EP1946374A4 - Dispositif semi-conducteur et procédé pour le fabriquer - Google Patents
Dispositif semi-conducteur et procédé pour le fabriquerInfo
- Publication number
- EP1946374A4 EP1946374A4 EP06832471.4A EP06832471A EP1946374A4 EP 1946374 A4 EP1946374 A4 EP 1946374A4 EP 06832471 A EP06832471 A EP 06832471A EP 1946374 A4 EP1946374 A4 EP 1946374A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005325448 | 2005-11-09 | ||
PCT/JP2006/322418 WO2007055299A1 (fr) | 2005-11-09 | 2006-11-02 | Dispositif semi-conducteur et procédé pour le fabriquer |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1946374A1 EP1946374A1 (fr) | 2008-07-23 |
EP1946374A4 true EP1946374A4 (fr) | 2014-01-01 |
Family
ID=38004279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06832471.4A Withdrawn EP1946374A4 (fr) | 2005-11-09 | 2006-11-02 | Dispositif semi-conducteur et procédé pour le fabriquer |
Country Status (5)
Country | Link |
---|---|
US (2) | US7713800B2 (fr) |
EP (1) | EP1946374A4 (fr) |
CN (2) | CN101950732B (fr) |
TW (1) | TWI431827B (fr) |
WO (1) | WO2007055299A1 (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4618064B2 (ja) * | 2005-09-12 | 2011-01-26 | ソニー株式会社 | 半導体装置およびその製造方法 |
KR20070071968A (ko) * | 2005-12-30 | 2007-07-04 | 삼성전자주식회사 | 다결정 실리콘 필름 제조방법 및 이를 적용한 박막트랜지스터의 제조방법 |
CN101401209B (zh) * | 2006-03-10 | 2011-05-25 | 株式会社半导体能源研究所 | 存储元件以及半导体器件 |
DE102006033713A1 (de) * | 2006-05-30 | 2007-12-06 | Osram Opto Semiconductors Gmbh | Organisches lichtemittierendes Bauelement, Vorrichtung mit einem organischen lichtemittierenden Bauelement und Beleuchtungseinrichtung sowie Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements |
WO2008047928A1 (fr) * | 2006-10-19 | 2008-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif semiconducteur et procédé de fabrication correspondant |
CN101529596B (zh) * | 2006-11-29 | 2011-12-14 | 株式会社半导体能源研究所 | 装置及其制造方法 |
US7449742B2 (en) * | 2006-12-20 | 2008-11-11 | Spansion Llc | Memory device with active layer of dendrimeric material |
JP5164745B2 (ja) * | 2007-09-03 | 2013-03-21 | 株式会社半導体エネルギー研究所 | 記憶装置 |
US7932138B2 (en) * | 2007-12-28 | 2011-04-26 | Viatron Technologies Inc. | Method for manufacturing thin film transistor |
KR20090075058A (ko) * | 2008-01-03 | 2009-07-08 | 삼성전자주식회사 | 반도체 검사 장치의 접촉 단자 |
US8217380B2 (en) * | 2008-01-09 | 2012-07-10 | International Business Machines Corporation | Polysilicon emitter BJT access device for PCRAM |
US20090193676A1 (en) * | 2008-01-31 | 2009-08-06 | Guo Shengguang | Shoe Drying Apparatus |
US8178927B2 (en) * | 2008-05-14 | 2012-05-15 | Qimonda Ag | Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same |
JP2010028105A (ja) | 2008-06-20 | 2010-02-04 | Semiconductor Energy Lab Co Ltd | 記憶素子及び記憶素子の作製方法 |
TWI347810B (en) * | 2008-10-03 | 2011-08-21 | Po Ju Chou | A method for manufacturing a flexible pcb and the structure of the flexible pcb |
KR101015347B1 (ko) * | 2009-02-16 | 2011-02-16 | 삼성모바일디스플레이주식회사 | 알에프아이디가 구비된 유기전계 발광 표시장치 |
JP2010257957A (ja) * | 2009-04-01 | 2010-11-11 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置 |
KR101321833B1 (ko) | 2010-04-09 | 2013-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체 메모리 장치 |
US8822970B2 (en) * | 2011-02-21 | 2014-09-02 | Korea Advanced Institute Of Science And Technology (Kaist) | Phase-change memory device and flexible phase-change memory device insulating nano-dot |
