EP1532488A1 - Optisches teilsystem insbesondere für eine projektionsbelichtungsanlage mit mindestens einem in mindestens zwei stellungen verbringbaren optischen element - Google Patents
Optisches teilsystem insbesondere für eine projektionsbelichtungsanlage mit mindestens einem in mindestens zwei stellungen verbringbaren optischen elementInfo
- Publication number
- EP1532488A1 EP1532488A1 EP03732444A EP03732444A EP1532488A1 EP 1532488 A1 EP1532488 A1 EP 1532488A1 EP 03732444 A EP03732444 A EP 03732444A EP 03732444 A EP03732444 A EP 03732444A EP 1532488 A1 EP1532488 A1 EP 1532488A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- optical
- optical subsystem
- optical element
- subsystem according
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 171
- 238000001393 microlithography Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 49
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- 238000006073 displacement reaction Methods 0.000 claims description 6
- 238000009304 pastoral farming Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 description 12
- 230000005855 radiation Effects 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000011109 contamination Methods 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000013519 translation Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 4
- 210000001747 pupil Anatomy 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
Definitions
- Optical subsystem in particular for a projection exposure system with at least one optical element which can be moved into at least two positions
- the invention relates to an optical subsystem, in particular for a
- Projection exposure system wherein a bundle of beams passes through the subsystem and the optical subsystem has at least one optical element, which the beams of the bundle of rays strike in a first useful area.
- Projection exposure systems for microlithography in particular for wavelengths ⁇ 193 nm, have become known from a large number of applications.
- catadioptric systems DE-A-100 20 592;
- refractive systems reference is made to DE 198 55 157 and DE-A-199 05 203, the disclosure content of which is fully incorporated in the present application.
- the field of the invention is preferably in the field of projection exposure systems, in particular those that use EUV
- Wavelengths in the range of 11-14 nm, in particular 13.5 nm, with a numerical aperture of 0.2-0.3 are currently being discussed as wavelengths for EUV lithography.
- the image quality in EUV lithography is determined on the one hand by the projection lens and on the other hand by the lighting system.
- the illumination system is intended to provide the most uniform possible illumination of the field plane in which the structure-bearing mask, the so-called reticle, is arranged.
- the projection lens depicts the field plane in an image plane, the so-called wafer plane, in which a light-sensitive object is arranged.
- Projection exposure systems for EUV lithography are designed with reflective optical elements.
- the shape of the field in the image plane of an EUV projection exposure system is typically that of a ring field with a high aspect ratio of 2 mm (width) x 22-26 mm (arc length).
- the projection systems are usually used in scanning
- the problem with projection exposure systems which work with wavelengths ⁇ 193 nm, in particular in the range ⁇ 157 nm, especially in the EUV range with wavelengths ⁇ 30 nm, is that the radiation in the EUV or VUV and DUV range becomes one Contamination and / or destruction of the optical surface of the components, which are also referred to as optical elements.
- first and last optical surfaces of refractive systems are particularly at risk of contamination because they are in close proximity e.g. to a source, a mask or a wafer to be exposed. These can be used to introduce contaminants into the optical system. It is therefore common for these closing surfaces e.g. with pellicles to protect thin foils. However, such films lead to absorption and also introduce aberrations into the optical system.
- contaminations on the optical surface e.g. by crystal formation or layers e.g. from carbon or carbon compounds.
- contamination leads to a reduction in the reflection in the case of reflective components and to a reduction in the transmission in the case of transmissive elements.
- the contamination can depend on the illuminance.
- Lithography can be used for sources that emit a broadband spectrum. Even after spectral filtering e.g. with a grating spectral filter or a zirconium foil there is a broad spectrum of high-energy radiation.
- the load in the first optical components up to the first multilayer mirror in an EUV system is particularly high, since up to there, in addition to the radiation in e.g. 13.5 nm the broadband radiation from the source is present and thus the radiation exposure is maximum.
