EP2163121B1 - Sonic sensor element - Google Patents

Sonic sensor element Download PDF

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Publication number
EP2163121B1
EP2163121B1 EP08760771A EP08760771A EP2163121B1 EP 2163121 B1 EP2163121 B1 EP 2163121B1 EP 08760771 A EP08760771 A EP 08760771A EP 08760771 A EP08760771 A EP 08760771A EP 2163121 B1 EP2163121 B1 EP 2163121B1
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EP
European Patent Office
Prior art keywords
substrate
membrane
counter
sensor element
cavity
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EP08760771A
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German (de)
French (fr)
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EP2163121A1 (en
Inventor
Frank Fischer
Arnim Hoechst
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials

Definitions

  • the invention relates to an acoustic sensor element with at least one membrane and at least one fixed counter element.
  • the membrane of the sensor element is arranged in a cavity between a substrate and the counter element and acts as a movable electrode of a capacitor arrangement, while the counter element acts as a fixed counter electrode of this capacitor arrangement.
  • In the substrate at least one passage opening is formed, via which the sound pressure is applied to the membrane.
  • Micromechanical microphones are known from the prior art, which convert sound waves into an electrical signal with the aid of such a sensor element.
  • the known sensor elements comprise a capacitor arrangement with at least two electrodes, between which there is an air gap of 0.5 ⁇ m to 10 ⁇ m. Ideally, one electrode is rigid while the other electrode is movable so that it vibrates when sound waves occur. As a result, the capacitance between the two electrodes changes according to the varying sound pressure.
  • the quality of such a micromechanical transducer element depends essentially on the immobility of the counter electrode.
  • the counterelectrode is therefore often provided with a comparatively large thickness by being either structured out of the carrier substrate of the transducer element or subsequently provided with a thick layer, for example of epi-polysilicon.
  • a high rigidity of the counterelectrode can also be achieved if the counterelectrode is produced under strong tensile stress.
  • both the structuring of the carrier substrate and the generation of high layer thicknesses or the production of highly stressed layers is complicated and correspondingly expensive.
  • An acoustic sensor or transducer element of the type mentioned is also in the US 6,535,460 B2 described.
  • the structure of this sensor element comprises a substrate with a passage opening, which is spanned by a membrane.
  • a perforated counter element Arranged above the membrane and spaced therefrom is a perforated counter element, which is connected to the substrate in the edge area of the passage opening.
  • Membrane and counter element together form a capacitor, wherein the membrane acts as a movable electrode, while the counter element is the rigid electrode.
  • the membrane is acted upon by the passage opening in the substrate with sound waves and thus set in vibration.
  • the movement of the membrane is then detected by means of the counter element as capacity fluctuations of the capacitor.
  • Special measures for fixing and / or stiffening of the perforated counter element are in the US 6,535,460 B2 not described.
  • the counter element is connected according to the invention via at least one support element to the substrate, wherein the support element is arranged in the region of the cavity.
  • an opening for the support member is formed in the membrane, so that the membrane can oscillate freely within the cavity.
  • the rigidity of the mating member can be increased simply by supporting the mating member at one or more locations on an existing solid structure of the substrate and thus reducing the span of the mating member.
  • This measure opens up the possibility of realizing the counter element in the form of a thin layer, which does not necessarily have to be tensioned.
  • the span of the membrane and thus the sensitivity of the sensor element are not significantly affected by the support elements, since the membrane is provided according to the invention with openings through which the support elements from the counter element to the substrate structure, so that the membrane between the counter element and the substrate structure can move freely.
  • the counter element of the sensor element according to the invention can be realized in a thin layer which does not have to be designed for a high tensile stress, this can Sensor element according to the invention can be produced in total with standard semiconductor processes, which are inexpensive and volume-capable.
  • a substrate structure with a substrate base for the support element is formed in the region below the cavity.
  • the substrate base is thus arranged below the cavity and connected to the "substrate mainland", so that the substrate base is fixed and forms a good support point for the support element and the counter element.
  • the substrate structure below the cavity or the passage opening delimited by the substrate structure in the substrate is designed such that the membrane can be exposed to sound pressure over as large a surface as possible.
  • the substrate base is connected via comparatively narrow webs to the substrate in the edge region of the cavity.
  • the stability of the substrate structure required for the fixation of the mating element can be achieved simply by virtue of the fact that the substrate base and the webs essentially have the thickness of the unstructured substrate.
  • the counter element is provided with perforation holes, which reduce a damping of the membrane vibration.
  • pressure equalization between the cavity above the membrane and the environment take place.
  • the sensor element according to the invention is simply equipped with a further fixed counter electrode, which is realized in the substrate or in the substrate structure below the membrane.
  • the layer structure of in Fig. 1 illustrated acoustic sensor element 10 comprises a substrate 1, over which a membrane 2 and a fixed counter-element 3 are formed.
  • the membrane 2 is arranged in a cavity 4 between the substrate 1 and the counter-element 3 and acts as a movable electrode of a capacitor arrangement, while the counter-element 3 forms a fixed counter-electrode of this capacitor arrangement.
  • the substrate 1 is structured in the region 5 below the cavity 4.
  • the counter element 3 is connected to the substrate 1 via a support element 7.
  • the support element 7 is arranged in the region of the cavity 4 and is seated on a substrate base 8, which is part of the substrate structure below the cavity 4.
  • This substrate structure further comprises webs 9, via which the substrate base 8 is connected to the "substrate mainland” 1 in the edge region of the cavity 4.
  • the substrate base 8 as well as the webs 9 are formed in the full thickness of the substrate 1.
  • the membrane 2 there is an opening 11 for the support element 7, so that the membrane 2 can vibrate freely with appropriate sound pressure within the cavity 4.
  • the counter element 3 is in the area above the cavity 4 with perforations 12th Mistake.
  • a contact connection 13 is provided for the electrical connection of the counter element 3 functioning as a fixed electrode.
  • the membrane 2, which acts as a movable electrode is led to a connection pad 16 via a conductor track 14, which runs under an electrically isolated membrane clamping 15.
  • Micromechanical devices such as the above-described sensor element 10, are formed starting from a semiconductor substrate, e.g. a silicon wafer.
  • the counter-element 3 of the sensor element 10 functioning as a solid electrode is formed, for example, in a poly-silicon layer with a thickness of 0.5 ⁇ m-4 ⁇ m. This layer can be made and doped in a simple standard LPCVD process. The layer stress resulting from such a process is typically 10-100 mPa pressure. Since the counter element 3 of the sensor element 10 is stabilized and fixed according to the invention with the aid of the support element 7, no special measures for increasing or influencing the layer tension must be taken.
  • the support element 7 is advantageously made of an electrically insulating material to electrically decouple the substrate 1 and the counter-element 3.
  • the support member 7 may be formed, for example, of oxide, which is left in the sacrificial layer etching to expose the membrane 2 and generating the cavity 4 as residual oxide controlled.
  • oxide which is left in the sacrificial layer etching to expose the membrane 2 and generating the cavity 4 as residual oxide controlled.
  • Fig. 3a shows the top view of the substrate 1 in the region of the capacitor arrangement.
  • the substrate 1 is provided in this area with passage openings 6 for pressurizing a membrane, which acts as a movable electrode and is arranged above the substrate 1.
  • the passage openings 6 are here circular segment-shaped and separated by eight webs 9 of a corresponding substrate structure.
  • substrate pedestals 8 are formed in the substrate structure.
  • the shape of the passage openings is advantageously adapted to the membrane shape, in order to achieve the best possible sounding of the membrane.
  • the substrate base 8 are distributed as evenly as possible over the span of the counter-element to be supported in order to achieve a good fixation of the fixed electrode.
  • Fig. 3b shows the substrate 1 after a circular membrane 2 over the through holes 6 and this limiting substrate structure has been arranged.
  • the membrane 2 acts as a movable electrode of the capacitor arrangement of the sensor element.
  • the membrane 2 is electrically contacted via the conductor track 14, which is formed in the same layer as the membrane 2.
  • the membrane 2 is provided with openings 11 in the region above the substrate bases 8.
  • Fig. 3c finally shows a plan view of the layer structure of the sensor element after the counter element 3 has been generated over the membrane 2.
  • the counter element 3 is provided with perforation holes 12 in the region above the membrane 2 and the passage openings 6 in the substrate 1. Only in the region above the substrate bases 8, the structure of the counter element 3 is imperforated.
  • acoustic sensor element 40 is shown, which - as in the case of the sensor element 10 - was made starting from a substrate 41.
  • a membrane 42 and a fixed counter-element 43 are formed in the layer structure over the substrate 41.
  • the membrane 42 is arranged in a cavity 44 between the substrate 41 and the counter element 43 and acts as a movable electrode of a capacitor arrangement, while the counter element 43 forms a fixed counter electrode of this capacitor arrangement.
  • In the region below the cavity 44 through openings in the substrate 41 are formed, via which the sound pressure of the Membrane 42 takes place.
  • These passage openings are in the sectional view of Fig. 4 not shown, since the cutting plane extends within the substrate structure defining the passage openings 45.
  • the sensor elements 10 and 40 differ essentially in the realization of the support elements 7 and 47 for the counter-element 3 and 43, respectively.
  • the counter-element 43 three indentations 47 are formed whose bottom regions are connected to the substrate 41 or the substrate structure 45 via an insulation layer 48 are connected below the cavity 44.
  • These indentations 47 form support elements for the counter element 43, which are arranged in the region of the cavity 44.
  • the membrane 42 In the membrane 42 are openings 49 for the indentations 47, so that the membrane 42 can vibrate freely with appropriate sound pressure inside the cavity 44.
  • perforation holes 50 are formed in the region above the cavity 44.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Electrophonic Musical Instruments (AREA)

