EP1654914A2 - Extreme uv and soft x ray generator - Google Patents
Extreme uv and soft x ray generatorInfo
- Publication number
- EP1654914A2 EP1654914A2 EP04744676A EP04744676A EP1654914A2 EP 1654914 A2 EP1654914 A2 EP 1654914A2 EP 04744676 A EP04744676 A EP 04744676A EP 04744676 A EP04744676 A EP 04744676A EP 1654914 A2 EP1654914 A2 EP 1654914A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- gas
- electrode
- radiation
- source according
- gas discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 43
- 210000002381 plasma Anatomy 0.000 description 23
- 230000003628 erosive effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
Definitions
- the invention relates to a gas discharge source according to the preamble of claim 1.
- Preferred fields of application are those which require extreme ultraviolet and / or soft X-rays in the wavelength range from approximately 1 nm to 20 nm, in particular semiconductor lithography.
- a device of the generic type is disclosed in WO 99/29145. 1 shows an electrode arrangement in which there is a gas-filled interelectrode space between two electrodes.
- the two electrodes each have an opening through which an axis of symmetry is defined.
- the device operates in an environment of constant gas pressure. When high voltage is applied to the electrodes, there is a gas breakdown that depends on the pressure and the electrode spacing. The pressure of the gas and the electrode spacing are chosen so that the system works on the left branch of the Paschen curve and as a result there is no electrical breakdown between the electrodes.
- Gas discharge cannot spread between the electrodes, because in this case the mean free path of the charge carriers is greater than the distance between the electrodes. Instead, the gas discharge seeks a longer path, since a sufficient number of ionizing impacts are only possible to trigger the discharge if the discharge gap is sufficiently large.
- This longer path can be specified through the electrode openings, via which the axis of symmetry is defined.
- a current-carrying plasma channel of axially symmetrical shape is formed corresponding to the electrode openings.
- the very high discharge current builds up a magnetic field around the current path.
- the resulting Lorentz force constricts the plasma, the plasma being heated to very high temperatures, whereby it emits radiation of a very short wavelength, in particular in the EUV and soft X-ray wavelength range.
- the decoupling of the Radiation occurs in the axial direction along the axis of symmetry through the opening of one of the electrodes.
- the plasmas should have an axial extent between 1 to 2 mm and a diameter of likewise 1 to 2 mm and should be optically accessible at an observation angle of 45 to 60 degrees. It is generally known that such plasmas are optimally generated for this application in electrical discharges with pulse energies in the range of a few joules, a current pulse duration around 100 ns and current amplitudes between 10 and 30 kA.
- the optimal neutral gas pressure is typically in the range of a few Pa to a few 10 Pa.
- the starting radius for the compression of the plasma which is essentially determined by the openings in the electrode system, is in the range of a few mm.
- the distance between the electrodes is between 3 and 10 mm.
- WO 01/01736 AI discloses a generic device in which an auxiliary electrode is additionally provided between the main electrodes as a means of increasing the conversion efficiency and has an opening on the axis of symmetry.
- DE 101 34 033 AI discloses a generic device in which the gas pressure of the gas filling near an electrode designed as a cathode is higher than in a region of the discharge vessel distant therefrom.
- the devices described in the prior art are unable to provide the high powers required for many applications, in particular for semiconductor lithography. Improvements are therefore necessary in order to achieve the highest possible radiation intensity.
- a gas discharge source in particular for generating extreme ultraviolet and / or soft X-rays, in which there is a gas-filled electrode interspace 3 between two electrodes 1, 2 in the devices for admission and pumping off gas are present in which an electrode 1 has an opening 5 defining an axis of symmetry 4 and intended for the exit of radiation and in which between the two electrodes 1, 2 there is at least one opening 7 on the axis of symmetry 4 and as differential Pump stage acting aperture 6 is present.
- the invention is based on the knowledge that by introducing an aperture 6 having an opening 7 on the axis of symmetry 4 and by using this aperture as a differential pumping stage, certain desired pressure conditions in the electrode interspace 3 can be set in a simple manner.
- the installation of such an aperture 6 in the electrode interspace 3 provides a larger area through which heat can be dissipated. In this way, the thermal load on the electrodes 1, 2 can be reduced, their lifespan can thus be increased and the mean power or pulse energy that can be coupled into the system and thus also the radiation power that can be achieved can be increased.
- the electrode gap 3 is intended to denote the entire space between the two electrodes 1, 2.
- the screen 6 It is divided into two sub-areas by the screen 6, which are each delimited by one of the electrodes (including their opening) and the screen (including their opening).
- the electrode 2 which is limited by the diaphragm 6 and the electrode 2 facing away from the exit side of the radiation
- the localization of the high impedance region takes place at the desired location near the electrode 1 facing the exit side of the radiation. This has the advantage that the radiation can be used optimally from the point of view of accessibility under large observation angles.
