110019386A (ko) 2011-02-25
TWI398924B (zh) 2013-06-11
US20110266660A1 (en) 2011-11-03
JP2010010516A (ja) 2010-01-14
JP5330747B2 (ja) 2013-10-30
EP2302667A1 (en) 2011-03-30
WO2010001815A1 (ja) 2010-01-07
TW201021120A (en) 2010-06-01

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