EP1946374A4 - Dispositif semi-conducteur et procédé pour le fabriquer - Google Patents

Dispositif semi-conducteur et procédé pour le fabriquer

Info

Publication number
EP1946374A4
EP1946374A4 EP06832471.4A EP06832471A EP1946374A4 EP 1946374 A4 EP1946374 A4 EP 1946374A4 EP 06832471 A EP06832471 A EP 06832471A EP 1946374 A4 EP1946374 A4 EP 1946374A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06832471.4A
Other languages
German (de)
English (en)
Other versions
EP1946374A1 (fr
Inventor
Naoto Kusumoto
Nobuharu Ohsawa
Mikio Yukawa
Yoshitaka Dozen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of EP1946374A1 publication Critical patent/EP1946374A1/fr
Publication of EP1946374A4 publication Critical patent/EP1946374A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
EP06832471.4A 2005-11-09 2006-11-02 Dispositif semi-conducteur et procédé pour le fabriquer Withdrawn EP1946374A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005325448 2005-11-09
PCT/JP2006/322418 WO2007055299A1 (fr) 2005-11-09 2006-11-02 Dispositif semi-conducteur et procédé pour le fabriquer

Publications (2)

Publication Number Publication Date
EP1946374A1 EP1946374A1 (fr) 2008-07-23
EP1946374A4 true EP1946374A4 (fr) 2014-01-01

Family

ID=38004279

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06832471.4A Withdrawn EP1946374A4 (fr) 2005-11-09 2006-11-02 Dispositif semi-conducteur et procédé pour le fabriquer

Country Status (5)

Country Link
US (2) US7713800B2 (fr)
EP (1) EP1946374A4 (fr)
CN (2) CN101950732B (fr)
TW (1) TWI431827B (fr)
WO (1) WO2007055299A1 (fr)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4618064B2 (ja) * 2005-09-12 2011-01-26 ソニー株式会社 半導体装置およびその製造方法
KR20070071968A (ko) * 2005-12-30 2007-07-04 삼성전자주식회사 다결정 실리콘 필름 제조방법 및 이를 적용한 박막트랜지스터의 제조방법
CN101401209B (zh) * 2006-03-10 2011-05-25 株式会社半导体能源研究所 存储元件以及半导体器件
DE102006033713A1 (de) * 2006-05-30 2007-12-06 Osram Opto Semiconductors Gmbh Organisches lichtemittierendes Bauelement, Vorrichtung mit einem organischen lichtemittierenden Bauelement und Beleuchtungseinrichtung sowie Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
WO2008047928A1 (fr) * 2006-10-19 2008-04-24 Semiconductor Energy Laboratory Co., Ltd. Dispositif semiconducteur et procédé de fabrication correspondant
CN101529596B (zh) * 2006-11-29 2011-12-14 株式会社半导体能源研究所 装置及其制造方法
US7449742B2 (en) * 2006-12-20 2008-11-11 Spansion Llc Memory device with active layer of dendrimeric material
JP5164745B2 (ja) * 2007-09-03 2013-03-21 株式会社半導体エネルギー研究所 記憶装置
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
KR20090075058A (ko) * 2008-01-03 2009-07-08 삼성전자주식회사 반도체 검사 장치의 접촉 단자
US8217380B2 (en) * 2008-01-09 2012-07-10 International Business Machines Corporation Polysilicon emitter BJT access device for PCRAM
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
US8178927B2 (en) * 2008-05-14 2012-05-15 Qimonda Ag Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same
JP2010028105A (ja) 2008-06-20 2010-02-04 Semiconductor Energy Lab Co Ltd 記憶素子及び記憶素子の作製方法
TWI347810B (en) * 2008-10-03 2011-08-21 Po Ju Chou A method for manufacturing a flexible pcb and the structure of the flexible pcb
KR101015347B1 (ko) * 2009-02-16 2011-02-16 삼성모바일디스플레이주식회사 알에프아이디가 구비된 유기전계 발광 표시장치
JP2010257957A (ja) * 2009-04-01 2010-11-11 Seiko Epson Corp 有機エレクトロルミネッセンス装置
KR101321833B1 (ko) 2010-04-09 2013-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체 메모리 장치
US8822970B2 (en) * 2011-02-21 2014-09-02 Korea Advanced Institute Of Science And Technology (Kaist) Phase-change memory device and flexible phase-change memory device insulating nano-dot
KR101322354B1 (ko) * 2011-04-07 2013-10-25 한국과학기술원 습도 센서, 습도 센싱 방법 및 이를 위한 트랜지스터
WO2012161714A1 (fr) * 2011-05-26 2012-11-29 Empire Technology Development Llc Formation d'un diélectrique et/ou d'un condensateur
TWI565067B (zh) * 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN103022012B (zh) * 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
US9573809B2 (en) 2012-03-30 2017-02-21 Micron Technology, Inc. Method of forming a metal chalcogenide material and methods of forming memory cells including same
TWI532162B (zh) * 2013-06-25 2016-05-01 友達光電股份有限公司 可撓式顯示面板及其製造方法
CN104637852B (zh) * 2013-11-08 2018-10-19 昆山工研院新型平板显示技术中心有限公司 一种柔性基板的剥离方法
CN104600029B (zh) * 2015-01-16 2017-10-17 昆山工研院新型平板显示技术中心有限公司 一种柔性显示装置及其制作方法
CN104656996B (zh) * 2015-03-03 2017-08-29 京东方科技集团股份有限公司 触控单元、触控基板及其制作方法和柔性触控显示装置
TWI569327B (zh) * 2015-07-03 2017-02-01 友達光電股份有限公司 薄膜電晶體與其製作方法
CN110729269A (zh) * 2018-07-17 2020-01-24 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
WO2020065856A1 (fr) * 2018-09-27 2020-04-02 シャープ株式会社 Procédé de fabrication de dispositif d'affichage
CN111509353B (zh) * 2019-01-31 2022-03-01 群创光电股份有限公司 电子装置及天线装置
US11469491B2 (en) 2019-01-31 2022-10-11 Innolux Corporation Electronic device and antenna device
CN112216704A (zh) * 2019-07-12 2021-01-12 群创光电股份有限公司 线路结构以及包含其的电子装置
CN111081743B (zh) * 2019-12-11 2022-06-07 深圳市华星光电半导体显示技术有限公司 显示面板的制造方法及显示面板
JP7162164B1 (ja) * 2021-05-07 2022-10-28 福建晶▲しい▼新材料科技有限公司 半導体電熱膜の前駆体溶液、半導体電熱膜構造、及び電熱構造の製造方法
US11204292B1 (en) 2021-06-17 2021-12-21 King Abdulaziz University Deformable pressure sensor and methods of use thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030155602A1 (en) * 2001-08-13 2003-08-21 Coatue Corporation Memory device
EP1383165A2 (fr) * 2002-07-16 2004-01-21 Semiconductor Energy Laboratory Co., Ltd. Procédé de décollement
US20040084670A1 (en) * 2002-11-04 2004-05-06 Tripsas Nicholas H. Stacked organic memory devices and methods of operating and fabricating
EP1548833A1 (fr) * 2002-08-19 2005-06-29 Seiko Epson Corporation Memoire ferroelectrique et son procede de fabrication