Abstract

A micromechanical acoustic sensor element, which has at least one diaphragm and at least one fixed counter element, the diaphragm being situated in a cavity between a substrate and the counter element and acting as movable electrode of a capacitor system, the counter element acting as first fixed counter electrode of this capacitor system, and at least one through hole being formed in the substrate for the application of sound pressure to the diaphragm. For fixation and strengthening purposes, the counter element is connected to the substrate via at least one support element. The support element is situated in the region of the cavity, and an opening is formed in the diaphragm for the support element.

Description

Stand der TechnikState of the art

Die Erfindung betrifft ein akustisches Sensorelement mit mindestens einer Membran und mindestens einem feststehenden Gegenelement. Die Membran des Sensorelements ist in einem Hohlraum zwischen einem Substrat und dem Gegenelement angeordnet und fungiert als bewegliche Elektrode einer Kondensatoranordnung, während das Gegenelement als feststehende Gegenelektrode dieser Kondensatoranordnung fungiert. Im Substrat ist mindestens eine Durchgangsöffnung ausgebildet, über die die Schalldruckbeaufschlagung der Membran erfolgt.The invention relates to an acoustic sensor element with at least one membrane and at least one fixed counter element. The membrane of the sensor element is arranged in a cavity between a substrate and the counter element and acts as a movable electrode of a capacitor arrangement, while the counter element acts as a fixed counter electrode of this capacitor arrangement. In the substrate, at least one passage opening is formed, via which the sound pressure is applied to the membrane.

