EP1509975A1 - Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication - Google Patents

Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication

Info

Publication number
EP1509975A1
EP1509975A1 EP03731472A EP03731472A EP1509975A1 EP 1509975 A1 EP1509975 A1 EP 1509975A1 EP 03731472 A EP03731472 A EP 03731472A EP 03731472 A EP03731472 A EP 03731472A EP 1509975 A1 EP1509975 A1 EP 1509975A1
Authority
EP
European Patent Office
Prior art keywords
grating
section
phase
laser
shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03731472A
Other languages
German (de)
English (en)
Other versions
EP1509975A4 (fr
Inventor
Wen-Yen Hwang
Klaus Alexander Anselm
Jun Zheng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Optoelectronics Inc
Original Assignee
Applied Optoelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/159,361 external-priority patent/US6638773B1/en
Priority claimed from US10/159,347 external-priority patent/US6608855B1/en
Application filed by Applied Optoelectronics Inc filed Critical Applied Optoelectronics Inc
Publication of EP1509975A1 publication Critical patent/EP1509975A1/fr
Publication of EP1509975A4 publication Critical patent/EP1509975A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention se rapporte à un laser à émission par la tranche (100) destiné à générer une lumière laser à mode longitudinal quasi-unique. Une zone active à semi-conducteur (120) amplifie, par émission stimulée, la lumière présente dans la cavité du laser à une longueur d'onde d'émission de laser. Des première et seconde sections de réseau, (141, 143) adjacentes à la zone active (120), présentent respectivement des première et seconde réflectivités et un premier indice de réfraction effectif. Les première et seconde sections de réseau (141, 143) possèdent une longueur d'onde de Bragg sensiblement égale à la longueur d'onde d'émission du laser. Une section de déphasage exempte de réseau (142), qui est placée de manière adjacente à la zone active (120) et entre les première et seconde zones de réseaux (141, 143), possède un second indice de réfraction, différent du premier indice de réfraction, et une longueur suffisante pour imprimer à la lumière se trouvant à la longueur d'onde d'émission du laser un déphasage suffisant pour que l'on obtienne un fonctionnement en mode longitudinal.
EP03731472A 2002-05-31 2003-05-29 Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication Withdrawn EP1509975A4 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US159347 1993-11-30
US10/159,361 US6638773B1 (en) 2002-05-31 2002-05-31 Method for fabricating single-mode DBR laser with improved yield
US10/159,347 US6608855B1 (en) 2002-05-31 2002-05-31 Single-mode DBR laser with improved phase-shift section
US159361 2002-05-31
PCT/US2003/017166 WO2003103107A1 (fr) 2002-05-31 2003-05-29 Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication

Publications (2)

Publication Number Publication Date
EP1509975A1 true EP1509975A1 (fr) 2005-03-02
EP1509975A4 EP1509975A4 (fr) 2005-06-15

Family

ID=29714712

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03731472A Withdrawn EP1509975A4 (fr) 2002-05-31 2003-05-29 Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication

Country Status (3)

Country Link
EP (1) EP1509975A4 (fr)
AU (1) AU2003240967A1 (fr)
WO (1) WO2003103107A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7072516B2 (ja) * 2016-10-12 2022-05-20 古河電気工業株式会社 半導体レーザ素子
CN112993751B (zh) * 2021-01-28 2022-08-19 湖北光安伦芯片有限公司 一种纳米柱vcsel光源结构及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796273A (en) * 1985-03-20 1989-01-03 Nec Corporation Distributed feedback semiconductor laser
US4847857A (en) * 1987-07-08 1989-07-11 Mitsubishi Denki Kabushiki Kaisha Single wavelength semiconductor laser
EP0559192A2 (fr) * 1992-03-06 1993-09-08 Nippon Telegraph And Telephone Corporation Réflecteur distribué et laser à semi-conducteur à longeur d'onde accordable
US6088377A (en) * 1997-01-27 2000-07-11 Fujitsu Limited Optical semiconductor device having a diffraction grating and fabrication process thereof
US20020181516A1 (en) * 2001-06-04 2002-12-05 Kamath Kishore K. Active phase tuning of DBR lasers
US20030147441A1 (en) * 2002-02-05 2003-08-07 Akulova Yuliya Anatolyevna Laser with a resonant optical reflector

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3714430B2 (ja) * 1996-04-15 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796273A (en) * 1985-03-20 1989-01-03 Nec Corporation Distributed feedback semiconductor laser
US4847857A (en) * 1987-07-08 1989-07-11 Mitsubishi Denki Kabushiki Kaisha Single wavelength semiconductor laser
EP0559192A2 (fr) * 1992-03-06 1993-09-08 Nippon Telegraph And Telephone Corporation Réflecteur distribué et laser à semi-conducteur à longeur d'onde accordable
US6088377A (en) * 1997-01-27 2000-07-11 Fujitsu Limited Optical semiconductor device having a diffraction grating and fabrication process thereof
US20020181516A1 (en) * 2001-06-04 2002-12-05 Kamath Kishore K. Active phase tuning of DBR lasers
US20030147441A1 (en) * 2002-02-05 2003-08-07 Akulova Yuliya Anatolyevna Laser with a resonant optical reflector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO03103107A1 *

Also Published As

Publication number Publication date
WO2003103107A1 (fr) 2003-12-11
AU2003240967A1 (en) 2003-12-19
EP1509975A4 (fr) 2005-06-15

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