EP1522082A2 - Verfahren zur herstellung von superkondensatoren - Google Patents
Verfahren zur herstellung von superkondensatorenInfo
- Publication number
- EP1522082A2 EP1522082A2 EP03729779A EP03729779A EP1522082A2 EP 1522082 A2 EP1522082 A2 EP 1522082A2 EP 03729779 A EP03729779 A EP 03729779A EP 03729779 A EP03729779 A EP 03729779A EP 1522082 A2 EP1522082 A2 EP 1522082A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- layers
- quantum
- capacitors
- range
- electrical energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 6
- 230000005611 electricity Effects 0.000 title abstract 2
- 239000003990 capacitor Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000011888 foil Substances 0.000 claims abstract description 6
- 230000000694 effects Effects 0.000 claims abstract description 3
- 230000000704 physical effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 230000032798 delamination Effects 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000003847 radiation curing Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 2
- 239000012141 concentrate Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000011159 matrix material Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000015654 memory Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
- H01G4/206—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 inorganic and synthetic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/54—Electrolytes
- H01G11/56—Solid electrolytes, e.g. gels; Additives therein
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/46—Metal oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/36—Accumulators not provided for in groups H01M10/05-H01M10/34
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49108—Electric battery cell making
Definitions
- the energy storage devices are independent of stationary sources and are therefore used to power electrical drives in mobile traffic (road, rail, ship and aerospace), primarily as an energy substitute for fossil fuels.
- the highly concentrated loss-free storage capacity of the materials also allows use in domestic technology for the temporary storage and transport of e.g. energies obtained through solar technology.
- the materials also enable the construction of new types of electronic components.
- the lossless, rapid discharge of the electrically stored energy also allows it to be used as an explosive device.
- the new storage facility allows electrical energy to be stored in the same weight-specific range as chemical energy. Values in the range from 1 to over 15 MJ / kg can be achieved.
- the materials of the new storage allow unlimited charging and discharging cycles; the materials do not wear out.
- the new storage works loss-free when loading and unloading.
- the memory is robust against shocks, extreme accelerations and extreme temperatures, as is the positioning of the room.
- the invention makes use of a physical effect which consists in the fact that very small amounts of dipolar crystals, for example Ti02 (high electronegativity) in an insulating medium / matrix, for example Si02 or polymer resins, due to a strong electrostatic field and at a critical voltage (charging conditions) become electrically conductive (semiconductors) through virtual photon resonance (a new kind of quantum physical effect) and thereby absorb energy, which is stored analogously to a plate capacitor by counteracting polarization.
- the memories can be designed with voltages from a few volts to a few thousand volts. The storage capacity is only limited by the design. 15.3.
- the storage crystals such as Ti02, SrTi03 or the like, are applied to a support surface in the size of a few nm either as a grain or as a layer together with the insulating medium.
- rutile There are special requirements for the expansion of the crystals, above all the "rutile" type is necessary.
- Two methods are used: a) A mixture of crystals and polymer resin is first dispersed and then by electrostatic spray technology onto a composite film consisting of a sandwich made of metal and polymer film, which is either flat or stretched on a tube-like body and is continuously moved, sprayed in. The metal film isolated in the composite forms the counterelectrode.
- the insulation of the polymer prevents the charges from flowing off after impact together with the counterelectrode an electric field, which exerts strong surface forces due to the capacitive effect. These surface forces produce geometrically precise shapes, in the case of the tube exactly round layers and exact layer thicknesses Ensure no-shift layers.
- the electrostatic field also causes the geometrical alignment of the dipoles.
- the resin is cured by radiation curing in a protective atmosphere or by thermal curing.
- the coated film is then cut open and shaped into a layer capacitor.
- the layers can either be laid flat on top of each other or rolled up. Alternately, the metallic parts of the foils are connected and thereby form the positive and negative poles of the memory.
- the storage bodies are covered with insulating materials and the electrodes are guided to external terminals.
