EP1730764A4 - Lpp-euv-lichtquelle - Google Patents

Lpp-euv-lichtquelle

Info

Publication number
EP1730764A4
EP1730764A4 EP05724577A EP05724577A EP1730764A4 EP 1730764 A4 EP1730764 A4 EP 1730764A4 EP 05724577 A EP05724577 A EP 05724577A EP 05724577 A EP05724577 A EP 05724577A EP 1730764 A4 EP1730764 A4 EP 1730764A4
Authority
EP
European Patent Office
Prior art keywords
light source
euv light
lpp euv
lpp
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05724577A
Other languages
English (en)
French (fr)
Other versions
EP1730764A2 (de
Inventor
William N Partlo
Daniel J W Brown
Igor V Fomenkov
Norbert R Bowering
Curtis L Rettig
Joseph J Macfarlane
Alexander I Ershov
Bjorn A M Hansson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cymer Inc
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/803,526 external-priority patent/US7087914B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of EP1730764A2 publication Critical patent/EP1730764A2/de
Publication of EP1730764A4 publication Critical patent/EP1730764A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/20—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0085—Modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1645—Solid materials characterised by a crystal matrix halide
    • H01S3/1653—YLiF4(YLF, LYF)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2255—XeF, i.e. xenon fluoride is comprised for lasing around 351 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2375—Hybrid lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Lasers (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
EP05724577A 2004-03-17 2005-03-03 Lpp-euv-lichtquelle Withdrawn EP1730764A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/803,526 US7087914B2 (en) 2004-03-17 2004-03-17 High repetition rate laser produced plasma EUV light source
US10/979,919 US7317196B2 (en) 2004-03-17 2004-11-01 LPP EUV light source
PCT/US2005/007063 WO2005089131A2 (en) 2004-03-17 2005-03-03 Lpp euv light source

Publications (2)

Publication Number Publication Date
EP1730764A2 EP1730764A2 (de) 2006-12-13
EP1730764A4 true EP1730764A4 (de) 2010-08-18

Family

ID=34994164

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05724577A Withdrawn EP1730764A4 (de) 2004-03-17 2005-03-03 Lpp-euv-lichtquelle

Country Status (4)

Country Link
EP (1) EP1730764A4 (de)
JP (1) JP2007529903A (de)
KR (1) KR20060125905A (de)
WO (1) WO2005089131A2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928416B2 (en) * 2006-12-22 2011-04-19 Cymer, Inc. Laser produced plasma EUV light source
US20060146906A1 (en) * 2004-02-18 2006-07-06 Cymer, Inc. LLP EUV drive laser
JP4574211B2 (ja) * 2004-04-19 2010-11-04 キヤノン株式会社 光源装置、当該光源装置を有する露光装置
US7329884B2 (en) * 2004-11-08 2008-02-12 Nikon Corporation Exposure apparatus and exposure method
JP5156192B2 (ja) * 2006-01-24 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
WO2008003442A1 (en) * 2006-07-03 2008-01-10 Carl Zeiss Smt Ag Method for revising/repairing a lithographic projection objective
JP5551722B2 (ja) * 2006-08-29 2014-07-16 ギガフォトン株式会社 極端紫外光源装置用ドライバーレーザ
JP5086677B2 (ja) * 2006-08-29 2012-11-28 ギガフォトン株式会社 極端紫外光源装置用ドライバーレーザ
JP5179793B2 (ja) * 2007-07-18 2013-04-10 ギガフォトン株式会社 極端紫外光源用ドライバレーザ
JP5758569B2 (ja) * 2008-06-12 2015-08-05 ギガフォトン株式会社 スラブ型レーザ装置
JP5833806B2 (ja) * 2008-09-19 2015-12-16 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置用レーザ光源装置及び極端紫外光源装置用レーザ光源の調整方法
JP5587578B2 (ja) * 2008-09-26 2014-09-10 ギガフォトン株式会社 極端紫外光源装置およびパルスレーザ装置
JP5536401B2 (ja) * 2008-10-16 2014-07-02 ギガフォトン株式会社 レーザ装置および極端紫外光光源装置
WO2010070540A1 (en) * 2008-12-16 2010-06-24 Philips Intellectual Property & Standards Gmbh Method and device for generating euv radiation or soft x-rays with enhanced efficiency
JP5619779B2 (ja) 2009-02-13 2014-11-05 ケーエルエー−テンカー コーポレイション 高温プラズマを持続させるための光ポンピング
JP6021454B2 (ja) * 2011-10-05 2016-11-09 ギガフォトン株式会社 極端紫外光生成装置および極端紫外光生成方法
KR102562520B1 (ko) * 2019-05-22 2023-08-01 사이머 엘엘씨 다수의 레이저 빔을 생성하는 장치 및 방법
JP7382424B2 (ja) * 2019-05-22 2023-11-16 サイマー リミテッド ライアビリティ カンパニー 複数の深紫外光発振器のための制御システム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1365635A1 (de) * 2002-05-13 2003-11-26 Innolite AB Verfahren und Vorrichtung zur Strahlungserzeugung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3715800B2 (ja) * 1998-10-02 2005-11-16 三菱電機株式会社 レーザ照射装置
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
DE10305701B4 (de) * 2003-02-07 2005-10-06 Xtreme Technologies Gmbh Anordnung zur Erzeugung von EUV-Strahlung mit hohen Repetitionsraten

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1365635A1 (de) * 2002-05-13 2003-11-26 Innolite AB Verfahren und Vorrichtung zur Strahlungserzeugung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BERGLUND M ET AL: "ULTRAVIOLET PREPULSE FOR ENHANCED X-RAY EMISSION AND BRIGHTNESS FROM DROPLET-TARGET LASER PLASMAS", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.117027, vol. 69, no. 12, 16 September 1996 (1996-09-16), pages 1683 - 1685, XP000629166, ISSN: 0003-6951 *
RYMELL L ET AL: "Droplet target for low-debris laser-plasma soft X-ray generation", OPTICS COMMUNICATIONS, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL LNKD- DOI:10.1016/0030-4018(93)90651-K, vol. 103, no. 1-2, 1 November 1993 (1993-11-01), pages 105 - 110, XP024455371, ISSN: 0030-4018, [retrieved on 19931101] *

Also Published As

Publication number Publication date
EP1730764A2 (de) 2006-12-13
JP2007529903A (ja) 2007-10-25
WO2005089131A2 (en) 2005-09-29
WO2005089131A3 (en) 2006-06-08
KR20060125905A (ko) 2006-12-06

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