EP1768212B1 - Frequenzvariable Leitungsstruktur - Google Patents

Frequenzvariable Leitungsstruktur Download PDF

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Publication number
EP1768212B1
EP1768212B1 EP06121114A EP06121114A EP1768212B1 EP 1768212 B1 EP1768212 B1 EP 1768212B1 EP 06121114 A EP06121114 A EP 06121114A EP 06121114 A EP06121114 A EP 06121114A EP 1768212 B1 EP1768212 B1 EP 1768212B1
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EP
European Patent Office
Prior art keywords
conductive
nanostructures
plane
dielectric substrate
flat conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
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EP06121114A
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English (en)
French (fr)
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EP1768212A1 (de
Inventor
Anne Ghis
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
    • H01Q15/008—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces said selective devices having Sievenpipers' mushroom elements

Definitions

  • the invention relates to a conductive structure of variable extent depending on the frequency and, more particularly, a multi-band antenna ground plane.
  • two conductive reinforcements separated by a dielectric medium constitute a planar capacitor whose capacitance C is proportional to the surface of the reinforcements opposite:
  • VS ⁇ 0 ⁇ ⁇ r ⁇ S / e ( ⁇ 0 is the dielectric permittivity of the vacuum, ⁇ r the relative dielectric permittivity of the material between the two plates of the capacitor, S the surface of the armatures opposite, e the distance between the two plates).
  • the value of a capacitance is generally defined, on the one hand, by the geometry of the component (and, in particular, the design of the metal zones) and, on the other hand, by the nature and the thicknesses of the insulation layers.
  • the number of capacitors is optimized according to the number of configurations required.
  • the control signals of the state of the switches must then be taken into account in the design and implementation of the device.
  • the implementation of such a switching system is particularly cumbersome to implement.
  • the dimensions of the circuits are no longer negligible in front of the wavelength of the electromagnetic excitation. This means that the trajectories of the electrons participating in the current strongly depend on the local geometry of the conductors. For example, reducing the width of a driver is an obstacle causing reflections and can be likened to a high frequency inductance.
  • connections between the elements of the same circuit can no longer be considered as perfect links.
  • These connections must indeed be considered as passive elements having a resistance, a inductance and a significant capacity.
  • switches active components of the transistors or electromechanical components type
  • microelectronic systems must take into account, depending on the frequency of use, on the one hand, the electrical characteristics and the specificities of implementation of these systems (implementation, technological process, postponement (for example, report says “above IC”), etc.) and, on the other hand, the management and routing of the control signals.
  • microstructures made by lithography and etching techniques, are then distributed over the entire surface of the ground plane. These microstructures insert resonant circuits of LC type (inductance L / capacitance C) in the propagation of the surface currents. The geometry of the microstructures is then calculated to make the high impedance ground plane at a specified resonant frequency, usually the frequency of the carrier.
  • LC type inductance L / capacitance C
  • the Figures 1a and 1b illustrate a first example of antenna ground plane of the prior art provided with such microstructures.
  • the Figures 1a and 1b are respectively a cross-sectional view and a top view of the antenna ground plane.
  • a support S for example a printed circuit substrate, is covered, on a first face, with a set of disjointed conductive blocks m and, on a second face, opposite to the first face, with a uniform conductive plane P.
  • V-shaped metallized holes connect the conducting blocks m to the conductive plane P.
  • the distance d separating two adjacent conductive blocks determines a capacitance Ca.
  • a metallized hole V constitutes an inductive inductance connection La.
  • the resulting surface is therefore inductive to the electrodes. low "frequencies and capacitive at" high "frequencies.
  • the figure 2 is a sectional view of another example of an antenna ground plane of the prior art.
  • the conductive blocks are not here all arranged in the same plane but in two parallel planes P1 and P2 separated by a distance D.
  • the blocks m2 located in the plane P2 are partially opposite the blocks m1 located in the plane P1.
  • the metal surfaces opposite the blocks m1 and m2 then constitute, with the dielectric layer of thickness D which separates them, capacitors. The control of the size of the facing surfaces makes it possible to adjust the capacity of the capacitors and hence the resonance frequency of the ground plane.
  • the prior art antenna ground planes described above are designed for a single carrier frequency. This represents a disadvantage. Indeed, some electromagnetic information transmission systems are likely, for different reasons, to change the carrier frequency. This is the case, for example, when a congestion of the communication network occurs. Specific antennas capable of transmitting at different carrier frequencies (eg dual-band antennas capable of transmitting at two different frequencies) have been designed for this purpose. An antenna ground plane calculated for a single carrier frequency is then not optimal for other carrier frequencies that may be used. The performance of the antenna is then deteriorated.
  • the second planar conductive layer completely surrounds the first planar conductive layer.
