EP1935031A2 - Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial - Google Patents
Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterialInfo
- Publication number
- EP1935031A2 EP1935031A2 EP06793915A EP06793915A EP1935031A2 EP 1935031 A2 EP1935031 A2 EP 1935031A2 EP 06793915 A EP06793915 A EP 06793915A EP 06793915 A EP06793915 A EP 06793915A EP 1935031 A2 EP1935031 A2 EP 1935031A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- formula
- photovoltaic cell
- semiconductor material
- layer
- znte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 229910007709 ZnTe Inorganic materials 0.000 claims abstract description 17
- 239000002019 doping agent Substances 0.000 claims abstract description 17
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 15
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 9
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 8
- 229910052718 tin Inorganic materials 0.000 claims abstract description 8
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 7
- 229910052745 lead Inorganic materials 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims description 37
- 239000011777 magnesium Substances 0.000 claims description 29
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000006096 absorbing agent Substances 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005477 sputtering target Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000007717 exclusion Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910005900 GeTe Inorganic materials 0.000 claims description 2
- 229910019018 Mg 2 Si Inorganic materials 0.000 claims description 2
- 229910019021 Mg 2 Sn Inorganic materials 0.000 claims description 2
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- 229910005642 SnTe Inorganic materials 0.000 claims description 2
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 2
- 229910007657 ZnSb Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
- 238000007772 electroless plating Methods 0.000 claims 1
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- -1 tellurane ions Chemical class 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 150000004772 tellurides Chemical class 0.000 description 3
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- Photovoltaic cell with a photovoltaically active semiconductor material contained therein
- the invention relates to photovoltaic cells and the photovoltaically active semiconductor material contained therein.
- Photovoltaically active materials are semiconductors that convert light into electrical energy.
- the basics have been known for a long time and are used technically.
- Most of the technically used solar cells are based on crystalline silicon (monocrystalline or polycrystalline).
- incident photons excite electrons of the semiconductor, so that they are lifted from the valence band into the conduction band.
- the height of the energy gap between the valence band and the conduction band limits the maximum possible efficiency of the solar cell. For silicon, this is about 30% when exposed to sunlight. In practice, on the other hand, an efficiency of about 15% is achieved because some of the charge carriers are recombined by different processes and thus deprived of their use.
- silicon With an energy gap around 1, 1 eV, silicon has a fairly good value for use. By reducing the energy gap, more charge carriers are transported into the conduction band, but the cell voltage becomes lower. Correspondingly, higher cell voltages are achieved with larger energy gaps, but since fewer photons are present for excitation, lower usable currents are available.
- a new concept is to generate an intermediate level within the energy gap (up-conversion). This concept is described, for example, in the Proceedings of the 14th Workshop on Quantum Solar Energy Conversion Quantasol 2002, March, 17-23, 2002, Rauris, Salzburg, Austria, "Improving Solar Cells Efficiencies by the Up-Conversion", T. Trupke, MA Green, P. Würfel or "Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at intermediate levels ", A. Luque and A. Marti, Phys. Rev. Letters, Vol. 78, No. 26, June 1997, 5014-5017. For a band gap of 1.995 eV and an energy of the intermediate level at 0.713 eV, a maximum efficiency of 63.17% is calculated.
- the desired intermediate energy level in the bandgap is increased by replacing some of the tellurane ions in the anion lattice with the much more electronegative oxygen ion.
- tellurium was replaced by ion implantation in thin films by oxygen.
- a major disadvantage of this class of substances is that the solubility of the oxygen in the semiconductor is extremely low. It follows that, for example, the compounds Zn 1-x Mn x Tei -y Oy with y greater than 0.001 are not thermodynamically stable. Upon irradiation for a long time, they decompose into the stable tellurides and oxides. Use of up to 10 at% tellurium by oxygen would be desirable, but such compounds are not stable.
- Zinc telluride which has a direct band gap of 2.25 eV at room temperature, would be an ideal semiconductor for the intermediate level technology because of this large band gap.
- Zinc is readily substituted by magnesium in zinc telluride, with the band gap increasing to about 3.4 eV in MgTe (Optical Properties of Epitaxial Zn Mn Te and ZnMgTe films for a wide range of alloy compostions, X. Liu et al. , J. Appl. Phys., Vol. 91, No. 5, March 2002, 2859-2865; "Bandgap of Zn 1- JVIn x Te: nonlinear dependence on compostion and temperature", HC Mertins et al., Semicond Technol. 8 (1993) 1634-1638).
- a photovoltaic cell usually contains a p-type absorber and an n-type transparent layer of, for example, indium-tin oxide, fluorine-doped tin oxide, antimony-doped zinc oxide or aluminum-doped zinc oxide.