Aus dem Stand der Technik sind mikromechanische Mikrofone bekannt, die Schallwellen mit Hilfe eines derartigen Sensorelements in ein elektrisches Signal umwandeln. Die bekannten Sensorelemente umfassen eine Kondensatoranordnung mit mindestens zwei Elektroden, zwischen denen ein Luftspalt von 0,5µm bis 10µm besteht. Idealerweise ist die eine Elektrode starr, während die andere Elektrode beweglich ist, so dass sie beim Auftreten von Schallwellen in Schwingung versetzt wird. Dadurch verändert sich die Kapazität zwischen den beiden Elektroden entsprechend dem variierenden Schalldruck.Micromechanical microphones are known from the prior art, which convert sound waves into an electrical signal with the aid of such a sensor element. The known sensor elements comprise a capacitor arrangement with at least two electrodes, between which there is an air gap of 0.5 μm to 10 μm. Ideally, one electrode is rigid while the other electrode is movable so that it vibrates when sound waves occur. As a result, the capacitance between the two electrodes changes according to the varying sound pressure.

Die Qualität eines solchen mikromechanischen Wandlerelements hängt wesentlich von der Unbeweglichkeit der Gegenelektrode ab. In der Praxis wird die Gegenelektrode deshalb häufig mit einer vergleichsweise großen Dicke ausgestattet, indem sie entweder aus dem Trägersubstrat des Wandlerelements herausstrukturiert wird oder nachträglich mit einer dicken Schicht, beispielsweise aus Epi-Polysilizium, versehen wird. Eine hohe Steifigkeit der Gegenelektrode kann aber auch erzielt werden, wenn die Gegenelektrode unter starker Zugverspannung hergestellt wird. Allerdings ist sowohl die Strukturierung des Trägersubstrats als auch das Erzeugen von hohen Schichtdicken oder die Herstellung stark verspannter Schichten aufwendig und entsprechend kostenintensiv.The quality of such a micromechanical transducer element depends essentially on the immobility of the counter electrode. In practice, the counterelectrode is therefore often provided with a comparatively large thickness by being either structured out of the carrier substrate of the transducer element or subsequently provided with a thick layer, for example of epi-polysilicon. However, a high rigidity of the counterelectrode can also be achieved if the counterelectrode is produced under strong tensile stress. However, both the structuring of the carrier substrate and the generation of high layer thicknesses or the production of highly stressed layers is complicated and correspondingly expensive.

Ein akustisches Sensor- bzw. Wandlerelement der eingangs genannten Art wird auch in der US 6,535,460 B2 beschrieben. Der Aufbau dieses Sensorelements umfasst ein Substrat mit einer Durchgangsöffnung, die von einer Membran überspannt wird. Über der Membran und von dieser beabstandet ist ein perforiertes Gegenelement angeordnet, das im Randbereich der Durchgangsöffnung mit dem Substrat verbunden ist. Membran und Gegenelement bilden zusammen einen Kondensator, wobei die Membran als bewegliche Elektrode fungiert, während das Gegenelement die starre Elektrode darstellt. Die Membran wird über die Durchgangsöffnung im Substrat mit Schallwellen beaufschlagt und so in Schwingung versetzt. Die Bewegung der Membran wird dann mit Hilfe des Gegenelements als Kapazitätsschwankungen des Kondensators erfasst. Besondere Maßnahmen zur Fixierung und/oder Versteifung des perforierten Gegenelements werden in der US 6,535,460 B2 nicht beschrieben.An acoustic sensor or transducer element of the type mentioned is also in the US 6,535,460 B2 described. The structure of this sensor element comprises a substrate with a passage opening, which is spanned by a membrane. Arranged above the membrane and spaced therefrom is a perforated counter element, which is connected to the substrate in the edge area of the passage opening. Membrane and counter element together form a capacitor, wherein the membrane acts as a movable electrode, while the counter element is the rigid electrode. The membrane is acted upon by the passage opening in the substrate with sound waves and thus set in vibration. The movement of the membrane is then detected by means of the counter element as capacity fluctuations of the capacitor. Special measures for fixing and / or stiffening of the perforated counter element are in the US 6,535,460 B2 not described.

Offenbarung der ErfindungDisclosure of the invention

Mit der vorliegenden Erfindung werden einfache konstruktive Maßnahmen zur Verbesserung der Wandlereigenschaften eines mikromechanischen akustischen Sensorelements der eingangs genannten Art vorgeschlagen. Diese Maßnahmen betreffen insbesondere die Fixierung und Versteifung des Gegenelements bzw. der Gegenelektrode der Kondensatoranordnung.With the present invention, simple design measures for improving the transducer properties of a micromechanical acoustic sensor element of the type mentioned are proposed. These measures relate in particular to the fixing and stiffening of the counter element or the counterelectrode of the capacitor arrangement.

Dazu ist das Gegenelement erfindungsgemäß über mindestens ein Stützelement mit dem Substrat verbunden, wobei das Stützelement im Bereich des Hohlraums angeordnet ist. Außerdem ist in der Membran eine Öffnung für das Stützelement ausgebildet, so dass die Membran innerhalb des Hohlraums frei schwingen kann.For this purpose, the counter element is connected according to the invention via at least one support element to the substrate, wherein the support element is arranged in the region of the cavity. In addition, an opening for the support member is formed in the membrane, so that the membrane can oscillate freely within the cavity.

