EP1972014A1 - Matériau semi-conducteur actif photovoltaïque et cellule photovoltaïque - Google Patents

Matériau semi-conducteur actif photovoltaïque et cellule photovoltaïque

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Publication number
EP1972014A1
EP1972014A1 EP06841403A EP06841403A EP1972014A1 EP 1972014 A1 EP1972014 A1 EP 1972014A1 EP 06841403 A EP06841403 A EP 06841403A EP 06841403 A EP06841403 A EP 06841403A EP 1972014 A1 EP1972014 A1 EP 1972014A1
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EP
European Patent Office
Prior art keywords
semiconductor material
mol
photovoltaically active
layer
active semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP06841403A
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German (de)
English (en)
Inventor
Hans-Josef Sterzel
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BASF SE
Original Assignee
BASF SE
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Publication date
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Priority to EP06841403A priority Critical patent/EP1972014A1/fr
Publication of EP1972014A1 publication Critical patent/EP1972014A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te

Definitions

  • the invention relates to photovoltaic cells and the photovoltaically active semiconductor material contained therein.
  • Photovoltaically active materials are semiconductors that convert light into electrical energy.
  • the basics have been known for a long time and are used technically.
  • Most of the technically used solar cells are based on crystalline silicon (monocrystalline or polycrystalline).
  • incident photons excite electrons of the semiconductor, so that they are lifted from the valence band into the conduction band.
  • the height of the energy gap between the valence band and the conduction band limits the maximum possible efficiency of the solar cell. For silicon, this is about 30% when exposed to sunlight. In practice, on the other hand, an efficiency of about 15% is achieved because some of the charge carriers are recombined by different processes and thus removed from use.
  • silicon With an energy gap around 1, 1 eV, silicon has a fairly good value for use. By reducing the energy gap, more charge carriers are transported into the conduction band, but the cell voltage becomes lower. Correspondingly, higher cell voltages are achieved with larger energy gaps, but since fewer photons are available for excitation, lower usable currents are available.
  • a new concept is to generate an intermediary band within the energy gap (up-conversion). This concept is described, for example, in Proceedings of the 14th Workshop on Quantum Solar Energy Conversion.
  • Te ions should be released, which is hardly possible from a chemical point of view. It is not stated if tellurium is released and where it remains. It is merely stated that a part of ZnTe is to be replaced by MnTe, because the Mn content should promote the incorporation of oxygen. In practice, the instructions given are incomplete and, if at all, difficult to target for more efficient photovoltaic cells with intermediate band.
  • the object of the present invention is to provide a photovoltaic active semiconductor material for a photovoltaic cell with high efficiency and high performance. Furthermore, it is an object of the present invention, in particular To provide an alternative, thermodynamically stable, photovoltaic active semiconductor material containing an intermediate level in the energy gap.
  • a photovoltaically active Halbleiterma- material with a crystal lattice of zinc telluride wherein in the zinc telluride crystal lattice ZnTe is substituted by 0.01 to 10 mol%, preferably 0.1 to 10 mol%, particularly preferably 0 , 03 to 5 mol%, more preferably 0.5 to 3 mol% of CoTe, and wherein in the zinc telluride crystal lattice Te is substituted by 0.01 to 30 mol%, preferably 0.5 to 10 mol% Oxygen.
  • oxygen can be stably incorporated into the zinc telluride grid when it contains cobalt telluride.
  • the content of cobalt in zinc telluride is preferably 0.01 to 10 at%, more preferably 0.5 to 3 at%.
  • a zinc telluride with the corresponding cobalt content absorbs molecular oxygen, releasing elemental tellurium according to formula (I)
  • This reaction is promoted by a metallic layer of a material which forms a metal telluride with tellurium, with which the semiconductor material is in contact, so that the material of the metallic layer forms Telluride with the telluride released in the semiconductor material in the substitution by oxygen.
  • the metallic layer may be, for example, a metallic back contact of a photovoltaic cell, wherein the metal of the back contact with the released tellurium forms tellurides in an intermediate layer.