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164850A (en) * 1990-01-29 1992-11-17 Sanyo Electric Co., Ltd. Liquid crystal device including tantalum nitride with specific nitriding ratio
US5206749A (en) 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US7075501B1 (en) 1990-12-31 2006-07-11 Kopin Corporation Head mounted display system
US5376561A (en) 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW504941B (en) * 1999-07-23 2002-10-01 Semiconductor Energy Lab Method of fabricating an EL display device, and apparatus for forming a thin film
JP2002026277A (ja) 2000-06-30 2002-01-25 Seiko Epson Corp メモリデバイス及びその駆動方法
JP2002026282A (ja) 2000-06-30 2002-01-25 Seiko Epson Corp 単純マトリクス型メモリ素子の製造方法
DE10045192A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
SG102681A1 (en) * 2001-02-19 2004-03-26 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4152665B2 (ja) * 2001-07-11 2008-09-17 株式会社半導体エネルギー研究所 発光装置及びその作製方法
KR20060118620A (ko) 2001-12-26 2006-11-23 동경 엘렉트론 주식회사 기판 처리 방법 및 반도체 장치의 제조 방법
JP3980918B2 (ja) * 2002-03-28 2007-09-26 株式会社東芝 アクティブマトリクス基板及びその製造方法、表示装置
JP2004128471A (ja) 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
JP2004119016A (ja) * 2002-09-20 2004-04-15 Semiconductor Energy Lab Co Ltd 発光装置
US7186305B2 (en) * 2002-11-26 2007-03-06 Donald Ferrier Process for improving the adhesion of polymeric materials to metal surfaces
JP4585209B2 (ja) * 2003-03-19 2010-11-24 大日本印刷株式会社 有機双安定性メモリ装置
US7354647B2 (en) 2003-03-19 2008-04-08 Dai Nippon Printing Co., Ltd. Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device
US7173193B2 (en) 2003-03-31 2007-02-06 International Business Machines Corporation Method and structure for implementing enhanced interconnection performance of a land grid array (LGA) module and a printed wiring board
US7459379B2 (en) * 2004-03-26 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7816721B2 (en) * 2004-11-11 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive
JP4884784B2 (ja) 2005-01-28 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体装置
WO2006080550A1 (fr) 2005-01-31 2006-08-03 Semiconductor Energy Laboratory Co., Ltd. Dispositif de memoire et dispositif a semi-conducteurs
US7608490B2 (en) 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101529596B (zh) 2006-11-29 2011-12-14 株式会社半导体能源研究所 装置及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030155602A1 (en) * 2001-08-13 2003-08-21 Coatue Corporation Memory device
EP1383165A2 (fr) * 2002-07-16 2004-01-21 Semiconductor Energy Laboratory Co., Ltd. Procédé de décollement
EP1548833A1 (fr) * 2002-08-19 2005-06-29 Seiko Epson Corporation Memoire ferroelectrique et son procede de fabrication
US20040084670A1 (en) * 2002-11-04 2004-05-06 Tripsas Nicholas H. Stacked organic memory devices and methods of operating and fabricating

