EP1522082A2 - Verfahren zur herstellung von superkondensatoren - Google Patents

Verfahren zur herstellung von superkondensatoren

Info

Publication number
EP1522082A2
EP1522082A2 EP03729779A EP03729779A EP1522082A2 EP 1522082 A2 EP1522082 A2 EP 1522082A2 EP 03729779 A EP03729779 A EP 03729779A EP 03729779 A EP03729779 A EP 03729779A EP 1522082 A2 EP1522082 A2 EP 1522082A2
Authority
EP
European Patent Office
Prior art keywords
layers
quantum
capacitors
range
electrical energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03729779A
Other languages
German (de)
English (en)
French (fr)
Inventor
Rolf Eisenring
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eisenring Rolf
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP1522082A2 publication Critical patent/EP1522082A2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H01G4/206—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 inorganic and synthetic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/54—Electrolytes
    • H01G11/56—Solid electrolytes, e.g. gels; Additives therein
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/46—Metal oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/36—Accumulators not provided for in groups H01M10/05-H01M10/34
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49108—Electric battery cell making

Definitions

  • the energy storage devices are independent of stationary sources and are therefore used to power electrical drives in mobile traffic (road, rail, ship and aerospace), primarily as an energy substitute for fossil fuels.
  • the highly concentrated loss-free storage capacity of the materials also allows use in domestic technology for the temporary storage and transport of e.g. energies obtained through solar technology.
  • the materials also enable the construction of new types of electronic components.
  • the lossless, rapid discharge of the electrically stored energy also allows it to be used as an explosive device.
  • the new storage facility allows electrical energy to be stored in the same weight-specific range as chemical energy. Values in the range from 1 to over 15 MJ / kg can be achieved.
  • the materials of the new storage allow unlimited charging and discharging cycles; the materials do not wear out.
  • the new storage works loss-free when loading and unloading.
  • the memory is robust against shocks, extreme accelerations and extreme temperatures, as is the positioning of the room.
  • the invention makes use of a physical effect which consists in the fact that very small amounts of dipolar crystals, for example Ti02 (high electronegativity) in an insulating medium / matrix, for example Si02 or polymer resins, due to a strong electrostatic field and at a critical voltage (charging conditions) become electrically conductive (semiconductors) through virtual photon resonance (a new kind of quantum physical effect) and thereby absorb energy, which is stored analogously to a plate capacitor by counteracting polarization.
  • the memories can be designed with voltages from a few volts to a few thousand volts. The storage capacity is only limited by the design. 15.3.
  • the storage crystals such as Ti02, SrTi03 or the like, are applied to a support surface in the size of a few nm either as a grain or as a layer together with the insulating medium.
  • rutile There are special requirements for the expansion of the crystals, above all the "rutile" type is necessary.
  • Two methods are used: a) A mixture of crystals and polymer resin is first dispersed and then by electrostatic spray technology onto a composite film consisting of a sandwich made of metal and polymer film, which is either flat or stretched on a tube-like body and is continuously moved, sprayed in. The metal film isolated in the composite forms the counterelectrode.
  • the insulation of the polymer prevents the charges from flowing off after impact together with the counterelectrode an electric field, which exerts strong surface forces due to the capacitive effect. These surface forces produce geometrically precise shapes, in the case of the tube exactly round layers and exact layer thicknesses Ensure no-shift layers.
  • the electrostatic field also causes the geometrical alignment of the dipoles.
  • the resin is cured by radiation curing in a protective atmosphere or by thermal curing.
  • the coated film is then cut open and shaped into a layer capacitor.
  • the layers can either be laid flat on top of each other or rolled up. Alternately, the metallic parts of the foils are connected and thereby form the positive and negative poles of the memory.
  • the storage bodies are covered with insulating materials and the electrodes are guided to external terminals.
  • a film capacitor made planar with foils, if made extremely long and with few layers, can be used as a highly flexible flat conductor with an almost infinite bandwidth for the connection between source and battery.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Semiconductor Memories (AREA)
EP03729779A 2002-07-01 2003-06-26 Verfahren zur herstellung von superkondensatoren Withdrawn EP1522082A2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH113002 2002-07-01
CH11302002 2002-07-01
PCT/CH2003/000423 WO2004004026A2 (de) 2002-07-01 2003-06-26 Verfahren zur herstellung von superkondensatoren

Publications (1)

Publication Number Publication Date
EP1522082A2 true EP1522082A2 (de) 2005-04-13

Family

ID=29783982

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03729779A Withdrawn EP1522082A2 (de) 2002-07-01 2003-06-26 Verfahren zur herstellung von superkondensatoren

Country Status (8)

Country Link
US (2) US20060164788A1 (ru)
EP (1) EP1522082A2 (ru)
JP (2) JP4986398B2 (ru)
CN (1) CN1679123B (ru)
AU (1) AU2003240363A1 (ru)
CA (1) CA2491552A1 (ru)
RU (1) RU2357313C2 (ru)
WO (1) WO2004004026A2 (ru)

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CN106463617B (zh) * 2014-03-18 2019-08-16 日本麦可罗尼克斯股份有限公司 电池
JP2017532787A (ja) * 2014-10-13 2017-11-02 ライプニッツ−インスティトゥート フュア フェストケルパー− ウント ヴェルクシュトフフォルシュング ドレスデン エー ファオＬｅｉｂｎｉｚ−Ｉｎｓｔｉｔｕｔ ｆｕｅｒ Ｆｅｓｔｋｏｅｒｐｅｒ− ｕｎｄ Ｗｅｒｋｓｔｏｆｆｆｏｒｓｃｈｕｎｇ Ｄｒｅｓｄｅｎ ｅ．Ｖ． コンパクトなマイクロキャパシタ又はナノキャパシタの製造方法、及びコンパクトなマイクロキャパシタ又はナノキャパシタ
JP6813982B2 (ja) * 2016-08-01 2021-01-13 株式会社日本マイクロニクス 二次電池
JP6961370B2 (ja) * 2017-03-15 2021-11-05 株式会社日本マイクロニクス 蓄電デバイス
CN210041358U (zh) * 2018-03-02 2020-02-07 意法半导体有限公司 电池充电系统和移动设备
CN112638179A (zh) 2018-08-31 2021-04-09 伊诺弗斯公司 植物提取物皮肤护理
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Also Published As

Publication number Publication date
CA2491552A1 (en) 2004-01-08
CN1679123B (zh) 2010-04-28
US20060164788A1 (en) 2006-07-27
WO2004004026A2 (de) 2004-01-08
RU2357313C2 (ru) 2009-05-27
US20080016681A1 (en) 2008-01-24
JP2010093306A (ja) 2010-04-22
JP2005531922A (ja) 2005-10-20
RU2005102398A (ru) 2005-08-20
CN1679123A (zh) 2005-10-05
US7895721B2 (en) 2011-03-01
WO2004004026A3 (de) 2004-03-25
AU2003240363A1 (en) 2004-01-19
JP4986398B2 (ja) 2012-07-25
AU2003240363A8 (en) 2004-01-19

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