  • a second face of the substrate dielectric is covered with a conductive plane.
  • the one-dimensional nanostructures are carbon nanotubes.
  • the invention also relates to an antenna multi-band ground plane comprising a dielectric substrate covered, on a first face, with a set of plane conductive patterns and, on a second face, opposite to the first face, of a plane conductive, the planar conductive patterns being connected to the conductive plane through metallized holes which pass through the dielectric substrate, characterized in that an additional plane conductive pattern completely surrounds each planar conductive pattern, the additional planar conductive pattern being separated by a space, of the plane conductive pattern which it surrounds, and in that one-dimensional nanostructures having a resonant frequency are distributed on the dielectric substrate in the space separating the plane conductive pattern from the additional conductive pattern, the one-dimensional nanostructures having an axis substantially perpendicular to the plane of the flat conductive patterns.
  • the one-dimensional nanostructures are carbon nanotubes.
  • electrically conductive blocks are present in the thickness of the dielectric substrate, in a plane parallel to the planes of the first and second faces of the dielectric substrate and situated between said planes of the first and second faces, at least a fraction of an additional plane conductive pattern facing at least a fraction of at least one electrically conductive pad, a metallized hole connecting each electrically conductive pad to the conductive plane on the second face of the dielectric substrate.
  • the invention advantageously makes it possible, among other things, simply to realize dual-band antennas whose ground plane is high impedance to the two carrier frequencies that may be used.
  • the inductance / capacitance characteristics of the microstructures are then adapted to the two resonance frequencies.
  • the Figures 3a and 3b illustrate a first example of a conductive structure of variable extent as a function of the frequency according to the invention.
  • the figure 3a is a top view of the structure and the figure 3b is a cross-sectional view.
  • the surface plane element SA and the surface plane strip SB are separated by a distance 11.
  • Nanostructures vertical unidimensional NT are distributed over a surface SAB, in a space of width 11 which separates the surface element SA from the surface strip SB.
  • the NT one-dimensional nanostructures are carbon nanotubes such as those described in the international application. WO 02/080361 A1 . It is also possible to use other materials to make one-dimensional nanostructures. Carbon is preferentially chosen for its excellent chemical and mechanical stability. Nanowires can also be used.
  • a "one-dimensional” nanostructure means a wire structure whose length is much greater than the diameter and whose average diameter varies, for example, from a few nanometers to a few tens of nanometers.
  • the "unidimensional" characteristic is essential to have a mechanical resonance whatever the direction of the excitation.
  • the axis of the unidimensional nanostructures is substantially perpendicular to the planar surface elements SA and SB.
  • carbon nanotubes are hollow carbon tubes whose average diameter varies from a few nanometers to a few tens of nanometers.
  • F R 1 ⁇ 875 2 8 ⁇ ⁇ ⁇ 1 The 2 ⁇ ⁇ 2 + ⁇ ⁇ i 2 ⁇ Eb ⁇
  • the length L of the nanotubes may vary, for example, from substantially 10 nm to substantially 100 ⁇ m.
  • the nanotubes are reported on the substrate 1 in a manner which is described below, with reference to the Figures 13 to 16 .
  • each nanotube is a high quality factor band-pass filtering element.
  • the filtering properties of the nanotubes are used to modulate the conductive surfaces.
  • the assembly consisting of the surface plane element SA, of the set of nanotubes distributed over the surface SAB and of the surface conducting strip SB is it equivalent to a single conductive surface equal to the sum SA + SAB + SB, whereas at the frequencies located on either side of the resonant frequency, the surfaces SA and SB are electrically isolated from each other.
  • two adjacent coplanar conductive surfaces interconnected from edge to edge by a set of vertical one-dimensional nanostructures, behave as a single conductive surface at the resonant frequency nanostructures, and as two separate surfaces at the other frequencies.
  • nanostructures disclosed in the international application WO 02/080361 are laid on a conductive surface.
  • the nanostructures are laid directly on a dielectric substrate.
  • An advantageous feature of the unidimensional nanostructure filter is that it allows the currents to propagate in an omnidirectional and delocalized manner, ie over the entire length of the side common to the two conductive surfaces, without introducing any discontinuity in the geometry of the conductors.
  • one of the surfaces is connected to a conductive element only by a joint of one-dimensional nanostructures (this is the case, for example, of the surface SB on the Figures 3a and 3b ), it behaves as electrically floating for all the frequencies other than the resonance frequency of the nanostructures, and as electrically connected to the conducting element at the resonant frequency.
  • the dielectric substrate F is covered on a second face, opposite to the first face, of a conductive plane M.
  • the conductive structure illustrated in FIGS. Figures 3a and 3b is therefore a capacitor whose capacity varies according to the frequency.
  • the three surfaces S1, S2, S3 are electrically isolated from each other.
  • the figure 5 represents a top view of a first example of a dual-band antenna ground plane according to the invention.
  • a set of elementary patterns are regularly distributed on the first face of the substrate S.
