EP1913637A1 - Detecteur a ecran plat - Google Patents

Detecteur a ecran plat

Info

Publication number
EP1913637A1
EP1913637A1 EP06792696A EP06792696A EP1913637A1 EP 1913637 A1 EP1913637 A1 EP 1913637A1 EP 06792696 A EP06792696 A EP 06792696A EP 06792696 A EP06792696 A EP 06792696A EP 1913637 A1 EP1913637 A1 EP 1913637A1
Authority
EP
European Patent Office
Prior art keywords
substrate
photodetector
electrode
panel detector
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06792696A
Other languages
German (de)
English (en)
Inventor
Christoph Brabec
Georg Wittmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1913637A1 publication Critical patent/EP1913637A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60

Definitions

  • the invention relates to a flat-panel detector with a substrate having a transistor matrix and a photodetector.
  • a flat-panel detector With a flat-panel detector, light incident on the flat-panel detector is converted into electrical signals, which can be converted into an image data record with a suitable evaluation device. The image associated with the image data set can be visualized with a viewing device.
  • Common flat panel detectors are a combination of a pixilated photodetector and a transistor matrix.
  • the pixilated photodetector essentially comprises two electrodes and a semiconductor layer arranged between the two electrodes.
  • One of the electrodes is structured such that it comprises a plurality of mutually isolated part electrodes, each associated with a pixel of an image to be recorded with the flat-panel detector.
  • the light distribution associated with the image penetrates the electrode which faces the light distribution and is therefore made of an at least semitransparent material. Furthermore, the semiconductor layer in conjunction with the two electrodes converts the light distribution into electrical signals which are applied to the individual sub-electrodes of the structured electrode.
  • the transistor matrix is embedded in a substrate.
  • Each of the individual transistors of the transistor matrix is in turn associated with one of the pixels of the image to be recorded with the flat-panel detector and is in each case electrically connected to one of the partial electrodes of the structured electrode.
  • the transistors of the transistor matrix are connected to a control driven device and read out. The read signals are forwarded to the evaluation device.
  • Thin-film transistors used. However, if a transistor matrix with transistors based on another transistor technology is used, the process for applying the planar photodetector must be adapted to this transistor technology.
  • the object of the invention is therefore to carry out a flat-panel detector in such a way that its manufacture is simplified even when using different substrates comprising the transistor matrix.
  • a flat-panel detector comprising a substrate with a transistor matrix, a photodetector with a structured first electrode comprising a plurality of partial electrodes, with a second electrode
  • Electrode and having a photoactive layer disposed between the two electrodes, and a passivation layer disposed between the first electrode and the substrate.
  • the basic idea of the flat-panel detector according to the invention is thus not to construct the photodetector directly on the substrate with the transistor matrix, but first of all to provide the substrate with the passivation layer and to build up the photodetector thereon.
  • the passivation layer spatially separates the photodetector from the substrate. Thereby, it is possible that the photodetector is arranged vertically above the individual transistors, whereby the surface of the Photodetector is enlarged. The fill factor of the photodetector can thus be increased.
  • the vertical structure also capacitive couplings between the transistors of the transistor matrix and the structured first electrode and / or the electrical conductor tracks can be reduced.
  • substrates with transistor matrices FET panels from the LCD industry are preferably used.
  • the passivation layer Due to the passivation layer, it is possible to create a surface that is at least largely independent of the substrate used or of the technology used for the transistor matrix for the construction of the photodetector.
  • the passivation layer therefore makes it possible to carry out the photodetector at least largely independently of the substrate or the transistor matrix used.
  • the surface of the substrate need not be compatible with the chemistry of the photodetector.
  • the passivation layer is preferably applied to the substrate by means of printing techniques.
  • the flat-panel detector according to the invention can be produced particularly inexpensively.
