EP1798596A3 - Positiv arbeitende Photoresistzusammensetzung - Google Patents

Positiv arbeitende Photoresistzusammensetzung Download PDF

Info

Publication number
EP1798596A3
EP1798596A3 EP06256335A EP06256335A EP1798596A3 EP 1798596 A3 EP1798596 A3 EP 1798596A3 EP 06256335 A EP06256335 A EP 06256335A EP 06256335 A EP06256335 A EP 06256335A EP 1798596 A3 EP1798596 A3 EP 1798596A3
Authority
EP
European Patent Office
Prior art keywords
photoresist composition
positive photoresist
divalent linking
linking group
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP06256335A
Other languages
English (en)
French (fr)
Other versions
EP1798596B1 (de
EP1798596A2 (de
Inventor
Hiromasa Silicone-Electronics Materials Research Center Yamaguchi
Hideto New Functional Materials Research Center Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of EP1798596A2 publication Critical patent/EP1798596A2/de
Publication of EP1798596A3 publication Critical patent/EP1798596A3/de
Application granted granted Critical
Publication of EP1798596B1 publication Critical patent/EP1798596B1/de
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Polyethers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
EP06256335A 2005-12-13 2006-12-13 Positiv arbeitende Photoresistzusammensetzung Ceased EP1798596B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005358960A JP4553140B2 (ja) 2005-12-13 2005-12-13 ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
EP1798596A2 EP1798596A2 (de) 2007-06-20
EP1798596A3 true EP1798596A3 (de) 2011-02-02
EP1798596B1 EP1798596B1 (de) 2012-08-01

Family

ID=37808073

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06256335A Ceased EP1798596B1 (de) 2005-12-13 2006-12-13 Positiv arbeitende Photoresistzusammensetzung

Country Status (5)

Country Link
US (1) US7378215B2 (de)
EP (1) EP1798596B1 (de)
JP (1) JP4553140B2 (de)
KR (1) KR101260076B1 (de)
TW (1) TWI427407B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4903096B2 (ja) * 2007-07-24 2012-03-21 東京応化工業株式会社 ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP5112772B2 (ja) * 2007-07-24 2013-01-09 東京応化工業株式会社 液晶素子製造用ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP2009151266A (ja) * 2007-11-29 2009-07-09 Jsr Corp ポジ型感放射線性樹脂組成物
WO2009114572A2 (en) * 2008-03-11 2009-09-17 3M Innovative Properties Company Phototools having a protective layer
KR101585996B1 (ko) 2009-04-20 2016-01-18 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 미세 패턴의 형성방법 및 반도체 장치의 제조방법
US8815747B2 (en) 2010-06-03 2014-08-26 Micron Technology, Inc. Methods of forming patterns on substrates
JP5729312B2 (ja) * 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
US9330914B2 (en) 2013-10-08 2016-05-03 Micron Technology, Inc. Methods of forming line patterns in substrates
JP6743692B2 (ja) * 2015-03-27 2020-08-19 東レ株式会社 感光性樹脂組成物、感光性シート、半導体装置および半導体装置の製造方法
JP6507061B2 (ja) * 2015-08-04 2019-04-24 東芝メモリ株式会社 基板処理方法
WO2024038814A1 (ja) * 2022-08-19 2024-02-22 Ａｇｃ株式会社 ポジ型感光性樹脂組成物、隔壁および光学素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09241381A (ja) * 1996-03-06 1997-09-16 Shin Etsu Chem Co Ltd 含フッ素有機ケイ素化合物及びその製造方法
EP1324134A2 (de) * 2001-12-27 2003-07-02 Shin-Etsu Chemical Co., Ltd. Resistzusammensetzung und Musterübertragungsverfahren
EP1724332A1 (de) * 2005-05-20 2006-11-22 Shin-Etsu Chemical Co., Ltd. Fluorierte Organosiliziumverbindungen und fluorchemische oberflächenaktive Stoffe