  • An elementary pattern consists of a conductive pad p1, surrounded by a set of vertical one-dimensional nanostructures NT, which set of vertical nanostructures NT is itself surrounded by a conductive strip b1.
  • the conductive pad p1, the set of vertical nanostructures NT and the band b1 have, for example, a hexagonal geometry.
  • the conductive pad p1 is electrically connected, by a metallized hole V, to a conductive plane P located on a second face of the opposite substrate of the first face (not shown in the figure).
  • the bands b1 are electrically isolated from the blocks p1 and, consequently, only the blocks p1 contribute to the conduction in the antenna ground plane.
  • the band b1 and the block p1 of each elementary pattern are electrically connected to each other. It is then the p1 blocks, the NT nanostructures and the b1 bands that contribute to the antenna ground plane. It is thus possible to produce a ground plane which has a high impedance at two frequencies of different carriers, one of the two carrier frequencies being the frequency resonance of nanostructures.
  • the high impedance ground plane is then advantageously a dual-band ground plane without band switching.
  • the Figures 6a and 6b represent a second example of a dual-band antenna ground plane according to the invention.
  • This second example corresponds, in the context of the invention, to the two-band mass plane represented in FIG. figure 2 , in the context of the prior art.
  • the conductive blocks are then located in two parallel planes P1 and P2 separated by a distance D.
  • the difference between the dual-band ground plane of the invention and the dual-band ground plane of the prior art is that the conductive surface of the blocks m2 located in the plane P2 varies according to the frequency.
  • a square m2 is in fact composed of an electrically conductive plane element m2a surrounded by an electrically conductive flat strip m2b, the space separating the strip m2b from the plane element m2a being filled with one-dimensional vertical nanostructures NT.
  • the surface of a m2 block is thus the sum of the surface of the m2a element, the m2b band and the space filled with NT nanotubes which separates the m2a element from the m2b band.
  • the area of a square block m2 is the area of the single element m2a, the band m2b being electrically isolated from the rest of the circuit.
  • the Figures 7 - 16 illustrate an example of a process for manufacturing nanotubes.
  • the figure 7 illustrates the formation of a layer of metal or electrical conductor 2 on a dielectric substrate 1.
  • the dielectric substrate 1 is chosen according to the desired electrical performance.
  • the substrate 1 is it, preferably, alumina (SiO 2 ) for use frequencies of the order of a few Gigahertz.
  • Other materials can however be used such as, for example, sapphire, quartz, beryllium oxide, titanium dioxide, glass.
  • the material that constitutes the electrical conductor layer 2 is, for example, silver, copper, gold, aluminum, niobium, molybdenum, chromium, titanium, tantalum.
  • the formation of the conductive layer 2 is followed by the deposition of a resin layer 3 on the conductive layer 2, and then an etching of the resin layer 3 ( figure 8 ) followed by etching of the conductive layer 2 ( figure 9 ).
  • the etchings of the resin layer 3 and the conductive layer 2 lead to a surface E of the dielectric substrate 1 which one-dimensional nanostructures will be formed (cf. figure 9 ).
  • the zone Z once defined is engraved (cf. figure 12 ) and a catalyst 6 is deposited on the resin layer 4 and on the surface E (cf. figure 13 ).
  • the catalyst 6 may be, for example, Fe / Co, Nickel, or Fe / Si, deposited by evaporation or by spraying to a thickness that may vary, for example, from 1 nm to 100 nm.
  • a withdrawal of the resin 4 is then carried out so that the catalyst 6 is only present on the surface E (cf. figure 14 ).
  • Catalyst 6 is then configured into a multiplicity of plots.
  • Plt plots are obtained, for example, using fine lithography techniques that allow obtaining a regular network of studs or using thermal coalescence techniques that allow to obtain studs whose size is distributed according to a mean distribution around a targeted value (cf. figure 15 ).
  • Plt plots are, for example, cylindrical elements of a few nanometers in diameter.
  • the one-dimensional NT nanostructures are then produced in situ, by plasma-assisted chemical vapor deposition, more commonly known as PECVD ("Plasma Enhanced Chemical Vapor Deposition").
  • PECVD plasma-assisted chemical vapor deposition
  • the PECVD deposit is, for example, a vapor phase carbon deposit.
  • the NT nanostructures then grow naturally, unidimensionally, from the plt plots (cf. figure 16 ).
  • the diameter of the studs determines that of the nanostructures (they are substantially equal). At most the PECVD deposit lasts, the longer the nanostructures are.
  • the upper end of the nanostructures is positioned substantially at the surface of the conductive layer 2.
  • the vibration of the nanostructures is caused by the electromagnetic field related to the displacement of the electrons in the conductive plane 2.
  • the vibration is maximal when the field is maximum, that is to say when the center of oscillation of the nanostructures is positioned, in height, substantially in the middle of the thickness of the conductive
  • the substrate 1 has a single-level surface on which the conductive layer 2 and the NT nanostructures (cf. figure 16 ).
  • the zone of the substrate 1 on which the nanostructures are placed is not at the same level as that where is placed the conductive layer 2.
  • the substrate 1 is then either raised (cf. figure 17 ) is lowered (cf. figure 18 ) under the nanostructures.
  • the substrate 1 is selectively etched where the conductive layer 2 is intended to be deposited.
  • it is the area where the nanotubes are placed which is previously selectively etched.

