Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
  • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
  • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
  • H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
  • H04L9/30—Public key, i.e. encryption algorithm being computationally infeasible to invert or user's encryption keys not requiring secrecy
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Definitions

• This disclosure relates in general to a process for making an electronic device. It further relates to the device made by the process. Description of the Related Art
• Organic active materials are present in many different kinds of electronic equipment. In such devices, an organic active layer is sandwiched between two electrodes.
• One type of electronic device is an organic light emitting diode
• the RSA consists essentially of a material which, when exposed to radiation, softens, or becomes more soluble, swellable, or dispersible in a liquid medium, or becomes more tacky or absorbable.
• the RSA consists essentially of at least one polymer which undergoes backbone degradation when exposed to deep UV radiation, having a wavelength in the range of 200-300 nm. Examples of polymers undergoing such degradation include, but are not limited to, polyacrylates, polymethacrylates, polyketones, polysulfones, copolymers thereof, and mixtures thereof.
• the exposure of the RSA to visible or UV radiation results in a reaction which decreases the volatility of the RSA in exposed areas.
• a thermal development treatment involves heating to a temperature above the volatilization or sublimation temperature of the unexposed material and below the temperature at which the material is thermally reactive.
• the material would be heated at a temperature above the sublimation temperature and below the thermal polymerization temperature.
• the treated first organic active layer is exposed to radiation.
• the type of radiation used will depend upon the sensitivity of the RSA as discussed above.
• the exposure can be a blanket, overall exposure, or the exposure can be patternwise.
• optional layer 150 examples include, but are not limited to, metal-chelated oxinoid compounds (e.g., Akt ⁇ or the like); phenanthroline- based compounds (e.g., 2,9-dimethyl-4,7-diphenyl-1 ,10-phenanthroline ("DDPA"), 4,7-diphenyl-1 ,10-phenanthroline (“DPA”), or the like); azole compounds (e.g., 2 ⁇ (4-biphenylyl)-5-(4-t-butylphenyl)-1 ,3,4-oxadiazole (“PBD” or the like), 3-(4-biphenylyl)-4-phenyl-5-(4-t-butylphenyl)-1 ,2,4- triazole (“TAZ” or the like); other similar compounds; or any one or more combinations thereof.
• optional layer 150 may be inorganic and comprise BaO, LiF, U2O, or the like.
• Example 5 demonstrates an RSA treatment that is subsequent to the formation of the first layer.
• Coatings of Material A were prepared and thermally cured as described above. These were then overcoated with RSA coatings of Zonyl® TA-N as described above. The RSA coatings received blanket exposures up to about 4 J/cm ⁇ 2. The coatings were washed in trifluorotoluene after exposure, and contact angles were measured with anisole. The anisole contact angle was modulated from about 9 degrees (Material A surface) to 40-45 degrees. No significant difference was observed if the exposures were performed in air or an inert atmosphere.
• Example 6 demonstrates an RSA treatment that is subsequent to the formation of the first layer, where removal of unexposed region is accomplished via sublimation.
• Coatings of Material A were prepared and thermally cured as described above. These were then overcoated with RSA coatings of heneicosafluorododecylacrylate by spin coating from a 3% wt/vol solution in perfluorooctance.
• One of the RSA coatings received a blanket UV exposure of about 1.5 J/cm 2 ; the other coating did not receive a UV exposure.
• the two coatings were baked at 195 C for 20 minutes on a hot plate in air, and contact angles were measured with anisole. The anisole contact angle was about 55 degrees on the RSA coating that had been exposed to UV radiation. The anisole contact angle was 10 degrees on the coating that had not been exposed to UV radiation.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• General Physics & Mathematics (AREA)
• Computing Systems (AREA)
• Computer Networks & Wireless Communication (AREA)
• Signal Processing (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Theoretical Computer Science (AREA)
• Computer Security & Cryptography (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Electroluminescent Light Sources (AREA)
• Thin Film Transistor (AREA)
• Solid State Image Pick-Up Elements (AREA)

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• 2006
  • 2006-04-10 KR KR1020087022342A patent/KR20080108100A/ko active Search and Examination
  • 2006-04-10 WO PCT/US2006/013118 patent/WO2007106101A2/en active Application Filing
  • 2006-04-10 JP JP2008557249A patent/JP2009528663A/ja active Pending
  • 2006-04-10 EP EP06749552A patent/EP1989818A4/de not_active Withdrawn
  • 2006-04-10 CN CN200680053669.0A patent/CN101507177B/zh not_active Expired - Fee Related
  • 2006-04-11 TW TW095112893A patent/TW200735435A/zh unknown
• 2012
  • 2012-12-03 JP JP2012264562A patent/JP2013048118A/ja active Pending

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