EP1515343A3 - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

Info

Publication number
EP1515343A3
EP1515343A3 EP04019458A EP04019458A EP1515343A3 EP 1515343 A3 EP1515343 A3 EP 1515343A3 EP 04019458 A EP04019458 A EP 04019458A EP 04019458 A EP04019458 A EP 04019458A EP 1515343 A3 EP1515343 A3 EP 1515343A3
Authority
EP
European Patent Office
Prior art keywords
banks
sense
memory device
current copier
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04019458A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1515343A2 (en
Inventor
Seung-Won Lee
Seung-Keun Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of EP1515343A2 publication Critical patent/EP1515343A2/en
Publication of EP1515343A3 publication Critical patent/EP1515343A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
EP04019458A 2003-08-19 2004-08-17 Semiconductor memory device Withdrawn EP1515343A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2003057247 2003-08-19
KR10-2003-0057247A KR100517561B1 (ko) 2003-08-19 2003-08-19 불 휘발성 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
EP1515343A2 EP1515343A2 (en) 2005-03-16
EP1515343A3 true EP1515343A3 (en) 2006-01-18

Family

ID=36567227

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04019458A Withdrawn EP1515343A3 (en) 2003-08-19 2004-08-17 Semiconductor memory device

Country Status (5)

Country Link
US (2) US7016232B2 (zh)
EP (1) EP1515343A3 (zh)
JP (1) JP2005063644A (zh)
KR (1) KR100517561B1 (zh)
CN (1) CN100541666C (zh)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040147169A1 (en) 2003-01-28 2004-07-29 Allison Jeffrey W. Power connector with safety feature
KR100517561B1 (ko) * 2003-08-19 2005-09-28 삼성전자주식회사 불 휘발성 반도체 메모리 장치
EP1702389B1 (en) 2003-12-31 2020-12-09 Amphenol FCI Asia Pte. Ltd. Electrical power contacts and connectors comprising same
US7458839B2 (en) 2006-02-21 2008-12-02 Fci Americas Technology, Inc. Electrical connectors having power contacts with alignment and/or restraining features
WO2005096315A2 (en) * 2004-04-01 2005-10-13 Koninklijke Philips Electronics N.V. Thermally stable reference voltage generator for mram
US7352618B2 (en) * 2004-12-15 2008-04-01 Samsung Electronics Co., Ltd. Multi-level cell memory device and associated read method
US7384289B2 (en) 2005-01-31 2008-06-10 Fci Americas Technology, Inc. Surface-mount connector
US7595626B1 (en) * 2005-05-05 2009-09-29 Sequoia Communications System for matched and isolated references
DE602005010403D1 (de) * 2005-05-25 2008-11-27 St Microelectronics Srl Entladeschaltung für einen wortweise löschbaren Flash-Speicher
ITMI20062210A1 (it) * 2006-11-17 2008-05-18 St Microelectronics Srl Architettura di un generatore di tensione di lettura per una matrice di celle di memoria non volatili di tipo eeprom di un dispostivio a semiconduttore e relativo processo di fabbricazione
US7905731B2 (en) 2007-05-21 2011-03-15 Fci Americas Technology, Inc. Electrical connector with stress-distribution features
US8062051B2 (en) 2008-07-29 2011-11-22 Fci Americas Technology Llc Electrical communication system having latching and strain relief features
USD619099S1 (en) 2009-01-30 2010-07-06 Fci Americas Technology, Inc. Electrical connector
US8366485B2 (en) 2009-03-19 2013-02-05 Fci Americas Technology Llc Electrical connector having ribbed ground plate
USD618181S1 (en) 2009-04-03 2010-06-22 Fci Americas Technology, Inc. Asymmetrical electrical connector
USD618180S1 (en) 2009-04-03 2010-06-22 Fci Americas Technology, Inc. Asymmetrical electrical connector
JP5359798B2 (ja) * 2009-11-10 2013-12-04 ソニー株式会社 メモリデバイスおよびその読み出し方法
US8878511B2 (en) * 2010-02-04 2014-11-04 Semiconductor Components Industries, Llc Current-mode programmable reference circuits and methods therefor
EP2624034A1 (en) 2012-01-31 2013-08-07 Fci Dismountable optical coupling device
USD727268S1 (en) 2012-04-13 2015-04-21 Fci Americas Technology Llc Vertical electrical connector
USD718253S1 (en) 2012-04-13 2014-11-25 Fci Americas Technology Llc Electrical cable connector
USD727852S1 (en) 2012-04-13 2015-04-28 Fci Americas Technology Llc Ground shield for a right angle electrical connector
US8944831B2 (en) 2012-04-13 2015-02-03 Fci Americas Technology Llc Electrical connector having ribbed ground plate with engagement members
US9257778B2 (en) 2012-04-13 2016-02-09 Fci Americas Technology High speed electrical connector
US9543703B2 (en) 2012-07-11 2017-01-10 Fci Americas Technology Llc Electrical connector with reduced stack height
USD751507S1 (en) 2012-07-11 2016-03-15 Fci Americas Technology Llc Electrical connector
CN103065668A (zh) * 2012-12-24 2013-04-24 上海宏力半导体制造有限公司 存储器及其读取方法
USD745852S1 (en) 2013-01-25 2015-12-22 Fci Americas Technology Llc Electrical connector
USD720698S1 (en) 2013-03-15 2015-01-06 Fci Americas Technology Llc Electrical cable connector
US9460785B2 (en) * 2014-03-06 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor storage device
EP2990796A1 (en) 2014-08-29 2016-03-02 The Procter and Gamble Company Device for testing the properties of hair fibres
KR102508532B1 (ko) * 2016-05-02 2023-03-09 삼성전자주식회사 감지 증폭기 및 이를 포함하는 메모리 장치
CN112805656B (zh) * 2018-11-15 2022-11-22 北京比特大陆科技有限公司 电流分配电路及存储设备
WO2021164032A1 (zh) * 2020-02-21 2021-08-26 华为技术有限公司 读/写数据的方法、存储器、存储装置和终端
CN113555042B (zh) * 2021-08-03 2023-12-19 北京紫光青藤微系统有限公司 灵敏放大器电路、存储器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889702A (en) * 1997-03-11 1999-03-30 Sgs-Thomson Microelectronics, S.A. Read circuit for memory adapted to the measurement of leakage currents
US6108259A (en) * 1998-06-12 2000-08-22 Samsung Electronics, Co., Ltd. Nonvolatile semiconductor memory device
US20020024864A1 (en) * 1999-09-17 2002-02-28 Naoaki Sudo Sense amplifier circuit and semiconductor storage device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2586722B2 (ja) * 1990-10-11 1997-03-05 日本電気株式会社 半導体記憶装置
KR0157342B1 (ko) * 1995-06-09 1998-12-01 김광호 불휘발성 반도체 메모리의 전압 센싱 방법
JPH1050079A (ja) 1996-08-07 1998-02-20 Nec Corp 多値不揮発性半導体メモリ
JP3039458B2 (ja) * 1997-07-07 2000-05-08 日本電気株式会社 不揮発性半導体メモリ
KR100295135B1 (ko) * 1997-12-31 2001-07-12 윤종용 멀티-비트 셀 구조를 갖는 비휘발성 메모리 장치
JP3116921B2 (ja) * 1998-09-22 2000-12-11 日本電気株式会社 半導体記憶装置
JP2000268593A (ja) 1999-03-18 2000-09-29 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ
KR100349850B1 (ko) 1999-10-08 2002-08-22 현대자동차주식회사 무인 벨지안 내구 시스템
IT1318892B1 (it) * 2000-09-15 2003-09-19 St Microelectronics Srl Circuito di lettura per memorie non volatili a semiconduttore.
KR20030001608A (ko) 2001-06-25 2003-01-08 주식회사 하이닉스반도체 플래쉬 메모리 셀의 센싱 회로
KR100517561B1 (ko) * 2003-08-19 2005-09-28 삼성전자주식회사 불 휘발성 반도체 메모리 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889702A (en) * 1997-03-11 1999-03-30 Sgs-Thomson Microelectronics, S.A. Read circuit for memory adapted to the measurement of leakage currents
US6108259A (en) * 1998-06-12 2000-08-22 Samsung Electronics, Co., Ltd. Nonvolatile semiconductor memory device
US20020024864A1 (en) * 1999-09-17 2002-02-28 Naoaki Sudo Sense amplifier circuit and semiconductor storage device