- a film capacitor made planar with foils, if made extremely long and with few layers, can be used as a highly flexible flat conductor with an almost infinite bandwidth for the connection between source and battery.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH113002 | 2002-07-01 | ||
CH11302002 | 2002-07-01 | ||
PCT/CH2003/000423 WO2004004026A2 (de) | 2002-07-01 | 2003-06-26 | Verfahren zur herstellung von superkondensatoren |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1522082A2 true EP1522082A2 (de) | 2005-04-13 |
Family
ID=29783982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03729779A Withdrawn EP1522082A2 (de) | 2002-07-01 | 2003-06-26 | Verfahren zur herstellung von superkondensatoren |
Country Status (8)
Country | Link |
---|---|
US (2) | US20060164788A1 (de) |
EP (1) | EP1522082A2 (de) |
JP (2) | JP4986398B2 (de) |
CN (1) | CN1679123B (de) |
AU (1) | AU2003240363A1 (de) |
CA (1) | CA2491552A1 (de) |
RU (1) | RU2357313C2 (de) |
WO (1) | WO2004004026A2 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7729811B1 (en) | 2001-04-12 | 2010-06-01 | Eestor, Inc. | Systems and methods for utility grid power averaging, long term uninterruptible power supply, power line isolation from noise and transients and intelligent power transfer on demand |
US7914755B2 (en) | 2001-04-12 | 2011-03-29 | Eestor, Inc. | Method of preparing ceramic powders using chelate precursors |
US7595109B2 (en) * | 2001-04-12 | 2009-09-29 | Eestor, Inc. | Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries |
EP1738378A4 (de) | 2004-03-18 | 2010-05-05 | Nanosys Inc | Auf nanofaseroberflächen basierende kondensatoren |
US7466536B1 (en) * | 2004-08-13 | 2008-12-16 | Eestor, Inc. | Utilization of poly(ethylene terephthalate) plastic and composition-modified barium titanate powders in a matrix that allows polarization and the use of integrated-circuit technologies for the production of lightweight ultrahigh electrical energy storage units (EESU) |
US20110170232A1 (en) * | 2004-08-13 | 2011-07-14 | Eestor, Inc. | Electrical energy storage unit and methods for forming same |
US7648687B1 (en) | 2006-06-15 | 2010-01-19 | Eestor, Inc. | Method of purifying barium nitrate aqueous solution |
US7993611B2 (en) | 2006-08-02 | 2011-08-09 | Eestor, Inc. | Method of preparing ceramic powders using ammonium oxalate |
US8853116B2 (en) | 2006-08-02 | 2014-10-07 | Eestor, Inc. | Method of preparing ceramic powders |
US8145362B2 (en) | 2006-08-04 | 2012-03-27 | Eestor, Inc. | Utility grid power averaging and conditioning |
JP2011514126A (ja) * | 2007-10-31 | 2011-04-28 | アイゼンリンク、ロルフ | 電気エネルギの無損失伝送方法および装置 |
JP5323373B2 (ja) * | 2008-03-24 | 2013-10-23 | タマティーエルオー株式会社 | キャパシタ型蓄電池 |
WO2010023575A1 (en) * | 2008-08-26 | 2010-03-04 | Nxp B.V. | A capacitor and a method of manufacturing the same |
US8877367B2 (en) * | 2009-01-16 | 2014-11-04 | The Board Of Trustees Of The Leland Stanford Junior University | High energy storage capacitor by embedding tunneling nano-structures |
CN102282646A (zh) * | 2009-01-16 | 2011-12-14 | 利兰·斯坦福青年大学托管委员会 | 量子点超级电容器和电子电池 |
US20100285316A1 (en) * | 2009-02-27 | 2010-11-11 | Eestor, Inc. | Method of Preparing Ceramic Powders |
CN102439694A (zh) * | 2009-04-01 | 2012-05-02 | 利兰·斯坦福青年大学托管委员会 | 带有面积增加的电极的全电子电池 |
WO2012134424A2 (en) * | 2010-01-20 | 2012-10-04 | Eestor, Inc. | Purification of barium ion source |
US8611067B1 (en) * | 2010-03-08 | 2013-12-17 | Daniel A. Pearson | Energy storage device |
EP2548210B1 (de) * | 2010-03-17 | 2024-07-31 | The Secretary of State For Defence | Verbesserte dielektrika |
CN102074751B (zh) * | 2010-12-16 | 2013-05-01 | 合肥中兴电子科技有限责任公司 | 一种蓄电池维护方法 |
CN103858271B (zh) * | 2011-09-05 | 2016-08-17 | 日本麦可罗尼克斯股份有限公司 | 片状电池的评价装置以及评价方法 |
