JP2020501332A - スーパーキャパシタを備えるデバイス及びそのデバイスの製造方法 - Google Patents
スーパーキャパシタを備えるデバイス及びそのデバイスの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000003792 electrolyte Substances 0.000 claims abstract description 73
- 239000007787 solid Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 33
- 150000002500 ions Chemical class 0.000 claims description 31
- 229910001410 inorganic ion Inorganic materials 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 230000003213 activating effect Effects 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 43
- 239000002001 electrolyte material Substances 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 230000010287 polarization Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
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- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
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- 239000000853 adhesive Substances 0.000 description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 241000894007 species Species 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 239000000843 powder Substances 0.000 description 2
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- 239000011593 sulfur Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
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- 150000008064 anhydrides Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
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- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/54—Electrolytes
- H01G11/56—Solid electrolytes, e.g. gels; Additives therein
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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- H—ELECTRICITY
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- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
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- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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Abstract
Description
‐ 或る物質D製であって、第一端部と、第一端部の反対側の第二端部とを有する電解質D;
‐ 電解質Dの第一端部と接触している第一電極E1;及び
‐ 電解質Dの第二端部と接触している第二電極E2。
‐ 第一端部と、第一端部の反対側の第二端部とを有する電解質;
‐ 電解質の第一端部と接触している第一電極;及び
‐ 電解質の第二端部と接触している第二電極。
‐ Aは水素及び/又はアルカリ金属(ルビジウム(Rb)及び/又はカリウム(K)等)を含み;
‐ Bはチタン(Ti)を含み、又はチタンと他の原子種(例えばニオブ(Nb))との混合物を備える(例えば、95%のTiと5%のNbとの混合物)。
‐ 電解質の中に電荷を固定する状態に対応して、固体イオン伝導物質の一つ以上の方向に印加される第一力;及び、
‐ 電解質から電荷を解放する状態に対応して、固体イオン伝導物質の一つ以上の方向に印加される第二力。第一力から第二力を引いた差が原子面の応力に対応する。
‐ バッテリの充電段階(例えば、電気車両又はハイブリッド車両の制動段階)とバッテリの放電段階(バッテリに蓄えられた電気エネルギーの回収)中における非固定状態;及び、
