EP1794600B1 - Sonde de mesure de caracteristiques d'un courant d'excitation d'un plasma, et reacteur a plasma associe. - Google Patents

Sonde de mesure de caracteristiques d'un courant d'excitation d'un plasma, et reacteur a plasma associe. Download PDF

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Publication number
EP1794600B1
EP1794600B1 EP05789496.6A EP05789496A EP1794600B1 EP 1794600 B1 EP1794600 B1 EP 1794600B1 EP 05789496 A EP05789496 A EP 05789496A EP 1794600 B1 EP1794600 B1 EP 1794600B1
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EP
European Patent Office
Prior art keywords
probe
voltage
current
plasma
sensor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP05789496.6A
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German (de)
English (en)
French (fr)
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EP1794600A1 (fr
Inventor
Sébastien DINE
Jacques Jolly
Jean Bernard Pierre Larour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Original Assignee
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
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Publication of EP1794600A1 publication Critical patent/EP1794600A1/fr
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means

Definitions

  • the present invention relates to a device for measuring current and electrical voltage on the power supply circuit of a plasma (this text will be known as a "probe" measuring device).
  • the document WO / 02054091 describes a capacitively coupled RF voltage probe.
  • the invention applies to the measurement of current and electrical voltage in a plasma reactor using one or more variable voltage or current electrical sources.
  • the invention makes it possible to know, in real time and without disturbing the course of the process, the essential electrical characteristics of the plasma (intensity, voltage, but also phase shift between intensity and voltage, etc.). , and thus makes it possible to modify, in real time, the characteristics of the electric sources used in these processes, in order to modify the characteristics of the plasma.
  • Such a modification in real time can be exploited in particular to perform a real-time servoing using a non-diagnostic disturbance based on electrical measurements; and thus avoid process drifts.
  • An application of the invention is indeed the control of these methods thanks to the electrical measurements provided by the probe.
  • Plasma reactors can be used to coat a sample of a thin layer of material, etch a sample by ion bombardment, or more generally to modify the structure or chemical composition of a surface.
  • a plasma reactor may also be used as a light source or as a waste gas treatment device for pollution control applications or as a thermonuclear fusion reactor.
  • the figure 1 represents, schematically and in section, an example of a plasma reactor to which the present invention applies.
  • This is, for example, a so-called radiofrequency excitation (RF) reactor by capacitive or inductive coupling.
  • RF radiofrequency excitation
  • Such a reactor comprises a vacuum chamber 53. Near a first wall 54 of this chamber is placed on a substrate holder 55, a sample 56 to be treated.
  • the sample 56 is generally in the form of a disc whose surface 57 directed towards the inside of the enclosure 53 constitutes the surface to be treated.
  • the enclosure 53 is filled with a gas at low pressure, for example of the order of a few tens to a few hundred millitorrs (a few tens to a few hundred pascals).
  • the gas comes from a source 57 to be injected into the enclosure of the reactor through a gas supply pipe 58, the gas flow rate being regulated by a flowmeter 59.
  • the gas is evacuated from the enclosure 53 by a discharge pipe 60 connected to a pumping system 61 consisting of one or more vacuum pumps in series.
  • the pumping volumetric flow rate is adjusted by means of a valve 62.
  • the pressure in the chamber is controlled with the valve 62 and / or the flowmeter 59.
  • a plasma reactor can also operate at atmospheric pressure or in a coarse vacuum (gas pressure between one-tenth atmosphere and one atmosphere). The treatment of gaseous effluents for depollution applications is often carried out at these pressures.
  • a radiofrequency voltage is applied to the substrate holder.
  • generating the plasma 63 by means of a source 64 independent of the substrate holder 55.
  • the last two types of sources may possibly be associated with an application of a static magnetic field.
  • a source independent of the substrate holder the latter may be biased by a radiofrequency source 66 to establish self-polarization and thus increase the impact energy of the ions on the surface to be treated.
  • the plasma source is a radiofrequency source
  • the latter may optionally be polarized at a higher frequency than that applied to the substrate holder 55 in order to control the electronic density preferentially.
  • an impedance matching circuit 67 (or matching circuit) is arranged between the generator 65 and the plasma source 64.
  • This circuit is connected to the generator 65 by a transmission line 68, generally coaxial with characteristic impedance equal to 50 ohms.