- the reflection is carried out particularly in the case of the first optical components up to and including the first normal-incidence mirror in an illumination system for a projection exposure system
- a normal-incidence mirror is understood to be a mirror on which the rays of the incident bundle of rays strike at an angle of ⁇ 70 ° relative to the surface normal.
- the lighting system of an EUV projection exposure system is the largest because this mirror receives the greatest power density of the light source, but essentially only reflects selectively due to the multiple coating at 13.5 nm. All other radiation that the EUV source emits is thus converted into absorption power. Carbon or carbon compounds are removed by regularly cleaning the mirrors, for example by adding argon and oxygen under an RF plasma. With regard to the cleaning of contaminated optics, reference is made to the following publication:
- Such cleaning of the mirrors is necessary at short intervals. This greatly reduces machine usage times. For example, it may be necessary to clean the first normal-incidence mirror in an EUV projection exposure system after only about 20 hours of operation. This cleaning takes about 2 hours, for example, which is 10% of the usage time.
- the object of the invention is therefore to provide an optical subsystem of a projection exposure system which is characterized in that the useful times are increased compared to the devices known from the prior art.
- This is achieved according to the invention in that at least one optical element of the optical subsystem has a surface which is at least twice as large as the dimensions of the first useful area on this optical component.
- Element is regularly removed from the beam path in the optical subsystem and cleaned and a cleaned useful area remains in the beam path. In this way it is possible to clean the contaminated optical component regularly without interrupting the machine usage time.
- the first useful area and the further one (s) Usable area (s) of the optical element have an identical optical effect. This is achieved in that the optical element is symmetrical to a point of rotation, symmetrical to an axis of rotation or has a plurality of useful areas with an identical optical effect, which are arranged along a translation axis, which is also referred to as a displacement axis.
- the optical element has a rotation point
- the optical element can be rotated around the rotation point in order to bring the different useful areas into the beam path with an identical optical effect.
- the optical element can also be configured symmetrically to an axis.
- the optical element then comprises an axis of rotation.
- such an optical element can be rotated about the axis of rotation.
- the optical element has a translational invariance.
- the various optically identical regions can be brought into the beam path by shifting along a translation axis, which is also referred to as a shift axis.
- the optical element is a reflective optical element, for example a plane mirror, a spherical mirror, a grating, an optical element with raster elements, the raster elements consisting of the same mirrors, generally a mirror with a rotating or is translation invariant behavior.
- the optical element is a transmissive optical element, for example a filter element or a refractive optical element.
- Refractive optical elements can for example, a flat plate, a lens, an optical element with raster elements, the raster elements being composed, for example, of lenses, a beam splitter or generally a refractive element with a rotation or translation invariant behavior.
- the optical element can be a reflective optical element, for example a mirror with multiple coating, on which the beams of the beam bundle impinge at angles ⁇ ⁇ 70 ° in the useful area. It would also be possible to have a grazing incidence mirror here, onto which the rays of the beam are at an angle ⁇
- the optical subsystem comprises a cleaning chamber.
- the cleaning chamber is atmospheric from the chamber, e.g. the vacuum chamber of the rest of the optical subsystem, e.g. vacuum-separated.
- a certain gas concentration e.g. preferably an oxygen concentration and / or an argon concentration, or a gas stream and other means for cleaning, such as a UV light source, an RF antenna for generating an
- Electrodes for creating fields or mechanical cleaning agents can be introduced.
- the unused mirror surface is cleaned in one or the other way described above in the cleaning chamber.
- the optical element to be cleaned in addition to the formation of a separate vacuum chamber for cleaning purposes, it can also be provided that the optical element to be cleaned, in particular the optical mirror to be cleaned, is itself separated from the vacuum chamber of the rest of the system.
- Vacuum chamber has the advantage that the mirror is constantly cleaned by adding a certain oxygen concentration during operation can be and complete cleaning is only necessary after long periods of inactivity.
