EP1557865A1 - Tube rayons-X à microfoyer pour appareil d'inspection microscopique - Google Patents

Tube rayons-X à microfoyer pour appareil d'inspection microscopique Download PDF

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Publication number
EP1557865A1
EP1557865A1 EP04001490A EP04001490A EP1557865A1 EP 1557865 A1 EP1557865 A1 EP 1557865A1 EP 04001490 A EP04001490 A EP 04001490A EP 04001490 A EP04001490 A EP 04001490A EP 1557865 A1 EP1557865 A1 EP 1557865A1
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EP
European Patent Office
Prior art keywords
ray
electron
inspection apparatus
target
electron source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04001490A
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German (de)
English (en)
Inventor
Keiji Yada
Hiromi Kai
Yasushi Saito
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Tohken Co Ltd
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Tohken Co Ltd
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Publication date
Application filed by Tohken Co Ltd filed Critical Tohken Co Ltd
Priority to EP04001490A priority Critical patent/EP1557865A1/fr
Publication of EP1557865A1 publication Critical patent/EP1557865A1/fr
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K7/00—Gamma- or X-ray microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/12—Cooling non-rotary anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/14—Arrangements for concentrating, focusing, or directing the cathode ray
    • H01J35/147—Spot size control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/12—Cooling
    • H01J2235/1204—Cooling of the anode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2807—X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/112—Non-rotating anodes
    • H01J35/116—Transmissive anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/16—Vessels; Containers; Shields associated therewith
    • H01J35/18—Windows
    • H01J35/186—Windows used as targets or X-ray converters

Definitions

  • the present invention relates to an X-ray inspection apparatus, and specifically, to an X-ray microscopic inspection apparatus capable of providing better resolution than 0.1 ⁇ m over a broad range of an accelerating voltage by using an electron source for emitting a high intensity electron flow and a lens system for focusing electrons on the X-ray target.
  • FIG. 1 shows a construction example of a conventional X-ray inspection apparatus.
  • the X-ray inspection apparatus in this example is designed so as to obtain a micro X-ray point source 23a by accelerating electrons Re from an electron source 21b by applying a high voltage between a grid 21a and an anode 21c using a thermionic emission cathode 21b as the electron source, and then focusing the electrons Re on a target 23 formed by a thin plate of high-melting point metal such as tungsten by electron lenses 22. Subsequently, the inside of a sample (object to be inspected) 10 is projected in magnifying mode by using the point-form X-ray Rx generated from the X-ray targets 23a and the microstructure inside of the sample is subjected to non-destructive perspective inspection.
  • the electron beam Re impinging on the target 23 is converted into the X-ray Rx thereon, however, its conversion efficiency is as extremely low as equal to or less than 1%, and most of the energy of the electron beam Re is converted into heat on, the target 23.
  • an X-ray since an X-ray has no electric charge, it can not be bent freely as an electron by using an electron lens.
  • the magnifying power is infinitely increased as the distance between the sample 10 and the X-ray detector 24 is taken larger, however, actually, since the X-ray amount per unit area is reduced in inverse proportion to the square of the distance, the upper limit of the magnifying power is determined by the balance between the sensitivity of the X-ray detector 24 and the X-ray amount or X-ray density on the X-ray detector of the magnified image.
  • the resolving power of the X-ray image transmitted through the sample 10 is more improved by making the X-ray source size (focal point size) smaller because the blurring amount is reduced.
  • the X-ray source size can be made smaller by focusing the electron into a small spot by the electron lens 22, however, since the electron beam amount included therein is reduced in reverse proportion to the square of the spot diameter and the X-ray amount is also reduced in response thereto, the final resolving power is determined by the balance between the electron spot diameter in which enough X-ray amount is produced and the sensitivity of the above described X-ray detector 24, and has a certain limit.
  • Non-patent Document 1 Nixon, "High-resolution X-ray projection microscopy", 1960, A232: pp. 475-485
  • Non-patent Document 2 Keiji Yada & Hisashi Ishikawa, "Projection X-ray Shadow Microscopy using SEM", Bulletin of the Research Institute for Scientific Measurements, Tohoku University, 1980, Vol. 29, No. 1, pp. 25-42
  • Non-patent Document 3 Keiji Yada & Kunio Shinohara, "Development of Soft X-ray Microscopy", 1980, Biophysics, Vol. 33, No. 4, pp.