  • An impedance matching circuit is used to prevent the reflection of electromagnetic energy towards the source. This allows on the one hand to protect the source and on the other hand to optimize the transfer of power to the plasma.
  • This circuit modifies the electrical impedance of the plasma source in order to make it equal to the characteristic impedance of the line 68.
  • the transmission line 68 is said to be adapted.
  • the tuning circuit 67 is connected to the plasma source 64 by a coaxial or radial transmission line 69. This line is mismatched because the impedance of the plasma source is not equal to the characteristic impedance of line 69.
  • a tuning circuit 70 is interposed between the substrate holder and the source.
  • the latter is connected to the tuning circuit by a line of adapted coaxial impedance transmitting transmission 71 characteristic generally equal to 50 ohms.
  • the output of the impedance circuit 70 is connected to the substrate holder by a mismatched radial or coaxial transmission line 72.
  • Plasma processes using a radiofrequency source most often use a frequency in the high frequency domain (HF band: 3 MHz - 30 MHz). In this range, the 13.56 MHz frequency is currently the most used.
  • HF band 3 MHz - 30 MHz
  • Plasmas concerned by the present invention include chemically reactive plasmas (and in which chemical reactivity in addition to ion bombardment may be used).
  • the production rate of radicals produced by electronic collisions is a function of electronic concentration.
  • the flow of charged particles (electrons and ions) that arrive and leave the surface to be treated is proportional to the electronic concentration.
  • Chemical reactivity and ion bombardment generally act synergistically in these plasmas.
  • the electron concentration and the ion flux are proportional to the electric current in the plasma.
  • the flow of ions and the energy of the ions bombarding the surface to be treated are proportional to the voltage applied to the substrate holder 55 or the electrode 64 in the case of a capacitively coupled source.
  • the measurement of the current flowing in the plasma or of the voltage applied on the electrodes 55 or 64 is therefore a means of controlling characteristics of the plasma without disturbing it.
  • This measurement is performed during the process or during the cleaning and is preferably located on mismatched transmission lines 69 and 72 in order to be carried out as close as possible to the plasma.
  • the measurement probe may also be located on the appropriate transmission lines 68 and 71 to measure the quality of the impedance matching. And this, to possibly modify the characteristics of the impedance matching circuits 67 and 70 and to improve the level of adaptation on the lines 68 and 71.
  • the measurement of the current and the voltage can be associated with a device responsible for measuring the temporal phase shift between the current and the voltage in order to deduce the power dissipated in the plasma and the impedance of the plasma.
  • a device responsible for measuring the temporal phase shift between the current and the voltage in order to deduce the power dissipated in the plasma and the impedance of the plasma.
  • These last two parameters as well as the amplitudes of the voltage and the current are useful to control the smooth running of these processes and the plasma cleaning steps of the reactors. They can optionally control a servo to avoid process drifts.
  • the quality of the control is strongly Dependent on the performance of the probe used to measure current and voltage.
  • the invention applies more particularly to plasmas excited by a source of current or variable voltage, such as a sinusoidal voltage generator or pulse voltage.
  • the invention will find particularly advantageous applications in such excited plasmas with a sinusoidal radiofrequency voltage of frequency between 1 MHz and 1 GHz.
  • the electrical impedance of a plasma depends on the current flowing in the plasma: it is called non-linear.
  • a plasma excited by an alternating voltage source of frequency f generates harmonics of this excitation voltage at the frequencies of f. For example, for a plasma generated by a sinusoidal voltage at 13.56 MHz, sinusoidal components at 27.12 MHz, 40.68 MHz, 54.24 MHz ... appear in the measured voltage and current signals).
  • Such a measurement can in particular be used to detect the end of the plasma etching of a dielectric layer on a microprocessor during manufacture. It is specified that the amplitudes of these harmonics at 2f, 3f, 4f ... are much smaller than the amplitude of the fundamental component f, and that it is therefore necessary to be able to isolate them from this fundamental component by filtering.
  • the voltage and current probes must operate in a very wide frequency range because the frequency difference between each harmonic of the fundamental frequency component is higher than in the case where the fundamental frequency used is higher. low (13.56 MHz for example).
