EP1989818A2 - Procédé destiné à fabriquer des couches à surface contenue et dispositifs comprenant ces couches - Google Patents

Procédé destiné à fabriquer des couches à surface contenue et dispositifs comprenant ces couches

Info

Publication number
EP1989818A2
EP1989818A2 EP06749552A EP06749552A EP1989818A2 EP 1989818 A2 EP1989818 A2 EP 1989818A2 EP 06749552 A EP06749552 A EP 06749552A EP 06749552 A EP06749552 A EP 06749552A EP 1989818 A2 EP1989818 A2 EP 1989818A2
Authority
EP
European Patent Office
Prior art keywords
layer
rsa
radiation
organic
organic active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06749552A
Other languages
German (de)
English (en)
Other versions
EP1989818A4 (fr
Inventor
Charles D. Lang
Stephen Sorich
Charles K. Taylor
Douglas R. Anton
Alberto Goenaga
Paul A. Sant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of EP1989818A2 publication Critical patent/EP1989818A2/fr
Publication of EP1989818A4 publication Critical patent/EP1989818A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
    • H04L9/30—Public key, i.e. encryption algorithm being computationally infeasible to invert or user's encryption keys not requiring secrecy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Definitions

  • This disclosure relates in general to a process for making an electronic device. It further relates to the device made by the process. Description of the Related Art
  • Organic active materials are present in many different kinds of electronic equipment. In such devices, an organic active layer is sandwiched between two electrodes.
  • One type of electronic device is an organic light emitting diode
  • the RSA consists essentially of a material which, when exposed to radiation, softens, or becomes more soluble, swellable, or dispersible in a liquid medium, or becomes more tacky or absorbable.
  • the RSA consists essentially of at least one polymer which undergoes backbone degradation when exposed to deep UV radiation, having a wavelength in the range of 200-300 nm. Examples of polymers undergoing such degradation include, but are not limited to, polyacrylates, polymethacrylates, polyketones, polysulfones, copolymers thereof, and mixtures thereof.
  • the exposure of the RSA to visible or UV radiation results in a reaction which decreases the volatility of the RSA in exposed areas.
  • a thermal development treatment involves heating to a temperature above the volatilization or sublimation temperature of the unexposed material and below the temperature at which the material is thermally reactive.
  • the material would be heated at a temperature above the sublimation temperature and below the thermal polymerization temperature.
  • the treated first organic active layer is exposed to radiation.
  • the type of radiation used will depend upon the sensitivity of the RSA as discussed above.
  • the exposure can be a blanket, overall exposure, or the exposure can be patternwise.
  • optional layer 150 examples include, but are not limited to, metal-chelated oxinoid compounds (e.g., Akt ⁇ or the like); phenanthroline- based compounds (e.g., 2,9-dimethyl-4,7-diphenyl-1 ,10-phenanthroline ("DDPA"), 4,7-diphenyl-1 ,10-phenanthroline (“DPA”), or the like); azole compounds (e.g., 2 ⁇ (4-biphenylyl)-5-(4-t-butylphenyl)-1 ,3,4-oxadiazole (“PBD” or the like), 3-(4-biphenylyl)-4-phenyl-5-(4-t-butylphenyl)-1 ,2,4- triazole (“TAZ” or the like); other similar compounds; or any one or more combinations thereof.
  • optional layer 150 may be inorganic and comprise BaO, LiF, U2O, or the like.
  • Example 5 demonstrates an RSA treatment that is subsequent to the formation of the first layer.
  • Coatings of Material A were prepared and thermally cured as described above. These were then overcoated with RSA coatings of Zonyl® TA-N as described above. The RSA coatings received blanket exposures up to about 4 J/cm ⁇ 2. The coatings were washed in trifluorotoluene after exposure, and contact angles were measured with anisole. The anisole contact angle was modulated from about 9 degrees (Material A surface) to 40-45 degrees. No significant difference was observed if the exposures were performed in air or an inert atmosphere.
  • Example 6 demonstrates an RSA treatment that is subsequent to the formation of the first layer, where removal of unexposed region is accomplished via sublimation.
  • Coatings of Material A were prepared and thermally cured as described above. These were then overcoated with RSA coatings of heneicosafluorododecylacrylate by spin coating from a 3% wt/vol solution in perfluorooctance.
  • One of the RSA coatings received a blanket UV exposure of about 1.5 J/cm 2 ; the other coating did not receive a UV exposure.
  • the two coatings were baked at 195 C for 20 minutes on a hot plate in air, and contact angles were measured with anisole. The anisole contact angle was about 55 degrees on the RSA coating that had been exposed to UV radiation. The anisole contact angle was 10 degrees on the coating that had not been exposed to UV radiation.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un procédé de formation d'une seconde couche à surface contenue appliquée sur une première couche. Ce procédé comprend les étapes consistant à : former la première couche présentant une première énergie de surface; traiter la première couche à l'aide d'une composition réactive tensioactive, pour former une première couche traitée présentant une seconde énergie de surface inférieure à la première énergie de surface; exposer la première couche traitée à des rayonnements; et former la seconde couche. L'invention concerne également un dispositif électronique organique obtenu par le procédé de l'invention.
EP06749552A 2006-03-02 2006-04-10 Procédé destiné à fabriquer des couches à surface contenue et dispositifs comprenant ces couches Withdrawn EP1989818A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75154906P 2006-03-02 2006-03-02
PCT/US2006/013118 WO2007106101A2 (fr) 2006-03-02 2006-04-10 Procédé destiné à fabriquer des couches à surface contenue et dispositifs comprenant ces couches

Publications (2)

Publication Number Publication Date
EP1989818A2 true EP1989818A2 (fr) 2008-11-12
EP1989818A4 EP1989818A4 (fr) 2011-05-18