Erfindungsgemäß ist erkannt worden, dass die Steifigkeit des Gegenelements einfach dadurch erhöht werden kann, dass das Gegenelement an einer oder mehreren Stellen auf einer vorhandenen festen Struktur des Substrats abgestützt wird und somit die Spannweite des Gegenelements reduziert wird. Diese Maßnahme eröffnet die Möglichkeit, das Gegenelement auch in Form einer dünnen Schicht zu realisieren, die nicht unbedingt zugverspannt sein muss. Die Spannweite der Membran und damit auch die Empfindlichkeit des Sensorelements werden durch die Stützelemente nicht wesentlich beeinträchtigt, da die Membran erfindungsgemäß mit Öffnungen versehen ist, durch die die Stützelemente vom Gegenelement auf die Substratstruktur verlaufen, so dass sich die Membran zwischen dem Gegenelement und der Substratstruktur frei bewegen kann.According to the invention, it has been recognized that the rigidity of the mating member can be increased simply by supporting the mating member at one or more locations on an existing solid structure of the substrate and thus reducing the span of the mating member. This measure opens up the possibility of realizing the counter element in the form of a thin layer, which does not necessarily have to be tensioned. The span of the membrane and thus the sensitivity of the sensor element are not significantly affected by the support elements, since the membrane is provided according to the invention with openings through which the support elements from the counter element to the substrate structure, so that the membrane between the counter element and the substrate structure can move freely.

Da das Gegenelement des erfindungsgemäßen Sensorelements in einer dünnen Schicht realisiert werden kann, die nicht auf eine hohe Zugspannung ausgelegt sein muss, kann das erfindungsgemäße Sensorelement insgesamt mit Standard-Halbleiterprozessen hergestellt werden, die kostengünstig und volumenfähig sind.Since the counter element of the sensor element according to the invention can be realized in a thin layer which does not have to be designed for a high tensile stress, this can Sensor element according to the invention can be produced in total with standard semiconductor processes, which are inexpensive and volume-capable.

Grundsätzlich gibt es verschiedene Möglichkeiten für die Ausgestaltung eines erfindungsgemäßen Sensorelements und insbesondere für die Anordnung der Stützelemente im Bereich des Hohlraums zwischen dem Gegenelement und dem Substrat.In principle, there are various possibilities for the design of a sensor element according to the invention and in particular for the arrangement of the support elements in the region of the cavity between the counter element and the substrate.

In einer bevorzugten Variante der Erfindung ist im Bereich unterhalb des Hohlraums eine Substratstruktur mit einem Substratsockel für das Stützelement ausgebildet. Der Substratsockel ist demnach unterhalb des Hohlraums angeordnet und mit dem "Substrat-Festland" verbunden, so dass der Substratsockel festgelegt ist und eine gute Stützstelle für das Stützelement und das Gegenelement bildet.In a preferred variant of the invention, a substrate structure with a substrate base for the support element is formed in the region below the cavity. The substrate base is thus arranged below the cavity and connected to the "substrate mainland", so that the substrate base is fixed and forms a good support point for the support element and the counter element.

Vorteilhafterweise wird die Substratstruktur unterhalb des Hohlraums bzw. die von der Substratstruktur begrenzte Durchgangsöffnung im Substrat so ausgelegt, dass die Membran möglichst großflächig mit Schalldruck beaufschlagt werden kann. In diesem Zusammenhang erweist es sich als vorteilhaft, wenn der Substratsockel über vergleichsweise schmale Stege mit dem Substrat im Randbereich des Hohlraums verbunden ist. Die für die Fixierung des Gegenelements erforderliche Stabilität der Substratstruktur kann einfach dadurch erzielt werden, dass der Substratsockel und die Stege im wesentlichen die Dicke des unstrukturierten Substrats aufweisen.Advantageously, the substrate structure below the cavity or the passage opening delimited by the substrate structure in the substrate is designed such that the membrane can be exposed to sound pressure over as large a surface as possible. In this context, it proves to be advantageous if the substrate base is connected via comparatively narrow webs to the substrate in the edge region of the cavity. The stability of the substrate structure required for the fixation of the mating element can be achieved simply by virtue of the fact that the substrate base and the webs essentially have the thickness of the unstructured substrate.

In einer vorteilhaften Ausgestaltung des erfindungsgemäßen Sensorelements ist das Gegenelement mit Perforationslöchern versehen, die eine Dämpfung der Membranschwingung vermindern. Außerdem kann über diese Perforationslöcher ein Druckausgleich zwischen dem Hohlraum über der Membran und der Umgebung stattfinden.In an advantageous embodiment of the sensor element according to the invention, the counter element is provided with perforation holes, which reduce a damping of the membrane vibration. In addition, through these perforation holes Pressure equalization between the cavity above the membrane and the environment take place.

Mit Hilfe einer erfindungsgemäßen Sensoranordnung können Schallwellen auch differentiell erfasst werden. Dazu wird das erfindungsgemäße Sensorelement einfach mit einer weiteren feststehenden Gegenelektrode ausgestattet, die im Substrat bzw. in der Substratstruktur unterhalb der Membran realisiert wird.With the aid of a sensor arrangement according to the invention, sound waves can also be detected differentially. For this purpose, the sensor element according to the invention is simply equipped with a further fixed counter electrode, which is realized in the substrate or in the substrate structure below the membrane.

Kurze Beschreibung der ZeichnungenBrief description of the drawings

Wie bereits voranstehend erörtert, gibt es verschiedene Möglichkeiten, die vorliegende Erfindung in vorteilhafter Weise auszugestalten und weiterzubilden. Dazu wird einerseits auf die dem unabhängigen Patentanspruch 1 nachgeordneten Patentansprüche und andererseits auf die nachfolgende Beschreibung mehrerer Ausführungsbeispiele der Erfindung anhand der Zeichnungen verwiesen.