- the current is transported from the cathode to this point in a diffuse low-impedance plasma.
- This hardly leads to any losses. For this reason too, an increase in radiation power can be achieved.
- the gas pressure in the electrode gap 3 and the distance between the two electrodes are selected such that the plasma is ignited on the left branch of the Paschen curve, ie the ionization processes start along the long electrical field lines, which preferably occur in the area of the openings of the anode and cathode , The ignition therefore takes place in the gas volume and is therefore particularly low in wear.
- the first alternative has the advantage that the compressed plasma, which can be generated in this case near the anode 1 by the device according to the invention, is thus comparatively far from the cathode 2. This leads to less erosion of the cathode. Above all, the generation of the pinch plasma is less dependent on geometric changes in the cathode. Thus higher erosion can be tolerated.
- the electrode 2 facing away from the exit side of the radiation is a hollow electrode having a cavity 8, in particular as a hollow cathode.
- the gas is pre-ionized, followed by the formation of a dense hollow cathode plasma.
- Such is particularly well suited to the necessary charge carriers (electrons) to build up a low-resistance channel in the
- the hollow electrode 2 can have one or more openings 9 to the electrode interspace 3. Since the latter alternative distributes the total current to a plurality of electrode openings 9, the local load on the electrode 2 can be reduced in this way and the service life of the electrode system or the electrical power that can be coupled in can be increased. Trigger devices may additionally be present in the cavity 8 of the electrode 2 designed as a hollow cathode. In this way, the ignition of the discharge can be triggered precisely as required. This is particularly advantageous in the case of a hollow cathode with several openings.
- the trigger device can be configured, for example, as an auxiliary electrode in the hollow cathode, with which the discharge can be triggered by switching the auxiliary electrode from a potential which is positive with respect to the cathode to a lower potential, for example cathode potential.
- Further possibilities for triggering are the injection or generation of charge carriers in the hollow cathode via a glow discharge trigger, a high-dielectric trigger or the triggering of photoelectrons or metal vapor via light or laser pulses. It is expedient to design the diaphragm 6 in such a way that it contributes at most to a small extent to the transport of electricity. Instead, all or at least the major part of the current transport is largely transmitted only from the cathode to the anode via the plasma channel.
- the diaphragm 6 or at least part of the diaphragm 6 consists of a material that can be machined well. It is also advantageous if the material of at least part of the screen 6 has a high thermal conductivity. This enables effective cooling or heat dissipation.
- ceramic in particular aluminum oxide or lanthanum hexaboride, can be used as the material for at least part of the diaphragm 6.
- the part of the screen 6 near the opening 7, for which the risk of erosion of the screen 6 is greatest due to the proximity to the plasma channel it is advantageous to make this part from a particularly discharge-resistant material, in particular, for example, from molybdenum, tungsten, Titanium nitride or lanthanum hexaboride.
- a particularly discharge-resistant material in particular, for example, from molybdenum, tungsten, Titanium nitride or lanthanum hexaboride.
- the occurrence of erosion on the diaphragm 6 is greatly restricted and the service life of the device is increased.
- these are designed as metal screens 6, 6 ', 6 "spaced apart from one another by insulators the multi-stage ignition of cathode spots and thus the current transport is effectively suppressed.
- This provides the advantage as when using a pure insulator.
- the installation of metal enables a desired low-inductance structure of the electrode system in comparison to a pure ceramic plate.
- deposits of metal vapor build up the thickness of the screen 6 can be in a range between approximately 1 to 20 mm. Considering the cooling aspect, the thickest possible screens should be provided The diameter of the aperture 6 should be approximately between 4 and 20 mm.
- gas inlets 12 it is possible to arrange gas inlets 12 in such a way that their openings point to the partial region of the gas-filled electrode interspace 3 which is delimited by the diaphragm 6 and by the electrode 2 facing away from the exit side of the radiation.
- This allows the gas pressure to be set specifically in this area.
- a higher gas pressure can be provided there than in the partial area of the electrode space 3 delimited by the orifice 6 and the electrode 1 facing the exit side of the radiation, or a certain desired pressure difference can be set.
- Electrode gap 3 additionally introduced a filling gas by means of the gas inlets 12 present there, which, compared to the working gas, has very low radiation losses, such as helium or hydrogen, for the pulsed currents used. In this way, the impedance of the plasma is kept low in comparison to the EUV-emitting area and the energy coupling is more effective.
- the working gas intended for the generation of the pinch plasma and the resulting emission of EUV radiation such as xenon or, for example, is provided in the partial area of the electrode interspace 3 delimited by the diaphragm 6 and by the electrode 1 facing the exit side of the radiation Neon embedded.
- the gas can be pumped off particularly easily from a pumping device located outside the electrode gap through the opening of the through the exit side of the radiation facing electrode 1.