  • the photodetector can then be applied particularly easily to the passivation layer if, according to a variant of the flat-panel detector according to the invention, the passivation layer is planarized on the side facing the first electrode and / or structurable, in particular photostructurable.
  • the passivation layer can be provided particularly easily with vias, with which the individual subelectrodes of the first electrode are contacted by the passivation layer, each with a transistor of the substrate having the transistor matrix.
  • a via is a vertical opening filled with an electrically conductive material that electrically interconnects different layers.
  • an inorganic semiconductor material is usually used for the photoactive layer.
  • the photodetector is an organic photodetector whose photoactive layer comprises an organic semiconductor material.
  • Organic photodetectors can be produced relatively simply by applying the organic semiconductor layer from the solution using printing techniques.
  • Semiconductor materials for organic photodetectors include photoresists, PBO, BCB, etc.
  • organic photodetectors have relatively high compatibility with various transistor matrix transistor technologies.
  • Various technologies of the transistor matrix include a-Si, LTPoIySi, pentacene, polymer, ZnO or chalcopyrite FETs.
  • the corresponding semiconductors are processed from the solution.
  • An organic photodetector generally comprises an electron / hole blocking layer in addition to the photoactive layer comprising, for example, P3HT / PCBM, CuPc / PTCBI, ZNPC / C60, conjugated polymer components or fullerene components. Electron / hole blocking layers are known from organic LED technology. A suitable organic material for the electron blocking layer is e.g. TFB.
  • a critical parameter for the image recognition is the so-called dark current of a photodetector.
  • FIG. 1 to 4 illustrate the manufacture of a flat panel detector oFD according to the invention with an organic photodetector.
  • FIG. 1 shows a detail of a substrate 1 with a transistor matrix comprising a plurality of transistors 2.
  • the individual transistors 2 in the case of the present exemplary embodiment are a-Si FETs which have been produced by means of thin-film technology.
  • Each of the transistors 2 is associated with a pixel of one of the images to be taken with the flat panel detector.
  • a passivation layer 3 shown in FIG. 2 is subsequently applied.
  • the passivation layer 3 which comprises a substantially electrically insulating material, was applied to the substrate 1 by means of known printing techniques, then structured as shown in FIG. 2 by means of photo techniques and finally planarized. The structuring gives the passivation layer 3
  • a planar electrode 5 shown in FIG. 3 is applied to the passivation layer 3 and is structured in such a way that it comprises a plurality of subelectrodes 6 arranged in the form of a matrix.
  • Each of the sub-electrodes 6 is electrically connected via the vias 4 by the passivation layer 3, each with a transistor 2 of the transistor matrix of the substrate 1.
  • an electron-blocking layer 7 made of an organic material is applied to the structured electrode 5 in a planar manner, for example by spin-coating, doctoring or printing techniques.
  • organic material in the case of the present the embodiment TFB used.
  • the electron blocking layer 7 is then provided with a photoactive layer 8 of an organic semiconductor material, in the case of the present embodiment P3HT / PCBM.
  • a further planar electrode 9 is then applied, which in turn is provided with a transparent protective layer 10.
  • the electrode 9 is made of an at least semi-transparent material.
  • the present invention has been described in terms of a preferred embodiment, the invention is not limited to these, but modifiable in many ways.
  • substrates with other transistors than the a-Si FETs shown in FIGS. 1 to 5 can also be used.
  • the flat panel detector of the present invention also need not be an organic flat panel detector, i. the electron blocking layer 7 and the photoactive layer 8 may also be made of inorganic materials, e.g. Silicon, be prepared.

Abstract

La présente invention concerne un détecteur à écran plat (oFD) comprenant un substrat (1) avec une matrice de transistor (2), un photodétecteur et une couche de passivation (3). Le photodétecteur comprend une première électrode structurée (5) qui présente plusieurs électrodes partielles (6), une seconde électrode (9) et une couche photoactive (8) située entre les deux électrodes (6, 9). La couche de passivation (3) se trouve entre le substrat (1) comprenant la matrice de transistor (2) et la première électrode (5).
EP06792696A 2005-08-08 2006-08-04 Detecteur a ecran plat Withdrawn EP1913637A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005037290A DE102005037290A1 (de) 2005-08-08 2005-08-08 Flachbilddetektor
PCT/EP2006/065063 WO2007017470A1 (fr) 2005-08-08 2006-08-04 Detecteur a ecran plat