Fig. 1
zeigt eine Schnittdarstellung durch den Schichtaufbau eines ersten erfindungsgemäßen Sensorelements 10 im Bereich einer Stützstelle und
Fig. 2
zeigt eine entsprechende Schnittdarstellung eines zweiten erfindungsgemäßen Sensorelements 20.
Fig. 3a
zeigt eine Draufsicht auf das Substrat eines erfindungsgemäßen Sensorelements,
Fig. 3b
zeigt eine Draufsicht auf die Membran dieses Sensorelements und
Fig. 3c
zeigt eine Draufsicht auf das Gegenelement dieses Sensorelements.
Fig. 4
zeigt eine Schnittdarstellung durch den Schichtaufbau eines vierten erfindungsgemäßen Sensorelements 40.
As already discussed above, there are various possibilities for embodying and developing the present invention in an advantageous manner. For this purpose, reference is made on the one hand to the claims subordinate to the independent claim 1 and on the other hand to the following description of several embodiments of the invention with reference to the drawings.
Fig. 1
shows a sectional view through the layer structure of a first sensor element 10 according to the invention in the region of a support point and
Fig. 2
shows a corresponding sectional view of a second sensor element 20 according to the invention.
Fig. 3a
shows a plan view of the substrate of a sensor element according to the invention,
Fig. 3b
shows a plan view of the membrane of this sensor element and
Fig. 3c
shows a plan view of the counter element of this sensor element.
Fig. 4
shows a sectional view through the layer structure of a fourth sensor element 40 according to the invention.

Ausführungsformen der ErfindungEmbodiments of the invention

Der Schichtaufbau des in Fig. 1 dargestellten akustischen Sensorelements 10 umfasst ein Substrat 1, über dem eine Membran 2 und ein feststehendes Gegenelement 3 ausgebildet sind. Die Membran 2 ist in einem Hohlraum 4 zwischen dem Substrat 1 und dem Gegenelement 3 angeordnet und fungiert als bewegliche Elektrode einer Kondensatoranordnung, während das Gegenelement 3 eine feststehende Gegenelektrode dieser Kondensatoranordnung bildet. Das Substrat 1 ist im Bereich 5 unterhalb des Hohlraums 4 strukturiert. Hier befinden sich Durchgangsöffnungen zur Schalldruckbeaufschlagung der Membran 2, wie in Fig. 3a dargestellt. Das Gegenelement 3 ist über ein Stützelement 7 mit dem Substrat 1 verbunden. Das Stützelement 7 ist im Bereich des Hohlraums 4 angeordnet und sitzt auf einem Substratsockel 8 auf, der Teil der Substratstruktur unterhalb des Hohlraums 4 ist. Diese Substratstruktur umfasst ferner Stege 9, über die der Substratsockel 8 mit dem "Substrat-Festland" 1 im Randbereich des Hohlraums 4 verbunden ist. Der Substratsockel 8 so wie auch die Stege 9 sind in der vollen Dicke des Substrats 1 ausgebildet. In der Membran 2 befindet sich eine Öffnung 11 für das Stützelement 7, so dass die Membran 2 bei entsprechender Schalldruckbeaufschlagung innerhalb des Hohlraums 4 frei schwingen kann. Das Gegenelement 3 ist im Bereich über dem Hohlraum 4 mit Perforationslöchern 12 versehen. Zum elektrischen Anschluss des als Festelektrode fungierenden Gegenelements 3 ist ein Kontaktanschluss 13 vorgesehen. Die als bewegliche Elektrode fungierende Membran 2 ist über eine Leiterbahn 14, die unter einer elektrisch isolierten Membraneinspannung 15 verläuft, an ein Anschlusspad 16 geführt.The layer structure of in Fig. 1 illustrated acoustic sensor element 10 comprises a substrate 1, over which a membrane 2 and a fixed counter-element 3 are formed. The membrane 2 is arranged in a cavity 4 between the substrate 1 and the counter-element 3 and acts as a movable electrode of a capacitor arrangement, while the counter-element 3 forms a fixed counter-electrode of this capacitor arrangement. The substrate 1 is structured in the region 5 below the cavity 4. Here are passage openings for sound pressure of the membrane 2, as in Fig. 3a shown. The counter element 3 is connected to the substrate 1 via a support element 7. The support element 7 is arranged in the region of the cavity 4 and is seated on a substrate base 8, which is part of the substrate structure below the cavity 4. This substrate structure further comprises webs 9, via which the substrate base 8 is connected to the "substrate mainland" 1 in the edge region of the cavity 4. The substrate base 8 as well as the webs 9 are formed in the full thickness of the substrate 1. In the membrane 2 there is an opening 11 for the support element 7, so that the membrane 2 can vibrate freely with appropriate sound pressure within the cavity 4. The counter element 3 is in the area above the cavity 4 with perforations 12th Mistake. For the electrical connection of the counter element 3 functioning as a fixed electrode, a contact connection 13 is provided. The membrane 2, which acts as a movable electrode, is led to a connection pad 16 via a conductor track 14, which runs under an electrically isolated membrane clamping 15.

