EP2163121B1 - Élément de détection acoustique - Google Patents

Élément de détection acoustique Download PDF

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Publication number
EP2163121B1
EP2163121B1 EP08760771A EP08760771A EP2163121B1 EP 2163121 B1 EP2163121 B1 EP 2163121B1 EP 08760771 A EP08760771 A EP 08760771A EP 08760771 A EP08760771 A EP 08760771A EP 2163121 B1 EP2163121 B1 EP 2163121B1
Authority
EP
European Patent Office
Prior art keywords
substrate
membrane
counter
sensor element
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP08760771A
Other languages
German (de)
English (en)
Other versions
EP2163121A1 (fr
Inventor
Frank Fischer
Arnim Hoechst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2163121A1 publication Critical patent/EP2163121A1/fr
Application granted granted Critical
Publication of EP2163121B1 publication Critical patent/EP2163121B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials

Definitions

  • the invention relates to an acoustic sensor element with at least one membrane and at least one fixed counter element.
  • the membrane of the sensor element is arranged in a cavity between a substrate and the counter element and acts as a movable electrode of a capacitor arrangement, while the counter element acts as a fixed counter electrode of this capacitor arrangement.
  • In the substrate at least one passage opening is formed, via which the sound pressure is applied to the membrane.
  • Micromechanical microphones are known from the prior art, which convert sound waves into an electrical signal with the aid of such a sensor element.
  • the known sensor elements comprise a capacitor arrangement with at least two electrodes, between which there is an air gap of 0.5 ⁇ m to 10 ⁇ m. Ideally, one electrode is rigid while the other electrode is movable so that it vibrates when sound waves occur. As a result, the capacitance between the two electrodes changes according to the varying sound pressure.
  • the quality of such a micromechanical transducer element depends essentially on the immobility of the counter electrode.
  • the counterelectrode is therefore often provided with a comparatively large thickness by being either structured out of the carrier substrate of the transducer element or subsequently provided with a thick layer, for example of epi-polysilicon.
  • a high rigidity of the counterelectrode can also be achieved if the counterelectrode is produced under strong tensile stress.
  • both the structuring of the carrier substrate and the generation of high layer thicknesses or the production of highly stressed layers is complicated and correspondingly expensive.
  • An acoustic sensor or transducer element of the type mentioned is also in the US 6,535,460 B2 described.
  • the structure of this sensor element comprises a substrate with a passage opening, which is spanned by a membrane.
  • a perforated counter element Arranged above the membrane and spaced therefrom is a perforated counter element, which is connected to the substrate in the edge area of the passage opening.
  • Membrane and counter element together form a capacitor, wherein the membrane acts as a movable electrode, while the counter element is the rigid electrode.
  • the membrane is acted upon by the passage opening in the substrate with sound waves and thus set in vibration.
  • the movement of the membrane is then detected by means of the counter element as capacity fluctuations of the capacitor.
  • Special measures for fixing and / or stiffening of the perforated counter element are in the US 6,535,460 B2 not described.
  • the counter element is connected according to the invention via at least one support element to the substrate, wherein the support element is arranged in the region of the cavity.
  • an opening for the support member is formed in the membrane, so that the membrane can oscillate freely within the cavity.
  • the rigidity of the mating member can be increased simply by supporting the mating member at one or more locations on an existing solid structure of the substrate and thus reducing the span of the mating member.
  • This measure opens up the possibility of realizing the counter element in the form of a thin layer, which does not necessarily have to be tensioned.
  • the span of the membrane and thus the sensitivity of the sensor element are not significantly affected by the support elements, since the membrane is provided according to the invention with openings through which the support elements from the counter element to the substrate structure, so that the membrane between the counter element and the substrate structure can move freely.
  • the counter element of the sensor element according to the invention can be realized in a thin layer which does not have to be designed for a high tensile stress, this can Sensor element according to the invention can be produced in total with standard semiconductor processes, which are inexpensive and volume-capable.
  • a substrate structure with a substrate base for the support element is formed in the region below the cavity.
  • the substrate base is thus arranged below the cavity and connected to the "substrate mainland", so that the substrate base is fixed and forms a good support point for the support element and the counter element.
  • the substrate structure below the cavity or the passage opening delimited by the substrate structure in the substrate is designed such that the membrane can be exposed to sound pressure over as large a surface as possible.
  • the substrate base is connected via comparatively narrow webs to the substrate in the edge region of the cavity.
  • the stability of the substrate structure required for the fixation of the mating element can be achieved simply by virtue of the fact that the substrate base and the webs essentially have the thickness of the unstructured substrate.
  • the counter element is provided with perforation holes, which reduce a damping of the membrane vibration.
  • pressure equalization between the cavity above the membrane and the environment take place.
