EP1614145A2 - Siliziumsubstrat mit positiven tzprofilen mit definiertem b schungswinkel und verfahren zur herstellung - Google Patents
Siliziumsubstrat mit positiven tzprofilen mit definiertem b schungswinkel und verfahren zur herstellungInfo
- Publication number
- EP1614145A2 EP1614145A2 EP04727512A EP04727512A EP1614145A2 EP 1614145 A2 EP1614145 A2 EP 1614145A2 EP 04727512 A EP04727512 A EP 04727512A EP 04727512 A EP04727512 A EP 04727512A EP 1614145 A2 EP1614145 A2 EP 1614145A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- etching
- silicon substrate
- mask
- steps
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims abstract description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title description 7
- 238000000034 method Methods 0.000 claims abstract description 66
- 229920000642 polymer Polymers 0.000 claims abstract description 16
- 238000006116 polymerization reaction Methods 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 7
- 238000002120 advanced silicon etching Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 235000013312 flour Nutrition 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- WMFOQBRAJBCJND-UHFFFAOYSA-M lithium hydroxide Inorganic materials [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Inorganic materials [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- MHHJTXLHRIXMMC-UHFFFAOYSA-N [F].[Cl].[Br] Chemical compound [F].[Cl].[Br] MHHJTXLHRIXMMC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00563—Avoid or control over-etching
- B81C1/00571—Avoid or control under-cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/033—Trenches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0369—Static structures characterized by their profile
- B81B2203/0384—Static structures characterized by their profile sloped profile
Definitions
- the invention relates to a silicon substrate with positive etching profiles with a defined angle of repose.
- the invention further relates to a method for producing a silicon substrate with a positive etching profile with a defined slope angle. With the procedure can be
- microsystem technology Numerous components of microsystem technology are manufactured on the basis of structured silicon substrates.
- this relates to the components of micromechanics, microfluidics and power electronics.
- the process of silicon structuring is of paramount importance in the manufacture of these components.
- plasma-assisted silicon etching processes have been developed in connection with the rapid development of semiconductor technology.
- a variety of possible system concepts for plasma etching systems and a large number of process parameters enable the etching processes to be varied over a wide range.
- plasma etching processes have the advantage in principle that anisotropic structuring is possible regardless of the crystal orientation.
- Plasma chemical silicon etching processes are mostly based on flour chemistry.
- SF ⁇ sulfur hexafluoride
- the process is normally isotropic, so that the mask undercut is approximately equal to the etching depth, see H. v. Boenig: Fundamentals of Plasma Chemistry and Technology, p. 174, The Research Institute of Plasma Chemistry and Technology Carlsbad, CA.
- Anisotropy of the etching process can a. can be achieved in the following ways:
- the composition of the etching gas is adjusted so that chemical reactions take place during the etching process which lead to the sidewalls being covered with etch-resistant layers, see I. W. Rangelow, H. Löschner: J. Vac Sei. Technol. B 13 (6), Nov / Dec 1995, 2394-2399 and K.-M. Chang, T.-H Yeh, IC. Deng, H.-C. Lin: Journal of Applied Physics - Sept 1, 1996, Vol. 80, Issue
- a mixture of SF 6 and oxygen is often used as the etching gas.
- the silicon reacts with oxygen species to form SiO x .
- the oxide layer is removed more quickly by flour radicals, supported by ion bombardment, than on the side walls, so that the etching process is given a preferred direction.
- An optimal relationship between sufficient sidewall passivation and high etching rate is very difficult to set.
- the control of the passivation limits the achievable etching depth, see IW Rangelow, H. Löschner: J. Vac. Be. Technol. B 13 (6), Nov / Dec 1995, 2394-2399 and others
- cryoprocesses in connection with SF 6 - / 0 2 chemistry
- a high concentration of reactive etching species is the prerequisite for achieving high etching rates. In this case, however, there is also a more intensive etching attack on the side walls.
- the probability of spontaneous reactions between silicon and fluorine on the side walls drastically decreases.