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178242A (en) 1981-04-27 1982-11-02 Konishiroku Photo Ind Co Ltd Photosensitive lithographic plate
JPS59142538A (ja) 1983-02-04 1984-08-15 Tokyo Ohka Kogyo Co Ltd 感光性組成物
JPH0322619A (ja) 1989-06-20 1991-01-31 Nec Corp ディジタル論理回路
JP3945556B2 (ja) 1998-12-17 2007-07-18 東京応化工業株式会社 液晶素子製造用ポジ型ホトレジスト塗布液及びそれを用いた基材
JP4099656B2 (ja) * 2001-12-27 2008-06-11 信越化学工業株式会社 レジスト材料及びパターン形成方法
TWI247967B (en) * 2003-06-19 2006-01-21 Chisso Corp Positive radiation-sensitive polymer composition, film using the composition, and element using the composition
JP4152852B2 (ja) * 2003-09-30 2008-09-17 東京応化工業株式会社 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09241381A (ja) * 1996-03-06 1997-09-16 Shin Etsu Chem Co Ltd 含フッ素有機ケイ素化合物及びその製造方法
EP1324134A2 (de) * 2001-12-27 2003-07-02 Shin-Etsu Chemical Co., Ltd. Resistzusammensetzung und Musterübertragungsverfahren
EP1724332A1 (de) * 2005-05-20 2006-11-22 Shin-Etsu Chemical Co., Ltd. Fluorierte Organosiliziumverbindungen und fluorchemische oberflächenaktive Stoffe

Also Published As

Publication number Publication date
EP1798596B1 (de) 2012-08-01
US20070134591A1 (en) 2007-06-14
KR20070062926A (ko) 2007-06-18
TW200736825A (en) 2007-10-01
JP2007163756A (ja) 2007-06-28
EP1798596A2 (de) 2007-06-20
KR101260076B1 (ko) 2013-05-02
JP4553140B2 (ja) 2010-09-29
US7378215B2 (en) 2008-05-27
TWI427407B (zh) 2014-02-21

Similar Documents

Publication Publication Date Title
JP2005527716A5 (de)
TW200736825A (en) Positive photoresist composition
US7160850B2 (en) Compositions of monomeric surfactants
JP2010522758A5 (de)
TWI456352B (zh) 圖案形成方法
JP2005527677A5 (de)
WO2010094019A3 (en) Novel alkyl perfluoroalkene ethers and uses thereof
ATE432954T1 (de) Fluorpolyetherverbindung
WO2006107082A3 (en) Surface modifier and its use
EP2031007A3 (de) Norbornenpolymere, Zusammensetzungen davon und solche Zusammensetzungen verwendende Lithographieverfahren
KR20140008296A (ko) 하지제 및 블록 코폴리머를 함유하는 층의 패턴 형성 방법
WO2002018457A1 (en) Curable fluoropolymer, curable resin composition containing the same, and antireflection film
TW201640225A (zh) 感光性樹脂組成物、樹脂膜之製造方法、有機半導體元件之製造方法及含氟聚合物
EP2370269A1 (de) Musterbildungsprozess
EP1975705A3 (de) Positive Resistzusammensetzung und Verfahren zur Strukturformung
JPWO2019049753A1 (ja) 含フッ素エーテル化合物、組成物および物品
EP2011831A3 (de) Beschichtungszusammensetzung und Beschichtung daraus mit Wassertropfengleitfunktion
CN106662825A (zh) 用于移除光刻胶的剥离剂组合物以及使用其剥离光刻胶的方法
KR100857337B1 (ko) 리소그래피용 린스액
JP5810114B2 (ja) 撥液性処理剤、撥液性膜、撥水性領域と親水性領域とを有する部材及びその製造方法、並びに機能性材料のパターンが形成された部材の製造方法
EP1833863B1 (de) Fluorchemische polymere tenside
JP2009517528A5 (de)
EP1524288A3 (de) Sulfoniertes Polymer mit einem Nitrilgruppen enthaltenden hydrophoben Block und feste Polymerelektrolyte
EP2287270A3 (de) Zusammensetzung mit fluoriertem Amid
EP1652844A3 (de) Fluoriertes Monomer mit zyklischer Struktur, Herstellungsverfahren, Polymer, Photoresistzusammensetzung, Musterbildungsverfahren

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

17P Request for examination filed

Effective date: 20110714

AKX Designation fees paid

Designated state(s): DE FR GB

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIN1 Information on inventor provided before grant (corrected)

Inventor name: KATO, HIDETO

Inventor name: YAMAGUCHI, HIROMASA

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602006031050

Country of ref document: DE

Effective date: 20120927

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20130503

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602006031050

Country of ref document: DE

Effective date: 20130503

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 10

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 11

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20181127

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20181212

Year of fee payment: 13

Ref country code: FR

Payment date: 20181120

Year of fee payment: 13

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602006031050

Country of ref document: DE

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20191213

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191213

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200701

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191231