EP1970468A1 - Installation de revêtement et système de conduite de gaz - Google Patents

Installation de revêtement et système de conduite de gaz Download PDF

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Publication number
EP1970468A1
EP1970468A1 EP07103473A EP07103473A EP1970468A1 EP 1970468 A1 EP1970468 A1 EP 1970468A1 EP 07103473 A EP07103473 A EP 07103473A EP 07103473 A EP07103473 A EP 07103473A EP 1970468 A1 EP1970468 A1 EP 1970468A1
Authority
EP
European Patent Office
Prior art keywords
gas
outlet openings
line system
line
plant according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07103473A
Other languages
German (de)
English (en)
Other versions
EP1970468B1 (fr
Inventor
Stephan Wieder
Tobias Repmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP07103473A priority Critical patent/EP1970468B1/fr
Priority to ES07103473T priority patent/ES2331489T3/es
Priority to DE502007001071T priority patent/DE502007001071D1/de
Priority to TW096123135A priority patent/TW200837215A/zh
Priority to KR1020070063914A priority patent/KR100943560B1/ko
Priority to US11/849,524 priority patent/US20080216747A1/en
Priority to CNA2007103023486A priority patent/CN101260518A/zh
Priority to JP2008025074A priority patent/JP2008231568A/ja
Publication of EP1970468A1 publication Critical patent/EP1970468A1/fr
Application granted granted Critical
Publication of EP1970468B1 publication Critical patent/EP1970468B1/fr
Priority to KR1020090105888A priority patent/KR20100004900A/ko
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Definitions