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2007055299A1 *

Also Published As

Publication number Publication date
TW200735427A (en) 2007-09-16
EP1946374A1 (fr) 2008-07-23
CN101950732A (zh) 2011-01-19
US8088654B2 (en) 2012-01-03
US20070105285A1 (en) 2007-05-10
US7713800B2 (en) 2010-05-11
US20100190312A1 (en) 2010-07-29
CN101305465A (zh) 2008-11-12
CN101305465B (zh) 2010-06-09
CN101950732B (zh) 2014-12-10
TWI431827B (zh) 2014-03-21
WO2007055299A1 (fr) 2007-05-18

Similar Documents

Publication Publication Date Title
EP1935027A4 (fr) Dispositif a semi-conducteurs et son procede de fabrication
EP1946374A4 (fr) Dispositif semi-conducteur et procédé pour le fabriquer
EP1966740A4 (fr) Dispositif a semi-conducteurs et son procede de fabrication
EP1921674A4 (fr) Dispositif à semi-conducteurs et procédé de fabrication correspondant
TWI349981B (en) Semiconductor device and manufacturing method thereof
TWI318002B (en) Semiconductor device and manufacturing method thereof
TWI348741B (en) Semiconductor device and method of manufacturing the same
EP1887624A4 (fr) Dispositif semi-conducteur et son procede de fabrication
TWI316293B (en) Semiconductor device and method for manufacturing the same
EP2067173A4 (fr) Dispositif semi-conducteur et son procede de fabrication
TWI349346B (en) Semiconductor device and method for manufacturing the same
TWI562380B (en) Semiconductor device, electronic device, and method of manufacturing semiconductor device
SG131100A1 (en) Semiconductor device and manufacturing method of the same
EP1817796A4 (fr) Dispositif a semiconducteur et son procede de fabrication
EP2037496A4 (fr) Dispositif à semi-conducteur et procédé de fabrication d'un semi-conducteur
EP2088619A4 (fr) Dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur
TWI350590B (en) Asymmetric semiconductor device and fabrication method
SG119329A1 (en) Semiconductor device and method for manufacturing the same
EP1929545A4 (fr) Dispositif electroluminescent a semi-conducteur et son procede de fabrication
EP1965435A4 (fr) Dispositif semi-conducteur et son procédé de fabrication
EP2064732A4 (fr) Dispositif semiconducteur et procédé de fabrication correspondant
EP2112685A4 (fr) Dispositif semi-conducteur et son procede de fabrication
TWI339878B (en) Semiconductor device and fabrication method thereof
EP2089907A4 (fr) Dispositif a semi-conducteur et procede de fabrication associe
EP1933390A4 (fr) Dispositif semi-conducteur et procédé de fabrication idoine

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080409

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FI FR GB NL

RIN1 Information on inventor provided before grant (corrected)

Inventor name: OHSAWA, NOBUHARU

Inventor name: YUKAWA, MIKIO

Inventor name: DOZEN, YOSHITAKA

Inventor name: KUSUMOTO, NAOTO

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FI FR GB NL

A4 Supplementary search report drawn up and despatched

Effective date: 20131128

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/49 20060101ALI20131122BHEP

Ipc: H01L 29/423 20060101ALI20131122BHEP

Ipc: H01L 29/417 20060101ALI20131122BHEP

Ipc: H01L 51/05 20060101ALI20131122BHEP

Ipc: H01L 21/28 20060101ALI20131122BHEP

Ipc: H01L 27/105 20060101AFI20131122BHEP

Ipc: H01L 27/28 20060101ALI20131122BHEP

Ipc: H01L 29/786 20060101ALI20131122BHEP

Ipc: H01L 27/10 20060101ALI20131122BHEP

Ipc: H01L 21/336 20060101ALI20131122BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20170823