  • phase shift measurement is strongly dependent on the performance of the sensor used to measure the current and the voltage. This measurement must be precise because the phase shift variations are often very small.
  • the figure 2 thus exposes in longitudinal section a probe 10 mounted on an electrically conductive coaxial transmission line 20 which comprises an inner conductor 21 and an outer conductor 22 which surrounds the inner conductor
  • the coaxial line 20 described above corresponds for example to line 69 or line 72 of FIG. figure 1 .
  • the radiofrequency electrode 31 corresponds, for example, to the substrate holder 55 or to the plasma source 64 of this same figure 1 .
  • the cover 32 corresponds for example to the enclosure 53 or the wall 54 of the vacuum chamber of this figure.
  • the line is said to be adapted. Between the tuning circuit and the plasma, the line is called mismatched.
  • the space between the inner conductor and the outer conductor is electrically insulating - it can be evacuated or filled with a dielectric material.
  • the line is traversed by currents moving in opposite directions along the core 21 and the envelope 22. These currents are generated by the AC voltage source which excites the plasma via the RF electrode 31 which is in contact with the plasma.
  • the probe 10 comprises means 11 for measuring the voltage between the current flowing through the line 10 and a ground connected to the outer conductor 22, and means 12 for measuring the intensity of this current.
  • the measurement of the voltage V2 between the two cables 111 and 112 thus corresponds normally to the voltage that it is desired to measure.
  • the current measurement means 12 comprise a conductive loop 121 (or several loops in series) disposed near the inner conductor 21, and one end of which is connected to ground (connection to the outer conductor 22).
  • the inner conductor is traversed by the sinusoidal current I plasma that is to be measured.
  • This current induces a sinusoidal and azimuth magnetic field B, which induces a voltage (or electromotive force) between the ends of the This is an indirect technique for measuring current since it uses the magnetic field induced by the current to be measured.
  • the loop 121 is also capacitively coupled to the central conductor which has the consequence of adding to the voltage measured across the loop a voltage which is proportional to the voltage V plasma between the two conductors of the line 20.
  • the loop 121 disturbs the line 20 because it forms a partial short circuit between the two conductors 21 and 22, which can cause a breakdown. In practice, the use of such a loop is thus limited to powers less than 10 kW.
  • these probes all implement a measurement of the indirect current because they use the magnetic field induced by the currents flowing in the line 20.
  • An object of the invention is to overcome these limitations.
  • Another object of the invention is to allow simultaneous and accurate measurement of current and voltage at very close points.
  • Yet another object of the invention is to make it possible to carry out such measurements over a wide range of power.
  • Yet another object of the invention is to make it possible to perform such measurements over a wide range of frequencies.
  • the invention also proposes a plasma reactor comprising an RF generator and a probe as mentioned above.
  • the probe is mounted between an RF electrode and an impedance matching circuit connected to an RF generator (not shown).
  • an impedance matching circuit can indeed be used in plasma processes in particular in order to optimize the transfer to the plasma of the power delivered by the RF generator.
  • the probe according to the invention can be mounted differently - we will return to this aspect.
  • the probe according to the invention is indeed intended to measure at extremely close points, simultaneously, instantaneous current and voltage, especially in plasmas using electrical power in the field of radio frequency (RF).
  • RF radio frequency
  • This measurement is carried out at a point on the transmission lines responsible for transporting the electric power, delivered by an RF generator, to the enclosure in which the plasma is confined.
  • the invention will in particular be implemented advantageously on so-called mismatched transmission lines.
  • the two sensors 41, 42 are thus inserted in series in a section of the outer conductor 22, being separated only by a distance of the order of 5 millimeters.
  • Such spacing is considered in the sense of the present invention as negligible, and it will therefore be considered that the two sensors are located at the same level on the current path on the surface of the conductor 22.
  • This can also be expressed by saying that the two sensors 41 and 42 are implanted in a plane (Z constant), with the dimension Z defined by the axis A which is parallel to the conductors 21 and 22.
  • Line 20 may be a cylindrical coaxial line, or any type of coaxial line in which an inner conductor is surrounded by an outer conductor.
  • the outer conductor 22 is connected to the electrical ground of the system.