‐ バッテリの不使用段階中の固定状態(例えば、車両がオフ、イグニションスイッチがオフ)。
‐ 固体イオン伝導物質の温度を第一温度にして、電解質の中に電荷を固定する状態に固体イオン伝導物質を維持すること;又は、
‐ 固体イオン伝導物質の温度を第二温度にして、電解質から電荷を放出する状態に固体イオン伝導物質を維持すること。ここで、第一温度は第二温度よりも高い。
‐ 少なくとも二つの値から選択された信号値が電解質に与えられる書き込みモード;及び、
‐ 電解質の電気抵抗を測定して、書き込みモードで事前に印加されていた信号値を決定する読み出しモード。
‐ 低酸素雰囲気中で数時間にわたって物質をアニーリングすること;
‐ 室温で数時間にわたってその物質に強電場(典型的に略10kV/m以上)を印加すること;
‐ 特定の量の水で物質を水和させること。
‐ 電圧を遮断した直後(「通常」の使用条件下)、又は、
‐ イオンが物質内に固定されて、緩和を防止するという「特別」な条件下での電圧遮断に続く期間後。
‐ 固体電子絶縁イオン伝導物質Dを備える電解質(例えば、図2に示されるタイプの単結晶の形態で、図9に破線で示されるような酸素の水平原子面を有するもの);
‐ 書き込みモードにおいて各スーパーキャパシタに帯電又は「非帯電」信号V1、V2を送信するための物質Dの両側の二つの電極E1及びE2;
‐ 電解質に可変機械力を印加するように配置され、メモリの書き込みモード又は読み出しモードを誘導するように電気信号S1、S2によって制御される圧電部PZ。
Claims (18)
- 少なくとも一つのスーパーキャパシタを備えるデバイスであって、前記スーパーキャパシタが、
第一端部と、前記第一端部の反対側の第二端部とを有する電解質と、
前記電解質の第一端部に接触している第一電極(E1)と、
前記電解質の第二端部に接触している第二電極(E2)と、を備え、
前記電解質が、電子伝導性よりも高いイオン伝導性を有する固体無機イオン伝導物質(D)製であり、前記固体無機イオン伝導物質が結晶であり、互いに平行な複数の面で形成された層状結晶構造を有し、前記固体無機イオン伝導物質のイオンが前記固体無機イオン伝導物質のイオン伝導性を生じさせるように面間を移動することを特徴とするデバイス。 - 前記複数の面が前記第一端部と前記第二端部との間の所定の方向に平行である、請求項1に記載のデバイス。
- 前記固体無機イオン伝導物質がA2B2O5型のものである、請求項1又は2に記載のデバイス。
- 前記Aが水素を含む、請求項3に記載のデバイス。
- 前記Aがアルカリ金属を含む、請求項3又は4に記載のデバイス。
- 前記アルカリ金属がルビジウムとカリウムとのうち少なくとも一方を含む、請求項5に記載のデバイス。
- 前記Bがチタンを含む、請求項3から6のいずれか一項に記載のデバイス。
- 前記Bがチタンとニオブとの混合物を含む、請求項7に記載のデバイス。
- 前記複数の面が酸素サイトに空孔を有する、請求項3から8のいずれか一項に記載のデバイス。
- 少なくとも湿気に対して少なくとも前記固体無機イオン伝導物質を封止する封止セルを更に備える請求項1から9のいずれか一項に記載のデバイス。
- 前記固体無機イオン伝導物質と接触している少なくとも一つの機械的アクチュエータと、
制御信号を印加することによって前記機械的アクチュエータを制御して、前記電解質の中に電荷を固定する状態に対応して前記固体無機イオン伝導物質に印加される第一力を生じさせ、前記電解質から電荷を放出する状態に対応して前記固体無機イオン伝導物質に印加される第二力を生じさせるための制御ユニットと、
を更に備え、前記第一力から前記第二力を引いた差が前記固体無機イオン伝導物質の原子面の応力に対応している、請求項1から10のいずれか一項に記載のデバイス。 - 前記機械的アクチュエータが前記固体無機イオン伝導物質に接触している圧電素子を備え、前記制御ユニットが電気信号を印加することによって前記圧電素子を制御するように構成されている、請求項11に記載のデバイス。
- 前記固体無機イオン伝導物質の温度を調整するための少なくとも一つの温度調整部と、
制御信号を印加することによって前記温度調整部を制御して、前記固体無機イオン伝導物質の温度を第一温度にして前記電解質の中に電荷を固定する状態に前記固体無機イオン伝導物質を維持するか、又は前記固体無機イオン伝導物質の温度を第二温度にして前記電解質から電荷を放出する状態に前記固体無機イオン伝導物質を維持するための制御ユニットと、
を更に備え、前記第一温度が前記第二温度よりも高い、請求項1から12のいずれか一項に記載のデバイス。 - 前記固体無機イオン伝導物質が、前記固体無機イオン伝導物質に事前に印加されていた電気信号の関数として可変な抵抗率を有し、
前記デバイスが、少なくとも二つの値から選択された信号値を前記電解質に少なくとも所定の持続期間にわたって印加する書き込みモードと、前記電解質の電気抵抗を測定して前記書き込みモードにおいて事前に印加されていた信号値を決定する読み出しモードとでデータを保存するためのメモリとして構成されている、請求項1から13のいずれか一項に記載のデバイス。 - 請求項1から14のいずれか一項に記載のデバイスを製造するための方法であって、
前記電解質の物質を活性化する活性化ステップを備えることを特徴とする方法。 - 前記活性化ステップが略400Kの温度で不活性雰囲気における熱アニーリングを備える、請求項15に記載の方法。
- 前記活性化ステップが前記固体無機イオン伝導物質を水に浸漬することを備える、請求項15又は16に記載の方法。
- 前記活性化ステップが、5kV/mよりも高い電圧の印加を備える、請求項15から17のいずれか一項に記載の方法。
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