- x 0.01 to 0.7 metal halides of the metals germanium, tin, antimony, bismuth or copper in proportions of preferably 0.005 to 0.05 moles per mole of telluride are introduced.
- the partial replacement of tellurium in the semiconductor lattice by the electronegative halide ions causes the formation of the desired stable intermediate energy level in the bandgap.
- the object of the present invention is to provide a photovoltaic cell with high efficiency and high electric power.
- a further object of the present invention is to provide a photovoltaic cell with an alternative, thermodynamically stable, photovoltaically active semiconductor material, wherein the semiconductor material contains an intermediate level in the energy gap.
- a photovoltaic cell with a photovoltaically active semiconductor material wherein the photovoltaically active semiconductor material is a material of the formula (I), of the formula (II) or a combination thereof
- M n Te m and Me a M b are each a dopant in which M is at least one element selected from the group of silicon, germanium, tin, lead, antimony and bismuth and Me for at least one element selected from the group magnesium and zinc
- n 1 to 2
- m 0.5 to 4
- the invention further relates to a photovoltaically active semiconductor material of the formula (I), the formula (II) or a combination thereof, with
- the doping agent (M n Te m or Me a M b ) at least one compound selected from the group Si 3 Te 3 , GeTe, SnTe, PbTe, Sb 2 Te 3 , Bi 2 Te 3 , Mg 2 Si, Mg 2 Ge, Mg 2 Sn, Mg 2 Pb, Mg 3 Sb 2 , Mg 3 Bi 2 , ZnSb, Zn 3 Sb 2 and Zn 4 Sb 3 .
- Sb 2 Te 3 has a band gap of 0.3 eV as a pure substance. If ZnTe is doped with 2 mol% of Sb 2 Te 3 , an absorption at 0.8 eV is found in addition to the band gap of the ZnTe at 2.25 to 2.3 eV.
- the semiconductor materials used in the photovoltaic cell according to the invention have high Seebeck coefficients of up to 100 ⁇ V / degree with high electrical conductivity. This behavior shows that the new semiconductors can be activated not only visually, but also thermally, thus contributing to a better utilization of light quanta.
- the photovoltaic cell according to the invention has the advantage that the used photovoltaically active semiconductor material of the formula (I), the formula (II) or a combination thereof is thermodynamically stable. Furthermore, the photovoltaic cells according to the invention have high efficiencies of more than 15%, since an intermediate level in the energy level due to the dopants contained in the semiconductor material. bridge of the photovoltaically active semiconductor material is generated. Without an intermediate level, only such photons can lift electrons or charge carriers from the valence band into the conduction band, which have at least the energy of the energy gap. Higher energy photons also contribute to efficiency, with the excess of energy lost to the bandgap as heat. With the intermediate level present in the semiconductor material used for the present invention, which can be partially filled, more photons can contribute to the excitation.
- the photovoltaic cell of the present invention is preferably constructed to contain a p-type absorber layer of the material of the formula (I), the formula (II) or a combination thereof. Adjacent to this absorber layer of the p-type semiconductor material is an n-conducting contact layer which is as non-absorbent as possible, preferably an n-conducting transparent layer comprising at least one semiconductor material selected from the group consisting of indium tin oxide, fluorine doped tin oxide and antimony doped contains gallium-doped, indium-doped and aluminum-doped zinc oxide. Incident light generates a positive and a negative charge in the p-type semiconductor layer. The charges diffuse in the p-region. Only when the negative charge reaches the p-n interface can it leave the p-region. A current flows when the negative charge has reached the front contact attached to the contact layer.
- this comprises an electrically conductive substrate, a p-layer of the inventive semiconductor material of the formula (I) and / or (II) with a thickness of 0.1 to 20 .mu.m, preferably of 0 , 1 to 10 microns, more preferably from 0.3 to 3 microns, and an n-layer of an n-type semiconductor material having a thickness of 0.1 to 20 microns, preferably 0.1 to 10 microns, more preferably 0, 3 to 3 ⁇ m.
- the substrate is preferably a glass pane coated with an electrically conductive material, a flexible metal foil or a flexible metal sheet.
- the photovoltaic cell according to the invention preferably contains a layer of molybdenum or tungsten having a preferred thickness of between 0.1 and 2 .mu.m, which is used as barrier layer and for facilitating tion of the exit of the electrons in the absorber and is used as the back contact in the case of glass as a substrate.
- the invention further relates to a method for producing the photovoltaically active semiconductor material according to the invention and / or a photovoltaic cell according to the invention, comprising the steps:
- the layer formed from the semiconductor material of the formula Zn 1-x Te JVIg or ZnTe preferably has a thickness of 0.1 microns to 20, preferably from 0.1 to 10 .mu.m, particularly preferably from 0.3 to 3 microns.