  • the sensor element according to the invention is simply equipped with a further fixed counter electrode, which is realized in the substrate or in the substrate structure below the membrane.
  • the layer structure of in Fig. 1 illustrated acoustic sensor element 10 comprises a substrate 1, over which a membrane 2 and a fixed counter-element 3 are formed.
  • the membrane 2 is arranged in a cavity 4 between the substrate 1 and the counter-element 3 and acts as a movable electrode of a capacitor arrangement, while the counter-element 3 forms a fixed counter-electrode of this capacitor arrangement.
  • the substrate 1 is structured in the region 5 below the cavity 4.
  • the counter element 3 is connected to the substrate 1 via a support element 7.
  • the support element 7 is arranged in the region of the cavity 4 and is seated on a substrate base 8, which is part of the substrate structure below the cavity 4.
  • This substrate structure further comprises webs 9, via which the substrate base 8 is connected to the "substrate mainland” 1 in the edge region of the cavity 4.
  • the substrate base 8 as well as the webs 9 are formed in the full thickness of the substrate 1.
  • the membrane 2 there is an opening 11 for the support element 7, so that the membrane 2 can vibrate freely with appropriate sound pressure within the cavity 4.
  • the counter element 3 is in the area above the cavity 4 with perforations 12th Mistake.
  • a contact connection 13 is provided for the electrical connection of the counter element 3 functioning as a fixed electrode.
  • the membrane 2, which acts as a movable electrode is led to a connection pad 16 via a conductor track 14, which runs under an electrically isolated membrane clamping 15.
  • Micromechanical devices such as the above-described sensor element 10, are formed starting from a semiconductor substrate, e.g. a silicon wafer.
  • the counter-element 3 of the sensor element 10 functioning as a solid electrode is formed, for example, in a poly-silicon layer with a thickness of 0.5 ⁇ m-4 ⁇ m. This layer can be made and doped in a simple standard LPCVD process. The layer stress resulting from such a process is typically 10-100 mPa pressure. Since the counter element 3 of the sensor element 10 is stabilized and fixed according to the invention with the aid of the support element 7, no special measures for increasing or influencing the layer tension must be taken.
  • the support element 7 is advantageously made of an electrically insulating material to electrically decouple the substrate 1 and the counter-element 3.
  • the support member 7 may be formed, for example, of oxide, which is left in the sacrificial layer etching to expose the membrane 2 and generating the cavity 4 as residual oxide controlled.
  • oxide which is left in the sacrificial layer etching to expose the membrane 2 and generating the cavity 4 as residual oxide controlled.
  • Fig. 3a shows the top view of the substrate 1 in the region of the capacitor arrangement.
  • the substrate 1 is provided in this area with passage openings 6 for pressurizing a membrane, which acts as a movable electrode and is arranged above the substrate 1.
  • the passage openings 6 are here circular segment-shaped and separated by eight webs 9 of a corresponding substrate structure.
  • substrate pedestals 8 are formed in the substrate structure.
  • the shape of the passage openings is advantageously adapted to the membrane shape, in order to achieve the best possible sounding of the membrane.
  • the substrate base 8 are distributed as evenly as possible over the span of the counter-element to be supported in order to achieve a good fixation of the fixed electrode.
  • Fig. 3b shows the substrate 1 after a circular membrane 2 over the through holes 6 and this limiting substrate structure has been arranged.
  • the membrane 2 acts as a movable electrode of the capacitor arrangement of the sensor element.
  • the membrane 2 is electrically contacted via the conductor track 14, which is formed in the same layer as the membrane 2.
  • the membrane 2 is provided with openings 11 in the region above the substrate bases 8.
  • Fig. 3c finally shows a plan view of the layer structure of the sensor element after the counter element 3 has been generated over the membrane 2.
  • the counter element 3 is provided with perforation holes 12 in the region above the membrane 2 and the passage openings 6 in the substrate 1. Only in the region above the substrate bases 8, the structure of the counter element 3 is imperforated.
  • acoustic sensor element 40 is shown, which - as in the case of the sensor element 10 - was made starting from a substrate 41.
  • a membrane 42 and a fixed counter-element 43 are formed in the layer structure over the substrate 41.
  • the membrane 42 is arranged in a cavity 44 between the substrate 41 and the counter element 43 and acts as a movable electrode of a capacitor arrangement, while the counter element 43 forms a fixed counter electrode of this capacitor arrangement.
  • In the region below the cavity 44 through openings in the substrate 41 are formed, via which the sound pressure of the Membrane 42 takes place.
  • These passage openings are in the sectional view of Fig. 4 not shown, since the cutting plane extends within the substrate structure defining the passage openings 45.
  • the sensor elements 10 and 40 differ essentially in the realization of the support elements 7 and 47 for the counter-element 3 and 43, respectively.
  • the counter-element 43 three indentations 47 are formed whose bottom regions are connected to the substrate 41 or the substrate structure 45 via an insulation layer 48 are connected below the cavity 44.
  • These indentations 47 form support elements for the counter element 43, which are arranged in the region of the cavity 44.
  • the membrane 42 In the membrane 42 are openings 49 for the indentations 47, so that the membrane 42 can vibrate freely with appropriate sound pressure inside the cavity 44.
  • perforation holes 50 are formed in the region above the cavity 44.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Electrophonic Musical Instruments (AREA)