KR101322354B1 (ko) * | 2011-04-07 | 2013-10-25 | 한국과학기술원 | 습도 센서, 습도 센싱 방법 및 이를 위한 트랜지스터 |
WO2012161714A1 (fr) * | 2011-05-26 | 2012-11-29 | Empire Technology Development Llc | Formation d'un diélectrique et/ou d'un condensateur |
TWI565067B (zh) * | 2011-07-08 | 2017-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
CN103022012B (zh) * | 2011-09-21 | 2017-03-01 | 株式会社半导体能源研究所 | 半导体存储装置 |
US9573809B2 (en) | 2012-03-30 | 2017-02-21 | Micron Technology, Inc. | Method of forming a metal chalcogenide material and methods of forming memory cells including same |
TWI532162B (zh) * | 2013-06-25 | 2016-05-01 | 友達光電股份有限公司 | 可撓式顯示面板及其製造方法 |
CN104637852B (zh) * | 2013-11-08 | 2018-10-19 | 昆山工研院新型平板显示技术中心有限公司 | 一种柔性基板的剥离方法 |
CN104600029B (zh) * | 2015-01-16 | 2017-10-17 | 昆山工研院新型平板显示技术中心有限公司 | 一种柔性显示装置及其制作方法 |
CN104656996B (zh) * | 2015-03-03 | 2017-08-29 | 京东方科技集团股份有限公司 | 触控单元、触控基板及其制作方法和柔性触控显示装置 |
TWI569327B (zh) * | 2015-07-03 | 2017-02-01 | 友達光電股份有限公司 | 薄膜電晶體與其製作方法 |
CN110729269A (zh) * | 2018-07-17 | 2020-01-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
WO2020065856A1 (fr) * | 2018-09-27 | 2020-04-02 | シャープ株式会社 | Procédé de fabrication de dispositif d'affichage |
CN111509353B (zh) * | 2019-01-31 | 2022-03-01 | 群创光电股份有限公司 | 电子装置及天线装置 |
US11469491B2 (en) | 2019-01-31 | 2022-10-11 | Innolux Corporation | Electronic device and antenna device |
CN112216704A (zh) * | 2019-07-12 | 2021-01-12 | 群创光电股份有限公司 | 线路结构以及包含其的电子装置 |
CN111081743B (zh) * | 2019-12-11 | 2022-06-07 | 深圳市华星光电半导体显示技术有限公司 | 显示面板的制造方法及显示面板 |
JP7162164B1 (ja) * | 2021-05-07 | 2022-10-28 | 福建晶▲しい▼新材料科技有限公司 | 半導体電熱膜の前駆体溶液、半導体電熱膜構造、及び電熱構造の製造方法 |
US11204292B1 (en) | 2021-06-17 | 2021-12-21 | King Abdulaziz University | Deformable pressure sensor and methods of use thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030155602A1 (en) * | 2001-08-13 | 2003-08-21 | Coatue Corporation | Memory device |
EP1383165A2 (fr) * | 2002-07-16 | 2004-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de décollement |
US20040084670A1 (en) * | 2002-11-04 | 2004-05-06 | Tripsas Nicholas H. | Stacked organic memory devices and methods of operating and fabricating |
EP1548833A1 (fr) * | 2002-08-19 | 2005-06-29 | Seiko Epson Corporation | Memoire ferroelectrique et son procede de fabrication |
Family Cites Families (26)
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US5164850A (en) * | 1990-01-29 | 1992-11-17 | Sanyo Electric Co., Ltd. | Liquid crystal device including tantalum nitride with specific nitriding ratio |
US5206749A (en) | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US7075501B1 (en) | 1990-12-31 | 2006-07-11 | Kopin Corporation | Head mounted display system |
US5376561A (en) | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW504941B (en) * | 1999-07-23 | 2002-10-01 | Semiconductor Energy Lab | Method of fabricating an EL display device, and apparatus for forming a thin film |
JP2002026277A (ja) | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | メモリデバイス及びその駆動方法 |
JP2002026282A (ja) | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 単純マトリクス型メモリ素子の製造方法 |
DE10045192A1 (de) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
SG102681A1 (en) * | 2001-02-19 | 2004-03-26 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP4152665B2 (ja) * | 2001-07-11 | 2008-09-17 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