  • metals in the metallic layer especially in the back contact, Ag, Zn, Mo, W, Cr, Cu, Co or Ni are particularly preferred. Very particular preference is given to a zinc-containing metallic layer.
  • the tellurides formed have a sufficiently high electrical conductivity (metallic or p-type) so as not to increase the cell resistance significantly.
  • the tellurium in the semiconductor material diffuses in the direction of the back contact. This is also necessary because elemental tellurium would absorb virtually all incident light because of its low bandgap of 0.2 eV and the photovoltaic cell would not be usable.
  • the nature of the metallic layer, especially the back contact, is important for the incorporation of oxygen into the body Zenktellurid grid.
  • the type of metallic layer (the back contact) determines the formation and location of the intermediate band in the band gap.
  • the preferred reaction conditions at which the reaction of formula (I) proceeds are as follows.
  • the preferred temperature is in the range of room temperature to 400 ° C, more preferably in the range of 250 to 350 ° C.
  • the oxygen partial pressure may be in the range of 0.001 Pa to 10 5 Pa. It can therefore be worked, for example, with air of 10 5 Pa.
  • the reaction time is preferably 0.1 to 100 minutes, more preferably 1 to 20 minutes.
  • ZnTe is substituted with 0 to 30 mol% of at least one compound selected from the group consisting of MgTe and MnTe.
  • the incorporation of magnesium and / or manganese into the ZnTe grating increases the overall bandgap.
  • the magnification is about 0.1 eV / 10 mol% MgTe or about 0.043 eV / 10 mol% MnTe.
  • the band gap of ZnTe has a size of about 2.25 eV.
  • a zinc telluride semiconductor in which 50 mol% is substituted by MgTe or MnTe has a band gap width of about 2.8 eV and about 2.47 eV, respectively.
  • a bandgap enlargement by means of magnesium or manganese is possible.
  • the photovoltaically active semiconductor material according to the invention without bank gap enlargement is preferred (0 mol% of ZnTe substituted by MgTe and MnTe).
  • ZnTe is substituted by 0 to 10% by mol, preferably 0.5 to 10% by mol, Cu 2 Te, CUßTe or CuTe.
  • Te is substituted by 0 to 10 mol%, preferably by 0.5 to 10 mol%, N and / or P.
  • the electrical conductivity of zinc telluride is increased by doping with copper, phosphorus or nitrogen. This also applies to the photovoltaically active semiconductor material according to the invention.
  • the increase of the electrical conductivity is advantageous for the use of the photovoltaically active semiconductor material in a photovoltaic cell.
  • the invention further relates to a semiconductor material having a crystal lattice of zinc telluride, wherein in the zinc telluride crystal lattice ZnTe is substituted by
  • tellurium can be substituted by 0 to 30 mol% oxygen to produce a photovoltaically active semiconductor material according to the invention.
  • the invention further relates to a photovoltaic cell containing the photovoltaically active semiconductor material according to the invention.
  • this is a photovoltaic cell with a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material contains a crystal lattice of zinc telluride and is substituted in the zinc telluride crystal lattice ZnTe
  • the photovoltaic cell further includes a back contact of a back contact material which forms a metal telluride with tellurium.
  • a back contact material which forms a metal telluride with tellurium.
  • the photovoltaic cell according to the invention has the advantage that the photovoltaically active semiconductor material used according to the invention is stable up to a temperature of 400.degree. Furthermore, the photovoltaic cells according to the invention have high efficiencies above 15%, since an intermediate level is generated in the energy gap of the photovoltaically active semiconductor material. Without an intermediate level, only such photons can lift electrons or charge carriers from the valence band into the conduction band, which have at least the energy of the energy gap. Higher energy photons also contribute to efficiency, with the excess of energy relative to the bandgap as heat is lost. With the intermediate level present in the semiconductor material used for the present invention, which can be partially filled, more photons can contribute to the excitation.
  • the photovoltaic cell according to the invention is preferably constructed so that it contains a p-type absorber layer of the photovoltaically active semiconductor material according to the invention, wherein the absorber layer is disposed on the back contact material.