Claims (6)

  1. Elément de détection acoustique comprenant au moins une membrane (2) et au moins un élément conjugué fixe (3),
    - la membrane (2) étant disposée dans une cavité (4) entre un substrat (1) et l'élément conjugué (3) et servant d'électrode mobile d'un agencement de condensateur,
    - l'élément conjugué (3) servant de première électrode conjuguée fixe de cet agencement de condensateur et
    - au mois une ouverture de passage (6) étant réalisée dans le substrat (1) pour solliciter la membrane (2) avec une pression sonore,
    caractérisé en ce que l'élément conjugué (3) est connecté par le biais d'au moins un élément de support (7) au substrat (1), en ce que l'élément de support (7) est disposé dans la région de la cavité (4) et en ce qu'une ouverture (11) pour l'élément de support (7) est réalisée dans la membrane (2).
  2. Elément de détection selon la revendication 1, caractérisé en ce que dans la région sous la cavité (4) est réalisée une structure de substrat (5) avec au moins un socle de substrat (8) pour l'au moins un élément de support (7).
  3. Elément de détection selon la revendication 2, caractérisé en ce que la structure de substrat (5) comprend des nervures (9) par le biais desquelles le socle de substrat (8) est connecté au substrat (1) dans la région de bord de la cavité (4).
  4. Elément de détection selon l'une quelconque des revendications 2 ou 3, caractérisé en ce que le socle de substrat (8) et éventuellement les nervures (9) présentent essentiellement l'épaisseur du substrat (1) non structuré.
  5. Elément de détection selon l'une quelconque des revendications 1 à 4, caractérisé en ce que l'élément conjugué (3) est pourvu de trous de perforation (12).
  6. Elément de détection selon l'une quelconque des revendications 1 à 5, caractérisé en ce qu'au moins une autre électrode conjuguée fixe (21) de l'agencement de condensateur est réalisée dans le substrat (1) ou dans la structure de substrat (5) en dessous de la membrane (2).
EP08760771A 2007-06-28 2008-06-10 Élément de détection acoustique Not-in-force EP2163121B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007029911A DE102007029911A1 (de) 2007-06-28 2007-06-28 Akustisches Sensorelement
PCT/EP2008/057211 WO2009000641A1 (fr) 2007-06-28 2008-06-10 Élément de détection acoustique

Publications (2)