  • Non-patent Document 4 Keiji Yada & Shoichi Takahashi, "High-Resolution Projection X-ray Microscopy", 1994, Chap. 8, pp. 133-150
  • Non-patent Document 5 Keiji Yada & Kunio Shinohara, "Development of Projection X-Ray Microscopy and Its Biological Applications” 1996, Bulletin of Aomori Public College, Vol. 1, pp. 2-13, for example.
  • Non-patent Document 1 there described that, regarding X-ray Shadow Microscopy, the limit of its resolving power has been 0.5 ⁇ m conventionally, however, the resolving power of 0.1 ⁇ m is achieved by using a high brightness electron emitter and avery thin metal film (0.1 ⁇ m in thickness) as the target at this time. In addition, there also described that the exposure time for obtaining a sheet of image is five minutes, and after Non-patent Document 1 is disclosed, studies for shortening the exposure time have been actively performed.
  • Non-patent Document 2 is a research report (bulletin of the research institute for scientific measurements, Tohoku University) on the projection X-ray shadow microscopy utilizing an irradiation system of an electron microscope, and there described that the resolving power of 0.1 ⁇ m is achieved. Additionally, theoretical analyses are performed regarding respective factors that affect the resolving power, and there derived the conclusion that the spot size of the X-ray source exerts the greatest effects on the resolving power. Furthermore, there described that, by converting a SEM (scanning electron microscope) to an X-ray microscope , scanning of the electron beam with a deflection coil is utilized for focusing.
  • SEM scanning electron microscope
  • Non-patent Document 3 is for explaining the trend in the X-ray microscopy to the present, and there explained that the soft X-ray microscope of a relatively short wavelength (0.1 to 10 nm) by specifically referring to the observation of biological samples.
  • the contents of Non-patent Document. 4 are substantially the same as those of Non-patent Document 2, however, there shown a densitometry profile of an X-ray image having the resolving power better than 0.1 ⁇ m (on 146 page in the main body).
  • Non-patent Document 5 is for explaining the X-ray microscope in an easily understandable way, and there described that the image quality becomes better by changing the target in relation to the sample that is difficult to provide contrast as is the case with Non-patent Documents 2, 3, and 4.
  • an electron source with higher brightness (greater current amount per unit area/unit solid angle) and greater emission current amount becomes required.
  • an electron lens system for assuring a great electron probe current amount as possible becomes also required.
  • devices for increasing the heat release effect of the target are required so that the target may not melt or evaporate even if the electron probe having such high current density impinges thereon.
  • the nano-technology extends across information, medical, environmental fields, and, for example, in a micromachine referred to in the medical field, the component constituting the machine becomes less than 1 ⁇ m and ready to enter nano order.
  • the current semiconductor technology is ever being directed to miniaturization, and non-destructive inspection in the class of the resolving power equal to or less than 0.1 ⁇ m never before possible using the micro X-ray source becomes a challenge that is required by all means.
  • integrated circuit from 180-130 nm at present to 70-100 nm.
  • the microstructure consisted principally of a light element become an object to be observed, and, for providing contrast to the image, it becomes an important challenge that the high resolution power is held even in the case of using an X-ray having a long wavelength by the low accelerating voltage of 10 to 20 kV, which has been difficult in the conventional X-ray inspection apparatus.
  • the invention is achieved in the light of the above described circumstances, and an object of the invention is to provide an X-ray microscopic inspection apparatus for solving the above described various challenges, enabling non-destructive inspection with high resolving power equal to or less than 0.1 ⁇ m within a very short period, and capable of largely contributing to the nano-technology field.
  • the invention relates to X-ray microscopic inspection apparatus having X-ray generating means for generating X-rays by allowing an electron beam from an electron source to impinge on a target for X-ray generation, for inspecting an object to be inspected by utilizing the X-rays, and the above described object of the invention is achieved by including a magnetic superposition lens whose magnetic lens-field is superposed on an electron generating portion of en electron gun, as a component element of the X-ray generating means. Further, the object is achieved by including a liquid metal electron source using Taylor cone consisting of the liquid metal, as a component element of the X-ray generating means.