  • the invention relates to a coating installation, in particular a PECVD coating installation, comprising a process chamber, and a gas line system for supplying and / or discharging a gas into and out of the process chamber, the gas line system having at least one feed opening for feeding gas into the gas line system or for discharging gas from the gas piping system, at least two outlet ports for discharging the gas from the gas piping system or for introducing the gas into the gas piping system, and conduits respectively disposed between the at least one inlet port and the outlet ports, the conduits being formed in such a way are that the flow resistance of the lines between the at least one feed opening and the outlet openings are each substantially the same size.
  • the invention relates to a gas line system for supplying and / or discharging a gas into or out of a process chamber of a coating installation, in particular a PECVD coating installation, comprising at least one feed opening for feeding gas into the gas line system or for discharging gas the gas line system, at least two outlet openings for discharging the gas from the gas line system or for introducing the gas into the gas line system, and lines, which are each arranged between the at least one feed opening and the outlet openings, wherein the lines are formed such that the flow resistance of Lines between the at least one feed opening and the outlet openings are each substantially the same size.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the coating is carried out with plasma support from the gas phase.
  • gases are supplied to a process or plasma chamber.
  • the plasma contain the layer-forming precursors, which allow a layer growth on a substrate.
  • the process gas In order to achieve homogeneous coatings, the process gas must be supplied as homogeneously as possible to the process space or the plasma space. From the prior art possibilities are known to achieve a homogeneous gas supply into a PECVD process chamber.
  • a gas line is provided which supplies a suitable mixture of the process gas to a so-called “showerhead” electrode.
  • the "showerhead” electrode serves as a first electrode, which can form a plasma by means of a second electrode.
  • it has outlet openings, via which the process gas flowing in via the gas line is homogeneously supplied to the process chamber, ie the process gas is homogeneously distributed on or over the coating surface.
  • Such a "showerhead” electrode for the coating of a circular substrate is for example in the US Pat. No. 6,410,089 B1 described.
  • the gas is distributed from an entry point over a branching pipeline structure. It can, as in the FIG. 1 shown, the process gas is fed via a feed 2 into the gas line system 1.
  • the fed process gas is split equally in two directions on the lines 3a and 3b.
  • the gas is supplied to the process chamber.
  • a first square sector 5a which is marked by dashed lines, is supplied with process gas.
  • a second sector 5b is supplied with process gas through the second opening 4b.
  • the flow resistance of the lines 3a and 3b are equal within predetermined tolerances.
  • the gas supplied via a point-shaped feed opening 2, as in the FIG. 2 outlined are first divided twice by two first line sections 3a and 3b.
  • the end of the line sections 3a and 3b can each be regarded as a virtual feed point 2a or 2b, respectively, from which two further line sections 3aa and 3ab or 3ba and 3bb originate.
  • the branch points 2a and 2b can also be considered as real feed points if they physically form a passage into another channel from which the structure continues.
  • the gas distribution system according to the FIG. 2 Projected onto a two-dimensional representation, the gas distribution system according to the FIG. 2 from an H-shaped structure, wherein at the center of the H-structure process gas is fed and fed at the four corners of the H-structure either the process space.
  • a further branching level can be supplied with an example, again H-shaped line structure.
  • any number of branch levels depending on the size and homogeneity requirements, can be provided.
  • the conductance values of the line sections between the start and end points within a distribution plane are identical. This can be realized for example by a geometrically identical design of the corresponding lines, ie corresponding line sections have the same length and the same cross-section.
  • a structure with H-like double and quadruple branches is for example in the DE10045958 A1 disclosed.
  • a coating system or a gas line system for a coating system with which in a process / plasma chamber a homogeneous process gas distribution over the surface of a substrate for different substrate formats generated and thus a homogeneous coating of the substrate can be achieved can.
  • rectangular substrate formats with other than even-numbered aspect ratios should be able to be supplied uniformly via a central feed and a regular grid of gas outlet points.
  • the coating installation according to the invention in particular a PECVD coating installation, comprises a process chamber and a gas line system for supplying and / or discharging a gas into or out of the process chamber of the coating installation, the gas line system having at least one feed opening for feeding gas into the gas line system or for discharging gas from the gas piping system, at least two outlet openings for discharging the gas from the gas piping system or for introducing the gas into the gas piping system, and conduits respectively arranged between the at least one inlet opening and the outlet openings, wherein the Lines are formed such that the flow resistance of the lines between the at least one feed opening and the outlet openings is substantially the same size.
  • the gas line system has at least one branch point at which a first line section opens into at least three second line sections adjoining the first line section.
  • the invention branches in at least one distribution level from a virtual or real gas feed point into more than two lines, in particular directly into three lines.
  • a uniform gas distribution is ensured by the fact that the gas conductances of the branched line sections within each distribution level are the same size.