  • Adjacent to this absorber layer made of the p-type semiconductor material is an n-conducting contact layer which preferably does not absorb the incident light as a window, preferably an n-conducting transparent layer comprising at least one semiconductor material selected from the group indium-tin-oxide, fluorine-doped Tin oxide, antimony-doped, gallium-doped, indium-doped or aluminum-doped zinc oxide. Incident light generates a positive and a negative charge on the p-type semiconductor layer.
  • the holes diffuse in the p-region to the back contact.
  • they recombine with electrons emerging from the back contact.
  • the electrons diffuse through the n-conducting window layer to the arresters, through the circuit and then into the back contact.
  • the back contact material on which the absorber layer is arranged preferably contains at least one element selected from the group Cu, Ag, Zn, Cr, Mo, W, Co and Ni, more preferably Zn. It is known that in particular aluminum-doped zinc oxide very well suited as a window layer for zinc telluride ("Studies of sputtered ZnTe films as interlayer for the CdTe thin film solar cell", B. boss, J. Fritsche, F. senseuberlich, A. Klein, W. Jaegermann, Thin Solid Films 480- 481 (2005) 204 to 207).
  • this comprises an electrically conductive substrate, a p-layer of the photovoltaically active semiconductor material according to the invention with a thickness of 0.1 to 20 .mu.m, preferably of 0.1 to 10 .mu.m, more preferably of 0.3 to 3 microns, and an n-layer of an n-type semiconductor material having a thickness of 0.1 to 20 microns, preferably 0.1 to 10 .mu.m, more preferably 0.3 to 3 microns.
  • the substrate is preferably a glass pane coated with an electrically conductive material, a flexible metal foil or a flexible metal sheet.
  • the invention further relates to a sputtering target of a zinc telluride semiconductor material in which ZnTi is substituted by
  • This sputtering target may be used to sputter a semiconductor material layer from the photovoltaic semiconductor material according to the invention, wherein the composition of the layer may deviate from the composition of the sputtering target, for example due to different volatilities of the elements contained in the sputtering targets.
  • further sputtering targets for example for co-sputtering of copper, can be used and / or further elements can be introduced into the sputtered layer by reactive sputtering.
  • the invention further relates to a method for producing the inventive photovoltaically active semiconductor material and / or a photovoltaic cell according to the invention, in which a layer of the photovoltaically active semiconductor material according to the invention on a layer of a material which forms a Metalltellurid with tellurium
  • a layer of the photovoltaically active semiconductor material according to the invention on a layer of a material which forms a Metalltellurid with tellurium Use of at least one deposition process selected from the group sputtering, electrochemical deposition, electroless deposition, physical vapor deposition (vapor deposition), chemical vapor deposition and laser ablation is generated.
  • any suitable method known to the person skilled in the art for producing a photovoltaically active semiconductor material can be used.
  • the layer of the photovoltaically active semiconductor material is produced according to the method according to the invention for the substitution of tellurium in the crystal lattice of the semiconductor material by oxygen in an oxygen-containing atmosphere.
  • the layer produced by the method according to the invention or the layer of the photovoltaically active semiconductor material contained in the photovoltaic cell according to the invention preferably has a thickness of 0.1 to 20 .mu.m, preferably of
  • This layer is covered by mini- at least one deposition method selected from the group sputtering, electrochemical deposition, electroless deposition, physical vapor deposition, chemical vapor deposition or laser ablation generated.
  • Sputtering refers to the knocking out of clusters comprising about 10 to 10,000 atoms from an electrode sputtering target by accelerated ions and the deposition of the knocked-out material onto a substrate.
  • the layers of the photovoltaically active semiconductor material according to the invention produced according to the invention are particularly preferably produced by sputtering, because sputtered layers have increased qualities. But it is also possible the deposition of zinc and cobalt and optionally Mg and / or Mn and / or Cu on a suitable substrate and the subsequent reaction with a Te vapor at temperatures below 400 ° C and in the presence of hydrogen. Furthermore, the electrochemical deposition of ZnTe for producing a layer and the subsequent doping of this layer with cobalt are also suitable for producing a photovoltaically active semiconductor material according to the invention.