Also Published As

Publication number Publication date
US20050078523A1 (en) 2005-04-14
JP2005063644A (ja) 2005-03-10
CN1591689A (zh) 2005-03-09
EP1515343A2 (en) 2005-03-16
KR20050019455A (ko) 2005-03-03
CN100541666C (zh) 2009-09-16
US7016232B2 (en) 2006-03-21
US7142457B2 (en) 2006-11-28
US20060114738A1 (en) 2006-06-01
KR100517561B1 (ko) 2005-09-28

Similar Documents

Publication Publication Date Title
EP1515343A3 (en) Semiconductor memory device
EP1152427A3 (en) Semiconductor memory device
EP1475805A3 (en) Semiconductor memory device
TW323366B (en) Semiconductor memory device(1)
EP1288964A3 (en) Non-volatile semiconductor memory
EP1653516A3 (en) Magneto-resistive RAM
EP1993099A3 (en) Memory device, memory controller and memory system
TW330265B (en) Semiconductor apparatus
JP2003132682A5 (zh)
EP1376599A3 (en) Magnetic memory device having XP Cell and STR Cell in one Chip
EP0725402A3 (en) Semiconductor memory device
TW200741716A (en) Nonvolatile memory cell comprising switchable resistor and transistor
JP2005267837A5 (zh)
EP0907184A3 (en) Apparatus and method for implementing a bank interlock scheme and related test mode for multi-bank memory devices
EP1315176A3 (en) Memory circuit having parity cell array
EP0732700A3 (de) Halbleiterspeicheranordnung
GB2457408A (en) Sensing device for floating body cell memory and method thereof
EP1267354A3 (en) Semiconductor memory device, method for controlling same, and electronic information apparatus
EP1387362A3 (en) Reading circuit, reference circuit, and semiconductor memory device
WO2008021362A1 (en) Memory device with non-orthogonal word and bit lines and manufacturing method thereof
JP2003151280A5 (zh)
KR970060236A (ko) 반도체 기억장치
EP1282132A3 (en) Data storage device
TW201209840A (en) Semiconductor memory device
JP2006500725A5 (zh)

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL HR LT LV MK

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

RIC1 Information provided on ipc code assigned before grant

Ipc: G11C 7/06 19680901ALI20051119BHEP

Ipc: G11C 16/28 20000101AFI20050126BHEP

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL HR LT LV MK

17P Request for examination filed

Effective date: 20060504

AKX Designation fees paid

Designated state(s): DE FR GB

17Q First examination report despatched

Effective date: 20061026

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20090218