Claims (7)

  1. Leitungsstruktur mit wenigstens einer ersten planen Leitungsschicht, abgeschieden auf einer ersten Seite eines dielektrischen Substrats, wobei die erste plane Leitungsschicht wenigstens einen Rand aufweist,
    dadurch gekennzeichnet, dass sie umfasst:
    - wenigstens eine zweite plane Leitungsschicht, abgeschieden auf der ersten Seite des dielektrischen Substrats, wobei die zweite plane Leitungsschicht wenigstens einen dem Rand der ersten planen Leitungsschicht gegenüberstehenden Rand aufweist, und
    - eine Gruppe eindimensionaler Nanostrukturen (NT) mit einer Resonanzfrequenz (FR), wobei die eindimensionalen Nanostrukturen eine im Wesentlichen zur Ebene der ersten und zweiten Leitungsschicht senkrechte Achse haben und auf dem dielektrischen Substrat verteilt sind zwischen dem Rand der ersten planen Leitungsschicht und dem Rand der zweiten planen Leitungsschicht.
  2. Leitungsstruktur nach Anspruch 1, bei der die zweite plane Leitungsschicht die erste plane Leitungsschicht ganz umgibt.
  3. Leitungsstruktur nach einem der Ansprüche 1 oder 2, bei der eine der ersten Seite entgegengesetzte zweite Seite des dielektrischen Substrats mit einer Leitungsebene überzogen ist.
  4. Leitungsstruktur nach einem der Ansprüche 1 oder 3, bei der die eindimensionalen Nanostrukturen Kohlenstoff-Nanoröhren sind.
  5. Multiband-Masseplatte für Antenne, ein dielektrisches Substrat (S) umfassend, das auf einer ersten Seite mit einer Gruppe planer Leitungsmuster (p1, m2a) bedeckt ist und auf einer der ersten Seite entgegengesetzten zweiten Seite mit einer Leitungsebene (P), wobei die planen Leitungsmuster (p1, m2a) mit der Leitungsebene (P) durch metallisierte Löcher (V) verbunden sind, die das dielektrische Substrat (S) durchqueren,
    dadurch gekennzeichnet, dass ein zusätzliches planes Leitungsmuster (p1, m2b) jedes plane Leitungsmuster (p1, m2a) umgibt, wobei das zusätzliche plane Leitungsmuster durch einen Zwischenraum getrennt ist von dem planen Leitungsmuster, das es umgibt,
    und dadurch, dass eindimensionale Nanostrukturen (NT) mit einer Resonanzfrequenz auf dem dielektrischen Substrat verteilt sind, in dem Zwischenraum, der das plane Leitungsmuster (p1, m2a) von dem zusätzlichen Leitungsmuster (b1, m2b) trennt, wobei die eindimensionalen Nanostrukturen (NT) eine zur Ebene der planen Leitungsmuster im Wesentlichen senkrechte Achse haben.
  6. Multiband-Masseplatte nach Anspruch 5, bei der die eindimensionalen Nanostrukturen Kohlenstoff-Nanoröhren sind.
  7. Multiband-Masseplatte nach einem der Ansprüche 5 oder 6, dadurch gekennzeichnet, dass in der Dicke des dielektrischen Substrats elektrisch leitfähige Elemente (m1) vorhanden sind, in einer Ebene (P1), die parallel ist zu den Ebenen der ersten und zweiten Seite des dielektrischen Substrats und die sich zwischen den genannten Ebenen der ersten und der zweiten Seite befindet, wobei wenigstens ein Teil eines zusätzlichen planen Leitungsmusters (m2a) wenigstens einem Teil von wenigstens einem elektrisch leitfähigen Element (m1) gegenübersteht, und ein metallisiertes Loch jedes elektrisch leitfähige Element (m1) mit der Leitungsebene (P) verbindet, die sich auf der zweiten Seite des dielektrischen Substrats befindet.
EP06121114A 2005-09-26 2006-09-22 Frequenzvariable Leitungsstruktur Not-in-force EP1768212B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0552871A FR2891405B1 (fr) 2005-09-26 2005-09-26 Structure conductrice d'etendue variable en fonction de la frequence