Publication Number Publication Date
EP2163121A1 EP2163121A1 (fr) 2010-03-17
EP2163121B1 true EP2163121B1 (fr) 2010-09-29

Family

ID=39684411

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08760771A Not-in-force EP2163121B1 (fr) 2007-06-28 2008-06-10 Élément de détection acoustique

Country Status (6)

Country Link
US (1) US8089828B2 (fr)
EP (1) EP2163121B1 (fr)
JP (1) JP2010531592A (fr)
AT (1) ATE483329T1 (fr)
DE (2) DE102007029911A1 (fr)
WO (1) WO2009000641A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007029911A1 (de) * 2007-06-28 2009-01-02 Robert Bosch Gmbh Akustisches Sensorelement
DE102009026682A1 (de) * 2009-06-03 2010-12-09 Robert Bosch Gmbh Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung
JP4947220B2 (ja) * 2010-05-13 2012-06-06 オムロン株式会社 音響センサ及びマイクロフォン
KR20130039504A (ko) 2011-10-12 2013-04-22 한국전자통신연구원 멤스 마이크로폰 및 그 제조 방법
ITTO20130225A1 (it) * 2013-03-21 2014-09-22 St Microelectronics Srl Struttura sensibile microelettromeccanica per un trasduttore acustico capacitivo includente un elemento di limitazione delle oscillazioni di una membrana, e relativo processo di fabbricazione
ITTO20130441A1 (it) * 2013-05-30 2014-12-01 St Microelectronics Srl Struttura di rilevamento per un trasduttore acustico mems con migliorata resistenza alle deformazioni
ITTO20130540A1 (it) 2013-06-28 2014-12-29 St Microelectronics Srl Dispositivo mems dotato di membrana sospesa e relativo procedimento di fabbricazione
JP6149628B2 (ja) * 2013-09-13 2017-06-21 オムロン株式会社 音響トランスデューサ及びマイクロフォン
DE102014214525B4 (de) * 2014-07-24 2019-11-14 Robert Bosch Gmbh Mikro-elektromechanisches Bauteil und Herstellungsverfahren für mikro-elektromechanische Bauteile
DE102014221037A1 (de) * 2014-10-16 2016-04-21 Robert Bosch Gmbh MEMS-Mikrofonbauelement
US9534492B2 (en) * 2014-11-11 2017-01-03 Baker Hughes Incorporated Pressure compensated capacitive micromachined ultrasound transducer for downhole applications

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0619271Y2 (ja) * 1984-07-30 1994-05-18 株式会社オ−デイオテクニカ コンデンサマイクロホンユニツト
JP3293729B2 (ja) * 1995-10-11 2002-06-17 ホシデン株式会社 振動ピックアップ装置およびその製造方法
JP3462645B2 (ja) * 1995-10-27 2003-11-05 株式会社オーディオテクニカ コンデンサマイクロホンの成極電源回路
US6535460B2 (en) 2000-08-11 2003-03-18 Knowles Electronics, Llc Miniature broadband acoustic transducer
DE102004010295A1 (de) * 2004-03-03 2005-09-22 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
JP4036866B2 (ja) * 2004-07-30 2008-01-23 三洋電機株式会社 音響センサ
US7346178B2 (en) 2004-10-29 2008-03-18 Silicon Matrix Pte. Ltd. Backplateless silicon microphone
US8477983B2 (en) * 2005-08-23 2013-07-02 Analog Devices, Inc. Multi-microphone system
WO2007029878A1 (fr) * 2005-09-09 2007-03-15 Yamaha Corporation Microphone a condensateur
DE102007029911A1 (de) * 2007-06-28 2009-01-02 Robert Bosch Gmbh Akustisches Sensorelement

Also Published As

Publication number Publication date
EP2163121A1 (fr) 2010-03-17
WO2009000641A1 (fr) 2008-12-31
DE102007029911A1 (de) 2009-01-02
JP2010531592A (ja) 2010-09-24
US8089828B2 (en) 2012-01-03
DE502008001455D1 (de) 2010-11-11
ATE483329T1 (de) 2010-10-15
US20100135123A1 (en) 2010-06-03

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