Publications (1)

Publication Number Publication Date
EP1913637A1 true EP1913637A1 (fr) 2008-04-23

Family

ID=37076229

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06792696A Withdrawn EP1913637A1 (fr) 2005-08-08 2006-08-04 Detecteur a ecran plat

Country Status (4)

Country Link
US (1) US20090140238A1 (fr)
EP (1) EP1913637A1 (fr)
DE (1) DE102005037290A1 (fr)
WO (1) WO2007017470A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008042859A2 (fr) 2006-09-29 2008-04-10 University Of Florida Research Foundation, Inc. Procédé et appareil de détection et de présentation d'ir.
DE102007025975A1 (de) 2007-06-04 2008-12-11 Siemens Ag Organischer Photodetektor mit einstellbarer Transmission, sowie Herstellungsverfahren dazu
DE102007043648A1 (de) 2007-09-13 2009-03-19 Siemens Ag Organischer Photodetektor zur Detektion infraroter Strahlung, Verfahren zur Herstellung dazu und Verwendung
DE102008029782A1 (de) 2008-06-25 2012-03-01 Siemens Aktiengesellschaft Photodetektor und Verfahren zur Herstellung dazu
DE102008029780A1 (de) 2008-06-25 2009-12-31 Siemens Aktiengesellschaft Vorrichtung zur Durchleuchtung von Gegenständen wie Gepäckstücken und/oder Paketen
DE102008049702A1 (de) 2008-09-30 2010-04-08 Siemens Aktiengesellschaft Messgerät zur Messung der Strahlendosis und Verwendung davon
CA2800549A1 (fr) 2010-05-24 2011-12-01 University Of Florida Research Foundation, Inc. Procede et appareil destines a fournir une couche de blocage de charge sur un dispositif de conversion ascendante a infrarouge
US9373666B2 (en) 2011-02-25 2016-06-21 The Regents Of The University Of Michigan System and method of forming semiconductor devices
JP6502093B2 (ja) 2011-06-30 2019-04-17 ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド 利得を伴って赤外線放射を検出する方法および装置
WO2014178923A2 (fr) * 2013-01-25 2014-11-06 University Of Florida Research Foundation, Inc. Nouveau capteur d'image à infrarouges utilisant un détecteur optique pbs par dissolution
KR20180018660A (ko) 2015-06-11 2018-02-21 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 단분산, ir-흡수 나노입자, 및 관련 방법 및 장치

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DE4227096A1 (de) * 1992-08-17 1994-02-24 Philips Patentverwaltung Röntgenbilddetektor
WO1996034416A1 (fr) * 1995-04-28 1996-10-31 Sunnybrook Hospital Dispositif d'imagerie par rayons-x a matrice active
WO1999009603A1 (fr) * 1997-08-15 1999-02-25 Uniax Corporation Diodes organiques a photosensibilite commutable
CA2241779C (fr) * 1998-06-26 2010-02-09 Ftni Inc. Detecteur d'image radiologique indirecte pour utilisation avec la radiologie
JP2003060178A (ja) * 2001-08-10 2003-02-28 Konica Corp 放射線画像検出器
DE102004036734A1 (de) * 2004-07-29 2006-03-23 Konarka Technologies, Inc., Lowell Kostengünstige organische Solarzelle und Verfahren zur Herstellung
US7189991B2 (en) * 2004-12-29 2007-03-13 E. I. Du Pont De Nemours And Company Electronic devices comprising conductive members that connect electrodes to other conductive members within a substrate and processes for forming the electronic devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007017470A1 *

Also Published As

Publication number Publication date
US20090140238A1 (en) 2009-06-04
DE102005037290A1 (de) 2007-02-22
WO2007017470A1 (fr) 2007-02-15

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