WO2013065093A1 (ja) * | 2011-10-30 | 2013-05-10 | 株式会社日本マイクロニクス | 繰り返し充放電できる量子電池 |
CN102623173B (zh) * | 2012-04-17 | 2014-05-28 | 电子科技大学 | 一种基于氧化铝有序纳米孔结构的电容器的制备方法 |
EP2858102B1 (de) * | 2012-05-31 | 2020-04-22 | Kabushiki Kaisha Nihon Micronics | Halbleitersonde zum testen von quantenzellen sowie testvorrichtung und testverfahren |
RU2530765C1 (ru) * | 2013-04-17 | 2014-10-10 | Общество с ограниченной ответственностью "МВТУ" (ООО "МВТУ") | Способ накопления, хранения электрической энергии и устройство для его осуществления |
JP6456384B2 (ja) * | 2013-08-12 | 2019-01-23 | ウオーターズ・テクノロジーズ・コーポレイシヨン | 超臨界流体クロマトグラフィーシステム用の移動相コントローラ |
KR101877151B1 (ko) * | 2014-03-18 | 2018-07-10 | 가부시키가이샤 니혼 마이크로닉스 | 전지 |
JP2017532787A (ja) * | 2014-10-13 | 2017-11-02 | ライプニッツ−インスティトゥート フュア フェストケルパー− ウント ヴェルクシュトフフォルシュング ドレスデン エー ファオLeibniz−Institut fuer Festkoerper− und Werkstoffforschung Dresden e.V. | コンパクトなマイクロキャパシタ又はナノキャパシタの製造方法、及びコンパクトなマイクロキャパシタ又はナノキャパシタ |
JP6813982B2 (ja) * | 2016-08-01 | 2021-01-13 | 株式会社日本マイクロニクス | 二次電池 |
JP6961370B2 (ja) * | 2017-03-15 | 2021-11-05 | 株式会社日本マイクロニクス | 蓄電デバイス |
CN110224454B (zh) * | 2018-03-02 | 2024-05-10 | 意法半导体有限公司 | 用于移动站的电池交换系统 |
KR20210092187A (ko) | 2018-08-31 | 2021-07-23 | 이노포스, 엘엘씨 | 피부 관리를 위한 식물성 추출물 |
CN112601462B (zh) | 2018-08-31 | 2023-10-31 | 伊诺弗斯公司 | 植物抗氧化剂 |
CN112638474A (zh) | 2018-08-31 | 2021-04-09 | 伊诺弗斯公司 | 代谢障碍的植物调节剂 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5800575A (en) * | 1992-04-06 | 1998-09-01 | Zycon Corporation | In situ method of forming a bypass capacitor element internally within a capacitive PCB |
JP3173143B2 (ja) * | 1992-07-09 | 2001-06-04 | 松下電器産業株式会社 | 積層フィルムコンデンサ用積層体およびその製造方法 |
US5711988A (en) * | 1992-09-18 | 1998-01-27 | Pinnacle Research Institute, Inc. | Energy storage device and its methods of manufacture |
JPH06236826A (ja) * | 1993-02-10 | 1994-08-23 | Hitachi Ltd | 薄膜状絶縁膜およびその形成方法並びにその形成装置 |
US5710436A (en) * | 1994-09-27 | 1998-01-20 | Kabushiki Kaisha Toshiba | Quantum effect device |
US5705259A (en) * | 1994-11-17 | 1998-01-06 | Globe-Union Inc. | Method of using a bipolar electrochemical storage device |
KR100250480B1 (ko) * | 1997-08-30 | 2000-04-01 | 김영환 | 반도체소자의 캐패시터 제조방법 |
IL142586A0 (en) * | 1998-10-13 | 2002-03-10 | Select Molecular Technologies | High capacitance energy storage |
US6399521B1 (en) * | 1999-05-21 | 2002-06-04 | Sharp Laboratories Of America, Inc. | Composite iridium barrier structure with oxidized refractory metal companion barrier and method for same |
KR100487069B1 (ko) * | 2000-04-12 | 2005-05-03 | 일진나노텍 주식회사 | 새로운 물질로 이루어진 전극을 이용하는 수퍼 커패시터 및 그 제조 방법 |
US6544651B2 (en) * | 2000-05-18 | 2003-04-08 | Georgia Tech Research Corp. | High dielectric constant nano-structure polymer-ceramic composite |
US7031136B2 (en) * | 2002-04-09 | 2006-04-18 | Ngimat Co. | Variable capacitors, composite materials |
US20090195961A1 (en) * | 2002-07-01 | 2009-08-06 | Rolf Eisenring | Method and device for storing electricity in quantum batteries |
WO2004079793A2 (en) * | 2003-03-05 | 2004-09-16 | Duff William B Jr | Electrical charge storage device having enhanced power characteristics |
JP4392336B2 (ja) * | 2004-03-25 | 2009-12-24 | パナソニック株式会社 | 強誘電体容量素子の製造方法 |
-
2003
- 2003-06-26 AU AU2003240363A patent/AU2003240363A1/en not_active Abandoned
- 2003-06-26 JP JP2004516408A patent/JP4986398B2/ja not_active Expired - Fee Related
- 2003-06-26 CN CN038203197A patent/CN1679123B/zh not_active Expired - Fee Related
- 2003-06-26 EP EP03729779A patent/EP1522082A2/de not_active Withdrawn
- 2003-06-26 CA CA002491552A patent/CA2491552A1/en not_active Abandoned
- 2003-06-26 WO PCT/CH2003/000423 patent/WO2004004026A2/de active Application Filing
- 2003-06-26 RU RU2005102398/09A patent/RU2357313C2/ru not_active IP Right Cessation