  • the object is achieved by including a thermal field emission electron source as the electron source, as a component element of the X-ray generating means.
  • the object is achieved by including a target with a backing plate using CVD diamond as the heat sink, as a component element of the X-ray generating means.
  • the object is achieved even more effectively by including at least one component element of an electron source using liquid metal or a thermal field emission electron source as the electron source, and a target with a CVD diamond plate as the heat sink of the target, as a component element of the X-ray generating means, other than the magnetic superposition lens disposed in the vicinity of the electron generating portion of the electron gun.
  • thermo field emission cathode or “liquid metal field emission cathode” with higher brightness compared to the thermionic emission cathode used in the conventional X-ray inspection apparatus is used for the electron source for the first time in the X-ray microscopic inspection apparatus.
  • the characteristics of these electron sources are that the brightness is higher than the LaB 6 cathode by two orders of magnitude, and simultaneously, the effective size of the electron source is smaller by three orders of magnitude.
  • special devices are required for the electron optical system that forms an electron probe.
  • the electron probe has been reduced totally by two orders of magnitude by accelerating the electrons Re from the electron source 21b and then focusing them by the electron lenses 22.
  • This probe size reduction accompanies the reduction of the electron beam amount as described above. Therefore, secondly, in the X-ray microscopic inspection apparatus of the invention, operating at a magnifying mode of several times totally while reducing the electron beam loss amount by introducing a magnetic superposition electron lens (hereinafter, referred to as "magnetic superposition lens”) for focusing electrons while accelerating them is adopted.
  • magnetic superposition lens magnetic superposition lens
  • a high intensity X-ray source never before possible is realized by using the electron source (thermal field emission cathode, liquid metal electron source) that has never been used for the X-ray microscope and the magnetic superposition lens that has never been used for the X-ray microscope, either, and an X-ray image with high resolving power of equal to or better than 0.1 ⁇ m can be obtained within a very short period.
  • the electron source thermal field emission cathode, liquid metal electron source
  • a thin plate of diamond formed by CVD is introduced as a heat sink.
  • Diamond is a light element and has good X-ray transparency, and has extremely high thermal conductivity (about three times that of pure copper) despite that it is an insulative material and extremely high melting point.
  • CVD chemical vapor deposition
  • a diamond plate of good thermal conductivity can be obtained by CVD.
  • CVD chemical vapor deposition
  • the surface of diamond plate is kept electrically conductive with a suitably material in use such as thin deposition layer of Be. It is optimum to adopt all of the above described first to third technical matters, however, they can be adopted independently, and any of them can be used for providing an X-ray image with higher resolving power.
  • the conventional X-ray microscopic inspection apparatus is short of the signal amount, there has been only a method of contrast intensification by image processing.
  • the signal amount can be increased largely by adopting the respective technical matters as described above, the light element sample can be inspected with high resolving power using X-rays having long wavelength.
  • the accelerating voltage is lowered to the order of 10 to 20 kV, and Ge (germanium), Cr (chromium), etc.
  • the apparatus can perform significant contrast enhancement to X-ray images of the samples consisting principally of light elements.
  • FIG. 3 shows an example of a construction of a main part of an X-ray microscopic inspection apparatus according to the invention
  • X-ray generating means includes an electron gun 1, an objective lens 2, a target 3, etc. and the electron gun 1 is constituted by a Schottky module 1a, an electron source 1b, an anode 1c, etc.
  • the electron source 1b is used as the electron source 1b.
  • FIGs. 4A and 4B show an example of a liquid metal field emission cathode by diagrams.
  • the liquid metal field emission cathode 1b has a construction in which a filament of tungsten is provided as a thermionic source a1 and a tungsten having a tip end formed at an acute angle as shown in FIG. 4A is attached to the thermionic source a1, as an electron generating portion a2 as shown in FIG. 4B, and the electron generating portion a2 is coated with liquid metal a3.
