EP1522094A1 - Verfahren zur metallstrukturierung mittels kohlenstoff-maske - Google Patents
Verfahren zur metallstrukturierung mittels kohlenstoff-maskeInfo
- Publication number
- EP1522094A1 EP1522094A1 EP03763579A EP03763579A EP1522094A1 EP 1522094 A1 EP1522094 A1 EP 1522094A1 EP 03763579 A EP03763579 A EP 03763579A EP 03763579 A EP03763579 A EP 03763579A EP 1522094 A1 EP1522094 A1 EP 1522094A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- metal
- etching
- carbon
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002184 metal Substances 0.000 title claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 37
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 43
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 150000001721 carbon Chemical class 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 69
- 229910016570 AlCu Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000002194 amorphous carbon material Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Definitions
- the invention relates to a method for metal structuring, in which at least one corrosion-intensive metal layer is deposited on a Si substrate by means of a deposition method, on which an etching mask is subsequently produced by means of a photolithographic structuring method using a resist and then by the etching mask by means of etching, preferably by plasma etching, the metal layer is structured.
- Resist masks of this type define the structures for the etching process, for example the spatial limitation of metal structures.
- a resist layer is first applied to the substrate and the resist mask is then structured using conventional photolithographic structuring methods (for example DUV, i-line, ).
- a w / resist mask is used which is suitable for aser direct writing systems or for electron beam lithography.
- the resist masks described can then in turn be used to structure the functional layer located under the resist mask.
- Functional layers of this type which have been applied to a substrate in preparatory process steps, can be doped or undoped PolySi layers, Sio2 layers, metal layers and other required functional layers.
- an erosion of the etching mask cannot be prevented due to a lack of sufficient selectivity.
- a metal etching e.g. Executed in an Al or AlCu layer
- sufficient passivation of the already etched structures must be ensured at the same time during the etching process.
- a side wall passivation can be achieved in the already etched metal structures due to the by-products, in particular carbon compounds, which arise during the etching process.
- This passivation is based on the resist as a carbon source and is supported by additives in the etching gas atmosphere, such as N2, CHF3, CH4.
- the passivation is necessary in order to protect the already etched Al structures from further undesired corrosion by the etching media during the etching process, which proceeds further into the depth of the metal layer.
- the maximum height of the metal layer, which has to be completely etched through, is strictly limited by the thickness of the resist mask.
- this resist mask is also etched or eroded during the etching process, so that the depth of the metal etching is mainly determined by the thickness of the resist mask.
- the thickness of the resist mask is limited by other facts, such as the process window for the lithography and the stability.
- Such hard masks exist for for example made of SiO, SiON, W, TiN, or combinations of these materials.
- the hard masks have a significantly higher selectivity compared to the usual resist masks, as a result of which, compared to resist masks, significantly deeper etching trenches can be achieved in metal layers depending on further etching parameters.
- the necessary side wall passivation can be better realized with resist masks, since these supply the required carbon during the etching process. It has also been shown that carbon-rich processes, e.g. due to the passivating effect, are particularly advantageous with regard to the defect density.
- hard masks cannot supply the carbon required for the side wall passivation.
- this became particularly critical in connection with sputtered Al layers in that an increase in corrosion damage occurred.
- the carbon required for the sidewall passivation in Al etching cannot be extracted by gases, e.g. CH4, feed, at least oppose the technological barriers.
- a method for etching structures has become known from US Pat. No. 5,981,398-A, in which a hard mask is first produced by means of a photoresist and the known photolithographic methods, which are then used for structuring a blanket target layer is used.
- the hard mask In order to be able to carry out the etching process with a plasma containing chlorine, the hard mask consists of materials which consist of the group of SOG materials (silesquioxane spin-on-glass) and amorphous carbon materials.
- This hard mask layer is first on the layer to be structured, which can be a metal layer, by chemical vapor deposition (CVD), physical vapor deposition (PVD) or also HDP-CVD (high density plasma chemical vapor deposition) deposited and then a resist layer on this.
- An ARC layer (anti-reflection layer) or a buffer layer will also be arranged between the metal layer and the hard mask layer.
- the ARC layer can be a dielectric Sio2 layer.
- the photoresist is subsequently structured into a first mask using one of the known photolithographic methods.
- the hard mask can then be structured with a fluorine-containing first plasma, so that a second etching mask is formed.
- the subsequent structuring of the metal layer is then carried out with a chlorine-containing plasma with high selectivity to the hard mask, so that even thicker metal layers (target layer) can be etched with the comparatively complex process.
- the thickness of the hard mask can be significantly less than the thickness of the target layer.
- the disadvantage here is that several etching steps with different etching parameters have to be carried out.
- the amorphous carbon-containing hard mask layer which has been deposited by the HDP-CVD process, serves simultaneously as a carbon source and for the realization of an oxygen-containing etching plasma.
- the invention is based on the object of creating a simplified method for metal structuring, in particular for structuring AL-containing metal layers, with which sufficient passivation of the etched metal structures is ensured by simple means during the etching process.
- the object on which the invention is based is achieved in a method of the type mentioned at the outset in that a hard layer in the form of a carbon layer and on which the resist is deposited, that after the structuring of the resist layer, the carbon layer is structured by stripping to form a carbon mask, that the metal etching is then carried out with simultaneous sidewall passivation with the carbon mask defining the structures, and that the masks are then stripped.
- SiCH silicon carbide
- SiOC silicon oxycarbide
- a w / cap layer can also be deposited between the carbon layer and the resist.
