Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
  • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
  • H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
  • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
  • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
  • Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
  • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
  • Y10T428/2991—Coated
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]

Definitions

• the invention relates to a network of particles, for example nanoparticles, and a method for producing such a network.
• the organization of particles on a periodic network is sought in many applications, such as for example ultra-high density magnetic information carriers (ferromagnetic nanoparticles), memories based on semiconductor nanoparticles, networks of luminescent nanoparticles or the formation of catalytic or reaction sites of very small dimensions.
• ultra-high density magnetic information carriers ferromagnetic nanoparticles
• memories based on semiconductor nanoparticles
• networks of luminescent nanoparticles or the formation of catalytic or reaction sites of very small dimensions.
• each lithographed structure By choosing dimensions of the lithographed structures smaller than the distance separating conventionally two defects of the network of particles, one obtains within each lithographed structure an assembly of particles in the form of a network which presents no defect if the average distance between defects, which is a statistical data, is respected in this assembly.
• the invention therefore aims in particular at a solution for the organization of a particle network that ensures the best regularity of the network, and also over great distances.
• the invention thus proposes an array of particles arranged on a substrate having a property allowing interaction of the substrate and particles, characterized in that said property is periodically modulated in a first direction by allowing a substantial interaction between each of the particles and its particles. neighbors in the first direction.
• a second property allowing an interaction of the substrate and particles, possibly identical to said property, can also be modulated in a second direction by allowing a substantial interaction between each of the particles and its neighboring particles in the second direction.
• the great regularity of the aforementioned network is thus ensured in both directions of the face of the substrate.
• the network can in this case be square or hexagonal. Alternatively, it can be hexagonal.
• said property can be modulated according to the first direction with a period adapted to said step, that is, that is, for example, said period is substantially equal to said step or a multiple of said step.
• the particle network can be organized in correspondence with the modulation of the property presented by the substrate.
• At least some particles are formed by a central core covered by a shell.
• the shell participates in the substrate - particle interaction and / or the particle - particle interaction.
• the shell then makes it possible to facilitate the networking of the central cores.
• the shell can be deformed to allow the adaptation of the period of organization of the network. Said property is for example linked to the topography of the substrate.
• the interaction of the substrate and the particles may also be a remote interaction, for example of the magnetic or electrical type.
• the particle array may not be limited to two dimensions, but may also extend in a direction substantially perpendicular to the surface of the substrate.
• L L ⁇ ijkernént invention provides a " ⁇ method for producing an array of particles, characterized in that it comprises a step of deposition of particles, capable of self-organization with a given pitch along a first direction, on a substrate having a property allowing interaction of the substrate and particles and modulated according to the first direction with a period adapted to said step.
• the particles may be formed prior to their deposition on the substrate. Thanks to this method, a substantial interaction remains between each of the particles and its neighboring particles and thus the effect mentioned above is obtained.
• the substrate may also have a second property allowing an interaction of the substrate and the particles (possibly identical to said property) modulated according to the second direction with a period adapted to the second step.
• the method may comprise a patterning step on the substrate. Substrate - particle interactions are thus performed, related to the topography of the substrate.
• the patterning step may comprise a step of revealing a dislocation network.
• the patterning step may be performed by lithography or nanoimprint technique.
• the method may also include a material deposition step for developing said modulated property or determining the amplitude of the modulations of said modulated property.
• the substrate - particle interactions are thus generated, or refined, by the deposited material.
• FIG. 1 shows a top view of a substrate in a first embodiment of the invention
• FIG. 3 represents a network of particles arranged on the substrate of FIG. 1 according to the first embodiment of the invention
• FIG. 4 shows a section according to section B-B of Figure 3;
• Figure 5 shows the particle array of Figure 3 at a defect in the substrate
• Fig. 6 shows the particle array of Fig. 3 at a defect therein
• FIG. 7 represents a sectional view of a substrate according to a second embodiment of the invention
• FIG. 8 represents an array of particles arranged on the substrate of FIG. 7;
• FIG. 9 represents a network composed of particles of two different types on the substrate of FIG. 7;
• FIG. 10 represents a section of a substrate in a third embodiment of the invention.
• FIG. 11 represents an array of particles arranged on the substrate of FIG. 10;
• FIG. 12 represents an alternative embodiment of the substrate of FIG. 3;
• FIG. 13 represents an array of particles deposited on the substrate of FIG. 12;
• FIG. 14 represents an alternative embodiment of the network represented in FIG. 9;
• FIG. 15 represents a view from above of the network of particles represented in FIG. 14.