- the arrangement in a separate vacuum chamber protects the rest of the system, for example, from possible harmful influences of the cleaning.
- the optical subsystem is preferably an illumination system of a projection exposure system, but it can also be the projection lens itself in which one or more optical components are designed in accordance with the invention, so that they permit simple cleaning without interrupting operation.
- the invention also provides one
- Figure 1 shows a projection exposure system according to the invention, wherein the
- Lighting system is designed as the first optical subsystem according to the invention.
- Figure 2 shows an optical component according to the invention with a first used
- Figure 3 mirror or refractive lens consisting of a concentric
- FIG. 1 shows an EUV projection exposure system with an optical element 1 according to the invention.
- the optical element 1 is a normal incidence mirror, on which the beams 2 of a bundle of beams 4 from the light source 3 to the field plane 22 strike at a first useful area 12 at angles ⁇ ⁇ 70 ° to the surface normal 10.
- the dimensions of the optical element 1, here the normal incidence mirror, are, as can be seen from FIG. 1, substantially larger than the first useful area 12 of the mirror.
- the second useful area 14 of the mirror is moved into a cleaning chamber 16 and, in the present case, is cleaned and not used.
- the process into the cleaning chamber 16 is carried out by pivoting about the axis of rotation 18.
- Other possibilities for bringing it into the cleaning chamber are also conceivable without deviating from the concept of the invention.
- This option includes the lateral movement of flat optical components or rolling e.g. of spherical mirrors or concentric menisci.
- the cleaning chamber 16 is largely separated from the vacuum chamber 20 of the rest of the lighting system in terms of vacuum technology.
- the cleaning chamber comprises an inlet line 15 for
- the cleaning gas is preferably oxygen and / or argon.
- Further and / or alternative means for cleaning such as, for example, a UV light source, an RF antenna for generating a high-frequency plasma or
- Electrodes for applying an electrical voltage are not shown in FIG. 1. If all contaminations have been removed from the mirror surface of the second region 14 of the optical element 1, the mirror can be brought back into a position in which the cleaned one by rotating about the axis of rotation 18
- the EUV projection exposure system further comprises a light source 3, a collecting optical component, a so-called collector 5, which, as a nested collector according to German patent application DE-A-10102934, filed on January 23, 2001 at the German Patent Office for the applicant, the
- the collector 5 forms the light source 3 lying in the object plane of the lighting system via an optional plane mirror 9, which additionally folds the beam path, into a secondary light source 5.1 in or in the vicinity of a diaphragm plane 7.1.
- the light source 3 which can be, for example, a laser plasma source or a plasma discharge source, is arranged in the object plane of the illumination system of the projection exposure system.
- the plane mirror 9 can alternatively e.g. be designed as a grating spectral filter.
- the grating spectral filter together with the physical aperture 7.1, blocks the light of undesired wavelengths, in particular wavelengths greater than 30 nm.
- the focus of the -1st order comes to lie in the plane of the aperture 7.1, i.e. the light source 3 is by collector 5 and grating spectral filter 9 in the
- the optical components of the lighting system are arranged in the third vacuum chamber 21.3 Shaping and illumination of the field in the field level 22 serve with an annular field.
- the individual vacuum chambers 21.1, 21.2, 21.3 are separated with the aid of differential pump sections on the two intermediate images 5.1 and 5.2 of the light source 3.
- Such a separation of the lighting system into three vacuum chambers has the advantage that a separation into a separate vacuum chamber 21.2 for the optical element 1 to be cleaned by adding, for example, a mixture of an oxygen concentration and an argon concentration to the vacuum chamber 21.2, constant cleaning of the area 12 used of the first mirror 1 can be achieved during operation. This way and
- the service life can be significantly extended.
- Such a subdivision of the vacuum chamber of the lighting system is in no way required for the invention.