  • the master values of a level may only deviate from one another within specified tolerances if the master values are very large (and therefore negligible) compared to the conductance values of one or more other distribution levels. All paths between the feed opening and the outlet openings have the same configuration, that is, a same cross-sectional profile over its length.
  • even odd-numbered formats with aspect ratios of 3: 2, 3: 4, etc. can be homogeneously coated, with a regular grid of outlet openings being uniformly supplied from a single feed point.
  • the structure is symmetrical at least to the extent that all lines or paths between the feed point and the outlet openings have the same length, an identical number of branches, and a same cross-sectional profile.
  • the branched off at the branch point line sections may originate at equal angles from the feed opening-side line section, ie the gas flowing through must undergo a change of direction at the same point at the branch point, through which the branched line sections, the gas also flows. In this way, an identical flow resistance is achieved in the lines of a line level.
  • a possible distribution of the gas in a process chamber over an area with an aspect ratio of 3: 2 is implemented, for example, by dividing the rectangular substrate area into, for example, six square areas, which are supplied via outlet openings located centrally in the center of the squares. Starting from the central supply point for the supply of the total area, the outlet openings can be uniformly supplied by performing a 2-fold and 3-fold divisions, which are point-symmetrical to the center of the total area.
  • the coating system according to the invention can be used particularly advantageously in a PECVD coating process, for example for the production of silicon thin-film solar modules.
  • the silicon layers of the solar cell are deposited on a flat glass substrate.
  • the size of the glasses usually corresponds to the size of the solar modules.
  • the coating system proposed in this application takes this into account.
  • the advantages in providing rectangular modules with non-even aspect ratios are, on the one hand, better handleability of these formats over square modules, e.g. during the installation of solar modules.
  • building integrated components usually rectangular formats, but especially formats with aspect ratios other than 2: 1, on.
  • a regular grid for the gas feed into the plasma chamber is provided with simultaneous uniform distribution of the gas to form a homogeneous coating.
  • the first line section opens into exactly three second line sections adjoining the first line section.
  • a tree structure is created with branches in different levels (the levels can either be considered concretely as layered arrangements or as abstract branching levels), i. H. the pipes branch out in the direction of the outlet openings.
  • the branching line sections are mirror-symmetrical and / or point-symmetrical with respect to the branching point such that no different flow resistances occur in the line branches.
  • the gas line system can of course be used as a system for the withdrawal of gas from the process chamber. This possibility should, although not always described in detail, also be protected within the scope of the invention.
  • the outlet openings leading into the process chamber then serve as openings for the withdrawal of the gas from the process chamber.
  • the withdrawn gas passes via the line system to the (in the context of this application) designated as the feed opening, central opening to leave the gas line system via this.
  • At least three outlet openings in particular exactly three outlet openings or a multiple of three outlet openings, are preferably connected to the at least one inlet opening.
  • rectangular formats with odd-numbered aspect ratios can be homogeneously coated to provide a regular service grid.
  • the lines between the feed opening and the outlet openings have the same length. At least the lines within a plane with a large flow resistance of the same length, at least from the trisection at a branching or node, have. The same length then leads to a substantially equal flow resistance at least in the tripartite structure.
  • the invention is particularly suitable for systems in which the flow resistance in any plane is so great that the flow resistance in the other planes would be negligible.
  • the lines preferably each have the same number of branches between the feed opening and the outlet openings.
  • the lines can run in at least two levels. This creates a tree structure with different levels, whereby the term "level” can be interpreted abstractly or concretely. In any case, starting from the central feed opening, the line structure branches between two levels into three line sections at each node point. The branch points or nodes are at the transition from one level to the next.
  • the first line section may extend from a first point, in particular the feed point, to the branch point, and the adjoining at least three second line sections may enclose angles of 90 ° and / or 180 ° with one another starting from the branch point.
  • the three pipe sections emanating from the branch point may include angles of 45 °, 135 ° and 225 °, respectively, with the first pipe section.
  • the conduit system preferably has a symmetrical structure, at least in one plane.
  • the branching lines are formed point-symmetrical to the junction or node.
  • At least one line section may be formed as a recess and / or depression in a plate, in particular milled out.
  • one or more line levels can each be ground into a plate.
  • the plates are arranged (sandwich-like) on top of each other, so that a three-dimensional tree structure is created.
  • the first line section is preferably formed as a recess and / or depression in a plate, in particular milled out, and between the first line section and the at least three on the side facing away from the first line portion of the plate second line sections a connection is formed as a bore in the plate.
  • the milled in the plates line sections are thus connected through holes in the plates with the line sections of other levels.
  • the number of outlet openings in a preferred embodiment is three or an integer multiple of three.
  • a divisible by three number of squares can be supplied evenly with gas. This corresponds to the possibility of a non-even aspect ratio.