• monodisperse FePt alloy nanoparticles which each have a diameter of 6.3 nm and form a network of contiguous particles are used as particles. as detailed in the following. Alternatively, it could be a network of non-iointive particles
• Figure la-i ⁇ represents "sdiêmatiqu ⁇ rnent a substrate for receiving the particles.
• the surface of the substrate 2 has a network of grooves (or grooves) formed by a first set of parallel grooves 4 between them according to a first direction and a second set of grooves 6 parallel to each other in a second direction and perpendicular to the grooves 4 of the first set.
• the distance between the grooves 4 of the first set is identical to the distance between the grooves 6 of the second set and the grooves 4, 6 thus form a square network.
• the grooves may form a rectangular network.
• the distance separating two adjacent parallel grooves 4, 6 is set at 18.9 nm (according to a technique described below), which corresponds to three times the pitch of the joined network formed. by FePt particles with a diameter of 6.3 nm.
• distances between adjacent parallel grooves could be used, for example a distance of 6.3 nm equal to the pitch of the particle network in the case studied here, or a distance of 31.5 nm corresponding to five times the pitch of the network of these same particles.
• a substrate 2 having grooves in the form of a square lattice of this type can be obtained for example by bonding a silicon-on-insulator (or SOI) substrate exhibiting a silicon-on-insulat ion substrate.
• silicon layer about 10 nm thick on a solid silicon substrate having a thickness of the order of 500 microns, with relative rotation of the crystalline axes of the two silicon surfaces (1, 0,0) to be assembled, then for example by revealing the dislocation network thus formed at the interface of the substrates by means of chemical etching.
• the pitch ⁇ of the groove network (that is to say the distance between adjacent parallel grooves) is connected to the angular rotation ⁇ between
• the angle ⁇ of the disorientation is used between the SOI and solid silicon of 1, 164 °.
• an angle of 3.493 ° is used to obtain a pitch or groove grating period of 6.3 nm, and an angle of 0.698 ° to obtain a period of 31.5 nm.
• the distance between parallel parallel grooves obtained is valid to within 0.25 nm in the last case evoked and with a precision less than 0.1 nm in the first two cases.
• the SOI substrate is removed for example by chemical-mechanical polishing using the silicon oxide layer as a coating layer. 'stop.
• the silicon oxide layer is then removed, for example, with a solution of hydrofluoric acid (HF).
• HF hydrofluoric acid
• the thin silicon layer of about 10 nm is then thinned by means of a chemical attack sensitive to the stresses induced by the dislocations, such as, for example, a modified version of the Yang type attack (HF / Cr ⁇ 3 / H 2 ⁇ ). ) or a modified version of the Dash-type attack (HF / HNO 3 / H 2 O) as indicated in the second-mentioned article above.
• a metal for example gold
• a metal for example gold
• the network of protuberances 34 is then revealed, for example by ionic abrasion.
• a network of grooves is produced as described previously with reference to FIGS. 1 and 2, and then deposited in these grooves a material whose abrasion speed under ion beam is smaller than that of the substrate (using example a metal like gold on a silicon substrate).
• the protuberances are then formed by ionic abrasion.
• the FePt nanoparticles 8 are deposited on the substrate where they form a square lattice whose structure is determined by the combination of the self-organization of the particles (due to the interactions between particles, here in joined contact between these) and the location of at least a portion of the particles 8 at a preferred site of the substrate 2 (substrate-particle interaction) formed here by the grooves 4, 6 (or furrows) of the substrate 2 as illustrated in the figures 3 and 4 (or by the protuberances 34 in the variant envisaged in FIGS. 12 and 13, where the substrate-particle interaction under consideration generates a preferential localization of part of the particles 38 on the protuberances 34).
• Such a structure is for example obtained by pre-dispersion of nanoparticles-8 "" FePt "in” ⁇ ne hexane solution, deposit on the substrate 2 of this solution and then slow evaporation of hexane.
• the pitch of the square network of grooves 4, 6 present on the surface of the substrate 2 is substantially equal to the pitch of the self-organized network of nanoparticles 8, or to an integer multiple thereof, such that the combined action of self-organization between particles 8 and the tendency to locate a portion of the particles 8 on the grooves 4, 6 leads to the organization of a network of particles with a structure substantially identical to the structure of the network that these particles would have adopted naturally locally on a substrate without modulation.