Family

ID=38470737

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06749552A Withdrawn EP1989818A4 (fr) 2006-03-02 2006-04-10 Procédé destiné à fabriquer des couches à surface contenue et dispositifs comprenant ces couches

Country Status (6)

Country Link
EP (1) EP1989818A4 (fr)
JP (2) JP2009528663A (fr)
KR (1) KR20080108100A (fr)
CN (1) CN101507177B (fr)
TW (1) TW200735435A (fr)
WO (1) WO2007106101A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011501360A (ja) * 2007-10-15 2011-01-06 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 溶液処理された電子デバイス
WO2009055628A1 (fr) * 2007-10-26 2009-04-30 E. I. Du Pont De Nemours And Company Procédé et matériaux pour fabriquer des couches contenues et dispositifs fabriqués à partir de ceux-ci
US8772774B2 (en) 2007-12-14 2014-07-08 E. I. Du Pont De Nemours And Company Backplane structures for organic light emitting electronic devices using a TFT substrate
KR20160078973A (ko) * 2013-10-31 2016-07-05 카티바, 인크. 잉크젯 인쇄를 위한 폴리티오펜-포함 잉크 조성물

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922481A (en) * 1995-01-13 1999-07-13 Basf Aktiengesellschaft Electroluminescent arrangement
US20030017360A1 (en) * 2001-07-20 2003-01-23 Elizabeth Tai Structure-defining material for OLEDs
US20030129321A1 (en) * 2001-12-12 2003-07-10 Daigo Aoki Process for manufacturing pattern forming body
US20030222250A1 (en) * 2002-02-28 2003-12-04 Che-Hsiung Hsu Polymer buffer layers and their use in light-emitting diodes
WO2004042474A1 (fr) * 2002-11-06 2004-05-21 Asahi Glass Company, Limited Composition de resine photosensible de type negatif
US20050236614A1 (en) * 2004-04-22 2005-10-27 Parker Ian D Processes for forming organic layers, organic electronic devices, and transistors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416203A (en) * 1977-07-07 1979-02-06 Nippon Paint Co Ltd Dry making method of photosensitive resin plate
US5435887A (en) * 1993-11-03 1995-07-25 Massachusetts Institute Of Technology Methods for the fabrication of microstructure arrays
US5392980A (en) * 1993-12-29 1995-02-28 Dell Usa, L.P. Method and apparatus for reworking ball grid array packages to allow reuse of functional devices
JPH09203803A (ja) * 1996-01-25 1997-08-05 Asahi Glass Co Ltd カラーフィルタの製造方法及びそれを用いた液晶表示素子
JP4413035B2 (ja) * 1997-08-08 2010-02-10 大日本印刷株式会社 パターン形成体およびパターン形成方法
JP2001237069A (ja) * 2000-02-23 2001-08-31 Dainippon Printing Co Ltd Ｅｌ素子およびその製造方法
KR20010085420A (ko) * 2000-02-23 2001-09-07 기타지마 요시토시 전계발광소자와 그 제조방법
KR100839393B1 (ko) * 2001-07-26 2008-06-19 닛산 가가쿠 고교 가부시키 가이샤 폴리아믹산 수지 조성물
JP4092261B2 (ja) * 2002-08-02 2008-05-28 三星エスディアイ株式会社 基板の製造方法及び有機エレクトロルミネッセンス素子の製造方法
JP2004177793A (ja) * 2002-11-28 2004-06-24 Seiko Epson Corp 微細構造物の製造方法およびこの微細構造物の製造方法を用いて製造された自発光素子、光学素子、デバイス並びにこのデバイスを備えた電子機器
JP2004234901A (ja) * 2003-01-28 2004-08-19 Seiko Epson Corp ディスプレイ基板、有機ｅｌ表示装置、ディスプレイ基板の製造方法および電子機器
KR101117049B1 (ko) * 2003-02-06 2012-03-15 가부시키가이샤 네오맥스 마테리아르 기밀 밀봉용 캡 및 그 제조 방법
JP4632193B2 (ja) * 2003-09-18 2011-02-16 大日本印刷株式会社 パターニング用基板の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922481A (en) * 1995-01-13 1999-07-13 Basf Aktiengesellschaft Electroluminescent arrangement
US20030017360A1 (en) * 2001-07-20 2003-01-23 Elizabeth Tai Structure-defining material for OLEDs
US20030129321A1 (en) * 2001-12-12 2003-07-10 Daigo Aoki Process for manufacturing pattern forming body
US20030222250A1 (en) * 2002-02-28 2003-12-04 Che-Hsiung Hsu Polymer buffer layers and their use in light-emitting diodes
WO2004042474A1 (fr) * 2002-11-06 2004-05-21 Asahi Glass Company, Limited Composition de resine photosensible de type negatif
US20050236614A1 (en) * 2004-04-22 2005-10-27 Parker Ian D Processes for forming organic layers, organic electronic devices, and transistors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H. SUGIMURA ET AL.: "Micropatterning of Alkyl- and Fluoroalkylsilane Self-Assembled Monolayers Using Vacuum Ultraviolet Light", LANGMUIR, vol. 16, 1 June 2000 (2000-06-01), pages 885-888, XP002629628, *
See also references of WO2007106101A2 *

Also Published As

Publication number Publication date
CN101507177B (zh) 2014-08-13
EP1989818A4 (fr) 2011-05-18
WO2007106101A3 (fr) 2009-04-16
KR20080108100A (ko) 2008-12-11
TW200735435A (en) 2007-09-16
JP2009528663A (ja) 2009-08-06
CN101507177A (zh) 2009-08-12
WO2007106101A2 (fr) 2007-09-20
JP2013048118A (ja) 2013-03-07

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