  • the liquid metal a3 diffuses along the surface and is supplied to the tip end forming very thin tip called Taylor cone as the electron generating portion a2.
  • the effect provided by the liquid metal a3 causes the increase of electron beam brightness about a hundred times.
  • a material having relatively low vapor pressure at a molten state of the metal having low melting point used in a liquid metal ion source is preferable.
  • In (indium) [melting point ⁇ 429 K, vapor pressure at melting point: « 10 -10 Pa]
  • the so-called magnetic superposition lens has been conventionally used in an electron beam apparatus such as a transmission electron microscope and a scanning electron microscope, however, the lens can not be applied to the X-ray microscopic inspection apparatus because the desired X-ray amount can not be obtained because of the small emission current amount.
  • the reason for that is, in the electron microscope, the small emission current amount is not problematic to some extent because it is enough as the signal.
  • the X-ray microscopic inspection apparatus however, different from the electron microscope, the problem that the image is dark and long exposure time is needed with the small amount of the probe current raises. Especially, short exposure time is a required condition for the widespread industrial use.
  • the electron beam apparatus such as an electron microscope has the construction in which a magnetic circuit etc.
  • the problem is solved by adopting a material that is thought to emit small amount of gas, and by placing the magnetic circuit outside the vacuum chamber with water cooling for the circuit.
  • the construction of the magnetic superposition lens that is unique to the X-ray inspection apparatus according to the invention will be described by comparison with the lens used in the electron beam apparatus such as a scanning electron microscope.
  • the FE (field emission) electron gun provides electron beams having high brightness and good coherence, and thereby, demonstrates its high performance in a transmission electron microscope, a scanning electron microscope, a scanning transmission electron microscope, an electron beam exposure apparatus, etc.
  • this performance is obtained by reducing the crossover of the electron source extremely small.
  • the so-called electron beam probe demonstrates its performance only when the probe is made in a size equal to or less than nanometer (sub-nanometer).
  • nanometer sub-nanometer
  • the conventional FE electron gun has a construction in which, as shown in the construction example in FIG. 2, the entire housing of the electron gun chamber is made from a vacuum sealing material 1B such as stainless steel, and a magnetic circuit 1d 1 (magnetic body 1d 11 , excitation coil 1d 12 , etc.) is incorporated in the electron gun tip end 1A disposed within the ultra-high vacuum thereof.
  • a magnetic circuit 1d 1 magnetic body 1d 11 , excitation coil 1d 12 , etc.
  • the axis alignment mechanism of the electron gun and the electron lens is also extremely difficult.
  • the electron gun for X-ray generation having the magnetic superposition lens (hereinafter, referred to as magnetic superposition electron gun) according to the invention has a construction in which a magnetic field generating portion of the magnetic superposition lens constituted by the magnetic circuit 1d 1 , etc. is provided in the position in the vicinity of the electron source of the electron gun (electron gun tip end 1A for electron generation) outside the electron gun chamber under vacuum.
  • FIG. 5 shows a first construction example of the magnetic lens superposition electron gun according to the invention corresponding to the construction of the conventional FE electron gun shown in FIG. 2.
  • 1A denotes the electron gun tip end constituted by an emitter, a suppressor, an extractor, etc.
  • 1d 1 denotes the magnetic circuit
  • 1d 11 denotes the magnetic body constituting the magnetic circuit
  • 1d 12 denotes the excitation coil for the magnetic circuit 1d 1
  • s denotes the distance between two pole pieces. of the electron lens
  • b2 (“b" in FIG. 2) denotes the hole diameter of the pole piece, respectively.
  • the construction in which the electron gun chamber itself is incorporated in the magnetic circuit 1d 1 constituted by the magnetic body 1d 11 , etc. is adopted.
  • the construction includes an electron gun accommodation part having a rectangular section, for example, as shown in FIG. 5, and a housing covering the magnetic body as the electron gun chamber A, as the component element of the magnetic superposition lens 1d, and the electron gun incorporated in the electron gun accommodation part. That is, the construction includes the parts of the housing (the entire or a part of the housing such as an upper plate, a bottom plate, and an outer cylinder) provided as a part or the entire of the magnetic circuit (magnetic field generating portion) and the electron gun and the electron lens 1d separated under vacuum.