  • a RF V plasma voltage is applied at the output of the tuning circuit, between the internal and external conductor, at the input of this line section (ie in its upper part on the representation of the figure 3 ).
  • the resulting alternating RF current passes completely or partially through the plasma (shown under the electrode 31) and returns through the external conductor.
  • a groove 410 is hollowed out in the internal face of the outer conductor 22 in order to make RF current of skin an additional path (of the order of one centimeter long).
  • the current path on the walls of this groove is illustrated by arrows.
  • the groove is symmetrical about the central axis A of the line 20. It follows a geometry of revolution relative to this axis.
  • Means for measuring a voltage V1 are associated with this groove.
  • the figure 4 gives the equivalent electrical diagram of the probe.
  • the detour of the groove 410 behaves like an inductance L m of low value (of the order of nanohenry, which is not significant - for comparison the simple inductance of the conductors 21 and 22 is typically a few tens nanohenry per meter) placed in series on the course of the current.
  • the measurement of the voltage V1 amounts to measuring the voltage across a portion (L m ) of the total inductance L tot .
  • a high-frequency coaxial base 411 of the SMA type (50 ohms) is driven from the outside into an orifice in the wall of the conductor 22 which opens into the groove (cf. figures 5d ).
  • This base 411 has a screw connector for connecting a conventional coaxial cable (50 ohms) to carry the measured signal to a display device (oscilloscope ...) or acquisition (analog-to-digital conversion card) ).
  • the current sensor 41 is a sensor called "differentiator".
  • the measured signal (V1 (t)) at the output of this sensor is phase shifted by + ⁇ / 2 with respect to the signal (I plasma (t)) that is to be measured.
  • the voltage sensor 42 is also a divider, which makes it possible to use the probe to measure phase-shifts between the current and the voltage: with a voltage sensor 42 measuring a phase-shifted voltage of + ⁇ / 2 with respect to the voltage V plasma , a phase shift is obtained between the measured signals V1 and V2 which is identical to the phase difference between the current (I plasma ) and the voltage (V plasma ) on the coaxial line.
  • the invention thus preferably uses a voltage sensor 42 comprising a so-called conical transmission line 420 terminated by a slightly convex surface 421 in "capacitive" coupling with the inner conductor 21.
  • the coupling capacitance between the surface 421 and the conductor internal is of the order of 0.3 pF.
  • the critical dimensions of the elements forming the probe will be adapted according to the operating parameters of this probe (range of value voltages that we want to measure, accuracy that we want to obtain on the current / voltage phase shift, frequency at which we work, ). In any case care should be taken to ensure that the internal and external conductors are sufficiently spaced to prevent breakdown.
  • the dimensions of the conical line are chosen so that its characteristic impedance is equal to 50 ohms - which makes it possible to connect this conical line to a coaxial transmission line constructed from an SMA base identical to that used for the current sensor 41.
  • the output of the voltage sensor can be connected with a coaxial cable to a display and acquisition device.
  • the conical line is partly embedded in the conductor 22 which is grounded (cf. figure 5c ).
  • the external conductor is considered as a simple shield blocking the electromagnetic radiation emitted by the inner conductor, and not as a conductor carrying the return electric current that can be operated.
  • the electrical circuit equivalent to the conical line voltage sensor is shown on the figure 4 . Without the use of a conical line, there would be a capacitor in parallel between the sensor and the mass. This is the case for conventional voltage sensors. The presence of this additional component alters the frequency response of the sensor. In particular, it reduces the frequency range for which its response is derived.
  • a conical line ensures a continuous transition between the curved sensor and the charged cylindrical coaxial line conveying the voltage to be measured to a display and acquisition device. This is to integrate this parasitic capacitor in those normally present between the two conductors of a coaxial line so that it does not alter the response of the probe.
  • the probe comprises two main tubular elements 4100, 4200 which are intended to be aligned and assembled, each of these two elements being associated with a respective sensor of the probe (sensor 41 for element 4100, sensor 42 for element 4200 ).
  • the element 4200 serves to close the throat of the current probe (cf. figure 5b ), with the two sensors 41, 42 located closest to the plane of contact between the two elements 4100, 4200.
  • the two probes are thus arranged closer to each other (cf. figure 5a ).
  • the sensor prototype represented on the Figures 5a to 5c is of generally cylindrical shape.