- the illumination system of the projection system comprises an optical system for shaping and illuminating the field plane 22 with an annular field.
- the optical system comprises two facet mirrors 29.1, 29.2 and two imaging mirrors 30.1, 30.2 and a field-forming grazing-incidence mirror 32.
- the first facet mirror 29.1 the so-called field facet mirror, generates a multiplicity of secondary light sources in or in the vicinity of the plane of the second facet mirror 29.2, the so-called pupil facet mirror.
- the following imaging optics images the pupil facet mirror 29.2 in the exit pupil of the illumination system, which is in the entrance pupil of the
- Projection objective 26 comes to rest.
- the angles of inclination of the individual facets of the first and second facet mirrors 29.1, 29.2 are designed in such a way that the images of the individual field facets of the first facet mirror 29.1 overlap in the field plane 22 of the lighting system and thus a largely homogenized illumination of the structure-bearing ones
- the segment of the ring field is formed over the grazing incidence mirror 32, which operates under grazing incidence.
- a double faceted lighting system is disclosed, for example, in US Patent US-B-6198793, imaging and field-shaping components in US Pat
- the projection lens 26 is a 6-mirror projection lens as disclosed, for example, in US application 60/255214, filed on December 13, 2000 at the US Patent Office for the applicant and DE-A-10037870, the disclosure of which is fully disclosed in the present
- the object to be exposed for example a wafer, is arranged in the image plane 28.
- the exemplary embodiment as an optical component shows a normal incidence mirror in an illumination system as an example
- the invention is in no way limited to this.
- any other optical component in the lighting system or also in the projection lens can be cleaned in the manner according to the invention by choosing the mirrors to be significantly larger than the useful areas and moving the unused areas in cleaning chambers for cleaning.
- the invention can also be applied to purely refractive systems, for example projection exposure systems for 157 nm.
- FIGS. 2 to 6 show examples which can also be used for refractive optical components according to the invention.
- FIG. 2 shows an exemplary embodiment of a lens 100, which is part of a refractive optical subsystem according to the invention, in section.
- the lens 100 is divided into a first lens half 102 and a second lens half 103.
- the first lens half 102 is significantly larger than the second lens half 103.
- the first lens half 102 is designed to be rotatable about an axis of rotation 106.
- the first useful area 108.1 of the first lens half 102 can be moved from the cleaning position to the used position and the second useful area 108.2 from the used position to the cleaning position and vice versa.
- the rays of the bundle of rays 104 which pass through the optical subsystem, strike the refractive optical element, here the lens.
- the division of the lens into the first and second lens halves takes place in a wedge shape along the dividing line 110. Due to the wedge-shaped separation, the axis of rotation 106 of the wedge-shaped first lens half 102 does not match the optical axis HA of the lens 100, which is composed of the first and second lens halves, via the wedge angle ⁇ 102, 103 composed.
- the axis of rotation 106 advantageously penetrates the first lens half outside the area of the first lens half used.
- the useful area of the first lens half 102 to be cleaned is located in a cleaning device, not shown, which can be designed, for example, as a cleaning chamber.
- a cleaning device In the cleaning device, the contamination resulting from the loading of the lens in this useful area, e.g. Crystal formation cleaned by supplying reactive gases and / or radiation or by other means such as mechanical cleaning. If necessary, a new coating can also be applied or a desired coating can be reactivated or repaired.
- the first lens half 102 is held in a rotatable first frame 112.
- the rotatable first frame 112 is guided in a guide 114.
- Lens half 104 is held in a rigid second frame 116.
- Those skilled in the art can transfer the teachings given for refractive systems to reflective systems without inventive step and vice versa the teachings for reflective systems to refractive systems. Although not explicitly described for each individual case, these teachings are included in the scope of protection of the application.
- FIG. 3 shows, as a further exemplary embodiment of the invention, the special case of an optical component which has a center of rotation.