- the lateral etching rate decreases with the chemical reaction rate.
- an intensive ion bombardment acts at the bottom of the structures. This creates radical sites and stimulates reactive particles so that chemical reactions continue to take place. This results in a significantly higher vertical etching rate, see I. W. Rangelow, H. Löschner: J. Vac. Be. Technol. B 13 (6), Nov / Dec 1995, 2394-2399.
- the ASE process is based on a known process according to DE 42 41 045 Cl, which was developed by Lärmer and Schilp. It is a cyclical process that consists of alternating deposition and etching steps. During the deposition intervals, the entire substrate surface is passivated by the deposition of a polymer layer. In the etching interval, the polymer layer is ion bombarded on all horizontal surfaces away. At the bottom of the structures, the exposed silicon reacts with fluorine to volatilize
- Characteristic features of the ASE process are:.
- any lateral shape of the structures e.g. channel structures, through holes through Si wafers, comb, grid structures
- the object of the invention is therefore to provide a solution with which positive etching profiles with a defined slope angle ⁇ of the side walls can be produced in silicon.
- the object is achieved with a silicon substrate with the features specified in claim 1.
- the object is achieved by a method with the features mentioned in claim 2.
- the silicon substrate covered with a mask is etched so isotropically that the mask undercut u is approximately equal to the etching depth Et, then the etching depth is increased so that the mask undercut remains constant and the etching front takes on a new course, with this step the Side walls of the structure covered with a polymer then the polymer on the side walls of the structure is removed. The aforementioned steps are repeated until the desired etching profile and depth is generated.
- the method according to the invention is a plasma etching process (PPE process - Positive Profile Etching Process) with which silicon substrates can be structured in such a way that positive etching profiles are created in the process.
- PPE process - Positive Profile Etching Process The angle of inclination of the side walls of the etched structures can be defined in the range between 60 and 88 ° by a suitable choice of the process parameters.
- open (i.e. to be etched) area and process variant etching rates of 3 ... 5 ⁇ m / min and etching depths of up to 200 ⁇ m can be achieved.
- a limitation of the achievable etching depth only results from. the. Service life of the etching mask, but not from process-related parameters.
- Figure 1 shows a typical structure after an isotropic etching process in pure SFö plasma
- Figure 2 shows a structure created using the ASE process
- Figure 3 shows a desired etching profile with a defined slope angle ß
- Figure 4 shows a schematic structure of a plasma etching system
- Figure 5 shows a silicon wafer with an etching mask
- Figure 6 shows the result of isotropic Si etching in pure SF 6 plasma
- Figure 7 shows a result after isotropic Si etching and subsequent modified ASE
- Figure 9 shows the dependence of the Bosch angle of the etched structure on
- Figure 18 is an embossing tool made of silicon
- Figure 19 two structures in silicon with a Y-shaped etching profile
- Figure 20 shows a silicon structure for liquid storage cells
- Figure 21 a trench in silicon with slightly inclined side walls
- Figure 22 shows a metal bridge structure on silicon
- Figure 23 shows a Cu bridge structure made using the PPE process
- Figure 24 shows an exposed Cu bridge
- Figures 1 and 2 serve to explain the state of the art.
- Figure 1 shows a typical structure after an isotropic etching process in pure SF 6 plasma.
- Figure 2 shows a structure created using the ASE process.
- Figure 3 shows schematically a desired positive etching profile with the slope angle ß shown.
- This system can process 4 "or 6" silicon wafers.
- the plasma reactor is charged via a lock 1.
- the silicon wafers 2 are held on a substrate electrode by a mechanical clamp 3 and cooled by means of helium back cooling.
- a pump system consisting of rotary vane 4 and turbomolecular pump 5 is provided for vacuum generation.
- the process gas pressure can be set in the range of 1 ... 15 Pa.