Mikromechanische Bauelemente, wie das voranstehend beschriebene Sensorelement 10, werden ausgehend von einem Halbleitersubstrat, wie z.B. einem Siliziumwafer, gefertigt. Das als Festelektrode fungierende Gegenelement 3 des Sensorelements 10 wird beispielsweise in einer PolySiliziumschicht mit einer Dicke von 0,5µm - 4µm ausgebildet. Diese Schicht kann in einem einfachen Standard-LPCVD-Prozess hergestellt und dotiert werden. Die Schichtspannung, die sich bei einem derartigen Prozess einstellt, liegt typischerweise bei 10-100 mPa Druck. Da das Gegenelement 3 des Sensorelements 10 erfindungsgemäß mit Hilfe des Stützelements 7 stabilisiert und fixiert wird, müssen keine besonderen Maßnahmen zur Erhöhung oder Beeinflussung der Schichtspannung getroffen werden. Das Stützelement 7 besteht vorteilhafterweise aus einem elektrisch isolierenden Material, um das Substrat 1 und das Gegenelement 3 elektrisch zu entkoppeln. So kann das Stützelement 7 beispielsweise aus Oxid gebildet sein, das beim Opferschichtätzen zum Freilegen der Membran 2 und Erzeugen des Hohlraums 4 als Restoxid kontrolliert stehen gelassen wird. Es sind aber auch andere elektrisch isolierte Varianten möglich, wie z.B. ein PolySilizium-Stützelement mit Nitrid-Isolation.Micromechanical devices, such as the above-described sensor element 10, are formed starting from a semiconductor substrate, e.g. a silicon wafer. The counter-element 3 of the sensor element 10 functioning as a solid electrode is formed, for example, in a poly-silicon layer with a thickness of 0.5 μm-4 μm. This layer can be made and doped in a simple standard LPCVD process. The layer stress resulting from such a process is typically 10-100 mPa pressure. Since the counter element 3 of the sensor element 10 is stabilized and fixed according to the invention with the aid of the support element 7, no special measures for increasing or influencing the layer tension must be taken. The support element 7 is advantageously made of an electrically insulating material to electrically decouple the substrate 1 and the counter-element 3. Thus, the support member 7 may be formed, for example, of oxide, which is left in the sacrificial layer etching to expose the membrane 2 and generating the cavity 4 as residual oxide controlled. But there are also other electrically isolated variants possible, such. a poly silicon support element with nitride insulation.

Das in Fig. 2 dargestellte Sensorelement 20 weist die gleiche Bauelementstruktur auf wie das in Fig. 1 dargestellte Sensorelement 10. Deshalb werden in Fig. 2 auch die gleichen Bezugszeichen verwendet. Jedoch umfasst die Kondensatoranordnung des Sensorelements 20 im Unterschied zum Sensorelement 10 zusätzliche Festelektroden 21, die im Bereich der Stege 9 im Substrat 1 ausgebildet sind. Diese Festelektroden 21 ermöglichen eine differentielle Erfassung der Kapazitätsschwankungen, die durch die Bewegungen der Membran 2 hervorgerufen werden.This in Fig. 2 shown sensor element 20 has the same component structure as that in Fig. 1 Therefore, in Fig. 2 also uses the same reference numerals. However, the Capacitor arrangement of the sensor element 20 in contrast to the sensor element 10 additional fixed electrodes 21, which are formed in the region of the webs 9 in the substrate 1. These fixed electrodes 21 allow a differential detection of the capacitance variations, which are caused by the movements of the membrane 2.

Der Schichtaufbau eines erfindungsgemäßen Sensorelements wird nachfolgend nochmals anhand der Figuren 3a bis 3c erläutert. Dabei werden für die auch in Fig. 1 dargestellten Strukturelemente die gleichen Bezugszeichen verwendet.The layer structure of a sensor element according to the invention will be described again below with reference to FIG FIGS. 3a to 3c explained. Thereby are also in the Fig. 1 shown structural elements used the same reference numerals.

Fig. 3a zeigt die Draufsicht auf das Substrat 1 im Bereich der Kondensatoranordnung. Das Substrat 1 ist in diesem Bereich mit Durchgangsöffnungen 6 zur Druckbeaufschlagung einer Membran versehen, die als bewegliche Elektrode fungiert und über dem Substrat 1 angeordnet wird. Die Durchgangsöffnungen 6 sind hier kreissegmentförmig und durch acht Stege 9 einer entsprechenden Substratstruktur voneinander getrennt. In der Mitte der Substratstruktur am Schnittpunkt der acht Stege 9 und in der Mitte eines jeden Stegs 9 zwischen dem Schnittpunkt und dem äußeren kreisförmigen Rand der Durchgangsöffnungen 6 sind Substratsockel 8 in der Substratstruktur ausgebildet. An dieser Stelle sei angemerkt, dass die Form der Durchgangsöffnungen vorteilhafterweise an die Membranform angepasst wird, um eine möglichst gute Schallbeaufschlagung der Membran zu erzielen. Die Substratsockel 8 werden möglichst gleichmäßig über die Spannweite des abzustützenden Gegenelements verteilt, um eine gute Fixierung der Festelektrode zu erreichen. Fig. 3a shows the top view of the substrate 1 in the region of the capacitor arrangement. The substrate 1 is provided in this area with passage openings 6 for pressurizing a membrane, which acts as a movable electrode and is arranged above the substrate 1. The passage openings 6 are here circular segment-shaped and separated by eight webs 9 of a corresponding substrate structure. In the middle of the substrate structure at the intersection of the eight webs 9 and in the middle of each web 9 between the intersection and the outer circular edge of the through-holes 6 substrate pedestals 8 are formed in the substrate structure. It should be noted at this point that the shape of the passage openings is advantageously adapted to the membrane shape, in order to achieve the best possible sounding of the membrane. The substrate base 8 are distributed as evenly as possible over the span of the counter-element to be supported in order to achieve a good fixation of the fixed electrode.