- a concentric meniscus Such a component is given, for example, by a concentric meniscus.
- the concentric meniscus 150 comprises two useful areas, a first useful area 154 and a second useful area 156.
- the optical axis of the area used in each case, that is the area that is brought into the beam path, here the first useful area 156, is designated by HA.
- the concentric meniscus is constructed symmetrically to a common center of curvature, the so-called rotation point 160.
- the respective useful area can be brought into the beam path by rotating around this rotation point 160 and / or brought out of the beam path into the cleaning chamber.
- FIG. 4 shows the special case of a transmissive flat plate 200, which is in a
- the plane plate 200 comprises two useful areas, a first useful area 208.1 and a second useful area 208.2.
- the first useful area 208.1 is in the cleaning device and the second useful area 208.2 is in the beam path of the beams of the beam bundle 204, i.e. in the used area of the faceplate.
- the axis of rotation 206 of the plane plate is offset parallel to the optical axis HA.
- the faceplate is held in a rotatable socket that runs in a guide 210.
- FIGS. 5 and 6 show, using the example of a transmissive plano-convex lens 300 with a first useful area 308.1 and a second useful area 308.2, another possibility of moving the respective useful area into one Cleaning device.
- This arrangement of several optically identical effective areas is a particularly advantageous embodiment of the invention if the optical surfaces do not themselves have a geometric shape that is invariant with respect to rotation or translation.
- 306 Regardless of whether the optical surface of the optical element itself has a rotationally or translationally invariant geometric shape, 306 enables translational invariance for the optical element. According to FIGS. 5 and 6, the movement is therefore not necessarily achieved by rotation about an axis of rotation, but also, for example, by one
- the first useful area 308.1 of the plano-convex lens 300 has been brought into the optically used area, i.e. the area where the rays of the bundle of rays hit.
- the first useful area 308.1 is centered on the optical axis HA.
- the second useful area 308.2 is in a first position in the cleaning position
- the plano-convex lens 300 is displaced along the displacement axis 306. This is shown in Figure 6.
- the displacement axis 306 is perpendicular to the optical axis HA.
- the second useful area 308.2 of the plano-convex lens is in the used area, i.e. in the area in which the rays of a bundle of rays strike the optical element.
- the invention provides for the first time an optical subsystem for a projection exposure system with which it is possible to clean optical elements without decommissioning the system.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10240002 | 2002-08-27 | ||
DE10240002A DE10240002A1 (de) | 2002-08-27 | 2002-08-27 | Optisches Teilsystem insbesondere für eine Projektionsbelichtungsanlage mit mindestens einem in mindestens zwei Stellungen verbringbaren optischen Element |
PCT/EP2003/005387 WO2004021085A1 (de) | 2002-08-27 | 2003-05-23 | Optisches teilsystem insbesondere für eine projektionsbelichtungsanlage mit mindestens einem in mindestens zwei stellungen verbringbaren optischen element |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1532488A1 true EP1532488A1 (de) | 2005-05-25 |
Family
ID=31502140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03732444A Withdrawn EP1532488A1 (de) | 2002-08-27 | 2003-05-23 | Optisches teilsystem insbesondere für eine projektionsbelichtungsanlage mit mindestens einem in mindestens zwei stellungen verbringbaren optischen element |