- Nitrogen (N 2 ), oxygen (0 2 ), argon (Ar), tetrafluoromethane (CF), sulfur hexafluoride (SF ⁇ ) and octafluorocyclobutane (C ⁇ F S ) can be supplied as process gases via a gas inlet 7.
- a main component of the system is the high-density ICP plasma source 6, into which an RF power of at most 1 kW can be coupled.
- the substrate electrode is capable of bias and can have a maximum RF power of 300 W.
- the frequency is 13.56 MHz in each case. Cyclic processes can be carried out on the system.
- the etching depth can be measured with the help of a surface profilometer from TENCOR INSTRUMENTS with an accuracy of + 5nm.
- the method according to the invention is carried out cyclically.
- the process consists of three steps, which are always repeated in the same order.
- the procedure has the following sequence
- the silicon substrate is provided with an etching mask as shown in Figure 5.
- Mask materials such as photoresist, thermal silicon oxide (Si0 2 ), photoresist and Si0 2 combined as well as metal masks made of aluminum or copper are used.
- the silicon substrate is etched isotropically in a pure SFg plasma as shown in Figure 6.
- the mask undercut u is approximately equal to the etching depth ⁇ t .
- the silicon substrate is subjected to a modified ASE process in accordance with Figure 7. Since the ASE process etches absolutely vertically, the etching depth is increased, but the mask undercut remains constant, the etching front takes on a new course. The side walls of the structures are covered with a polymer after the ASE process.
- the polymer on the side walls of the structure is removed by 0 2 -RIE and an etched structure is obtained as in Figure 8.
- Figure 9 shows this relationship.
- Figures 10 to 17 show examples of real structures with a decreasing angle of repose ß, which were etched accordingly.
- Structured silicon substrates can be used as a mold for casting components from polymers or the like. pourable substances are used.
- the result of the silicon structuring is of crucial importance for the separability of the cast parts from the mold. Slope angles of the side walls ⁇ 90 ° make it much easier to remove the molded parts.
- Figure 18 shows a silicon structure with an embankment angle of 88 °, which is suitable as an embossing tool for the production of polymer parts with channel structures for medical technology.
- Microfluidic components often contain channel systems and nozzles, which are created by structuring silicon substrates accordingly.
- storage cells for liquids can have a shape as shown in Figure 20.
- the structures shown were also generated using the method according to the invention.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
- Weting (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10318568A DE10318568A1 (de) | 2003-04-15 | 2003-04-15 | Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung |
PCT/DE2004/000804 WO2004093162A2 (de) | 2003-04-15 | 2004-04-15 | Siliziumsubstrat mit positiven ätzprofilen mit definiertem böschungswinkel und verfahren zur herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1614145A2 true EP1614145A2 (de) | 2006-01-11 |
Family
ID=33185711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04727512A Withdrawn EP1614145A2 (de) | 2003-04-15 | 2004-04-15 | Siliziumsubstrat mit positiven tzprofilen mit definiertem b schungswinkel und verfahren zur herstellung |
Country Status (4)
Country | Link |
---|---|
US (2) | US20060219654A1 (de) |
EP (1) | EP1614145A2 (de) |
DE (1) | DE10318568A1 (de) |
WO (1) | WO2004093162A2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10318568A1 (de) * | 2003-04-15 | 2004-11-25 | Technische Universität Dresden | Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung |
DE102006043389A1 (de) * | 2006-09-06 | 2008-03-27 | Technische Universität Dresden | Verfahren zum Plasmaätzen zur Erzeugung positiver Ätzprofile in Siliziumsubstraten |