• the grooves 4, 6 of the substrate 2 (or the protuberances 34 if any) thus make it possible to ensure the regularity of the self-organized structure on a large scale.
• FIG. 5 shows a network of nanoparticles 8 having the structure just described and represented in FIG. 4, in which the substrate 2 has a defect 3, in this case the absence of a groove 4 .
• the particle 7 located the right of the fault 3 of the substrate 2 is correctly located in the network despite the groove fault.
• FIG. 6 shows a network of nanoparticles of the type shown in FIG. 4, in which certain particles 9 have a position slightly offset with respect to their theoretical position in the network (which is shown schematically in Figure 6 by a slightly smaller size for these particles 9), which would have led in the absence of the substrate 2 to a phase shift in the particle network.
• the neighboring particle of the particles 9 introducing the offset is located precisely at the location determined by this groove 4, without phase shift relative to the particle located in line with the neighboring groove.
• FIGS. 7 to 9 represent a second embodiment of embodiment of the invention which will now be described.
• the raw substrate 12 comprises a square network of grooves obtained in a similar manner to the substrate described in the first embodiment.
• This substrate 12 is deposited in the grooves or between them of a material 4 having a particular affinity with first particles 18 to be organized (as described in detail below).
• the surface of the substrate intended to receive the particles thus has a square network of regions formed of this material, for example strips 14; it may be noted that the surface of the substrate thus obtained may possibly in this case be generally flat, as shown in FIG. 7.
• a set of particles 18 of a first type which have a particular affinity with the material 14 deposited in the grooves of the raw substrate 12 is deposited on the substrate which has just been described.
• the pitch of the self-organized network of particles is such that that the pitch of the square network of strips of material 14 is adapted to it, that is to say that the pitch of the square network of strips of material 14 is approximately equal to the pitch of the particle network of the first type 18 auto ⁇ organized, or an integer multiple of it.
• the affinity of the material 14 and the particles of the first type 18 are placed at the preferential location determined by the strips of material 14.
• the substrate interaction - particle (here matter 14 - particle 18) is however of an amplitude such that it does not call into question the location of the rest of the particles at the locations determined by the self-organization of the particle network, that is to say say by the interactions between particles.
• the structure shown in FIG. 8 is thus obtained.
• the material t4 " may for example be platinum having an affinity for particles having an amine function at the surface.
• the particle network of the first type 18 as a substrate for the deposition and networking of particles of a second type optionally in accordance with the invention, as is schematically shown in FIG. 9.
• the particle network of the first type 18 may be used as an etching mask (or deposition mask according to another variant), in order to obtain a second modulation of the substrate for the deposition of another network of particles.
• the network of particles of the first type 18 makes it possible to locate particles of a second type 17 in a network whose pitch is fixed by the size of the particles of the first type 18.
• a third embodiment is shown in Figures 10 and 11.
• a material deposit 23 is produced on a substrate 22 having a pattern of grooves having a crenellated shape in section.
• the deposition of material 23 is here carried out in order to reduce the amplitude of the periodic variations of the topography of the substrate.
• the substrate-particle interaction is carried out by other properties of the latter than its topography
• the period of the patterns (that is to say of the topography of the raw substrate), which is not modified by the deposition of material 23, is adapted to the pitch of the particle network which it must to receive.
• the particles consist of a core 28 coated with a shell 29.
• the core 28 is for example the active element whose network structure is desired, whereas the shell 29 is intended to facilitate the formation of the network, for example by generating a particle interaction - specific particle and / or a specific substrate-particle interaction (Le., according to the schematic representation of FIG. 11, an adaptation of the size of the particle network to the grounds of the substrate 22, 23), or the generation of a certain elasticity in the particle network allowing a slight disagreement between the period of the pattern presented by the substrate and the period of self-organization of the particle network.
• the substrate-particle interaction may be a remote interaction.
• the embodiments which have just been described are only possible examples of embodiment of the invention. The various characteristics of these embodiments as well as those given as an alternative may in particular be combined differently from the examples given above.

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• 2004
  • 2004-11-09 FR FR0411916A patent/FR2877662B1/fr not_active Expired - Fee Related
• 2005
  • 2005-11-03 JP JP2007539605A patent/JP2008520444A/ja active Pending
  • 2005-11-03 US US11/718,859 patent/US7985469B2/en not_active Expired - Fee Related
  • 2005-11-03 WO PCT/FR2005/002728 patent/WO2006051186A2/fr active Application Filing
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