  • the figure 5a shows a probe mounted with male coaxial connectors of type HN.
  • the figure 5b shows a disassembled probe with N female coaxial connectors.
  • the invention can also be disposed on a transmission line permanently (without screw connectors) as illustrated by the diagram of the figure 3 .
  • the transmission line on which the sensor is inserted is not necessarily cylindrical and coaxial. It can be a coaxial line with square or rectangular section. More generally, the line must have two conductors, one of which encloses the other and propagating mainly a type of electromagnetic mode "TEM" (transverse electrical and magnetic).
  • TEM transverse electrical and magnetic
  • the line in which the sensor is implanted may also be a radial line such as that constituted by the RF electrode 31 and the cover 32 in the form of a concentric ring.
  • current-diverting groove can be made in the wall of the cover which is opposite the RF electrode.
  • An example of implantation of the invention in a radial line is shown on the figure 7 .
  • the senor does not disturb the line, it can be arranged on a suitable transmission line without any risk of disordering it, as for example on lines 68 and 71 of FIG. figure 1 located between the RF power generator and the impedance matching circuit.
  • this behavior of linear variation with the frequency is particularly observable for frequencies up to 500 MHz.
  • V2 The measured voltage (V2) is thus proportional to the voltage to be measured (V plasma , which can be noted V 0 ) with a multiplicative factor (fV 0 ) proportional to the frequency of the signal to be measured (and it is the same for the current).
  • the probe according to the invention is particularly simple to construct.
  • the prototype illustrated on Figures 5a to 5d whose calibration curves are exposed on the figure 6 , only required the machining of four metal parts, the use of twelve screws for assembly and the purchase of four coaxial connectors.
  • Another advantage of the probe lies in its simple geometry. This geometry has the advantage of being easily modeled using an analytical calculation. It is thus not necessary to manufacture a large number of prototypes or to resort to complex computer modeling to design and dimension a probe according to the present invention.
  • the probe according to the invention also has a great compactness (use of compact sensors themselves embedded in a conductor connected to the electrical ground). And it is possible to have these sensors close to each other without disturbing them.
  • the probe according to the invention is moreover able to operate over large frequency ranges (typically between 1 MHz and 1 GHz), and is thus not subject to the frequency range limitation of known probes.
  • Another advantageous aspect of the invention resides in the fact that, on the one hand, the measurement of current is direct since it does not use the magnetic field induced by the current to be measured, and that on the other hand the throat ensures its own shielding against magnetic fields external variables. Even in the presence of such fields, the output voltage of the current sensor is not parasitized.
  • connection inversion of the probe does not change the voltage measurement but changes the sign of the measurement of I (phase shift of - ⁇ ).
  • the invention uses non-intrusive sensors embedded, or partially embedded, in a conductor connected to the electrical earth. This feature greatly reduces the risk of electrical breakdown (short circuit) caused by the presence of sensors.
  • the probe object of the present invention can therefore measure voltages and currents much higher than conventional devices.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
EP05789496.6A 2004-09-16 2005-09-15 Sonde de mesure de caracteristiques d'un courant d'excitation d'un plasma, et reacteur a plasma associe. Not-in-force EP1794600B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0409811A FR2875304B1 (fr) 2004-09-16 2004-09-16 Sonde de mesure de caracteristiques d'un courant d'excitation d'un plasma, et reacteur a plasma associe
PCT/EP2005/054599 WO2006030024A1 (fr) 2004-09-16 2005-09-15 Sonde de mesure de caracteristiques d'un courant d'excitation d'un plasma, et reacteur a plasma associe.

Publications (2)

Publication Number Publication Date
EP1794600A1 EP1794600A1 (fr) 2007-06-13
EP1794600B1 true EP1794600B1 (fr) 2015-04-08

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EP05789496.6A Not-in-force EP1794600B1 (fr) 2004-09-16 2005-09-15 Sonde de mesure de caracteristiques d'un courant d'excitation d'un plasma, et reacteur a plasma associe.

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US (1) US7615985B2 (ja)
EP (1) EP1794600B1 (ja)
JP (1) JP5209313B2 (ja)
FR (1) FR2875304B1 (ja)
WO (1) WO2006030024A1 (ja)

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Publication number Publication date
US20070252580A1 (en) 2007-11-01
JP5209313B2 (ja) 2013-06-12
FR2875304A1 (fr) 2006-03-17
WO2006030024A1 (fr) 2006-03-23
EP1794600A1 (fr) 2007-06-13
FR2875304B1 (fr) 2006-12-22
JP2008513940A (ja) 2008-05-01
US7615985B2 (en) 2009-11-10

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