KR20060118620A (ko) | 2001-12-26 | 2006-11-23 | 동경 엘렉트론 주식회사 | 기판 처리 방법 및 반도체 장치의 제조 방법 |
JP3980918B2 (ja) * | 2002-03-28 | 2007-09-26 | 株式会社東芝 | アクティブマトリクス基板及びその製造方法、表示装置 |
JP2004128471A (ja) | 2002-08-07 | 2004-04-22 | Canon Inc | 不揮発メモリ装置 |
JP2004119016A (ja) * | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
US7186305B2 (en) * | 2002-11-26 | 2007-03-06 | Donald Ferrier | Process for improving the adhesion of polymeric materials to metal surfaces |
JP4585209B2 (ja) * | 2003-03-19 | 2010-11-24 | 大日本印刷株式会社 | 有機双安定性メモリ装置 |
US7354647B2 (en) | 2003-03-19 | 2008-04-08 | Dai Nippon Printing Co., Ltd. | Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device |
US7173193B2 (en) | 2003-03-31 | 2007-02-06 | International Business Machines Corporation | Method and structure for implementing enhanced interconnection performance of a land grid array (LGA) module and a printed wiring board |
US7459379B2 (en) * | 2004-03-26 | 2008-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7816721B2 (en) * | 2004-11-11 | 2010-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive |
JP4884784B2 (ja) | 2005-01-28 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法及び半導体装置 |
WO2006080550A1 (fr) | 2005-01-31 | 2006-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif de memoire et dispositif a semi-conducteurs |
US7608490B2 (en) | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7820495B2 (en) | 2005-06-30 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN101529596B (zh) | 2006-11-29 | 2011-12-14 | 株式会社半导体能源研究所 | 装置及其制造方法 |
-
2006
- 2006-11-02 EP EP06832471.4A patent/EP1946374A4/fr not_active Withdrawn
- 2006-11-02 CN CN201010167008.9A patent/CN101950732B/zh not_active Expired - Fee Related
- 2006-11-02 CN CN2006800418726A patent/CN101305465B/zh not_active Expired - Fee Related
- 2006-11-02 WO PCT/JP2006/322418 patent/WO2007055299A1/fr active Application Filing
- 2006-11-07 TW TW095141191A patent/TWI431827B/zh not_active IP Right Cessation
- 2006-11-07 US US11/593,651 patent/US7713800B2/en not_active Expired - Fee Related
-
2010
- 2010-04-02 US US12/753,194 patent/US8088654B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030155602A1 (en) * | 2001-08-13 | 2003-08-21 | Coatue Corporation | Memory device |
EP1383165A2 (fr) * | 2002-07-16 | 2004-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de décollement |
EP1548833A1 (fr) * | 2002-08-19 | 2005-06-29 | Seiko Epson Corporation | Memoire ferroelectrique et son procede de fabrication |
US20040084670A1 (en) * | 2002-11-04 | 2004-05-06 | Tripsas Nicholas H. | Stacked organic memory devices and methods of operating and fabricating |
Non-Patent Citations (1)
Title |
---|
See also references of WO2007055299A1 * |
Also Published As
Publication number | Publication date |
---|---|
TW200735427A (en) | 2007-09-16 |
EP1946374A1 (fr) | 2008-07-23 |
CN101950732A (zh) | 2011-01-19 |
US8088654B2 (en) | 2012-01-03 |
US20070105285A1 (en) | 2007-05-10 |
US7713800B2 (en) | 2010-05-11 |
US20100190312A1 (en) | 2010-07-29 |
CN101305465A (zh) | 2008-11-12 |
CN101305465B (zh) | 2010-06-09 |
CN101950732B (zh) | 2014-12-10 |
TWI431827B (zh) | 2014-03-21 |
WO2007055299A1 (fr) | 2007-05-18 |
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