- the hard mask according to the invention now fulfills several functions by first defining the structures to be etched and at the same time providing a rich carbon source for the sidewall passivation of the etched metal structures. A suitable protection by the side wall passivation is compared to the otherwise commonly used hard masks, such as SiO, SiON ... achieved so that the well-known AL corrosion problems are avoided.
- a significant simplification of the metal structuring is also achieved in that the additional etching stop layer, e.g. a dielectric ARC layer can be omitted if the hard mask is made of SiCH, since this layer is sufficiently oxygen-resistant.
- the additional etching stop layer e.g. a dielectric ARC layer can be omitted if the hard mask is made of SiCH, since this layer is sufficiently oxygen-resistant.
- a stack built up on a Si substrate consisting of a carbon hard mask and a w / cap layer located thereon and one on top this resist located;
- AlCu metal layer 2 has been deposited on the Si substrate 1 by means of a conventional CVD method.
- This metal layer 2 consists of a stack of a thin layer Ti (around 50 nm), an AlCu layer around 1000 nm, on which there is a thin TiN layer (around 40 nm).
- the metal layer 2 can also consist of a stack of a very thin layer Ti (around 10 nm), a thicker layer AlCu (around 400 nm), another very thin Ti layer (around 5 nm) and a TiN layer (around 40 nm) exist.
- a carbon layer 3 with a thickness of around 200 to 500 nm, on which in turn a w / cap layer 4 (SiON) and a resist 5 above.
- the w / cap layer 4 serves as a stop layer in lithography.
- FIG. 2 shows the layer structure according to FIG. 1 after the resist 4 has been structured photolithographically, for example by means of DUV, i-line, .. Then the w / cap layer 4 and the underlying carbon layer 3 can be etched in-situ, ie simultaneously. The result is the hard mask shown in FIG. 3, which is used directly for structuring the metal layer 2 by metal etching.
- the etching trench 6 extends into the substrate 1. On the passivated side walls of the metal layer 2.
- etching residues 7 present in the etching trenches can e.g. can be removed by wet chemistry (FIGS. 4, 5).
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10231533 | 2002-07-11 | ||
DE2002131533 DE10231533A1 (de) | 2002-07-11 | 2002-07-11 | Verfahren zur Metallstrukturierung |
PCT/DE2003/002125 WO2004008520A1 (de) | 2002-07-11 | 2003-06-26 | Verfahren zur metallstrukturierung mittels kohlenstoff-maske |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1522094A1 true EP1522094A1 (de) | 2005-04-13 |
Family
ID=29796306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03763579A Withdrawn EP1522094A1 (de) | 2002-07-11 | 2003-06-26 | Verfahren zur metallstrukturierung mittels kohlenstoff-maske |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1522094A1 (de) |
DE (1) | DE10231533A1 (de) |
TW (1) | TWI223357B (de) |
WO (1) | WO2004008520A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
US8708227B1 (en) | 2006-10-31 | 2014-04-29 | United Services Automobile Association (Usaa) | Systems and methods for remote deposit of checks |
CN104425222B (zh) * | 2013-08-28 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | 图形化方法 |
CN113851577B (zh) * | 2021-09-23 | 2024-02-20 | 业成光电(深圳)有限公司 | 压电传感器的制作方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590224A (ja) * | 1991-01-22 | 1993-04-09 | Toshiba Corp | 半導体装置の製造方法 |
JP3371143B2 (ja) * | 1991-06-03 | 2003-01-27 | ソニー株式会社 | ドライエッチング方法 |
US5656128A (en) * | 1993-03-26 | 1997-08-12 | Fujitsu Limited | Reduction of reflection by amorphous carbon |
KR100255663B1 (ko) * | 1997-12-11 | 2000-05-01 | 윤종용 | 알루미늄막의 식각방법 및 반도체장치의 배선층 형성방법 |
US5981398A (en) * | 1998-04-10 | 1999-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hard mask method for forming chlorine containing plasma etched layer |
US6465366B1 (en) * | 2000-09-12 | 2002-10-15 | Applied Materials, Inc. | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers |
DE10153310A1 (de) * | 2001-10-29 | 2003-05-22 | Infineon Technologies Ag | Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte |
-
2002
- 2002-07-11 DE DE2002131533 patent/DE10231533A1/de not_active Ceased
-
2003
- 2003-06-26 WO PCT/DE2003/002125 patent/WO2004008520A1/de not_active Application Discontinuation
- 2003-06-26 EP EP03763579A patent/EP1522094A1/de not_active Withdrawn
- 2003-07-10 TW TW92118930A patent/TWI223357B/zh not_active IP Right Cessation
Non-Patent Citations (1)
Title |
---|
See references of WO2004008520A1 * |
Also Published As
Publication number | Publication date |
---|---|
TWI223357B (en) | 2004-11-01 |
DE10231533A1 (de) | 2004-01-29 |
WO2004008520A1 (de) | 2004-01-22 |
TW200402804A (en) | 2004-02-16 |
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Legal Events
Date | Code | Title | Description |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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17P | Request for examination filed |
Effective date: 20050203 |
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RBV | Designated contracting states (corrected) |
Designated state(s): DE |
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RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BACHMANN, JENS Inventor name: BRENCHER, LOTHAR Inventor name: SPERLICH, HANS-PETER |
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RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BACHMANN, JENS Inventor name: SPERLICH, HANS-PETER Inventor name: BRENCHER, LOTHAR |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
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18W | Application withdrawn |
Effective date: 20080417 |