  • the gas line system is preferably formed in the lid or as a lid of the process chamber of the coating system.
  • Electrodes can be arranged within the process chamber.
  • the outlet openings opening into the process chamber can be formed as openings in a plasma-generating electrode.
  • at least the plane of the gas line system containing the outlet openings may be formed as a flat electrode of a PECVD system. Together with another electrode, it can form a plasma in the process chamber.
  • a gas line system for supplying and / or discharging a gas into or out of a process chamber of a coating installation, in particular a PECVD coating installation, comprising at least one feed opening for feeding gas into the gas line system or for discharging Gas from the gas line system, at least two outlet openings to the outlet of the gas from the gas line system or for introducing the gas into the gas line system, and having lines, which are each arranged between the at least one feed opening and the outlet openings, wherein the lines are formed such that the flow resistance of the lines between the at least one feed opening and the outlet openings is substantially equal in each case.
  • the gas line system has at least one branch point at which a first Line section opens into at least three adjoining the first line section second line sections.
  • the gas line system can also be a subsystem of a larger system.
  • the invention relates in principle to 3-fold branches in the generic gas line system for supplying a number of three openings (or a multiple thereof).
  • Ratios should always be given with the larger side length in the numerator and the smaller side length in the denominator. All statements in inverted aspect ratios are of course to fall equally under the content of this application.
  • FIG. 3 a first embodiment of a gas line system 1 for a PECVD coating system according to the invention is shown.
  • Sketched is a two-stage distribution system.
  • the process gas is supplied via a central feed opening 2.
  • the supplied gas is distributed in equal parts in two lines 3a and 3b, which have up to two (virtual or real) feed points 2a and 2b have a substantially equal flow resistance.
  • triple junction is formed in each case.
  • the triple shafts are implemented in a plane below the plane of the lines 3a and 3b.
  • the line sections 3aa, 3ab, 3ac or 3ba, 3bb, 3bc open at angles of 45 °, 135 ° and 225 °, respectively, relative to the line sections 3a and 3b (ie at 90 ° angles to each other). in the direction of the outlet openings 4a, 4b and 4c or 4d, 4e and 4f.
  • the points 4a, 4b, 4c, 4d, 4e and 4f instead of opening into the plasma chamber as outlet openings, can again be virtual or real feed-in points or feed-in openings, which may be a subsequent, possibly in one evenly supply gas to the further level. It goes without saying that in each plane, the flow resistance between the virtual or the real feed points and the outlet points or outlet openings is substantially equal.
  • the lines 3a, 3b and 3aa, 3ab, 3ac, 3ba, 3bb, 3bc are each milled into a plate, wherein the plates of the lines 3a, 3b and 3aa, 3ab, 3ac, 3ba, 3bb, 3bc a Form tree structure into two levels arranged one above the other.
  • the central feed point 2 is designed as a passage 2 in a cover plate covering the first line of conduction 3a, 3b in order to allow entry into the line system 3a, 3b.
  • the (real or virtual) feed points 2a and 2b are formed as through holes 2a, 2b through the plate having the line structure 3a, 3b to allow a transition into the line system 3aa, 3ab, 3ac, 3ba, 3bb, 3bc of the second line level.
  • the outlet ports 4a, 4b, 4c, 4d, 4e and 4f are formed as through holes in the plate in which the second conduit plane 3aa, 3ab, 3ac, 3ba, 3bb, 3bc is milled. In this way, a sandwich-like plate structure with connecting openings between the individual levels is created.
  • the complete line structure with branched lines for uniform distribution of the gas to the outlet openings 4a, 4b, 4c, 4d, 4e and 4f may be formed as a cover plate of a process chamber.
  • the process gas is introduced homogeneously and evenly from above into the process chamber above the level to be coated.
  • FIG. 4 is an extension of the embodiment of the FIG. 3 represented with another branching level.
  • the nodes 2a, 2b in each case a 3-division of the lines 3a, 3b toward the nodes 4a, 4b, 4c, 4d, 4e and 4f takes place.
  • the nodes 4a, 4b, 4c, 4d, 4e and 4f in turn form transitions into a next (third) line level.
  • a branch is made into one as in FIG FIG.
  • the line structure shown is point symmetrical to the feed point 2.
  • the feed points 2 of the juxtaposed structures would be supplied by a feed point arranged centrally with respect to points 2.
  • all aspect ratios can be realized for a surface to be supplied uniformly, in which the side lengths of the grid divided into integer length units can be divided by 2 and / or by 3 in any combination.
  • This in turn makes it possible to coat substrates with completely new formats (3: 2, 6: 2, 3: 4, 3: 8, etc.), which may be easier to handle or from technical or aesthetic reasons are desirable over format ratios of 1: 1 or even format ratios.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
EP07103473A 2007-03-05 2007-03-05 Installation de revêtement et système de conduite de gaz Not-in-force EP1970468B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
EP07103473A EP1970468B1 (fr) 2007-03-05 2007-03-05 Installation de revêtement et système de conduite de gaz
ES07103473T ES2331489T3 (es) 2007-03-05 2007-03-05 Instalacion de revestimiento y sistema de conduccion de gas.
DE502007001071T DE502007001071D1 (de) 2007-03-05 2007-03-05 Beschichtungsanlage und Gasleitungssystem
TW096123135A TW200837215A (en) 2007-03-05 2007-06-26 Coating installation and gas-feed system
KR1020070063914A KR100943560B1 (ko) 2007-03-05 2007-06-27 코팅 장치 및 가스 주입 시스템
US11/849,524 US20080216747A1 (en) 2007-03-05 2007-09-04 Coating Installation And Gas Piping
CNA2007103023486A CN101260518A (zh) 2007-03-05 2007-12-25 涂覆设备和气体供应系统
JP2008025074A JP2008231568A (ja) 2007-03-05 2008-02-05 コーティング装置及びガス供給システム
KR1020090105888A KR20100004900A (ko) 2007-03-05 2009-11-04 코팅 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07103473A EP1970468B1 (fr) 2007-03-05 2007-03-05 Installation de revêtement et système de conduite de gaz