  • the object surface crossover of electron source
  • the aberration coefficient especially, the spherical aberration
  • the spherical aberration is made significantly small.
  • the reason for that is, generally, when the distance from the object surface (in this case, crossover of electron source) to the lower pole of the electron lens is fixed, the larger the hole diameter and the distance of the pole pieces, the smaller the spherical aberration becomes.
  • chromatic aberration is not limited to that, the chromatic aberration can be neglected as the subject of the invention.
  • the magnetic circuit is separated from the electron gun chamber that requires ultra-high vacuum in construction, there is an advantage that the vacuum seal, the cooling water, and lead lines can be taken out easily.
  • FIG. 6 shows a second construction example of the magnetic lens superposition electron gun according to the invention corresponding to the first construction example shown in FIG. 5.
  • the construction in which the electron gun chamber A in the convex form is provided at the upper portion of the magnetic superposition lens 1d constituted by the magnetic body 1d 11 etc. formed so as to have a section in a concaved form, for example, and the electron gun tip end 1A is formed so as to be inserted into the magnetic field from upside of the magnetic superposition lens 1d, so that the electron gun tip end 1A and the magnetic body 1d 11 may be more close, is adopted. Since the extremely strong magnetic excitation is needed in the first construction example shown in FIG.
  • the construction is extremely effective to the low accelerated electron beams, however, not necessarily advantageous for the highly accelerated electron beams to some degree. Therefore, the embodiment adopts the construction in which the hole diameter b of the pole pieces (hole diameters b1 and b2 in different sizes between upper and lower holes in this example) and the distance s are made small so that much weaker excitation may be enough, and the electron gun tip end 1A is formed so as to be inserted into its.magnetic field.
  • the magnetic superposition lens has the construction in which the magnetic field generating point is disposed in the position in the vicinity of the electron generating portion of the electron gun outside the electron gun chamber, and thereby, there are advantages that the electron gun and the electron lens are separated under vacuum (easy to realize ultra-high vacuum including baking out) and the electric field formed by the electron gun and the magnetic field formed by the electron lens are superposed with no difficulty.
  • a deflection coil 1e can be easily provided in the vicinity of the electron gun tip end 1A for the electromagnetic axis alignment.
  • the above described magnetic superposition lens 1d and the electron lens (objective lens) 2 as shown in FIG. 3 are needed.
  • the freedom of selecting the desired electron probe size and the probe current becomes extremely increased.
  • the focal length of the objective lens 2 is longer in the X-ray microscopic inspection apparatus of the invention compared to that in the conventional apparatus (see FIG. 1) , the longer working distance (several centimeters) that can be never obtained by the conventional X-ray microscopic inspection apparatus can be realized.
  • the space between the objective lens 2 and the target 3 can be taken broader, peripheral equipment for the inspection can be provided within the space.
  • the X-ray amount applied to the sample (object to be inspected) 10 is greater in order to realize an X-ray microscopic inspection apparatus with high resolving power, so as to make greater electron amount to impinge on the target 3 with high intensity and micro focal point size by a high performance lens.
  • the orientation of the axis and the position of the electron beam for X-ray generation are also important. In the embodiment, as illustrated in FIG. 3 and FIG.
  • the apparatus has the construction in which the electron beam axis alignment coil 1e is disposed in the vicinity of the electron generating portion 1a (close by the electron source) for the first time as the X-ray microscopic inspection apparatus, and by shifting the electron beam before acceleration by the anode 1c in X and Y directions to align the electron beam using the axis alignment coil 1e.
  • the axis alignment of the electron beam for the X-ray source can be performed precisely and extremely easily.
  • a thin diamond plate that has enough transparency to X-ray, has extremely high thermal conductivity despite that it is an insulative material, and has extremely high melting point is used as a heat sink is adopted.
  • Table 1 shows properties of Be (beryllium) and diamond. Since diamond has extremely higher thermal conductivity and melting point compared to Be, which has conventionally used, the problem of melting or evaporation of the target does not occur because of the advantageous effect as the heat sink even if the electron probe having high current density is focused by the magnetic superposition lens 1d.