Country Status (6)
Country | Link |
---|---|
US (2) | US7362414B2 (de) |
EP (1) | EP1532488A1 (de) |
JP (1) | JP2005536899A (de) |
AU (1) | AU2003238379A1 (de) |
DE (1) | DE10240002A1 (de) |
WO (1) | WO2004021085A1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7405804B2 (en) * | 2004-10-06 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus with enhanced spectral purity, device manufacturing method and device manufactured thereby |
JP4617143B2 (ja) * | 2004-11-24 | 2011-01-19 | Okiセミコンダクタ株式会社 | 露光装置及び自己洗浄方法 |
JP4539335B2 (ja) * | 2005-01-12 | 2010-09-08 | 株式会社ニコン | 多層膜反射鏡、euv露光装置、及び多層膜反射鏡におけるコンタミネーションの除去方法 |
US20060181689A1 (en) * | 2005-02-14 | 2006-08-17 | Nikon Corporation | Lithographic-optical systems including isolatable vacuum chambers, and lithography apparatus comprising same |
US7141806B1 (en) * | 2005-06-27 | 2006-11-28 | Cymer, Inc. | EUV light source collector erosion mitigation |
DE102005031792A1 (de) * | 2005-07-07 | 2007-01-11 | Carl Zeiss Smt Ag | Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür |
DE102006010337B4 (de) * | 2006-03-07 | 2010-06-02 | Carl Zeiss Smt Ag | Off-axis-Objektive mit drehbarem optischen Element |
DE102006022352B4 (de) * | 2006-05-12 | 2014-11-20 | Qimonda Ag | Anordnung zur Projektion eines Musters von einer EUV-Maske auf ein Substrat |
US7671347B2 (en) * | 2006-10-10 | 2010-03-02 | Asml Netherlands B.V. | Cleaning method, apparatus and cleaning system |
DE102006050835A1 (de) | 2006-10-27 | 2008-05-08 | Carl Zeiss Smt Ag | Verfahren und Vorrichtung zum Austausch von Objetkivteilen |
WO2008107166A1 (de) | 2007-03-07 | 2008-09-12 | Carl Zeiss Smt Ag | Verfahren zum reinigen einer euv-lithographievorrichtung, verfahren zur messung der restgasatmosphäre bzw. der kontamination sowie euv-lithographievorrichtung |
US20090141257A1 (en) * | 2007-11-27 | 2009-06-04 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and method for producing device |
DE102008000967B4 (de) * | 2008-04-03 | 2015-04-09 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
DE102008028868A1 (de) * | 2008-06-19 | 2009-12-24 | Carl Zeiss Smt Ag | Optische Baugruppe |
US8633459B2 (en) * | 2011-03-02 | 2014-01-21 | Cymer, Llc | Systems and methods for optics cleaning in an EUV light source |
DE102012201235B4 (de) * | 2012-01-30 | 2013-08-29 | Carl Zeiss Smt Gmbh | Verfahren zum Einstellen einer Beleuchtungsgeometrie für eine Be-leuchtungsoptik für die EUV-Projektionslithographie |
US20130270461A1 (en) * | 2012-04-13 | 2013-10-17 | Kla-Tencor Corporation | Smart memory alloys for an extreme ultra-violet (euv) reticle inspection tool |
US9810991B2 (en) * | 2013-12-23 | 2017-11-07 | Kla-Tencor Corporation | System and method for cleaning EUV optical elements |
US9541840B2 (en) | 2014-12-18 | 2017-01-10 | Asml Netherlands B.V. | Faceted EUV optical element |
DE102015201138A1 (de) * | 2015-01-23 | 2016-01-28 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Projektionslithografie |
DE102015207140A1 (de) | 2015-04-20 | 2016-10-20 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
JP6083772B1 (ja) * | 2016-02-12 | 2017-02-22 | レーザーテック株式会社 | マスク検査装置及びマスク検査方法 |
US10156664B2 (en) | 2016-02-12 | 2018-12-18 | Lasertec Corporation | Mask inspection apparatus and mask inspection method |
US10585215B2 (en) | 2017-06-29 | 2020-03-10 | Cymer, Llc | Reducing optical damage on an optical element |
US10627727B2 (en) | 2018-06-13 | 2020-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lens control for lithography tools |