CN102910572B (zh) * | 2011-08-05 | 2015-08-19 | 美新半导体(无锡)有限公司 | 释放mems悬桥结构的刻蚀方法 |
TWI513993B (zh) | 2013-03-26 | 2015-12-21 | Ind Tech Res Inst | 三軸磁場感測器、製作磁場感測結構的方法與磁場感測電路 |
US20150011073A1 (en) * | 2013-07-02 | 2015-01-08 | Wei-Sheng Lei | Laser scribing and plasma etch for high die break strength and smooth sidewall |
US11268927B2 (en) | 2016-08-30 | 2022-03-08 | Analog Devices International Unlimited Company | Electrochemical sensor, and a method of forming an electrochemical sensor |
US10620151B2 (en) | 2016-08-30 | 2020-04-14 | Analog Devices Global | Electrochemical sensor, and a method of forming an electrochemical sensor |
US11022579B2 (en) | 2018-02-05 | 2021-06-01 | Analog Devices International Unlimited Company | Retaining cap |
CN109725375A (zh) * | 2018-12-21 | 2019-05-07 | 中国电子科技集团公司第四十四研究所 | 一种ⅲ-ⅴ族材料纳米光栅刻蚀方法 |
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US4639288A (en) * | 1984-11-05 | 1987-01-27 | Advanced Micro Devices, Inc. | Process for formation of trench in integrated circuit structure using isotropic and anisotropic etching |
US4855017A (en) * | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US4902377A (en) * | 1989-05-23 | 1990-02-20 | Motorola, Inc. | Sloped contact etch process |
JPH0428229A (ja) * | 1990-05-23 | 1992-01-30 | Mitsubishi Electric Corp | コンタクトホールの形成方法およびエッチング装置 |
DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
JPH08186095A (ja) * | 1994-12-28 | 1996-07-16 | Kawasaki Steel Corp | コンタクトホールの形成方法およびエッチング装置 |
ATE251341T1 (de) * | 1996-08-01 | 2003-10-15 | Surface Technology Systems Plc | Verfahren zur ätzung von substraten |
US5914280A (en) * | 1996-12-23 | 1999-06-22 | Harris Corporation | Deep trench etch on bonded silicon wafer |
DE19736370C2 (de) * | 1997-08-21 | 2001-12-06 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silizium |
US6180466B1 (en) * | 1997-12-18 | 2001-01-30 | Advanced Micro Devices, Inc. | Isotropic assisted dual trench etch |
US6117786A (en) * | 1998-05-05 | 2000-09-12 | Lam Research Corporation | Method for etching silicon dioxide using fluorocarbon gas chemistry |
US6235643B1 (en) * | 1999-08-10 | 2001-05-22 | Applied Materials, Inc. | Method for etching a trench having rounded top and bottom corners in a silicon substrate |
US6458615B1 (en) * | 1999-09-30 | 2002-10-01 | Carnegie Mellon University | Method of fabricating micromachined structures and devices formed therefrom |
US6582861B2 (en) * | 2001-03-16 | 2003-06-24 | Applied Materials, Inc. | Method of reshaping a patterned organic photoresist surface |
GB2378314B (en) * | 2001-03-24 | 2003-08-20 | Esm Ltd | Process for forming uniform multiple contact holes |
DE10318568A1 (de) | 2003-04-15 | 2004-11-25 | Technische Universität Dresden | Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung |
US7179717B2 (en) * | 2005-05-25 | 2007-02-20 | Micron Technology, Inc. | Methods of forming integrated circuit devices |
-
2003
- 2003-04-15 DE DE10318568A patent/DE10318568A1/de not_active Ceased
-
2004
- 2004-04-15 US US10/553,728 patent/US20060219654A1/en not_active Abandoned
- 2004-04-15 EP EP04727512A patent/EP1614145A2/de not_active Withdrawn
- 2004-04-15 WO PCT/DE2004/000804 patent/WO2004093162A2/de active Application Filing
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2005
- 2005-10-27 US US11/261,241 patent/US7498266B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
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See references of WO2004093162A3 * |
Also Published As
Publication number | Publication date |
---|---|
US7498266B2 (en) | 2009-03-03 |
US20060219654A1 (en) | 2006-10-05 |
DE10318568A1 (de) | 2004-11-25 |
WO2004093162A3 (de) | 2005-02-24 |
WO2004093162A2 (de) | 2004-10-28 |
US20060099811A1 (en) | 2006-05-11 |
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