Fig. 3b zeigt das Substrat 1, nachdem eine kreisförmige Membran 2 über den Durchgangsöffnungen 6 und der diese begrenzenden Substratstruktur angeordnet worden ist. Wie bereits erwähnt, fungiert die Membran 2 als bewegliche Elektrode der Kondensatoranordnung des Sensorelements. Dazu wird die Membran 2 über die Leiterbahn 14, die in derselben Schicht wie die Membran 2 ausgebildet ist, elektrisch kontaktiert. Zudem verdeutlicht Fig. 3b, dass die Membran 2 im Bereich über den Substratsockeln 8 mit Öffnungen 11 versehen ist. Fig. 3b shows the substrate 1 after a circular membrane 2 over the through holes 6 and this limiting substrate structure has been arranged. As already mentioned, the membrane 2 acts as a movable electrode of the capacitor arrangement of the sensor element. For this purpose, the membrane 2 is electrically contacted via the conductor track 14, which is formed in the same layer as the membrane 2. In addition clarifies Fig. 3b in that the membrane 2 is provided with openings 11 in the region above the substrate bases 8.

Fig. 3c zeigt schließlich noch eine Draufsicht auf den Schichtaufbau des Sensorelements, nachdem das Gegenelement 3 über der Membran 2 erzeugt worden ist. Das Gegenelement 3 ist im Bereich über der Membran 2 und den Durchgangsöffnungen 6 im Substrat 1 mit Perforationslöchern 12 versehen. Lediglich im Bereich über den Substratsockeln 8 ist die Struktur des Gegenelements 3 unperforiert. Hier befinden sich Stützelemente 7, über die das Gegenelement 3 mit den Substratsockeln 8 verbunden ist. Durch diese Stützenkonstruktion verringert sich die freie Spannweite des Gegenelements 3 und damit auch die Auslenkung des Gegenelements 3 beim Auftreten von Schallwellen. Fig. 3c finally shows a plan view of the layer structure of the sensor element after the counter element 3 has been generated over the membrane 2. The counter element 3 is provided with perforation holes 12 in the region above the membrane 2 and the passage openings 6 in the substrate 1. Only in the region above the substrate bases 8, the structure of the counter element 3 is imperforated. Here are support elements 7, via which the counter element 3 is connected to the substrate sockets 8. By this support structure reduces the free span of the counter-element 3 and thus also the deflection of the counter-element 3 in the occurrence of sound waves.

In Fig. 4 ist ein erfindungsgemäßes akustisches Sensorelement 40 dargestellt, das - wie im Fall des Sensorelements 10 - ausgehend von einem Substrat 41 gefertigt wurde. In dem Schichtaufbau über dem Substrat 41 sind eine Membran 42 und ein feststehendes Gegenelement 43 ausgebildet. Die Membran 42 ist in einem Hohlraum 44 zwischen dem Substrat 41 und dem Gegenelement 43 angeordnet und fungiert als bewegliche Elektrode einer Kondensatoranordnung, während das Gegenelement 43 eine feststehende Gegenelektrode dieser Kondensatoranordnung bildet. Im Bereich unterhalb des Hohlraums 44 sind Durchgangsöffnungen im Substrat 41 ausgebildet, über die die Schalldruckbeaufschlagung der Membran 42 erfolgt. Diese Durchgangsöffnungen sind in der Schnittdarstellung der Fig. 4 nicht wiedergegeben, da die Schnittebene innerhalb der die Durchgangsöffnungen begrenzenden Substratstruktur 45 verläuft.In Fig. 4 an inventive acoustic sensor element 40 is shown, which - as in the case of the sensor element 10 - was made starting from a substrate 41. In the layer structure over the substrate 41, a membrane 42 and a fixed counter-element 43 are formed. The membrane 42 is arranged in a cavity 44 between the substrate 41 and the counter element 43 and acts as a movable electrode of a capacitor arrangement, while the counter element 43 forms a fixed counter electrode of this capacitor arrangement. In the region below the cavity 44 through openings in the substrate 41 are formed, via which the sound pressure of the Membrane 42 takes place. These passage openings are in the sectional view of Fig. 4 not shown, since the cutting plane extends within the substrate structure defining the passage openings 45.

Die Sensorelemente 10 und 40 unterscheiden sich im Wesentlichen in der Realisierung der Stützelemente 7 bzw. 47 für das Gegenelement 3 bzw. 43. Im Gegenelement 43 sind drei Einstülpungen 47 ausgebildet, deren Bodenbereiche über eine Isolationsschicht 48 mit dem Substrat 41 bzw. der Substratstruktur 45 unterhalb des Hohlraums 44 verbunden sind. Diese Einstülpungen 47 bilden Stützelemente für das Gegenelement 43, die im Bereich des Hohlraums 44 angeordnet sind. In der Membran 42 befinden sich Öffnungen 49 für die Einstülpungen 47, so dass die Membran 42 bei entsprechender Schalldruckbeaufschlagung innerhalb des Hohlraums 44 frei schwingen kann. Im Gegenelement 43 sind im Bereich über dem Hohlraum 44 Perforationslöcher 50 ausgebildet.The sensor elements 10 and 40 differ essentially in the realization of the support elements 7 and 47 for the counter-element 3 and 43, respectively. In the counter-element 43, three indentations 47 are formed whose bottom regions are connected to the substrate 41 or the substrate structure 45 via an insulation layer 48 are connected below the cavity 44. These indentations 47 form support elements for the counter element 43, which are arranged in the region of the cavity 44. In the membrane 42 are openings 49 for the indentations 47, so that the membrane 42 can vibrate freely with appropriate sound pressure inside the cavity 44. In the counter element 43, perforation holes 50 are formed in the region above the cavity 44.