  • the introduction of the doping metal cobalt during the synthesis of the zinc telluride in evacuated quartz vessels is particularly preferred.
  • zinc, tellurium and cobalt and optionally magnesium and / or manganese and / or copper are introduced into the quartz vessel, the quartz vessel is evacuated and sealed off in a vacuum. Thereafter, the quartz vessel is heated in an oven, first rapidly to about 400 ° C, because below the melting points of Zn and Te no reaction takes place. Then the temperature is increased more slowly at rates of 20 to 100 ° C / h up to 800 to 1300 ° C, preferably 1100 to 1200 ° C. At this temperature, the formation of the solid state structure takes place. The time required for this is 1 to 100 hours, preferably 5 to 50 hours.
  • Sputtering targets are produced from the thus-obtained powder by hot pressing at 300 to 1200 ° C., preferably at 400 to 700 ° C. and pressures of 5 to 500 MPa, preferably 20 to 200 MPa.
  • the pressing times are from 0.2 to 10 h, preferably 1 to 3 h.
  • the photovoltaically active semiconductor material is produced by sputtering, wherein a sputtering target of a photovoltaically active semiconductor material is used, wherein the photovoltaically active semiconductor material contains a crystal lattice of zinc telluride in which ZnTe is substituted by
  • nitrogen or phosphorus is introduced into the layer of the photovoltaically active semiconductor material by reactive sputtering in a sputtering atmosphere containing nitrogen, ammonia or phosphine.
  • the proportion of nitrogen or phosphorus is determined by the sputtering parameters.
  • Nitrogen is particularly preferably introduced into the layer of the photovoltaically active semiconductor material by reactive sputtering (R.G. Bohn et al .: RF Sputtered Films of Cu-doped and N-doped ZnTe, 1994 IEEE, Vol. 1, pages 354 to 356).
  • copper is introduced into the layer of the photovoltaically active semiconductor material by cosputters of a copper target with a target of the photovoltaically active semiconductor material according to the invention.
  • Copper which is effective, for example, in proportions of 0.5 to 10 mol% to increase the electrical conductivity of the photovoltaically active semiconductor material according to the invention, can be applied by cosputters of a copper target simultaneously with the sputtering of the Co-doped ZnTe. Also during cosputtering, the proportion of copper is determined by the sputtering parameters.
  • the proportion of copper can also be incorporated into the target composition from the outset. In this case, for example, 0.5 to 10 mol% of the zinc in the sputtering target is replaced by copper.
  • a sputtering target is produced, comprising a crystal lattice of zinc telluride, wherein ZnTe is substituted in the zinc telluride grid
  • microns preferably from 2 to 20 microns
  • the sputtering target produced in this way is then used for sputtering a layer which comprises the photovoltaically active semiconductor material according to the invention or in which the photovoltaically active semiconductor material Te is replaced by O, so that the inventive semiconductor material is used in an inventive photovoltaic cell as the absorber layer can come.
  • the substitution of Te by O in a semiconductor material having a crystal lattice of zinc telluride in which ZnTe is from 0.01 to 10 mol%, preferably from 0.1 to 10 mol%, particularly preferably from 0.3 to 5 mol%, completely Particularly preferably 0.5 to 3 mol% of CoTe is substituted, can be carried out according to the invention in various ways.
  • a layer of a semiconductor material is formed with a zinc telluride crystal lattice in which ZnTe is substituted by 0.01 to 10 mole% CoTe, 0 to 10 mole% Cu 2 Te, Cu 3 Te or CuTe and 0 to 30 mol% of at least one compound selected from the group
  • This layer is at a temperature between room temperature and
  • the oxygen is introduced into the layer of the photovoltaically active semiconductor material according to the invention by sputtering in an oxygen-containing sputtering atmosphere.
  • the temperature is the essential. It should be between room temperature and 400 ° C, preferably in the range of 250 to 350 ° C. The exchange of tellurium for oxygen proceeds rapidly at these temperatures. The period of time is essentially required to allow the diffusion of elemental tellurium through the ZnTe layer to a metallic layer, for example, back contact.
  • the layer of the photovoltaically active semiconductor material after reaction conditions under which a substitution of tellurium in the crystal lattice of the semiconductor material by oxygen, during a period between 0.1 and 10 minutes at a temperature between 250 and 350 ° C in an inert atmosphere to cause diffusion of tellurium in the semiconductor material to the material which forms a metal telluride with tellurium.