- This layer is preferably produced by at least one deposition process selected from the group sputtering, electrochemical deposition and electroless deposition.
- Sputtering refers to the knocking out of clusters comprising about 10 to 10,000 atoms from an electrode sputtering target by accelerated ions and the deposition of the knocked-out material onto a substrate.
- the layers of the semiconductor material of the formula (I) and / or (II) produced according to the method according to the invention are particularly preferably produced by sputtering because sputtered layers have increased qualities.
- the electrochemical deposition of ZnTe for producing a layer and the subsequent doping of this layer with a dopant for producing a semiconductor material of the formula (I) and / or (II) are also suitable.
- the introduction of the doping metal during the synthesis of the zinc telluride in evacuated quartz vessels is particularly preferred.
- the quartz vessel is heated in an oven, first rapidly to about 400 ° C, because below the melting points of Zn and Te no reaction takes place.
- the temperature is increased more slowly with rates of 20 to 100 ° C / h up to 800 to 1200 ° C, preferably to 1000 to 1100 ° C.
- the formation of the solid state takes place.
- the time required for this is 1 to 100 hours, preferably 5 to 50 hours.
- the cooling takes place.
- the content of the quartz vessel is crushed under moisture exclusion to particle sizes of 0.1 to 1 mm and these particles are then reduced, for example in a ball mill to particle sizes of 1 to 30 microns, preferably 2 to 20 microns.
- sputtering targets are prepared by hot pressing at 300 to 1200 ° C, preferably 400 to 700 ° C and pressures of 5 to 500 MPa, preferably 20 to 200 MPa. The pressing times are from 0.2 to 10 h, preferably 1 to 3 h.
- a photovoltaically active semiconductor material and / or a photovoltaic cell is a sputtering target of the formula (Zn 1-x Mg x Te) i -y (M n Te m ) y and / or (ZnTe ) i. y (Me a M b ) y produced by
- a sputtering target of the formula Zn 1- JVIg x Te and / or ZnTe is prepared by a) reacting Zn, Te and optionally Mg in evacuated Quartz tubes at 800 to 1200 ° C, preferably at 1000 to 1100 ° C, within 1 to 100 h, preferably within 5 to 50 h, to obtain a material, b) grinding the material after cooling with substantial exclusion of atmospheric oxygen and Moisture to a powder with particle sizes of 1 to 30 .mu.m, preferably from 2 to 20 .mu.m, and c) hot pressing of the powder at temperatures of 300 to 1200 ° C, preferably from 400 to 700 ° C, at pressures of 5 to 500 MPa, preferably from 20 to 200 MPa at press times of 0.2 to 10 h, preferably from 1 to 3 h.
- the dopants M n Te m and Me a M b can be introduced after sputtering in the Zn 1 JVIg x Te and / or ZnTe.
- the material obtained in step a) is ground in step b) with the dopant M n Te m or Me a M b .
- part of the dopant can react with the zinc telluride in the form of a reaction grinding and be incorporated into the host lattice.
- the doped material of the formula (I) or (II) or combinations thereof according to the invention then forms during the hot pressing in step c)
- the photovoltaic cell according to the invention is completed by the method according to the invention.
- compositions given in the result table were prepared in evacuated quartz tubes by reaction of the elements in the presence of the doping metals.
- the elements were weighed in a purity better than 99.99% in quartz tubes, the residual moisture removed by heating in vacuo and the tubes melted in vacuo.
- the tubes were heated from room temperature to 1 100 ° C within 20 h and the temperature then left at 1100 ° C for 10 h. The oven was then switched off and allowed to cool.
- the Telluride so prepared were crushed in an agate mortar to powder with particle sizes below 30 microns. This powder was pressed at room temperature under a pressure of 3000 kp / cm 2 to 13 mm diameter disks.