Claims (6)

  1. Acoustic sensor element having at least one diaphragm (2) and at least one fixed opposing element (3),
    - wherein the diaphragm (2) is arranged in a cavity (4) between a substrate (1) and the opposing element (3) and acts as a moving electrode in a capacitor arrangement,
    - wherein the opposing element (3) acts as a first fixed opposing electrode in said capacitor arrangement, and
    - wherein the substrate (1) contains at least one through-opening (6) for applying sound pressure to the diaphragm (2),
    characterized in that the opposing element (3) is connected to the substrate (1) by means of at least one support element (7), in that the support element (7) is arranged in the region of the cavity (4), and in that the diaphragm (2) contains an opening (11) for the support element (7).
  2. Sensor element according to Claim 1, characterized in that the region beneath the cavity (4) contains a substrate structure (5) having at least one substrate base (8) for the at least one support element (7).
  3. Sensor element according to Claim 2, characterized in that the substrate structure (5) comprises webs (9) by means of which the substrate base (8) is connected to the substrate (1) in the marginal region of the cavity (4).
  4. Sensor element according to one of Claims 2 and 3, characterized in that the substrate base (8) and possibly the webs (9) essentially have the thickness of the unpatterned substrate (1).
  5. Sensor element according to one of Claims 1 to 4, characterized in that the opposing element (3) is provided with perforation holes (12).
  6. Sensor element according to one of Claims 1 to 5, characterized in that the substrate (1) or the substrate structure (5) beneath the diaphragm (2) contains at least one further fixed opposing electrode (21) of the capacitor arrangement.
EP08760771A 2007-06-28 2008-06-10 Sonic sensor element Not-in-force EP2163121B1 (en)

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DE102007029911A DE102007029911A1 (en) 2007-06-28 2007-06-28 Acoustic sensor element
PCT/EP2008/057211 WO2009000641A1 (en) 2007-06-28 2008-06-10 Sonic sensor element

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007029911A1 (en) * 2007-06-28 2009-01-02 Robert Bosch Gmbh Acoustic sensor element
DE102009026682A1 (en) * 2009-06-03 2010-12-09 Robert Bosch Gmbh Component with a micromechanical microphone structure and method for its production
JP4947220B2 (en) * 2010-05-13 2012-06-06 オムロン株式会社 Acoustic sensor and microphone
KR20130039504A (en) 2011-10-12 2013-04-22 한국전자통신연구원 Mems microphone and manufacturing method thereof
ITTO20130225A1 (en) * 2013-03-21 2014-09-22 St Microelectronics Srl SENSITIVE MICROELECTRANCHICAL STRUCTURE FOR A CAPACITIVE ACOUSTIC TRANSDUCER INCLUDING AN ELEMENT OF LIMITATION OF A MEMBRANE'S OSCILLATIONS AND ITS PROCESS OF PROCESSING
ITTO20130441A1 (en) * 2013-05-30 2014-12-01 St Microelectronics Srl DETECTION STRUCTURE FOR A MEMS ACOUSTIC TRANSDUCER WITH IMPROVED DEFORMATION RESISTANCE
ITTO20130540A1 (en) 2013-06-28 2014-12-29 St Microelectronics Srl MEMS DEVICE EQUIPPED WITH SUSPENDED MEMBRANE AND ITS MANUFACTURING PROCEDURE
JP6149628B2 (en) * 2013-09-13 2017-06-21 オムロン株式会社 Acoustic transducer and microphone
DE102014214525B4 (en) * 2014-07-24 2019-11-14 Robert Bosch Gmbh Microelectromechanical component and manufacturing method for microelectromechanical components
DE102014221037A1 (en) * 2014-10-16 2016-04-21 Robert Bosch Gmbh MEMS microphone component
US9534492B2 (en) * 2014-11-11 2017-01-03 Baker Hughes Incorporated Pressure compensated capacitive micromachined ultrasound transducer for downhole applications

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0619271Y2 (en) * 1984-07-30 1994-05-18 株式会社オ−デイオテクニカ Condenser microphone unit
JP3293729B2 (en) * 1995-10-11 2002-06-17 ホシデン株式会社 Vibration pickup device and manufacturing method thereof
JP3462645B2 (en) * 1995-10-27 2003-11-05 株式会社オーディオテクニカ Polarized power circuit of condenser microphone
US6535460B2 (en) 2000-08-11 2003-03-18 Knowles Electronics, Llc Miniature broadband acoustic transducer
DE102004010295A1 (en) * 2004-03-03 2005-09-22 Robert Bosch Gmbh Micromechanical component and corresponding manufacturing method
JP4036866B2 (en) * 2004-07-30 2008-01-23 三洋電機株式会社 Acoustic sensor
US7346178B2 (en) * 2004-10-29 2008-03-18 Silicon Matrix Pte. Ltd. Backplateless silicon microphone
WO2007024909A1 (en) * 2005-08-23 2007-03-01 Analog Devices, Inc. Multi-microphone system
EP1922898A1 (en) 2005-09-09 2008-05-21 Yamaha Corporation Capacitor microphone
DE102007029911A1 (en) * 2007-06-28 2009-01-02 Robert Bosch Gmbh Acoustic sensor element

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JP2010531592A (en) 2010-09-24
DE102007029911A1 (en) 2009-01-02
US8089828B2 (en) 2012-01-03
DE502008001455D1 (en) 2010-11-11
WO2009000641A1 (en) 2008-12-31
US20100135123A1 (en) 2010-06-03
ATE483329T1 (en) 2010-10-15

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