  • FIGs. 7A and 7B schematically show an example of the target 3 with a diamond heat sink by the side view and plan view.
  • the target has a construction in which, on the diamond plate 3b formed in the form of a thin plate by CVD, the target material 3a is deposited by CVD.
  • CVD chemical vapor deposition
  • the X-ray microscopic inspection apparatus having ultra-high resolving power of 40 nm to 100 nm can be realized, and the apparatus can contribute to non-destructive inspections etc. in various fields such as the inspection of the next generation very large scale integrated circuit, the inspection of the components of the medical micromachine, the inspection of the sample consisted principally of a light element by an X-ray having a long wavelength (0.2 to 3nm).
  • an X-ray microscopic inspection apparatus capable of performing non-destructive inspection of the object can be performed with ultra-high resolving power (40 to 100 nm) better than 0.1 ⁇ m.
  • ultra-high resolving power 40 to 100 nm
  • the apparatus can be operated as a higher magnification system of several times as a whole, while avoiding the electron beam loss.
  • liquid metal or thermal field emission cathode used for the electron source
  • the electron source with higher brightness and greater emission current amount compared to the conventional electron source using the LaB 6 cathode can be obtained, and the X-ray amount applied to the object to be inspected can be largely increased.
  • CVD diamond is used as a heat sink of the target for X-ray generation, the' temperature rise when the energy of the electron beam is converted into heat on the target can be largely reduced, and as a result, the target can endure the thermal load even if the X-ray amount applied to the object to be inspected is largely increased.
  • the miniaturization of the minimum constitutional unit of the semiconductor component is recently being promoted from the micro-scale to nano-scale.
  • the non-destructive inspection of the microstructure inside such components will be a necessary and indispensable technology in the future. Only an X-ray can be used for non-destructive inspection with high resolving power of such inner structure. Therefore, the invention that enables the non-destructive inspection with ultra-high resolving power of 40 nm to 100 nm can largely contribute to the nano-technology fields.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
EP04001490A 2004-01-23 2004-01-23 Tube rayons-X à microfoyer pour appareil d'inspection microscopique Withdrawn EP1557865A1 (fr)

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Cited By (3)

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CN102497716A (zh) * 2011-12-02 2012-06-13 深圳市日联科技有限公司 一种用于连续工作环境下的微焦点x射线源
WO2017034432A1 (fr) 2015-08-21 2017-03-02 Siemens Aktiengesellschaft Système de focalisation de faisceau d'électrons avec un élément de focalisation à base de matériau diélectrique
US10847336B2 (en) 2017-08-17 2020-11-24 Bruker AXS, GmbH Analytical X-ray tube with high thermal performance

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WO2001015192A1 (fr) * 1999-08-20 2001-03-01 Fei Company Emetteur schottky de longue duree
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WO2003065772A2 (fr) * 2002-01-31 2003-08-07 The Johns Hopkins University Source de rayons x et procede pour la production plus efficace de frequences de rayons x au choix

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GB735943A (en) * 1952-10-07 1955-08-31 Vernon Ellis Cosslett Improvements in and relating to fine focus x-ray tubes
GB2131224A (en) * 1982-11-25 1984-06-13 Atomic Energy Authority Uk Intense microfocus X-ray source
EP0473227A2 (fr) * 1990-08-28 1992-03-04 Koninklijke Philips Electronics N.V. Aimant pour utilisation dans un tube à transit d'un tube à rayons X
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CN102497716A (zh) * 2011-12-02 2012-06-13 深圳市日联科技有限公司 一种用于连续工作环境下的微焦点x射线源
CN102497716B (zh) * 2011-12-02 2014-10-08 深圳市日联科技有限公司 一种用于连续工作环境下的微焦点x射线源
WO2017034432A1 (fr) 2015-08-21 2017-03-02 Siemens Aktiengesellschaft Système de focalisation de faisceau d'électrons avec un élément de focalisation à base de matériau diélectrique
US10847336B2 (en) 2017-08-17 2020-11-24 Bruker AXS, GmbH Analytical X-ray tube with high thermal performance

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