Publications (2)

Publication Number Publication Date
EP1768212A1 EP1768212A1 (de) 2007-03-28
EP1768212B1 true EP1768212B1 (de) 2008-04-02

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EP06121114A Not-in-force EP1768212B1 (de) 2005-09-26 2006-09-22 Frequenzvariable Leitungsstruktur

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EP (1) EP1768212B1 (de)
AT (1) ATE391350T1 (de)
DE (1) DE602006000856T2 (de)
ES (1) ES2306378T3 (de)
FR (1) FR2891405B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791433B2 (en) * 2008-02-29 2010-09-07 Nokia Corporation Apparatus, method, and computer program product providing edgeless carbon nanotube resonator arrays

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6700550B2 (en) * 1997-01-16 2004-03-02 Ambit Corporation Optical antenna array for harmonic generation, mixing and signal amplification
KR20000074609A (ko) * 1999-05-24 2000-12-15 김순택 카본 나노 튜브를 이용한 전계 방출 어레이 및 그 제조방법
WO2002080361A1 (en) * 2001-03-30 2002-10-10 California Institute Of Technology Carbon nanotube array rf filter

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Publication number Publication date
ES2306378T3 (es) 2008-11-01
FR2891405B1 (fr) 2011-11-25
ATE391350T1 (de) 2008-04-15
EP1768212A1 (de) 2007-03-28
FR2891405A1 (fr) 2007-03-30
DE602006000856D1 (de) 2008-05-15
DE602006000856T2 (de) 2009-05-07

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