US10775700B2 (en) * | 2018-08-14 | 2020-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography system and method for exposing wafer |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4665315A (en) * | 1985-04-01 | 1987-05-12 | Control Data Corporation | Method and apparatus for in-situ plasma cleaning of electron beam optical systems |
US5696623A (en) * | 1993-08-05 | 1997-12-09 | Fujitsu Limited | UV exposure with elongated service lifetime |
US6268904B1 (en) * | 1997-04-23 | 2001-07-31 | Nikon Corporation | Optical exposure apparatus and photo-cleaning method |
KR100564436B1 (ko) * | 1997-07-22 | 2006-03-29 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치 및 광 세정 방법 |
WO1999027568A1 (fr) * | 1997-11-21 | 1999-06-03 | Nikon Corporation | Graveur de motifs a projection et procede de sensibilisation a projection |
JPH11224839A (ja) * | 1998-02-04 | 1999-08-17 | Canon Inc | 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法 |
DE10138313A1 (de) | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
EP0955641B1 (de) | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
DE19855157A1 (de) | 1998-11-30 | 2000-05-31 | Zeiss Carl Fa | Projektionsobjektiv |
DE19905203A1 (de) | 1999-02-09 | 2000-08-10 | Zeiss Carl Fa | Reduktions-Projektionsobjektiv der Mikrolithographie |
JP2000349009A (ja) * | 1999-06-04 | 2000-12-15 | Nikon Corp | 露光方法及び装置 |
WO2001009684A1 (de) | 1999-07-30 | 2001-02-08 | Carl Zeiss | Steuerung der beleuchtungsverteilung in der austrittspupille eines euv-beleuchtungssystems |
DE10020592A1 (de) | 1999-11-12 | 2001-05-17 | Zeiss Carl | Katadioptrisches Objektiv mit physikalischem Strahlteiler |
DE10037870A1 (de) | 2000-08-01 | 2002-02-14 | Zeiss Carl | 6-Spiegel-Mikrolithographie-Projektionsobjektiv |
US6867913B2 (en) | 2000-02-14 | 2005-03-15 | Carl Zeiss Smt Ag | 6-mirror microlithography projection objective |
US6571057B2 (en) * | 2000-03-27 | 2003-05-27 | Nikon Corporation | Optical instrument, gas replacement method and cleaning method of optical instrument, exposure apparatus, exposure method and manufacturing method for devices |
DE60118669T2 (de) * | 2000-08-25 | 2007-01-11 | Asml Netherlands B.V. | Lithographischer Projektionsapparat |
US20040169832A1 (en) * | 2001-08-24 | 2004-09-02 | Nikon Corporation | Vacuum chamber having instrument-mounting bulkhead exhibiting reduced deformation in response to pressure differential, and energy-beam systems comprising same |
JP2003303751A (ja) | 2002-04-05 | 2003-10-24 | Canon Inc | 投影光学系、該投影光学系を有する露光装置及び方法 |
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2002
- 2002-08-27 DE DE10240002A patent/DE10240002A1/de not_active Withdrawn
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2003
- 2003-05-23 WO PCT/EP2003/005387 patent/WO2004021085A1/de active Application Filing
- 2003-05-23 JP JP2004531771A patent/JP2005536899A/ja active Pending
- 2003-05-23 AU AU2003238379A patent/AU2003238379A1/en not_active Abandoned
- 2003-05-23 EP EP03732444A patent/EP1532488A1/de not_active Withdrawn
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2005
- 2005-02-24 US US11/065,327 patent/US7362414B2/en not_active Expired - Fee Related
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2007
- 2007-04-27 US US11/796,475 patent/US20070283591A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
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See references of WO2004021085A1 * |
Also Published As
Publication number | Publication date |
---|---|
US20060001854A1 (en) | 2006-01-05 |
JP2005536899A (ja) | 2005-12-02 |
AU2003238379A1 (en) | 2004-03-19 |
US20070283591A1 (en) | 2007-12-13 |
DE10240002A1 (de) | 2004-03-11 |
US7362414B2 (en) | 2008-04-22 |
WO2004021085A1 (de) | 2004-03-11 |
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