Publications (2)

Publication Number Publication Date
EP1970468A1 true EP1970468A1 (fr) 2008-09-17
EP1970468B1 EP1970468B1 (fr) 2009-07-15

Family

ID=37999263

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07103473A Not-in-force EP1970468B1 (fr) 2007-03-05 2007-03-05 Installation de revêtement et système de conduite de gaz

Country Status (8)

Country Link
US (1) US20080216747A1 (fr)
EP (1) EP1970468B1 (fr)
JP (1) JP2008231568A (fr)
KR (2) KR100943560B1 (fr)
CN (1) CN101260518A (fr)
DE (1) DE502007001071D1 (fr)
ES (1) ES2331489T3 (fr)
TW (1) TW200837215A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110162800A1 (en) * 2009-12-04 2011-07-07 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8216374B2 (en) 2005-12-22 2012-07-10 Applied Materials, Inc. Gas coupler for substrate processing chamber
US20090133631A1 (en) * 2007-11-23 2009-05-28 Applied Materials Inc. Coating device and method of producing an electrode assembly
CN101899652B (zh) * 2009-12-01 2012-05-02 东莞宏威数码机械有限公司 气体供应系统及方法
WO2012028660A1 (fr) * 2010-09-03 2012-03-08 Oerlikon Solar Ag, Trübbach Dispositif de distribution de gaz pour matériel de traitement sous vide
CN102061458B (zh) * 2010-11-29 2012-05-30 保定天威集团有限公司 基板镀膜设备的气体分布系统及方法
JP6157061B2 (ja) * 2012-05-11 2017-07-05 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
CN103510071A (zh) * 2012-06-21 2014-01-15 Tel太阳能公司 用于奇数个处理模块的均等气体分配的系统、方法及装置
JP5872089B1 (ja) * 2015-04-27 2016-03-01 中外炉工業株式会社 シャワープレート装置
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US20240295025A1 (en) * 2019-10-14 2024-09-05 Lam Research Corporation Dual plenum fractal showerhead
KR20220088476A (ko) * 2019-10-24 2022-06-27 에바텍 아크티엔게젤샤프트 진공 공정 처리 챔버 및 진공 처리 공정에 의한 기판 처리 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0215968A1 (fr) * 1985-09-21 1987-04-01 Leybold Aktiengesellschaft Dispositif pour la production de cellules solaires avec des couches de silicium amorphe, procédé pour l'usage du dispositif et cathode utilisée dans ce dispositif
US6189485B1 (en) * 1998-06-25 2001-02-20 Anelva Corporation Plasma CVD apparatus suitable for manufacturing solar cell and the like
DE10045958A1 (de) * 2000-09-16 2002-04-04 Muegge Electronic Gmbh Vorrichtung zum Leiten eines gasförmigen Mediums in eine und/oder aus einer Prozesskammer

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69024719T2 (de) * 1989-08-14 1996-10-02 Applied Materials Inc Gasverteilungssystem und Verfahren zur Benutzung dieses Systems
US5075256A (en) * 1989-08-25 1991-12-24 Applied Materials, Inc. Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
DE4011933C2 (de) * 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus
JP3380091B2 (ja) * 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
JP3155199B2 (ja) * 1996-04-12 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置
US5781693A (en) * 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6050506A (en) * 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6358323B1 (en) * 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
US6620289B1 (en) * 1999-04-27 2003-09-16 Applied Materials, Inc Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6432259B1 (en) * 1999-12-14 2002-08-13 Applied Materials, Inc. Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6553932B2 (en) * 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
US6461435B1 (en) * 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
US6381021B1 (en) * 2000-06-22 2002-04-30 Applied Materials, Inc. Method and apparatus for measuring reflectivity of deposited films
US6624091B2 (en) * 2001-05-07 2003-09-23 Applied Materials, Inc. Methods of forming gap fill and layers formed thereby
KR100427996B1 (ko) * 2001-07-19 2004-04-28 주식회사 아이피에스 박막증착용 반응용기 및 그를 이용한 박막증착방법
US6773507B2 (en) * 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US6827815B2 (en) * 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US6960263B2 (en) * 2002-04-25 2005-11-01 Applied Materials, Inc. Shadow frame with cross beam for semiconductor equipment
JP4239520B2 (ja) * 2002-08-21 2009-03-18 ソニー株式会社 成膜装置およびその製造方法、並びにインジェクタ
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0215968A1 (fr) * 1985-09-21 1987-04-01 Leybold Aktiengesellschaft Dispositif pour la production de cellules solaires avec des couches de silicium amorphe, procédé pour l'usage du dispositif et cathode utilisée dans ce dispositif
US6189485B1 (en) * 1998-06-25 2001-02-20 Anelva Corporation Plasma CVD apparatus suitable for manufacturing solar cell and the like
DE10045958A1 (de) * 2000-09-16 2002-04-04 Muegge Electronic Gmbh Vorrichtung zum Leiten eines gasförmigen Mediums in eine und/oder aus einer Prozesskammer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110162800A1 (en) * 2009-12-04 2011-07-07 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads

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DE502007001071D1 (de) 2009-08-27
KR100943560B1 (ko) 2010-02-22
EP1970468B1 (fr) 2009-07-15
KR20100004900A (ko) 2010-01-13
ES2331489T3 (es) 2010-01-05
CN101260518A (zh) 2008-09-10
TW200837215A (en) 2008-09-16
KR20080081792A (ko) 2008-09-10
US20080216747A1 (en) 2008-09-11
JP2008231568A (ja) 2008-10-02

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