- 2003-06-26 US US10/519,491 patent/US20060164788A1/en not_active Abandoned
-
2007
- 2007-08-22 US US11/892,353 patent/US7895721B2/en not_active Expired - Fee Related
-
2010
- 2010-01-27 JP JP2010015505A patent/JP2010093306A/ja active Pending
Non-Patent Citations (1)
Title |
---|
See references of WO2004004026A2 * |
Also Published As
Publication number | Publication date |
---|---|
CN1679123A (zh) | 2005-10-05 |
AU2003240363A1 (en) | 2004-01-19 |
US20060164788A1 (en) | 2006-07-27 |
WO2004004026A2 (de) | 2004-01-08 |
WO2004004026A3 (de) | 2004-03-25 |
JP4986398B2 (ja) | 2012-07-25 |
CA2491552A1 (en) | 2004-01-08 |
JP2010093306A (ja) | 2010-04-22 |
US7895721B2 (en) | 2011-03-01 |
JP2005531922A (ja) | 2005-10-20 |
RU2357313C2 (ru) | 2009-05-27 |
US20080016681A1 (en) | 2008-01-24 |
AU2003240363A8 (en) | 2004-01-19 |
RU2005102398A (ru) | 2005-08-20 |
CN1679123B (zh) | 2010-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1522082A2 (de) | Verfahren zur herstellung von superkondensatoren | |
US9767960B2 (en) | Use of organic and organometallic high dielectric constant material for improved energy storage devices and associated methods | |
EP2596508B1 (de) | Verwendung organischer und metallorganischer materialien mit hoher dielektrizitätskonstante zur verbesserung von energiespeichervorrichtungen und entsprechende verfahren | |
EP2791989B1 (de) | Gehäuse für eine batteriezelle mit einer lackbeschichtung zur elektrischen isolation, batteriezelle, batterie sowie kraftfahrzeug | |
US7990679B2 (en) | Nanoparticle ultracapacitor | |
CN105283926B (zh) | 利用有机和有机金属高介电常数材料改进能量存储设备中的电极和电流及其改进方法 | |
BR112017010257B1 (pt) | Compósito de rede à base de carbono corrugado interligado poroso (iccn), e, método para produzir o compósito | |
WO2017139451A1 (en) | para-FURUTA POLYMER AND CAPACITOR | |
US20090195961A1 (en) | Method and device for storing electricity in quantum batteries | |
US2933547A (en) | Solid state electric cell | |
CN107112759B (zh) | 熵能转移方法以及电路 | |
DE102011007988A1 (de) | Speicher zur reversiblen Speicherung elektrischer Energie mit sehr hoher Energiedichte und Zyklenzahl ohne Massetransport durch Ladungsspeicherung im Elektrodenvolumen | |
DE112018001797T5 (de) | Festkörper-sekundärbatterie | |
US20210159005A1 (en) | Pulsed E-field Propulsion System | |
DE102012205931A1 (de) | Elektrochemischer Energiespeicher und Verfahren zum Herstellen desselben | |
DE102017207439A1 (de) | Elektroden mit verbesserter Beschichtung und Verfahren zu ihrer Herstellung | |
CN101989493A (zh) | 一种有电量锁存功能的陶瓷电容器暨物理电池 | |
DE102010022831A1 (de) | Doppelschichtkondensator | |
Das-Gupta et al. | Piezoelectricity in uniaxially stretched and corona poled polyvinylidene fluoride | |
DE102018205299A1 (de) | Verfahren zur Herstellung eines Schichtaufbaus für einen Lithium-Ionen-Festkörperakkumulator | |
US20110170232A1 (en) | Electrical energy storage unit and methods for forming same | |
US20140272577A1 (en) | Methods and apparatus for high capacity anodes for lithium batteries | |
DE102012000084A1 (de) | Elektrische Energiespeicher in der Form sich durchdringender und elektrisch leitfähiger Halbleiternetzwerke | |
DE202017102702U1 (de) | Sekundärbatterie | |
DE102019001353A1 (de) | Feststoffbatterie aus hochdosierten Halbleitern für die kontrollierte parallele Ladung und die gesteuerte serielle Entladung von segmentierten Akkumulatoren |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20050119 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: EISENRING, ROLF |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: EISENRING, ROLF |
|
DAX | Request for extension of the european patent (deleted) | ||
17Q | First examination report despatched |
Effective date: 20090924 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20130103 |