- compositions from the result table are examples of combinations of semiconductor materials according to the invention of the formula (I) and of the formula (II) and can be described by the formula (III):
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Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102005047907A DE102005047907A1 (de) | 2005-10-06 | 2005-10-06 | Photovoltaische Zelle mit einem darin enthaltenen photovoltaisch aktiven Halbleitermaterial |
PCT/EP2006/066895 WO2007039562A2 (de) | 2005-10-06 | 2006-09-29 | Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial |
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Publication Number | Publication Date |
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EP1935031A2 true EP1935031A2 (de) | 2008-06-25 |
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EP06793915A Withdrawn EP1935031A2 (de) | 2005-10-06 | 2006-09-29 | Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial |
Country Status (9)
Country | Link |
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US (1) | US20080210304A1 (de) |
EP (1) | EP1935031A2 (de) |
JP (1) | JP4954213B2 (de) |
KR (1) | KR101312202B1 (de) |
CN (1) | CN100576571C (de) |
AU (1) | AU2006298686A1 (de) |
DE (1) | DE102005047907A1 (de) |
TW (1) | TW200733404A (de) |
WO (1) | WO2007039562A2 (de) |
Families Citing this family (7)
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US20120064352A1 (en) * | 2010-09-14 | 2012-03-15 | E. I. Du Pont De Nemours And Company | Articles comprising a glass - flexible stainless steel composite layer |
WO2012037242A2 (en) * | 2010-09-14 | 2012-03-22 | E. I. Du Pont De Nemours And Company | Glass-coated flexible substrates for photovoltaic cells |
CN102674696B (zh) * | 2011-03-17 | 2015-08-26 | 比亚迪股份有限公司 | 一种玻璃粉及其制备方法和一种导电银浆及其制备方法 |
US8361651B2 (en) * | 2011-04-29 | 2013-01-29 | Toyota Motor Engineering & Manufacturing North America, Inc. | Active material for rechargeable battery |
JP6546791B2 (ja) * | 2015-06-16 | 2019-07-17 | 地方独立行政法人東京都立産業技術研究センター | 光電変換装置 |
KR101778941B1 (ko) | 2015-10-02 | 2017-09-15 | 한국세라믹기술원 | 전기화학적 리튬화를 이용한 ZnSb 나노시트의 제조방법 |
CN115108831B (zh) * | 2022-06-15 | 2023-10-10 | 先导薄膜材料(广东)有限公司 | 一种碲化锌掺杂靶材及其制备方法与应用 |
Family Cites Families (12)
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FR2428921A1 (fr) * | 1978-06-12 | 1980-01-11 | Commissariat Energie Atomique | Procede de realisation de diodes electroluminescentes et/ou photodetectrices |
JPS5831584A (ja) * | 1981-08-19 | 1983-02-24 | Matsushita Electric Ind Co Ltd | 太陽電池の製造方法 |
US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
JP2771414B2 (ja) * | 1992-12-28 | 1998-07-02 | キヤノン株式会社 | 太陽電池の製造方法 |
JPH088461A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | 発光受光素子 |
CN1146060C (zh) * | 1996-06-19 | 2004-04-14 | 松下电器产业株式会社 | 光电子材料、使用该材料的器件 |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
AU8649798A (en) * | 1997-10-24 | 1999-05-17 | Sumitomo Special Metals Co., Ltd. | Silicon based conductive material and process for production thereof |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
JP2003179243A (ja) * | 2001-08-31 | 2003-06-27 | Basf Ag | 光電池活性材料およびこれを含む電池 |
US7605327B2 (en) * | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
CN101853889B (zh) * | 2003-12-01 | 2012-07-04 | 加利福尼亚大学董事会 | 用于光伏器件的多频带半导体组合物 |
-
2005
- 2005-10-06 DE DE102005047907A patent/DE102005047907A1/de not_active Withdrawn
-
2006
- 2006-09-29 CN CN200680036753A patent/CN100576571C/zh not_active Expired - Fee Related
- 2006-09-29 AU AU2006298686A patent/AU2006298686A1/en not_active Abandoned
- 2006-09-29 US US12/088,859 patent/US20080210304A1/en not_active Abandoned
- 2006-09-29 KR KR1020087010584A patent/KR101312202B1/ko not_active IP Right Cessation
- 2006-09-29 WO PCT/EP2006/066895 patent/WO2007039562A2/de active Application Filing
- 2006-09-29 JP JP2008533986A patent/JP4954213B2/ja not_active Expired - Fee Related
- 2006-09-29 EP EP06793915A patent/EP1935031A2/de not_active Withdrawn
- 2006-10-05 TW TW095137038A patent/TW200733404A/zh unknown
Non-Patent Citations (1)
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See references of WO2007039562A2 * |
Also Published As
Publication number | Publication date |
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CN100576571C (zh) | 2009-12-30 |
JP2009512181A (ja) | 2009-03-19 |
TW200733404A (en) | 2007-09-01 |
WO2007039562A3 (de) | 2008-01-17 |
AU2006298686A1 (en) | 2007-04-12 |
DE102005047907A1 (de) | 2007-04-12 |
CN101278406A (zh) | 2008-10-01 |
KR101312202B1 (ko) | 2013-09-27 |
WO2007039562A2 (de) | 2007-04-12 |
KR20080066756A (ko) | 2008-07-16 |
JP4954213B2 (ja) | 2012-06-13 |
US20080210304A1 (en) | 2008-09-04 |
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