  • the substitution reaction already during the application of the semiconductor material (the absorber layer), for example by adding small amounts of oxygen to the sputtering atmosphere - usually argon under a pressure of 1 Pa - during a sputtering process.
  • the added amount of oxygen is preferably between 0.01 and 5%, more preferably between 0.1 and 1%, based on the argon.
  • This "reactive sputtering process" is more economical than the separate oxidation because a process step is saved.
  • the substrate is heated during application of the semiconductor material to temperatures of 200 to 350 ° C in order to deposit as crystalline absorber layers. This temperature is used for the substitution reaction.
  • the semiconductor layer (the absorber layer) may also be applied by a method known to those skilled in the art and exposed to an oxygen-containing atmosphere prior to the application of the window layer in order to carry out the substitution reaction.
  • window layers which are usually oxides, are often applied in an oxygen-containing atmosphere so as not to lose oxygen in the window layer.
  • FIG. 1 schematically shows the structure of an embodiment of a photovoltaic cell according to the invention, which contains an absorber layer of the photovoltaically active semiconductor material according to the invention.
  • the photovoltaic cell shown in Figure 1 comprises a plurality of layers, which are arranged on a substrate 1, for example made of glass.
  • a substrate 1 for example made of glass.
  • the back contact 2 contains a back contact material that can form a Metalltellurid with tellurium.
  • it is a back contact 2 made of molybdenum, which is coated with zinc.
  • a p-type absorber layer 3 is arranged from the photovoltaically active semiconductor material according to the invention.
  • n-type transparent layer 4 contains indium-tin oxide, fluorine-doped tin oxide, antimony-doped zinc oxide, gallium-doped zinc oxide or aluminum-doped zinc oxide.
  • the n-type layer 4 is connected via a schematically illustrated load 5 to the back contact 2.
  • tellurium is substituted by oxygen in the zinc telluride grid of the semiconductor material used.
  • the released tellurium diffuses in the absorber layer 3 in the direction of the back contact 2.
  • the metal of the back contact 2 forms with the tellurium Telluride in an intermediate layer 6 from. This prevents the elemental tellurium from absorbing the incident light.
  • Incident photons 7 generate in the region of the p-n junction 8 free charge carriers (electron-hole pairs 9). These are accelerated in different directions by the electric field in the space charge zone. The current flowing through it can be used by the consumer 5.
  • the elements were weighed in a purity of better than 99.99% in a quartz tube, the residual moisture removed by heating in vacuo and the quartz tube melted in vacuo.
  • the tube was heated from room temperature to 1200 ° C over 60 hours, and then the temperature was left at 1200 ° C for 10 hours. Thereafter, the oven was turned off and allowed to cool.
  • the quartz tube was opened under argon and the resulting coarse crystalline telluride was crushed to pieces of 1 to 5 mm in an agate mortar under argon cover. Finally, the crushed material was transferred to the grinding pot of a planetary ball mill. The powder bed was over-poured with n-octane and then grinding balls of stabilized zirconia, diameter 20 mm, were added. The volume fraction of the grinding balls was about 60%. The grinding pot was sealed under argon and the batch was then milled for 24 hours, whereby the telluride was comminuted to a particle size of 2 to 30 microns.
  • the grinding balls were separated and the n-octane distilled off from the telluride powder under argon at temperatures up to 180 ° C.
  • the dried telluride powder was transferred to a graphite die of a hot press whose inside diameter was two inches (about 51 mm).
  • the flask was mounted, the material heated to 600 ° C and then applied for 1 h at a pressure of 5000 Newton / cm 2 . After cooling, a gray disc of 3 mm thickness was obtained, which shimmered reddish.
  • the sputtering target thus obtained was bonded by means of indium to a support plate made of copper, thus obtaining the actual sputtering target.
  • the metals Cu, Ag, Zn, Cr, Mo, W, Co or Ni were sputtered onto a gas plate with a layer thickness of 1 .mu.m.
  • the layer structure thus obtained was placed for the substitution of tellurium by oxygen with the glass back each for 5 min in air on a heated to 350 ° C hotplate and controlled the surface temperature by means of an infrared thermometer. After about 20 seconds, 320 to 330 ° C were reached.