- FIG.1 A drawing taken from WO 99/29145, which represents the prior art.
- Fig.2 Schematic representation of the device according to the invention
- FIG 3 shows a schematic representation of an embodiment in which part of the diaphragm consists of a discharge-resistant material.
- FIG. 4 Schematic representation of an embodiment in which several metal panels are present.
- 5 shows a schematic representation of an embodiment in which the hollow electrode has a plurality of openings.
- An electrode 2 shows an embodiment of the electrode system of the device according to the invention.
- An electrode 2 is designed as a hollow electrode 8 having a cavity and is used as a cathode.
- the other electrode 1 functions as an anode. The decoupling of the gas-filled inside
- the anode opening 5 widens in the coupling-out direction.
- a diaphragm 6 is arranged between the electrodes 1, 2 and has a continuous opening 7 on the axis of symmetry 4 defined by the anode opening 5.
- the hollow cathode has an opening 9 to the electrode interspace 3, which is also located on the axis of symmetry 4.
- FIG. 5 shows an embodiment of the device according to the invention, in which a plurality of metal screens 6, 6 ', 6 "are arranged between the electrodes 1, 2, each spaced apart by insulators 11.
- FIG. 5 shows a further embodiment, in which the Cathode 2 has three openings 9,9 ', 9 ".
- the central opening 9 lying on the axis of symmetry is designed as a blind hole.
- the two other openings 9 ′, 9 ′′ are continuous openings between the cavity 8 of the cathode 2 and the electrode interspace 3.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- X-Ray Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Reciprocating Pumps (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10336273A DE10336273A1 (en) | 2003-08-07 | 2003-08-07 | Device for generating EUV and soft X-radiation |
PCT/IB2004/051323 WO2005015602A2 (en) | 2003-08-07 | 2004-07-29 | Extreme uv and soft x ray generator |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1654914A2 true EP1654914A2 (en) | 2006-05-10 |
EP1654914B1 EP1654914B1 (en) | 2009-03-25 |
EP1654914B8 EP1654914B8 (en) | 2009-08-12 |
Family
ID=34129504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04744676A Expired - Lifetime EP1654914B8 (en) | 2003-08-07 | 2004-07-29 | Extreme uv and soft x ray generator |
Country Status (9)
Country | Link |
---|---|
US (1) | US7734014B2 (en) |
EP (1) | EP1654914B8 (en) |
JP (1) | JP4814093B2 (en) |
KR (1) | KR101058068B1 (en) |
CN (1) | CN100482030C (en) |
AT (1) | ATE427026T1 (en) |
DE (2) | DE10336273A1 (en) |
TW (1) | TW200515458A (en) |
WO (1) | WO2005015602A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007020742B8 (en) * | 2007-04-28 | 2009-06-18 | Xtreme Technologies Gmbh | Arrangement for switching large electrical currents via a gas discharge |
US20130098555A1 (en) * | 2011-10-20 | 2013-04-25 | Applied Materials, Inc. | Electron beam plasma source with profiled conductive fins for uniform plasma generation |
US9129777B2 (en) | 2011-10-20 | 2015-09-08 | Applied Materials, Inc. | Electron beam plasma source with arrayed plasma sources for uniform plasma generation |
US8951384B2 (en) | 2011-10-20 | 2015-02-10 | Applied Materials, Inc. | Electron beam plasma source with segmented beam dump for uniform plasma generation |
US9443700B2 (en) | 2013-03-12 | 2016-09-13 | Applied Materials, Inc. | Electron beam plasma source with segmented suppression electrode for uniform plasma generation |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
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US3005931A (en) * | 1960-03-29 | 1961-10-24 | Raphael A Dandl | Ion gun |
NL298175A (en) * | 1962-11-20 | |||
JPS5763755A (en) * | 1980-10-03 | 1982-04-17 | Fujitsu Ltd | X-ray generating appratus |
JPS61218056A (en) * | 1985-03-25 | 1986-09-27 | Nippon Telegr & Teleph Corp <Ntt> | X-ray generator |
JPH0687408B2 (en) * | 1986-03-07 | 1994-11-02 | 株式会社日立製作所 | Plasma X-ray generator |
KR900003310B1 (en) * | 1986-05-27 | 1990-05-14 | 리가가구 겡큐소 | Ion producing apparatus |
US4841197A (en) * | 1986-05-28 | 1989-06-20 | Nihon Shinku Gijutsu Kabushiki Kaisha | Double-chamber ion source |