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  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

L'invention concerne un matériau semi-conducteur actif photovoltaïque et une cellule photovoltaïque avec un matériau semi-conducteur actif photovoltaïque, le matériau semi-conducteur actif photovoltaïque contenant une grille cristalline de tellurure de zinc et le ZnTe étant substitué dans la grille cristalline de tellurure de zinc par - 0,01 à 10 % en moles de CoTe, - 0 à 10 % en moles de Cu2Te, de Cu3Te ou de CuTe et - 0 à 30 % en moles d’au moins un composé sélectionné parmi le groupe constitué par MgTe et MnTe, et le Te dans la grille cristalline de tellurure de zinc étant substitué par - 0,1 à 30 % en moles d'oxygène. La cellule photovoltaïque comporte en outre un contact arrière en un matériau de contact arrière qui forme un tellurure de métal avec le tellure.
EP06841403A 2006-01-03 2006-12-18 Matériau semi-conducteur actif photovoltaïque et cellule photovoltaïque Withdrawn EP1972014A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06841403A EP1972014A1 (fr) 2006-01-03 2006-12-18 Matériau semi-conducteur actif photovoltaïque et cellule photovoltaïque

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06100036 2006-01-03
PCT/EP2006/069808 WO2007077114A1 (fr) 2006-01-03 2006-12-18 Matériau semi-conducteur actif photovoltaïque et cellule photovoltaïque
EP06841403A EP1972014A1 (fr) 2006-01-03 2006-12-18 Matériau semi-conducteur actif photovoltaïque et cellule photovoltaïque

Publications (1)

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EP1972014A1 true EP1972014A1 (fr) 2008-09-24

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US (1) US20080305573A1 (fr)
EP (1) EP1972014A1 (fr)
JP (1) JP4885237B2 (fr)
KR (1) KR101407805B1 (fr)
CN (1) CN101351894B (fr)
WO (1) WO2007077114A1 (fr)

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ES2302663B2 (es) * 2008-02-28 2009-02-16 Universidad Politecnica De Madrid Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia.
WO2013040452A2 (fr) * 2011-09-15 2013-03-21 The Board Of Trustees Of The Leland Stanford Junior University Électrodes d'oxyde transparent conducteur à aire de surface importante et macrostructurées
US9543457B2 (en) 2012-09-28 2017-01-10 First Solar, Inc. Method and system for manufacturing back contacts of photovoltaic devices
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CN101351894A (zh) 2009-01-21
KR101407805B1 (ko) 2014-06-17
KR20080085200A (ko) 2008-09-23
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