US4894546A (en) * | 1987-03-11 | 1990-01-16 | Nihon Shinku Gijutsu Kabushiki Kaisha | Hollow cathode ion sources |
JPH01117253A (en) * | 1987-10-30 | 1989-05-10 | Hamamatsu Photonics Kk | Plasma x-ray generation device |
JP2572787B2 (en) * | 1987-11-18 | 1997-01-16 | 株式会社日立製作所 | X-ray generator |
JPH01243349A (en) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | Plasma extreme ultraviolet light generator |
DE3927089C1 (en) * | 1989-08-17 | 1991-04-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | |
JP2819420B2 (en) * | 1989-11-20 | 1998-10-30 | 東京エレクトロン株式会社 | Ion source |
IT1246682B (en) * | 1991-03-04 | 1994-11-24 | Proel Tecnologie Spa | CABLE CATHOD DEVICE NOT HEATED FOR THE DYNAMIC GENERATION OF PLASMA |
US5397956A (en) * | 1992-01-13 | 1995-03-14 | Tokyo Electron Limited | Electron beam excited plasma system |
KR100271244B1 (en) * | 1993-09-07 | 2000-11-01 | 히가시 데쓰로 | Eletron beam excited plasma system |
US5467362A (en) * | 1994-08-03 | 1995-11-14 | Murray; Gordon A. | Pulsed gas discharge Xray laser |
US6031241A (en) * | 1997-03-11 | 2000-02-29 | University Of Central Florida | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
US6576917B1 (en) | 1997-03-11 | 2003-06-10 | University Of Central Florida | Adjustable bore capillary discharge |
US6815700B2 (en) * | 1997-05-12 | 2004-11-09 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
DE19753696A1 (en) | 1997-12-03 | 1999-06-17 | Fraunhofer Ges Forschung | Device and method for generating extreme ultraviolet radiation and soft X-rays from a gas discharge |
DE19962160C2 (en) * | 1999-06-29 | 2003-11-13 | Fraunhofer Ges Forschung | Devices for generating extreme ultraviolet and soft X-rays from a gas discharge |
DE10051986A1 (en) * | 2000-10-20 | 2002-05-16 | Schwerionenforsch Gmbh | Hollow cathode for use in a gas discharge process for ion stripping |
DE10139677A1 (en) * | 2001-04-06 | 2002-10-17 | Fraunhofer Ges Forschung | Method and device for generating extremely ultraviolet radiation and soft X-rays |
DE10134033A1 (en) * | 2001-04-06 | 2002-10-17 | Fraunhofer Ges Forschung | Method and device for generating extreme ultraviolet radiation / soft X-rays |
DE10151080C1 (en) * | 2001-10-10 | 2002-12-05 | Xtreme Tech Gmbh | Device for producing extreme ultraviolet radiation used in the semiconductor industry comprises a discharge chamber surrounded by electrode housings through which an operating gas flows under a predetermined pressure |
US7342236B2 (en) * | 2004-02-23 | 2008-03-11 | Veeco Instruments, Inc. | Fluid-cooled ion source |
-
2003
- 2003-08-07 DE DE10336273A patent/DE10336273A1/en not_active Ceased
-
2004
- 2004-07-29 CN CNB2004800226731A patent/CN100482030C/en not_active Expired - Fee Related
- 2004-07-29 WO PCT/IB2004/051323 patent/WO2005015602A2/en active Application Filing
- 2004-07-29 US US10/567,038 patent/US7734014B2/en not_active Expired - Fee Related
- 2004-07-29 AT AT04744676T patent/ATE427026T1/en not_active IP Right Cessation
- 2004-07-29 KR KR1020067002392A patent/KR101058068B1/en not_active IP Right Cessation
- 2004-07-29 DE DE502004009224T patent/DE502004009224D1/en not_active Expired - Lifetime
- 2004-07-29 JP JP2006522465A patent/JP4814093B2/en not_active Expired - Fee Related
- 2004-07-29 EP EP04744676A patent/EP1654914B8/en not_active Expired - Lifetime
- 2004-08-04 TW TW093123359A patent/TW200515458A/en unknown
Non-Patent Citations (1)
Title |
---|
See references of WO2005015602A2 * |
Also Published As
Publication number | Publication date |
---|---|
WO2005015602A3 (en) | 2005-06-02 |
JP2007501997A (en) | 2007-02-01 |
WO2005015602A2 (en) | 2005-02-17 |
JP4814093B2 (en) | 2011-11-09 |
EP1654914B8 (en) | 2009-08-12 |
CN1833472A (en) | 2006-09-13 |
DE502004009224D1 (en) | 2009-05-07 |
KR20060054422A (en) | 2006-05-22 |
DE10336273A1 (en) | 2005-03-10 |
US20080143228A1 (en) | 2008-06-19 |
TW200515458A (en) | 2005-05-01 |
CN100482030C (en) | 2009-04-22 |
EP1654914B1 (en) | 2009-03-25 |
ATE427026T1 (en) | 2009-04-15 |
US7734014B2 (en) | 2010-06-08 |
KR101058068B1 (en) | 2011-08-22 |
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Legal Events
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